JP3437104B2 - Substrate heat treatment apparatus and substrate heat treatment method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heat treatment apparatus and method for heat-treating a substrate to be treated, and more particularly to a substrate heat treatment apparatus for heating an LCD substrate coated with a resist solution and performing a baking treatment. It is about the method.

[0002]

2. Description of the Related Art In a manufacturing process of a liquid crystal display (LCD) device, a thin film of ITO, an electrode pattern, or the like is formed on an LCD substrate. To this end, photolithography techniques similar to those used in semiconductor manufacturing processes are used.

That is, the LCD substrate which is the object to be processed is
First, after being cleaned by the cleaning device, the treatment surface is subjected to hydrophobic treatment in the adhesion processing device. Then, after the photoresist solution is formed in the resist coating device, it is heated (baking process) in the heat treatment device.
By doing so, a sublimate such as a solvent is evaporated from the resist liquid film. Then, the LCD substrate is transferred to the exposure device,
The resist liquid film is exposed in a predetermined pattern. Finally,
After the developing solution is applied and developed in the developing device,
The developing solution is washed away with a rinse solution or the like, and a series of processing is completed.

In the above process, the baking process is performed by a substrate heat treatment apparatus having a heating table called a hot plate in which a heater is embedded. The hot plate of this heat treatment apparatus is provided with transfer pins that can project and retract the substrate to be processed on the heating table so that the substrate can be heated.

[0005]

By the way, in recent years, for example, so-called super TF for increasing the field of view by increasing the aperture ratio.
With the introduction of T liquid crystal displays and the like, the patterns formed on LCD substrates have become finer and more precise. Along with this, the problem of so-called “transfer” has been highlighted.

[0006] The transfer means that the resist coating film is varied in quantity and quality due to some cause during the photophysography process, mainly during the heat treatment. The cause of this transfer is not yet clear, but at least when the substrate after the resist solution is applied to the heat treatment apparatus having the above-mentioned configuration, due to the temperature difference between the transfer pin and the substrate,
It is known that the film thickness of the resist solution applied on the front side of the portion held by the transfer pins is affected, which contributes to the transfer.

As the pattern to be formed becomes finer and finer, a highly sensitive resist solution is used, and a transfer problem occurs even in a temperature environment which has not been a problem in the past.

In the case of an LCD, in the finished product, the film thickness variation portion remains as a so-called "transfer trace" and is visually observed through the glass substrate. Therefore, a means for effectively preventing the transfer is required. . Further, in the case of a large area LCD, it is necessary to deal with the problem of warpage caused by the temperature difference.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate heat treatment apparatus and method capable of effectively preventing the occurrence of warpage and transfer.

Still another object of the present invention is to provide a substrate heat treatment apparatus capable of effectively preventing the occurrence of warpage and transfer without lowering the throughput.

[0011]

In order to solve the above problems, the present invention provides a heating table for heating a substrate to be processed, a first transfer device for transferring the substrate to be processed to the heating table, and A second transfer means for holding another substrate to be processed above the heating table to perform preheat treatment and transferring the preheated target substrate to the first transfer means.

This substrate heat treatment apparatus is preferably used in an LCD manufacturing apparatus to perform a baking process after applying a resist solution to an LCD substrate.

According to this structure, the substrate to be processed immediately after being introduced into this apparatus is supported and preheated by the second transfer means having a relatively low temperature, so that the substrate to be processed is abruptly changed due to a rapid temperature change. There is no warp. Further, it is possible to effectively prevent the problem of so-called "transfer trace" of the resist liquid film caused by the temperature difference between the substrate and the transfer means.

Particularly in the case of an LCD manufacturing apparatus, since the resist solution coating step is performed in a closed space, the solvent and the like in the resist solution are hardly sublimated before the heat treatment step is introduced. Therefore, when the substrate to be processed is suddenly transferred to the first transfer means having a large temperature difference, only the sublimation of the sublimate in the supported portion is promoted by the temperature change and the resist film thickness fluctuates, which is transferred. There is a high risk of causing marks.

According to the present invention, since such a situation can be effectively prevented, a very high effect can be obtained especially in the LCD manufacturing apparatus.

The first transfer means is a first transfer pin that is driven to project from the heating table and supports the lower surface of the substrate to be processed, and the first transfer pin is moved up and down. It is preferable that the second transfer means has a first lifting mechanism, and the second transfer means includes a second transfer pin for supporting the another substrate to be processed and the second substrate to be processed. It is preferable to have an escape drive mechanism for releasing the second transfer pin from the lower side of the substrate to be processed after the second transfer pin is transferred to the transfer means.

Further, in this case, it is desirable that the second transfer means further has a second elevating mechanism for vertically moving the second transfer pin. Further, as the escape drive mechanism, a rotation mechanism for rotating the second transfer pin may be adopted. Further, in order to form a preheating space, it is preferable to provide a cover for partitioning the substrate heat treatment space above the heating table.

Further, according to a second aspect of the present invention, during the step of transferring the substrate to be processed onto the heating table and during the heating process of the substrate to be processed on the heating table, the substrate above the substrate to be processed is heated. Introducing a new substrate to be processed into the pre-heat treatment,
A substrate heat treatment method comprising: a step of leaving a heat-treated substrate to be processed from a heating table; and a step of transferring the pre-heat-treated substrate to the heating table and performing the heat treatment. is there.

With this structure, it is possible to obtain substantially the same effects as the substrate heat treatment apparatus.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Next, an embodiment of a heat treatment apparatus according to the present invention will be described by way of example in which it is applied to an LCD substrate coating and developing treatment system 1 shown in FIG.

The coating / developing system 1 coats an LCD substrate with a resist solution and then transfers it to an exposure system (EXP) 2 shown in FIG. It is received again and the developing process is performed.

In order to perform such a series of processing, the coating and developing processing system 1 performs the substrate cleaning processing and the loader / unloader section (L / UL) 3 for loading and unloading the LCD substrate. The first
1 Process part 4 and application of resist liquid (coating)
And a second process unit 5 for performing the peripheral edge resist removing process, and a third process unit 6 for performing the developing process.
An interface unit (I / F) 7 for transferring a substrate to and from the exposure system 2 is provided.

The loader / unloader section 3 comprises a cassette mounting table 10 and a transfer section (C / S) 11. Two types of cassettes C1 and C2 are mounted on the cassette mounting table 10. An unprocessed LCD substrate is stored in the first cassette C1, and an unprocessed LCD is stored in the second cassette C2.
The board is stored.

The transport section 11 is also provided with a first sub-arm mechanism 13. The first sub-arm mechanism 13 has an arm 14 capable of holding a substrate, and the arm accommodated in the first cassette C1 is taken out by advancing and retracting the arm to move the substrate to the first process unit 4 side. It can be handed over. It should be noted that the substrate on which all the processing has been completed is first processed by the first sub-arm mechanism 13.
It is stored in the second cassette C2 from the process unit 4 side.

The first process section 4 has a first main arm mechanism 15 that receives a substrate from the first sub-arm mechanism 13. This main arm mechanism 15 is
It is provided with a base 17 that runs on a first central conveyance path 16 that extends along the direction, and an arm 18 that rotates on this base 17 and is driven back and forth.

To the side of the first main arm mechanism 15, two cleaning units (SCR) 19 each consisting of a brush scrubber and a heating / heating unit (HP / HP) equipped with a hot plate are provided along a central conveyance path 16. ) 20, a dry cleaning unit (UV) 21 including an ultraviolet cleaning device, and a cooling unit (COL) including a cooling plate
22 are provided respectively.

Here, "heating / heating unit (HP / H
The notation "P)" indicates that the heating units having hot plates are stacked and installed, for example, in two upper and lower stages (hereinafter the same). Further, in the figure, the numbers (“HP1”, “COL1”, etc.) added after HP representing the heating unit and COL representing the cooling unit indicate the type or order of the heating process or the cooling process.

The first main arm mechanism 15 inserts the substrate received from the loader / unloader unit 3 into each of the processing units 19 to 20, performs the necessary processing, then takes out the substrate and sequentially separates them. Processing unit 19-
20 or the second process unit 5.

On the other hand, the second process section 5 runs on the second central conveying path 23 extending along the Y direction.
The main arm mechanism 24 is provided. The second main arm mechanism 24 has a base 25 and an arm 26 that are configured similarly to the first main arm mechanism 15.

On the side of the second main arm mechanism 24, a resist coating / peripheral resist removing unit (CT / ER) 28 for coating the substrate with the resist and removing the unnecessary resist in the peripheral portion. An adhesion / cooling unit (AD / COL) 29 for performing a hydrophobic treatment on the substrate surface, and a heating / heating unit (HP
/ HP) 30, heating / cooling unit (HP / COL) 3
1 is arranged.

The second main arm mechanism 24 inserts the substrate received from the first process unit 4 into each of the processing units 28 to 31, performs the necessary processing, and then takes out the substrate and sequentially. It is adapted to be conveyed to another processing unit 28-31 or the third process unit 6 side.

The third process section 6 is provided with a third main arm mechanism 34 that travels on a third central conveyance path 33 extending along the Y direction. The third main arm mechanism 34 has a base 35 and an arm 36 that are configured similarly to the first and second main arm mechanisms 15.

On the side of the third main arm mechanism 34, three development processing units (DEV) 38 for developing the LCD substrate after the exposure processing and a titler 39 for performing the titling are provided. A heating / heating unit (HP / HP) 40 and a heating / cooling unit (HP / COL) 41 are provided.

The third main arm mechanism 34 transfers the substrate coated with the resist solution received from the second process section 5 to the exposure system 2 side (interface section 7), and at the same time, transfers the exposed substrate. Exposure system 2
Receive from the side. Then, the exposed substrate is inserted into each of the processing units 38 to 41 to perform necessary processing, and then the substrate is taken out and sequentially processed into another processing unit 38 to 41.
41 or to the second process unit 5 side.

As shown in this figure, cooling units (COL) 42, 43 are provided between the first, second and third process parts 4, 5, 6. These cooling units 42 and 43 are used to temporarily hold the substrate under processing.

The interface section 7 includes a buffer cassette (BC) and a second sub-arm mechanism 46.
And a transfer unit 49 having a transfer table (not shown) for transferring the substrate between the second sub-arm mechanism 46 and the exposure system 2.

The interface section 7 exposes the resist-coated substrate received from the second process section 5 through the third main arm mechanism 34 to the exposure system 2.
Side and transfer the exposed substrate to the exposure system 2
It has the function of receiving from and passing to the third process unit 6.

Next, a processing procedure in the coating and developing processing system configured as described above will be described with reference to the flowchart of FIG. It should be noted that the alphabetical symbols in the flow chart mean that they are performed by the units to which the same symbols in FIG. 1 are attached.

First, the unprocessed substrate stored in the first cassette C1 on the heating table 10 is transferred from the loader / unloader unit 3 to the transfer unit (C / S) 11 via the first process unit. 4 to the first main arm mechanism 15 (steps S1 and S2). Next, this substrate is cleaned with ultraviolet rays by a dry cleaning device (UV) 21 (step S3), and then the cooling unit 22 first
Is cooled (COL1) (step S4).

Next, if brush cleaning (SRC) is performed by the wet cleaning device 19, after heating and drying by the first heat treatment (HP1) by the heating unit 20 (step S6), the cooling unit 21 is used. Is cooled by the second cooling process (step S).
7). Then, this substrate is the first main arm mechanism 15
From the second main arm mechanism 24 of the second process unit 5
To be delivered to.

The substrate transferred to the second process section is
After the surface hydrophobic treatment (AD) is performed by the adhesion processing unit 29 (step S8), the third cooling treatment (COL3) is performed (step S9). Next, the substrate after the hydrophobic treatment is introduced into a resist liquid coating / peripheral resist removing device 28 to perform resist coating (CT) and unnecessary resist liquid removal (ER) around the substrate periphery.

The application of this resist solution is performed by an apparatus called a spin coater. In this spin coater, an LCD substrate is housed in a closed cup, and a resist solution is formed on the surface of the substrate by rotating the cup at a high speed while supplying the resist solution.

The method of applying the resist solution while rotating the substrate is also used when forming a circuit pattern on a semiconductor wafer. However, in LCD manufacturing, it is sometimes difficult to form a uniform resist film as compared with a wafer because the LCD substrate is large and rectangular.

In particular, since the four corners have a distance from the center, the peripheral speed of this part is considerably high, and there is a possibility that turbulence will occur around the substrate.
Further, in order to evenly diffuse the resist solution to the corners of the substrate, it is necessary to prevent the solvent contained in the resist solution from volatilizing as much as possible and make the diffusion rate constant. For this reason, in the LCD substrate manufacturing apparatus, not only the substrate is rotated, but the substrate is rotated at a high speed together with the cup that is substantially hermetically housed, so that the volatilization of the solvent and the generation of the turbulent airflow are prevented.

On the other hand, the peripheral edge resist is removed by using a tool called an edge remover to remove the resist film rising at the edge of the substrate.

The substrate thus treated is inserted into the heating units 30 and 31 and baked (HP).
2) is performed (step S11). As a result, the solvent contained in the resist solution applied to the substrate is volatilized. Next, this substrate is inserted into a cooling unit and cooled to approximately room temperature (COL4) (step S12).
Next, this substrate is used for the second main arm mechanism 24.
Is transferred to the interface unit 7 via the third main arm mechanism 34 and is transferred to the exposure system 2 (step S13). Then, the exposure process (EXP) is performed in the exposure system 2 (step S1).
4).

The substrate subjected to the exposure process is inserted into the titler 39 through the interface section 7 and the third main arm mechanism 34 and the titling process is performed (step S15).

After that, the substrate is introduced into the development processing device 38 and subjected to development processing (DEV) (step S1).
6). The developing processing unit 38 performs development by rotating the substrate while supplying the developing solution onto the substrate, rinses the developing solution with a rinse solution, and then shakes it off to dry it.

Finally, this substrate is heated by the heating / heating unit 40 or the heating / cooling unit 4 facing the substrate.
1 and is heated and dried by the third heat treatment (HP3) (step S17), and then the fifth cooling treatment (C).
It is cooled by OL5) (step S18).

The substrate on which all the above processing has been completed is transferred from the third main arm mechanism 34 through the second and first main arm mechanisms 24 and 15 to the transfer section 11 (C / C).
It is delivered to the first sub-arm mechanism 13 provided in S) (step S19). Then, it is accommodated in the second cassette C2 placed on the loader / unloader section 10 by the first sub-arm mechanism 13 (step S20).

Next, the structure of the heat treatment apparatus of the present invention used in the coating and developing treatment system will be described with reference to FIG.

This heat treatment apparatus is, for example, a heat treatment unit (HP2) 3 of the second process section 4 (FIG. 1).
LC coated with resist liquid used as 0 and 31
It is used for volatilizing and drying the solvent contained in the resist solution by heating (baking) the D substrate.

The heat treatment apparatus of the present invention has the following features.
As shown in FIG. 3, in a heat treatment unit having a single hot plate 60, two substrates, a preheated substrate 62 and a main heating substrate 63, are accommodated at one time, and the main heating is performed after the substrate 62 is sufficiently preheated. By doing so, it is intended to effectively prevent the generation of a transfer mark due to a rapid temperature change. In order to achieve such a function, it has the following configuration.

First, this heat treatment apparatus has a main body 65 provided with an opening 64 for loading and unloading the substrate by the second main arm mechanism 24. Inside the main body 65, the hot plate 60 for holding the substrate 63 on the upper surface and performing main heating is fixed on a frame 67 which is erected from the bottom surface of the main body 65. The hot plate 60 is formed of, for example, an aluminum alloy or the like, and a heater 68 is embedded inside the hot plate 60.

The heater 68 is temperature-controlled by a heater heating temperature control unit 69 shown in the drawing, and is adapted to heat the hot plate 60 to a temperature according to a predetermined preheating condition and main heating condition.

Further, in the main body 65, the first transfer pin mechanism 7 for driving the first transfer pin 71 for holding the substrate 63 to be fully heated and mounting it on the hot plate 60.
2 and a second transfer pin mechanism 74 having a second transfer pin 73 for holding the substrate 62 to be preheated and transferring it to the first transfer pin 71.

The first transfer pin mechanism 72 includes the first transfer pin 71 driven to project and retract through the upper and lower insertion holes 60 a formed in the hot plate 60, and the first transfer pin 71. It is composed of a first holder 75 holding the lower end and a first elevating mechanism 76 for vertically driving the first transfer pin 71 via the first holder 75.

The first transfer pins 71 are provided, for example, four in number, and the transfer pins 71 are provided on the upper end portion of the stainless steel pin body in order to prevent generation of particles due to contact with the substrate. For example PEEK (polyester
A cover made of ether / ketone is attached.

Further, the first holder 75 is held by a guide mechanism (not shown) so as to be movable up and down, and can be moved up and down with all the first transfer pins 71 held at the same height. ing.

Further, the first elevating mechanism 76 has a timing belt 78 for vertically driving the holder 75, and a stepping motor 79 for driving the timing belt 78. The first stepping motor 79 is connected to a central control unit 81 shown in the drawing via a first transfer pin driving unit 80.

By controlling the first stepping motor 79, the central controller 81 can drive the substrate 63 held by the first transfer pins 71 at an arbitrary speed. The substrate 63 driven downward by the first transfer pin mechanism 72 is placed on the hot plate 60 via the proximity spacers (not shown) scattered on the upper surface of the hot plate 60. It has become.

The proximity spacer (not shown) is for forming a gap of about 0.1 to 0.5 mm between the substrate 63 and the upper surface of the hot plate 60. The substrate 63 placed in this manner is adsorbed and held on the hot plate 60 through the suction holes indicated by 82 in the figure. Although not shown, a rectangular vacuum chuck groove communicating with the suction hole 82 is formed on the upper surface of the hot plate 60, and the suction hole 82 is connected to a vacuum pump (not shown).

On the other hand, the second transfer pin mechanism 74, like the first transfer pin mechanism 72, is connected to the central control unit 81 via the second transfer pin drive unit 84. The lifting unit 85 and the second holder 86 that is vertically driven by the second lifting unit 85. Then, the second transfer pin 73 for holding the substrate 62 to be preheated.
From the second holder 86 to the hot plate 60.
Is fixed to the upper end of a stay 87 that is erected around the outside of the. A base end of the stay 87 is rotatably held by the second holder 86, and an upper end 87a is bent in an L shape so as to cover the hot plate 60. The second transfer pin 73 is fixed on the tip of an upper end portion 87a of the stay 87 that is bent in an L shape.

On the other hand, the base end portion of this stay 87 is shown in FIG.
A link mechanism shown by 8 and a drive unit 89 for rotationally driving the stay 87 are connected via the link mechanism 88. The drive unit 89 is connected to a central control unit 81 via a second transfer pin escape drive unit 90, and the central control unit 81 rotates the stay 87, for example, by 90 degrees, thereby The second transfer pin 73 is allowed to escape from a position where it overlaps the hot plate 60 to a position where it does not overlap.

In this operation, as will be described later, after the preheated substrate 62 is transferred from the second transfer pin 73 to the first transfer pin 71, the second transfer pin 73 is transferred to the substrate. Used to escape to a position that does not interfere with.

The second transfer pin 73 has a structure in which the upper end of the main body made of stainless steel is covered with a PEEK protective material like the first transfer pin 71.

On the other hand, the hot plate 60 described above,
Outside the first transfer pin mechanism 72 and the second transfer pin mechanism 74, first and second shutter mechanisms 92 and 93 for closing the opening 64 of the main body 65 are provided.

The first shutter mechanism 92 constitutes a three-direction wall that does not face the main arm mechanism 24 (conveyance path) among four-direction walls that surround the hot plate 60.
Shutter 94 and a drive cylinder mechanism 95 for vertically driving the first shutter 94.

The second shutter mechanism 93 includes a second shutter 96 (cover) which constitutes the remaining one-way wall,
It is composed of a second drive cylinder mechanism 98 for vertically driving the second shutter 96. FIG. 3 shows a state in which only the second shutter 96 is opened and the entry of the main arm mechanism 24 is accepted while the first shutter 94 is closed.

The first and second shutter mechanisms 92,
The numeral 93 is connected to the central controller 81 via a shutter driver indicated by 99 in the figure, and is adapted to operate in conjunction with the operation of the transfer pin mechanisms 72, 74.

The shutter 9 is provided on the lower surface of the main body upper wall 65a facing the upper end surfaces of the shutters 94 and 96.
There is provided a stopper 100 for forming a predetermined gap between each of the upper wall 4 and the upper wall 96.

An exhaust hole 101 is formed in the center of the upper wall 65a for exhausting the airflow entering through the gap together with the solvent evaporated from the substrates 62 and 63. The main body upper wall 65a is formed in a mortar shape so as to gradually become higher toward the exhaust hole 101, and guides the incoming airflow so as not to directly hit the substrate 63.

Next, the operation of the heat treatment apparatus thus formed will be described. The most important factor in the operation of this heat treatment apparatus is the drive timing of the first and second transfer pins 71 and 73. As described above, in the LCD manufacturing apparatus, since the resist solution is applied in the closed cup, the solvent volatilizes very little from the resist solution. Due to the temperature difference between the pin and the substrate, only the solvent in the holding portion is abruptly evaporated, which may be a "transfer mark".

Therefore, in the heat treatment apparatus of the present invention, the resist solution coated substrate 62 received from the main arm mechanism 24 is first transferred to the second transfer pin 7 having a relatively low temperature.
Hold at 3 and preheat. And in this preheating step,
Sublimate most of the sublimate (solvent, etc.) from the resist liquid,
Moreover, after the temperature difference between the first transfer pin 71 and the first transfer pin 71 is substantially eliminated, the temperature difference is transferred to the first transfer pin 71 to perform main heating. Therefore, the preheating time, that is, the drive timing of the first and second transfer pins 71 and 73 is very important.

Further, in this embodiment, not only the main heating but also the preheating is performed by the heat radiation from the heating heater 68, so that the temperature control of the heating heater 68 is also important.
Further, the height of holding the substrate 62 also has a great influence on the preheating temperature and is important.

Since the preferable preheating condition and the main heating condition can be obtained by an experiment or the like, they are stored in the condition storage unit 110 shown in FIG.
Controls based on this condition. Especially the first,
The drive timing and speed of the second transfer pins 71 and 73 are
The first and second transfer pin drive timing determination units 111 determine the temperature based on the processing atmosphere, the heating temperature, and the like.

It is preferable that the temperature of the heat treatment space does not change during preheating. Therefore, it is desirable not to open and close the shutters 94 and 96 during preheating. Therefore, it is preferable to set the temperature and the preheating height of the heater 68 so that the preheating end time and the heating end time substantially coincide with each other.

Next, the heat treatment operation will be specifically described with reference to the flowchart shown in FIG. 4 and the process chart of FIG.

FIG. 5A shows the LCD substrate 6 to be fully heated.
3 shows the state of being mounted on the hot plate 60. Immediately after starting this apparatus, the dummy substrate D is first heated (step V1 in FIG. 4).

In this state, the LCD substrate 62 coated with the resist solution is inserted into the heat treatment apparatus by the main arm mechanism 24 and transferred onto the second transfer pin 73 (step V2).

Then, as shown in FIG. 5B, the first and second shutters 94 and 96 are closed to form a heat treatment space, and the second heat is released through the hot plate 60 of the heater 68. The preheating of the substrate 62 held on the transfer pin 73 is started (step V3).

When this preheating is completed, as shown in FIG. 5C, the first and second transfer pins 71 and 73 are raised to move the main heated substrate 63 to the main arm. It is positioned at the take-out height by the mechanism 24 (step V4).

Then, only the second shutter 96 is opened to introduce the main arm mechanism 24, and the first transfer pin
The main heated substrate 63 is taken out from above 71 . (Step V5) Next, the second shutter 96 is closed, and the preheated substrate 62 is transferred from the second transfer pin 73 to the first transfer pin 71 (step V6). For this purpose, first, in the state of FIG. 5C, only the second transfer pins 73 are lowered, and as shown in FIG.
Are transferred onto the first transfer pin 71.

Next, as shown in FIG. 5E, the second transfer pin 73 is released from the lower side of the substrate 62. This operation is performed by actuating the link mechanism (88) and rotating the stay 87 holding the second transfer pin 73 by 90 degrees.

Then, by lowering the first transfer pin 71 at a predetermined speed from the state indicated by the chain double-dashed line in FIG. 5 (e), the preheated substrate 62 is transferred onto the hot plate 60 and main heating is performed. (Step V8 in FIG. 4).

When the substrate is sequentially preheated and main-heated by the above steps V1 to V8, it is judged whether the substrate is the last processed substrate (step V9). If it is not the last substrate, steps V2 to V8 are repeated.

On the other hand, if it is the last substrate, steps V10 and V11 are performed. These steps V1
The operations 0 and V11 are the same as the operations V4 and V5, and the first transfer pin 71 is raised to raise the fully heated substrate 63.
Is positioned at the take-out height of the main arm mechanism 24, and this is taken out by the main arm mechanism 24.

According to the configuration described above, the following effects can be obtained.

First, according to the above configuration, the LCD substrate 62 immediately after being introduced into this apparatus is supported by the second transfer pin 73 whose temperature is lower than that of the first transfer pin 71. Therefore, it is possible to prevent a change in the resist film thickness due to a temperature change between the first transfer pin 71 and the LCD substrate 62, and thus prevent a transfer mark from being generated.

The substrate 62 is preheated until it is delivered to the first transfer pins 71, and the LCD substrate 6
Since the solvent or the like is sufficiently sublimated from the resist solution applied on the second resist layer 2, it is possible to prevent the resist film thickness from varying and the substrate from warping when the solvent is transferred to the first transfer pin 71. .

In particular, in the case of an LCD manufacturing apparatus, since the step of applying the resist solution is carried out in a closed cup, the LC in a state where the solvent or the like in the resist solution is hardly sublimated.
The D substrate is introduced into this heat treatment apparatus. Therefore, when this substrate to be processed is suddenly transferred to the first transfer pin 71 having a large temperature difference, only the sublimation of the sublimate in the portion supported by the transfer pin 71 is promoted by the temperature change, and the resist film thickness is increased. Fluctuates, which is likely to cause transfer marks.

According to the present invention, since such a situation can be effectively prevented, a very high effect can be obtained especially in the LCD manufacturing apparatus.

Secondly, according to the present invention, the above effect can be obtained in a small space without degrading the throughput.

That is, the two substrates 62 and 63 are simultaneously processed in parallel in the heat treatment space of one hot plate. Therefore, compared to the case where preheating and main heating are performed using two devices, there is no transfer of substrates between the devices, so there is little effect on the throughput of product manufacturing. In addition, since the installation area is smaller than the case where two devices are used, it contributes to downsizing and cost reduction of the device.

The present invention is not limited to the above-mentioned one embodiment, and various modifications can be made without departing from the scope of the invention.

For example, in the above example, the hot plate 6
The substrates 62 and 63 were transferred by fixing 0 and driving the transfer pins 71 and 73, respectively.
In addition to transferring 2, 63, various configurations can be adopted.
Further, the drive system is not limited to the belt drive, and various types can be appropriately adopted.

Further, among the structures of the second transfer pin mechanism 74, the mechanism for allowing the second transfer pin 73 to escape is not limited to that of the above-described one embodiment.
Various preferred mechanisms can be introduced as appropriate.

Further, in the above-mentioned one embodiment, as an example in which a particularly large effect can be obtained, the example in which the invention is applied to the coating and developing treatment system of the LCD manufacturing apparatus is shown. Of course, it can also be applied to an ashing device, an exposure device, and the like. It can also be applied to the case of processing a silicon wafer as a substrate to be processed.

[0099]

According to the structure of the present invention described above,
Since the substrate to be processed immediately after being introduced into this apparatus is supported and preheated by the second transfer means having a relatively low temperature, the substrate to be processed does not warp due to a rapid temperature change. Further, it is possible to effectively prevent the problem of so-called "transfer trace" of the resist liquid film caused by the temperature difference between the substrate and the transfer means.

Furthermore, since the preheating and main heating of the substrate are realized by the transfer operation in the apparatus having one hot plate, there is little influence on the throughput of the heat treatment process. Further, it is possible to reduce the installation area and cost as compared with the case where preheating and main heating are performed using two devices.

That is, according to the present invention, it is possible to provide a substrate heat treatment apparatus and method capable of solving the problems of warpage and transfer without lowering the throughput of the heat treatment step.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram for explaining an LCD substrate coating / developing processing system to which an embodiment of the present invention is applied.

FIG. 2 is likewise a flowchart for explaining a processing step.

FIG. 3 is also a schematic configuration diagram showing a substrate heat treatment apparatus.

FIG. 4 is a flow chart for explaining a substrate heat treatment method.

FIG. 5 is a flow chart for explaining a substrate heat treatment method.

[Explanation of symbols]

1 ... Coating and developing system 2 ... Exposure system 60 ... Hot plate (heating table) 62 ... LCD substrate (substrate to be preheated) 63 ... LCD substrate (substrate to be main-heated) 65 ... Main body 68 ... Heater (heating means) 71 ... First transfer pin 72 ... First transfer pin mechanism (first transfer means) 73 ... second transfer pin 74 ... Second transfer pin mechanism (second transfer means) 76 ... First lifting mechanism 81 ... Central control unit 85 ... Second lifting mechanism 88 ... Link mechanism 89 ... Drive unit 92 ... First shutter mechanism 93 ... Second shutter mechanism 94 ... First shutter (cover) 96 ... Second shutter (cover) 110 ... Preheating, main heating condition storage unit 111 ... Second transfer pin drive timing determination unit

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/38

Claims (7)

(57) [Claims] 1. A heating table for heating a substrate to be processed, a first transfer means for transferring the substrate to be processed to the heating table, and another substrate to be processed held above the heating table. A substrate heat treatment apparatus comprising: a second transfer unit that performs heat treatment and transfers the pre-heat-treated substrate to the first transfer unit. 2. The substrate heat treatment apparatus according to claim 1, wherein the first transfer means is a first transfer pin that is driven to project and retract from the heating table to support a lower surface of the substrate to be processed, and the first transfer pin.
A first elevating mechanism for vertically moving the transfer pin, and the second transfer means includes a second transfer pin that supports the other substrate to be processed, and the other process target. A substrate heat treatment apparatus comprising: an escape drive mechanism for releasing the second transfer pin from the lower side of the substrate to be processed after the substrate is transferred to the first transfer means. 3. The substrate heat treatment apparatus according to claim 2, wherein the second transfer unit further includes a second elevating mechanism for vertically moving the second transfer pin. Substrate heat treatment equipment. 4. The substrate heat treatment apparatus according to claim 2, wherein the escape drive mechanism has a rotation mechanism for rotating the second transfer pin. 5. The substrate heat treatment apparatus according to claim 1, further comprising a cover for partitioning a substrate heat treatment space above the heating table. 6. A step of transferring a substrate to be processed onto a heating table, and during the heating process of the substrate to be processed on the heating table, a new substrate to be processed is introduced above the substrate to be processed. , A step of performing a pre-heat treatment, a step of leaving the substrate to be heat-treated to be withdrawn from the heating table, and a step of transferring the substrate to be treated after the pre-heat treatment to the heating table to perform the heat treatment A method for heat treating a substrate, comprising: 7. The heat treatment method according to claim 6, wherein in the step of heat-treating the substrate to be processed on a heating table, the substrate to be processed is supported by a first mounting pin and the mounting pin is lowered. And preliminarily heat-treating the substrate to be processed includes a step of supporting the substrate to be processed with a second mounting pin. The substrate heat treatment method, wherein the step of placing the substrate on a heating table includes a step of delivering the substrate to be processed, which has undergone the preheat treatment, from the second transfer pins to the first transfer pins.