JP2000047398A - Heat treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treating device to prevent transfer of marks of supporting pins which is an index of irregularity of film thickness of a resist liquid and changes in the line width of a circuit pattern. SOLUTION: The heat treating device to heat a substrate G on which a resist liquid is applied prior to processes of exposure and development is equipped with a heating plate 72 to heat the substrate G coated with the resist liquid by radiation heating, lift pins to lift and lower the fed substrate G and to dispose the substrate at the heating position above the heating plate 72, and supporting pins 73 fixed on the heating plate 72 to support the substrate G at a minute distance from the heating plate 72. The supporting pins 73 are made of such a material having thermal conductivity that decreases the difference between the calory per unit area supplied through the supporting pins to the substrate G by thermal conduction and the calory per unit area supplied from the heating plate 72 to the substrate by radiation, or preferably, that renders the both calories almost equal.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for heating a substrate such as an LCD glass substrate coated with a resist solution prior to exposure and development.

[0002]

2. Description of the Related Art In the manufacture of a liquid crystal display (LCD), for example, a photoresist liquid is applied to a rectangular LCD substrate made of glass to form a resist film, and the resist film is exposed according to a circuit pattern. A circuit pattern is formed by a so-called photolithography technique of developing this.

In this photolithography process, a rectangular LCD substrate (hereinafter, referred to as a substrate) is
First, in order to enhance the fixability of the resist, an adhesion process is performed, and then a resist coating process is performed.
In the resist coating process, a resist liquid is supplied to the center of the surface of the substrate while rotating the substrate, and the resist liquid is diffused by centrifugal force to apply a resist film to the entire surface of the substrate. The substrate to which the resist solution has been applied is subjected to a pre-baking process by removing excess resist on the periphery of the substrate.

Next, the substrate is cooled, exposed to a predetermined circuit pattern, subjected to post-exposure bake processing and cooling processing as required, and then developed to form a predetermined circuit pattern. You. afterwards,
A post-baking process is performed, the cooling is performed, and a series of steps is completed.

In such a coating / developing process, a heat treatment such as a pre-bake treatment is performed by placing a substrate on a plurality of lift pins provided on a heating plate in a heat treatment unit, and then lowering the lift pins to heat the substrate. It is performed by being heated by a plate. In recent years, in order to eliminate adverse effects of particles and the like on the substrate, a so-called proximity method of avoiding direct contact between the heating plate and the substrate and heating by radiant heat from the heating plate has been frequently used.

[0006]

However, in the above-mentioned coating / developing process, the substrate coated with the resist solution is subjected to a prebaking process by a proximity method or such a prebaking process. After the substrate is exposed and developed, traces of the substrate support pins during the pre-bake process may be transferred to the substrate.

[0007] Such transfer is caused by the fact that a highly sensitive type resist solution has recently been used,
In addition, it is presumed that the line width of the circuit pattern formed on the LCD substrate is 3 μm, which is thinner than the conventional one. However, the cause is not understood in detail, and thus such transfer is prevented. The fact is that it has not been successful yet.

[0008] Specifically, the transfer of the support pins is caused by a change in the film thickness of the resist solution applied on the substrate in accordance with the shape of the support pins after the pre-bake treatment. After the processing, it occurs when the line width of the circuit pattern formed on the substrate changes so as to correspond to the shape of the support pin. Further, even when the presence of transfer is not recognized after prebaking, transfer may occur after development.

The transfer of the support pins corresponds to the unevenness of the thickness of the resist solution and the fluctuation of the line width of the circuit pattern. There is a demand for minimizing transfer from occurring on a substrate.

The present invention has been made in view of the above circumstances, and has a heat treatment apparatus capable of preventing transfer of a support pin, which is an index of unevenness in the thickness of a resist solution and fluctuation in the line width of a circuit pattern. The purpose is to provide.

[0011]

According to a first aspect of the present invention, there is provided a heat treatment apparatus for heating a substrate coated with a resist liquid prior to exposure and development. There is a heating plate for heating the substrate coated with the resist solution by radiant heat, lift pins for elevating the loaded substrate and disposing it at a heating position above the heating plate, and fixed on the heating plate. A support pin for supporting the substrate at a small distance from the heating plate, wherein the support pin is provided with heat per unit area supplied to the substrate by heat conduction through the support pin, and the heating plate A heat treatment apparatus characterized by having a thermal conductivity such that the difference from the amount of heat per unit area supplied to the substrate by radiation from the substrate becomes small.

After the exposure and development processing, if the material of the support pin 73 fixed to the heating plate 72 shown in FIG. 1 is a fluororesin (PCTFE or the like), its thermal conductivity is low. It is presumed that the line width of the circuit pattern 80 formed in FIG. That is, since the thermal conductivity of the fluororesin support pins 73 is low, as shown in FIG. 1A, the heat amount per unit area that is directly conducted from the heating plate 72 to the substrate G via the support pins 73. Q is considerably smaller than the amount of heat per unit area q supplied to the substrate G by radiation from the heating plate 72, and the temperature of the portion where the support pins 73 are in contact is lower than the temperature of the non-contact portion. The resist sensitivity is high, and therefore, FIG.
As shown in the figure, in the circuit pattern after exposure and development,
It is presumed that the line width of the portion corresponding to the support pin is reduced.

Further, as shown in FIG.
When the material of the second support pin 73 is stainless steel (SUS), the line width of the circuit pattern 80 formed on the substrate G is large corresponding to the shape of the fixing pin 73 because the thermal conductivity is high. It is presumed that it becomes. In other words, since the thermal conductivity of the stainless steel support pin 73 is high, FIG.
As shown in FIG.
3, the amount of heat Q per unit area directly transmitted to the substrate G via the heating plate 72 is considerably larger than the amount of heat q per unit area supplied to the substrate G by radiation from the heating plate 72, and the portion where the support pins 73 contact. Is higher than the temperature of the non-contact portion, the resist sensitivity of that portion is low. Therefore, as shown in FIG. 2B, the circuit pattern after exposure and development corresponds to the support pin. It is presumed that the line width of the portion becomes large.

Therefore, in the present invention, the difference between the amount of heat per unit area supplied to the substrate by heat conduction via the support pins and the amount of heat per unit area supplied to the substrate by radiation from the heating plate is small. The support pins are made of a material having such thermal conductivity. Accordingly, a large temperature difference does not occur between the contact portion and the non-contact portion of the support pin, and it is possible to prevent the line width of the circuit pattern from being uneven due to the transfer.

According to a second aspect of the present invention, there is provided a substrate heating apparatus for heating a substrate coated with a resist liquid prior to exposure processing and development processing, wherein the substrate coated with the resist liquid is heated by radiant heat. A heating plate for
A lift pin for supporting the substrate at a minute interval from the heating plate while raising and lowering the loaded substrate, and the lift pins are provided per unit area supplied to the substrate by heat conduction through the lift pins. Calories and
There is provided a heat treatment apparatus having a thermal conductivity such that a difference from a heat amount per unit area supplied to the substrate by radiation from the heating plate is reduced.

As described above, even when the lift pins function as support pins, the lift pins are supplied to the substrate by heat radiation from the heating plate and the amount of heat per unit area supplied to the substrate by heat conduction through the lift pins. By having a thermal conductivity such that the difference with the amount of heat per unit area becomes smaller, similarly, a large temperature difference does not occur between the contact portion and the non-contact portion of the lift pin functioning as a support pin,
It is possible to prevent the line width of the circuit pattern from being uneven due to the transfer.

Specifically, the thermal conductivity of the support pin or the lift pin functioning as the support pin is 3.0 to 12.0.
(W / m · K). With the thermal conductivity in such a range, the temperature difference between the contact portion and the non-contact portion of the support pin or the lift pin can be reduced, and the line width of the circuit pattern due to the transfer can be effectively prevented from being uneven. Can be. When the support pin or the lift pin is made of a specific ceramic, metal or alloy, a thermal conductivity in the above range can be obtained.

[0018]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 3 is a plan view showing an LCD substrate coating / developing processing system to which the present invention is applied.

This coating / developing processing system includes a cassette station 1 on which a cassette C accommodating a plurality of substrates G is placed, and a plurality of processing units for performing a series of processes including resist coating and developing on the substrates G. A processing unit 2 and an interface unit 3 for transferring a substrate G to and from an exposure apparatus (not shown). A cassette station 1 and an interface 3 are disposed at both ends of the processing unit 2, respectively. Have been.

The cassette station 1 has a transport mechanism 10 for transporting the LCD substrate between the cassette C and the processing section 2. And cassette station 1
, A cassette C is loaded and unloaded. The transport unit 10 includes a transport path 1 provided along the direction in which the cassettes are arranged.
A transfer mechanism 11 is provided that can move on the substrate 0a, and the transfer arm 11 transfers the substrate G between the cassette C and the processing unit 2.

The processing section 2 is divided into a front section 2a, a middle section 2b, and a rear section 2c.
2, 13 and 14, and each processing unit is disposed on both sides of these transport paths. Then, relay portions 15 and 16 are provided between them.

The front section 2a includes a main transfer device 17 movable along the transfer path 12. On one side of the transfer path 12, two cleaning units (SCRs) 21a and 21b are arranged. UV irradiation on the other side of the transport path 12
A cooling unit (UV / COL) 25, a heat treatment unit (HP) 26 and a cooling unit (COL) 27, each of which is stacked in two layers, are arranged.

The middle section 2b is provided with a main transfer device 18 movable along the transfer path 13. On one side of the transfer path 13, a resist coating unit (CT) 22 and a peripheral edge of the substrate G are provided. An edge remover (ER) 23 for removing a portion of the resist is provided integrally with the transport path 1.
On the other side of the heat treatment unit 3, a heat treatment unit (HP) 28 having two stacked layers, and a heat treatment / cooling unit (HP /
COL) 29, and an adhesion processing / cooling unit (AD / COL) 30 in which an adhesion processing unit and a cooling unit are vertically stacked.

Further, the rear section 2c is provided with a main transport device 19 movable along the transport path 14,
On one side, three development processing units 24a, 24
b and 24c are arranged, and on the other side of the transport path 14, a heat treatment unit 31 that is stacked in two layers vertically and two heat treatment units that are stacked vertically in a heat treatment unit and a cooling unit. Cooling unit (HP / CO
L) 32, 33 are arranged.

The processing section 2 includes a cleaning processing unit 21a and a resist processing unit 2 on one side of the transport path.
2. Only a spinner unit such as the development processing unit 24a is arranged, and only a heat processing unit such as a heating processing unit or a cooling processing unit is arranged on the other side.

A chemical solution supply unit 34 is arranged at a portion of the relay units 15 and 16 on the side where the spinner system unit is arranged, and further, a space 35 is provided in which the main transport device can be taken in and out.

The main transfer unit 17 transfers the substrate G to and from the transfer mechanism 11 of the transfer unit 10, and loads and unloads the substrate G to and from each processing unit in the former stage 2 a. Has a function of transferring the substrate G between the two. Further, the main transfer device 18 is connected to the relay unit 1.
5 and transfer the substrate G to the middle section 2
b has a function of loading / unloading the substrate G from / to each processing unit and transferring the substrate G to / from the relay unit 16. Further, the main transfer device 19 transfers the substrate G to and from the relay unit 16, and loads and unloads the substrate G to and from each processing unit of the subsequent unit 2 c, and further transfers the substrate G to and from the interface unit 3. Has the function of performing Note that the relay sections 15 and 16 also function as cooling plates.

The interface section 3 includes an extension 36 for temporarily holding the substrate when transferring the substrate to and from the processing section 2, and two buffer stages 37 provided on both sides thereof for disposing a buffer cassette. , Two buffer stages 37, and a transport mechanism 38 for loading and unloading the substrate G between these and an exposure apparatus (not shown). The transfer mechanism 38 includes a transfer arm 3 movable on a transfer path 38 a provided along the direction in which the extension 36 and the buffer stage 37 are arranged.
The transfer arm 39 transfers the substrate G between the processing unit 2 and the exposure apparatus.

By integrating and integrating the processing units in this manner, space can be saved and processing efficiency can be improved.

In the coating / developing processing system configured as described above, the substrate G in the cassette C is conveyed to the processing section 2, where the ultraviolet irradiation / cooling unit (UV) of the former section 2a is firstly used. / COL) 25, after the surface modification / cleaning treatment and subsequent cooling, the cleaning unit (S
After the scrubber cleaning is performed in CR) 21a and 21b, and is heated and dried in one of the heat treatment units (HP) 26,
It is cooled by one of the cooling units (COL) 27.

Thereafter, the substrate G is transported to the middle section 2b,
In order to enhance the fixability of the resist, the upper part of the unit 30 is subjected to a hydrophobic treatment (HMDS treatment) in the adhesion processing unit (AD), and is cooled in the cooling unit (COL). The resist is applied, and an excess resist on the periphery of the substrate G is removed by an edge remover (ER) 23. Thereafter, the substrate G is pre-baked in one of the heat processing units (HP) in the middle section 2b, and is cooled in the lower cooling unit (COL) of the unit 29 or 30.

Thereafter, the substrate G is transported from the relay section 16 to the exposure apparatus via the interface section 3 by the main transport apparatus 19, where a predetermined pattern is exposed. And
The substrate G is carried in again via the interface unit 3,
Development processing is performed in any of the development processing units (DEV) 24a, 24b, and 24c, and a predetermined circuit pattern is formed. The developed substrate G is subjected to post-baking in any one of the heat treatment units (HP) in the subsequent section 2c, and then cooled in the cooling unit (COL). Then, the sheet is stored in a predetermined cassette on the cassette station 1 by the transport mechanism 11.

Next, a resist coating unit (C) to be mounted on the coating and developing system according to the present embodiment.
The T) 22 and the edge remover (ER) 23 will be described. FIG. 4 shows a resist coating unit (CT)
And a schematic cross-sectional view and a schematic plan view showing the entire configuration of an edge remover (ER).

As shown in FIG. 4, the resist coating unit (COT) 22 and the edge remover (E)
R) 23 are integrally arranged on the same stage. The substrate G on which the resist is applied by the resist coating unit (COT) 22 is transported to an edge remover (ER) 23 by a pair of transport arms 41 movable along a guide rail 42. In addition, on the surface of the resist coating unit (COT) 22 on the side of the transport path 13, a carry-in port 22 a into which the substrate G is loaded by the main transfer device 18 is formed, and an edge remover (E) is provided.
An outlet 22a through which the substrate G is unloaded by the main transport unit 18 is formed on the surface of the R) 23 on the transport path 13 side.

Resist coating unit (COT) 22
Is a horizontally rotatable spin chuck 51 for sucking and holding the substrate G, a bottomed cylindrical shape surrounding the upper end of the spin chuck 51 and surrounding the substrate G sucked and held by the spin chuck 51 and having an open upper end. Rotating cup 52, a lid (not shown) that covers the upper end opening of the rotating cup 52, and a coater cup 53 that is fixedly arranged so as to surround the outer periphery of the rotating cup 52 and that prevents the resist from scattering at the time of resist application. , And a hollow ring-shaped drain cup 54 arranged so as to surround the coater cup 53. At the time of dropping the resist, which will be described later, the lid of the rotary cup 52 is opened, and the substrate G is rotated at a low speed together with the spin chuck 51 by a rotating mechanism (not shown). During the diffusion, the rotating cup 52 is in a state of being covered with a cover (not shown), and the substrate G is rotated at a high speed together with the spin chuck 51 by a rotating mechanism (not shown), and at the same time, the rotating cup 52 is also rotated. ing.

A resist coating unit (CO
T) 22 has an arm 55 having a spout 56 at the tip for supplying a resist solution and a solvent to the substrate G. The arm 55 is rotatable about a shaft 55a, and the ejection wing 6 is located above the substrate G adsorbed on the spin chuck 51 at the time of resist coating, and as shown in FIG. At the standby position further outside the drain cup 54. The jet head 56 is provided with a resist nozzle 57 for discharging a resist liquid and a solvent nozzle 58 for discharging a solvent such as thinner. The resist nozzle 57 is connected to a resist supply unit (not shown) via a resist supply pipe (not shown).
Is connected to a solvent supply unit (not shown) via a solvent supply pipe (not shown).

A mounting table 61 is provided on the edge remover (ER) 23, and a substrate G is mounted on the mounting table 61. On four sides of the substrate G, four remover heads 62 for removing excess resist solution from the edges of the four sides of the substrate G are provided. Each of the remover heads 62 has a substantially U-shaped cross section so as to discharge a thinner from the inside, and is moved by a moving mechanism (not shown) along four sides of the substrate G. Thus, each remover head 62 can move along each side of the substrate G and discharge the thinner while removing excess resist attached to the edges of the four sides of the substrate G.

In the resist coating unit (COT) 22 and the edge remover (ER) 23 thus integrally formed, first, the resist coating unit (COT) 22 together with the spin chuck 51 and the rotating cup 52 are used. The substrate G is rotated, and the spout 56
The arm 55 is rotated so that is located above the center of the substrate G, and the thinner is supplied from the solvent nozzle 58 to the center of the surface of the substrate G.

Subsequently, while the substrate G is being rotated, a resist is dropped from the resist nozzle 57 to the center of the substrate G and diffused throughout the substrate G. Thereafter, the rotary cup 52 is closed with a lid (not shown), and the substrate G is closed. The number of rotations is increased to adjust the thickness of the resist film.

The substrate G on which the resist application has been completed in this way is transported from the spin chuck 51 to the edge remover (ER) 23 by the transport arm 41, and is placed on the mounting table 61.
Placed on top. In Edge Remover (ER) 23,
The four remover heads 62 move along each side of the substrate G, and the excess thinner adhering to the edges of the four sides of the substrate G is removed by the discharged thinner.

Next, with reference to FIG. 5, a description will be given of the heat treatment unit (HP) for pre-baking (the upper stage of the units 28 and 29). FIG. 5 is a schematic sectional view of a heat treatment unit (HP) for prebaking.

As shown in FIG. 5, the heat treatment unit (HP) has a cover 71 which can be moved up and down, and a heating plate 72 for heating the substrate G is provided below the cover 71. Is placed horizontally. The heating plate 72 is provided with a heater (not shown), and can be set to a desired temperature.

A plurality of fixed support pins (proximity pins) 73 are provided on the surface of the heating plate 72, and these support pins 73 provide a small space between the heating plate 72 and the substrate. G is held.
That is, a proximity method is adopted, and the substrate G is heated by radiation heat from the heating plate 72 while avoiding direct contact between the heating plate 72 and the substrate G. Thereby, contamination of the substrate G from the heating plate 72 is prevented.

A plurality of lift pins 74 are provided so as to be able to move up and down through a plurality of holes of the heating plate 72. The lower portions of the lift pins 74 are supported by a support member 75 so as to be elastic and movable in the horizontal direction.
The support member 75 is configured to be raised and lowered by a lifting mechanism 76. Thus, when the support member 75 is raised by the lifting mechanism 76, the lift pins 74 are raised, the loaded substrate G is received by the lift pins, and then lowered by the lifting mechanism 76 to be provided on the surface of the heating plate 72. It is mounted on the support pin 73 thus set. After the completion of the heating process, the lift pins 54 are raised again by the lifting mechanism 76 to lift the substrate G to the unloading position.

In this embodiment, the fixed support pins (promiscuous pins) 73 are used to generate heat per unit area supplied to the substrate G through the support pins 73 by heat conduction.
The heat plate 72 is made of a material having a thermal conductivity such that the difference from the amount of heat supplied to the substrate by radiation from the heating plate 72 per unit area becomes small, and preferably, these are made of substantially equivalent materials. Specifically, the support pin 73 is preferably made of a material having a thermal conductivity (λ) of 3.0 to 12.0 (W / m · K). Such materials include:
Ceramics, metals and alloys include granite (λ =
4.3 (W / m · K)), zirconia (λ = 6.3 (W
/ M · K)), Incoloy 800 (λ =
11.5 (W / m · K)).

In the heat processing unit (HP) configured as described above, the resist liquid is applied by the above-described resist coating unit (COT) 22 and the substrate G that has been subjected to the end face processing by the edge remover (ER) 23 is carried in. ,
The lift pins 74 are received by the lifted lift pins 74. Thereafter, the substrate G is placed on the support pins 73 by lowering the lift pins 74,
Prebaking is performed at a temperature of 00 to 120 ° C.

In this case, as described above, the support pins (promissivity pins) 73 are separated from the heat quantity Q per unit area supplied to the substrate G by heat conduction through the support pins 73 and the heating plate 72. By using a material having a thermal conductivity such that the difference from the heat quantity q per unit area supplied to the substrate by the radiation becomes small, and preferably, as shown in FIG. Since there is no large difference in temperature between the contact portion and the non-contact portion of the support pin 73 and no large difference in resist sensitivity, FIG.
As shown in (b), in the circuit pattern after exposure and development, it is possible to prevent the line width of the circuit pattern from being uneven due to the transfer of the support pins 73.

Specifically, the support pin 73 is made of a material having a thermal conductivity (λ) of 3.0 to 12.0 (W / m · K), so that the support pin 73 is thermally conductive through the support pin 73. The difference between the amount of heat Q per unit area supplied to the substrate G and the amount of heat q per unit area supplied to the substrate by radiation from the heating plate 72 can be made sufficiently small.

On the other hand, when the support pins 73 are made of fluororesin (PCTFE or the like), the thermal conductivity (λ) is as small as 0.24 (W / m · K), As shown in FIG. 1A, the heat quantity Q per unit area supplied to the substrate G by heat conduction via the support pins 73 is larger than the heat quantity q per unit area supplied to the substrate by radiation from the heating plate 72. The support pin 73 is considerably reduced.
1B is lower than the temperature of the non-contact portion, the line width of the portion corresponding to the support pin becomes narrower in the circuit pattern after exposure and development, as shown in FIG. 1B.

The support pin 73 is made of stainless steel (SU
S304), the thermal conductivity (λ)
Is as large as 16.0 (W / m · K), and FIG.
As shown in (a), the amount of heat Q per unit area directly transmitted to the substrate G via the support pins 73 is more than the amount of heat q per unit area supplied to the substrate G by radiation from the heating plate 72. Since the temperature of the portion contacting the support pin 73 is higher than the temperature of the non-contact portion,
As shown in (b), in the circuit pattern after exposure and development, the line width of the portion corresponding to the support pin becomes large.

As described above, in this embodiment, the support pins 7
Since the thermal conductivity (λ) of the substrate 3 is appropriately controlled, the temperature of the portion where the support pins 73 contact the substrate G and the temperature of the non-contact portion of the substrate G can be made substantially equal to each other. Transfer of the support pins 73 due to the difference in sensitivity,
That is, the line width of the portion corresponding to the support pin 73 can be prevented from being uneven.

Further, as shown in FIG.
2, the substrate G may be supported by the lift pins 74 without using the support pins 73, and the substrate G may be heated by the proximity method. In this case, the lift pins 74 functioning as the support pins are similar to the support pins 73. It is made of a material having the following thermal conductivity.

The fixed support pin 73 and the lift pin 7
Even in the case where the lift pins 74 are used together, the lift pins 74 support the substrate G for a short time, but the lift pins 74 also have the same thermal conductivity as the lift pins 73 from the viewpoint of completely preventing transfer. It is desirable to use a material having the above.

Note that the present invention is not limited to the above embodiment, and various modifications are possible. For example, the material of the support pin is not limited to the material shown in the above embodiment, and any material having a thermal conductivity that does not cause a temperature difference between the contact portion and the non-contact portion of the support pin on the substrate can be adopted. is there. Also,
In the above embodiment, an LCD substrate is used as a substrate to be processed. However, the present invention is not limited to this, and any substrate can be used as long as a substrate, such as a semiconductor wafer, on which a pattern is formed by photolithography using a resist.

[0055]

As described above, according to the present invention,
A material having a heat conductivity such that the difference between the amount of heat per unit area supplied to the substrate by heat conduction through the support pins and the amount of heat per unit area supplied to the substrate by radiation from the heating plate is reduced. Since the support pin is formed, a large temperature difference does not occur between the contact portion and the non-contact portion of the support pin, and it is possible to prevent the line width of the circuit pattern from being uneven due to the transfer.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a state in which heat is supplied from a heating plate to a substrate when a support pin having low thermal conductivity is used;
FIG. 4 is a plan view showing a circuit pattern formed on a substrate by performing baking processing using the support pins, and further performing exposure and development.

FIG. 2 is a cross-sectional view showing a state in which heat is supplied from a heating plate to a substrate when a support pin having high thermal conductivity is used;
FIG. 4 is a plan view showing a circuit pattern formed on a substrate by performing baking processing using the support pins, and further performing exposure and development. Sectional view showing the state of supply of heat from the to the substrate,
FIG. 4 is a plan view showing a circuit pattern formed on a substrate by performing baking processing using the support pins, and further performing exposure and development.

FIG. 3 is a plan view illustrating an LCD substrate coating / developing system to which the heat processing unit according to the embodiment of the present invention is applied;

FIG. 4 is a schematic plan view showing an overall configuration of a resist coating unit (CT) and an edge remover applied to the system of FIG. 3;

FIG. 5 is a schematic sectional view of a heat treatment unit (HP) applied to the system of FIG. 3;

FIG. 6 is a cross-sectional view showing a state in which heat is supplied from a heating plate to a substrate when a support pin having thermal conductivity according to the present invention is used, and baking is performed using the support pin;
FIG. 4 is a plan view showing a circuit pattern formed on a substrate by further performing exposure and development.

FIG. 7 is a cross-sectional view showing a state in which heat is supplied from a heating plate to a substrate when a support pin having heat conduction according to the present invention is used, and baking using the support pin, and further exposing and developing. FIG. 4 is a plan view showing a circuit pattern formed on a substrate by the method.

[Explanation of symbols]

 22; resist coating unit 23; edge remover HP; heating unit 72; heating plate 73; support pins (proximity pins) 74; lift pins G;

Claims (6)

[Claims] 1. A heating apparatus for heating a substrate coated with a resist liquid prior to exposure and development processing, comprising: a heating plate for heating the substrate coated with the resist liquid by radiant heat; A lift pin for elevating and lowering the substrate at a heating position above the heating plate; and a support pin fixed on the heating plate and supporting the substrate at a small interval from the heating plate, The pin has a thermal conductivity such that the difference between the amount of heat per unit area supplied to the substrate by heat conduction through the support pins and the amount of heat per unit area supplied to the substrate by radiation from the heating plate is reduced. A heat treatment apparatus comprising: 2. The support pin has a thermal conductivity of 3.0 to 1.
2. The light emitting device according to claim 1, wherein the power is 2.0 (W / m · K).
3. The heat treatment apparatus according to claim 1. 3. The heat treatment apparatus according to claim 2, wherein the support pins are made of ceramic, metal or alloy. 4. A substrate heating apparatus for heating a substrate coated with a resist liquid prior to exposure processing and development processing, wherein the heating plate heats the substrate coated with the resist liquid by radiant heat. Lifting and lowering the substrate, comprising lift pins for supporting the substrate at a small distance from the heating plate, wherein the lift pins are provided with heat per unit area supplied to the substrate by heat conduction through the lift pins. A heat treatment apparatus having a thermal conductivity such that a difference from a heat amount per unit area supplied to the substrate by radiation from the heating plate is reduced. 5. The thermal conductivity of the lift pin is 3.0-1.
5. The method according to claim 4, wherein the ratio is 2.0 (W / m · K).
3. The heat treatment apparatus according to claim 1. 6. The lift pin according to claim 5, wherein the lift pin is made of ceramic, metal or alloy.
3. The heat treatment apparatus according to claim 1.