JP3430165B2 - Method for manufacturing electron-emitting device - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a display,
The present invention relates to a method for manufacturing an electron-emitting device such as a cold cathode electron source used in a vacuum tube, a semiconductor manufacturing apparatus, or the like.

[0002]

2. Description of the Related Art FIG. 16 is a sectional view showing a conventional electron-emitting device disclosed in, for example, Japanese Patent Laid-Open No. 4-94033. In the figure, 11 is an emitter, 14 is a silicon substrate, 12 is an insulating film, and 13 is an extraction electrode provided around the emitter 11 with a space, for example, having an inner diameter of 2 μm. Reference numeral 131 is a thermal oxide film provided in the step of forming the emitter, and 132 is an anode plate provided so as to face the emitter 11. The emitter 11 is formed in a conical shape by etching the silicon substrate 14 and sharpening the curvature radius of the tip to, for example, 1000 Å or less.

Next, the operation will be described. When a voltage is applied between the silicon substrate 14 and the extraction electrode 13 so that the extraction electrode 13 side is positive, the voltage is applied to the space between the tip of the emitter 11 and the extraction electrode 13. Further, since the tip of the emitter 11 is sharp, the electric field of the tip of the emitter 11 and the extraction electrode 13 is concentrated in the space near the tip of the emitter 11. When the voltage of the extraction electrode 13 is further increased, electrons are emitted from the tip of the emitter 11 by the tunnel effect. At this time, if a positive voltage is applied to the anode plate 132, the emitted electrons flow to the anode plate 132, and the anode current is observed. By modulating the extraction voltage across the voltage at which the anode current begins to be observed, this electron-emitting device can act as an electron source.

FIG. 17 is a sectional view showing the method of manufacturing the electron-emitting device in the order of steps. In FIG. 17A, a circular pattern 61 made of a SiO 2 film is formed on the low resistance silicon substrate 14 by a thermal oxidation process, a lithography process and a dry etching process. In FIG. 17B, the silicon substrate is subjected to reactive ion etching (hereinafter referred to as RIE) using the circular pattern 61 of the SiO 2 film as a mask to form a cone 51 which is a source of the emitter under the mask 61. Next, a thermal oxidation film 131 is formed on the surface of the cone 51 by thermal oxidation treatment as shown in FIG. In this state, the insulating film 12 and the extraction electrode 13 are vapor-deposited as shown in FIG. 17D, and then the mask 61 and the insulating film material and the extraction electrode material formed on the mask 61 are lifted off by wet etching. Thermal oxide film 131
Are removed to obtain the electron-emitting device shown in FIG.

In addition, J. Vac. Sci. Techno
l. B12 (2), Mar / Apr 1994 p. 66
2-665 and J. Vac. Sci. Technol.
B13 (2), Mar / Apr 1995 p. 441
~ 444, the tip of the emitter provided on the silicon substrate is formed into a porous shape composed of fine fiber-like aggregates with a diameter of several 10 Å by using the anodization method, and the radius of curvature of the emitter tip is made small. A method has been proposed in which the radius of curvature of the fiber is used to concentrate the electric field and reduce the magnitude of the extraction voltage at which the emission current begins to be observed.

[0006]

In the above conventional electron-emitting device, the anode current is observed because the magnitude of the electric field strength in the space near the tip of the emitter depends on the radius of curvature of the tip of the emitter. The magnitude of the extraction voltage to start is RIE shown in FIG. 17 (b), and FIG. 17 (c).
It depends on the processing accuracy of the thermal oxidation process shown in FIG. 17 and the wet etching of FIG. Therefore, if the radius of curvature of the tip of the emitter is made smaller, the magnitude of the voltage at which the anode current starts being observed becomes smaller. However, if the etching depth of RIE is increased or the thickness of the thermal oxide film in the thermal oxidation process is made slightly thicker than the ideal value, the height of the emitter sharply decreases due to the sharp tip, and the concentration of the electric field deteriorates. Therefore, it is not desirable to reduce the radius of curvature of the emitter to the limit of processing accuracy. Therefore, the magnitude of the voltage at which the anode current begins to be observed cannot be reduced so much. For this reason, an expensive high-voltage type drive circuit is required as a drive circuit for driving the extraction voltage, and as a result, there is a problem in that the cost of a device using an electron-emitting device such as a display or a vacuum tube increases.

Further, in field emission, electrons are emitted by passing through a potential barrier created by a work function due to the tunnel effect, so that the work function of the emitter material is another factor that determines the emission current characteristics in addition to the above-mentioned electric field. Since the Fermi level of metal is in the band of the conduction band having a high density of states, the Fermi level is unlikely to change due to impurities, surface states, and the like. This feature holds true not only for metals but also for good conductor materials with a high density of states at the Fermi level. On the other hand, since silicon, which is the emitter material, is a semiconductor, the Fermi energy is in the band gap, and its level fluctuates depending on the impurity level and the surface level. Therefore, the work function, which is the difference between the vacuum energy level and the Fermi energy, also fluctuates. This variation in work function causes variation in emission current characteristics. Therefore, the electron-emitting device using silicon as an emitter material has a drawback in that it is difficult to obtain a certain characteristic as compared with a metal or a good conductor member, and is easily changed with time.

Further, since the porous silicon has a large surface area, it reacts extremely easily with water and oxygen and is easily oxidized even if left in the air or heated in the air. The oxide of the oxidized porous silicon layer serves to thicken the tunnel barrier and prevent field emission. Furthermore, even if there is no water or oxygen in the porous silicon, if the temperature is raised, the hydrogen bonded on the surface will be desorbed at 400 ° C or less and the quality will change.
It has the property of deteriorating when the temperature is raised to 0 ° C. Therefore, the method of forming porous silicon on the surface of the emitter in order to reduce the extraction voltage is that the characteristics are deteriorated by assembly, and the electron-emitting device is used in processes such as glass sealing and baking exhaust when mounting it on a display or a vacuum tube. There is a problem that the electron emission characteristics change when the temperature rises. Further, since the porous silicon itself is a semi-insulator, if the thickness of the porous silicon formed on the emitter surface is large, the emission current cannot be obtained. For this reason, there is a problem that the characteristics greatly vary unless the film thickness is strictly controlled during the anodizing treatment.

The present invention has been made to solve the above problems, and can lower the extraction voltage for driving and eliminate the deterioration of the emission current due to the storage or assembly process. The purpose is to reduce variations and fluctuations in characteristics.

[0010]

A method of manufacturing an electron-emitting device according to the present invention comprises a step of forming a mask made of silicon oxide on a silicon substrate, and a step of forming a cone under the mask by etching using the silicon oxide as a mask. Part, a step of depositing an insulating film on the silicon substrate on which the cone part is formed, a step of forming an extraction electrode on the insulating film, a mask and an insulating film formed on the mask. The process includes a step of removing the extraction electrode by etching to form an emitter, a step of forming a porous silicon layer on the surface of the emitter, and a step of removing the porous silicon layer on the surface of the emitter by etching.

Further, the step of forming an insulating film on the silicon substrate, the step of forming a lead electrode on this insulating film, and the etching of the insulating film and the lead electrode at a portion corresponding to the emitter on the silicon substrate are performed. To form an emitter, a step of forming a porous silicon layer on the surface of the emitter, and a step of removing the porous silicon layer on the surface of the emitter by etching.

Further, the step of removing the porous silicon layer on the surface of the emitter by etching includes the step of removing the porous silicon layer on the surface of the emitter by etching and then covering the surface of the emitter with a metal or a good conductor member. It is a waste.

Furthermore, the metal or good conductor member covering the surface of the emitter is W, TiN, Ni, Pt, Au, Cr.
Is one of.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Related Art Example 1. FIG. 1 is a sectional view of an electron-emitting device in which a metal is formed on a porous silicon layer.
Reference numeral 11 denotes an emitter, the surface of which is a porous silicon layer, and Ni is formed in the porous silicon layer 15. Reference numeral 12 is an insulating film between the silicon substrate 14 and the extraction electrode 13. Reference numeral 131 is a thermal oxide film provided in the step of forming the emitter. FIG. 2 is an enlarged schematic view of the surface of the electron emitting portion of the electron emitting device according to FIG. 14 is a silicon substrate, 22 is a sponge-like porous silicon layer, and 23 is Ni formed on the porous silicon layer.

In the electron-emitting device formed of only porous silicon, there is a problem that the porous silicon is oxidized by being left in the air and heated at 200 ° C. in the air, and the emission current cannot be obtained. However, in the electron-emitting device formed of Ni, the emission current was not stopped by being left in the air or being heated in the air. Moreover, the electron-emitting device formed of Ni did not deteriorate the emission current characteristics as compared with the electron-emitting device formed only of porous silicon. Further, in the electron-emitting device formed only of porous silicon, there is a problem that the emission current cannot be obtained at all when the thickness of the porous silicon becomes 0.6 μm or more. However, by forming Ni in the porous silicon layer, an emission current can be obtained even when the thickness of the porous silicon is 0.6 μm or more. The above effect is obtained by Au, P other than Ni
A metal such as t or Cr could be similarly obtained. Also,
The Ni formed in the porous silicon layer is not limited to being formed inside the porous silicon, but the same effect can be obtained even if Ni is formed on the surface of the porous silicon.

As described above, in Related Art 1, by forming a metal on the porous silicon layer on the emitter surface, the extraction voltage at which the emission current starts to be observed can be lowered regardless of the thickness of the porous silicon layer. The effect is to obtain an electron-emitting device whose characteristics are not easily deteriorated by leaving it in the air, heating it in the air, baking it in a vacuum, and the like.

Related technology example 2. The method of manufacturing the electron-emitting device shown in FIG. 1 will be described below. First, as shown in FIG. 17, the shape of the field emission type electron-emitting device including the extraction electrode 13, the insulating film 12, and the emitter 11 made of silicon was formed by using the method of the conventional example. The emitter 11 was used as an anode and the Vac. Sci. Technol. B
13 (2), Mar / Apr 1995 p. 441-
Anodization treatment was performed by the method described in No. 444 to form porous silicon on the surface of the emitter 11. That is, in the anodizing cell shown in FIG. 3, a chip 31 having an electron-emitting device formed on a partition wall 38 of an electrolytic solution was placed and immersed in the electrolytic solution 36, and an electric current was passed between a platinum anode 35 and a platinum cathode 32. . The electrolytic solution 36 is HF, H2O, C2H5O.
An aqueous solution containing H was used. In the anodization process, the emitter is n
N-type silicon or p-type silicon is possible, and the emitter is n
In the case of type silicon, the tungsten lamp 3 is used as the emitter.
7 was used to perform anodization treatment while irradiating light. As a result, a porous silicon film was formed on the surface of the emitter. If the emitter is p-type silicon, 1018 to 1
Using a substrate containing B of 019 cm −3, anodization treatment was performed without irradiating light.

Next, this sample was washed with water in a dark place and was not dried, this time, by using the electroplating bath shown in FIG. 4, the emitter 11 was exposed to the electrolytic bath of the anode and the metal was electroplated to form the emitter surface. Formed. A Ni electrode is used as the anode 45, a Pt electrode is used as the cathode 42, and NiSO 4, N
Ni in the electrolyte solution 46 containing iCl2, H3BO3
Plated. With n-type silicon, the tungsten lamp 37 was used to perform plating while irradiating the exposed silicon portion on the back surface of the chip 31 with light. When the emitter and the substrate were p-type silicon, the same treatment was performed without irradiating light and plating was performed.

The distribution of Ni in the depth direction was examined by Auger analysis for a porous silicon film on a silicon wafer plated with Ni by the method of Related Art Example 2. As a result, the same depth as that of the porous silicon film was obtained. Further, it was found that Ni was distributed, and it was confirmed that metal was present in the porous silicon. Here, N is used as the metal to be plated.
Although i is used, any metal that can be electroplated may be used. For example, Au, Pt, Cr, or the like is also possible. Further, in Related Art Example 2, since a metal is formed on the surface of the porous silicon by electroplating using silicon having a surface on which porous silicon is formed as a cathode, the surface of the silicon is porous from the interface between the silicon and the porous silicon layer. A continuous metal layer is formed in the quality silicon layer. This has the effect of leading an electric current to the surface even if the porous silicon is oxidized.

Related technology example 3. In Related Art Example 2, Ni was formed on the porous silicon layer by electroplating, but Ni can be formed on the porous silicon layer by electroless plating. In the same manner as in Related Art Example 2, the electron-emitting device shown in FIG. 1 was prepared by forming a porous silicon layer on the surface of the emitter 11. Then, the electron-emitting device was immersed in an SnCl 2 aqueous solution to form Sn nuclei in the porous silicon layer. This was washed with water and then immersed in an aqueous PdCl 2 solution to change Sn nuclei into Pd nuclei. And Ni heated to 95 ° C
It was immersed in an SO4 aqueous solution to deposit Ni on the surface of the porous silicon film. Also in the electron-emitting device produced by this method, the same effect as in Related Art Example 2 was confirmed.

Related technology example 4. FIG. 5 is a cross-sectional view of an electron-emitting device including a truncated cone-shaped emitter. 1 in the figure
Reference numeral 1 denotes a truncated cone-shaped emitter obtained by etching the n-type silicon substrate 14, and a porous silicon layer 15 having a thickness of 0.1 μm is formed on the surface by anodization treatment in the same manner as in the related technical example 2, and further porous by plating. Ni on the silicon layer 15
Is formed. The top surface of the emitter is 0.2-0.
The circular shape was about 5 μm. Further, the opening diameter of the extraction electrode was formed to be 2 μm.

The structure consisting of the truncated cone-shaped emitter 11, the insulating film 12, and the extraction electrode film 13 before forming Ni on the porous silicon layer was prepared by the method shown in FIG. That is, (a) a circular mask 61 made of SiO 2 is formed on the n-type silicon substrate 14, (b) reactive ion etching is performed to form a cone 51 under the mask, (c) the insulating film 12 and the lead-out. Electrode 13 is deposited,
(D) Mask 61 and mask 6 by wet etching
The insulating film 12 and the extraction electrode 13 formed on the substrate 1 are removed to form a truncated cone emitter 11 made of n-type silicon.
To form. (E) Thereafter, the surface of the emitter was subjected to anodization treatment to form the porous silicon layer 15. After that, Ni was formed on the porous silicon layer 15 by the plating method shown in Related Art Example 2 or Related Art Example 3.

It was confirmed that also in the electron-emitting device according to the related art example 4, the change in emission current due to leaving in the air, heating in the air, and baking in a vacuum is smaller than that of the electron-emitting device formed with only porous silicon. . Furthermore, the electron-emitting device according to the related art example 4 can be manufactured at a low cost because the number of manufacturing steps is smaller than that of the related art example 1, and the shape can be controlled more easily than the cone-shaped emitter is manufactured. This has the effect of reducing variations in emission current characteristics due to. In the above process, the shape of the emitter is a truncated cone, but the same effect can be obtained even if the shape of the cylinder or the SiO2 mask 61 is polygonal and the shape of the surface is polygonal.

Related technology example 5. FIG. 7 shows a sectional view of an electron-emitting device of Related Art Example 5. In the figure, 12 is an insulating film, 1
Reference numeral 3 is an extraction electrode, 14 is a silicon substrate, and 15 is an emitter in which a metal is formed on a porous silicon layer which has been anodized by the method of Related Art 2 on the silicon substrate 14. FIG. 8 shows a method of manufacturing the field emission device shown in FIG. (A) The insulating film 12 is formed on the n-type silicon substrate 14 by the CVD method, and the extraction electrode 13 is further formed by the sputtering method. (B) The emitter 11 is formed by photolithography and reactive ion etching. The extraction electrode 13 and the insulating film 12 in the portion to be formed are etched. (C)
The exposed surface of the silicon substrate was subjected to anodization to form an emitter made of the porous silicon layer 15. Further, by the plating method shown in Related Technology Example 2 or Related Technology Example 3, Ni is used.
Was formed on the porous silicon layer 15.

This electron-emitting device has an effect that it can be manufactured by a very simple process as described above. In addition, there is no etching process that tends to cause process variations, and the quality is stabilized. It was confirmed that also in the electron-emitting device according to Related Art Example 5, the change in emission current due to leaving in the air, heating in the air, and baking in vacuum was smaller than that of the electron-emitting device in which only porous silicon was formed.

Embodiment 1. FIG. 9 is a sectional view of the electron-emitting device of this embodiment. Reference numeral 11 is an emitter having a projection 91 formed on its surface. Reference numeral 12 is an insulating film between the silicon substrate 14 and the extraction electrode 13. Hereinafter, a method for manufacturing the electron-emitting device according to the present embodiment shown in FIG. 9 will be described. Similar to the related art example 2, after forming the shape of the field emission type electron-emitting device including the extraction electrode 13, the insulating film 12, and the emitter 11 made of silicon by the method described in the conventional example shown in FIG. Then, this was subjected to anodization treatment in the same manner as in Related Art Example 2 to form a porous silicon layer on the surface of the emitter 11. Then etchant HF: HN
O3: CH3 COOH: H2 O = 1: 7: 17:
By removing only the porous silicon having a high etching rate by 250, the interface between the porous silicon and the silicon substrate 14 was exposed. FIG. 10 is an enlarged schematic view of the surface of the emitter 11 of the electron-emitting device shown in FIG. 9 thus formed. In FIG. 10, 11 is an emitter made of silicon, and 91 is a protrusion made of silicon that appears after removing the sponge-like portion of porous silicon.
Reference numeral 92 is a recess formed by removing the porous silicon.

In the electron-emitting device of this embodiment, the emitter is made of silicon. Therefore, the electron-emitting device formed of porous silicon is left in the atmosphere, heated at the time of die bonding of the chip, and in vacuum. Deterioration of characteristics due to baking was less likely to occur. In addition, when the porous silicon is removed after the porous silicon is formed, as shown in FIG.
Since the roughness as shown in (1) remains on the emitter surface and the tip of the emitter is sharpened, an emission current larger than that of the electron-emitting device before the formation of porous silicon was obtained.

Therefore, in this embodiment, the extraction voltage at which the emission current starts to be observed can be made lower than that of the electron-emitting device before the formation of porous silicon, and the atmosphere observed in the electron-emitting device formed of porous silicon can be reduced. There is an effect that characteristics deterioration due to leaving in the middle, heating at the time of die bonding of the chip, and baking in a vacuum hardly occur.

Embodiment 2. FIG. 11 shows the electron-emitting device of this embodiment. In the figure, 11 is an emitter, 14 is a silicon substrate, 12 is an insulating film, and 13 is an extraction electrode. Reference numeral 91 is a protrusion formed by exposing the interface between the porous silicon and the silicon substrate 14. Further, reference numeral 92 is a recess formed by removing the porous silicon. Furthermore, it is possible to change the conditions of the anodizing treatment with almost the same manufacturing method, as shown in FIG.
An electron-emitting device having a structure as shown in 2 can also be manufactured.

FIG. 13 shows a method of manufacturing the electron-emitting device of this embodiment. (A) is a method similar to that of Related Art Example 4, in which the emitter 11 and the insulating film 12 made of frustroconical silicon,
This is a structure in which the extraction electrode 13 is formed.
Next, as shown in (b), a porous silicon layer 15 is formed on the emitter 11 as in Related Art 2. At this time, the interface between the porous silicon and the silicon substrate 14 is formed with a protruding shape 91 as shown in the figure. In (c), the formed porous silicon layer 15 is etched and removed as shown in the first embodiment. The porous silicon is removed but instead an interface structure with random protrusions 91 appears.

Since the emitter of the electron-emitting device of the present invention is also silicon, the characteristics of the electron-emitting device formed of porous silicon are left in the atmosphere, heated during die bonding of the chip, and baked in vacuum. Deterioration is less likely to occur. On the other hand, a protruding structure at the interface appeared on the surface of the emitter made of silicon, and this became the electron emission point, so that the emission current could be obtained. Further, a structure as shown in FIG. 12 in which the projections were enlarged by increasing the film thickness of the anodizing treatment and setting the conditions of the anodizing treatment appropriately was also made. With this structure, a high electric field was obtained at the tip of the protrusion even with the same extraction voltage, and electrons could be emitted at a low voltage.

Embodiment 3. FIG. 14 shows the electron-emitting device of this embodiment. In the figure, 11 is an emitter, 14 is a silicon substrate, 12 is an insulating film, and 13 is an extraction electrode. Reference numeral 91 is a protrusion formed by exposing the interface between the porous silicon and the silicon substrate 14. Further, a structure as shown in FIG. 15 can be manufactured by changing the conditions of anodizing treatment by almost the same manufacturing method. In the electron-emitting device of the present embodiment, the planar emitter 11 whose surface is made of porous silicon is formed by the same method as the related art example 5. At this time, a projection-like shape is formed on the interface. Thereafter, the porous silicon layer formed by etching is removed as in the second embodiment, and the interface between the porous silicon and the silicon substrate 14 is exposed.

Since the emitter is also silicon in the electron-emitting device of the present embodiment, the electron-emitting device formed of porous silicon is left in the atmosphere, heated at the time of die bonding of the chip, and baked in vacuum. Deterioration of characteristics due to is less likely to occur. On the other hand, on the surface of the emitter made of silicon, many protruding structures at the interface appeared, and these became the electron emission points, so that the emission current could be obtained. Also,
The structure of this embodiment has few steps and can be manufactured at low cost.

Fourth Embodiment A 300 Å Ni film was formed on the surface of the electron-emitting device obtained in the first, second, and third embodiments by electroplating in the same manner as in Related Art Example 2. In the electron-emitting device thus manufactured, the variation in emission current was reduced, and the change in characteristics due to baking in vacuum was reduced. Further, although Ni is used in the present embodiment, the same effect can be obtained even with metals such as Au, Pt, and Cr.
Further, in the present embodiment, plating is performed by the electroplating method described in Related Technology Example 2, but the electroless plating method described in Related Technology Example 3 may be used instead of the electroplating method. Further, the same effect can be obtained by forming a film of a good conductor member such as W, TiN, Pt, etc. by the ion beam sputtering method described in Related Art 6 below.

Related technology example 6. A method of forming a metal or a good conductor member on the porous silicon layer by a method different from the plating method described in Related Art Example 2 or Related Art Example 3 will be described. First, the shape of the field emission electron-emitting device shown in FIG. 1 having the extraction electrode 13, the insulating film 12, and the emitter 11 made of silicon was created. Then, as in Related Art Example 2, a porous silicon layer was formed on the surface of the emitter 11 by anodization. After that, a good conductor member film of W of about 100 Å was formed on the surface of this electron-emitting device by the ion beam sputtering method. However, just before ion beam sputtering, the surface of the emitter is sputter-etched by several Å.

After this, the emitter 11 and the extraction electrode 13
When the insulating characteristics between and were examined, there was almost no change from that before film formation. Further, after that, the electron-emitting device was annealed at 450 ° C. for 30 minutes in vacuum. The electron-emitting device thus produced did not lose its emission current even after being left in the air for about one week or after measuring its characteristics after die bonding. Moreover, the characteristics did not deteriorate even when baking in a vacuum. Further, the change over time of the emission current in vacuum was smaller and more stable than that of the electron-emitting device having only silicon as the emitter. In addition to W, TiN or Pt can be used as the covering metal or good conductor member to obtain the same effect. Further, the method of Related Art Example 6 is
It is also possible to use the related art example 2 or the related art example 3 for forming a metal on the porous silicon layer.

In Related Art Example 6, after an emitter having porous silicon is formed, a metal or a good conductor member is formed on the surface of the emitter by an ion beam sputtering method to impair the insulation characteristic between the extraction electrode and the emitter. Since it is possible to form a thin metal or good conductor member film on the surface of the emitter, the characteristics of the obtained electron-emitting device are less likely to deteriorate due to leaving in the air, heating in the air, baking in a vacuum, etc. . Further, in Related Art Example 6, since the metal or the good conductor member is formed on the surface of the emitter by the ion beam sputtering method after the emitter having the porous silicon is formed, the good conductor member such as W or TiN which is difficult to form by the plating method is formed. Since the emitter can be formed, deterioration of characteristics due to leaving the emitter in the air, heating in the air, and baking in a vacuum is less likely to occur, and the effect of aging change of emission current is smaller than that of silicon.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of a related technology example 1.

FIG. 2 is an enlarged schematic view of the emitter surface of FIG.

FIG. 3 is a cross-sectional view showing an electrolytic cell of Related Art Example 2.

FIG. 4 is a cross-sectional view showing an electrolytic cell of Related Art Example 2.

FIG. 5 is a cross-sectional view showing an example of a related technology example 4.

FIG. 6 is a diagram illustrating a manufacturing process of Related Art Example 4.

FIG. 7 is a cross-sectional view showing an example of a related technology example 5.

FIG. 8 is a diagram showing a manufacturing process of Related Art Example 5.

FIG. 9 is a sectional view showing an example of the first embodiment of the present invention.

FIG. 10 is an enlarged schematic view of the emitter surface of FIG.

FIG. 11 is a sectional view showing an example of a second embodiment of the present invention.

FIG. 12 is a sectional view showing an example of a second embodiment of the present invention.

FIG. 13 is a diagram showing a manufacturing method according to the second embodiment of the present invention.

FIG. 14 is a sectional view showing an example of a third embodiment of the present invention.

FIG. 15 is a sectional view showing an example of a third embodiment of the present invention.

FIG. 16 is a cross-sectional view showing a conventional electron-emitting device.

FIG. 17 is a cross-sectional view showing a method of manufacturing a conventional electron-emitting device.

[Explanation of symbols]

11 Emitter 12 Insulating Film 13 Extraction Electrode 14 Silicon Substrate 15 Porous Silicon Layer 31 Silicon Chip Having Electron-Emitting Element 32 Cathode 33 Constant Current Source 35 Anode 36 Electrolyte Solution 37 Light Source 38 Partition Wall 42 Cathode 45 Anode 46 Electrolyte 51 Cone Silicon (cone) 61 Oxide film mask 91 Protrusions 92 formed at the interface between the porous silicon layer and the silicon substrate Depression 131 after removal of the porous silicon 131 Thermal oxide film 132 Anode plate.

Front Page Continuation (72) Inventor Koji Tsuji Harada 2-3-3 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation (72) Inventor Masaru Kinugawa 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation (72) Inventor Yuryu Shono 2-3-3 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Co., Ltd. (56) Reference JP-A-7-335116 (JP, A) JP-A-5-274998 (JP, A) Japanese Unexamined Patent Publication No. 8-87956 (JP, A) Japanese Patent Laid-Open No. 7-509803 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01J 9/02 H01J 1/30

Claims (4)

(57) [Claims] 1. A step of forming a mask made of silicon oxide on a silicon substrate, a step of etching using the silicon oxide as a mask to form a cone portion under the mask, and the silicon substrate on which the cone portion is formed. A step of depositing an insulating film thereon, a step of forming an extraction electrode on the insulating film, and a step of etching the mask, the insulating film formed on the mask and the extraction electrode to form an emitter. And a step of forming a porous silicon layer on the surface of the emitter, and a step of removing the porous silicon layer on the surface of the emitter by etching. 2. A step of forming an insulating film on a silicon substrate, a step of forming a lead electrode on the insulating film, and a step of etching the insulating film and the lead electrode at a portion corresponding to an emitter on the silicon substrate. Electron to remove the porous silicon layer on the surface of the emitter, and to remove the porous silicon layer on the surface of the emitter by etching. Method of manufacturing an emitting device. 3. The step of etching away the porous silicon layer on the surface of the emitter includes the step of etching away the porous silicon layer on the surface of the emitter, and then covering the surface of the emitter with a metal or a good conductor member. The method for manufacturing an electron-emitting device according to claim 1 or 2, characterized in that. 4. The method of manufacturing an electron-emitting device according to claim 3, wherein the metal or the good conductor member covering the surface of the emitter is any of W, TiN, Ni, Pt, Au and Cr.