JP3241257B2 - Method for manufacturing electron-emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a display,
Vacuum tube, a method of manufacturing the electron emission element of the cold cathode electron source or the like for use in semiconductor manufacturing equipment or the like.

[0002]

2. Description of the Related Art FIG. 16 is a cross-sectional view showing a conventional electron-emitting device described in, for example, Japanese Patent Application Laid-Open No. 4-94033. In the figure, 11 is an emitter, 14 is a silicon substrate, 12 is an insulating film, and 13 is a lead electrode provided around the emitter 11 with a space therebetween, for example, provided so that the inner diameter becomes 2 μm. 131 is a thermal oxide film provided in the step of forming the emitter, and 132 is an anode plate provided facing the emitter 11. The emitter 11 is formed in a conical shape by etching the silicon substrate 14 and sharpening the radius of curvature at the tip thereof to, for example, 1000 ° or less.

Next, the operation will be described. When a voltage is applied between the silicon substrate 14 and the extraction electrode 13 so that the extraction electrode 13 side is positive, the voltage is applied to the space between the tip of the emitter 11 and the extraction electrode 13. Further, since the tip of the emitter 11 is sharp, the electric field between the tip of the emitter 11 and the extraction electrode 13 is concentrated in a space near the tip of the emitter 11. When the voltage of the extraction electrode 13 is further increased, emission of electrons from the tip of the emitter 11 by the tunnel effect starts. At this time, if a positive voltage is applied to the anode plate 132, the emitted electrons flow to the anode plate 132, and the anode current is observed. By modulating the extraction voltage across the voltage at which the anode current starts to be observed, the electron-emitting device can function as an electron source.

FIG. 17 is a sectional view showing a method of manufacturing the electron-emitting device in the order of steps. In FIG. 17A, a circular pattern 61 made of a SiO2 film is formed on the low-resistance silicon substrate 14 by thermal oxidation, lithography and dry etching. In FIG. 17B, the silicon substrate is subjected to reactive ion etching (hereinafter referred to as RIE) using the circular pattern 61 of the SiO2 film as a mask, and a cone 51 serving as an emitter is formed under the mask 61. Next, a thermal oxide film 131 is formed on the surface of the cone 51 by thermal oxidation as shown in FIG. In this state, as shown in FIG. 17D, the insulating film 12 and the lead electrode 13 are deposited, and thereafter, the mask 61 and the insulating film material and the lead electrode material formed on the mask 61 are lifted off by wet etching, and Thermal oxide film 131
Is removed to obtain the electron-emitting device shown in FIG.

Further, J. J. Vac. Sci. Techno
l. B12 (2), Mar / Apr 1994 p. 66
2-665 and J.M. Vac. Sci. Technol.
B13 (2), Mar / Apr 1995 p. 441
As shown in FIGS. 444 to 444, the tip of the emitter provided on the silicon substrate is formed into a porous shape composed of a collection of fine fibers having a diameter of several tens of degrees by anodization, and the radius of curvature of the tip of the emitter is reduced. A method has been proposed in which the electric field is concentrated by reducing the radius of curvature of the fiber to reduce the magnitude of the extraction voltage at which emission current is observed.

[0006]

In the above-mentioned conventional electron-emitting device, the anode current is observed because the magnitude of the electric field intensity in the space near the tip of the emitter depends on the radius of curvature of the tip of the emitter. The magnitude of the starting extraction voltage is determined by RIE shown in FIG. 17B and FIG.
17 (e) and the processing accuracy in the wet etching shown in FIG. 17 (e). Therefore, if the radius of curvature at the tip of the emitter is reduced, the magnitude of the voltage at which the anode current starts to be observed is reduced. However, if the etching depth of the RIE is increased or the thermal oxide film in the thermal oxidation process is slightly thicker than the ideal value, the height of the emitter is sharply reduced by the sharpened tip, and the concentration of the electric field is deteriorated. Therefore, it is not desirable to reduce the radius of curvature of the emitter to the processing accuracy limit. Therefore, the magnitude of the voltage at which the anode current starts to be observed cannot be reduced too much. For this reason, an expensive high voltage type drive circuit is required as a drive circuit for driving the extraction voltage, and as a result, there is a problem that the price of a device or a vacuum tube using an electron-emitting device becomes high.

Further, in the field emission, electrons are emitted through a potential barrier formed by a work function due to a tunnel effect, and therefore, the work function of an emitter material is a factor that determines emission current characteristics in addition to the above-described electric field. Since the Fermi level of the metal is in the band of the conduction band having a high state density, the Fermi level does not easily change due to impurities, surface states, and the like. This feature can be realized with any good conductor material having a high state density at the Fermi level as well as metal. On the other hand, since silicon as an emitter material is a semiconductor, the Fermi energy is in the band gap, and its level varies depending on impurity levels and surface levels. Therefore, the work function, which is the difference between the vacuum energy level and the Fermi energy, also varies. This variation in work function causes variation in emission current characteristics. Therefore, an electron-emitting device using silicon as an emitter material has disadvantages in that it is difficult to obtain constant characteristics as compared with a metal or a good conductor member, and is likely to vary with time.

Further, since porous silicon has a large surface area, it is very easily reacted with water and oxygen, and easily oxidized even when left in the air or heated in the air. The oxidized porous silicon layer oxide acts to thicken the tunnel barrier and prevent field emission. Furthermore, when the temperature is increased without water or oxygen, the hydrogen bonded on the surface of the porous silicon is desorbed at 400 ° C. or less, and the porous silicon is denatured.
It has the property of degrading when heated to 0 ° C. Therefore, the method of forming porous silicon on the surface of the emitter in order to reduce the extraction voltage is characterized by the deterioration of the characteristics due to assembly, the electron emission element in processes such as glass sealing and baking exhaust when mounted on a display or vacuum tube. However, there is a problem that the electron emission characteristics change when the temperature rises. Furthermore, since porous silicon itself is a semi-insulator, if the thickness of porous silicon formed on the emitter surface is large, emission current cannot be obtained. For this reason, there is also a problem that characteristics are largely varied unless the film thickness is strictly controlled during the anodizing treatment.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and can reduce the driving voltage, reduce the deterioration of the emission current due to storage and assembly processes, and reduce the emission current of the electron-emitting device. It is an object of the present invention to reduce variations and fluctuations in characteristics and to make emission current characteristics not strongly depend on the thickness of porous silicon.

[0010]

According to a method of manufacturing an electron-emitting device according to the present invention, a step of forming a mask made of silicon oxide on a silicon substrate is performed, and etching is performed using the silicon oxide as a mask. Forming a portion, forming a thermal oxide film on the surface of the cone portion, depositing an insulating film on the silicon substrate having the cone portion formed thereon, and forming an extraction electrode on the insulating film. A step of forming an emitter by removing the mask, the insulating film formed on the mask, the extraction electrode and the thermal oxide film formed on the cone by etching, and forming a porous silicon layer on the surface of the emitter. And a step of forming a metal or good conductor member on one or both of the surface and the inside of the porous silicon layer.

A step of forming a mask made of silicon oxide on the silicon substrate; a step of forming an cone using the silicon oxide as a mask to form a cone under the mask; and a step of forming a cone under the mask. Depositing an insulating film on the insulating film, forming a lead electrode on the insulating film, removing the mask, the insulating film and the lead electrode formed on the mask by etching, and forming an emitter. The method includes a step of forming a porous silicon layer on the surface of the emitter, and a step of forming a metal or good conductor member on one or both of the surface and the inside of the porous silicon layer.

[0012] The step of forming a metal or conductor member to the porous silicon layer is a step of vapor deposited metal or conductor member to the porous silicon layer by sputtering.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a sectional view of an electron-emitting device in which a metal is formed on a porous silicon layer. Reference numeral 11 denotes an emitter whose surface is a porous silicon layer, and Ni is formed in the porous silicon layer 15. Reference numeral 12 denotes an insulating film between the silicon substrate 14 and the lead electrode 13. 131 is a thermal oxide film provided in the step of forming the emitter. FIG. 2 is an enlarged schematic view of the surface of the electron-emitting portion of the electron-emitting device according to the present embodiment. 14
Is a silicon substrate, 22 is a sponge-like porous silicon layer, and 23 is Ni formed on the porous silicon layer.

In an electron-emitting device in which only porous silicon is formed, there has been a problem that the porous silicon is oxidized by being left in the air and heated at 200 ° C. in the air, so that an emission current cannot be obtained. However, in the case of the electron-emitting device formed with Ni, the emission current did not stop due to being left in the air or being heated in the air. Moreover, the emission current characteristics of the electron-emitting device formed with Ni did not deteriorate as compared with the electron-emitting device formed of only porous silicon. Further, in an electron-emitting device in which only porous silicon is formed, the emission current cannot be obtained at all when the thickness of the porous silicon is 0.6 μm or more. However, by forming Ni in the porous silicon layer, an emission current can be obtained even when the thickness of the porous silicon is 0.6 μm or more. The above effects are due to Au and P other than Ni.
Similarly, metals such as t and Cr could be obtained. Also,
The Ni formed on the porous silicon layer is not limited to the one formed on the inside of the porous silicon, and the same effect can be obtained by forming Ni on the surface of the porous silicon.

As described above, in the present embodiment, by forming a metal on the porous silicon layer on the emitter surface, it is possible to reduce the extraction voltage at which emission current starts to be observed regardless of the thickness of the porous silicon layer. There is an effect that an electron-emitting device whose characteristics are hardly deteriorated by leaving in the air, heating in the air, baking in a vacuum or the like can be obtained.

Embodiment 2 Hereinafter, a method for manufacturing the electron-emitting device shown in FIG. 1 will be described. First, as shown in FIG. 17, the shape of a field-emission electron-emitting device including a lead electrode 13, an insulating film 12, and an emitter 11 made of silicon was formed using a conventional method. Using the emitter 11 as an anode, Va
c. Sci. Technol. B13 (2), Mar /
Apr 1995 p. Anodizing treatment was performed by the method described in 441 to 444 to form porous silicon on the surface of the emitter 11. That is, the chip 31 in which the electron-emitting device is formed on the partition wall 38 of the electrolytic solution is placed in the anodization cell shown in FIG.
5. An electric current was passed between the platinum cathodes 32. As the electrolytic solution 36, an aqueous solution containing HF, H2O, and C2H5OH was used. The anodization treatment can be performed using either n-type silicon or p-type silicon as the emitter. When the emitter is n-type silicon, the anodization treatment was performed while irradiating the emitter with light using a tungsten lamp 37. Thereby, a porous silicon film was formed on the surface of the emitter. When the emitter was p-type silicon, anodizing treatment was performed without irradiating light using a substrate containing B of 1018 to 1019 cm-3.

Next, while the sample was washed with water in a dark place and not dried, the emitter 11 was exposed to the electrolytic bath of the anode using an electroplating bath shown in FIG. Formed. A Ni electrode was used as the anode 45, a Pt electrode was used as the cathode 42, NiSO 4, N
Ni in the electrolytic solution 46 containing iCl2 and H3BO3
Plating was performed. In the case of n-type silicon, plating was performed while irradiating the exposed portion of silicon on the back surface of the chip 31 with light from the tungsten lamp 37. When the emitter and the substrate were p-type silicon, plating was performed by performing the same treatment without irradiating light.

The Ni distribution of the porous silicon film formed on the silicon wafer on the silicon wafer by the method of the present embodiment was examined by Auger analysis to find that the Ni distribution in the depth direction was the same as that of the porous silicon. It was found that Ni had been distributed, and it was confirmed that metal was present in the porous silicon. Here, the metal to be plated is N
Although i is used, any metal that can be electroplated may be used, for example, Au, Pt, Cr, or the like. In the present embodiment, since metal is formed on the surface of porous silicon by electroplating using silicon having porous silicon formed on the surface as a cathode, a porous layer is formed from the interface between silicon and the porous silicon layer to the surface of the emitter. A continuous metal layer is formed within the porous silicon layer. As a result, even if the porous silicon is oxidized, there is an effect that the current is led to the surface.

Embodiment 3 In the second embodiment, Ni is formed on the porous silicon layer by electroplating. However, Ni can be formed on the porous silicon layer by electroless plating. As in the second embodiment, the electron-emitting device of FIG. 1 was prepared by forming a porous silicon layer on the surface of the emitter 11. Thereafter, the electron-emitting device was immersed in a SnCl2 aqueous solution to form Sn nuclei in the porous silicon layer. After washing with water, PdCl2
It was immersed in an aqueous solution to change Sn nuclei into Pd nuclei. And immersed in an aqueous solution of NiSO4 heated to 95 ° C.
Was deposited on the surface of the porous silicon film. The same effect as in the second embodiment was confirmed in the electron-emitting device manufactured by this method.

Embodiment 4 FIG. 5 is a cross-sectional view of an electron-emitting device including a frustoconical emitter. In the figure, reference numeral 11 denotes a truncated cone-shaped emitter obtained by etching an n-type silicon substrate 14, a porous silicon layer 15 having a thickness of 0.1 μm formed on the surface by anodizing treatment in the same manner as in the second embodiment, and further plating. Is formed on the porous silicon layer 15 by Ni. The upper surface of the emitter was a circle of about 0.2 to 0.5 μm. The opening diameter of the extraction electrode was set to 2 μm.

Before Ni is formed on the porous silicon layer, a structure composed of a truncated cone-shaped emitter 11, an insulating film 12, and a lead electrode film 13 was prepared by the method shown in FIG. That is, (a) a circular mask 61 made of SiO2 is formed on the n-type silicon substrate 14, (b) a cone 51 is formed under the mask by performing reactive ion etching, and (c) the insulating film 12 and the lead-out are formed. Electrode 13 is deposited,
(D) Mask 61 and mask 6 by wet etching
The insulating film 12 and the extraction electrode 13 formed on the substrate 1 are removed to form a frustoconical emitter 11 made of n-type silicon.
To form (E) Thereafter, the surface of the emitter was subjected to anodizing treatment to form a porous silicon layer 15. Thereafter, Ni was formed on the porous silicon layer 15 by the plating method described in the second or third embodiment.

Also in the electron-emitting device according to the present embodiment, it was confirmed that the change in emission current due to leaving in the air, heating in the air, and baking in a vacuum was smaller than that of the electron-emitting device in which only porous silicon was formed. . Furthermore, the electron-emitting device according to the present embodiment can be manufactured at a low cost because the number of manufacturing steps is smaller than that of the example of the first embodiment, and the shape can be controlled more easily than when a cone-shaped emitter is manufactured. This has the effect of reducing variations in emission current characteristics caused by the above. In the above process, the shape of the emitter is a truncated cone, but the same effect can be obtained with an emitter having a polygonal cylindrical or SiO2 mask 61 and a polygonal surface.

Related Technical Examples FIG. 7 shows a cross-sectional view of an electron-emitting device of Related Art Example 1 . In the figure, 12 is an insulating film, 13 is a lead electrode, 14 is a silicon substrate, and 15 is a second embodiment on a silicon substrate 14.
This is an emitter in which a metal is formed on a porous silicon layer that has been subjected to anodizing treatment by the method described above. FIG. 8 shows a method of manufacturing the field emission device shown in FIG. (A) n-type silicon substrate 14
An insulating film 12 is formed thereon by a CVD method, and a lead electrode 13 is formed by a sputtering method. (B) The emitter 1 is formed by photolithography and reactive ion etching.
The extraction electrode 13 and the insulating film 12 in the portion where 1 is to be formed are etched. (C) The exposed surface of the silicon substrate was subjected to anodization treatment to form an emitter composed of the porous silicon layer 15. Further, Embodiment 2 or Embodiment 3
Ni was formed on the porous silicon layer 15 by the plating method shown in FIG.

This electron-emitting device has an effect that it can be manufactured by a very simple process as described above. In addition, there is an effect that the quality is stabilized because there is no etching process in which process variations are likely to occur. Also in the electron-emitting device according to Related Art Example 1, it was confirmed that the change in the emission current due to leaving in the air, heating in the air, and baking in a vacuum was smaller than that of the electron-emitting device in which only porous silicon was formed.

Related technical example 2. FIG. 9 is a cross-sectional view of an electron-emitting device of Related Art Example 2 . 1
Reference numeral 1 denotes an emitter having a projection 91 formed on the surface. Reference numeral 12 denotes an insulating film between the silicon substrate 14 and the lead electrode 13. Hereinafter, a method for manufacturing the electron-emitting device of Related Art Example 2 shown in FIG. 9 will be described. As in the second embodiment, the extraction electrode 13 and the insulating film 1 are formed by the method described in the conventional example shown in FIG.
2. After forming the shape of the field emission type electron-emitting device having the emitter 11 made of silicon, the emitter 11 is used as an anode and subjected to anodization treatment in the same manner as in the second embodiment. A layer was formed. Thereafter, the etching solution HF: HNO3: CH3 COOH:
The interface between the porous silicon and the silicon substrate 14 was exposed by removing only the porous silicon having a high etching rate by H2O = 1: 7: 17: 250. FIG. 10 is an enlarged schematic view of the surface of the emitter 11 of the electron-emitting device shown in FIG. 9 formed in this manner. In FIG. 10, reference numeral 11 denotes an emitter made of silicon, and reference numeral 91 denotes a projection made of silicon which appears after removing a sponge-like portion of porous silicon. Reference numeral 92 denotes a recess formed by removing the porous silicon.

In the electron-emitting device of Related Art Example 2 , since the emitter is formed of silicon, it is left in the air, heated at the time of die bonding of the chip, and subjected to vacuum in the case of an electron-emitting device formed of porous silicon. The characteristic deterioration by baking became difficult to occur. Further, removal of the porous silicon after the formation of the porous silicon, 10
As shown in (1), the surface of the emitter remains rough and the tip of the emitter is sharpened, so that the emission current is larger than that of the electron-emitting device before the porous silicon is formed.

Accordingly, in Related Art Example 2 , the extraction voltage at which the emission current starts to be observed can be made lower than in the electron-emitting device before the porous silicon is formed, and the atmospheric air observed in the electron-emitting device formed with the porous silicon can be reduced. There is an effect that characteristics deterioration due to standing in the middle, heating at the time of die bonding of the chip, and baking in a vacuum hardly occurs.

Related Technical Example 3 FIG. 11 shows an electron-emitting device of Related Art Example 3 . In the figure, 11 is an emitter, 14 is a silicon substrate, 12 is an insulating film, and 13 is an extraction electrode. Reference numeral 91 denotes a projection formed by exposing the interface between the porous silicon and the silicon substrate 14. Reference numeral 92 denotes a depression formed by removing the porous silicon. Further, an electron-emitting device having a structure as shown in FIG. 12 can be manufactured only by changing the conditions of the anodizing treatment by almost the same manufacturing method.

FIG. 13 shows a method of manufacturing the electron-emitting device of Related Art Example 3 . (A) shows an emitter 11, an insulating film 12, and a frustoconical silicon made in the same manner as in the fourth embodiment.
In this example, a structure including the extraction electrode 13 is created.
Next, a porous silicon layer 15 is formed on the emitter 11 as shown in FIG. At this time, a projecting shape 91 is formed at the interface between the porous silicon and the silicon substrate 14 as shown in the figure. (C) shows a state in which the formed porous silicon layer 15 is removed by etching as shown in Related Art Example 2 . Although the porous silicon is removed, an interface structure having random protrusions 91 appears instead.

In the electron-emitting device of Related Art Example 3, since the emitter is silicon, the electron-emitting device formed with porous silicon is left in the air, heated at the time of die bonding of the chip, and baked in a vacuum. The characteristic deterioration due to is less likely to occur. On the other hand, a projection structure at the interface appeared on the surface of the emitter made of silicon, and this became an electron emission point, so that an emission current could be obtained. Further, a structure as shown in FIG. 12 in which the film thickness of the anodizing treatment was increased and the protrusions were enlarged by setting appropriate conditions of the anodizing treatment could be produced. In this structure, a high electric field was obtained at the tip of the projection even at the same extraction voltage, and electrons could be emitted at a low voltage.

Related Technical Example 4 FIG. 14 shows an electron-emitting device of Related Art Example 4 . In the figure, 11 is an emitter, 14 is a silicon substrate, 12 is an insulating film, and 13 is an extraction electrode. Reference numeral 91 denotes a projection formed by exposing the interface between the porous silicon and the silicon substrate 14. Further, a structure as shown in FIG. 15 can be manufactured by changing the conditions of the anodizing treatment by almost the same manufacturing method. In the electron-emitting device of Related Art Example 4, a planar emitter 11 having a surface made of porous silicon is formed in the same manner as in Related Art Example 1 . At this time, a protruding shape is formed at the interface. Thereafter, the interface between the porous silicon and the silicon substrate 14 is exposed, except for the porous silicon layer formed by etching in the same manner as in Related Art Example 3 .

Also in the electron-emitting device of Related Art Example 4, since the emitter is silicon, the electron-emitting device formed with porous silicon is left in the air, heated at the time of die bonding of the chip, and baked in a vacuum. The characteristic deterioration due to is less likely to occur. On the other hand, a large number of projection structures at the interface appeared on the surface of the emitter made of silicon, and these became the electron emission points, so that an emission current could be obtained. Also,
The structure of Related Art Example 4 can be manufactured inexpensively with few steps.

Related Technical Example 5 The surface of the electron-emitting device obtained in the related art examples 2 , 3 , and 4 was formed by electroplating in the same manner as in the second embodiment.
A Ni film of 形成 was formed. In the electron-emitting device prepared in this manner, the variation in emission current was small, and the change in characteristics due to baking in vacuum was small. Also, related techniques
In the case of the operation example 5 , Ni was used, but the same effect was obtained with a metal such as Au, Pt, and Cr. Further, in Related Technical Example 5 ,
Although the plating is performed by the electroplating method described in the second embodiment, the electroless plating method described in the third embodiment may be used instead of the electroplating method. Further, by ion beam sputtering described in the fifth embodiment, W, T
The same effect can be obtained by forming a good conductor member such as iN or Pt.

Embodiment 5 A method for forming a metal or good conductor member on a porous silicon layer by a method different from the plating method described in the second or third embodiment will be described. First, the extraction electrode 13,
The shape of the field-emission electron-emitting device shown in FIG. 1 having the insulating film 12 and the emitter 11 made of silicon was prepared. Then, as in the second embodiment, a porous silicon layer was formed on the surface of the emitter 11 by anodizing treatment. Thereafter, a good conductor member film of about 100 ° W was formed on the surface of the electron-emitting device by ion beam sputtering. However, immediately before the ion beam sputtering, the surface of the emitter is sputter-etched by about several millimeters.

Thereafter, the emitter 11 and the extraction electrode 13
When the insulation characteristics between the films were examined, there was almost no change from before the film formation. Thereafter, the electron-emitting device was annealed at 450 ° C. for 30 minutes in a vacuum. The emission current of the electron-emitting device thus prepared was not lost even when the device was left in the air for about one week or the characteristics were measured after die bonding. In addition, the characteristics did not deteriorate even when baked in a vacuum. Further, the change with time of the emission current in vacuum was smaller and more stable than that of the electron-emitting device using only silicon as the emitter. Similar effects can be obtained with TiN or Pt as well as W as the metal or good conductor member to be coated. Furthermore, the method of the present embodiment
The present invention can also be applied to the case where a metal is formed on a porous silicon layer by using the second or third embodiment.

In this embodiment, after an emitter having porous silicon is formed, a metal or a good conductor member is formed on the surface of the emitter by an ion beam sputtering method, thereby impairing the insulation characteristics between the extraction electrode and the emitter. And a thin metal or good conductor film can be formed on the surface of the emitter, so that the obtained electron-emitting device has the effect of hardly deteriorating its characteristics due to standing in the air, heating in the air, baking in a vacuum, and the like. . Furthermore, in this embodiment, after forming an emitter having porous silicon, a metal or a good conductor member is formed on the surface of the emitter by an ion beam sputtering method, so that a good conductor member such as W or TiN which is difficult to form by a plating method is used. Since the emitter can be formed, deterioration of characteristics due to leaving the emitter in the air, heating in the air, and baking in a vacuum is less likely to occur, and the effect that the emission current changes with time is smaller than that of silicon.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of Embodiment 1 of the present invention.

FIG. 2 is an enlarged schematic diagram of the emitter surface of FIG. 1;

FIG. 3 is a sectional view showing an electrolytic cell according to Embodiment 2 of the present invention.

FIG. 4 is a sectional view showing an electrolytic cell according to Embodiment 2 of the present invention.

FIG. 5 is a cross-sectional view illustrating an example of Embodiment 4 of the present invention.

FIG. 6 is a diagram illustrating a manufacturing process according to a fourth embodiment of the present invention.

FIG. 7 is a cross-sectional view showing an example of Related Art Example 1 .

FIG. 8 is a diagram showing a manufacturing process of Related Art Example 1 .

FIG. 9 is a cross-sectional view illustrating an example of Related Art Example 2 .

FIG. 10 is an enlarged schematic view of the emitter surface of FIG. 9;

FIG. 11 is a cross-sectional view showing an example of Related Art Example 3 .

FIG. 12 is a cross-sectional view showing an example of Related Art Example 3 .

FIG. 13 is a view illustrating a manufacturing method of Related Art Example 3 ;

FIG. 14 is a sectional view showing an example of Related Art Example 4 .

FIG. 15 is a cross-sectional view showing an example of Related Art Example 4 .

FIG. 16 is a sectional view showing a conventional electron-emitting device.

FIG. 17 is a cross-sectional view illustrating a method for manufacturing a conventional electron-emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 Emitter 12 Insulating film 13 Extraction electrode 14 Silicon substrate 15 Porous silicon layer 31 Silicon chip on which electron-emitting device was formed 32 Cathode 33 Constant current source 35 Anode 36 Electrolyte 37 Light source 38 Partition wall 42 Cathode 45 Anode 46 Electrolyte 51 Conical cone 51 Silicon (cone) 61 Oxide film mask 91 Protrusion formed at interface between porous silicon layer and silicon substrate 92 Depression after removing porous silicon 131 Thermal oxide film 132 Anode plate

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroshi Harada 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Inside Mitsubishi Electric Corporation (72) Inventor Masaru Kinugawa 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Inside Electric Co., Ltd. (72) Inventor Tomoyo Shono 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Co., Ltd. (56) References JP-A-7-335116 (JP, A) JP-A-6-44893 (JP, A) Special Table Hei 7-509803 (JP, A) (58) Fields surveyed (Int. Cl. ⁷ , DB name) H01J 9/02

Claims (3)

(57) [Claims] A step of forming a mask made of silicon oxide on a silicon substrate; a step of performing etching using the silicon oxide as a mask to form a cone under the mask; and a thermal oxide film on a surface of the cone. Forming an insulating film on the silicon substrate on which the cone portion is formed, forming an extraction electrode on the insulating film, and forming the mask and the film formed on the mask. Removing the insulating film, the extraction electrode and the thermal oxide film formed on the cone portion by etching to form an emitter, forming a porous silicon layer on the surface of the emitter, Forming a metal or good conductor member on one or both of the surface and the inside of the silicon layer. 2. A step of forming a mask made of silicon oxide on a silicon substrate; a step of performing etching using the silicon oxide as a mask to form a cone under the mask; and a step of forming the cone on the silicon substrate. A step of depositing an insulating film thereon, a step of forming a lead electrode on the insulating film, and forming the emitter by removing the mask and the insulating film and the lead electrode formed on the mask by etching. And forming a porous silicon layer on the surface of the emitter, and forming a metal or good conductor member on one or both of the surface and the inside of the porous silicon layer. Of manufacturing an electron-emitting device. 3. A process for forming a metal or conductor member to the porous silicon layer according to claim 1 or claim, characterized in that the sputtering is a process of depositing form metal or conductor member to the porous silicon layer 3. The method for manufacturing an electron-emitting device according to item 2 .