JP3415435B2 - Processing device and processing method - Google Patents
Processing device and processing methodInfo
- Publication number
- JP3415435B2 JP3415435B2 JP10869598A JP10869598A JP3415435B2 JP 3415435 B2 JP3415435 B2 JP 3415435B2 JP 10869598 A JP10869598 A JP 10869598A JP 10869598 A JP10869598 A JP 10869598A JP 3415435 B2 JP3415435 B2 JP 3415435B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- contact pressure
- container
- processing body
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012545 processing Methods 0.000 title claims description 210
- 238000003672 processing method Methods 0.000 title claims description 8
- 238000004140 cleaning Methods 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 44
- 238000005259 measurement Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 21
- 238000005192 partition Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 82
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 22
- 238000004381 surface treatment Methods 0.000 description 13
- 238000000746 purification Methods 0.000 description 8
- 238000005201 scrubbing Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 210000000050 mohair Anatomy 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は，例えば半導体ウ
ェハやＬＣＤ用ガラス板等の基板を処理する処理装置及
び処理方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus and a processing method for processing a substrate such as a semiconductor wafer or a glass plate for LCD.
【０００２】[0002]
【従来の技術】一般に，半導体デバイスの製造工程にお
いては，例えば半導体ウェハ（以下，「ウェハ」とい
う。）の表面に付着したパーティクル，有機汚染物，金
属不純物等のコンタミネーションを除去するために洗浄
処理システムが使用されている。その中の一つとして枚
葉式の洗浄処理システムには，一般にスピン型の処理装
置が備えられている。2. Description of the Related Art Generally, in a semiconductor device manufacturing process, for example, cleaning is performed to remove contaminants such as particles, organic contaminants, and metal impurities attached to the surface of a semiconductor wafer (hereinafter referred to as "wafer"). The processing system is in use. As one of them, a single-wafer cleaning processing system is generally equipped with a spin type processing device.
【０００３】この処理装置には，ウェハの表面に付着し
たパーティクルを効果的に除去するために，いわゆるス
クラブ洗浄処理を行うものが知られている。このスクラ
ブ洗浄処理は，スピンチャックによって保持されたウェ
ハの表面に，ブラシやスポンジ等の部材を下面に備えた
処理体を回転させながら接触させ，ウェハの表面に付着
したパーティクル等をこすり落とすものである。従来の
処理装置は，昇降及び回動自在なアーム部材を備え，こ
のアーム部材の先端部に，エアシリンダを設けている。
このエアシリンダの下方に，昇降及び回転自在なシャフ
トを配置し，このシャフトの下端部に処理体を取り付け
ている。This processing apparatus is known to perform a so-called scrub cleaning process in order to effectively remove particles adhering to the surface of a wafer. In this scrub cleaning process, the surface of the wafer held by the spin chuck is brought into contact with the surface of the wafer such as a brush or sponge while rotating the processing object, and the particles adhering to the surface of the wafer are scraped off. is there. A conventional processing device includes an arm member that can be raised and lowered and rotated, and an air cylinder is provided at the tip of this arm member.
A shaft that can be raised and lowered and rotated is disposed below the air cylinder, and a processing body is attached to the lower end of the shaft.
【０００４】そして，エアシリンダの昇降稼働によっ
て，シャフトに上下方向の推力を付与し，この推力が処
理体に働き，処理体がウェハの表面を押圧する構成にな
っている。処理体に働く推力と処理体自身の自重との総
和が，処理体によって実際にウェハの表面に加わる接触
圧（単位面積当たりの圧力）となる。ここで，シャフト
の推力が過大になり処理体の接触圧が許容範囲以上にな
れば，ウェハの表面に損傷を与えてしまう。これを回避
するため，アーム部材には，シャフトの推力を感知する
重量センサが設けられている。そして，この重量センサ
によって得られたデータに基づいて，エアシリンダの昇
降稼働を自動的に制御し，これに伴いシャフトの推力を
調整して処理体の接触圧を制御する構成になっている。The vertical movement of the air cylinder gives a vertical thrust to the shaft, and this thrust acts on the processing body, and the processing body presses the surface of the wafer. The sum of the thrust acting on the processing body and the weight of the processing body itself is the contact pressure (pressure per unit area) actually applied to the surface of the wafer by the processing body. Here, if the thrust of the shaft becomes excessive and the contact pressure of the processing object exceeds the allowable range, the surface of the wafer will be damaged. In order to avoid this, the arm member is provided with a weight sensor that detects the thrust of the shaft. Then, based on the data obtained by the weight sensor, the up-and-down operation of the air cylinder is automatically controlled, and accordingly, the thrust of the shaft is adjusted to control the contact pressure of the processing body.
【０００５】ところで，従来の処理装置において，重量
センサは，シャフトの推力を感知するものの，処理体の
接触圧を直接感知できない。このため，例えば，シャフ
トに外乱要素（軸受との摺動抵抗やシャフトを回転させ
る回転力等）が加わり，処理体によって実際にウェハの
表面に加わる接触圧が，当初の所定の接触圧から変動し
ても，重量センサは感知することができない。In the conventional processing apparatus, the weight sensor detects the thrust of the shaft, but cannot directly detect the contact pressure of the processing body. Therefore, for example, a disturbance element (sliding resistance with the bearing, rotational force for rotating the shaft, etc.) is applied to the shaft, and the contact pressure actually applied to the surface of the wafer by the processing body fluctuates from the initial predetermined contact pressure. However, the weight sensor cannot detect it.
【０００６】そこで，特開平８−２６７０２３号等に開
示されている処理装置では，回転軸に取り外し可能に装
着された載置台から成るスピンチャックによってウェハ
を保持するように構成されている。そして，実際にウェ
ハの表面に加わる接触圧を測定する際には，回転軸から
載置台を取り外し，代わりに処理体の接触圧を感知する
センサ部を回転軸に設けるようになっている。こうし
て，センサ部を回転軸に設けて，ウェハＷの表面に処理
体を接触させる時と同様に処理体をセンサ部に接触させ
れば，処理体の接触圧をセンサ部が感知することができ
る。Therefore, in the processing apparatus disclosed in Japanese Patent Laid-Open No. 8-267023, a wafer is held by a spin chuck composed of a mounting table detachably mounted on a rotating shaft. When actually measuring the contact pressure applied to the surface of the wafer, the mounting table is removed from the rotating shaft, and a sensor unit for detecting the contact pressure of the processing body is provided on the rotating shaft instead. Thus, by providing the sensor unit on the rotating shaft and bringing the processing body into contact with the sensor unit in the same manner as when bringing the processing unit into contact with the surface of the wafer W, the sensor unit can detect the contact pressure of the processing unit. .
【０００７】[0007]
【発明が解決しようとする課題】しかしながら，特開平
８−２６７０２３号等に開示されている処理装置では，
処理体の接触圧を測定するために，センサ部の取付作業
を行わなければならず，例えば，２５枚分のウェハを一
枚ずつ連続して洗浄処理する際には，その途中で，ウェ
ハの表面に加わる接触圧が本当に所定の値に成っている
か否かを，確認することができない。また，連続洗浄処
理中に測定を行えば，一旦，これを中断しなければなら
ず，スループットの著しい低下を招く。そして，センサ
部の取付作業自体も，手間がかかる。However, in the processing apparatus disclosed in JP-A-8-267023,
In order to measure the contact pressure of the processing body, it is necessary to attach the sensor unit. For example, when 25 wafers are continuously cleaned one by one, the wafer is It is not possible to confirm whether the contact pressure applied to the surface really reaches the specified value. Further, if the measurement is performed during the continuous cleaning process, it must be interrupted once, which causes a significant decrease in throughput. Further, the work of mounting the sensor unit itself is troublesome.
【０００８】さらに，半導体デバイスの高集積化に伴
い，より精密な接触圧の制御が要求されている。しかし
ながら，このような従来の処理装置では，洗浄処理中に
接触圧を測定し，これに基づいてシャフトの推力を調整
して処理体の接触圧を精密に制御することが困難である
ため，洗浄処理の信頼性を低下させるおそれがある。Further, with the high integration of semiconductor devices, more precise control of contact pressure is required. However, in such a conventional processing apparatus, it is difficult to precisely measure the contact pressure of the processing object by measuring the contact pressure during the cleaning processing and adjusting the thrust of the shaft based on this. This may reduce the reliability of processing.
【０００９】従って，本発明の目的は，適宜かつ簡易
に，処理中における処理体の接触圧のデータを正確に得
ることができる処理装置及び処理方法を提供することに
ある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a processing apparatus and a processing method that can obtain the data of the contact pressure of the processing body during the processing appropriately and easily.
【００１０】[0010]
【課題を解決するための手段】以上の課題を解決するた
めに，本発明にあっては，保持手段によって保持された
基板の表面に処理体を接触させて処理する処理装置にお
いて，前記処理体を基板の表面から離れた退避位置に退
避自在に構成し，前記退避位置に，処理体の接触圧を測
定する収容器と，処理体を浄化する収容器を隣接して設
け，前記処理体の接触圧を測定する収容器に押圧センサ
を設け，前記処理体を浄化する収容器に浄化液を吐出す
る吐出機構を設けたことを特徴とする。In order to solve the above problems, according to the present invention, in a processing apparatus for processing a treatment object by bringing the treatment object into contact with the surface of a substrate held by a holding means, Is configured to be retractable to a retracted position away from the surface of the substrate, and the contact pressure of the processing body is measured at the retracted position.
And a container for purifying the treatment body are installed adjacent to each other.
A pressure sensor is attached to the container for measuring the contact pressure of the processing body.
Is provided, and the purification liquid is discharged into a container for purifying the processing body.
It is characterized in that a discharge mechanism is provided.
【００１１】この処理装置によれば，例えば複数枚の基
板を連続処理する場合には，前の基板の処理が終了した
後に，処理体を退避位置に退避させる。そして，基板の
表面に加わる接触圧が正常か否かを確認するために，測
定手段を用いて処理体の接触圧を直接測定する。測定の
結果，接触圧が正常であれば次の基板を処理する。そし
て，許容範囲を越えた接触圧の異常が発見されるまで連
続処理を継続させる。こうして，接触圧を適宜に確認で
きるので，連続処理を中断させることがない。また，測
定中に接触圧のずれが感知されれば，自動調整し，再び
所定の接触圧を得るようにしてもよい。また，退避位置
に予め測定手段を設けているので，測定の準備にかかる
手間がなくなり，接触圧を簡易に測定できる。また，処
理体を浄化することができる。また，接触圧の測定から
処理体の浄化への移行が早い。 この処理装置において，
前記保持手段によって保持された基板に処理液を供給す
る供給手段を設け，前記処理体の接触圧を測定する収容
器に，処理している時と同じ状況を再現させるように処
理液を供給する処理液吐出機構を設けることが好まし
い。また，前記処理体の接触圧を測定する収容器と，前
記処理体を浄化する収容器は，例えば仕切壁によって区
画されている。前記仕切壁の下方には，前記処理体の接
触圧を測定する収容器と前記処理体を浄化する収容器を
連通させる連通口が形成されていても良い。また，前記
処理体を浄化する収容器の底部には排液孔が形成されて
いても良い。 また，本発明にあっては，保持手段によっ
て保持された基板の表面に処理体を接触させて処理する
処理装置において，処理体を昇降させるエアシリンダを
設け，前記処理体を基板の表面から離れた退避位置に退
避自在に構成し，前記退避位置に退避した処理体の接触
圧を測定する測定手段と，その測定結果が入力される制
御部を設け，前記制御部は，前記エアシリンダの稼動を
制御して，処理体の接触圧を調整することを特徴とす
る。 この処理装置において，前記エアシリンダの押圧力
を測定する重量センサを設け，前記制御部は，処理体の
接触圧が所定の設定値に調整された場合の，重量センサ
による測定データを記憶しておき，その記憶された測定
データと，洗浄中に 重量センサで測定される測定データ
を比較することにより，処理体の接触圧を調整するもの
であっても良い。 According to this processing apparatus, for example, when a plurality of substrates are continuously processed, the processing body is retreated to the retreat position after the processing of the previous substrate is completed. Then, in order to confirm whether or not the contact pressure applied to the surface of the substrate is normal, the contact pressure of the processing body is directly measured using the measuring means. If the contact pressure is normal as a result of the measurement, the next substrate is processed. Then, the continuous processing is continued until an abnormal contact pressure exceeding the allowable range is found. In this way, the contact pressure can be confirmed appropriately, so that continuous processing is not interrupted. Further, if a deviation of the contact pressure is detected during the measurement, it may be automatically adjusted and the predetermined contact pressure may be obtained again. Further, since the measuring means is provided in advance at the retracted position, the time and effort required for the preparation for measurement are eliminated, and the contact pressure can be measured easily. In addition,
It can purify the physical body. Also, from the measurement of contact pressure
The transition to purification of the processing body is quick. In this processor,
The processing liquid is supplied to the substrate held by the holding means.
An accommodating means for measuring the contact pressure of the processing body by providing a supply means
The vessel to reproduce the same situation as when it was being processed.
It is preferable to provide a processing liquid discharge mechanism for supplying a processing liquid.
Yes. In addition, a container for measuring the contact pressure of the processing body,
The container for purifying the processing body is divided by a partition wall, for example.
It is drawn. Below the partition wall, contact of the processing body is made.
A container for measuring the contact pressure and a container for cleaning the processing body are provided.
A communication port for communication may be formed. Also, the above
A drainage hole is formed at the bottom of the container that purifies the treatment body.
You may stay. In the present invention, the holding means
Processing is performed by bringing the processing body into contact with the surface of the substrate held by
In the processing equipment, an air cylinder that raises and lowers the processing object
And to retreat the processing body to a retracted position away from the surface of the substrate.
Contact of the processing body that is configured to be retractable and retracted to the retracted position
Measuring means for measuring pressure and control of inputting the measurement result
A control unit is provided, and the control unit controls the operation of the air cylinder.
It is characterized by controlling and adjusting the contact pressure of the processing body.
It In this processing device, the pressing force of the air cylinder
Is provided with a weight sensor for measuring the
Weight sensor when the contact pressure is adjusted to a preset value
Measurement data is stored in advance and the stored measurement is performed.
Data and measurement data measured by the weight sensor during cleaning
That adjusts the contact pressure of the processing body by comparing
May be
【００１２】なお，前記測定手段は，前記処理体を載置
する台座と，前記台座にかかる接触圧を感知することに
より処理体の接触圧を測定する測定機構とを備えている
ことが好ましい。かかる構成によれば，台座に処理体を
載置させ，台座にかかる接触圧を測定機構によって測定
する。台座にかかる接触圧は，処理体の接触圧とみなす
ことができる。[0012] Incidentally, the measuring means preferably comprises a pedestal for placing the treated, and a measuring mechanism for measuring the contact pressure of the processing member by sensing a contact pressure applied to the pedestal. With this configuration, the processing body is placed on the pedestal, and the contact pressure applied to the pedestal is measured by the measuring mechanism. The contact pressure applied to the pedestal can be regarded as the contact pressure of the processing body.
【００１３】この場合，前記台座の載置面の高さが，前
記保持手段に保持された基板の表面の高さと等しくする
のがよい。かかる構成によれば，台座の載置面を基板の
表面と見立て，保持手段によって保持された基板の表面
の高さと等しい高さに台座の載置面を設定する。これに
より，処理中において実際に基板の表面に処理体が接触
する際の状況を，忠実に再現できる。従って，処理中に
接触圧を直接に測定しなくても，台座によって接触圧を
測定すれば，処理中における処理体の接触圧のデータを
正確に得ることができる。In this case, it is preferable that the height of the mounting surface of the pedestal is equal to the height of the surface of the substrate held by the holding means. With this configuration, the mounting surface of the pedestal is regarded as the surface of the substrate, and the mounting surface of the pedestal is set to a height equal to the height of the surface of the substrate held by the holding means. This makes it possible to faithfully reproduce the situation in which the processing body actually contacts the surface of the substrate during processing. Therefore, even if the contact pressure is not directly measured during the processing, the contact pressure data of the processing body during the processing can be accurately obtained by measuring the contact pressure with the pedestal.
【００１４】また，前記保持手段によって保持された基
板に処理液を供給する供給手段を設け，前記測定手段に
処理液を吐出する処理液吐出機構を設けるのがよい。か
かる構成によれば，処理の効果を向上させるために，処
理中では供給手段から処理液を基板に供給している。こ
れに対応して，接触圧の測定中では処理液吐出機構から
純水を吐出させて供給手段の役割を代替させる。従っ
て，処理中の状況を忠実に再現でき，処理中における処
理体の接触圧のデータを正確に得ることができる。ま
た，処理液が純水等の液体であれば，このような処理液
を測定中の処理体にも吐出し，処理体を浄化するのがよ
い。Further , it is preferable that a supply means for supplying a processing liquid to the substrate held by the holding means is provided, and a processing liquid discharging mechanism for discharging the processing liquid is provided to the measuring means. According to this structure, in order to improve the effect of the treatment, the treatment liquid is supplied to the substrate from the supply means during the treatment. Correspondingly, pure water is discharged from the treatment liquid discharge mechanism during the measurement of the contact pressure to substitute the role of the supply means. Obey
Thus, the situation during processing can be faithfully reproduced and the contact pressure data of the processing object during processing can be accurately obtained. Further, if the treatment liquid is a liquid such as pure water, it is preferable to discharge such treatment liquid to the treatment object under measurement to purify the treatment object.
【００１５】[0015]
【００１６】また，本発明にあっては，保持手段によっ
て保持された基板の表面に処理体を接触させて処理する
処理方法において，基板の処理の間に，および／または
前記保持手段によって保持された処理後の基板を搬出し
前記保持手段に次の処理前の基板を保持させるまでの間
に，前記処理体を基板の上方から退避させて処理体の接
触圧を測定し，前記処理体を昇降させるエアシリンダの
稼動を制御して，処理体の接触圧を調整することを特徴
とする。この処理方法において，前記エアシリンダの押
圧力を測定する重量センサを設け，前記処理体の接触圧
が所定の設定値に調整された場合の，重量センサによる
測定データを記憶しておき，その記憶された測定データ
と，洗浄中に重量センサで測定される測定データを比較
することにより，前記エアシリンダの稼動を制御し，処
理体の接触圧を調整するするようにしても良い。 According to the present invention, the holding means
Processing is performed by bringing the processing body into contact with the surface of the substrate held by
In the processing method, during the processing of the substrate, and / or
Unloading the processed substrate held by the holding means
Until the holding means holds the substrate before the next processing
Then, the processing body is retracted from above the substrate and the processing body is contacted.
The air cylinder that measures the contact pressure and raises and lowers the processing body
It is characterized by controlling the operation and adjusting the contact pressure of the processing body . In this processing method, the air cylinder is pushed
A weight sensor for measuring the pressure is provided, and the contact pressure of the processing body is
When the weight is adjusted to the preset value,
Measurement data is stored in advance, and the stored measurement data is stored.
And the measurement data measured by the weight sensor during cleaning
By controlling the operation of the air cylinder,
The contact pressure of the physical body may be adjusted.
【００１７】かかる方法によれば，例えば複数枚の基板
を連続処理する場合には，接触圧を適宜に確認できるの
で，連続処理を中断することがない。According to such a method, for example, when a plurality of substrates are continuously processed, the contact pressure can be appropriately confirmed, so that the continuous processing is not interrupted.
【００１８】また，基板の処理の間に，および／または
前記保持手段によって保持された前の処理後の基板を搬
出し前記保持手段に次の処理前の基板を保持させるまで
の間に，処理体を基板の上方から退避させて清浄にする
ことが好ましい。かかる方法によれば，例えば複数枚の
基板を連続処理する場合には，連続処理を中断すること
なく，処理体を浄化することができる。Further, during the processing of the substrate and / or before the substrate after the previous processing held by the holding means is carried out and the substrate before the next processing is held by the holding means, the processing is performed. It is preferable to clean the body by retracting it from above the substrate. According to this method, for example, when a plurality of substrates are continuously processed, the processing object can be purified without interrupting the continuous processing.
【００１９】[0019]
【発明の実施の形態】以下，本発明の好ましい実施の形
態を，基板の一例としてウェハの表面を洗浄処理するよ
うに構成された表面処理装置に基づいて説明する。図１
は，本実施の形態にかかる表面処理装置７を組み込んだ
洗浄処理システム１の斜視図である。洗浄処理システム
１は，キャリアＣ単位でウェハを搬入し，ウェハを一枚
ずつ洗浄，乾燥を行い，キャリア単位でウェハを搬出す
るように構成されている。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a preferred embodiment of the present invention will be described on the basis of a surface processing apparatus configured to clean a surface of a wafer as an example of a substrate. Figure 1
FIG. 1 is a perspective view of a cleaning processing system 1 incorporating a surface processing device 7 according to this embodiment. The cleaning processing system 1 is configured to carry in wafers in carrier C units, clean and dry the wafers one by one, and carry out wafers in carrier units.
【００２０】この洗浄処理システム１には，ウェハＷを
収納したキャリアＣを４個分載置できる載置部２が設け
られている。洗浄処理システム１の中央には，載置部２
に載置されたキャリアＣから処理工程前のウェハＷを一
枚ずつ取り出し，また，処理工程後のウェハＷをキャリ
アＣに収納する取出収納アーム３が配置されている。こ
の取出収納アーム３の背部には，取出収納アーム３との
間でウェハＷの授受を行い搬送機構である搬送アーム４
が待機している。搬送アーム４は，洗浄処理システム１
の中央に設けられた搬送路６に沿って移動可能に設けら
れている。搬送路６の両側には，各種の処理装置が配置
されている。具体的には，搬送路６の一方の側方には，
例えばウェハＷの表面を洗浄するための表面処理装置７
と，ウェハＷの裏面を洗浄するための裏面処理装置８と
が並んで配置されている。また，搬送路６の他方の側方
には，加熱装置９が４基積み重ねて設けられている。こ
の加熱装置９は，ウェハＷを加熱して乾燥させるための
手段である。この加熱装置９に隣接して２基のウェハ反
転装置１０が積み重ねて設けられている。The cleaning system 1 is provided with a mounting portion 2 on which four carriers C containing wafers W can be mounted. In the center of the cleaning processing system 1, a mounting section 2 is provided.
A take-out storing arm 3 for taking out the wafers W before the processing process one by one from the carrier C placed on the substrate C and for storing the wafers W after the processing process in the carrier C is arranged. At the back of the unloading and storing arm 3, the wafer W is transferred to and from the unloading and storing arm 3 and is a transfer arm 4 which is a transfer mechanism.
Is waiting. The transfer arm 4 is the cleaning processing system 1
It is provided so as to be movable along the transport path 6 provided at the center of the. Various processing devices are arranged on both sides of the transport path 6. Specifically, on one side of the transport path 6,
For example, a surface treatment device 7 for cleaning the surface of the wafer W
And a back surface processing device 8 for cleaning the back surface of the wafer W are arranged side by side. Further, four heating devices 9 are stacked and provided on the other side of the transport path 6. The heating device 9 is means for heating and drying the wafer W. Adjacent to the heating device 9, two wafer reversing devices 10 are stacked and provided.
【００２１】ここで，表面処理装置７の構成について説
明する。図２は，表面処理装置７の内部構造の平面図で
あり，図３は，その側面図である。表面処理装置７に
は，ケース２０のほぼ中央において，ウェハＷを水平に
吸着保持した状態でモータ２１によって回転するスピン
チャック２２と，このスピンチャック２２及びウェハＷ
を包囲しウェハＷの表面に供給した処理液等が周囲に飛
び散ることを防止するカップ２３とを備えている。Here, the structure of the surface treatment device 7 will be described. 2 is a plan view of the internal structure of the surface treatment apparatus 7, and FIG. 3 is a side view thereof. The surface treatment apparatus 7 has a spin chuck 22 that is rotated by a motor 21 in a state where a wafer W is horizontally attracted and held, and the spin chuck 22 and the wafer W, in a substantially central portion of the case 20.
And a cup 23 that prevents the processing liquid or the like that surrounds the wafer W and is supplied to the surface of the wafer W from scattering around.
【００２２】そして，表面処理装置７は，スピンチャッ
ク２２に保持されたウェハＷの表面に後述する処理体４
０を接触させてスクラブ洗浄処理を行うものであり。こ
の処理体４０を備えたスクラブ洗浄機２４は，処理体４
０をウェハＷの表面から離れた退避位置２５に退避自在
にするように構成されている。そして，この退避位置２
５には，処理体４０による接触圧（単位面積当たりの圧
力）を測定する測定機器２６と処理体４０を浄化する浄
化機器２７とを隣接して配置できるように，これら機器
を一体にした測定浄化機２８が配置されている。Then, the surface processing apparatus 7 applies the processing body 4 to be described later to the surface of the wafer W held by the spin chuck 22.
0 is contacted to perform scrub cleaning treatment. The scrubbing machine 24 equipped with this processing body 40
It is configured so that 0 can be retracted to a retracted position 25 apart from the surface of the wafer W. And this retracted position 2
In Fig. 5, a measuring device 26 for measuring the contact pressure (pressure per unit area) by the processing body 40 and a purifying device 27 for purifying the processing body 40 can be arranged adjacent to each other so that measurement can be performed integrally with these devices. A purifier 28 is arranged.
【００２３】図４に示すように，アーム部材３０は，フ
レーム３０ａと，カバー３０ｂとを有している。カバー
３０ｂ内の基端部には，モータ３１が設けられており，
カバー３０ｂ内の先端部には，エアシリンダ３２が設け
られている。このエアシリンダ３２の下面には，上下方
向に昇降移動するロッド３３が接続されている。このロ
ッド３３には，支持ガイド３４に沿って上下方向に昇降
移動する昇降体３５が接続されている。フレーム３０ａ
の上面に重量センサ３６を設け，この重量センサ３６に
昇降体３５の下面が当接するように構成する。重量セン
サ３６によって昇降体３５の下方への押圧力を測定する
ことができ，これを介して，スクラブ洗浄機２４は，洗
浄処理中に後述するシャフト３７の推力を感知できる構
成になっている。そして，昇降体３５の測定結果を基に
ロッド３３の推力を調整できる構成になっている。As shown in FIG. 4, the arm member 30 has a frame 30a and a cover 30b. A motor 31 is provided at the base end of the cover 30b,
An air cylinder 32 is provided at the tip of the cover 30b. A rod 33 that moves up and down in the vertical direction is connected to the lower surface of the air cylinder 32. An elevating body 35 that moves up and down along a support guide 34 is connected to the rod 33. Frame 30a
A weight sensor 36 is provided on the upper surface of the, and the lower surface of the lifting / lowering body 35 abuts on the weight sensor 36. The weight sensor 36 can measure the downward pressing force of the elevating / lowering body 35, and the scrubbing washer 24 is configured to be able to detect the thrust force of a shaft 37, which will be described later, during the cleaning process. Then, the thrust of the rod 33 can be adjusted based on the measurement result of the lifting body 35.
【００２４】昇降体３５の他端部には，前述したシャフ
ト３７の上端部が回転自在に支持されており，シャフト
３７の下端部は，アーム部材３０の下方に突出してい
る。シャフト３７の突出部外周には，防護カバー３８が
配置されており，シャフト３７の下端部には，取付具３
９を介して，処理体４０が着脱自在に設けられている。
そして，シャフト３７の昇降稼働に伴い，処理体４０
は，上下方向に（図４中の往復矢印Ａの方向）に昇降移
動するようになっている。The upper end of the shaft 37 is rotatably supported on the other end of the elevating body 35, and the lower end of the shaft 37 projects below the arm member 30. A protective cover 38 is arranged on the outer periphery of the protruding portion of the shaft 37, and the fixture 3 is attached to the lower end portion of the shaft 37.
A processing body 40 is detachably provided via the unit 9.
Then, as the shaft 37 moves up and down, the processing body 40
Moves up and down in the vertical direction (direction of the reciprocating arrow A in FIG. 4).
【００２５】シャフト３７の昇降移動において，第１の
供給排気部４１からの空気の供給，第２の供給排気部４
２からの空気の排気によって，ロッド３３，昇降体３５
を介してシャフト３７を下降移動させ，第１の供給排気
部４１からの空気の排気，第２の供給排気部４２からの
空気の供給によって，ロッド３３，昇降体３５を介して
シャフト３７を上昇移動させるようになっている。この
場合，洗浄処理の種類によって，エアシリンダ３２の下
降稼働により，シャフト３７に下向きの推力を付与し，
処理体４０にかかる自重とシャフト３７によって処理体
４０に働く推力との和が，所定の接触圧になる場合と，
ウェハＷの表面から処理体４０を離れさせない程度で，
エアシリンダ３２の上昇稼働により，シャフト３７に上
向きの推力を付与し，処理体４０にかかる自重とシャフ
ト３７によって処理体４０に働くの推力との差が，例え
ば６０ｇｆ以下の所定の接触圧になる場合とを適宜に使
い分けている。When the shaft 37 is moved up and down, air is supplied from the first supply / exhaust section 41 and the second supply / exhaust section 4 is supplied.
By exhausting air from 2, the rod 33, the lifting body 35
The shaft 37 is moved downwards through the rod 33, and the shaft 37 is raised through the rod 33 and the lifting / lowering body 35 by the exhaust of air from the first supply / exhaust unit 41 and the supply of air from the second supply / exhaust unit 42. It is designed to be moved. In this case, depending on the type of cleaning process, a downward thrust is applied to the shaft 37 by the downward operation of the air cylinder 32,
When the sum of the self-weight applied to the processing body 40 and the thrust acting on the processing body 40 by the shaft 37 is a predetermined contact pressure,
As long as the processing body 40 is not separated from the surface of the wafer W,
The upward movement of the air cylinder 32 applies upward thrust to the shaft 37, and the difference between the own weight applied to the processing body 40 and the thrust acting on the processing body 40 by the shaft 37 becomes a predetermined contact pressure of, for example, 60 gf or less. The case and the case are properly used.
【００２６】この処理体４０は，その下面にウェハＷの
表面を綺麗に洗浄処理すべくブラシやスポンジ等の部材
４３を具備している。洗浄対象によって，部材４３を，
適宜毛足の硬いナイロンブラシなどの硬質ブラシや，毛
足の柔らかい，例えばモヘアブラシなどの軟質ブラシを
選択することが可能である。The processing body 40 is provided with a member 43 such as a brush or a sponge on the lower surface thereof for cleaning the surface of the wafer W cleanly. Depending on the cleaning object, the member 43
It is possible to appropriately select a hard brush such as a nylon brush having a hard bristle or a soft brush having a soft bristle, for example, a mohair brush.
【００２７】一方，シャフト３７の上端部近傍に固着さ
れた従動プーリ４５と，前記モータ３１に回転自在に固
着された駆動プーリ４６との間に，ベルト４７を巻回す
る。こうして，モータ３１の回転駆動は，ベルト４７を
介してシャフト３７に伝わり，シャフト３７及び処理体
４０とを一体的に回転（図４中の往復回動矢印Ｂの方
向）させるようになっている。On the other hand, a belt 47 is wound between a driven pulley 45 fixed near the upper end of the shaft 37 and a drive pulley 46 fixed rotatably to the motor 31. In this way, the rotational drive of the motor 31 is transmitted to the shaft 37 via the belt 47 to integrally rotate the shaft 37 and the processing body 40 (direction of reciprocating rotation arrow B in FIG. 4). .
【００２８】図３及び図４に示すように，スクラブ洗浄
機２４’のアーム部材３０の基端部は，図示しない駆動
機構によって昇降（図４中の往復矢印Ｃの方向）及び回
転（図４中の往復回動矢印Ｄの方向）するシャフト５０
の上端に，水平姿勢で固定されている。アーム部材３０
は，図示しない駆動機構の稼働によって，退避位置２５
とウェハＷの上方との間を，図４中のθ方向に旋回して
往復移動できる構成になっている。As shown in FIGS. 3 and 4, the base end of the arm member 30 of the scrubbing machine 24 'is moved up and down (direction of reciprocating arrow C in FIG. 4) and rotated (FIG. 4) by a drive mechanism (not shown). Shaft 50 that reciprocates in the direction of arrow D)
It is fixed in the horizontal position on the upper end of the. Arm member 30
Is moved to the retracted position 25 by the operation of a drive mechanism (not shown).
The upper and lower sides of the wafer W can be swung back and forth in the θ direction in FIG.
【００２９】図２で二点鎖線で示したスクラブ洗浄機２
４は，処理体４０を退避位置２５に退避させた状態を示
しており，測定浄化機２８は，処理体４０の下方に位置
するように配置されている。図５に示したように，測定
浄化機２８は，前記ケース２０の上面に突き出ているカ
ップ部５５と，このカップ部５５を支持する基台部５６
を有している。カップ部５５の上部は開口しており，略
円形筒状に形成されている。カップ部５５は，仕切壁５
７によって左右対称に区画されており，一方の側は，測
定機器２６専用の収納器５８とし，他方の側は，浄化機
器２７専用の収納器５９となっている。収納器５８の上
端は，収納器５９の上端よりも若干高くなっている。A scrubbing machine 2 shown by a chain double-dashed line in FIG.
4 shows a state in which the processing body 40 is retracted to the retreat position 25, and the measurement purification device 28 is arranged so as to be located below the processing body 40. As shown in FIG. 5, the measuring and purifying device 28 includes a cup portion 55 protruding from the upper surface of the case 20 and a base portion 56 for supporting the cup portion 55.
have. The upper portion of the cup portion 55 is open and is formed in a substantially circular tubular shape. The cup part 55 is the partition wall 5.
The parts are symmetrically divided by 7, and one side is a container 58 dedicated to the measuring device 26, and the other side is a container 59 dedicated to the purifying device 27. The upper end of the container 58 is slightly higher than the upper end of the container 59.
【００３０】測定機器２６において，図５で二点鎖線で
示した処理体４０’は，駆動機構の稼働によりスクラブ
洗浄機２４が測定機器２６の上方にまで回動移動し，こ
れに伴い収納器５８内に退避した状態を示している。処
理体４０’を収納する収納器５８内において，処理体４
０’を載置する台座６０は，収納器５８の底部に固定さ
れた支持台６１に装着されている。さらに，これら台座
６０及び支持台６１には，押圧センサ６２が下方から嵌
入させられている。押圧センサ６２は，台座６０内部に
密着した状態となっており，台座６０の載置面６３に処
理体４０’が載置された場合には，台座６０にかかる接
触圧を直接感知するようになっている。これにより，シ
ャフト３７によって処理体４０’に働く推力と，処理体
４０’の自重と，シャフト３７の摺動抵抗等との総和で
ある処理体４０の接触圧を，直接測定できる構成になっ
ている。In the measuring device 26, the processing body 40 'shown by the chain double-dashed line in FIG. 5 causes the scrubbing washer 24 to rotate above the measuring device 26 due to the operation of the drive mechanism, and the container 40' accordingly. The state of being retracted in 58 is shown. In the container 58 that stores the processing body 40 ', the processing body 4 is
The pedestal 60 on which 0'is placed is mounted on a support base 61 fixed to the bottom of the container 58. Further, a pressure sensor 62 is fitted into the pedestal 60 and the support base 61 from below. The pressure sensor 62 is in close contact with the inside of the pedestal 60. When the processing body 40 ′ is mounted on the mounting surface 63 of the pedestal 60, the pressure sensor 62 directly senses the contact pressure applied to the pedestal 60. Has become. As a result, the contact pressure of the processing body 40, which is the sum of the thrust acting on the processing body 40 ′ by the shaft 37, the weight of the processing body 40 ′, the sliding resistance of the shaft 37, etc., can be directly measured. There is.
【００３１】この場合，図６に示すように，台座６０の
載置面６３の高さが，スピンチャック２２に保持された
ウェハＷの表面の高さと等しい。これにより，ウェハＷ
を洗浄処理する時と同じ状況，具体的にはウェハＷの表
面とアーム部材３０までの距離や，エアシリンダ３２に
よってシャフト３７に推力を付与する際の条件等が，忠
実に再現されることになる。従って，測定機器２６によ
って，洗浄処理中における処理体４０の接触圧を正確に
測定できる構成になっている。In this case, as shown in FIG. 6, the height of the mounting surface 63 of the pedestal 60 is equal to the height of the surface of the wafer W held by the spin chuck 22. As a result, the wafer W
That the same condition as when the cleaning process is performed, specifically, the distance between the surface of the wafer W and the arm member 30, the condition when the thrust is applied to the shaft 37 by the air cylinder 32, and the like are faithfully reproduced. Become. Therefore, the measuring device 26 is configured to accurately measure the contact pressure of the processing body 40 during the cleaning process.
【００３２】そして，押圧センサ６２の測定結果は，図
７に示すように，制御部６４に入力されるように構成さ
れている。接触圧にずれがあれば，制御部６４は，予め
記憶されたプログラムに従って，調整信号を第１の供給
排気部４１の圧力調整弁６５と，第２の供給排気部４２
の圧力調整弁６６とに送信し，ロッド３３，昇降体３５
を介して，シャフト３７の推力を調整し，処理体４０の
接触圧を調整するようになっている。さらに，処理体４
０の接触圧が所定の設定値に調整された場合，この時の
昇降体３５の下方への押圧力を前記重量センサ３６によ
って測定し，そのデータを記憶しておく。そして，洗浄
処理中では，この記憶されたデータと洗浄処理中の重量
センサ３６による測定データとを比較することにより，
昇降体３５，シャフト３７を監視することができるよう
になっている。The measurement result of the pressure sensor 62 is input to the control unit 64, as shown in FIG. If there is a deviation in the contact pressure, the control unit 64 sends an adjustment signal to the pressure adjustment valve 65 of the first supply / exhaust unit 41 and the second supply / exhaust unit 42 according to a program stored in advance.
To the pressure adjusting valve 66 of the rod 33, the lifting body 35
The thrust of the shaft 37 is adjusted via the, and the contact pressure of the processing body 40 is adjusted. Furthermore, processing body 4
When the contact pressure of 0 is adjusted to a predetermined set value, the downward pressure of the elevating body 35 at this time is measured by the weight sensor 36, and the data is stored. Then, during the cleaning process, by comparing the stored data with the measurement data of the weight sensor 36 during the cleaning process,
The lifting body 35 and the shaft 37 can be monitored.
【００３３】接触圧の測定時期を，スピンチャック２２
によって保持された前の洗浄処理後のウェハＷを搬出し
スピンチャック２２に次の洗浄処理前のウェハＷをスピ
ンチャック２２に保持させるまでの間に設定している。
洗浄処理と洗浄処理との谷間に，スクラブ洗浄機２４を
退避位置２５に退避させれば，測定機器２６によって簡
単に接触圧を測定できる構成になっている。また，接触
圧を測定するために，測定系の部品を表面処理装置７に
取り付けたり，洗浄処理を長期に渡って中断する必要は
ない。The contact time of the contact pressure is measured by the spin chuck 22.
It is set until the wafer W after the previous cleaning process held by is carried out and the spin chuck 22 holds the wafer W after the next cleaning process on the spin chuck 22.
If the scrubbing machine 24 is retreated to the retreat position 25 between the cleaning process and the cleaning process, the contact pressure can be easily measured by the measuring device 26. Further, in order to measure the contact pressure, it is not necessary to attach a measurement system component to the surface treatment device 7 or interrupt the cleaning process for a long period of time.
【００３４】表面処理装置７には，スピンチャック２２
を挟んでスクラブ洗浄機２４と対称位置に純水供給ノズ
ル７０が配置されている。この純水供給ノズル７０は，
図２中のθ’方向に旋回して，往復移動できるようにな
っている。これにより，表面処理装置７では，洗浄処理
中に，処理液として純水をウェハＷの表面に供給する構
成になっている。前述したように，測定機器２６によっ
て接触圧を正確に測定する際には，ウェハＷを洗浄処理
している時と同じ状況を，忠実に再現することが好まし
い。そこで，収納器５８内には，純水を吐出する純水吐
出機構７１の吐出口が突き出ており，接触圧を測定する
際には，純水吐出機構７１から処理体４０に純水を吐出
するようになっている。The surface treatment device 7 includes a spin chuck 22.
A pure water supply nozzle 70 is arranged at a position symmetrical to the scrubbing machine 24 with the scissors interposed. This pure water supply nozzle 70
It is possible to reciprocate by turning in the θ ′ direction in FIG. As a result, the surface processing apparatus 7 is configured to supply pure water as a processing liquid to the surface of the wafer W during the cleaning process. As described above, when the contact pressure is accurately measured by the measuring device 26, it is preferable to faithfully reproduce the same situation as when the wafer W is being cleaned. Therefore, a discharge port of a pure water discharge mechanism 71 for discharging pure water projects into the container 58, and when measuring the contact pressure, pure water is discharged from the pure water discharge mechanism 71 to the processing body 40. It is supposed to do.
【００３５】浄化機器２７において，図５で二点鎖線で
示した処理体４０”は，駆動機構の稼働によりスクラブ
洗浄機２４が浄化機器２７の上方にまで回動移動し，こ
れに伴い，前記収納器５９内に退避した状態を示してい
る。処理体４０”を収納する収納器５９内には，浄化液
として純水を吐出する純水吐出機構７２の吐出口が突き
出ている。この場合，ウェハＷの洗浄処理毎の退避時間
に，収納器５９に処理体４０”を収納し，純水吐出機構
７２から純水を処理体４０”に供給して，処理体４０”
を浄化する構成になっている。そして，仕切壁５７の下
方には連通口７５が形成されており，収納器５８と収納
器５９とは，お互いに下方で連通している。収納器５９
の底部には排液孔７６が形成されており，この排液孔７
６は，収納器５８の底部にまで広がっている。さらに，
排液孔７６には，排液管路７７が接続されており，収納
器５８内の純水及び収納器５９内の純水は，いずれも排
液孔７６から排液管路７７を介して装置外に排液され
る。In the purifying device 27, the treatment body 40 " shown by the chain double-dashed line in FIG. 5 causes the scrubbing washer 24 to rotate above the purifying device 27 due to the operation of the drive mechanism. It shows a state of being retracted into the container 59. Inside the container 59 for storing the treatment object 40 ″, a discharge port of a pure water discharge mechanism 72 for discharging pure water as a cleaning liquid is projected. In this case, during the evacuation time for each cleaning process of the wafer W, the processing body 40 ″ is stored in the storage container 59 , and pure water is supplied from the pure water discharge mechanism 72 to the processing body 40 ″, thereby processing the processing body 40 ″.
It is configured to purify. And, below the partition wall 57 and communicating port 75 is formed, the housing 58 and the housing 59, and communicates below with each other. Storage 59
A drainage hole 76 is formed at the bottom of the drainage hole 7
6 extends to the bottom of the container 58 . further,
A drainage pipe 77 is connected to the drainage hole 76, and the pure water in the container 58 and the pure water in the container 59 are both discharged from the drainage hole 76 via the drainage pipe 77. Drained to the outside of the device.
【００３６】次に，以上のように構成された表面処理装
置７を備えた洗浄処理システム１において行われるウェ
ハＷの処理を説明する。まず，図示しない搬送ロボット
が未だ洗浄されていないウェハＷを例えば２５枚ずつ収
納したキャリアＣを載置部２に載置する。そして，この
載置部２に載置されたキャリアＣから一枚ずつウェハＷ
が取り出され，取出搬入アーム３を介して搬送アーム４
に受け渡される。そして，表面処理装置７及び裏面処理
装置８を用いて，ウェハＷを一枚ずつ洗浄処理し，ウェ
ハＷの表裏面に付着している有機汚染物質，パーティク
ル等を除去する。そして，ウェハＷを，加熱装置９で加
熱して乾燥させる。所定の処理工程が終了したウェハＷ
は，搬送アーム４から取出収納アーム３に受け渡され，
再びキャリアＣに収納される。Next, the processing of the wafer W performed in the cleaning processing system 1 equipped with the surface processing apparatus 7 configured as described above will be described. First, a carrier robot (not shown) mounts a carrier C containing, for example, 25 uncleaned wafers W on the mounting unit 2. Then, the wafers W are transferred one by one from the carrier C placed on the placing portion 2.
Is taken out, and the transfer arm 4 is passed through the take-in / take-in arm 3
To be delivered to. Then, the front surface processing apparatus 7 and the back surface processing apparatus 8 are used to wash the wafers W one by one to remove organic contaminants, particles and the like adhering to the front and back surfaces of the wafer W. Then, the wafer W is heated by the heating device 9 to be dried. Wafer W for which a predetermined processing step has been completed
Is transferred from the transfer arm 4 to the take-out storage arm 3,
It is stored in the carrier C again.
【００３７】ここで，表面処理装置７での洗浄処理の工
程について説明する。まず，表面処理装置７にウェハＷ
が搬入され，スピンチャック２２にウェハＷが保持され
て回転を開始すると，図２に示したように，アーム部材
３０は退避位置２５からウェハＷの上方に移動し，図３
に示したように，処理体４０をウェハＷの表面に接触さ
せる。そして，エアシリンダ３２の昇降稼働によって，
シャフト３７に推力を付与し，この推力が処理体４０に
働く。処理体４０はウェハＷの表面を押圧し，ウェハＷ
の表面に所定の接触圧（単位面積当たりの圧力）が加わ
る。この状態で，アーム部材３０を少なくともウェハＷ
の中心から周縁部まで回動させて，ウェハＷの表面を均
一に洗浄処理する。一方，純水供給ノズル７０もウェハ
Ｗの上方に移動し，純水をウェハＷの表面に供給する。Now, the steps of the cleaning process in the surface processing apparatus 7 will be described. First, the wafer W is applied to the surface treatment device 7.
When the wafer W is carried in, the wafer W is held on the spin chuck 22 and starts to rotate, the arm member 30 moves from the retracted position 25 to above the wafer W as shown in FIG.
As shown in, the processing body 40 is brought into contact with the surface of the wafer W. Then, by the lifting operation of the air cylinder 32,
A thrust is applied to the shaft 37, and this thrust acts on the processing body 40. The processing body 40 presses the surface of the wafer W,
A predetermined contact pressure (pressure per unit area) is applied to the surface of the. In this state, at least the wafer W
The surface of the wafer W is uniformly cleaned by rotating the wafer W from the center to the peripheral portion. On the other hand, the pure water supply nozzle 70 also moves above the wafer W and supplies pure water to the surface of the wafer W.
【００３８】所定の時間が経過後，スクラブ洗浄及びメ
ガソニック洗浄が共に終了する。アーム部材３０をウェ
ハＷの上方から旋回退避させ，退避位置２５へと戻す。
同様に純水供給ノズル７０もウェハＷの表面から旋回退
避させ元の状態に戻す。こうして，洗浄処理が終了した
ウェハＷは，搬送アーム４によって表面処理装置７から
搬出され，裏面処理装置８へ搬送される。一方，表面処
理装置７では，次の洗浄前のウェハＷが搬入され，以
後，同様の洗浄処理が連続して繰り返されていく。After a predetermined time has passed, both scrub cleaning and megasonic cleaning are completed. The arm member 30 is swung and retracted from above the wafer W and returned to the retracted position 25.
Similarly, the pure water supply nozzle 70 is also swung away from the surface of the wafer W and returned to the original state. In this way, the wafer W that has been cleaned is unloaded from the front surface processing apparatus 7 by the transfer arm 4 and transferred to the back surface processing apparatus 8. On the other hand, in the surface treatment apparatus 7, the next wafer W before cleaning is carried in, and thereafter, the same cleaning process is continuously repeated.
【００３９】ところで，重量センサ３６には，処理体４
０を所定の接触圧に達成するために必要な昇降体３５の
押圧力のデータが予め記憶されている。しかしながら，
洗浄処理中においては，重量センサ３６によって昇降体
３５の下向きの押圧力を測定し，シャフト３７の推力を
感知し監視できるものの，処理体４０によって実際にウ
ェハＷの表面に加わる接触圧を直接感知することはでき
ない。処理体４０の接触圧を直接測定することは，信頼
性のある洗浄処理を行う上で欠かせない。By the way, the weight sensor 36 includes a processing body 4
Data of the pressing force of the lifting / lowering body 35 necessary for achieving 0 as a predetermined contact pressure is stored in advance. However,
During the cleaning process, the weight sensor 36 can measure the downward pressing force of the lifting / lowering body 35 to detect and monitor the thrust of the shaft 37, but the processing body 40 directly detects the contact pressure applied to the surface of the wafer W. You cannot do it. Directly measuring the contact pressure of the processing body 40 is essential for performing a reliable cleaning process.
【００４０】そこで，スピンチャック２２によって保持
された前の洗浄処理後のウェハＷを搬出しスピンチャッ
ク２２に次の洗浄前のウェハＷを保持させるまでの間
に，測定機器２６によって処理体４０の接触圧を測定す
る。ウェハＷを連続洗浄処理する場合には，ウェハＷを
洗浄処理するごとに，前述したようにスクラブ洗浄機２
４を退避させるのに伴い，処理体４０を退避位置２５に
退避させる。そして，収納器５８に処理体４０を収納
し，測定機器２６を用いて接触圧を直接測定する。Therefore, before the wafer W after the previous cleaning process held by the spin chuck 22 is carried out and the next wafer W before the next cleaning is held by the spin chuck 22, the measuring device 26 is used to measure the wafer 40. Measure the contact pressure. When the wafer W is continuously cleaned, as described above, the scrub cleaning machine 2 is used every time the wafer W is cleaned.
The processing body 40 is retreated to the retreat position 25 as the 4 is retreated. Then, the processing body 40 is housed in the housing 58 and the contact pressure is directly measured using the measuring device 26.
【００４１】具体的には，台座６０に処理体４０を載置
させ，台座６０にかかる接触圧を押圧センサ６２によっ
て測定する。台座６０にかかる接触圧は，処理体４０の
接触圧とみなすことができる。この場合，図６に示した
ように，台座６０の載置面６３をウェハＷの表面と見立
て，スピンチャック２２に保持されたウェハＷの表面の
高さと等しい高さに台座６０の載置面６３の高さを設定
する。また，洗浄処理の効果を向上させるために，洗浄
処理中では純水供給ノズル７０から純水をウェハＷに供
給している。これに対応して，接触圧の測定中では処理
液吐出機構７２から純水を吐出させて純水供給ノズル７
０の役割を代替させる。これらにより，洗浄処理中にお
いて実際にウェハＷの表面に処理体４０が接触する際の
状況を，忠実に再現できる。従って，洗浄処理中に接触
圧を測定しなくても，測定機器２６で接触圧を測定すれ
ば，洗浄処理中における処理体４０の接触圧のデータを
正確に得ることができる。さらに，純水を測定中の処理
体４０にも吐出し，処理体４０を浄化する。Specifically, the processing body 40 is placed on the pedestal 60, and the contact pressure applied to the pedestal 60 is measured by the pressure sensor 62. The contact pressure applied to the pedestal 60 can be regarded as the contact pressure of the processing body 40. In this case, as shown in FIG. 6, the mounting surface 63 of the pedestal 60 is regarded as the surface of the wafer W, and the mounting surface of the pedestal 60 has a height equal to the height of the surface of the wafer W held by the spin chuck 22. Set the height of 63. Further, in order to improve the effect of the cleaning process, pure water is supplied to the wafer W from the pure water supply nozzle 70 during the cleaning process. Correspondingly, during measurement of the contact pressure, pure water is ejected from the treatment liquid ejecting mechanism 72 to supply the pure water supply nozzle 7
The role of 0 is replaced. As a result, it is possible to faithfully reproduce the situation when the processing body 40 actually contacts the surface of the wafer W during the cleaning process. Therefore, even if the contact pressure is not measured during the cleaning process, the contact pressure data of the processing body 40 during the cleaning process can be accurately obtained by measuring the contact pressure with the measuring device 26. Further, pure water is also discharged to the processing body 40 during measurement to purify the processing body 40.
【００４２】測定の結果，接触圧が正常であれば次のウ
ェハＷを洗浄処理する。そして，許容範囲を越えた接触
圧の異常が発見されるまで連続洗浄処理を継続させる。
こうして，接触圧を適宜に確認できるので，連続洗浄処
理を中断することがない。また，接触圧のずれが感知さ
れれば，図７に示したように，制御部６４からの調整信
号によりエアシリンダ３２の昇降稼働を自動的に制御
し，シャフト３７の推力を調整して所定の接触圧を再び
得る。また，退避位置２５に予め測定機器２６を設けて
いるので，測定の準備にかかる手間がなくなり，接触圧
を簡易に測定できる。If the contact pressure is normal as a result of the measurement, the next wafer W is cleaned. Then, the continuous cleaning process is continued until an abnormal contact pressure exceeding the allowable range is found.
In this way, the contact pressure can be confirmed appropriately, so that the continuous cleaning process is not interrupted. When the contact pressure deviation is detected, as shown in FIG. 7, the up / down operation of the air cylinder 32 is automatically controlled by the adjustment signal from the control unit 64, and the thrust of the shaft 37 is adjusted to a predetermined value. The contact pressure of is obtained again. Further, since the measuring device 26 is provided in advance at the retracted position 25, the time and effort required for the preparation for measurement are eliminated, and the contact pressure can be measured easily.
【００４３】測定後，処理体４０を浄化機器２７の収納
器５９に収納し，処理体４０に向かって純水吐出機構７
２から純水を吐出させる。これにより，処理体４０の浄
化することができる。また，測定機器２６と浄化機器２
７とを隣接して配置しているので，接触圧の測定から処
理体４０の浄化への移行が早い。After the measurement, the treatment body 40 is stored in the container 59 of the purification device 27, and the pure water discharge mechanism 7 is directed toward the treatment body 40.
Pure water is discharged from 2. As a result, the processing body 40 can be purified. In addition, the measuring device 26 and the purification device 2
7 and 7 are arranged adjacent to each other, the transition from the measurement of the contact pressure to the purification of the processing body 40 is quick.
【００４４】こうして，ウェハＷに対して所定の処理工
程を施し，処理済みのウェハＷがキャリアＣに２５枚収
納されると，キャリアＣ単位で洗浄処理システム１外に
搬出される。In this way, when the wafer W is subjected to the predetermined processing steps and 25 processed wafers W are stored in the carrier C, they are carried out of the cleaning processing system 1 in units of the carrier C.
【００４５】かくして，本実施の形態の表面処理装置７
によれば，退避位置２５に設けた測定機器２６によって
処理体４０による接触圧を測定することにより，接触圧
を適宜に確認でき，測定も簡単になる。従って，スルー
プットを低下させず，測定する手間もかからない。ま
た，測定機器２６によって，洗浄処理中の処理体４０の
接触圧のデータを正確に得ることができるので，接触圧
の異常やずれ等を監視することができる。従って，接触
圧の精密な制御が可能となり，洗浄処理の信頼性を向上
させることができる。Thus, the surface treatment apparatus 7 of this embodiment
According to the method, by measuring the contact pressure of the processing body 40 by the measuring device 26 provided at the retracted position 25, the contact pressure can be appropriately confirmed, and the measurement is simplified. Therefore, the throughput is not reduced, and there is no need for measurement. Further, since the measuring device 26 can accurately obtain the data of the contact pressure of the processing body 40 during the cleaning process, it is possible to monitor the abnormality or deviation of the contact pressure. Therefore, the contact pressure can be precisely controlled, and the reliability of the cleaning process can be improved.
【００４６】なお，本発明の実施の形態の一例について
説明したが，本発明はこの例に限定されず種々の様態を
採りうるものである。例えば，基板は上記した本実施の
形態のように半導体ウェハＷに限るものでなく，ＬＣＤ
基板，ガラス基板，ＣＤ基板，フォトマスク，プリント
基板，セラミック基板等でもあってもよい。また，処理
液は，純水に限るものでなく，過酸化水素水，フッ酸，
アンモニア水，塩酸，硫酸等でもよい。Although one example of the embodiment of the present invention has been described, the present invention is not limited to this example and can take various forms. For example, the substrate is not limited to the semiconductor wafer W as in this embodiment described above, but LCD
It may be a substrate, a glass substrate, a CD substrate, a photomask, a printed substrate, a ceramic substrate, or the like. Further, the treatment liquid is not limited to pure water, but hydrogen peroxide water, hydrofluoric acid,
Ammonia water, hydrochloric acid, sulfuric acid, etc. may be used.
【００４７】[0047]
【発明の効果】本発明によれば，退避位置に設けた測定
手段によって処理体の接触圧を測定することにより，接
触圧を適宜に確認でき，測定も簡単になる。従って，ス
ループットを低下させず，測定する手間もかからない。According to the present invention , by measuring the contact pressure of the processing body by the measuring means provided at the retracted position, the contact pressure can be properly confirmed and the measurement is simplified. Therefore, the throughput is not reduced, and there is no need for measurement.
【００４８】本発明によれば，測定手段によって，処理
中における処理体の接触圧のデータを正確に得ることが
できるので，接触圧の異常やずれ等を監視することがで
きる。従って，接触圧の精密な制御が可能となり，処理
の信頼性を向上させることができる。その結果，例えば
半導体製造工程における微細化技術にも十分対応するこ
とができる。According to the present invention , since the data of the contact pressure of the processing body during the processing can be accurately obtained by the measuring means, it is possible to monitor the abnormality or deviation of the contact pressure. Therefore, the contact pressure can be precisely controlled, and the reliability of processing can be improved. As a result, for example, it is possible to sufficiently deal with the miniaturization technology in the semiconductor manufacturing process.
【００４９】本発明によれば，処理体を浄化することが
できる。本発明によれば，処理体の接触圧の測定から処
理体の清浄への移行が早く，スループットを短縮させる
ことができる。According to the present invention , the treatment object can be purified. According to the present invention , the transition from the measurement of the contact pressure of the processing object to the cleaning of the processing object is quick, and the throughput can be shortened.
【００５０】本発明によれば，接触圧を適宜に確認でき
るので，スループットを低下させない。本発明によれ
ば，処理体を浄化することができる。According to the present invention , since the contact pressure can be confirmed appropriately, the throughput is not reduced. According to the present invention , the treatment object can be purified.
【図１】本実施の形態にかかる表面処理装置を備えた洗
浄処理システムの斜視図である。FIG. 1 is a perspective view of a cleaning treatment system including a surface treatment apparatus according to the present embodiment.
【図２】本実施の形態にかかる表面処理装置の内部構造
の平面図である。FIG. 2 is a plan view of the internal structure of the surface treatment apparatus according to the present embodiment.
【図３】本実施の形態にかかる表面処理装置の内部構造
の断面図である。FIG. 3 is a sectional view of the internal structure of the surface treatment apparatus according to the present embodiment.
【図４】スクラブ洗浄機の内部構造の断面図である。FIG. 4 is a cross-sectional view of the internal structure of the scrub cleaning machine.
【図５】測定浄化機の内部構造の断面図である。FIG. 5 is a cross-sectional view of the internal structure of the measurement purification device.
【図６】台座の載置面とスピンチャックに保持されたウ
ェハの表面との高さが等しいことを説明する説明図であ
る。FIG. 6 is an explanatory diagram illustrating that the mounting surface of the pedestal and the surface of the wafer held by the spin chuck have the same height.
【図７】シャフトの上下方向の推力を制御する仕組みを
説明する説明図である。FIG. 7 is an explanatory diagram illustrating a mechanism for controlling the vertical thrust of the shaft.
１ 洗浄処理システム ７ 表面処理装置 ２２ スピンチャック ２４ スクラブ洗浄機 ２５ 退避位置 ２６ 測定機器 ２７ 浄化機器 ２８ 測定浄化機 ４０ 処理体 ６０ 台座 ６２ 押圧センサ ６３ 載置面 ７１ 純水吐出機構 Ｗ ウェハ 1 Cleaning system 7 Surface treatment equipment 22 Spin chuck 24 scrub cleaner 25 Retreat position 26 Measuring equipment 27 Purification equipment 28 Measuring Purifier 40 processing body 60 pedestal 62 Pressure sensor 63 Placement surface 71 Pure water discharge mechanism W wafer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/304 ６４８ Ｈ０１Ｌ 21/304 ６４８Ｇ (72)発明者 宮崎 高典 佐賀県鳥栖市西新町1375番地41号 東京 エレクトロン九州株式会社 佐賀事業所 内 (56)参考文献 特開 平10−135167（ＪＰ，Ａ) 特開 平９−22362（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01L 5/00 B08B 1/04 B08B 3/02 B08B 11/02 H01L 21/304 644 H01L 21/304 648 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H01L 21/304 648 H01L 21/304 648G (72) Inventor Takanori Miyazaki 1375 41-3 Nishishinmachi, Tosu City, Saga Prefecture Tokyo Electron Kyushu Stock Company Saga Works (56) References JP 10-135167 (JP, A) JP 9-22362 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) G01L 5 / 00 B08B 1/04 B08B 3/02 B08B 11/02 H01L 21/304 644 H01L 21/304 648
Claims (8)
に処理体を接触させて処理する処理装置において， 前記処理体を基板の表面から離れた退避位置に退避自在
に構成し， 前記退避位置に，処理体の接触圧を測定する収容器と，
処理体を浄化する収容器を隣接して設け， 前記処理体の接触圧を測定する収容器に押圧センサを設
け，前記処理体を浄化する収容器に浄化液を吐出する吐
出機構を設けたことを特徴とする，処理装置。 1. A surface of a substrate held by a holding means.
In a processing device for processing by bringing a processing body into contact with The processing object can be retracted to a retracted position away from the surface of the substrate.
To In the retracted position, A container for measuring the contact pressure of the processing body,
A container for purifying the processing body is provided adjacently, A pressure sensor is installed in the container that measures the contact pressure of the processing body.
Discharge the cleaning liquid into a container for cleaning the processing body.
A processing device characterized by having an output mechanism.
処理液を供給する供給手段を設け，前記処理体の接触圧
を測定する収容器に，処理している時と同じ状況を再現
させるように処理液を供給する処理液吐出機構を設けた
ことを特徴する，請求項１に記載の処理装置。 2. The substrate held by the holding means
A supply means for supplying a processing liquid is provided, and the contact pressure of the processing body is set.
Reproduce the same situation as when processing in the container that measures
A treatment liquid discharge mechanism was provided to supply the treatment liquid
The processing device according to claim 1, wherein:
と，前記処理体を浄化する収容器が，仕切壁によって区
画され，前記仕切壁の下方には，前記処理体の接触圧を
測定する収容器と前記処理体を浄化する収容器を連通さ
せる連通口が形成されていることを特徴とする，請求項
１又は２に記載の処理装置。 3. A container for measuring the contact pressure of the processing body.
And a container for purifying the treatment body is separated by a partition wall.
Below the partition wall, the contact pressure of the processing body is
Connect the container for measurement and the container for purifying the treated body.
A communication port is formed to allow the communication port to be formed.
The processing device according to 1 or 2.
排液孔が形成されていることを特徴とする，請求項３に
記載の処理装置。 4. The bottom of the container for purifying the processing body
The drainage hole is formed, In Claim 3, characterized by the above-mentioned.
The processing device described.
に処理体を接触させて処理する処理装置において， 処理体を昇降させるエアシリンダを設け， 前記処理体を基板の表面から離れた退避位置に退避自在
に構成し， 前記退避位置に退避した処理体の接触圧を
測定する測定手段と，その測定結果が入力される制御部
を設け， 前記制御部は，前記エアシリンダの稼動を制御して，処
理体の接触圧を調整することを特徴とする，処理装置。 5. The surface of the substrate held by the holding means
In a processing apparatus for processing a processing object by bringing it into contact with an air cylinder, an air cylinder for raising and lowering the processing object is provided, and the processing object can be retracted to a retracted position away from the surface of the substrate.
The contact pressure of the processing body retracted to the retracted position is
Measuring unit for measurement and control unit to which the measurement result is input
And the control unit controls the operation of the air cylinder to perform processing.
A processing device characterized by adjusting the contact pressure of a physical body.
量センサを設け， 前記制御部は，処理体の接触圧が所定の設定値に調整さ
れた場合の，重量センサによる測定データを記憶してお
き，その記憶された測定データと，洗浄中に重 量センサ
で測定される測定データを比較することにより，処理体
の接触圧を調整することを特徴とする，請求項５に記載
の処理装置。 6. A weight for measuring the pressing force of the air cylinder.
An amount sensor is provided, and the control unit adjusts the contact pressure of the processing body to a predetermined set value.
If the weight sensor measures data,
Can, Weight sensor and the stored measurement data, during the washing
By comparing the measurement data measured in
6. The contact pressure of is adjusted, The claim 5 characterized by the above-mentioned.
Processing equipment.
に処理体を接触させて処理する処理方法において， 基板の処理の間に，および／または前記保持手段によっ
て保持された処理後の基板を搬出し前記保持手段に次の
処理前の基板を保持させるまでの間に，前記処理体を基
板の上方から退避させて処理体の接触圧を測定し， 前記処理体を昇降させるエアシリンダの稼動を制御し
て，処理体の接触圧を調整することを特徴とする，処理
方法。 7. The surface of the substrate held by the holding means
In the processing method in which the processing body is brought into contact with During processing of the substrate and / or by said holding means
The processed substrate held by the
While the substrate before processing is held, the above-mentioned processed body is
Measure the contact pressure of the processing object by retracting from above the plateThen It controls the operation of the air cylinder that raises and lowers the processing body.
Processing, which is characterized by adjusting the contact pressure of the processing body.
Method.
量センサを設け，前記処理体の接触圧が所定の設定値に
調整された場合の，重量センサによる測定データを記憶
しておき，その記憶された測定データと，洗浄中に重量
センサで測定される測定データを比較することにより，
前記エアシリンダの稼動を制御し，処理体の接触圧を調
整することを特徴とする，請求項７に記載の処理方法。 8. A weight for measuring the pressing force of the air cylinder.
A quantity sensor is provided so that the contact pressure of the processing body reaches a predetermined set value.
Stores the measurement data of the weight sensor when adjusted
The stored measurement data and the weight during washing
By comparing the measurement data measured by the sensor,
Controls the operation of the air cylinder to adjust the contact pressure of the processing object.
The processing method according to claim 7, wherein the processing method is performed.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10869598A JP3415435B2 (en) | 1998-04-03 | 1998-04-03 | Processing device and processing method |
| US09/283,920 US6652662B1 (en) | 1998-04-03 | 1999-04-01 | Substrate surface processing apparatus and method |
| TW088105330A TW405150B (en) | 1998-04-03 | 1999-04-02 | Treating apparatus and treating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10869598A JP3415435B2 (en) | 1998-04-03 | 1998-04-03 | Processing device and processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11287721A JPH11287721A (en) | 1999-10-19 |
| JP3415435B2 true JP3415435B2 (en) | 2003-06-09 |
Family
ID=14491308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10869598A Expired - Lifetime JP3415435B2 (en) | 1998-04-03 | 1998-04-03 | Processing device and processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3415435B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4634426B2 (en) * | 2007-09-18 | 2011-02-16 | 株式会社荏原製作所 | Substrate cleaning method |
| US10141205B2 (en) * | 2014-09-26 | 2018-11-27 | Acm Research (Shanghai) Inc. | Apparatus and method for cleaning semiconductor wafer |
| JP6684191B2 (en) * | 2016-09-05 | 2020-04-22 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate cleaning apparatus and substrate processing apparatus including the same |
| CN114433518A (en) * | 2021-12-23 | 2022-05-06 | 伯恩高新科技（惠州）有限公司 | Dial plate cleaning method |
| CN114964598B (en) * | 2022-05-30 | 2023-12-29 | 天长市海通仪表电缆有限公司 | Arc inner scraping type pressure instrument with dust removing function |
-
1998
- 1998-04-03 JP JP10869598A patent/JP3415435B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11287721A (en) | 1999-10-19 |
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