JP3372235B2 - Ceramic substrate for semiconductor manufacturing and inspection equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention
Sheet (ceramic heater), electrostatic chuck, wafer pro
Used as semiconductor manufacturing and inspection equipment
Ceramic substrate. [0002] 2. Description of the Related Art Etching equipment and chemical vapor deposition equipment
In semiconductor manufacturing, inspection equipment, etc.
Using a metal substrate such as stainless steel or aluminum alloy
Heaters and wafer probers have been used. Only
However, metal heaters have poor temperature control characteristics.
Is thicker and thicker, resulting in
Has the problem of poor corrosion resistance to corrosive gases.
Was. On the other hand, Japanese Patent Laid-Open No. 11-40330 discloses
In reports, etc., instead of metal, aluminum nitride
Any ceramic heater is disclosed. When
Roller is aluminum nitride of base material that composes this heater
The material itself is generally white or gray-white,
This is not preferred as a susceptor. Rather, the black one
Are suitable for this type of application due to their high radiant heat.
And the high concealability of the electrode pattern
It was particularly suitable for a cover and an electrostatic chuck. In addition,
Thermometer (surface thermometer)
In the case of white or gray-white, the reflected heat is also measured.
Therefore, accurate temperature measurement was impossible. [0004] Conventionally developed in response to such demands
According to the invention, in an aluminum nitride substrate for a semiconductor manufacturing apparatus,
Containing crystalline carbon is proposed
(JP 9-48668 A). This aluminum nitride
The substrate contains carbon at a uniform concentration. [0005] However, this half
Aluminum nitride substrates for conductor manufacturing equipment
Therefore, sinterability, concealment, thermal conductivity, volume resistance, etc.
The required characteristics are different, and carbon is
Even if the content is uniform, the above-mentioned required properties are not sufficiently satisfied.
Semiconductor manufacturing equipment such as electrostatic chucks
The function of the wafer prober as a semiconductor inspection device declined
In some cases. [0006] Means for Solving the Problems The present inventors have solved the above problems.
As a result of intensive research to solve, for example, electrostatic electrodes
And below the RF electrode and above the electrostatic and RF electrodes
By changing the carbon concentration between
Semiconductor manufacturing and inspection ceramics that can satisfy the required characteristics described
Found that it is possible to manufacture
Ming has been completed. That is, the semiconductor manufacturing / inspection apparatus of the present invention
The ceramic substrate is placed in contact with the semiconductor wafer.
Or heating at regular intervals
Ceramic substrate for semiconductor manufacturing and inspection equipment
The ceramic substrate contains carbon and contains the above ceramic substrate.
With electrodes as conductors inside the substrate
Between the electrodes and / or in the ceramic layer on the electrodes
The carbon concentration is determined by the amount of carbon in the ceramic layer below the electrode.
It is characterized by being lower than carbon concentration. That is, the semiconductor manufacturing / inspection apparatus of the present invention
For ceramic substrates, the words “car in the ceramic layer between the electrodes”
Carbon concentration in the ceramic layer where the boron concentration is below the electrode
Lower than carbon in the ceramic layer above the electrode
The concentration is higher than the carbon concentration in the ceramic layer below the electrode
Low) and between the electrodes and in the ceramic layer above the electrodes.
Carbon in the ceramic layer whose carbon concentration is below the electrode
Lower than the concentration.
No. According to the present invention, between the electrodes and / or
The carbon concentration in the ceramic layer on the electrode
Lower than the carbon concentration in the lower ceramic layer
As a result, the withstand voltage between the electrodes decreases in the high temperature range,
Increase of the leakage current can be prevented.(Examples 1, 3
And Example 2). In addition, the ceramic below the electrode
By increasing the carbon concentration in the
Suppresses the decrease in thermal conductivity to quickly raise the temperature of the ceramic substrate
Can be done. [0009] [0010] [0011] DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a semiconductor manufacturing / inspection apparatus.
The ceramic substrate is placed in contact with the semiconductor wafer
Or for holding and heating at regular intervals
A ceramic substrate for a semiconductor manufacturing / inspection device,
The ceramic substrate contains carbon, and the ceramic
While having electrodes as conductors inside the substrate,
Power between the electrodes and / or in the ceramic layer on the electrodes
The carbon concentration is determined by the amount of carbon in the ceramic layer below the electrode.
Characteristically lower than Bonn concentrationAnd A ceramic for a semiconductor manufacturing / inspection apparatus according to the present invention.
Substrate (hereinafter referred to as a ceramic substrate for semiconductor devices)
Means that the ceramic substrate contains carbon, and
The carbon concentration depends on the
In each part, various characteristics required in each part,
In other words, sinterability, concealment, thermal conductivity, volume resistivity, etc. are satisfied.
Hot play because the density is set to
(Ceramic heater), wafer prober or electrostatic chuck
Function required as a
You. That is, for example, the semiconductor manufacturing apparatus of the present invention
In a ceramic substrate, which is a type of ceramic substrate
An electrode for inducing a jack force (hereinafter referred to as an electrostatic electrode)
The electrostatic electrode,
The ceramic layer between and / or above the electrostatic electrodes (hereinafter
Below, called ceramic dielectric film)
The ceramic layer below the electrostatic electrode (hereinafter referred to as the lower ceramic
Lower than the carbon concentration in the
And the volume of the ceramic dielectric film at high temperature
It is possible to keep the withstand voltage high by suppressing the decrease in resistance.
The ceramic dielectric during use as an electrostatic chuck.
The dielectric breakdown of the body film can be prevented. Further, the plasma etching apparatus has an electrostatic chamber.
When incorporating a microphone, a high-frequency electrode (hereinafter referred to as
(Referred to below as RF electrode).
At the time, between RF electrodes embedded in the ceramic substrate or
Ceramic layer above RF electrode (ceramic dielectric film and
The carbon concentration in a part of the lower ceramic layer
Ceramic layer below F electrode (of lower ceramic layer
(Excluding the area where the RF electrode and resistance heating element are formed)
By setting the carbon concentration lower than that of
Suppresses drop in volume resistance of lamic dielectric film at high temperature
Thus, the withstand voltage can be kept high. Further, in the electrostatic chuck, the ceramic
The carbon concentration in the dielectric
By setting the carbon concentration higher than that of
Prevents thermal conductivity of lamic dielectric film from decreasing at high temperature
Silicon wafer placed on the electrostatic chuck.
Heating and cooling of the eha can be performed quickly. Also,
By adding carbon, the ceramic dielectric
Because the film can be blackened, the above ceramic dielectric
It is possible to hide the electrostatic electrode existing under the film. The amount of carbon is compared between the electrodes and
And / or the average of any five points of the ceramic layer above the electrode
The amount of carbon and the far side from the part where the electrode is formed
With the principal surface as the reference surface, 50% in the thickness direction from the reference surface
And the average carbon content at any five points in the area at
Compare. The electrodes are not limited to electrostatic electrodes and RF electrodes, but
The same applies to the guard electrode and ground electrode in the eha prober.
It is like. According to the ceramic substrate for a semiconductor device of the present invention,
Relatively high carbon content area / relative carbon content
The ratio of the small area is more than 1/1 and not more than 1000/1.
Desirably, particularly 1.2 / 1 to 500/1 is desirable. 1
Adjusting the difference larger than 000/1 is actually difficult
Because it is difficult. Further, a resistance heating element is provided in the ceramic substrate.
If the ceramic layer between the resistance heating element (hereinafter, heating element)
Layer) and the other parts of carbon
By setting lower than the concentration, the thermal conductivity at low temperature
Temperature can be secured at low temperatures.
To prevent the occurrence of variations in the surface temperature at the beginning of heating
I made it possible. FIGS. 8A and 8B show an example of a resistance heating element.
FIG. Between the resistance heating elements
Is a spiral resistance heating wire 8 as shown in FIG.
In the case of 5, the inside of the spiral (A), that is, the resistance heating element
85 inside the tubular space formed by connecting the outer edges
On the other hand, a plurality of spiral heating wires 85 are formed.
The top and bottom of the tubular body
Inside the space (B) formed by connecting
U. In addition, a flat resistance heating as shown in FIG.
In the case of the body 86, the uppermost parts of the two resistance heating elements 86
And the space formed by connecting the bottom
(B '). The resistance heating element is spread over the upper and lower layers.
If it is formed in the uppermost layer, it is formed between the uppermost layer and the lowermost layer.
This space is also referred to as between resistance heating elements. This definition is
The same applies to the case of. Also, the amount of carbon
The average carbon content and resistance of any five points between the resistance heating elements
From the heating element formation area to the front and back main surfaces of the ceramic substrate
Measure the average carbon content at any five points in all regions and compare
Compare. The ceramic substrate for a semiconductor device of the present invention is
When an anti-heating element is formed, the relative amount of carbon
The ratio of the large area / the area with relatively small carbon content is
More than 1/1 and not more than 1000/1 is desirable, especially 1.2
/ 1 to 500/1 is desirable. Greater than 1000/1
This is because it is practically difficult to adjust the difference. The above ceramic substrate contains carbon.
The thermal conductivity at high temperatures (above about 200 ° C)
Add crystalline carbon if you don't want it to go down
It is desirable to reduce the volume resistivity at high temperatures
If not, it is desirable to add amorphous carbon.
Good. Therefore, in some cases, both are added
This ensures that both volume resistivity and thermal conductivity are properly adjusted.
Can be adjusted. The crystallinity of carbon is
1550cm when measuring the vector^-1Nearby and 1333c
m^-1Can be determined by the size of the nearby peak
You. 1333cm^-1The larger the size of the peak near
And low crystallinity. A place where the ceramic substrate contains carbon.
In this case, the content is preferably 5 to 5000 ppm. Mosquito
When the content of carbon is less than 5 ppm, radiant heat is low.
At the same time, it is difficult to hide the electrodes.
On the other hand, if the carbon content exceeds 5000 ppm,
It becomes difficult to suppress densification and a decrease in volume resistivity. Carbon is added to the ceramic dielectric film
To do this, mix the raw material powder, resin, etc. with a solvent and mold
Easy to carbonize even when heated when manufacturing body
Resin, carbohydrate, etc.
May be performed by degreasing the molded body in a non-oxidizing atmosphere. Ma
In addition, carbonized by firing sucrose or acrylic binder
By heating carbohydrates and resins that are easy to
And may be added. In addition, crystalline
Carbon black and graphite are ground and powdered
A thing may be used. The acrylic resin binder is separated according to the acid value.
Since the ease of disassembly is different, the acid value changes for each green sheet.
By changing the amount, the amount of carbon can be adjusted. For example,
Acrylic resin with acid value of 0.3-1.0 KOHmg / g
Binder is easy to decompose, acid of 5-17KOHmg / g
Acrylic resin binder with low valency is not easily decomposed. Also,
The amount of carbon is adjusted by adjusting the carbon and
By changing the amount of gender for each green sheet
Alternatively, the conductor is made of a high melting point metal such as Mo or W.
In an inert atmosphere at 1500-2000 ° C under normal pressure
By heating, Mo and W react with carbon
The adjustment may be performed by adjusting the amount of carbon. The ceramic substrate for a semiconductor device of the present invention
The ceramic material to be formed is not particularly limited,
For example, nitride ceramic, carbide ceramic, oxide
Ceramics and the like can be mentioned. As the above-mentioned nitride ceramic, metal nitride
Ceramics, such as aluminum nitride, silicon nitride
Element, boron nitride, titanium nitride and the like. Also on
As the carbide ceramic, metal carbide ceramic,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples include tantalum carbide and tungsten carbide. As the above oxide ceramic, metal oxide
Ceramics, such as alumina, zirconia, koji
And mullite. These ceramics
May be used alone or in combination of two or more. Among these ceramics, nitride ceramics
Mick and carbide ceramics compared to oxide ceramics
All desirable. This is because the thermal conductivity is high. Also, nitriding
Aluminum nitride is the most suitable
You. Because the thermal conductivity is the highest at 180 W / m · K
You. In the present invention, a matrix is formed.
It is desirable that the sintered body contains a sintering aid. So
Alkaline metal oxides, alkaline earths
Metal oxides and rare earth oxides can be used.
Among these sintering aids, in particular, CaO, Y_TwoO_Three, N
a_TwoO, Li_TwoO, Rb_TwoO_ThreeIs preferred. These include
The amount is desirably 0.1 to 10% by weight. Also,
Alumina may be used. Further, a ceramic for a semiconductor device according to the present invention is provided.
In the substrate where the concentration of carbon is high,
The brightness is N based on the value of JIS Z 8721.
It is desirable to contain carbon so as to be 4 or less.
No. The one with this level of lightness is effective for radiant heat and concealment
Because it is excellent. Here, the lightness N is an ideal black lightness.
0, the ideal white lightness is 10, and these black light
Between color and white lightness, the perception of the brightness of that color is equal
Each color is divided into 10 so that
It is displayed. And the actual measurement is N0-N
The comparison is made with the color chart corresponding to No. 10. Decimal point in this case
The first place is 0 or 5. The ceramic substrate for a semiconductor device of the present invention
Does not contain any pores or, if there are,
It is desirable that the pore diameter of the maximum pore is 50 μm or less.
No. If there are no pores, the withstand voltage at high temperatures is particularly high.
When pores are present, the fracture toughness value increases.
Become. Or to either of the design for this purpose, the required characteristics considered
It may be determined in consideration. Fracture toughness due to presence of pores
Is not clear why, but crack extension
It is presumed that it is stopped by a hole. In the above-mentioned ceramic substrate for a semiconductor device,
It is desirable that the maximum pore size be 50 μm or less.
No. If the pore size exceeds 50μm, the temperature will be high, especially below 200 ° C
Because it is no longer possible to ensure the above withstand voltage characteristics.
is there. The maximum pore diameter is desirably 10 μm or less. 200
This is because the amount of warpage at a temperature of not less than ° C is small. In addition, the ceramic substrate for a semiconductor device
The porosity is desirably 5% or less. Porosity of 5
%, The number of pores increases and the pore diameter increases.
The pores can easily communicate with each other,
This is because the pressure drops. The porosity and the maximum pore diameter are determined by the sintering process.
Adjust by pressure time, pressure, temperature, additives such as SiC and BN
I do. Pores are introduced in SiC and BN to prevent sintering
Can be done. The measurement of the pore diameter of the maximum pore was performed using five samples.
The surface is mirror polished, 2000 to 5000 times
By photographing the surface with an electron microscope at 10 magnifications
Do. Then select the largest pore size in the photograph taken.
The average of 50 shots is defined as the maximum pore diameter. The porosity is measured by the Archimedes method.
You. Pulverized sintered body and pulverized in organic solvent or mercury
Put the material in, measure the volume, and calculate the true ratio from the weight and volume of the ground material.
Calculate porosity from true specific gravity and apparent specific gravity
It is. Thickness of ceramic substrate for semiconductor device
Is preferably 50 mm or less, particularly preferably 25 mm or less. In particular
Thickness of ceramic substrate for semiconductor device exceeds 25mm
And the heat capacity of the ceramic substrate increases,
When heating and cooling are provided with control means, the heat capacity
As a result, the temperature followability is reduced. In addition, the existence of pores
The problem of warpage caused by the presence is that the thickness exceeds 25 mm
This is because it is unlikely to occur with a thick ceramic substrate.
Particularly, 5 mm or less is optimal. Note that the thickness is 1 mm or less.
Above is desirable. The ceramic substrate is 0.1 to 5% by weight.
Of oxygen. 0.1% by weight
When full, the withstand voltage cannot be secured, and conversely, 5% by weight
If it exceeds, the oxide withstands voltage
This is because the pressure still drops. Also, the amount of oxygen
If it exceeds 5% by weight, the thermal conductivity decreases and the temperature rise and fall characteristics become poor.
It is because it falls. The ceramic substrate for a semiconductor device of the present invention
In the board, a silicon wafer is placed on a ceramic substrate
In addition to placing it in contact with the surface,
Supported with support pins and fixed between the ceramic substrate
In some cases. Therefore, the ceramic
Insert the support pins into the through holes in the
Hold and raise and lower the support pins to move
Receiving a recon wafer or silicon wafer
Placed on a backing substrate or supporting a silicon wafer.
It can also be heated. Also, on the bottom of the ceramic substrate
Has a heating element, and the surface of the heating element is covered with metal.
A layer may be provided. Also, a bottomed hole is provided
If so, insert a thermocouple here. Silicon wafer
C is heated on the wafer heating surface side. The diameter of the ceramic substrate is 200 mm or less.
Above is desirable. Especially 12 inches (300mm) or more
Is desirable. Becoming the mainstream of next-generation semiconductor wafers
Because. Also, the problem of warpage caused by the presence of pores
Occurs on a ceramic substrate with a diameter of 200 mm or less.
Because it is difficult. Ceramic substrate for semiconductor device of the present invention
Plates can be used in semiconductor manufacturing and semiconductor inspection equipment.
Ceramic substrate used, as a specific device
Are, for example, electrostatic chucks, wafer probers,
Rate (ceramic heater), susceptor, etc.
You. FIG. 1 shows a ceramic for a semiconductor device according to the present invention.
The embodiment of the electrostatic chuck which is an embodiment of the substrate is modeled.
FIG. 2 is a longitudinal sectional view schematically shown, and FIG.
FIG. 3 is a sectional view taken along line AA of the electric chuck, and FIG.
FIG. 2 is a sectional view taken along line BB of the electrostatic chuck shown in FIG.
You. The electrostatic chuck 101 has a circular shape in plan view.
Chuck positive electrode electrostatic layer 2
And an electrostatic electrode layer comprising a chuck negative electrode electrostatic layer 3 are embedded.
Have been. Ceramic dielectric film on top of this electrostatic electrode layer
The ceramic layer called No. 4 is as thin as 50 to 1500 μm.
No. The silicon wafer 9 is placed on the electrostatic chuck 101
Placed and grounded. As shown in FIG. 2, the chuck positive electrode electrostatic layer
2 includes a semicircular arc portion 2a and a comb tooth portion 2b,
The negative electrode electrostatic layer 3 also has a semicircular portion 3a and a comb-tooth portion 3b.
These chuck positive electrode electrostatic layer 2 and chuck
The negative electrode electrostatic layer 3 intersects the comb teeth portions 2b and 3b.
These chuck positive electrode electrostatic layers 2 and
The DC power supply +
Side and-side are connected, and the DC voltage V_TwoIs applied
It has become. On the other hand, a ceramic substrate 1
In order to control the temperature of the con-wafer 9, FIG.
The concentric resistance heating element 5 as shown in plan view is provided.
External terminal pins 6 are provided at both ends of the resistance heating element 5.
Connected, fixed, voltage V₁Is applied
You. Although not shown in FIGS.
As shown in FIG. 3, a temperature measuring element is inserted into the work board 1.
To support the bottomed hole 11 and the silicon wafer 9
Through hole 1 for inserting a support pin (not shown) to be inserted
2 are formed. The resistance heating element 5 is a ceramic heating element.
It may be formed on the bottom surface of the work substrate. When the electrostatic chuck 101 is operated,
Is applied to the chuck positive electrode electrostatic layer 2 and the chuck negative electrode electrostatic layer 3.
DC voltage V_TwoIs applied. This allows the silicon wafer
9 is a chuck positive electrostatic layer 2 and a chuck negative electrostatic layer 3
Due to the electrostatic action of these electrodes a ceramic dielectric
It is adsorbed and fixed via the membrane 4. This
Thus, the silicon wafer 9 is fixed on the electrostatic chuck 101.
After that, the silicon wafer 9 is subjected to various processes such as CVD.
Is performed. The above-mentioned electrostatic chuck has a structure in which an electrostatic electrode layer and a resistance generating element are connected.
And a heating element, for example, as shown in FIGS.
It has a configuration. In the following, the electrostatic chip will be described.
Each of the components that make up the jack is
What is not described in the description of the board
I will go. [0048] The ceramic material constituting the electrostatic chuck is provided.
Is the conductor film the same material as the ceramic substrate for electrostatic chuck?
However, in order to achieve the desired function,
As shown, the carbon concentration is different from the rest.
You. That is, at a high temperature of the ceramic dielectric film
Suppress the drop in volume resistivity, keep its withstand voltage high,
Even if the ceramic dielectric film is thinner than normal,
Prevents dielectric breakdown during use as an electric chuck
If desired, the carbon concentration in the ceramic dielectric film
To the carbon concentration in the ceramic layer below the electrostatic electrode.
It is desirable to set lower than the degree. Further, the ceramic dielectric film at a high temperature
To prevent a decrease in thermal conductivity and hide the electrostatic electrode
Indicates the carbon concentration in the ceramic dielectric film,
Than the carbon concentration in the ceramic layer below the electrostatic electrode
It is desirable to set high. In other words, depending on the required characteristics
Thus, the carbon amount is appropriately adjusted. The thickness of the ceramic dielectric film is 50 to 50.
It is desirable to be 5000 μm. Above ceramic invitation
If the thickness of the conductor film is less than 50 μm, the film thickness is too thin
Voltage cannot be obtained and the silicon wafer is placed
The dielectric breakdown of the ceramic dielectric film
On the other hand, the thickness of the ceramic dielectric film is 50
If it exceeds 00 μm, the distance between the silicon wafer and the electrostatic electrode
The ability to adsorb silicon wafers is low due to separation
Because it becomes worse. Ceramic dielectric film thickness
Is more preferably 100 to 1500 μm. An electrostatic electrode formed in a ceramic substrate;
For example, sintering of metal or conductive ceramic
Body, metal foil and the like. As a metal sintered body, tan
Gusten, at least one selected from molybdenum
Are preferred. Metal foil is the same material as metal sintered body
Desirably, it consists of These metals are relatively oxidized
This is because they have sufficient conductivity as electrodes.
Tungsten and metal
Use at least one selected from carbides of butene
be able to. FIGS. 4 and 5 show another electrostatic chuck.
FIG. 4 is a horizontal cross-sectional view schematically illustrating the electrostatic electrode in FIG.
In the electrostatic chuck 20 shown in FIG.
The chuck positive electrode electrostatic layer 22 and the chuck negative electrode
An electric layer 23 is formed, and the electrostatic chuck shown in FIG.
Is a chip having a shape obtained by dividing a circle into four parts inside a ceramic substrate 1.
Jack positive electrode electrostatic layers 32a and 32b and chuck negative electrode electrostatic layer
33a and 33b are formed. In addition, two positive electrode static
Electric layers 22a and 22b and two chuck negative electrostatic layers 3
3a and 33b are formed to cross each other.
You. In addition, an electrode in the form of a divided electrode such as a circle is formed.
The number of divisions is not particularly limited,
And the shape is not limited to a sector. The resistance heating element is, as shown in FIG.
It may be provided inside the substrate,
It may be provided on the surface. When installing a resistance heating element,
Air, etc., as a cooling means in the support container into which the jack is fitted
May be provided. As the resistance heating element, for example, metal or
Sintered conductive ceramics, metal foils, metal wires, etc.
It is. Tungsten, molybdenum
At least one selected from These metals
Is relatively resistant to oxidation and has sufficient resistance to generate heat
This is because that. As the conductive ceramic, a tongue is used.
At least one selected from carbides of stainless steel and molybdenum
Seeds can be used. In addition, ceramic substrates
When forming a resistance heating element on the bottom, use a metal sintered body.
Noble metals (gold, silver, palladium, platinum), nickel
It is desirable to use Specifically, silver, silver-palladium
For example. Used for the above metal sintered body
The metal particles used are spherical, scaly, or spherical.
A flaky mixture can be used. The metal oxide is added to the metal sintered body.
Is also good. The above metal oxides are used for ceramic bases.
This is for bringing the plate and the metal particles into close contact. The above metal oxide
Improves the adhesion between the ceramic substrate and the metal particles
The reason is not clear, but the surface of the metal particles is slightly
An oxide film is formed, and the ceramic substrate
Of course, even if it is a non-oxide ceramic,
An oxide film is formed on the surface. Therefore, this oxide film
Is sintered on the surface of the ceramic substrate via the metal oxide.
The metal particles adhere to the ceramic substrate
It is thought that there is not. As the metal oxide, for example, oxidized
Lead, zinc oxide, silica, boron oxide (B_TwoO_Three), Al
At least one selected from Mina, Yttria and Titania
Species are preferred. These oxides have the resistance value of the resistance heating element.
Between the metal particles and the ceramic substrate without increasing the
This is because adhesion can be improved. The metal oxide is 100 parts by weight of metal particles.
0.1 parts by weight or more and less than 10 parts by weight
desirable. By using a metal oxide in this range,
Resistance is not too high, metal particles and ceramic substrate
This is because the adhesiveness with the adhesive can be improved. In addition, lead oxide, zinc oxide, silica,
Udine (B_TwoO_Three), Alumina, yttria, titania
The ratio is based on 100 parts by weight of the total amount of the metal oxide.
1 to 10 parts by weight of lead oxide and 1 to 30 parts by weight of silica
Parts by weight, 5 to 50 parts by weight of boron oxide, and 20 to 7 parts of zinc oxide
0 parts by weight, alumina 1 to 10 parts by weight, yttria 1
-50 parts by weight and titania of 1-50 parts by weight are preferred.
However, the amount should not exceed 100 parts by weight.
It is desirable to be adjusted. These ranges are particularly
This is because the adhesion to the substrate can be improved. A resistance heating element is provided on the bottom surface of the ceramic substrate
In this case, the surface of the resistance heating element 15 is covered with a metal layer 150.
Desirably, it is overturned. The resistance heating element 15 is made of metal
It is a sintered body of particles.
The resistance value changes due to oxidation of. So, the surface
By coating with the metal layer 150, oxidation can be prevented.
You can do it. The thickness of the metal layer 150 is 0.1 to 10 μm
Is desirable. Do not change the resistance of the resistance heating element.
Is within the range that can prevent oxidation of the resistance heating element
It is. The metal used for coating is a non-oxidizing metal
I just need. Specifically, gold, silver, palladium, platinum,
At least one selected from nickel is preferred.
Among them, nickel is more preferable. The resistance heating element
A terminal is required to connect to the
Attach to the resistance heating element through the field, but nickel is solder
This is because heat diffusion is prevented. The connection terminal
Can be used. The resistance heating element is formed inside the heater plate.
The surface of the resistance heating element is not oxidized.
Therefore, no coating is required. The resistance heating element is formed inside the heater plate.
If it is formed, even if part of the surface of the resistance heating element is exposed
Good. As a metal foil used as a resistance heating element
Is put on nickel foil and stainless steel foil by etching etc.
It is desirable that the resistance heating element is formed by forming a resistor. pattern
Metal foil may be bonded with a resin film, etc.
No. As the metal wire, for example, tungsten wire, molybdenum
Den wire and the like. Table of ceramic substrate for semiconductor device of the present invention
A conductor is disposed on the surface and inside, and the conductor
But at least the guard electrode or the ground electrode
In other cases, the ceramic substrate
The plate functions as a wafer prober. FIG. 6 shows a ceramic for a semiconductor device according to the present invention.
1 schematically shows a wafer prober which is an embodiment of a substrate.
FIG. In this wafer prober 201,
A concentric groove 47 is formed on the surface of the ceramic substrate 43 having the shape.
Is formed, and a silicon wafer is partially formed in the groove 47.
Is provided with a plurality of suction holes 48 for sucking
Most of the ceramic substrate 43 including the groove 47 has a silicon wafer.
Chuck top conductor layer 42 for connection to the electrode of EHA
Are formed in a circular shape. On the other hand, the bottom of the ceramic substrate 43 is
In order to control the temperature of the recon wafer,
A heating element 49 having a concentric circular shape in plan view as shown is provided.
Both ends of the heating element 49 are connected to external terminal pins (not shown).
Is connected and fixed. Also, the ceramic substrate 4
Inside 3, remove stray capacitors and noise
Guard electrode 45 and ground electrode in grid shape in plan view
46 are provided. Guard electrode 45 and ground electrode
The material of the pole 46 may be the same as that of the electrostatic electrode. The thickness of the chuck top conductor layer 42 is as follows.
1 to 20 μm is desirable. If it is less than 1 μm, the resistance is high
Does not work as an electrode because it is too large, on the other hand, exceeds 20 μm
Is easy to peel due to the stress of the conductor and the conductor
It is. As the chuck top conductor layer 42, for example,
For example, copper, titanium, chromium, nickel, precious metals (gold, silver,
Refractory metals such as platinum, tungsten, molybdenum, etc.
At least one metal selected from the group consisting of
Wear. In the wafer prober having such a configuration, the
A silicon wafer with an integrated circuit on it
Later, a probe card with tester pins
Pressing the lead and applying voltage while heating and cooling
Tests can be conducted. Next, the ceramic substrate for a semiconductor device of the present invention will be described.
Regarding a method for manufacturing a plate, a method for manufacturing an electrostatic chuck is taken as an example.
Then, description will be made based on the cross-sectional views shown in FIGS.
I do. (1) Next, oxide ceramic, nitride ceramic, charcoal
Ceramic powders such as
Fat binder (Mitsui Chemicals SA-545 series acid value 0.
5. Kyoeisha brand name KC-600 series Acid value 17
) And a solvent to obtain a green sheet 50.
You. Depending on the desired properties, the acrylic binder
Adjust the volume. As the ceramic powder mentioned above,
For example, use aluminum nitride, silicon carbide, etc.
Sintering aids such as yttria if necessary
May be added. It should be noted that an electrostatic electrode layer printed body 51 described later has a shape.
Several or one sheets to be laminated on the formed green sheet
Green sheet 55 becomes the ceramic dielectric film 4
Because it is a layer, depending on the purpose,
Select the amount of acrylic binder. First, the ceramic
Manufacturing a substrate, forming an electrostatic electrode layer on it,
It is also possible to form a ceramic dielectric film on it
Wear. The binder is an acrylic binder.
, Ethyl cellulose, butyl cellosolve, polyvinyl
At least one selected from alcohols is desirable.
Further, as the solvent, α-terpineol, glycol
At least one selected from the group consisting of Mix these
The paste obtained by combining is sheeted by the doctor blade method.
The green sheet 50 is formed by molding into a shape. If necessary, a green sheet 50
Fills through holes and thermocouples through which the support pins of the con-wafer are inserted
An indentation can be provided. Through holes and recesses
It can be formed by punching or the like. Green sea
The thickness of the gate 50 is preferably about 0.1 to 5 mm. Next, the green sheet 50 has an electrostatic electrode layer or
Print conductor paste to be the resistance heating element. Printing is a group
Considering the shrinkage of the lean sheet 50,
Ratio so that the electrostatic electrode layer print is obtained.
51, a resistance heating element layer printed body 52 is obtained. Printed body is conductive
Print conductive paste containing conductive ceramic, metal particles, etc.
It forms by doing. The conductivity contained in these conductor pastes
As ceramic particles, tungsten or molybdenum
Carbides are best. Hardly oxidized, low thermal conductivity
This is because it is difficult to drop. Also, as metal particles,
For example, tungsten, molybdenum, platinum, nickel, etc.
Can be used. Average particle size of conductive ceramic particles and metal particles
The diameter is preferably 0.1 to 5 μm. These particles are large
It is difficult to print the conductor paste even if it is too small or too small
Because. [0078] Such pastes include metal particles.
85 to 97 parts by weight of conductive ceramic particles, acrylic
System, ethyl cellulose, butyl cellosolve and polyvinyl chloride
At least one binder selected from nyl alcohol
1.5 to 10 parts by weight, α-terpineol, glyco
, Ethyl alcohol and butanol.
Prepared by mixing 1.5 to 10 parts by weight of at least one solvent
The best paste for conductors. Furthermore, punching
Fill the conductor paste into the hole formed
To obtain the prints 53 and 54 of the print. Next, as shown in FIG.
A green sheet 50 having 1, 52, 53, 54;
The green sheet 50 having no printed body is laminated. Stillness
On the green sheet on which the electrode layer printed body 51 is formed
Stacks several or one green sheet 55.
Green sheet 5 having no printed body on the side where the resistance heating element is formed
The reason for stacking 0 is that the end face of the through hole is exposed and
Prevents oxidation during baking to form the heating element
That's because. If the end of the through hole is exposed
If firing for forming a resistance heating element is performed, nickel
Metal that is difficult to oxidize must be sputtered.
More preferably, it is covered with Au-Ni gold brazing.
Is also good. (2) Next, as shown in FIG.
The layer is heated and pressurized, and inert gas (nitrogen, Al
Gon etc.) Atmosphere, 300 ~ 600 ℃, 0.5 ~ 15: 00
During the heating, the binder is degreased and thermally decomposed. This condition
The amount of carbon may be adjusted by adjustment. Grease after degreasing
And sinter the conductive sheet and the conductive paste. The heating temperature is 1000 to 2000 ° C.
Is 100-200kg / cm^TwoAre preferred.
Heat and pressurization are performed in an inert gas atmosphere. Inert moth
As the source, argon, nitrogen, etc. can be used
You. In this process, the through holes 16, 17 and the chuck
Electrostatic layer 2, chuck negative electrode layer 3, resistance heating element 5, etc.
It is formed. (3) Next, as shown in FIG.
Bag holes 13 and 14 are provided for connection of external terminals. Blind hole 1
At least a part of the inner wall of each of the three and fourteen is made conductive.
The inner wall made conductive is the chuck positive electrode electrostatic layer 2,
Connected to the negative electrode electrostatic layer 3, the resistance heating element 5, etc.
Is desirable. (4) Finally, as shown in FIG.
External terminals 6 and 18 are provided in blind holes 13 and 14 via gold brazing.
I can. Further, if necessary, a bottomed hole 12 is provided,
A thermocouple can be embedded inside. The solder is silver-lead, lead-tin, bismuth-tin
Such alloys can be used. The thickness of the solder layer
Preferably, the thickness is 0.1 to 50 μm. Solder connection
This is because the range is sufficient to secure. In the above description, the electrostatic chuck 101
(See FIG. 1) as an example, but manufacture a wafer prober
In the case, for example, as in the case of the electrostatic chuck,
Manufactures a ceramic substrate with a resistance heating element embedded in it.
After that, a groove is formed on the surface of the ceramic substrate, and a
Apply metallization and plating to form a metal layer
Just do it. [0086] The present invention will be described in more detail below. (Example 1) Production of electrostatic chuck (see FIG. 7) (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size
1.1 μm) 100 parts by weight, yttria (average particle size:
0.4 μm) 4 parts by weight, acrylic binder (Mitsui Chemicals)
SA-545 series Acid value 0.5) 11.5 parts by weight,
0.5 parts by weight of dispersant, 1-butanol and ethanol
Paste mixed with 53 parts by weight of alcohol
Using the doctor blade method
A 0.47 mm green sheet 50 was obtained. Separately, acrylic is used as a binder.
Binder (Kyoeisha brand name KC-600 series acid
17) Except that 11.5 parts by weight were used,
Blended in the same ratio, and the doctor blade
The green sheet with a thickness of 0.47 mm
To obtain 55. (2) Next, these green sheets 5
After drying 0, 55 at 80 ° C for 5 hours, processing is required
1.8m diameter for green sheet by punching
m, 3.0 mm, 5.0 mm
A part to be a through hole to be inserted, for connecting to an external terminal
A portion to be a through hole was provided. (3) Tungsten powder having an average particle diameter of 1 μm
-Bite particles 100 parts by weight, acrylic binder 3.0
Parts by weight, 3.5 parts by weight of α-terpineol solvent and
0.3 parts by weight of powder was mixed to prepare conductor paste A.
Was. 100 weight of tungsten particles having an average particle diameter of 3 μm
Parts, 1.9 parts by weight of acrylic binder, α-terpineo
3.7 parts by weight of dispersant and 0.2 parts by weight of dispersant
Thus, a conductor paste B was prepared. This conductor paste A
Screen printing on green sheet, conductor pace
Layer was formed. The printing pattern is a concentric pattern
Was. In addition, the other green sheet has the static shape shown in FIG.
A conductive paste layer composed of an electrode pattern was formed. Further, a through hole for connecting an external terminal is provided.
The conductive paste B was filled in the through hole for the hole. From resistance
The green sheet 50 on which the pattern of the heat is formed
Green sheet without tungsten paste printing
Layer 50 on the upper side (heating surface) and 13 on the lower side
And a conductive paste layer consisting of an electrostatic electrode pattern
Is laminated on the green sheet 50 printed with
Green sea without tungsten paste printed on
Are stacked at 130 ° C. and 80 kg / c.
m^TwoTo form a laminate (FIG. 7).
(A)). (4) Next, the obtained laminated body is
Medium, degreasing at 600 ° C for 5 hours, 1890 ° C, pressure 150
kg / cm^TwoHot press for 3 hours
An aluminum halide plate was obtained. This is a 230mm disc
Cut out into a shape, the thickness of the dielectric layer is 300 μm, and the thickness is
6 μm, 10 mm wide resistance heating element 5 and 10 μm thick
Chuck positive electrode electrostatic layer 2 and chuck negative electrode electrostatic layer 3
(FIG. 7B). (5) Next, the plate obtained in (4) is
After polishing with a diamond grindstone, a mask is placed and Si
Bottom hole for thermocouple on the surface by blast treatment with C etc.
(Diameter: 1.2 mm, depth: 2.0 mm). (6) Further, through holes are formed.
The portions that are present are cut out to form blind holes 13 and 14 (FIG. 7).
(C)) The holes 13 and 14 are made of gold made of Ni-Au.
Using a wax, heat and reflow at 700 ° C to make Kovar
The external terminals 6 and 18 were connected (FIG. 7D). In addition,
External terminals are connected by a tungsten support at three points
Is desirable. Connection reliability can be ensured
This is because that. (7) Next, a plurality of thermoelectric devices for controlling temperature
The pair is embedded in the bottomed hole, and an electrostatic chuck having a resistance heating element
Completed the production of (Example 2) Manufacturing of electrostatic chuck (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size
1.1 μm) 100 parts by weight, yttria (average particle size:
0.4 μm) 4 parts by weight, acrylic binder (manufactured by Kyoeisha)
Product name KC-600 series Acid value 17) 11.5 weight
Parts, 0.5 parts by weight of a dispersant, and 1-butanol and ethanol
Mixed with 53 parts by weight of alcohol
Using a strike, perform molding by the doctor blade method,
A green sheet 50 having a thickness of 0.47 mm was obtained. Separately, acrylic is used as a binder.
Binder (Mitsui Chemicals SA-545 series acid value 0.
5) Except for using 11.5 parts by weight,
And then use the doctor blade method as described above.
Green sheet with a thickness of 0.47mm
55 was obtained. In this embodiment, the structure of the binder is
It is the reverse of 1. (2) Next, these green sheets 5
After drying 0, 55 at 80 ° C for 5 hours, processing is required
1.8m diameter for green sheet by punching
m, 3.0 mm, 5.0 mm
Portion to be inserted through hole, for connecting with external terminal
A portion to be a through hole was provided. (3) A tungsten powder having an average particle diameter of 1 μm
-Bite particles 100 parts by weight, acrylic binder 3.0
Parts by weight, 3.5 parts by weight of α-terpineol solvent and
0.3 parts by weight of powder was mixed to prepare conductor paste A.
Was. 100 weight of tungsten particles having an average particle diameter of 3 μm
Parts, 1.9 parts by weight of acrylic binder, α-terpineo
3.7 parts by weight of dispersant and 0.2 parts by weight of dispersant
Thus, a conductor paste B was prepared. This conductor paste A
Screen printing on green sheet, conductor pace
Layer was formed. The printing pattern is a concentric pattern
Was. In addition, the other green sheet has the static shape shown in FIG.
A conductive paste layer composed of an electrode pattern was formed. Further, a through hole for connecting an external terminal is provided.
The conductive paste B was filled in the through hole for the hole. From resistance
The green sheet 50 on which the pattern of the heat is formed
Green sheet without tungsten paste printing
Layer 50 on the upper side (heating surface) and 13 on the lower side
And a conductive paste layer consisting of an electrostatic electrode pattern
Is laminated on the green sheet 50 printed with
Green sea without tungsten paste printed on
Are stacked at 130 ° C. and 80 kg / c.
m^TwoTo form a laminate (FIG. 7).
(A)). (4) Next, the obtained laminate was placed in nitrogen gas.
Medium, degreasing at 600 ° C for 5 hours, 1890 ° C, pressure 150
kg / cm^TwoHot press for 3 hours
An aluminum halide plate was obtained. This is a 230mm disc
Cut out into a shape, the thickness of the dielectric layer is 300 μm, and the thickness is
6 μm, 10 mm wide resistance heating element 5 and 10 μm thick
Chuck positive electrode electrostatic layer 2 and chuck negative electrode electrostatic layer 3
(FIG. 7B). (5) Next, the plate obtained in (4) is
After polishing with a diamond grindstone, a mask is placed and Si
Bottom hole for thermocouple on the surface by blast treatment with C etc.
(Diameter: 1.2 mm, depth: 2.0 mm). (6) Further, through holes are formed
The portions that are present are cut out to form blind holes 13 and 14 (FIG. 7).
(C)) The holes 13 and 14 are made of gold made of Ni-Au.
Using a wax, heat and reflow at 700 ° C to make Kovar
The external terminals 6 and 18 were connected (FIG. 7D). In addition,
External terminals are connected by a tungsten support at three points
Is desirable. Connection reliability can be ensured
This is because that. (7) Next, a plurality of thermoelectric devices for controlling temperature
The pair is embedded in the bottomed hole, and an electrostatic chuck having a resistance heating element
Completed the production of (Embodiment 3) Electrostatic chuck In addition to providing five layers of RF electrodes between the resistance heating element and the electrostatic electrodes
Manufactured an electrostatic chuck in the same manner as in Example 1. What
The RF electrode is grid-like and has the same paste as the electrostatic electrode
Was formed by printing. (Example 4) Hot plate (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size
1.1 μm) 100 parts by weight, yttria (average particle size:
0.4 μm) 4 parts by weight, acrylic binder (manufactured by Kyoeisha)
Product name KC-600 series Acid value 17) 11.5 weight
Parts, 0.5 parts by weight of a dispersant, and 1-butanol and ethanol
Mixed with 53 parts by weight of alcohol
Using a strike, perform molding by the doctor blade method,
A green sheet having a thickness of 0.47 mm was obtained. (2) Next, these green sheets were
After drying at 0 ° C for 5 hours, green sea
1.8mm, 3.0m in diameter by punching
Penetration through a 5.0 mm semiconductor wafer support pin
Holes, through holes for connecting to external terminals
Is provided. (3) Tungsten powder having an average particle diameter of 1 μm
-Bite particles 100 parts by weight, acrylic binder 3.0
Parts by weight, 3.5 parts by weight of α-terpineol solvent and
0.3 parts by weight of powder was mixed to prepare conductor paste A.
Was. This conductive paste A is screened on a green sheet
Printing was performed by printing to form a conductor paste layer. Print putter
Is an electrostatic electrode pattern having the shape shown in FIG. Sa
In addition, through holes for through holes for connecting external terminals
The hole was filled with the conductive paste A. Also, the surface green
After forming a groove for the resistance heating element on the sheet,
Install the resistance heating element according to the method described below, and
The rate was manufactured. FIGS. 9A to 9E show the present embodiment.
FIG. 3 is a cross-sectional view schematically illustrating a manufacturing process of a hot plate.
You. (4) The green sheet 90 having the grooves 98 formed thereon is black.
Put it in a lead mold, and insert a tungsten wire 95 into the groove 98.
Into a spiral shape (cross-sectional diameter 0.5mm)
(FIGS. 9 (a) and 9 (b)).
Minium powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm) 1
00 parts by weight, 4 parts by weight of yttria (average particle size 0.4 μm)
Part and acrylic resin binder (Kyoeisha brand name K
C-600 series Acid value 17) 11.5 parts by weight
The mixture is placed in a mold (FIG. 9 (c)),
Medium, 1890 ° C, pressure 150kg / cm^TwoPressurized
(FIG. 9D). (5) Thereafter, the mixture was further added with nitrogen at normal pressure.
Heated at 800 ° C for 15 hours to form a tungsten wire
Reaction between carbon and ceramic between resistance heating elements 95
The amount of carbon inside has been reduced. Obtained in this way
Both surfaces of the sintered body were polished to obtain a hot plate 100
(FIG. 9 (e)). (Comparative Example 1) All the green sheets are made of aluminum nitride powder
100 parts by weight, manufactured by Yamaha, average particle size 1.1 μm, it
Rear (average particle size: 0.4 μm) 4 parts by weight, acrylic
(Kyoeisha brand name KC-600 series acid value 1
7) 11.5 parts by weight, 0.5 parts by weight of dispersant and 1-butane
53 parts by weight of alcohol consisting of ethanol and ethanol
Using the doctor blade method
Except that it was obtained by molding, the procedure was the same as in Example 1.
To manufacture an electrostatic chuck. The green sheet thickness
The height is 0.47 mm. (Comparative Example 2) All the green sheets are made of aluminum nitride powder
100 parts by weight, manufactured by Yamaha, average particle size 1.1 μm, it
Rear (average particle size: 0.4 μm) 4 parts by weight, acrylic
(Mitsui Chemicals SA-545 series acid value 0.5)
11.5 parts by weight, 0.5 parts by weight of dispersant and 1-butano
Of alcohol consisting of alcohol and ethanol
Molding by doctor blade method using combined paste
Was performed in the same manner as in Example 1 except that the static electricity was obtained.
Electric chuck was manufactured. The thickness of the green sheet is
0.47 mm. (Comparative Example 3) Step (5) of Example 4 (that is, application at 1800 ° C. under normal pressure)
Same as Example 4 except that the step of performing heat was not performed
To produce a hot plate. [0113] Examples 1 to 4 and
And hot plates and resistance heating elements of Comparative Examples 1 to 3, R
An electrostatic chuck having an F electrode is formed by combining a layer above the electrode with the electrode
Divided into lower layers and containing carbon by the following method.
Measure weight, volume resistivity, thermal conductivity, and leakage current
Specified. The results are shown in Table 1. Evaluation method (1) Measurement of carbon content Crush the sintered body and heat it at 500-900 ° C
This was performed by collecting the generated COx gas. (2) Measurement of volume resistivity 10m diameter by cutting ceramic substrate
m, 3mm thick, cut into 3 terminals (main electrode, counter electrode)
Electrode, guard electrode), apply DC voltage and charge for 1 minute.
The current flowing through the digital electrometer after charging
Read (I), determine the resistance (R) of the sample, and determine the resistance (R)
The following formula is used to calculate the volume resistivity (ρ) from the sample and the dimensions of the sample.
It was calculated in (1). [0116] (Equation 1) In the above formula (1), t is the thickness of the sample.
(Mm). S is calculated by the following formula (2) and
And given by (3). [0118] (Equation 2) [0119] (Equation 3)Note that the above equations (2) and (3)
And D₁Is the diameter of the main electrode, D_TwoIs the inner diameter of the guard electrode
(Diameter), and in this embodiment, D₁= 1.45
cm, D_Two= 1.60 cm. (3) Measurement of leak current 1 kV is applied between the originally insulated electrostatic electrodes,
Test the leak current at ℃ by using a pressure tester (TOS manufactured by Kikusui Electronics
-5051) or Ultra High Register (Advan
It was measured using R8340 manufactured by Test Corporation. (4) Measurement of thermal conductivity a. Used equipment Rigaku laser flash method thermal constant measurement device LF / TCM-FA8510B b. Test condition Temperature: 25 ° C, 400 ° C Atmosphere: vacuum c. Measuring method ・ Temperature detection in specific heat measurement uses silver paste on the back of the sample.
The measurement was performed using a thermocouple (platinel) adhered to the above. ・ For room temperature specific heat measurement, a light receiving plate (glassy
Carbon) bonded with silicone grease
The specific heat (Cp) of the sample was calculated according to the following formula (4).
I asked. [0123] (Equation 4) In the above equation (4), ΔO is the input
The energy, ΔT, is the saturation value of the temperature rise of the sample, Cp
_{G. FIG. C}Is the specific heat of glassy carbon, W_{G. FIG. C}Is
Lassi carbon weight, Cp_{S. G}Is silicon
Specific heat of lease, W_{S. G} Is the weight of silicon grease
The quantity, W, is the weight of the sample. The ratio of the carbon content is relatively
Ratio of high carbon content / relatively low carbon content
The ratio was 16/1 in Example 1, 5.3 / 1 in Example 2, and
It was 80/1 in Example 3 and 80/1 in Example 4. [126] [Table 1]In Examples 1 and 3, the leakage current at 400 ° C.
In Example 2, the ceramic at a high temperature of 400 ° C.
The thermal conductivity of the dielectric film is also maintained at 100 W / mK.
Excellent in temperature rise characteristics. In Examples 1 and 3,
Insulation at high temperature while maintaining volume resistivity of Mick dielectric film
The thermal conductivity at high temperature is ensured by the lower ceramic layer,
Since it is secured between the RF electrodes and between the resistance heating elements, 200
In the high temperature range of over ℃
Can be. Note that the dielectric film of Example 1 and the dielectric film of Example 2
The ceramic layers use the same binder,
Bon amount was different. The reason for this is that the lower ceramic layer
Presumably because carbon is likely to remain
ing. In the fourth embodiment, in the low temperature region (less than 200 ° C.)
Has excellent thermal conductivity in the resistance heating element formation area,
In the temperature region (above 200 ° C), heat conduction in other parts
Stable temperature rise from low to high temperature to ensure heat resistance
Excellent in surface temperature uniformity. In Comparative Example 1
Indicates that the leakage current is relatively large.
Although the flow is small, there are problems with concealment and thermal conductivity at high temperatures
is there. Further, in Comparative Example 3, the thermal conductivity at low temperature was poor,
A temperature distribution appears on the heating surface at the beginning of the temperature rise. [0129] As described above, the ceramic of the present invention is
In ceramic substrates, the ceramic substrate makes carbon uneven.
Containing, in each part inside the ceramic substrate
The carbon concentration depends on the characteristics required for each part.
Properties, ie, concealability, thermal conductivity, volume resistivity, etc.
Hot play because the density is set to
, Wafer prober, electrostatic chuck, etc.
Functions can be fully exhibited.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view schematically showing an electrostatic chuck which is an embodiment of a ceramic substrate for a semiconductor device of the present invention. FIG. 2 is a sectional view taken along line AA of the electrostatic chuck shown in FIG. FIG. 3 is a sectional view taken along line BB of the electrostatic chuck shown in FIG. 1; FIG. 4 is a cross-sectional view schematically illustrating an example of an electrostatic electrode of the electrostatic chuck. FIG. 5 is a cross-sectional view schematically illustrating an example of an electrostatic electrode of the electrostatic chuck. FIG. 6 is a cross-sectional view schematically showing a wafer prober which is an embodiment of the ceramic substrate for a semiconductor device of the present invention. FIGS. 7A to 7D are cross-sectional views schematically showing a part of the manufacturing process of the electrostatic chuck. FIGS. 8A and 8B are partially enlarged schematic views showing an example of a resistance heating element. FIGS. 9A to 9E are cross-sectional views illustrating a part of the manufacturing process of the hot plate. DESCRIPTION OF SYMBOLS 101 electrostatic chuck 1, 43 ceramic substrate 2, 22, 32a, 32b chuck positive electrostatic layer 3, 23, 33a, 33b chuck negative electrostatic layer 2a, 3a semicircular portion 2b, 3b comb tooth Part 4 ceramic dielectric film 5 resistance heating element 6, 18 external terminal pin 9 silicon wafer 11 bottomed hole 12 through hole 16 through hole 42 chuck top conductor layer 45 guard electrode 46 ground electrode 47 groove 48 suction hole

──────────────────────────────────────────────────続 き Continuation of front page (51) Int.Cl. ⁷ Identification symbol FI H05B 3/20 328 H05B 3/20 328 (56) References JP-A-5-229871 (JP, A) JP-A-9-48668 (JP, a) JP Akira 60-186479 (JP, a) JP flat 1-179765 (JP, a) JitsuHiraku flat 6-26193 (JP, U) (58 ) investigated the field (Int.Cl. ⁷ H01L 21/68 H01L 21/66 H05B 3/10 H05B 3/16 H05B 3/20 328

Claims (1)

(57) [Claims 1] A semiconductor wafer is placed in contact with the semiconductor wafer,
Or a ceramic substrate for a semiconductor manufacturing / inspection apparatus for holding and heating at a constant interval, wherein the ceramic substrate contains carbon, and has an electrode as a conductor inside the ceramic substrate, A ceramic substrate for a semiconductor manufacturing / inspection apparatus , wherein a carbon concentration between the electrodes and / or in a ceramic layer on the electrodes is lower than a carbon concentration in a ceramic layer below the electrodes.