JP2003115427A - Ceramic substrate for semiconductor production and inspection equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic substrate for semiconductor production and an inspection equipment which can satisfy various characteristics required for respective parts of the inside of the ceramic substrate such as sintering property, concealing property, thermal conductivity, volume resistivity, or the like, and which can fully demonstrate a demanded function as a wafer probe, an electrostatic chuck, etc. SOLUTION: The ceramic substrate for the semiconductor production and the inspection equipment is a substrate for disposing a semiconductor wafer in contact with the substrate, or heating in the state of being held by keeping a fixed space in the interval. The ceramic substrate is constituted so as to contain carbon, so as to have electrodes as an electric conductor inside of the substrate, and simultaneously so as to form resistance heating elements in the inside or on the bottom face of the substrate beneath the electrodes. The ceramic substrate is characterized in that carbon concentration in a ceramic layer between the electrodes and/or on the electrodes is higher than the carbon concentration in a ceramic layer beneath the electrodes.

Description

Description: BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention
Sheet (ceramic heater), electrostatic chuck, wafer pro
Used as semiconductor manufacturing and inspection equipment.
Ceramic substrate. [0002] Etching equipment, chemical vapor deposition equipment
In semiconductor manufacturing, inspection equipment, etc.
Using a metal substrate such as stainless steel or aluminum alloy
Heaters and wafer probers have been used. Only
However, metal heaters have poor temperature control characteristics.
Is thicker and thicker and bulkier.
Has the problem of poor corrosion resistance to corrosive gases.
Was. On the other hand, Japanese Patent Application Laid-Open No. 11-40330 discloses
According to reports etc., instead of metal, aluminum nitride
Any ceramic heater is disclosed. When
Rollers are the base material of this heater, aluminum nitride
The material itself is generally white or gray-white,
It is not preferable as a susceptor. Rather, the black one
Is suitable for this type of application due to its high radiant heat.
And the high concealability of the electrode pattern
It was particularly suitable for a cover and an electrostatic chuck. In addition,
Thermometer (surface thermometer)
In the case of white or gray-white, the reflected heat is also measured.
Therefore, accurate temperature measurement was impossible. [0004] Conventionally developed in response to such demands
According to the invention, in an aluminum nitride substrate for a semiconductor manufacturing apparatus,
Containing crystalline carbon is proposed
(JP 9-48668 A). This aluminum nitride
The substrate contains carbon at a uniform concentration. [0005] However, this half
Each part of the aluminum nitride substrate for conductor manufacturing equipment
Therefore, sinterability, concealment, thermal conductivity, volume resistance, etc.
The required characteristics are different, and carbon is
Even if it is contained uniformly, the above-mentioned required properties will be sufficiently satisfied.
Semiconductor manufacturing equipment such as electrostatic chucks
The function of the wafer prober as a semiconductor inspection device declined
In some cases. Means for Solving the Problems [0006] The present inventors have set forth the above object.
As a result of intensive research to solve, for example, electrostatic electrodes
And below the RF electrode and above the electrostatic and RF electrodes
By changing the carbon concentration between
For semiconductor manufacturing and inspection equipment that can satisfy the required characteristics described
Finding that ceramic substrates can be manufactured
Thus, the present invention has been completed. That is, the semiconductor manufacturing / inspection apparatus of the present invention
The ceramic substrate is placed in contact with the semiconductor wafer.
Or heating at regular intervals
Ceramic substrate for semiconductor manufacturing and inspection equipment
The ceramic substrate contains carbon, and the ceramic
In addition to having electrodes as conductors inside the
Resistance inside or on the bottom of the ceramic substrate below the electrode
A heating element is formed between the electrodes and / or above
The carbon concentration in the ceramic layer on the electrode is
Note that it is higher than the carbon concentration in the lower ceramic layer.
Sign. In other words, the semiconductor manufacturing / inspection equipment cell of the present invention.
In the case of a ceramic substrate, the `` Carbon in the ceramic layer between the electrodes
Is lower than the carbon concentration in the ceramic layer below the electrode.
Carbon concentration in the ceramic layer above the electrode
Is less than the carbon concentration in the ceramic layer below the electrode
High '' and `` high '' in the ceramic layer between the electrodes and above the electrodes
Carbon concentration in the ceramic layer below the electrode
Higher than the degree)
No. According to the present invention, the amount of carbon above the electrode is increased.
This reduces the brightness of the heated surface of the wafer,
Concealability is improved. In addition, the black color increases the amount of radiant heat.
I can do it. In addition, the part forming the resistance heating element
The amount of carbon is small and the drop in volume resistivity at high temperatures is suppressed.
(Example 2). Thus, in the present invention, the volume at high temperature
The reduction in resistivity is suppressed, and the concealment of the electrodes is improved.
Can be DETAILED DESCRIPTION OF THE INVENTION A semiconductor manufacturing / inspection apparatus of the present invention
The ceramic substrate is placed in contact with the semiconductor wafer
Or for holding and heating at regular intervals
A ceramic substrate for a semiconductor manufacturing / inspection device,
The ceramic substrate contains carbon;
Having electrodes as conductors inside the substrate,
Resistor generated inside or on the bottom of the ceramic substrate below the electrode
A heating element is formed between the electrodes and / or
The carbon concentration in the ceramic layer on the electrode
Characterized by higher carbon concentration in the ceramic layer
And A ceramic for a semiconductor manufacturing / inspection apparatus according to the present invention.
Mic substrate (hereinafter referred to as ceramic substrate for semiconductor device)
U), the ceramic substrate contains carbon,
First, the above carbon concentration is
In each part, the characteristics required in each part
Properties, ie sinterability, concealment, thermal conductivity, volume resistivity, etc.
Is set to a concentration that satisfies
Plate (ceramic heater), wafer prober or electrostatic
Fully demonstrate the functions required for chucks, etc.
Can be. That is, for example, the semiconductor device according to the present invention
In a ceramic substrate, which is one type of ceramic substrate for manufacturing equipment
An electrode for inducing a chucking force on the
The electrostatic chuck formed with the
The ceramic layer between the electrodes and / or above the electrostatic electrodes (hereinafter
Below, called ceramic dielectric film)
The ceramic layer below the electrostatic electrode (hereinafter referred to as the lower ceramic
Lower than the carbon concentration in the
And the volume of the ceramic dielectric film at high temperature
It is possible to keep the withstand voltage high by suppressing the decrease in resistance.
The ceramic dielectric during use as an electrostatic chuck.
The dielectric breakdown of the body film can be prevented. Ma
The carbon concentration in the ceramic layer below the electrostatic electrode
Suppresses the decrease in thermal conductivity at high temperatures by increasing the degree
As a result, the temperature of the heater can be quickly raised. [0011] Further, the plasma etching apparatus has an electrostatic chamber.
When incorporating a microphone, a high-frequency electrode (hereinafter referred to as
(Referred to below as RF electrodes).
At the time, between RF electrodes embedded in the ceramic substrate or
Ceramic layer above RF electrode (ceramic dielectric film and
The carbon concentration in part of the lower ceramic layer)
Ceramic layer below F electrode (of lower ceramic layer
(Excluding the area where the RF electrode and resistance heating element are formed)
By setting the carbon concentration lower than that of
Suppresses drop in volume resistance of lamic dielectric film at high temperature
Thus, the withstand voltage can be kept high. Further, in the electrostatic chuck, the ceramic
The carbon concentration in the dielectric
By setting the carbon concentration higher than that of
Prevents thermal conductivity of lamic dielectric film from decreasing at high temperature
Can be mounted on the electrostatic chuck.
Heating and cooling of the eha can be performed quickly. Also,
By adding carbon, the ceramic dielectric
Because the film can be blackened, the above ceramic dielectric
The electrostatic electrode existing under the film can be hidden. The amount of carbon is compared between the electrodes and
And / or the average of any five points of the ceramic layer above the electrode
The amount of carbon and the far side from the part where the electrode is formed
With the main surface as the reference surface, 50% in the thickness direction from the reference surface
And the average carbon content at any five points in the area at
Compare. The electrodes are not limited to electrostatic electrodes and RF electrodes, but
The same applies to the guard electrode and ground electrode in the eha prober.
It is like. In the ceramic substrate for a semiconductor device of the present invention,
Is the area with relatively high carbon content / relative carbon
The ratio of the area with a small amount is more than 1/1 and 1000/1 or less.
The lower part is desirable, and in particular, 1.2 / 1 to 500/1 is desirable.
No. Adjusting for differences greater than 1000/1 is realistic
Because it is difficult. Further, a resistance heating element is provided in the ceramic substrate.
When the ceramic layer between the resistance heating element (hereinafter, heating element)
Layer) and the other parts of carbon
By setting lower than the concentration, the thermal conductivity at low temperature
Temperature can be secured at low temperatures
To prevent variations in surface temperature at the beginning of heating
Made it possible. FIGS. 8A and 8B show an example of a resistance heating element.
FIG. Between the resistance heating elements
Is a spiral resistance heating wire 8 as shown in FIG.
In the case of 5, the inside of the spiral (A), that is, the resistance heating element
85 inside the tubular space formed by connecting the outer edges
On the other hand, a plurality of spiral heating wires 85 are formed.
The top and bottom of the tubular body
Inside the space (B) formed by connecting
U. Further, a flat resistance heat generation as shown in FIG.
In the case of the body 86, the uppermost parts of the two resistance heating elements 86
And the space formed by connecting the bottoms
(B '). The resistance heating element is spread over the upper and lower layers.
If it is formed in the uppermost layer, it is formed between the uppermost layer and the lowermost layer.
This space is also called the resistance heating element. This definition is
The same applies to the case of. Also, the amount of carbon
The average carbon content and resistance at any five points between the resistance heating elements
From the heating element formation area to the front and back main surface of the ceramic substrate
Measure the average carbon content at any five points in all regions and compare
Compare. The ceramic substrate for a semiconductor device of the present invention has a resistance.
If an anti-heating element is formed, the relative amount of carbon
The ratio of the region with a large amount / the region with a relatively small amount of carbon is:
More than 1/1 and not more than 1000/1 is desirable, especially 1.2
/ 1 to 500/1 is desirable. Greater than 1000/1
This is because it is practically difficult to adjust the difference. The above ceramic substrate contains carbon.
The thermal conductivity at high temperatures (above about 200 ° C)
If you don't want it to go down, add crystalline carbon
It is desirable to reduce the volume resistivity at high temperatures
If not, it is desirable to add amorphous carbon.
Good. Therefore, in some cases, both are added
This ensures that both volume resistivity and thermal conductivity are properly adjusted.
Can be adjusted. The crystallinity of carbon is
1550cm when measuring the vector ^-1 Nearby and 1333c
m ^-1 You can judge by the size of the nearby peak
You. 1333cm ^-1 The size of the nearby peak is large.
And low crystallinity. A place where carbon is contained in a ceramic substrate.
In this case, the content is preferably 5 to 5000 ppm. Mosquito
When the content of carbon is less than 5 ppm, radiant heat is low.
And it becomes difficult to hide the electrodes,
On the other hand, if the carbon content exceeds 5000 ppm,
It is difficult to suppress densification and a decrease in volume resistivity. Adding carbon to the ceramic dielectric film
To do this, mix the raw material powder, resin, etc. with a solvent and mold
Easy to carbonize even when heated when manufacturing body
Resin, carbohydrate, etc.
May be performed in a non-oxidizing atmosphere. Ma
Carbonized by baking sucrose or acrylic binder
By heating carbohydrates and resins that are easy to
And may be added. In addition, crystalline
Carbon black and graphite were pulverized into powder
A thing may be used. The acrylic resin binder is separated according to the acid value.
Since the ease of disassembly is different, the acid value changes for each green sheet.
By changing the amount, the amount of carbon can be adjusted. For example,
Acrylic resin with acid value of 0.3 to 1.0 KOHmg / g
Binder is easily decomposed, and acid of 5-17KOHmg / g
Acrylic resin binder with high valency is not easily decomposed. Also,
The amount of carbon is adjusted by adjusting the carbon and
By changing the amount of gender for each green sheet
Alternatively, the conductor is made of a high melting point metal such as Mo or W.
And under normal pressure, 1500-2000 ° C, in an inert atmosphere
By heating, Mo and W react with carbon
It may be performed by adjusting the amount of carbon. The ceramic substrate for a semiconductor device of the present invention
The ceramic material to be formed is not particularly limited,
For example, nitride ceramic, carbide ceramic, oxide
Ceramics and the like can be mentioned. As the nitride ceramic, metal nitride
Ceramics, such as aluminum nitride, silicon nitride
Element, boron nitride, titanium nitride and the like. Also on
As the carbide ceramic, metal carbide ceramic,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples include tantalum carbide and tungsten carbide. As the above-mentioned oxide ceramic, metal oxide
Ceramics such as alumina, zirconia, koji
And mullite. These ceramics
May be used alone or in combination of two or more. Among these ceramics, nitride ceramics
Mick and carbide ceramics compared to oxide ceramics
All desirable. This is because the thermal conductivity is high. Also, nitriding
Aluminum nitride is the most suitable
You. Because the thermal conductivity is the highest at 180 W / m · K
You. In the present invention, the matrix
It is desirable that a sintered body contains a sintering aid. So
Alkaline metal oxides, alkaline earths
Metal oxides and rare earth oxides can be used.
Among these sintering aids, in particular, CaO, Y _Two O _Three , N
a _Two O, Li _Two O, Rb _Two O _Three Is preferred. These include
The amount is desirably 0.1 to 10% by weight. Also,
Alumina may be used. Further, a ceramic for a semiconductor device according to the present invention is provided.
In the substrate where the carbon concentration is high,
The brightness is N based on the value of JIS Z 8721.
It is desirable to contain carbon so as to be 4 or less.
No. The one with this level of lightness is effective for radiant heat and concealment
Because it is excellent. Here, the lightness N is an ideal black lightness.
0, the ideal white lightness is 10, and these black light
Between the brightness and the brightness of white, the perception of the brightness of the color is equal
Each color is divided into 10 so that
It is displayed. And the actual measurement is N0 to N
The comparison is made with the color chart corresponding to No. 10. Decimal point in this case
The first place is 0 or 5. The ceramic substrate for a semiconductor device of the present invention
Does not contain any pores or, if there are,
It is desirable that the pore diameter of the largest pore is less than 50 μm.
No. If there are no pores, the withstand voltage at high temperatures is particularly high.
When pores are present, the fracture toughness value increases.
Become. Or to either of the design for this purpose, the required characteristics considered
It should be decided in consideration. Fracture toughness due to presence of pores
Is not clear why, but crack extension
It is presumed that it is stopped by a hole. In the above-mentioned ceramic substrate for a semiconductor device,
It is desirable that the maximum pore size be 50 μm or less.
No. If the pore size exceeds 50 μm, the temperature will be high, especially 200 ° C or less.
Because the above withstand voltage characteristics cannot be secured.
is there. The maximum pore diameter is desirably 10 μm or less. 200
This is because the amount of warpage at a temperature of not less than ° C is small. Further, the ceramic substrate for a semiconductor device is
The porosity is desirably 5% or less. Porosity of 5
%, The number of pores increases and the pore diameter increases.
The pores can easily communicate with each other,
This is because the pressure drops. The porosity and the maximum pore diameter are determined by the sintering process.
Adjust by pressure time, pressure, temperature, additives such as SiC and BN
I do. Pores are introduced to prevent sintering of SiC and BN
Can be done. The measurement of the pore diameter of the maximum pore is for five samples.
The surface is mirror polished, 2000 to 5000 times
By photographing the surface with an electron microscope at 10 magnifications
Do. Then select the largest pore size in the photograph taken.
The average of 50 shots is defined as the maximum pore diameter. The porosity is measured by the Archimedes method.
You. Pulverized sintered body and pulverized in organic solvent or mercury
Put the material in, measure the volume, and calculate the true ratio from the weight and volume of the pulverized material.
Calculate porosity from true specific gravity and apparent specific gravity
It is. The thickness of the ceramic substrate for a semiconductor device
Is preferably 50 mm or less, particularly preferably 25 mm or less. In particular
Thickness of ceramic substrate for semiconductor device exceeds 25mm
And the heat capacity of the ceramic substrate increases,
Heating and cooling by providing control means will increase the heat capacity
As a result, the temperature followability is reduced. In addition, the existence of pores
The problem of warpage caused by the presence is that the thickness exceeds 25 mm
This is because it is unlikely to occur with a thick ceramic substrate.
Particularly, 5 mm or less is optimal. Note that the thickness is 1 mm or less.
Above is desirable. The ceramic substrate is 0.1 to 5% by weight.
Of oxygen. 0.1% by weight
When full, the withstand voltage cannot be secured, and conversely, 5% by weight
If the temperature exceeds the limit, the oxide will withstand
This is because the pressure still drops. Also, the amount of oxygen
If it exceeds 5% by weight, the thermal conductivity decreases and the temperature rise and fall characteristics decrease.
It is because it decreases. The ceramic substrate for a semiconductor device of the present invention
In the board, a silicon wafer is placed on a ceramic substrate
In addition to placing it in contact with the surface,
Supported with support pins and fixed between the ceramic substrate
In some cases. Therefore, the ceramic
Insert the support pins into the through holes in the
By holding and raising and lowering the support pins,
Receiving a recon wafer or silicon wafer
Placed on a backing substrate or supporting a silicon wafer.
It can also be heated. Also, on the bottom of the ceramic substrate
Has a heating element, and the surface of the heating element is coated with metal.
A layer may be provided. Also, a bottomed hole is provided
If so, insert a thermocouple here. Silicon wafer
C is heated on the wafer heating surface side. The diameter of the ceramic substrate is 200 mm or less.
Above is desirable. Especially 12 inches (300mm) or more
Is desirable. Becoming the mainstream of next-generation semiconductor wafers
Because. Also, the problem of warpage caused by the presence of pores
Occurs on a ceramic substrate with a diameter of 200 mm or less.
Because it is difficult. Ceramic substrate for semiconductor device of the present invention
The board is used as a device for manufacturing and inspecting semiconductors.
Ceramic substrate used as a specific device
Are, for example, electrostatic chucks, wafer probers,
Rate (ceramic heater), susceptor, etc.
You. FIG. 1 shows a ceramic for a semiconductor device according to the present invention.
An embodiment of the electrostatic chuck, which is an embodiment of the substrate, is modeled.
FIG. 2 is a longitudinal sectional view schematically shown, and FIG.
FIG. 3 is a sectional view taken along line AA of the electric chuck, and FIG.
FIG. 2 is a sectional view taken along line BB of the electrostatic chuck shown in FIG.
You. The electrostatic chuck 101 has a circular shape in plan view.
A chuck positive electrode electrostatic layer 2
And an electrostatic electrode layer comprising a chuck negative electrode electrostatic layer 3 are embedded.
Have been. Ceramic dielectric film above this electrostatic electrode layer
The ceramic layer called No. 4 is as thin as 50 to 1500 μm.
No. The silicon wafer 9 is placed on the electrostatic chuck 101
Placed and grounded. As shown in FIG. 2, the chuck positive electrode electrostatic layer
2 comprises a semicircular arc-shaped portion 2a and a comb-tooth portion 2b.
The negative electrode electrostatic layer 3 also has a semicircular portion 3a and a comb-tooth portion 3b.
These chuck positive electrode electrostatic layer 2 and chuck
The negative electrode electrostatic layer 3 intersects the comb teeth 2b, 3b.
These chuck positive electrode electrostatic layers 2 and
The DC power supply +
Side and-side are connected, and the DC voltage V _Two Is applied
It has become. On the other hand, the ceramic substrate 1
In order to control the temperature of the con-wafer 9, FIG.
A resistance heating element 5 having a concentric circular shape in plan view as shown is provided.
External terminal pins 6 are provided at both ends of the resistance heating element 5.
Connected, fixed, voltage V ₁ Is applied
You. Also, although not shown in FIGS.
As shown in FIG. 3, a temperature measuring element is inserted into the work board 1.
To support the bottomed hole 11 and the silicon wafer 9
Through hole 1 for inserting a support pin (not shown) to be inserted
2 are formed. Note that the resistance heating element 5 is
May be formed on the bottom surface of the work substrate. When the electrostatic chuck 101 is operated,
Is applied to the chuck positive electrostatic layer 2 and the chuck negative electrostatic layer 3.
DC voltage V _Two Is applied. This allows the silicon wafer
Reference numeral 9 denotes a chuck positive electrostatic layer 2 and a chuck negative electrostatic layer 3.
These electrodes have a ceramic dielectric due to the electrostatic action of
It is adsorbed and fixed via the membrane 4. This
Thus, the silicon wafer 9 is fixed on the electrostatic chuck 101.
After that, the silicon wafer 9 is subjected to various processes such as CVD.
Is performed. The above-mentioned electrostatic chuck has a structure in which an electrostatic electrode layer and a resistance generating element are connected.
And a heating element, for example, as shown in FIGS.
It has a configuration. In the following, the electrostatic chip
Each of the components that make up the jack is
What is not described in the description of the board
I will go. The ceramic dielectric constituting the electrostatic chuck is described below.
Is the conductor film the same material as the ceramic substrate for electrostatic chuck?
However, in order to achieve the intended function,
As shown, the carbon concentration is different from the rest.
You. That is, at a high temperature of the ceramic dielectric film
Suppress the drop in volume resistivity, keep its withstand voltage high,
Even if the thickness of the ceramic dielectric film is thinner than normal,
Prevents dielectric breakdown during use as an electric chuck
If necessary, the carbon concentration in the ceramic dielectric film
To the carbon concentration in the ceramic layer below the electrostatic electrode.
It is desirable to set it lower than the degree. In addition, the ceramic dielectric film at a high temperature
To prevent a decrease in thermal conductivity and hide the electrostatic electrode
Indicates the carbon concentration in the ceramic dielectric film,
Than the carbon concentration in the ceramic layer below the electrostatic electrode
It is desirable to set it high. In other words, depending on the required characteristics
Thus, the carbon amount is appropriately adjusted. The thickness of the ceramic dielectric film is 50 to 50.
It is desirable to be 5000 μm. Above ceramic invitation
If the thickness of the conductor film is less than 50 μm, the film thickness is too thin
Voltage cannot be obtained and a silicon wafer is placed
The dielectric breakdown of the ceramic dielectric film
On the other hand, the thickness of the ceramic dielectric film is 50
If it exceeds 00 μm, the distance between the silicon wafer and the electrostatic electrode
The ability to adsorb silicon wafers is low due to separation
This is because it becomes worse. Ceramic dielectric film thickness
Is more preferably 100 to 1500 μm. An electrostatic electrode formed in a ceramic substrate;
For example, sintering of metal or conductive ceramic
Body, metal foil, and the like. As a metal sintered body,
Gusten, at least one selected from molybdenum
Are preferred. Metal foil is the same material as metal sintered body
Desirably, it consists of These metals are relatively oxidized
This is because it is difficult to have sufficient conductivity as an electrode.
Tungsten and metal
Use at least one selected from carbides of butene
be able to. FIGS. 4 and 5 show another electrostatic chuck.
FIG. 4 is a horizontal cross-sectional view schematically showing the electrostatic electrode in FIG.
In the electrostatic chuck 20 shown in FIG.
The chuck positive electrode electrostatic layer 22 and the chuck negative electrode
An electric layer 23 is formed, and the electrostatic chuck shown in FIG.
Is a chip having a shape obtained by dividing a circle into four parts inside a ceramic substrate 1.
Jack positive electrode electrostatic layers 32a and 32b and chuck negative electrode electrostatic layer
33a and 33b are formed. In addition, two positive electrode static
Electric layers 22a, 22b and two chuck negative electrode electrostatic layers 3
3a and 33b are formed to cross each other.
You. In addition, an electrode in the form of a divided electrode such as a circle is formed.
The number of divisions is not particularly limited,
The shape may be provided, and the shape is not limited to the fan shape. The resistance heating element is, as shown in FIG.
May be provided inside the substrate,
It may be provided on a surface. When installing a resistance heating element,
Air, etc., as a cooling means in the support container into which the jack is fitted
May be provided. As the resistance heating element, for example, metal or
Sintered conductive ceramics, metal foils, metal wires, etc.
It is. Tungsten, molybdenum
At least one selected from These metals
Is relatively resistant to oxidation and has sufficient resistance to generate heat
This is because that. The conductive ceramic may be a tongue.
At least one selected from carbides of stainless steel and molybdenum
Seeds can be used. In addition, ceramic substrates
When forming a resistance heating element on the bottom, use a metal sintered body.
Noble metals (gold, silver, palladium, platinum), nickel
It is desirable to use Specifically, silver, silver-palladium
For example. Used for the above metal sintered body
The metal particles used are spherical, scaly, or spherical.
A flaky mixture can be used. The metal oxide is added to the metal sintered body.
Is also good. The above metal oxides are used for ceramic bases.
This is for bringing the plate and the metal particles into close contact. The above metal oxide
Improves the adhesion between the ceramic substrate and the metal particles
The reason is not clear, but the surface of the metal particles is slightly
An oxide film is formed, and the ceramic substrate
Of course, even if it is a non-oxide ceramic,
An oxide film is formed on the surface. Therefore, this oxide film
Is sintered on the surface of the ceramic substrate via the metal oxide.
The metal particles adhere to the ceramic substrate
It is thought that there is not. As the metal oxide, for example, oxidized
Lead, zinc oxide, silica, boron oxide (B _Two O _Three ), Al
At least one selected from Mina, Yttria and Titania
Species are preferred. These oxides have the resistance value of the resistance heating element.
Between the metal particles and the ceramic substrate without increasing the
This is because adhesion can be improved. The metal oxide is 100 parts by weight of metal particles.
0.1 parts by weight or more and less than 10 parts by weight
desirable. By using a metal oxide in this range,
Resistance value does not become too large, metal particles and ceramic substrate
This is because the adhesiveness with the adhesive can be improved. In addition, lead oxide, zinc oxide, silica,
Udine (B _Two O _Three ), Alumina, yttria, titania
The ratio is based on 100 parts by weight of the total amount of the metal oxide.
1 to 10 parts by weight of lead oxide and 1 to 30 parts by weight of silica
Parts, 5 to 50 parts by weight of boron oxide, 20 to 7 parts of zinc oxide
0 parts by weight, 1-10 parts by weight of alumina, 1 part of yttria
-50 parts by weight and titania of 1-50 parts by weight are preferred.
However, the total amount of these should not exceed 100 parts by weight.
It is desirable to be adjusted. These ranges are particularly
This is because the adhesiveness to the substrate can be improved. [0057] A resistance heating element is provided on the bottom surface of the ceramic substrate.
In this case, the surface of the resistance heating element 15 is covered with a metal layer 150.
Desirably, it is overturned. The resistance heating element 15 is made of metal
It is a sintered body of particles.
The resistance value changes due to oxidation of. So, the surface
By coating with the metal layer 150, oxidation can be prevented.
You can do it. The thickness of the metal layer 150 is 0.1 to 10 μm
Is desirable. Do not change the resistance of the resistance heating element.
Is within the range that can prevent oxidation of the resistance heating element
It is. The metal used for coating is a non-oxidizing metal
I just need. Specifically, gold, silver, palladium, platinum,
At least one selected from nickel is preferred.
Of these, nickel is more preferred. The resistance heating element
A terminal is required to connect to the
Attached to the resistance heating element through the field, but nickel is solder
This is because the thermal diffusion of the metal is prevented. The connection terminal
Can be used. The resistance heating element is formed inside the heater plate.
The resistance heating element surface is not oxidized.
Therefore, no coating is required. A resistance heating element is formed inside the heater plate.
If a part of the surface of the resistance heating element is exposed,
Good. As a metal foil used as a resistance heating element
Is put on nickel foil and stainless steel foil by etching
It is desirable that the resistance heating element is formed by forming a resistor. pattern
Metal foil may be bonded with a resin film, etc.
No. As the metal wire, for example, tungsten wire, molybdenum
Den wire and the like. Table of ceramic substrate for semiconductor device of the present invention
A conductor is disposed on the surface and inside, and the conductor
But at least the guard electrode or the ground electrode
In other cases, the ceramic substrate
The plate functions as a wafer prober. FIG. 6 shows a ceramic for a semiconductor device according to the present invention.
FIG. 1 schematically shows a wafer prober which is an embodiment of a substrate.
FIG. In this wafer prober 201,
A concentric groove 47 is formed on the surface of the ceramic substrate 43 having the shape.
Is formed and a silicon wafer is partially formed in the groove 47.
Are provided with a plurality of suction holes 48 for sucking
Most of the ceramic substrate 43 including the groove 47
Chuck-top conductor layer 42 for connection to the electrode of EHA
Are formed in a circular shape. On the other hand, a ceramic substrate 43 has
In order to control the temperature of the recon wafer,
A heating element 49 having a concentric circular shape in plan view as shown is provided.
Both ends of the heating element 49 are connected to external terminal pins (not shown).
Is connected and fixed. Also, the ceramic substrate 4
Inside 3, remove stray capacitors and noise
Guard electrode 45 and ground electrode in a grid shape in plan view
46 are provided. Guard electrode 45 and ground electrode
The material of the pole 46 may be the same as that of the electrostatic electrode. The thickness of the chuck top conductor layer 42 is
1 to 20 μm is desirable. If it is less than 1 μm, the resistance value is high
Does not work as an electrode because it is too large, on the other hand, exceeds 20 μm
Is easy to peel due to the stress of the conductor and the conductor
It is. As the chuck top conductor layer 42, for example,
For example, copper, titanium, chromium, nickel, precious metals (gold, silver,
Refractory metals such as platinum, tungsten, and molybdenum
It is possible to use at least one metal selected from
Wear. In the wafer prober having such a configuration, the
A silicon wafer with an integrated circuit formed on it
Later, a probe card with tester pins
Pressurize and apply voltage while heating and cooling
Tests can be conducted. Next, a ceramic substrate for a semiconductor device according to the present invention will be described.
Regarding the method of manufacturing a plate, an example is a method of manufacturing an electrostatic chuck.
Then, description will be made based on the cross-sectional views shown in FIGS.
I do. (1) Next, oxide ceramic, nitride ceramic, charcoal
Ceramic powders such as
Fat binder (Mitsui Chemicals SA-545 series acid value 0.
5. Kyoeisha brand name KC-600 series Acid value 17
) And a solvent to obtain a green sheet 50.
You. Depending on the desired properties, the acrylic binder
Adjust the volume. As the ceramic powder mentioned above,
For example, use aluminum nitride, silicon carbide, etc.
And, if necessary, sintering aids such as yttria
May be added. It should be noted that an electrostatic electrode layer printed body 51 described later has a shape.
Several or one sheets to be laminated on the formed green sheet
Green sheet 55 becomes the ceramic dielectric film 4
Because it is a layer, depending on the purpose,
Select the amount of acrylic binder. First, the ceramic
Manufacturing a substrate, forming an electrostatic electrode layer on it,
It is also possible to form a ceramic dielectric film on it
Wear. The binder used is an acrylic binder.
, Ethyl cellulose, butyl cellosolve, polyvinyl alcohol
At least one selected from alcohols is desirable.
Further, as the solvent, α-terpineol, glycol
At least one member selected from the group consisting of Mix these
The paste obtained by combining is sheeted by the doctor blade method.
The green sheet 50 is formed by molding into a shape. The green sheet 50 may have
Fill through holes and thermocouples to insert support pins of con-wafers
A recessed portion can be provided. Through holes and recesses
It can be formed by punching or the like. Green sea
The thickness of the gate 50 is preferably about 0.1 to 5 mm. Next, an electrostatic electrode layer or the like is formed on the green sheet 50.
Print conductor paste to be the resistance heating element. Printing is a group
Considering the shrinkage of the lean sheet 50,
Ratio so that the electrostatic electrode layer print is obtained.
51, a resistance heating element layer printed body 52 is obtained. Printed body is conductive
Print conductive paste containing conductive ceramic, metal particles, etc.
It forms by doing. The conductivity contained in these conductor pastes
As ceramic particles, tungsten or molybdenum
Carbides are most suitable. Hardly oxidized, low thermal conductivity
Because it is hard to drop. Also, as metal particles,
For example, tungsten, molybdenum, platinum, nickel, etc.
Can be used. Average particle size of conductive ceramic particles and metal particles
The diameter is preferably 0.1 to 5 μm. These particles are large
It is difficult to print conductor paste even if it is too small or too small
Because. [0075] Such pastes include metal particles.
85 to 97 parts by weight of conductive ceramic particles, acrylic
System, ethyl cellulose, butyl cellosolve and polyvinyl chloride
At least one binder selected from nyl alcohol
1.5 to 10 parts by weight, α-terpineol, glyco
Water, ethyl alcohol and butanol.
Prepared by mixing 1.5 to 10 parts by weight of at least one solvent
The best paste for conductors. Furthermore, punching
Fill the hole formed with
To obtain prints 53 and 54. Next, as shown in FIG.
A green sheet 50 having 1, 52, 53, 54;
The green sheet 50 having no printed body is laminated. Stillness
On the green sheet on which the electrode layer printed body 51 is formed
Stacks several or one green sheet 55.
Green sheet 5 having no printed body on the side where the resistance heating element is formed
The reason for stacking 0 is that the end face of the through hole is exposed and
Prevents oxidation during baking to form an anti-heating element
That's because. If the end of the through hole is exposed
If firing for forming a resistance heating element is performed, nickel
It is necessary to sputter metals that are difficult to oxidize, such as
More preferably, it is coated with Au-Ni gold brazing.
Is also good. (2) Next, as shown in FIG.
The layer is heated and pressurized, and inert gas (nitrogen, Al
Gon etc.) Atmosphere, 300 ~ 600 ℃, 0.5 ~ 15: 00
During the heating, the binder is degreased and thermally decomposed. This condition
The carbon amount may be adjusted by adjustment. Grease after degreasing
And sinter the conductive sheet and the conductive paste. The heating temperature is 1000 to 2000 ° C.
Is 100-200kg / cm ^Two Are preferred.
Heat and pressurization are performed in an inert gas atmosphere. Inert moth
As the source, argon, nitrogen, etc. can be used
You. In this step, the through holes 16, 17 and the chuck
Electrostatic layer 2, chuck negative electrode layer 3, resistance heating element 5, etc.
It is formed. (3) Next, as shown in FIG.
Bag holes 13 and 14 are provided for connection of external terminals. Blind hole 1
At least a part of the inner wall of each of the three or fourteen is made conductive.
The inner wall that has been made conductive is the chuck positive electrostatic layer 2,
Connected to the negative electrode electrostatic layer 3, the resistance heating element 5, etc.
Is desirable. (4) Finally, as shown in FIG.
External terminals 6 and 18 are provided in blind holes 13 and 14 via gold brazing.
I can. Further, if necessary, a bottomed hole 12 is provided,
A thermocouple can be embedded inside. The solder is silver-lead, lead-tin, bismuth-tin
Such alloys can be used. The thickness of the solder layer
Preferably, the thickness is 0.1 to 50 μm. Solder connection
This is because it is a range enough to secure. In the above description, the electrostatic chuck 101
(See FIG. 1) as an example, but manufacture a wafer prober
In the case, for example, as in the case of the electrostatic chuck,
Manufactures a ceramic substrate in which a resistance heating element is embedded
After that, a groove is formed on the surface of the ceramic substrate, and a
Apply metallization and plating to form a metal layer
Just do it. Hereinafter, the present invention will be described in more detail. (Example 1) Manufacture of electrostatic chuck (see FIG. 7) (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size)
1.1 μm) 100 parts by weight, yttria (average particle size:
0.4 μm) 4 parts by weight, acrylic binder (Mitsui Chemicals)
SA-545 series Acid value 0.5) 11.5 parts by weight,
0.5 parts by weight of dispersant, 1-butanol and ethanol
Paste mixed with 53 parts by weight of alcohol
Using the doctor blade method
A 0.47 mm green sheet 50 was obtained. Separately, acrylic is used as a binder.
Binder (Kyoeisha brand name KC-600 series acid
17) Except that 11.5 parts by weight were used,
Blended in the same ratio, and the doctor blade
Molding by a green method, a 0.47 mm thick green sheet
I got 55. (2) Next, these green sheets 5
After drying 0, 55 at 80 ° C for 5 hours, processing is necessary
1.8m diameter for green sheet by punching
m, 3.0 mm, 5.0 mm semiconductor wafer support pins
A part to be a through hole to be inserted, for connecting to an external terminal
A portion to be a through hole was provided. (3) A tungsten powder having an average particle diameter of 1 μm
-Bite particles 100 parts by weight, acrylic binder 3.0
Parts by weight, 3.5 parts by weight of α-terpineol solvent and
0.3 parts by weight of powder was mixed to prepare a conductor paste A.
Was. 100 weight of tungsten particles having an average particle diameter of 3 μm
Parts, 1.9 parts by weight of acrylic binder, α-terpineo
3.7 parts by weight of dispersant and 0.2 parts by weight of dispersant
Thus, a conductor paste B was prepared. This conductor paste A
Screen printing on green sheet, conductor pace
Layer was formed. The printing pattern is a concentric pattern
Was. In addition, the other green sheet has the static shape shown in FIG.
A conductive paste layer composed of an electrode pattern was formed. Further, a through hole for connecting an external terminal is provided.
The conductive paste B was filled in the through hole for the hole. From resistance
On the green sheet 50 on which the pattern of the heat body is formed,
In addition, green sea without printing tungsten paste
Layer 50 on the upper side (heating surface) and 13 on the lower side
And a conductive paste layer consisting of an electrostatic electrode pattern
Is laminated on the green sheet 50 printed with
Green sea with no tungsten paste printed on it
Are stacked at 130 ° C. and 80 kg / c.
m ^Two To form a laminate (FIG. 7).
(A)). (4) Next, the obtained laminated body is
Medium, degreasing at 600 ° C for 5 hours, 1890 ° C, pressure 150
kg / cm ^Two Hot press for 3 hours
An aluminum halide plate was obtained. This is a 230mm disc
Cut out into a shape, the thickness of the dielectric layer is 300 μm, the thickness inside
6 μm, 10 mm wide resistance heating element 5 and 10 μm thick
Chuck positive electrode electrostatic layer 2 and chuck negative electrode electrostatic layer 3
(FIG. 7B). (5) Next, the plate obtained in (4) is
After polishing with a diamond grindstone, a mask is placed and Si
Bottom hole for thermocouple on the surface by blasting with C etc.
(Diameter: 1.2 mm, depth: 2.0 mm). (6) Further, through holes are formed.
The part which is located is cut out to form blind holes 13 and 14 (FIG. 7).
(C)) In the blind holes 13 and 14, gold made of Ni-Au is used.
Using a wax, heat and reflow at 700 ° C to make Kovar
The external terminals 6 and 18 were connected (FIG. 7D). In addition,
External terminals are connected by a tungsten support at three points
Is desirable. Connection reliability can be ensured
This is because that. (7) Next, a plurality of thermoelectric devices for controlling temperature
The pair is embedded in the bottomed hole, and an electrostatic chuck having a resistance heating element
Completed the production of (Example 2) Production of electrostatic chuck (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size)
1.1 μm) 100 parts by weight, yttria (average particle size:
0.4 μm) 4 parts by weight, acrylic binder (manufactured by Kyoeisha)
Product name KC-600 series Acid value 17) 11.5 weight
Part, dispersant 0.5 part by weight, 1-butanol and ethanol
Mixed with 53 parts by weight of alcohol
Using a strike, molding by the doctor blade method,
A green sheet 50 having a thickness of 0.47 mm was obtained. Separately, acrylic is used as a binder.
Binder (Mitsui Chemicals SA-545 series, acid value 0.
5) Except for using 11.5 parts by weight,
And then use the doctor blade method as described above.
Green sheet with a thickness of 0.47mm
55 was obtained. In this embodiment, the structure of the binder is
It is the reverse of 1. (2) Next, these green sheets 5
After drying 0, 55 at 80 ° C for 5 hours, processing is necessary
1.8m diameter for green sheet by punching
m, 3.0 mm, 5.0 mm semiconductor wafer support pins
Portion to be inserted through hole, for connecting with external terminal
A portion to be a through hole was provided. (3) Tungsten powder having an average particle diameter of 1 μm
-Bite particles 100 parts by weight, acrylic binder 3.0
Parts by weight, 3.5 parts by weight of α-terpineol solvent and
0.3 parts by weight of powder was mixed to prepare a conductor paste A.
Was. 100 weight of tungsten particles having an average particle diameter of 3 μm
Parts, 1.9 parts by weight of acrylic binder, α-terpineo
3.7 parts by weight of dispersant and 0.2 parts by weight of dispersant
Thus, a conductor paste B was prepared. This conductor paste A
Screen printing on green sheet, conductor pace
Layer was formed. The printing pattern is a concentric pattern
Was. In addition, the other green sheet has the static shape shown in FIG.
A conductive paste layer composed of an electrode pattern was formed. Further, a through hole for connecting an external terminal is provided.
The conductive paste B was filled in the through hole for the hole. From resistance
On the green sheet 50 on which the pattern of the heat body is formed,
In addition, green sea without printing tungsten paste
Layer 50 on the upper side (heating surface) and 13 on the lower side
And a conductive paste layer consisting of an electrostatic electrode pattern
Is laminated on the green sheet 50 printed with
Green sea with no tungsten paste printed on it
Are stacked at 130 ° C. and 80 kg / c.
m ^Two To form a laminate (FIG. 7).
(A)). (4) Next, the obtained laminate was placed in nitrogen gas.
Medium, degreasing at 600 ° C for 5 hours, 1890 ° C, pressure 150
kg / cm ^Two Hot press for 3 hours
An aluminum halide plate was obtained. This is a 230mm disc
Cut out into a shape, the thickness of the dielectric layer is 300 μm, the thickness inside
6 μm, 10 mm wide resistance heating element 5 and 10 μm thick
Chuck positive electrode electrostatic layer 2 and chuck negative electrode electrostatic layer 3
(FIG. 7B). (5) Next, the plate obtained in (4) is
After polishing with a diamond grindstone, a mask is placed and Si
Bottom hole for thermocouple on the surface by blasting with C etc.
(Diameter: 1.2 mm, depth: 2.0 mm). (6) Further, through holes are formed.
The part which is located is cut out to form blind holes 13 and 14 (FIG. 7).
(C)) In the blind holes 13 and 14, gold made of Ni-Au is used.
Using a wax, heat and reflow at 700 ° C to make Kovar
The external terminals 6 and 18 were connected (FIG. 7D). In addition,
External terminals are connected by a tungsten support at three points
Is desirable. Connection reliability can be ensured
This is because that. (7) Next, a plurality of thermoelectric devices for controlling temperature
The pair is embedded in the bottomed hole, and an electrostatic chuck having a resistance heating element
Completed the production of (Embodiment 3) In addition to providing five layers of RF electrodes between the electrostatic chuck resistance heating element and the electrostatic electrodes
Manufactured an electrostatic chuck in the same manner as in Example 1. What
The RF electrode is grid-like and has the same paste as the electrostatic electrode
Was formed by printing. (Example 4) Hot plate (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size)
1.1 μm) 100 parts by weight, yttria (average particle size:
0.4 μm) 4 parts by weight, acrylic binder (manufactured by Kyoeisha)
Product name KC-600 series Acid value 17) 11.5 weight
Part, dispersant 0.5 part by weight, 1-butanol and ethanol
Mixed with 53 parts by weight of alcohol
Using a strike, molding by the doctor blade method,
A green sheet having a thickness of 0.47 mm was obtained. (2) Next, these green sheets were
After drying at 0 ° C for 5 hours, green sea
1.8mm, 3.0m in diameter by punching
m, 5.0 mm penetration through semiconductor wafer support pins
Holes, through holes for connecting to external terminals
Is provided. (3) A tungsten powder having an average particle diameter of 1 μm
-Bite particles 100 parts by weight, acrylic binder 3.0
Parts by weight, 3.5 parts by weight of α-terpineol solvent and
0.3 parts by weight of powder was mixed to prepare a conductor paste A.
Was. This conductive paste A is screened on a green sheet
Printing was performed by printing to form a conductor paste layer. Print putter
Is an electrostatic electrode pattern having the shape shown in FIG. Sa
In addition, a through hole for connecting external terminals
The hole was filled with the conductive paste A. Also, the surface green
After forming a groove for the resistance heating element on the sheet,
Install the resistance heating element according to the method described below, and
The rate was manufactured. FIGS. 9A to 9E show the present embodiment.
FIG. 4 is a cross-sectional view schematically showing a manufacturing process of the hot plate.
You. (4) The green sheet 90 having the grooves 98 formed thereon is black.
Put it in a lead mold, and insert a tungsten wire 95 into the groove 98.
Into a spiral shape (0.5 mm cross section diameter)
(FIGS. 9 (a) and 9 (b)).
Minium powder (manufactured by Tokuyama, average particle size 1.1 μm) 1
00 parts by weight, 4 parts by weight of yttria (average particle size 0.4 μm)
Part and acrylic resin binder (Kyoeisha product name K
C-600 series Acid value 17) From 11.5 parts by weight
The mixture is placed in a mold (FIG. 9 (c)),
Medium, 1890 ° C, pressure 150kg / cm ^Two Pressurized
(FIG. 9D). (5) Thereafter, the sample was further added with nitrogen under normal pressure.
Heated at 800 ° C for 15 hours to form a tungsten wire
Reaction between carbon and ceramic between resistance heating elements 95
Reduced the amount of carbon inside. Obtained in this way
Both surfaces of the sintered body were polished to obtain a hot plate 100
(FIG. 9 (e)). (Comparative Example 1) All the green sheets were
Aluminum powder (manufactured by Tokuyama Co., average particle size 1.1μ)
m) 100 parts by weight, yttria (average particle size: 0.4 μm)
m) 4 parts by weight, acrylic binder (trade name K manufactured by Kyoeisha Co., Ltd.)
C-600 series Acid value 17) 11.5 parts by weight, dispersed
0.5 parts by weight of the agent and 1-butanol and ethanol
Paste containing 53 parts by weight of alcohol
It is obtained by forming by the doctor blade method.
Other than that, the electrostatic chuck was manufactured in the same manner as in Example 1.
Was. The thickness of the green sheet is 0.47 mm.
You. (Comparative Example 2) All the green sheets were
Aluminum powder (manufactured by Tokuyama Co., average particle size 1.1μ)
m) 100 parts by weight, yttria (average particle size: 0.4 μm)
m) 4 parts by weight, acrylic binder (SA-5 manufactured by Mitsui Chemicals, Inc.)
45 series Acid value 0.5) 11.5 parts by weight, dispersant
0.5 parts by weight and 1-butanol and ethanol
Using a paste mixed with 53 parts by weight of
After obtaining by performing the molding by the doctor blade method
Outside, an electrostatic chuck was manufactured in the same manner as in Example 1.
The thickness of the green sheet is 0.47 mm. (Comparative Example 3) Step (5) of Example 4 (immediately
That is, the step of heating at 1800 ° C. under normal pressure is not performed.
A hot plate was manufactured in the same manner as in Example 4 except for
did. [0110] Examples 1 to 4 and
And hot plates and resistance heating elements of Comparative Examples 1 to 3, R
An electrostatic chuck having an F electrode is formed by combining a layer above the electrode with the electrode
Divided into lower layers and containing carbon by the following method.
Measure weight, volume resistivity, thermal conductivity, and leakage current
Specified. The results are shown in Table 1. Evaluation method (1) Measurement of carbon content The sintered body was pulverized and heated at 500 to 900 ° C.
This was performed by collecting the generated COx gas. (2) Measurement of Volume Resistivity The ceramic substrate was cut to a diameter of 10 m.
m, cut into a shape with a thickness of 3 mm, three terminals (main electrode, counter electrode
Electrode, guard electrode), apply DC voltage and charge for 1 minute.
The current flowing through the digital electrometer after charging
Read (I), determine the resistance (R) of the sample, and determine the resistance (R)
And the volume resistivity (ρ) from the sample size and the following formula
It was calculated in (1). (Equation 1) In the above formula (1), t is the thickness of the sample.
(Mm). S is calculated by the following formula (2) and
And given by (3). (Equation 2) (Equation 3) It should be noted that the above equations (2) and (3)
And D ₁ Is the diameter of the main electrode, D _Two Is the inner diameter of the guard electrode
(Diameter), and in this embodiment, D ₁ = 1.45
cm, D _Two = 1.60 cm. (3) Measurement of Leakage Current A voltage of 1 kV was applied between the originally insulated electrostatic electrodes,
The leak current at ℃ is withstand voltage tester (TOS manufactured by Kikusui Electronics Corporation)
-5051) or Ultra High Register (Advan
It was measured using R8340 manufactured by Test Corporation. (4) Measurement of thermal conductivity a. Equipment used Rigaku laser flash method thermal constant measurement device LF / TCM-FA8510B b. Test conditions Temperature: 25 ° C, 400 ° C Atmosphere: Vacuum c. Measurement method ・ Temperature detection in specific heat measurement
The measurement was performed using a thermocouple (platinel) adhered to the above.・ At room temperature specific heat measurement, light receiving plate (glassy
Carbon) bonded with silicon grease
The specific heat (Cp) of the sample was calculated by the following formula (4).
I asked. (Equation 4) In the above equation (4), ΔO is the input
The energy, ΔT, is the saturation value of the temperature rise of the sample, Cp
_{G. FIG. C} Is the specific heat of glassy carbon, W _{G. FIG. C} Is
Lassi carbon weight, Cp _{S. G} Is a silicon
Specific heat of lease, W _{S. G} Is the weight of silicon grease
The quantity, W, is the weight of the sample. The ratio of the carbon content is relatively
Ratio of high carbon content / relatively low carbon content
The ratio was 16/1 in Example 1, 5.3 / 1 in Example 2, and
It was 80/1 in Example 3 and 80/1 in Example 4. [Table 1] In Examples 1 and 3, the leak current at 400 ° C.
In Example 2, the ceramic at a high temperature of 400 ° C.
The thermal conductivity of the dielectric film is also maintained at 100 W / mK.
Excellent in temperature rise characteristics. In Examples 1 and 3,
Insulating properties at high temperature while maintaining volume resistivity of Mic dielectric film
The thermal conductivity at high temperature is ensured by the lower ceramic layer,
Since it is secured between the RF electrodes and between the resistance heating elements, 200
In the high temperature region of over ℃
Can be. Note that the dielectric film of Example 1 and the dielectric film of Example 2
The ceramic layers use the same binder,
Bon amount was different. The reason is that the lower ceramic layer
Presumably because carbon is likely to remain
ing. In the fourth embodiment, in the low temperature region (less than 200 ° C.)
Has excellent thermal conductivity in the resistance heating element formation area
In the warm region (above 200 ° C), heat conduction in other parts
Stable temperature rise from low to high temperature to ensure heat resistance
Excellent in surface temperature uniformity can be guaranteed. In Comparative Example 1
Indicates that the leakage current is relatively large.
Although the flow is small, there are problems with concealment and thermal conductivity at high temperatures
is there. Further, in Comparative Example 3, the thermal conductivity at low temperature was poor,
A temperature distribution appears on the heating surface at the beginning of the temperature rise. As described above, the ceramic of the present invention is
In ceramic substrate, the ceramic substrate makes carbon uneven.
Containing, in each part inside the ceramic substrate
The carbon concentration depends on the characteristics required for each part.
Properties, that is, concealability, thermal conductivity, volume resistivity, etc.
Hot play because the density is set to
, Wafer prober, electrostatic chuck, etc.
Functions can be fully exhibited.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view schematically showing an electrostatic chuck which is one embodiment of a ceramic substrate for a semiconductor device of the present invention. FIG. 2 is a sectional view taken along line AA of the electrostatic chuck shown in FIG. FIG. 3 is a sectional view taken along line BB of the electrostatic chuck shown in FIG. 1; FIG. 4 is a cross-sectional view schematically illustrating an example of an electrostatic electrode of the electrostatic chuck. FIG. 5 is a cross-sectional view schematically illustrating an example of an electrostatic electrode of the electrostatic chuck. FIG. 6 is a cross-sectional view schematically showing a wafer prober which is one embodiment of the ceramic substrate for a semiconductor device of the present invention. FIGS. 7A to 7D are cross-sectional views schematically showing a part of the manufacturing process of the electrostatic chuck. FIGS. 8A and 8B are partially enlarged schematic views showing an example of a resistance heating element. FIGS. 9A to 9E are cross-sectional views illustrating a part of the manufacturing process of the hot plate. DESCRIPTION OF SYMBOLS 101 electrostatic chuck 1, 43 ceramic substrate 2, 22, 32a, 32b chuck positive electrostatic layer 3, 23, 33a, 33b chuck negative electrostatic layer 2a, 3a semi-circular portion 2b, 3b comb tooth Part 4 ceramic dielectric film 5 resistance heating element 6, 18 external terminal pin 9 silicon wafer 11 bottomed hole 12 through hole 16 through hole 42 chuck top conductor layer 45 guard electrode 46 ground electrode 47 groove 48 suction hole

   ────────────────────────────────────────────────── ─── Continuation of front page    F term (reference) 2G011 AA17 AC00 AE03                 3K092 PP09 QA05 QC02 QC20 QC49                       RF03 RF11 RF27 VV09 VV12                       VV22                 5F031 CA02 HA02 HA03 HA17 HA18                       HA37 MA28 MA30 MA32 MA33

Claims (1)

Claims: 1. A semiconductor wafer is placed in contact with a semiconductor wafer,
Or a ceramic substrate for a semiconductor manufacturing / inspection apparatus for holding and heating at a constant interval, the ceramic substrate containing carbon, and having an electrode as a conductor inside the ceramic substrate, A resistance heating element is formed inside or on the bottom of the ceramic substrate below the electrodes, and the carbon concentration between the electrodes and / or in the ceramic layer on the electrodes is lower than the carbon concentration in the ceramic layer below the electrodes. Ceramic substrate for semiconductor manufacturing and inspection equipment.