JP3502034B2 - Wafer prober and ceramic substrate used for wafer prober - Google Patents

Description

Detailed Description of the Invention

[0001]

[Detailed Description of the Invention]

[0002]

2. Description of the Related Art Semiconductors are extremely important products required in various industries.
It is manufactured by slicing a silicon single crystal into a predetermined thickness to manufacture a silicon wafer, and then forming various circuits and the like on the silicon wafer. In the manufacturing process of this semiconductor chip, a probing process for measuring and checking whether or not the electrical characteristics of the silicon wafer operate as designed is necessary at the stage of the silicon wafer, and a so-called prober is used for that purpose.

An example of such a prober is a patent.
No. 2587289, Japanese Patent Publication No. 3-4047
In Japanese Patent Laid-Open No. 11-31724, there is
Has a chuck top made of metal such as aluminum alloy or stainless steel
A wafer prober is disclosed. Such a
In the haplober, for example, as shown in FIG.
Place the silicon wafer W on the prober 501 and
Probe card 60 with tester pins on recon wafer W
Press 1 and apply voltage while heating and cooling to conduct electricity.
Do the test. In FIG. 12, V₃ Is a plow
Power supply 33, V applied to the bucard 601 ₂ Resistance heating
Power supply 32, V applied to body 41₁ Led chuck top
A power source 31 applied to the body layer 2 and the guard electrode 5,
The power supply 31 is also connected to the ground electrode 6 and is grounded.
There is.

[0004]

However, a wafer prober having such a metal chuck top has the following problems.
There were the following problems.

First, since it is made of metal, the thickness of the chuck top must be increased to about 15 mm. In order to make the chuck top thicker, a thin metal plate is pressed on the chuck top by the tester pins of the probe card, warping or distorting the metal plate of the chuck top, and placing it on the metal plate. This is because the silicon wafer may be damaged or tilted. Therefore, it is necessary to make the chuck top thick, but as a result, the weight of the chuck top becomes large and bulky.

[0006]

Therefore, the present inventors have
It was recalled that instead of the chuck top made of metal, a conductor layer was provided on the surface of a ceramic substrate having high rigidity and used as the chuck top conductor layer. Since this ceramic substrate has high rigidity, its thickness can be made thin, and as a result, the heat capacity can be made small and the temperature can be raised and lowered quickly to some extent. If the bonded body was used as it was, the temperature rising and cooling characteristics could not be said to be sufficient, and there was room for improvement.

When a silicon wafer is placed on a ceramic substrate made of this sintered body and heated, if the infrared light transmittance of the ceramic substrate is high, the radiant heat cannot be fully utilized. There was a problem of poor thermal efficiency. Further, if the lightness is too high, the shapes of the guard electrode and the ground electrode are visible, which is not preferable in terms of appearance and reduces the commercial value.

Therefore, the present inventors have made further studies,
When manufacturing a ceramic substrate, by adding a predetermined amount of carbon material, high thermal conductivity at high temperature, temperature rise,
It was found that it is possible to obtain a ceramic substrate having excellent temperature lowering characteristics.

Further, it was found that the guard electrode and the ground electrode can be concealed and the radiant heat can be utilized when heating the silicon wafer by adding a predetermined amount of carbon material to make it black. The present invention has been completed.

[0010] That is, a wafer prober according to the present invention, together with the chuck top conductive layer is formed on the surface of the ceramic substrate, Ri Na has a bottom surface or internal to the heating element of the ceramic substrate, performing probing semiconductor wafer Was
A fit of a wafer prober, the ceramic substrate 8
It is characterized by containing 0 to 5100 ppm of carbon. Also, cell <br/> ceramic substrate which serves as a wafer prober according to the present invention, together with the chuck top conductive layer on the surface of the ceramic substrate is formed, it becomes to have a heating element on the bottom or inside of the ceramic substrate, Semiconductor wafer
Functions as a wafer prober for probing
A ceramic substrate, wherein the ceramic substrate is 8
Characterized that you have to contain carbon of 0~5100ppm

[0011] Also, the above-mentioned ceramic substrate JIS Z 8
The brightness based on 721 is preferably N4 or less.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION The wafer prober of the present invention (hereinafter,
(Including ceramic substrates used in wafer probers)
Is chuck top conductive layer on the surface of the ceramic substrate is formed Rutotomoni, the bottom surface of the ceramic substrate or
A wafer prober having a heating element therein, wherein the ceramic substrate contains carbon. Further, the ceramic substrate of the present invention is used for a wafer prober, and specifically functions as a probing stage (so-called chuck top) for a semiconductor wafer.

In the present invention, since the ceramic substrate contains carbon, the thermal conductivity becomes high, especially at high temperatures, and rapid temperature rising / falling can be performed. further,
Since the thickness of the chuck top can be made thinner than that of metal, the heat capacity can be reduced and the temperature rising / falling characteristics can be further improved.

Further, the ceramic substrate contains carbon, and by setting the content to a certain level or more, it is blackened and the guard electrode and the ground electrode can be hidden. Further, ceramics generally have a low thermal conductivity at high temperatures, but the inclusion of carbon suppresses the reduction in thermal conductivity at high temperatures and maintains high thermal conductivity even at high temperatures. be able to.

Further, in the present invention, since the substrate made of highly rigid ceramic is used, even if the chuck top is pushed by the tester pin of the probe card, the chuck top does not warp, and the thickness of the chuck top is made of metal. It can be made thinner than.

FIG. 1 is a sectional view schematically showing an embodiment of the wafer prober of the present invention, FIG. 2 is a plan view thereof, FIG. 3 is a bottom view thereof, and FIG. 2 is a cross-sectional view taken along the line AA of the wafer prober shown in FIG.

In this wafer prober 101, concentric circular grooves 7 are formed on the surface of the ceramic substrate 3 which is circular in plan view, and a plurality of suction holes 8 for sucking the silicon wafer are formed in a part of the grooves 7. The chuck top conductor layer 2 for connecting to the electrodes of the silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 7.

On the other hand, on the bottom surface of the ceramic substrate 3, there are provided concentric heating elements 41 in plan view as shown in FIG. 3 in order to control the temperature of the silicon wafer. Has an external terminal pin 191 connected and fixed thereto. Further, a guard electrode 5 and a ground electrode 6 are provided inside the ceramic substrate 3 to remove stray capacitors and noise, but since the ceramic substrate 3 contains a predetermined amount of carbon. It is blackened and the guard electrode 5 and the ground electrode 6 are hidden.

The wafer prober of the present invention is shown in FIG.
~ 4 has a configuration as shown. In the following, each member constituting the wafer prober, and
Other embodiments of the wafer prober of the present invention will be sequentially described in detail.

In the present invention, since the ceramic substrate contains carbon, the thermal conductivity at high temperature is high and the temperature rising / falling characteristics are excellent. By containing a predetermined amount or more of carbon, the ceramic substrate can be blackened to hide the guard electrode, the ground electrode, etc., and the black wafer radiant heat can be used to efficiently heat the silicon wafer. You can

The content of carbon in the ceramic substrate is 80
~ 5100 ppm is preferred. Carbon content is 80 ppm
If it is less than 1, the thermal conductivity of the ceramic substrate at high temperature is lowered, and the temperature rising / falling characteristics are deteriorated. Further, whitening and transparency of the ceramic substrate progress, and color unevenness easily occurs.
On the other hand, when the carbon content exceeds 5100 ppm, it is difficult to disperse the carbon uniformly, and the carbon hinders the sintering, so that the sintered density decreases and the thermal conductivity at high temperature decreases on the contrary. .

Even if the carbon content is 5100 ppm or less, the volume resistivity is low, and if the guard electrode, the ground electrode, the resistance heating element, etc. are directly formed in the ceramic substrate,
In some cases, dielectric breakdown may occur. However, by forming an insulating layer made of a glass layer or the like so as to cover the periphery of the guard electrode, the ground electrode, the resistance heating element, etc., the inside of the resistance heating element, the mutual electrodes, and the electrode and the resistance heating element There is no risk of dielectric breakdown between them, and the function as a wafer prober (ceramic substrate for wafer prober) can be ensured. The content of carbon is preferably 100 to 5000 ppm, and 500
-2000 ppm is more desirable. It is possible to sufficiently hide the guard electrode, the ground electrode, etc., and prevent the thermal conductivity from decreasing at high temperatures.

Carbon may be a crystalline substance such as graphite or acetylene black which can be detected by X-ray diffraction, and cannot be detected by X-ray diffraction of carbon black or the like produced by incomplete combustion of petroleum or the like. May be amorphous or a mixture of both. Further, when degreasing the green molded body, a method may be used in which the binder made of an acrylic resin or the like is degreased in a non-oxidizing atmosphere so that carbon remains in the sintered body. By thus containing carbon in the ceramic substrate, the high temperature thermal conductivity of the ceramic substrate can be improved. In particular, when crystalline carbon is used, the high temperature thermal conductivity can be further improved. On the other hand, when amorphous carbon is used, a decrease in volume resistivity at high temperature can be suppressed.

FIG. 13 is a graph schematically showing the relationship between the temperature and the volume resistivity of the ceramic substrate containing 800 ppm of carbon. The volume resistivity decreases as the temperature rises. Also, crystalline carbon
In the case of using, the volume resistivity is lower than in the case of using amorphous carbon. Also, FIG.
4 is a graph schematically showing the relationship between temperature and thermal conductivity of a ceramic substrate containing 800 ppm of carbon.
As shown in FIG. 14, the high temperature thermal conductivity is higher when crystalline carbon is used. Therefore, the blending amount of crystalline carbon and amorphous carbon is adjusted by giving priority to either volume resistivity or thermal conductivity. However, even if amorphous carbon is used, the decrease in the thermal conductivity at high temperature is smaller than that of the non-added carbon.

JIS Z 872 of the above ceramic substrate
The lightness based on 1 is preferably N4 or less. The brightness is a scale indicating a visual attribute for determining whether the reflectance of the object surface is high or low. JIS Z 872
The lightness based on 1 is based on an achromatic color, and the ideal lightness of black is 0 and the ideal lightness of white is 10. Between ideal black and ideal white, each color is divided into 10 so that the perception of the brightness of the color becomes equal, and N0 to N10 are divided.
Display with the symbol. When measuring the brightness of an actual aluminum nitride sintered body, the standard color charts corresponding to N0 to N10 are compared with the surface color of the aluminum nitride sintered body to determine the brightness of the aluminum nitride sintered body. To do. At this time, in principle, the lightness is determined up to the first decimal place, and the value at the first decimal place is 0 or 5.

JIS Z 872 of the above ceramic substrate
When the lightness based on 1 is N4 or less, the degree of blackening is large, so it is possible to fully utilize the black body radiant heat during heating, and also to sufficiently hide the internal guard electrode, ground electrode, etc. You can

In order to contain carbon in the ceramic substrate, carbon powder is added when the ceramic powder as a raw material of the ceramic substrate is mixed to produce a green sheet. In that case, for example, sucrose or the like is added. It is possible to use carbonized materials such as carbonized sugars and polymer substances that are easily carbonized.

The ceramic substrate used in the wafer prober of the present invention is preferably at least one selected from the group consisting of nitride ceramics, carbide ceramics and oxide ceramics.

Examples of the nitride ceramics include metal nitride ceramics such as aluminum nitride, silicon nitride, boron nitride and titanium nitride. Further, as the above-mentioned carbide ceramics, metal carbide ceramics,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples thereof include tantalum carbide and tantalum carbide.

Examples of the oxide ceramics include metal oxide ceramics such as alumina, zirconia, cordierite and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Aluminum nitride is most preferable among the nitride ceramics. This is because the highest thermal conductivity is 180 W / m · K.

The thickness of the ceramic substrate of the chuck top in the present invention needs to be thicker than that of the chuck top conductor layer, and specifically 1 to 10 mm is desirable. Further, in the present invention, since the back surface of the silicon wafer is used as an electrode, the chuck top conductor layer is formed on the front surface of the ceramic substrate.

The thickness of the chuck top conductor layer is from 1 to
20 μm is desirable. This is because if it is less than 1 μm, the resistance value becomes too high to function as an electrode, and if it exceeds 20 μm, peeling easily occurs due to the stress of the conductor.

As the chuck top conductor layer, for example,
At least one metal selected from refractory metals such as copper, titanium, chromium, nickel, noble metals (gold, silver, platinum, etc.), tungsten, molybdenum, etc. can be used.

The chuck top conductor layer may be a porous body made of metal or conductive ceramic. In the case of a porous body, it is not necessary to form a groove for suction and adsorption as described later, it is possible to prevent the damage of the wafer due to the existence of the groove and also to uniformly suck and adsorb the entire surface. This is because A metal sintered body can be used as such a porous body. Moreover, when a porous body is used, the thickness thereof can be 1 to 200 μm. A solder or a brazing material is used for joining the porous body and the ceramic substrate.

The chuck top conductor layer preferably contains nickel. This is because the hardness is high and it is difficult to deform even when the tester pin is pressed. As a concrete configuration of the chuck top conductor layer, for example, a nickel sputtering layer is first formed, and an electroless nickel plating layer is provided thereon, or titanium, molybdenum and nickel are sputtered in this order, and The thing etc. which made nickel deposit on it by electroless plating or electrolytic plating etc. are mentioned.

Alternatively, titanium, molybdenum, and nickel may be sputtered in this order, and copper and nickel may be deposited thereon by electroless plating. This is because the resistance value of the chuck top electrode can be reduced by forming the copper layer.

Further, titanium and copper may be sputtered in this order, and nickel may be deposited thereon by electroless plating or electroless plating. Alternatively, chromium and copper may be sputtered in this order, and nickel may be deposited thereon by electroless plating or electroless plating.

Titanium and chromium can improve the adhesion to ceramics, and molybdenum can improve the adhesion to nickel. The thickness of titanium and chromium is 0.1 to 0.5 μm, the thickness of molybdenum is 0.5 to 7.0 μm, and the thickness of nickel is 0.4 to 2.5.
μm is desirable.

It is desirable that a precious metal layer (gold, silver, platinum, palladium) be formed on the surface of the chuck top conductor layer. This is because the noble metal layer can prevent contamination due to migration of the base metal. The thickness of the noble metal layer is preferably 0.01 to 15 μm.

In the present invention, it is desirable to provide the ceramic substrate with temperature control means. This is because the continuity test of the silicon wafer can be performed while heating or cooling.

As the temperature control means, a Peltier element may be used in addition to the heating element 41 shown in FIG. When the heating element is provided, a blowing port for a cooling medium such as air may be provided as a cooling means. The heating element may be provided in a plurality of layers. In this case, it is desirable that the patterns of the respective layers are formed so as to complement each other, and the pattern is formed in any of the layers as viewed from the heating surface. For example, a structure in which staggered arrangement is provided.

Examples of the heating element include a sintered body of metal or conductive ceramic, a metal foil, a metal wire and the like. The metal sintered body is preferably at least one selected from tungsten and molybdenum. This is because these metals are relatively difficult to oxidize and have a resistance value sufficient to generate heat.

As the conductive ceramic, at least one selected from carbides of tungsten and molybdenum is used.
Seeds can be used. Further, when the heating element is formed on the outside of the ceramic substrate, it is desirable to use a noble metal (gold, silver, palladium, platinum) or nickel as the metal sintered body. Specifically, silver, silver-palladium, or the like can be used. The metal particles used in the metal sintered body may be spherical, flaky, or a mixture of spherical and flaky.

A metal oxide may be added to the metal sintered body. The reason why the above metal oxide is used is to bring the nitride ceramic or the carbide ceramic into close contact with the metal particles. It is not clear why the metal oxide improves the adhesion between the nitride ceramic or the carbide ceramic and the metal particle, but a slight oxide film is formed on the surface of the metal particle and the surface of the nitride ceramic or the carbide ceramic. Therefore, it is considered that the oxide films are sintered and integrated with each other through the metal oxide, and the metal particles and the nitride ceramic or the carbide ceramic adhere to each other.

Examples of the above metal oxide include, for example, oxidation.
Lead, zinc oxide, silica, boron oxide (B ₂ O₃ ), Al
At least one selected from Mina, Yttria, and Titania
Seeds are preferred. These oxides increase the resistance value of the heating element.
Metal particles and nitride ceramic or
This is because the adhesion with the carbide ceramic can be improved.

The above-mentioned metal oxide has a metal content of 0.
It is desirable to be 1% by weight or more and less than 10% by weight. This is because the resistance value does not become too large and the adhesion between the metal particles and the nitride ceramic or the carbide ceramic can be improved.

The proportions of lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania are such that when the total amount of metal oxide is 100 parts by weight, lead oxide is 1 to 1. 10 parts by weight, 1 to 30 parts by weight of silica, 5 to 50 parts by weight of boron oxide, 20 to 7 of zinc oxide.
0 parts by weight, alumina 1 to 10 parts by weight, yttria 1
.About.50 parts by weight, and titania is preferably 1 to 50 parts by weight. However, it is desirable that the total amount of these components be adjusted within a range not exceeding 100 parts by weight. This is because these ranges are ranges in which the adhesion with the nitride ceramic can be improved.

When the heating element is provided on the surface of the ceramic substrate, it is desirable that the surface of the heating element is covered with the metal layer 410 (see FIG. 11 (e)). The heating element is a sintered body of metal particles, and if it is exposed, it is easily oxidized, and this oxidation changes the resistance value. Therefore, by coating the surface with a metal layer, oxidation can be prevented.

The thickness of the metal layer is preferably 0.1 to 10 μm. This is because the range can prevent oxidation of the heating element without changing the resistance value of the heating element. The metal used for coating may be a non-oxidizing metal. Specifically, at least one selected from gold, silver, palladium, platinum and nickel is preferable. Of these, nickel is more preferable. This is because the heating element needs a terminal for connecting to a power source, and this terminal is attached to the heating element via solder, but nickel prevents heat diffusion of the solder. A terminal pin made by Kovar can be used as the connection terminal. In addition, when the heating element is formed inside the heater plate, the surface of the heating element is not oxidized, and thus coating is unnecessary. When the heating element is formed inside the heater plate, a part of the surface of the heating element may be exposed.

As the metal foil used as the heating element, it is desirable to use a nickel foil or a stainless foil as a heating element by patterning by etching or the like. The patterned metal foil may be laminated with a resin film or the like. Examples of the metal wire include a tungsten wire and a molybdenum wire.

When a Peltier element is used as the temperature control means, heat is generated by changing the direction of current flow.
This is advantageous because both cooling can be performed. As shown in FIG. 7, the Peltier element is a p-type or n-type thermoelectric element 440.
Are connected in series and are joined to a ceramic plate 441 or the like. As a Peltier element,
For example, a silicon / germanium-based material, a bismuth / antimony-based material, a lead / tellurium-based material, or the like can be used.

In the present invention, it is desirable that at least one conductive layer is formed between the temperature control means and the chuck top conductive layer. The guard electrode 5 and the ground electrode 6 in FIG. 1 correspond to the conductor layer. Guard electrode 5
Is an electrode for canceling the stray capacitor interposed in the measurement circuit, and is supplied with the ground potential of the measurement circuit (that is, the chuck top conductor layer 2 in FIG. 1).
The ground electrode 6 is provided to cancel noise from the temperature control means. The thickness of these electrodes is preferably 1 to 20 μm. If it is too thin, the resistance value will be high, and if it is too thick, the ceramic substrate will warp and the thermal shock resistance will decrease.

These guard electrode 5 and ground electrode 6
Are preferably provided in a grid pattern as shown in FIG. That is, a large number of rectangular conductor layer non-forming portions 52 are arranged inside the circular conductor layer 51. This shape is used to improve the adhesion between the ceramics above and below the conductor layer. It is desirable that the surface of the wafer prober of the present invention on which the chuck top conductor layer is formed is provided with the groove 7 and the air suction hole 8 as shown in FIG. A plurality of suction holes 8 are provided to achieve uniform suction. This is because the silicon wafer W can be placed and the air can be sucked from the suction holes 8 to suck the silicon wafer W.

As the wafer prober in the present invention,
For example, as shown in FIG. 1, a heating element 41 is provided on the bottom surface of the ceramic substrate 3, and a layer of the guard electrode 5 and a layer of the ground electrode 6 are provided between the heating element 41 and the chuck top conductor layer 2, respectively. The wafer prober 101 having the above structure is provided with the flat heating element 42 inside the ceramic substrate 3 as shown in FIG. 5, and the guard electrode 5 and the ground electrode 6 are provided between the heating element 42 and the chuck top conductor layer 2. A wafer prober 201 having a structure in which a metal wire 43 as a heating element is embedded inside the ceramic substrate 3 as shown in FIG. 6, and a guard electrode 5 is formed between the metal wire 43 and the chuck top conductor layer 2. A wafer prober 301 having a structure provided with a ground electrode 6, and a Peltier device 44 as shown in FIG.
The Peltier element 44 (consisting of the thermoelectric element 440 and the ceramic substrate 441) is formed on the outside of the ceramic substrate 3.
Wafer prober 401 having a structure in which the guard electrode 5 and the ground electrode 6 are provided between the chuck top conductor layer 2 and the chuck top conductor layer 2.
Etc. Each wafer prober always has a groove 7 and a suction hole 8.

In the present invention, heating elements 42 and 43 are formed inside the ceramic substrate 3 as shown in FIGS. 1 to 7 (FIGS. 5 to 6), and the guard electrode 5 and the ground electrode 6 are formed inside the ceramic substrate 3. (FIGS. 1 to 7) are formed, and therefore a connecting portion (through hole) for connecting these to external terminals 1
6, 17, 18 are required. Through holes 16, 1
7, 18 are formed by filling a refractory metal such as tungsten paste or molybdenum paste, or a conductive ceramic such as tungsten carbide or molybdenum carbide.

Further, the connecting portions (through holes) 16, 1
The diameter of 7, 18 is preferably 0.1 to 10 mm. This is because it is possible to prevent cracks and distortions while preventing disconnection. External terminal pins are connected using the through holes as connection pads (see FIG. 11 (g)).

Connection is made with solder or brazing material. As a brazing material, silver brazing, palladium brazing, aluminum brazing,
Use gold wax. Au-Ni alloy is preferable for gold brazing. This is because the Au-Ni alloy has excellent adhesion to tungsten.

The Au / Ni ratio is [81.5 to 82.
5 (wt%)] / [18.5 to 17.5 (wt%)] is desirable. The thickness of the Au—Ni layer is preferably 0.1 to 50 μm. This is because the range is sufficient to secure the connection.
Moreover, at a high vacuum of 10 ⁻⁶ to 10 ⁻⁵ Pa, 500 ° C. to 100 ° C.
When used at a high temperature of 0 ° C., the Au—Cu alloy deteriorates, but the Au—Ni alloy is advantageous because it does not deteriorate. The total amount of impurity elements in the Au-Ni alloy is 1
When the amount is 00 parts by weight, it is preferably less than 1 part by weight.

In the present invention, a thermocouple can be embedded in the ceramic substrate if necessary. This is because the temperature of the heating element can be measured with a thermocouple and the temperature can be controlled by changing the voltage and current amount based on the data.
The size of the joining portion of the metal wires of the thermocouple is equal to or larger than the wire diameter of each metal wire, and 0.
5 mm or less is preferable. With such a configuration, the heat capacity of the joint portion is reduced, and the temperature is converted into a current value accurately and quickly. Therefore, the temperature controllability is improved and the temperature distribution on the heating surface of the wafer is reduced. As the thermocouple, for example, JIS-C-160
2 (1980), K type, R type, B type
Type, S type, E type, J type, and T type thermocouples.

FIG. 8 is a cross-sectional view schematically showing the support container 11 for installing the wafer prober of the present invention having the above structure. A coolant outlet 12 is formed in the support container 11, and the coolant is blown from the coolant inlet 14. Further, air is sucked from the suction port 13 and the silicon wafer (not shown) placed on the wafer prober is sucked into the groove 7 through the suction hole 8.

FIG. 9 (a) is a horizontal sectional view schematically showing another example of the supporting container, and FIG. 9 (b) is a sectional view taken along line BB in FIG. 9 (a). As shown in FIG. 9, the support container 21 is provided with a large number of support columns 15 so that the wafer prober does not warp due to the pressing of the tester pins of the probe card. An aluminum alloy, stainless steel, etc. can be used for a support container.

Next, an example of the method for manufacturing the wafer prober of the present invention will be described with reference to the sectional views shown in FIGS. (1) First, a powder of ceramics such as oxide ceramics, nitride ceramics, and carbide ceramics is mixed with carbon, a binder, and a solvent to produce the green sheet 3
Get 0.

As the above-mentioned ceramic powder, for example, aluminum nitride, silicon carbide or the like can be used, and if necessary, a sintering aid such as yttria may be added. The carbon may be carbonized from sucrose or a high molecular substance, or may be carbon powder such as carbon black. The carbon may be crystalline or amorphous.

The binder is preferably at least one selected from acrylic binders, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, the solvent is preferably at least one selected from α-terpineol and glycol. The paste obtained by mixing these is formed into a sheet by a doctor blade method to produce a green sheet 30.

If necessary, the green sheet 30 may be provided with through holes for inserting the support pins of the silicon wafer and recesses for embedding the thermocouple. Through holes and recesses
It can be formed by punching or the like. The thickness of the green sheet 30 is preferably about 0.1 to 5 mm.

Next, the green sheet 30 is provided with a guard electrode,
Print the ground electrode. Printed on the green sheet 30
Is performed so as to obtain a desired aspect ratio in consideration of the contraction rate of the guard electrode printed matter 50 and the ground electrode printed matter 60. The printed body is formed by printing a conductive paste containing conductive ceramics, metal particles and the like.

Carbide of tungsten or molybdenum is most suitable as the conductive ceramic particles contained in these conductive pastes. This is because it is difficult to oxidize and the thermal conductivity does not easily decrease. Further, as the metal particles, for example, tungsten, molybdenum, platinum, nickel or the like can be used.

The average particle diameter of the conductive ceramic particles and the metal particles is preferably 0.1 to 5 μm. This is because it is difficult to print the paste when these particles are too large or too small. As such a paste, 85 to 97 parts by weight of metal particles or conductive ceramic particles, at least one binder selected from acrylic, ethyl cellulose, butyl cellosolve and polyvinyl alcohol 1.5
The paste prepared by mixing 10 to 10 parts by weight, 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol, glycol, ethyl alcohol and butanol is most suitable. Further, the holes formed by punching or the like are filled with a conductive paste, and the through-hole printed body 16 is formed.
You get 0,170.

Next, as shown in FIG. 10A, the green sheet 3 having the printed bodies 50, 60, 160 and 170.
0 and the green sheet 30 having no printed body are laminated. Green sheet 3 that does not have a printed body on the heating element formation side
The reason why 0 is stacked is to prevent the end face of the through hole from being exposed and being oxidized during firing for forming the heating element. If the firing for forming the heating element is performed with the end face of the through hole exposed, it is necessary to sputter a metal that is difficult to oxidize such as nickel, and more preferably, even if it is covered with Au—Ni gold brazing. Good.

(2) Next, as shown in FIG.
The laminated body is heated and pressed to sinter the green sheet and the conductive paste. The heating temperature is 1000-2
The pressure and pressure are preferably 100 to 200 kg / cm ² , and the heating and pressurization are performed in an inert gas atmosphere. As the inert gas, argon, nitrogen or the like can be used. Through holes 16 and 1 in this process
7, the guard electrode 5, and the ground electrode 6 are formed. Further, since the ceramic substrate contains carbon, it is blackened.

(3) Next, as shown in FIG.
Grooves 7 are provided on the surface of the sintered body by sandblasting or the like through a mask. (4) Next, as shown in FIG. 10 (d), a conductive paste is printed on the bottom surface of the sintered body and fired to produce the heating element 41. The formed heating element 41 firmly adheres to the surface of the ceramic substrate.

(5) Next, as shown in FIG.
After sputtering titanium, molybdenum, nickel or the like on the wafer mounting surface (groove forming surface), electroless nickel plating or the like is performed to provide the chuck top conductor layer 2. At the same time, a protective layer 410 is formed on the surface of the heating element 41 by electroless nickel plating or the like.

(6) Next, as shown in FIG.
A suction hole 8 penetrating from the groove 7 to the back surface and a blind hole 180 for connecting an external terminal are provided. It is preferable that at least a part of the inner wall of the blind hole 180 is made conductive, and the made conductive inner wall is connected to the guard electrode 5, the ground electrode 6, and the like.

(7) Finally, as shown in FIG. 11 (g), after the solder paste is printed on the mounting portion on the surface of the heating element 41, the external terminal pins 191 are mounted and heated for reflow. The heating temperature is preferably 200 to 500 ° C.

External terminals 19 and 190 are also provided in the bag hole 180 through a brazing filler metal. Further, if necessary, a bottomed hole may be provided and a thermocouple may be embedded inside the hole. As the solder, an alloy such as silver-lead, lead-tin, bismuth-tin can be used. The thickness of the solder layer is
0.1 to 50 μm is desirable. This is because the range is sufficient to secure the connection with solder.

In the above description, the wafer prober 101
Although the wafer prober 201 (see FIG. 5) is manufactured, the heating element may be printed on the green sheet. Further, when the wafer prober 301 (see FIG. 6) is manufactured, a metal plate as a guard electrode and a ground electrode in the ceramic powder, and a metal wire as a heating element may be embedded and sintered. Further, when the wafer prober 401 (see FIG. 7) is manufactured, the Peltier element may be joined via the sprayed metal layer.

[0078]

The present invention will be described in more detail below. (Example 1) Production of wafer prober 101 (see Fig. 1) (1) First, carbon was obtained by heating sucrose in air at 500 ° C. Next, 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm),
Using a doctor blade method, a mixed composition obtained by mixing 4 parts by weight of yttria (average particle size 0.4 μm), 0.09 part by weight of the above carbon, and 53 parts by weight of alcohol consisting of 1-butanol and ethanol was used. Molded using
A green sheet having a thickness of 0.47 mm was obtained.

(2) Next, this green sheet is heated to 80 ° C.
After drying for 5 hours, a through hole for through hole for connecting the heating element and the external terminal pin was provided by punching. (3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, α-
3.5 parts by weight of a terpineol solvent and 0.3 part by weight of a dispersant were mixed to prepare a conductive paste A. Also, 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, and α-terpineol solvent were added in an amount of 3.
7 parts by weight and 0.2 parts by weight of a dispersant were mixed to prepare a conductive paste B.

Next, the grid-shaped print body for guard electrode 50 and the print body for ground electrode 60 were printed on the green sheet by screen printing using the conductive paste A. Further, the conductive paste B was filled in the through holes for through holes for connecting to the terminal pins.

Further, 50 printed green sheets and 50 unprinted green sheets are laminated to form 1
A laminated body was produced by integrating at 30 ° C. and a pressure of 80 kg / cm ² (see FIG. 10A).

(4) Next, this laminated body was subjected to 6 in nitrogen gas.
Degreasing at 00 ℃ for 5 hours, 1890 ℃, pressure 150kg /
It was hot-pressed at cm ² for 3 hours to obtain an aluminum nitride plate-shaped body having a thickness of 3 mm. The obtained plate-shaped body has a diameter of 230
A circular plate of mm was cut out to obtain a ceramic plate-like body (see FIG. 10B). The through holes 16 and 17 had a diameter of 0.2 mm and a depth of 0.2 mm. The thickness of the guard electrode 5 and the ground electrode 6 is 10 μm,
The formation position of the guard electrode 5 is 1 mm from the wafer mounting surface,
The formation position of the ground electrode 6 is 1.2 from the wafer mounting surface.
It was mm. The size of one side of the conductor non-formation area (square) of the guard electrode 5 and the ground electrode 6 is 0.5.
It was mm.

(5) After polishing the plate-like body obtained in (4) above with a diamond grindstone, a mask is placed and a blast treatment with SiC or the like is performed on the surface to form a concave portion for a thermocouple (not shown). Further, a groove 7 (width 0.5 mm, depth 0.5 mm) for adsorbing the wafer was provided. (FIG.10 (c)).

(6) Further, the heating element 41 is printed on the surface facing the wafer mounting surface. The printing used conductive paste. The conductive paste is Solbest PS manufactured by Tokuriki Kagaku Kenkyusho, which is used for forming through holes in printed wiring boards.
603D was used. This conductive paste is a silver / lead paste, including lead oxide, zinc oxide, silica, boron oxide,
Metal oxide made of alumina (the weight ratio of each is
5/55/10/25/5) in an amount of 7.5 parts by weight based on 100 parts by weight of silver. Further, the silver had a scaly shape with an average particle size of 4.5 μm.

(7) The heater plate on which the conductive paste was printed was heated and fired at 780 ° C. to sinter silver and lead in the conductive paste and bake it on the ceramic substrate 3. Further, the heater plate was dipped in an electroless nickel plating bath made of an aqueous solution containing 30 g / l of nickel sulfate, 30 g / l of boric acid, 30 g / l of ammonium chloride and 60 g / l of Rochelle salt, and the surface of the silver sintered body 41 was immersed. A nickel layer 410 having a thickness of 1 μm and a boron content of 1 wt% or less was deposited. Then, the heater plate was annealed at 120 ° C. for 3 hours. The heating element made of a silver sintered body has a thickness of 5 μm, a width of 2.4 mm, and an area resistivity of 7.7 m.
It was Ω / □ (Fig. 10 (d)).

(8) A titanium layer, a molybdenum layer, and a nickel layer were sequentially formed on the surface where the groove 7 was formed by a sputtering method. As an apparatus for sputtering, SV-4540 manufactured by Nippon Vacuum Technology Co., Ltd. was used. The conditions of sputtering were atmospheric pressure of 0.6 Pa, temperature of 100 ° C., and electric power of 200 W, and the sputtering time was adjusted within the range of 30 seconds to 1 minute by each metal. The thickness of the obtained film was 0. 0 for the titanium layer from the image of the fluorescent X-ray analyzer.
3 μm, the molybdenum layer was 2 μm, and the nickel layer was 1 μm.

(9) Nickel sulfate 30 g / l, boric acid 3
The surface of the metal layer formed by sputtering by immersing the ceramic plate obtained in (8) above in an electroless nickel plating bath consisting of an aqueous solution containing 0 g / l, ammonium chloride 30 g / l and Rochelle salt 60 g / l Then, a nickel layer having a thickness of 7 μm and a boron content of 1% by weight or less was deposited and annealed at 120 ° C. for 3 hours. The surface of the heating element does not carry an electric current and is not covered with electrolytic nickel plating.

Furthermore, potassium gold cyanide 2 g /
1, ammonium chloride 75 g / l, sodium citrate 50 g / l, and sodium hypophosphite 10 g / l in an electroless gold plating solution at 93 ° C. for 1 minute.
A gold plating layer having a thickness of 1 μm was formed on the nickel plating layer 15 (see FIG. 11 (e)).

(10) An air suction hole 8 extending from the groove 7 to the rear surface is formed by drilling, and the through hole 1 is further formed.
A bag hole 180 is provided to expose 6 and 17 (see FIG. 1).
0 (f)). Ni-Au alloy (A
u 81.5% by weight, Ni 18.4% by weight, impurities 0.1
(% By weight) was used to heat and reflow the solder at 970 ° C. to connect the external terminal pins 19 and 190 made of Kovar (see FIG. 11 (g)). Further, an external terminal pin 191 made of Kovar was formed on the heating element via solder (90% by weight of tin / 10% by weight of lead).

(11) Next, a plurality of thermocouples for temperature control were embedded in the recess to obtain a wafer prober heater 101.

(Example 2) In the process of (4), the laminate prepared by laminating the green sheets was degreased at 300 ° C for 6 hours in a nitrogen gas atmosphere containing oxygen. A wafer prober was manufactured in the same manner as in 1.

Example 3 A wafer prober was manufactured in the same manner as in Example 1 except that 0.6 part by weight of carbon was added in the step (1).

(Example 4) (1) Silicon carbide powder (Yakushima Electric Co., Ltd. Diasik
C-1000, average particle size 1.1 μm) 100 parts by weight, yttria (average particle size 0.4 μm) 4 parts by weight, and 1
-Alcohol 53 consisting of butanol and ethanol
The mixed composition obtained by mixing the parts by weight was molded using a doctor blade to obtain a green sheet having a thickness of 0.47 mm. The silicon carbide powder contains 5% by weight of carbon at the raw material stage.

(2) Next, a glass paste for insulation is applied to this green sheet and then dried at 80 ° C. for 5 hours, followed by punching through holes for connecting the heating element and external terminals. A through hole is provided.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm and an acrylic binder of 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A. Further, 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent and 0.2 part by weight of a dispersant were mixed to prepare a conductor paste B.

Next, a grid-like printed body for guard electrodes and a printed body for ground electrodes were printed on the surface of the green sheet to which the glass paste was applied by screen printing using the conductor paste A. After printing, glass paste was further applied to cover the electrodes. Further, the conductor paste B was filled in the through holes for through holes for connecting to the external terminals.

Further, 50 green sheets printed with the conductor paste and 50 green sheets not printed with the conductor paste were laminated by the above-mentioned process, and the temperature was kept at 130 ° C. for 8 hours.
A laminated body was produced by integrating at a pressure of 0 kg / cm ² .

(4) Next, this laminated body was subjected to 6
Degreasing at 00 ℃ for 5 hours, 1890 ℃, pressure 150kg /
It was hot-pressed at cm ² for 3 hours to obtain an aluminum nitride plate-shaped body having a thickness of 3 mm. The plate-shaped body thus obtained has a diameter of 300.
A circular plate of mm was cut out to obtain a ceramic plate-like body. The size of the through hole was 0.2 mm in diameter and 0.2 mm in depth. The thickness of the guard electrode and the ground electrode was 10 μm, the formation position of the guard electrode was 1 mm from the wafer mounting surface, and the formation position of the ground electrode was 1.2 mm from the wafer mounting surface. Further, the size of one side of the conductor non-formation region of the guard electrode and the ground electrode is 0.
It was 5 mm.

(5) After polishing the plate-like body obtained in (4) above with a diamond grindstone, tetraethyl silicate 25
A mixed solution consisting of 3 parts by weight of ethanol, 37.6 parts by weight of ethanol and 0.3 part by weight of hydrochloric acid was hydrolyzed and polymerized while stirring for 24 hours, and then applied by spin coating.
It was dried at 0 ° C. for 5 hours and baked at 1000 ° C. for 1 hour to form an insulating layer made of a SiO ₂ film having a thickness of 2 μm on the surface of the ceramic substrate 11. Further, a mask is placed on the ceramic substrate having this insulating layer, and a recess for a thermocouple and a groove for wafer adsorption (width 0.5 mm, depth 0.5 mm) are formed on the surface by blasting with SiC or the like. Provided.

(6) Further, a layer for forming a heating element was printed on the surface facing the wafer mounting surface. The conductor paste was used for printing. As this conductor paste, Solbest PS603D manufactured by Tokuriki Kagaku Kenkyusho Co., Ltd., which is used for forming through holes in printed wiring boards, was used. This conductor paste is a silver / lead paste, and a metal oxide consisting of lead oxide, zinc oxide, silica, boron oxide, and alumina (the weight ratio of each is 5/55/10/25/5) is silver 1
The amount was 7.5 parts by weight based on 00 parts by weight. Further, the silver had a scaly shape with an average particle size of 4.5 μm.

(7) The heater plate on which the conductor paste was printed was heated and fired at 780 ° C. to sinter silver and lead in the conductor paste and bake it on the ceramic substrate. Further, the heater plate is immersed in an electroless nickel plating bath consisting of an aqueous solution containing 30 g / l of nickel sulfate, 30 g / l of boric acid, 30 g / l of ammonium chloride, and 60 g / l of Rochelle salt to make a thick film on the surface of the sintered silver body. A nickel layer having a thickness of 1 μm and a boron content of 1% by weight or less was deposited. Then, the heater plate was annealed at 120 ° C. for 3 hours. The heating element made of a silver sintered body has a thickness of 5 μm,
The width was 2.4 mm, and the sheet resistivity was 7.7 mΩ / □.

(8) A titanium layer, a molybdenum layer, and a nickel layer were sequentially formed on the surface where the groove was formed by a sputtering method. As an apparatus for sputtering, SV-4540 manufactured by Nippon Vacuum Technology Co., Ltd. was used. The sputtering conditions are atmospheric pressure of 0.6 Pa, temperature of 100 ° C., and electric power of 200.
W and the sputtering time was adjusted for each metal within the range of 30 seconds to 1 minute. The thickness of the obtained film was 0.3 μm for the titanium layer from the image of the fluorescent X-ray analyzer.
m, the molybdenum layer was 2 μm, and the nickel layer was 1 μm.

(9) Nickel sulfate 30 g / l, boric acid 3
The surface of the metal layer formed by sputtering by immersing the ceramic plate obtained in (8) above in an electroless nickel plating bath consisting of an aqueous solution containing 0 g / l, ammonium chloride 30 g / l and Rochelle salt 60 g / l Then, a nickel layer having a thickness of 7 μm and a boron content of 1% by weight or less was deposited and annealed at 120 ° C. for 3 hours. The surface of the heating element does not carry an electric current and is not covered with electrolytic nickel plating.

Furthermore, potassium gold cyanide 2 g /
1, ammonium chloride 75 g / l, sodium citrate 50 g / l, and sodium hypophosphite 10 g / l in an electroless gold plating solution at 93 ° C. for 1 minute.
A gold plating layer having a thickness of 1 μm was formed on the nickel plating layer.

(10) An air suction hole extending from the groove to the back surface was formed by drilling, and a blind hole for exposing the through hole was provided. Gold brazing made of Ni-Au alloy (Au 81.5% by weight, Ni 18.4% by weight, impurities 0.1% by weight) was used for this blind hole, and reflowed by heating at 970 ° C. to connect an external terminal made of Kovar. It was Further, an external terminal made of Kovar was provided on the heating element via solder (90% by weight of tin / 10% by weight of lead).

(11) Next, a plurality of thermocouples for temperature control were embedded in the recess to obtain a wafer prober heater. The guard electrode and the ground electrode of this wafer prober heater are covered with an insulating layer made of glass.

(Example 5) In the process of (4), except that the nitrogen gas containing oxygen was refluxed and the green sheet was laminated to perform degreasing at 300 ° C. for 6 hours. A wafer prober was manufactured in the same manner as in Example 1.

Example 6 A wafer prober was manufactured in the same manner as in Example 4 except that 2% by weight of graphite was further added in the step (1).

(Comparative Example 1) In the step of (4), nitrogen gas containing oxygen was refluxed, and a laminate produced by laminating green sheets was degreased at 300 ° C. for 24 hours and detected by total carbon analysis. A wafer prober was manufactured in the same manner as in Example 1 except that the carbon content was reduced to such an extent that it could not be achieved.

[0110] crushed measurement ceramic substrate of the evaluation methods (i) a carbon content was heated to 8 00 ° C. After the powder, by measuring the C O amount generated was measured carbon content. (Ii) Measurement of Thermal Conductivity and Volume Resistivity A columnar sample was cut out from the manufactured wafer prober, and the thermal conductivity at 200 ° C. was measured by the laser flash method. Also, 20
The volume resistivity at 0 ° C. was measured by the three-terminal method.

(Iii) Measurement of lightness Lightness was measured according to JIS Z 8721. (iv) Measurement of the difference between the maximum temperature and the minimum temperature The temperature of the silicon wafer is measured by raising the temperature of the wafer prober to 200 ° C. and placing the silicon wafer with 15 thermocouples on the wafer prober. , The difference between the highest temperature and the lowest temperature was investigated. The results are shown in Table 1 below.

[0112]

[Table 1]

As shown in Table 1, in the wafer probers according to Examples 1 to 3 , the carbon content was 80 to 5100 p.
the thermal conductivity at 200 ° C. is 10
It was as good as 0 W / m · K or more. In the case of Reference Example 4, although silicon carbide having a lower thermal conductivity than aluminum nitride was used as the material of the ceramic substrate, the thermal conductivity can be improved by increasing the carbon content. It was In the case of Reference Example 5, since the carbon content is as low as 45 ppm, the thermal conductivity at 200 ° C. is 98 W / m.
It was as low as K. Further, in the case of Reference Example 6, since the carbon content was too large as 60000 ppm, carbon hindered sintering and the thermal conductivity at 200 ° C. was as low as 90 W / m · K. On the other hand, in the wafer prober according to Comparative Example 1, the carbon content was so small that carbon could not be detected by the above-described carbon content measuring method, and as a result, 200 ° C.
The thermal conductivity at 80 W / mK decreased further.

In Examples 1 and 2 and Reference Example 5, the carbon content is 5000 ppm or less, and the volume resistivity at 200 ° C. is as high as 1.0 × 10 ¹² Ω · cm or more. As shown in 3, when the carbon content exceeds 5000 ppm, the volume resistivity at 200 ° C. is 1.0 × 10 ¹¹ Ω · c.
It has fallen to m. Therefore, in order to secure a high volume resistivity, it is most desirable to adjust the carbon content to 5000 ppm or less. Further, in the case of Reference Examples 4 and 6, the carbon content is 50000 ppm or more,
Since the volume resistivity is as low as 1.0 × 10 ⁴ Ω · cm, if an electrode is directly formed inside the ceramic substrate, dielectric breakdown may occur in the ceramic substrate. However, by covering the periphery of the electrode with an insulating layer, there is no risk of dielectric breakdown of the ceramic substrate, and it is possible to sufficiently function as a wafer prober.

Further, in the wafer probers according to Examples 1 to 3 and Reference Examples 4 to 6, the electrodes and the like can be hidden. That is, the wafer probers according to Examples 1 and 3 and Reference Examples 4 and 6 were black, and the wafer probers according to Example 2 were pale maroon. Both are JIS Z 872
The brightness based on 1 was 4 or less, and the guard electrode and the like could be sufficiently hidden. Further, the wafer prober according to Reference Example 5 had an uneven brownish color and a lightness of 5.5, but could almost conceal the guard electrode and the like. On the other hand, the wafer prober according to Comparative Example 1 was milky white and had a high brightness of 8.5, so that the contours of the guard electrode and the like were visible from the back side of the ceramic substrate.

Regarding the difference (temperature distribution) between the maximum temperature and the minimum temperature, the wafer prober according to the first to third embodiments is used.
That is, the wafer prober having a carbon content of 80 to 5100 ppm has a small value of 1 ° C. or less, and the wafer probers according to Examples 5 and 6 have a small value of 2 ° C. or less.
However, in the wafer prober according to Comparative Example 1, the temperature difference was as large as 8 ° C. This is presumed to be because the ceramic substrate does not contain carbon at all and the thermal conductivity at high temperature is low, so that the temperature difference becomes large.

[0117]

As described above, in the wafer prober of the present invention, since the ceramic substrate contains carbon, the thermal conductivity at high temperature is high and the temperature rising and cooling characteristics are excellent. Further, when the ceramic substrate contains a predetermined amount of carbon or more, it is blackened, the guard electrode and the ground electrode can be concealed, and the thermal conductivity at high temperature is secured.

If the volume resistivity does not drop so much at high temperature, dielectric breakdown will not occur.
It is possible to form electrodes, etc. in the ceramic substrate, and even if the volume resistivity is low, if the degree of decrease is small, an insulating layer is formed around the electrodes and the resistance heating element to form a ceramic substrate. It is possible to prevent the occurrence of dielectric breakdown.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing an example of a wafer prober of the present invention.

FIG. 2 is a plan view of the wafer prober shown in FIG.

FIG. 3 is a bottom view of the wafer prober shown in FIG.

4 is a cross-sectional view of the wafer prober shown in FIG. 1 taken along the line AA.

FIG. 5 is a sectional view schematically showing an example of the wafer prober of the present invention.

FIG. 6 is a sectional view schematically showing an example of the wafer prober of the present invention.

FIG. 7 is a sectional view schematically showing an example of the wafer prober of the present invention.

FIG. 8 is a sectional view schematically showing a case where the wafer prober of the present invention is combined with a support container.

9A is a vertical cross-sectional view schematically showing a case where the wafer prober of the present invention is combined with another supporting container, and FIG. 9B is a cross-sectional view taken along line BB thereof.

10 (a) to 10 (d) are cross-sectional views schematically showing a part of the manufacturing process of the wafer prober of the present invention.

11 (e) to (g) are cross-sectional views schematically showing a part of the manufacturing process of the wafer prober of the present invention.

FIG. 12 is a sectional view schematically showing a state in which a continuity test is performed using the wafer prober of the present invention.

FIG. 13 is a graph schematically showing the relationship between temperature and volume resistivity of a ceramic substrate containing carbon.

FIG. 14 is a graph schematically showing a relationship between temperature and thermal conductivity of a carbon-containing ceramic substrate.

[Explanation of symbols]

101, 201, 301, 401 Wafer prober 2 Chuck top conductor layer 3 Ceramic substrate 5 Guard electrode 6 ground electrode 7 groove 8 suction port 10 Insulation 11 Support container 12 Refrigerant outlet 13 Suction port 14 Refrigerant inlet 15 Support pillars 16, 17, 18 through holes 180 bag holes 19, 190, 191 External terminal pin 41, 42 heating element 410 Protective layer 43 metal wire 44 Peltier element 440 thermoelectric element 441 ceramic substrate 51 conductor layer 52 Conductor layer non-formation part

─────────────────────────────────────────────────── ─── Continued Front Page (51) Int.Cl. ⁷ Identification Code FI G01R 31/28 H01L 21/68 N H01L 21/68 H05B 3/10 C H05B 3/10 G01R 31/28 K (56) References JP-A-10-32239 (JP, A) JP-A-8-64663 (JP, A) JP-A-10-98092 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/66 G01R 1/06 G01R 1/073 G01R 31/26 G01R 31/28 H01L 21/68 H05B 3/10

Claims (4)

(57) [Claims] Together with the chuck top conductive layer is formed to 1. A surface of the ceramic substrate, wherein Ri Na has a bottom surface or internal to the heating element of the ceramic substrate, a semiconductor wafer flop
A wafer prober for performing roving , wherein the ceramic substrate contains 80 to 5100 ppm of carbon. 2. A ceramic substrate according to JIS Z 8721.
The wafer prober according to claim 1, wherein the lightness based on is less than N4. 3.Ceramic substrateChuck top on the surface of
With the conductor layer formed,The ceramic substrateBottom of
Do not have a heating element on the surface or insideThe semiconductor wafer
Functions as a wafer prober for roving
A ceramic substrate, The ceramic substrate contains 80 to 5100 ppm of carbon.
Have Wafer prober characterized byFunction as
DoCeramic substrate 4. A ceramic substrate according to JIS Z 8721.
Ceramic substrate brightness, which functions as a wafer prober according to claim 1 is N4 or less based on.