JP3396469B2 - Wafer prober and ceramic substrate used for wafer prober - Google Patents

Description

Detailed Description of the Invention

[0001]

[Detailed Description of the Invention]

[0002]

2. Description of the Related Art Semiconductors are extremely important products required in various industries.
It is manufactured by slicing a silicon single crystal into a predetermined thickness to manufacture a silicon wafer, and then forming various circuits and the like on the silicon wafer. In the manufacturing process of this semiconductor chip, a probing process for measuring and checking whether or not the electrical characteristics of the silicon wafer operate as designed is necessary at the stage of the silicon wafer, and a so-called prober is used for that purpose.

An example of such a prober is a patent.
No. 2587289, Japanese Patent Publication No. 3-4047
In Japanese Patent Laid-Open No. 11-31724, there is
Has a chuck top made of metal such as aluminum alloy or stainless steel
A wafer prober is disclosed. Such a
In the haplober, for example, as shown in FIG.
Place the silicon wafer W on the prober 501 and
Probe card 60 with tester pins on recon wafer W
Press 1 and apply voltage while heating and cooling to conduct electricity.
Do the test. In FIG. 12, V₃ Is a plow
Power supply 33, V applied to the bucard 601 ₂ Resistance heating
Power supply 32, V applied to body 41₁ Led chuck top
A power source 31 applied to the body layer 2 and the guard electrode 5,
The power supply 31 is also connected to the ground electrode 6 and is grounded.
There is.

[0004]

However, a wafer prober having such a metal chuck top has the following problems.
There were the following problems. First, since it is made of metal, the thickness of the chuck top must be large, about 15 mm. In order to make the chuck top thicker, a thin metal plate is pressed on the chuck top by the tester pins of the probe card, warping or distorting the metal plate of the chuck top, and placing it on the metal plate. This is because the silicon wafer may be damaged or tilted. Therefore, it is necessary to make the chuck top thick, but as a result, there is a problem that the weight of the chuck top becomes large and bulky.

In addition, even though a metal having a high thermal conductivity is used, the temperature rising and cooling characteristics are poor, and the temperature of the chuck top plate does not quickly follow changes in voltage or current amount. There is also a problem that it is difficult to control, and if the silicon wafer is placed at a high temperature, the temperature control becomes impossible.

[0006]

Therefore, the present inventors have
It was recalled that instead of the metal chuck top, a conductor layer was provided on the surface of a ceramic substrate having high rigidity and this was used as the chuck top conductor layer. However, if a temperature control means is provided on the ceramic substrate for heating, etc. The temperature of the outer peripheral surface of the ceramic substrate decreases, and as a result, the temperature of the chuck top conductor layer on which the silicon wafer is mounted also decreases in the peripheral portion, which is an unexpected problem. In addition, it is desirable to provide a conductor layer on the side surface of the ceramic substrate and connect this conductor layer to the ground layer inside the ceramic substrate to protect the guard electrode from noise, but the adhesion between the conductor layer and the ceramic substrate is poor. There was a case of peeling.

Therefore, the present inventors have made further studies,
By setting the surface roughness of the side surface adjacent to the surface forming the conductor layer in a predetermined range and reducing the contact area with the supporting container, it is possible to prevent the temperature of the outer peripheral surface of the ceramic substrate from decreasing. It was also found that the adhesion with the conductor layer can be improved by roughening the side surface of the ceramic substrate, and the present invention has been completed.

That is, the wafer prober of the first invention is
A wafer prober in which a chuck top conductor layer is formed on the surface of a ceramic substrate, wherein a JIS R 0 side surface adjacent to the surface on which the chuck top conductor layer is formed.
The surface roughness based on 601 is Rmax = 0.2 to 200 μ.
m Der is, the conductor layer is formed on a side surface of the ceramic substrate
It is characterized by being done. Second invention wafer plate
The rover is a chuck top conductor on the surface of the ceramic substrate.
A wafer prober having a layer formed thereon, comprising:
A heating element is formed on the ceramic substrate and
J on the side surface adjacent to the surface on which the back top conductor layer is formed
The surface roughness based on IS R 0601 is Rmax = 0.
2 to 200 μm and supports the above ceramic substrate
A supporting container for holding is provided. The ceramic substrate used in the wafer prober of the first aspect of the present invention is a ceramic substrate having a chuck top conductor layer formed on the surface thereof, and the chuck top conductor layer is formed on the ceramic substrate. JIS R 0 on the side surface adjacent to the raised surface
The surface roughness based on 601 is Rmax = 0.2 to 200 μ.
m der is, that the conductor layer formed on its side surface
Characterize . Used in the second invention wafer prober
The ceramic substrate has a chuck top conductor layer on its surface.
A ceramic substrate having a heating element
And the chuck top conductor layer is formed.
Of the side surface adjacent to the curved surface according to JIS R 0601
Roughness is Rmax = 0.2 to 200 μm, and
It is characterized by being supported by a support container.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION A wafer prober of the first invention (hereinafter, also including a ceramic substrate used for a wafer prober) is a wafer prober in which a chuck top conductor layer is formed on the surface of a ceramic substrate. , JI on the side surface adjacent to the surface on which the chuck top conductor layer is formed
The surface roughness based on S R 0601 is Rmax = 0.2.
~ 200 μm, and the conductor is not
It is characterized in that a body layer is formed . In the wafer prober of the first aspect of the present invention, a conductor layer is formed on the side surface. Therefore, the guard electrode can be protected from noise. The wafer prober of the second present invention (hereinafter
Below, including the ceramic substrate used for the wafer prober.
Is the chuck top conductor layer on the surface of the ceramic substrate.
A wafer prober formed by forming a
A heating element is formed on the chuck substrate and
JI on the side surface adjacent to the surface on which the top conductor layer is formed
The surface roughness based on S R0601 is Rmax = 0.2 to
200 μm and supports the ceramic substrate
It is characterized in that a supporting container is provided. First
In the wafer prober (ceramic substrate) of the present invention, the ceramic
The conductor layer is formed on the side surface of the Mick substrate.
In the wafer prober (ceramic substrate) of the invention, the ceramic
A heating element is formed on the circuit board to support the ceramic board.
It is different in that a supporting container is provided, but other than that
Both are included in the following because they have the same configuration.
As a wafer prober (ceramic substrate) of the present invention
explain. The ceramic substrate of the present invention is used for a wafer prober, and specifically functions as a probing stage (so-called chuck top) for a semiconductor wafer.

In the present invention, the surface roughness of the side surface of the ceramic substrate according to JIS R 0601 is Rmax = 0.
Since the thickness is adjusted to 2 to 200 μm, the side surface of the ceramic substrate and the supporting container are in point contact with each other, and even when the temperature of the ceramic substrate is raised, heat transfer from the above-mentioned side surface of the ceramic substrate to the supporting container. The temperature of the chuck top conductor layer on which the silicon wafer is placed is suppressed and is uniformized.

Further, according to the present invention, since the substrate made of highly rigid ceramic is used, even if the chuck top is pushed by the tester pin of the probe card, the chuck top does not warp, and the thickness of the chuck top is made of metal. It can be made thinner than.

Furthermore, since the thickness of the chuck top can be made thinner than that of metal, even if the ceramic has a thermal conductivity lower than that of metal, the heat capacity is reduced as a result.
The temperature rising / falling characteristics can be improved.

FIG. 1 is a sectional view schematically showing an embodiment of a wafer prober of the present invention, FIG. 2 is a plan view thereof, FIG. 3 is a bottom view thereof, and FIG. 2 is a cross-sectional view taken along the line AA of the wafer prober shown in FIG.

In this wafer prober 101, concentric circular grooves 7 are formed on the surface of a ceramic substrate 3 which is circular in plan view, and a plurality of suction holes 8 for sucking a silicon wafer are formed in a part of the grooves 7. The chuck top conductor layer 2 for connecting to the electrodes of the silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 7. In addition, the JI of the side surface 3a of the ceramic substrate 3
The surface roughness based on S R 0601 is Rmax = 0.2.
It is set to ˜200 μm.

On the other hand, the bottom surface of the ceramic substrate 3 is provided with a concentric heating element 41 in plan view as shown in FIG. 3 for controlling the temperature of the silicon wafer. The external terminal pins 191 are connected and fixed, and a guard electrode 5 and a ground electrode 6 for removing stray capacitors and noise are provided inside the ceramic substrate 3.

The wafer prober of the present invention is shown in FIG.
~ 4 has a configuration as shown. In the following, each member constituting the wafer prober, and
Other embodiments of the wafer prober of the present invention will be sequentially described in detail.

In the present invention, the JI on the side surface of the ceramic substrate is used.
The surface roughness based on S R 0601 is Rmax = 0.2.
It is set to ˜200 μm. The surface roughness is Rmax
= Less than 0.2, the contact area with the supporting container becomes large, so it becomes difficult to suppress heat transfer from the side surface, and the temperature of the outer peripheral portion of the chuck top conductor layer tends to decrease, while When the surface roughness exceeds Rmax = 200 μm, the surface roughness becomes too large, so that the roughened surface has the same effect as the heat radiation fins, and the temperature of the outer peripheral portion of the chuck top conductor layer is likely to decrease. . The surface roughness is preferably Rmax = 0.5 to 50 μm.

The method of roughening treatment is not particularly limited, and examples thereof include sandblasting in which particles made of alumina, SiC, glass, zirconia or the like are blown onto the side surfaces. The adjustment of the surface roughness can be controlled by changing the particle diameter of the particles to be sprayed.

In the present invention, the surface roughness of the side surface is Rmax =
The surface roughness is adjusted to 0.2 to 200 μm, but is adjusted to the above surface roughness in the vicinity of the outer periphery of the surface (hereinafter referred to as the bottom surface) opposite to the surface on which the chuck top conductor layer is formed which may come into contact with the support container. A roughened surface may be formed, or a roughened surface may be formed on the entire bottom surface in order to prevent heat transfer from the support columns of the support container that supports the bottom surface of the ceramic substrate.

The ceramic substrate used in the wafer prober of the present invention is preferably at least one selected from the group consisting of nitride ceramics, carbide ceramics and oxide ceramics.

Examples of the above-mentioned nitride ceramics include metal nitride ceramics such as aluminum nitride, silicon nitride, boron nitride and titanium nitride. Further, as the above-mentioned carbide ceramics, metal carbide ceramics,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples thereof include tantalum carbide and tantalum carbide.

Examples of the oxide ceramics include metal oxide ceramics such as alumina, zirconia, cordierite and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Aluminum nitride is most preferable among the nitride ceramics. This is because the highest thermal conductivity is 180 W / m · K.

100 carbon is contained in the above ceramic.
It is desirable that the content is up to 2000 ppm. This is because the electrode pattern in the ceramic is concealed and high radiant heat can be obtained. The carbon may be one or both of crystalline and non-detectable amorphous detectable by X-ray diffraction.

The thickness of the ceramic substrate of the chuck top in the present invention needs to be thicker than that of the chuck top conductor layer, and specifically 1 to 10 mm is desirable. Further, in the present invention, since the back surface of the silicon wafer is used as an electrode, the chuck top conductor layer is formed on the front surface of the ceramic substrate.

The thickness of the chuck top conductor layer and the side conductor layer is preferably 1 to 20 μm. If it is less than 1 μm, the resistance value becomes too high to function as an electrode.
This is because if the thickness exceeds μm, peeling easily occurs due to the stress of the conductor.

The chuck top conductor layer and the side conductor layer are, for example, at least one metal selected from high melting point metals such as copper, titanium, chromium, nickel, noble metals (gold, silver, platinum, etc.), tungsten, molybdenum, etc. Can be used.

The chap conductor layer and the side conductor layer may be porous bodies made of metal or conductive ceramic.
In the case of a porous body, it is not necessary to form a groove for suction and adsorption as described later, it is possible to prevent the damage of the wafer due to the existence of the groove and also to uniformly suck and adsorb the entire surface. This is because A metal sintered body can be used as such a porous body. When a porous body is used, its thickness is 1 to 20.
It can be used at 0 μm. A solder or a brazing material is used for joining the porous body and the ceramic substrate.

It is desirable that the chuck top conductor layer and the side conductor layer contain nickel. This is because the hardness is high and it is difficult to deform even when the tester pin is pressed. Specific examples of the chuck top conductor layer and the side conductor layer include a nickel sputtering layer formed first, and an electroless nickel plating layer formed on the nickel sputtering layer, titanium, molybdenum, and nickel in this order. Examples thereof include those obtained by sputtering, and then nickel deposited thereon by electroless plating or electrolytic plating.

Alternatively, titanium, molybdenum, and nickel may be sputtered in this order, and copper and nickel may be deposited thereon by electroless plating. This is because the resistance value of the chuck top electrode can be reduced by forming the copper layer.

Further, titanium and copper may be sputtered in this order, and nickel may be deposited thereon by electroless plating or electroless plating. Alternatively, chromium and copper may be sputtered in this order, and nickel may be deposited thereon by electroless plating or electroless plating.

Titanium and chromium can improve the adhesion to ceramics, and molybdenum can improve the adhesion to nickel. The thickness of titanium and chromium is 0.1 to 0.5 μm, the thickness of molybdenum is 0.5 to 7.0 μm, and the thickness of nickel is 0.4 to 2.5.
μm is desirable.

Noble metal layers (gold, silver, platinum, palladium) are formed on the surfaces of the chuck top conductor layer and the side conductor layers.
Are preferably formed. This is because the noble metal layer can prevent contamination due to migration of the base metal. The thickness of the noble metal layer is preferably 0.01 to 15 μm.

In the present invention, it is desirable to provide the ceramic substrate with temperature control means. This is because the continuity test of the silicon wafer can be performed while heating or cooling.

The temperature control means may be a Peltier element in addition to the heating element 41 shown in FIG. When the heating element is provided, a blowing port for a cooling medium such as air may be provided as a cooling means. The heating element may be provided in a plurality of layers. In this case, it is desirable that the patterns of the respective layers are formed so as to complement each other, and the pattern is formed in any of the layers as viewed from the heating surface. For example, a structure in which staggered arrangement is provided.

Examples of the heating element include a sintered body of metal or conductive ceramic, a metal foil, a metal wire and the like. The metal sintered body is preferably at least one selected from tungsten and molybdenum. This is because these metals are relatively difficult to oxidize and have a resistance value sufficient to generate heat.

As the conductive ceramic, at least one selected from carbides of tungsten and molybdenum is used.
Seeds can be used. Further, when the heating element is formed on the outside of the ceramic substrate, it is desirable to use a noble metal (gold, silver, palladium, platinum) or nickel as the metal sintered body. Specifically, silver, silver-palladium, or the like can be used. The metal particles used in the metal sintered body may be spherical, flaky, or a mixture of spherical and flaky.

A metal oxide may be added to the metal sintered body. The reason why the above metal oxide is used is to bring the nitride ceramic or the carbide ceramic into close contact with the metal particles. It is not clear why the metal oxide improves the adhesion between the nitride ceramic or the carbide ceramic and the metal particle, but a slight oxide film is formed on the surface of the metal particle and the surface of the nitride ceramic or the carbide ceramic. Therefore, it is considered that the oxide films are sintered and integrated with each other through the metal oxide, and the metal particles and the nitride ceramic or the carbide ceramic adhere to each other.

Examples of the above metal oxide include, for example, oxidation.
Lead, zinc oxide, silica, boron oxide (B ₂ O₃ ), Al
At least one selected from Mina, Yttria, and Titania
Seeds are preferred. These oxides increase the resistance value of the heating element.
Metal particles and nitride ceramic or
This is because the adhesion with the carbide ceramic can be improved.

The above-mentioned metal oxide has a metal content of 0.
It is desirable to be 1% by weight or more and less than 10% by weight. This is because the resistance value does not become too large and the adhesion between the metal particles and the nitride ceramic or the carbide ceramic can be improved.

The proportion of lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is such that when the total amount of metal oxides is 100 parts by weight, lead oxide is 1 to 1. 10 parts by weight, 1 to 30 parts by weight of silica, 5 to 50 parts by weight of boron oxide, 20 to 7 of zinc oxide.
0 parts by weight, alumina 1 to 10 parts by weight, yttria 1
.About.50 parts by weight, and titania is preferably 1 to 50 parts by weight. However, it is desirable that the total amount of these components be adjusted within a range not exceeding 100 parts by weight. This is because these ranges are ranges in which the adhesion with the nitride ceramic can be improved.

When the heating element is provided on the surface of the ceramic substrate, it is desirable that the surface of the heating element is covered with the metal layer 410 (see FIG. 11 (e)). The heating element is a sintered body of metal particles, and if it is exposed, it is easily oxidized, and this oxidation changes the resistance value. Therefore, by coating the surface with a metal layer, oxidation can be prevented.

The thickness of the metal layer is preferably 0.1 to 10 μm. This is because the range can prevent oxidation of the heating element without changing the resistance value of the heating element. The metal used for coating may be a non-oxidizing metal. Specifically, at least one selected from gold, silver, palladium, platinum and nickel is preferable. Of these, nickel is more preferable. This is because the heating element needs a terminal for connecting to a power source, and this terminal is attached to the heating element via solder, but nickel prevents heat diffusion of the solder. A terminal pin made by Kovar can be used as the connection terminal. In addition, when the heating element is formed inside the heater plate, the surface of the heating element is not oxidized, and thus coating is unnecessary. When the heating element is formed inside the heater plate, a part of the surface of the heating element may be exposed.

The metal foil used as the heating element is preferably a nickel foil or a stainless foil formed by patterning by etching or the like to form the heating element. The patterned metal foil may be laminated with a resin film or the like. Examples of the metal wire include a tungsten wire and a molybdenum wire.

When a Peltier element is used as the temperature control means, heat is generated by changing the direction of current flow.
This is advantageous because both cooling can be performed. As shown in FIG. 7, the Peltier element is a p-type or n-type thermoelectric element 440.
Are connected in series and are joined to a ceramic plate 441 or the like. As a Peltier element,
For example, a silicon / germanium-based material, a bismuth / antimony-based material, a lead / tellurium-based material, or the like can be used.

In the present invention, it is desirable that at least one conductive layer is formed between the temperature control means and the chuck top conductive layer. The guard electrode 5 and the ground electrode 6 in FIG. 1 correspond to the conductor layer. Guard electrode 5
Is an electrode for canceling the stray capacitor interposed in the measurement circuit, and is supplied with the ground potential of the measurement circuit (that is, the chuck top conductor layer 2 in FIG. 1).
The ground electrode 6 is provided to cancel noise from the temperature control means. The thickness of these electrodes is preferably 1 to 20 μm. If it is too thin, the resistance value will be high, and if it is too thick, the ceramic substrate will warp and the thermal shock resistance will decrease.

These guard electrode 5 and ground electrode 6
Are preferably provided in a grid pattern as shown in FIG. That is, a large number of rectangular conductor layer non-forming portions 52 are arranged inside the circular conductor layer 51. This shape is used to improve the adhesion between the ceramics above and below the conductor layer. It is desirable that the surface of the wafer prober of the present invention on which the chuck top conductor layer is formed is provided with the groove 7 and the air suction hole 8 as shown in FIG. A plurality of suction holes 8 are provided to achieve uniform suction. This is because the silicon wafer W can be placed and the air can be sucked from the suction holes 8 to suck the silicon wafer W.

As the wafer prober in the present invention,
For example, as shown in FIG. 1, a heating element 41 is provided on the bottom surface of the ceramic substrate 3, and a layer of the guard electrode 5 and a layer of the ground electrode 6 are provided between the heating element 41 and the chuck top conductor layer 2, respectively. The wafer prober 101 having the above structure is provided with the flat heating element 42 inside the ceramic substrate 3 as shown in FIG. 5, and the guard electrode 5 and the ground electrode 6 are provided between the heating element 42 and the chuck top conductor layer 2. A wafer prober 201 having a structure in which a metal wire 43 as a heating element is embedded inside the ceramic substrate 3 as shown in FIG. 6, and a guard electrode 5 is formed between the metal wire 43 and the chuck top conductor layer 2. A wafer prober 301 having a structure provided with a ground electrode 6, and a Peltier device 44 as shown in FIG.
The Peltier element 44 (consisting of the thermoelectric element 440 and the ceramic substrate 441) is formed on the outside of the ceramic substrate 3.
Wafer prober 401 having a structure in which the guard electrode 5 and the ground electrode 6 are provided between the chuck top conductor layer 2 and the chuck top conductor layer 2.
Etc. Each wafer prober always has a groove 7 and a suction hole 8.

In the present invention, heating elements 42 and 43 are formed inside the ceramic substrate 3 as shown in FIGS. 1 to 7 (FIGS. 5 to 6), and the guard electrode 5 and the ground electrode 6 are formed inside the ceramic substrate 3. (FIGS. 1 to 7) are formed, and therefore a connecting portion (through hole) for connecting these to external terminals 1
6, 17, 18 are required. Through holes 16, 1
7, 18 are formed by filling a refractory metal such as tungsten paste or molybdenum paste, or a conductive ceramic such as tungsten carbide or molybdenum carbide.

Further, the connecting portions (through holes) 16, 1
The diameter of 7, 18 is preferably 0.1 to 10 mm. This is because it is possible to prevent cracks and distortions while preventing disconnection. External terminal pins are connected using the through holes as connection pads (see FIG. 11 (g)).

Connection is made with solder or brazing material. As a brazing material, silver brazing, palladium brazing, aluminum brazing,
Use gold wax. Au-Ni alloy is preferable for gold brazing. This is because the Au-Ni alloy has excellent adhesion to tungsten.

The Au / Ni ratio is [81.5 to 82.
5 (wt%)] / [18.5 to 17.5 (wt%)] is desirable. The thickness of the Au—Ni layer is preferably 0.1 to 50 μm. This is because the range is sufficient to secure the connection.
Moreover, at a high vacuum of 10 ⁻⁶ to 10 ⁻⁵ Pa, 500 ° C. to 100 ° C.
When used at a high temperature of 0 ° C., the Au—Cu alloy deteriorates, but the Au—Ni alloy is advantageous because it does not deteriorate. The total amount of impurity elements in the Au-Ni alloy is 1
When the amount is 00 parts by weight, it is preferably less than 1 part by weight.

In the present invention, a thermocouple can be embedded in the ceramic substrate if necessary. This is because the temperature of the heating element can be measured with a thermocouple and the temperature can be controlled by changing the voltage and current amount based on the data.
The size of the joining portion of the metal wires of the thermocouple is equal to or larger than the wire diameter of each metal wire, and 0.
5 mm or less is preferable. With such a configuration, the heat capacity of the joint portion is reduced, and the temperature is converted into a current value accurately and quickly. Therefore, the temperature controllability is improved and the temperature distribution on the heating surface of the wafer is reduced. As the thermocouple, for example, JIS-C-160
2 (1980), K type, R type, B type
Type, S type, E type, J type, and T type thermocouples.

FIG. 8 is a sectional view schematically showing a support container 11 for installing the wafer prober of the present invention having the above-mentioned structure. A coolant outlet 12 is formed in the support container 11, and the coolant is blown from the coolant inlet 14. Further, air is sucked from the suction port 13 and the silicon wafer (not shown) placed on the wafer prober is sucked into the groove 7 through the suction hole 8.

FIG. 9A is a horizontal sectional view schematically showing another example of the support container, and FIG. 9B is a sectional view taken along line BB in FIG. 9A. As shown in FIG. 9, in this support container, a large number of support pillars 1 are provided so that the wafer prober does not warp by the tester pins of the probe card.
5 are provided. The support container is an aluminum alloy,
Stainless steel or the like can be used.

In the wafer prober of the present invention, the side JI
The surface roughness based on S R 0601 is Rmax = 0.2 to
Since it is adjusted to 200 μm, the supporting containers 11, 21
The temperature of the wafer prober 101 placed on
When heated by the heating element, heat transfer to the support container 11 is suppressed, and the temperature of the chuck top conductor layer becomes uniform.

Further, in the support container 21 shown in FIG. 9, since the support columns 15 are formed and heat transfer from the support columns 15 is also considered, the surface roughness based on JIS R 0601 of the bottom surface is Rmax = 0. The heat transfer via the support columns 15 can be suppressed by adjusting the thickness to 2 to 200 μm.

Next, an example of the method for manufacturing the wafer prober of the present invention will be described with reference to the sectional views shown in FIGS. (1) First, a green sheet 30 is obtained by mixing ceramic powder such as oxide ceramic, nitride ceramic, or carbide ceramic with a binder and a solvent. As the above-mentioned ceramic powder, for example, aluminum nitride,
Silicon carbide or the like can be used, and if necessary,
A sintering aid such as yttria may be added.

The binder is preferably at least one selected from acrylic binders, ethyl cellulose, butyl cellosolve and polyvinyl alcohol.
Further, the solvent is preferably at least one selected from α-terpineol and glycol. The paste obtained by mixing these is formed into a sheet by a doctor blade method to produce a green sheet 30.

If necessary, the green sheet 30 may be provided with through holes for inserting the support pins of the silicon wafer and recesses for embedding the thermocouple. Through holes and recesses
It can be formed by punching or the like. The thickness of the green sheet 30 is preferably about 0.1 to 5 mm.

Next, the green sheet 30 is provided with a guard electrode,
Print the ground electrode. Printed on the green sheet 30
Is performed so as to obtain a desired aspect ratio in consideration of the contraction rate of the guard electrode printed matter 50 and the ground electrode printed matter 60. The printed body is formed by printing a conductive paste containing conductive ceramics, metal particles and the like.

Carbide of tungsten or molybdenum is most suitable as the conductive ceramic particles contained in these conductive pastes. This is because it is difficult to oxidize and the thermal conductivity does not easily decrease. Further, as the metal particles, for example, tungsten, molybdenum, platinum, nickel or the like can be used.

The average particle diameter of the conductive ceramic particles and metal particles is preferably 0.1 to 5 μm. This is because it is difficult to print the paste when these particles are too large or too small. As such a paste, 85 to 97 parts by weight of metal particles or conductive ceramic particles, at least one binder selected from acrylic, ethyl cellulose, butyl cellosolve and polyvinyl alcohol 1.5
The paste prepared by mixing 10 to 10 parts by weight, 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol, glycol, ethyl alcohol and butanol is most suitable. Further, the holes formed by punching or the like are filled with a conductive paste, and the through-hole printed body 16 is formed.
You get 0,170.

Next, as shown in FIG. 10A, the green sheet 3 having the printed bodies 50, 60, 160 and 170.
0 and the green sheet 30 having no printed body are laminated. Green sheet 3 that does not have a printed body on the heating element formation side
The reason why 0 is stacked is to prevent the end face of the through hole from being exposed and being oxidized during firing for forming the heating element. If the firing for forming the heating element is performed with the end face of the through hole exposed, it is necessary to sputter a metal that is difficult to oxidize such as nickel, and more preferably, even if it is covered with Au—Ni gold brazing. Good.

(2) Next, as shown in FIG.
The laminated body is heated and pressed to sinter the green sheet and the conductive paste. The heating temperature is 1000-2
The pressure and pressure are preferably 100 to 200 kg / cm ² , and the heating and pressurization are performed in an inert gas atmosphere. As the inert gas, argon, nitrogen or the like can be used. Through holes 16 and 1 in this process
7, the guard electrode 5, and the ground electrode 6 are formed.

(3) Next, as shown in FIG.
Grooves 7 are provided on the surface of the sintered body, and the side surface is roughened so that the surface roughness according to JIS R 0601 is Rma.
A roughened surface of x = 0.2 to 200 μm is formed. The formation of the groove 7 and the side surface roughening treatment are performed by sandblasting or the like. (4) Next, as shown in FIG. 10 (d), a conductive paste is printed on the bottom surface of the sintered body and fired to produce the heating element 41. The formed heating element 41 firmly adheres to the surface of the ceramic substrate.

(5) Next, as shown in FIG.
After sputtering titanium, molybdenum, nickel or the like on the wafer mounting surface (groove forming surface), electroless nickel plating or the like is performed to provide the chuck top conductor layer 2. At the same time, a protective layer 410 is formed on the surface of the heating element 41 by electroless nickel plating or the like.

(6) Next, as shown in FIG.
A suction hole 8 penetrating from the groove 7 to the back surface and a blind hole 180 for connecting an external terminal are provided. It is preferable that at least a part of the inner wall of the blind hole 180 is made conductive, and the made conductive inner wall is connected to the guard electrode 5, the ground electrode 6, and the like.

(7) Finally, as shown in FIG. 11 (g), after solder paste is printed on the mounting portion on the surface of the heating element 41, the external terminal pins 191 are mounted and heated for reflow. The heating temperature is preferably 200 to 500 ° C.

External terminals 19 and 190 are also provided in the bag hole 180 via a brazing filler metal. Further, if necessary, a bottomed hole may be provided and a thermocouple may be embedded inside the hole. As the solder, an alloy such as silver-lead, lead-tin, bismuth-tin can be used. The thickness of the solder layer is
0.1 to 50 μm is desirable. This is because the range is sufficient to secure the connection with solder.

In the above description, the wafer prober 101
Although the wafer prober 201 (see FIG. 5) is manufactured, the heating element may be printed on the green sheet. Further, when the wafer prober 301 (see FIG. 6) is manufactured, a metal plate as a guard electrode and a ground electrode in the ceramic powder, and a metal wire as a heating element may be embedded and sintered. Further, when the wafer prober 401 (see FIG. 7) is manufactured, the Peltier element may be joined via the sprayed metal layer.

[0072]

The present invention will be described in more detail below. (Example 1) Manufacture of wafer prober 101 (see FIG. 1) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttria (average particle size 0.
4 μm) 4 parts by weight, acrylic binder 11.5 parts by weight,
Using a composition prepared by mixing 0.5 part by weight of a dispersant and 53 parts by weight of an alcohol consisting of 1-butanol and ethanol, a composition having a thickness of 0.4 was formed by a doctor blade method.
A 7 mm green sheet was obtained.

(2) This green sheet was dried at 80 ° C. for 5 hours, and then punched to form through holes for through holes for connecting the heating element and the external terminal pins. (3) 100 parts by weight of tungsten carbide particles having an average particle size of 1 μm, 3.0 parts by weight of an acrylic binder, α-
3.5 parts by weight of a terpineol solvent and 0.3 part by weight of a dispersant were mixed to prepare a conductive paste A.

100 parts by weight of tungsten particles having an average particle size of 3 μm, 1.9 parts by weight of an acrylic binder, α
A conductive paste B was prepared by mixing 3.7 parts by weight of the terpineol solvent and 0.2 parts by weight of the dispersant.

Next, the grid-shaped guard electrode print body 50 and the ground electrode print body 60 were printed on the green sheet by screen printing using the conductive paste A. Further, the conductive paste B was filled in the through holes for through holes for connecting to the terminal pins.

Further, 50 printed green sheets and 50 unprinted green sheets are laminated to form 1
A laminated body was produced by integrating at 30 ° C. and a pressure of 80 kg / cm ² (see FIG. 10A).

(4) Next, this laminated body was subjected to 6 in nitrogen gas.
Degreasing at 00 ℃ for 5 hours, 1890 ℃, pressure 150kg /
Hot pressing was performed at cm ² for 3 hours to obtain an aluminum nitride plate-shaped body having a thickness of 4 mm. The obtained plate-shaped body has a diameter of 230
A circular plate of mm was cut out to obtain a ceramic plate-like body (see FIG. 10B). The size of the through holes 16 and 17 was 3.0 mm in diameter and 3.0 mm in depth. The thickness of the guard electrode 5 and the ground electrode 6 is 10 μm,
The formation position of the guard electrode 5 is 1.2 m from the wafer mounting surface.
The formation position of m and the ground electrode 6 was 3.0 mm from the wafer mounting surface.

(5) A mask is placed on the surface of the plate-shaped body obtained in the above (4) on which the chuck top conductor layer is to be formed, and a recess for thermocouple (not shown) is formed on the surface by blasting with SiC or the like. ) And a groove 7 for adsorbing a silicon wafer (width 0.5 m
m, and a depth of 0.5 mm) (see FIG. 10C).
Next, the side surface of the plate-like body having the above-mentioned grooves etc.
m sandblasting of alumina particles and J
According to IS B 0601, a roughened surface with Rmax = 7 μm was formed.

(6) Further, the heating element 41 is printed on the surface facing the wafer mounting surface. The printing used conductive paste. The conductive paste is Solbest PS manufactured by Tokuriki Kagaku Kenkyusho, which is used for forming through holes in printed wiring boards.
603D was used. This conductive paste is a silver / lead paste, including lead oxide, zinc oxide, silica, boron oxide,
Metal oxide made of alumina (the weight ratio of each is
5/55/10/25/5) in an amount of 7.5 parts by weight based on 100 parts by weight of silver. Further, the silver had a scaly shape with an average particle size of 4.5 μm.

(7) The heater plate on which the conductive paste was printed was heated and baked at 780 ° C. to sinter the silver and lead contained in the conductive paste and to bake it on the ceramic substrate 3. Further, the heater plate is dipped in an electroless nickel plating bath made of an aqueous solution containing 30 g / l of nickel sulfate, 30 g / l of boric acid, 30 g / l of ammonium chloride and 60 g / l of Rochelle salt, and the surface of the silver sintered body 41 is A nickel layer 410 having a thickness of 1 μm and a boron content of 1 wt% or less was deposited. Then, the heater plate was annealed at 120 ° C. for 3 hours. The heating element made of a silver sintered body has a thickness of 5 μm, a width of 2.4 mm, and an area resistivity of 7.7 m.
It was Ω / □ (Fig. 10 (d)).

(8) A titanium layer, a molybdenum layer and a nickel layer were sequentially formed on the surface where the groove 7 was formed by a sputtering method. As an apparatus for sputtering, SV-4540 manufactured by Nippon Vacuum Technology Co., Ltd. was used. The conditions of sputtering were atmospheric pressure of 0.6 Pa, temperature of 100 ° C., and electric power of 200 W, and the sputtering time was adjusted within the range of 30 seconds to 1 minute by each metal. The thickness of the obtained film was 0. 0 for the titanium layer from the image of the fluorescent X-ray analyzer.
3 μm, the molybdenum layer was 2 μm, and the nickel layer was 1 μm.

(9) Nickel sulfate 30 g / l, boric acid 3
An electroless nickel plating bath consisting of an aqueous solution containing 0 g / l, ammonium chloride 30 g / l and Rochelle salt 60 g / l, and nickel sulfate 250 to 350 g / l,
Nickel chloride 40-70 g / l, boric acid 30-50 g /
The ceramic plate obtained in (8) above was dipped in an electrolytic nickel plating bath containing 1 and adjusted to pH 2.4 to 4.5 with sulfuric acid, and the thickness was formed on the surface of the metal layer formed by sputtering. A nickel layer having a thickness of 7 μm and a boron content of 1% by weight or less was deposited and annealed at 120 ° C. for 3 hours. The surface of the heating element does not carry an electric current and is not covered with electrolytic nickel plating.

Furthermore, 2 g of potassium gold cyanide on the surface /
1, ammonium chloride 75 g / l, sodium citrate 50 g / l, and sodium hypophosphite 10 g / l in an electroless gold plating solution at 93 ° C. for 1 minute.
A gold plating layer having a thickness of 1 μm was formed on the nickel plating layer 15 (see FIG. 11 (e)).

(10) An air suction hole 8 extending from the groove 7 to the rear surface is formed by drilling, and the through hole 1 is further formed.
A bag hole 180 is provided to expose 6 and 17 (see FIG. 1).
0 (f)). Ni-Au alloy (A
u 81.5% by weight, Ni 18.4% by weight, impurities 0.1
(% By weight) was used to heat and reflow the solder at 970 ° C. to connect the external terminal pins 19 and 190 made of Kovar (see FIG. 11 (g)). In addition, external terminal pins 191 made of Kovar were formed on the heating element via solder (tin 9 / lead 1).

(11) Next, a plurality of thermocouples for temperature control were embedded in the recess to obtain the wafer prober heater 101. (12) The wafer prober 101 was placed on the stainless steel support container 11 having the cross-sectional shape shown in FIG.

(Embodiment 2) Wafer prober 201 (see FIG. 5)
(1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttria (average particle size 0.
4 μm) 4 parts by weight, acrylic binder 11.5 parts by weight,
A composition prepared by mixing 0.5 part by weight of a dispersant and 53 parts by weight of an alcohol composed of 1-butanol and ethanol,
Molding was performed by the doctor blade method to obtain a green sheet having a thickness of 0.47 mm.

(2) This green sheet was dried at 80 ° C. for 5 hours and then punched to form through holes for through holes for connecting the heating element and the external terminal pins. (3) 100 parts by weight of tungsten carbide particles having an average particle size of 1 μm, 3.0 parts by weight of an acrylic binder, α-
3.5 parts by weight of a terpineol solvent and 0.3 part by weight of a dispersant were mixed to prepare a conductive paste A.

Also, 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, α
A conductive paste B was prepared by mixing 3.7 parts by weight of the terpineol solvent and 0.2 parts by weight of the dispersant.

Next, a grid-shaped printed material for guard electrode and printed material for ground electrode were printed on the green sheet by screen printing using the conductive paste A. further,
The heating element was printed as a concentric pattern as shown in FIG.

Further, the conductive paste B was filled in the through holes for through holes for connecting to the terminal pins. Furthermore, 50 sheets of green sheets that have been printed and those that have not been printed are stacked at 130 ° C and 80 kg.
^They were integrated at a pressure of / cm ² to produce a laminate.

(4) Next, this laminated body is subjected to 6 in nitrogen gas.
Degreasing at 00 ℃ for 5 hours, 1890 ℃, pressure 150kg /
It was hot-pressed at cm ² for 3 hours to obtain an aluminum nitride plate-shaped body having a thickness of 3 mm. This was cut into a circular shape having a diameter of 230 mm to obtain a ceramic plate-shaped body. The size of the through hole was 2.0 mm in diameter and 3.0 mm in depth.
The thickness of the guard electrode 5 and the ground electrode 6 is 6 μm,
The formation position of the guard electrode 5 is 0.7 m from the wafer mounting surface.
m, the formation position of the ground electrode 6 was 1.4 mm from the wafer mounting surface, and the formation position of the heating element was 2.8 mm from the wafer mounting surface.

(5) A mask is placed on the surface of the plate-shaped chuck top conductor layer obtained in (4) above, and a recess for thermocouple (not shown) is formed on the surface by blasting with SiC or the like. And a groove 7 for adsorbing a silicon wafer (width: 0.5 m
m, depth 0.5 mm). Next, the side surface and the bottom surface of the plate-like body in which the grooves and the like were formed were treated by sandblasting alumina particles having an average particle diameter of 5 μm, and a roughened surface of Rmax = 7 μm was formed on the side surface and the bottom surface according to JIS B0601. .

(6) Titanium, molybdenum and nickel layers were formed on the surface where the groove 7 was formed by sputtering. As an apparatus for sputtering, SV-4540 manufactured by Nippon Vacuum Technology Co., Ltd. was used. The sputtering conditions were atmospheric pressure of 0.6 Pa, temperature of 100 ° C., and electric power of 200 W, and the sputtering time was between 30 seconds and 1 minute, and was adjusted for each metal. In the obtained film, titanium had a thickness of 0.5 μm, molybdenum had a thickness of 4 μm, and nickel had a thickness of 1.5 μm according to the image of the fluorescent X-ray analyzer.

(7) Nickel sulfate 30 g / l, boric acid 3
The surface of the metal layer formed by sputtering by immersing the ceramic plate 3 obtained in (6) in an electroless nickel plating bath consisting of an aqueous solution containing 0 g / l, ammonium chloride 30 g / l, and Rochelle salt 60 g / l Thickness 7μ
A nickel layer having a m and boron content of 1 wt% or less was deposited and annealed at 120 ° C. for 3 hours.

Furthermore, potassium gold cyanide 2 g /
l, ammonium chloride 75 g / l, sodium citrate 50 g / l, sodium hypophosphite 10 g / l, immersed in electroless gold plating solution at 93 ° C. for 1 minute to give a thickness of 1 μm on the nickel plating layer. Of gold was formed.

(8) Air suction hole 8 that escapes from groove 7 to the back surface
Is formed by drilling, and the through hole 16 is
A blind hole 180 for exposing 17 is provided. Ni-Au alloy (Au 81.5% by weight, Ni1
A gold braze composed of 8.4% by weight and 0.1% by weight of impurities) was used to heat and reflow at 970 ° C. to connect external terminal pins 19 and 190 made of Kovar. External terminals 19, 19
0 may be made of W.

(9) A plurality of thermocouples for temperature control were embedded in the recess to obtain a wafer prober heater 201. (10) The wafer prober 201 was placed on the stainless support container 21 having the cross-sectional shape shown in FIG.

Example 3 Production of Wafer Prober 301 (See FIG. 6) (1) A 10 μm thick tungsten foil was punched to form a grid-like electrode. Two grid-shaped electrodes (one serving as the guard electrode 5 and one serving as the ground electrode 6)
And 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corp., average particle size 1.1 μm) and 4 parts by weight of yttria (average particle size 0.4 μm) in a molding die at 1890 ° C. in nitrogen gas, Pressure 150kg / c
It was hot pressed at m ² for 3 hours to obtain an aluminum nitride plate-like body having a thickness of 3 mm. This was cut into a circular shape having a diameter of 230 mm to obtain a plate-shaped body. (2) For this plate-shaped body, (5) to (10) of Example 2
Process, the side surface of the plate-like body is treated with sandblasting of alumina particles having an average particle size of 2 μm, and the side surface is JIS B
At 0601, a wafer prober 301 having a roughened surface of Rmax = 7 μm was obtained, and the wafer prober 301 was placed on the support container 11 shown in FIG.

Example 4 Manufacturing of Wafer Prober 401 (See FIG. 7) (1) to (5) and (8) to (10) of Example 1
After that, the surface opposite to the wafer mounting surface is further sprayed with nickel, and then a lead / tellurium Peltier element is bonded, and the side surface is JIS B 0601 and Rmax =
A wafer prober 401 having a roughened surface of 7 μm was obtained, and the wafer prober 401 was placed on the support container 11 shown in FIG. 8 in the same manner as in Example 1.

Example 5 Production of Wafer Prober Using Silicon Carbide as Ceramic Substrate A wafer prober was produced in the same manner as in Example 3 except for the matters or conditions described below. That is, 100 parts by weight of silicon carbide powder having an average particle diameter of 1.0 μm was used, and two grid-shaped electrodes (each guard electrode 5,
(Which becomes the ground electrode 6), and 10% by weight of tetraethoxysilane, 0.5% by weight of hydrochloric acid and 8% of water on the surface.
A tungsten wire coated with a sol solution of 9.5 wt% was used and fired at a temperature of 1900 ° C. The sol solution becomes SiO ₂ by firing and forms an insulating layer. Next, JIS B 0601 was applied to the side surface obtained in Example 5.
Then, the wafer prober 401 on which the roughened surface of Rmax = 7 μm was formed was placed on the support container 11 shown in FIG.

Example 6 Production of Wafer Prober Using Alumina as Ceramic Substrate A wafer prober was produced in the same manner as in Example 1 except for the steps or conditions described below. 100 parts by weight of alumina powder (made by Tokuyama, average particle size 1.5 μm),
A composition obtained by mixing 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of an alcohol composed of 1-butanol and ethanol was molded by using a doctor blade method to give a composition having a thickness of 0.5 mm. I got a green sheet. The firing temperature was 1000 ° C. Next, according to JIS B 0601, Rmax was applied to the side surface obtained in Example 6.
A wafer prober having a roughened surface of 7 μm was placed on the support container 11 shown in FIG.

(Example 7) Similar to Example 1, except that the side surface was also subjected to sputtering and nickel plating to form a side surface conductor layer.

Comparative Example 1 A wafer prober was manufactured in the same manner as in Example 1 except that the side surface of the heater plate was not sandblasted after the heater plate was manufactured. The surface roughness based on JIS B 0601 on the side surface of this wafer prober is
Rmax was 0.1 μm.

(Comparative Example 2) After manufacturing a heater plate, both surfaces were treated by sandblasting of alumina particles having an average particle diameter of 250 μm, and the surface was subjected to Rmax according to JIS B 0601.
A wafer prober was manufactured in the same manner as in Example 1 except that irregularities of 210 μm were formed.

(Comparative Example 3) The side surface of the ceramic substrate of Comparative Example 1 was subjected to sputtering and nickel plating to form a side surface conductor layer.

Comparative Example 4 The side surface of the ceramic substrate of Comparative Example 2 was subjected to sputtering and nickel plating to form a side surface conductor layer.

[0107]Evaluation methods Examples 1 to 7 and Comparative Examples 1 to 4 placed on a support container
The wafer prober manufactured in
The center of the chuck top conductor layer is heated by heating the haplobar.
Temperature of the chuck top conductor layer
The difference ΔT between the maximum temperature and the minimum temperature of was measured. as a result
Are shown in Table 1 below. In addition, Example 7, Comparative Example 3 and
And the wafer prober of Comparative Example 4, the side conductor layer
Strength was measured.

[0108]

[Table 1]

As shown in Table 1 above, in the wafer probers according to Examples 1 to 6, the difference Δ between the maximum temperature and the minimum temperature was Δ.
While T is as small as 1 to 2 ° C., in the wafer probers according to Comparative Examples 1 and 2, the difference ΔT between the maximum temperature and the minimum temperature is ΔT.
Of 5 to 7 ° C., the temperature difference ΔT is considerably large.
It is considered that this is because the temperature of the peripheral portion of the ceramic substrate is lowered due to heat transfer from the ceramic substrate to the support container.

In the prober of Example 7, the side conductor had a pull strength of 1 kgf / mm ² (9.8 MPa) and no peeling. On the other hand, in Comparative Examples 3 and 4, the pull strength of the side conductor is 0.1 kgf / mm ² (0.98MP
There was poor adhesion with a). It is presumed that in Comparative Example 3, the anchor effect of the roughened surface was insufficient, and in Comparative Example 4, the roughened surface was too large to cause sputtering and plating.

[0111]

As described above, the wafer prober of the first invention of the present application and the wafer prober of the second invention of the present invention are
Surface roughness based on JIS R 0601 of the side surface is Rmax
= 0.2 to 200 μm, the contact with the support container is in a point contact state even when the ceramic substrate is placed on the support container, heat transfer to the support container is suppressed, and the ceramic substrate Even when the temperature is raised, the temperature of the chuck top conductor layer can be kept uniform. In addition, the side surface conductor can be favorably formed.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing an example of a wafer prober of the present invention.

FIG. 2 is a plan view of the wafer prober shown in FIG.

FIG. 3 is a bottom view of the wafer prober shown in FIG.

4 is a cross-sectional view of the wafer prober shown in FIG. 1 taken along the line AA.

FIG. 5 is a sectional view schematically showing an example of the wafer prober of the present invention.

FIG. 6 is a sectional view schematically showing an example of the wafer prober of the present invention.

FIG. 7 is a sectional view schematically showing an example of the wafer prober of the present invention.

FIG. 8 is a sectional view schematically showing a case where the wafer prober of the present invention is combined with a support container.

9A is a vertical sectional view schematically showing a case where the wafer prober of the present invention is combined with another supporting container, and FIG. 9B is a sectional view taken along line BB thereof.

10 (a) to 10 (d) are cross-sectional views schematically showing a part of the manufacturing process of the wafer prober of the present invention.

11 (e) to (g) are cross-sectional views schematically showing a part of the manufacturing process of the wafer prober of the present invention.

FIG. 12 is a sectional view schematically showing a state in which a continuity test is performed using the wafer prober of the present invention.

[Explanation of symbols]

101, 201, 301, 401 Wafer prober 2 Chap top conductor layer 3 Ceramic substrate 5 Guard electrode 6 ground electrode 7 groove 8 suction port 10 Insulation 11 Support container 12 Refrigerant outlet 13 Suction port 14 Refrigerant inlet 15 Support pillars 16, 17, 18 through holes 180 bag holes 19, 190, 191 External terminal pin 41, 42 heating element 410 Protective layer 43 metal wire 44 Peltier element 440 thermoelectric element 441 ceramic substrate 51 conductor layer 52 Conductor layer non-formation part

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-7-307377 (JP, A) Actual development Sho 59-74731 (JP, U) Actual development Sho 62-180944 (JP, U) (58) Field (Int.Cl. ⁷ , DB name) H01L 21/66 H01L 21/68

Claims (14)

(57) [Claims] 1. A wafer prober in which a chuck top conductor layer is formed on a surface of a ceramic substrate, wherein a surface roughness according to JIS R 0601 of a side surface adjacent to a surface on which the chuck top conductor layer is formed is Rmax
= 0.2～200Myuemu der is, the side of the ceramic substrate
A wafer prober having a surface on which a conductor layer is formed . 2. The ceramic substrate is a nitride ceramic
The ceramic material according to claim 1, which is made of a ceramic or a carbide ceramic.
Eha Proba. 3. The chuck top conductor layer is porous.
The wafer prober according to claim 1. 4. A guard electrode is provided on the ceramic substrate.
The wafer prober according to claim 1, which is formed. 5. A ceramic substrate having a chuck top conductor layer formed on the surface thereof, wherein a side surface adjacent to the surface having the chuck top conductor layer has a surface roughness according to JIS R 0601 of Rmax.
= 0.2～200Myuemu der is, on its side surface conductor layers form
Ceramic substrate used in wafer prober, characterized in that made be made by. 6. The ceramic substrate is a nitride ceramic
C. or a carbide ceramic.
Ceramic substrate used for Eha Prober. 7. The chuck top conductor layer is porous.
A cell used in the wafer prober according to claim 5.
Mick substrate. 8. A guard electrode is provided on the ceramic substrate.
The wafer prober according to claim 5, wherein the wafer prober is formed.
Ceramic substrate. 9. A chuck top on the surface of a ceramic substrate.
A wafer prober having a conductor layer formed thereon, wherein a heating element is formed on the ceramic substrate.
On the side adjacent to the surface on which the chuck top conductor layer is formed
The surface roughness based on JIS R 0601 of the surface is Rmax.
= 0.2 to 200 μm, and a support container supporting the ceramic substrate is provided.
A wafer prober characterized by being provided. 10. The ceramic substrate is a nitride ceramic.
A ceramic or carbide ceramic according to claim 9.
Wafer prober. 11. The chuck top conductor layer is porous.
The wafer prober according to claim 9, wherein 12. A chuck top conductor layer is formed on the surface of the chuck top conductor layer.
A ceramic substrate formed of a heating element and a side adjacent to the surface on which the chuck top conductor layer is formed.
The surface roughness based on JIS R 0601 of the surface is Rmax.
= 0.2 to 200 μm and is supported by a supporting container.
Ceramic substrate used for wafer prober. 13. The ceramic substrate is a nitride ceramic.
13. A ceramic or carbide ceramic according to claim 12.
Ceramic substrate used in the wafer prober. 14. The chuck top conductor layer is porous.
Used in the wafer prober according to claim 12.
Ceramic substrate.