JP2001196425A - Wafer prober and ceramic board used for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer prober in which a ceramic board is hardly separated from a guard electrode and/or a ground electrode due to the difference in thermal expansion between a surrounding ceramic and the guard electrode and/or the ground electrode. SOLUTION: A chuck top conductor layer is formed on the surface of a ceramic board, a guard electrode and/or a ground electrode is provided on the ceramic board for the formation of a wafer prober, and at least the guard electrode and/or the ground electrode is, at least, partially formed of conductive sintered material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[Detailed description of the invention]

[0002]

2. Description of the Related Art Semiconductors are extremely important products required in various industries.
The silicon wafer is manufactured by slicing a silicon single crystal to a predetermined thickness to produce a silicon wafer, and then forming various circuits and the like on the silicon wafer. In the semiconductor chip manufacturing process, a probing process is required to measure and check whether or not the electrical characteristics operate as designed at the stage of the silicon wafer. For this purpose, a so-called prober is used.

As such a wafer prober, for example,
For example, Japanese Patent No. 2587289, Japanese Patent Publication No. 3-4094
No. 7, JP-A-11-31724, etc.
Chuck top made of metal such as minium alloy or stainless steel
A wafer prober having a probe is disclosed (see FIG. 14).
See). In such a wafer prober, for example, FIG.
As shown in FIG.
C, and place tester pins on the silicon wafer W.
Press the probe card 601 while heating and cooling
And a continuity test is performed. Note that FIG.
And V_Three Is the power supply 3 applied to the probe card 601
3, V _Two Is the power supply 32 applied to the resistance heating element 41,₁ 
Is applied to the chuck top conductor layer 2 and the guard electrode 5
The power supply 31 is connected to the ground electrode 6.
Connected and grounded.

[0004]

However, a wafer prober having such a metal chuck top includes:
There were the following problems.

First, since the chuck top is made of metal, the thickness of the chuck top must be as thick as about 15 mm. The reason why the chuck top is made thicker is that, in the case of a thin metal plate, the chuck top is pressed by the tester pin of the probe card, and the metal plate of the chuck top is warped or distorted, and is placed on the metal plate. This is because the silicon wafer is damaged or tilted. For this reason, it is necessary to make the chuck top thick, but as a result, the weight of the chuck top becomes large and bulky.

Further, despite the use of a metal having a high thermal conductivity, the temperature rise and fall characteristics are poor, and the temperature of the chuck top plate does not quickly follow changes in voltage or current amount. It is difficult to control, and if a silicon wafer is placed at a high temperature, the temperature cannot be controlled.

[0007]

Therefore, the present inventors used a rigid ceramic instead of a metal chuck top and formed a chuck top conductor layer on the surface of the ceramic substrate. Although a wafer prober on which a guard electrode and / or a ground electrode is formed has been recalled, when this guard electrode or the like is formed of a metal plate of a high melting point metal such as tungsten, the heat between these metals and the surrounding ceramics is not considered. There has been a problem that the guard electrode and the like are separated from the ceramic substrate due to the difference in expansion.

The inventors of the present invention have conducted intensive studies in view of the above problems, and as a result, it has been found that at least part of the guard electrode and the like of the ceramic substrate is made of a conductive sintered body to solve the above-mentioned problems. They found what they could do and completed the present invention.

That is, a wafer prober according to the present invention is a wafer prober in which a chuck top conductor layer is formed on a surface of a ceramic substrate, and a guard electrode and / or a ground electrode are disposed on the ceramic substrate.
At least a part of the guard electrode and / or the ground electrode is made of a conductive sintered body. Further, the ceramic substrate of the present invention is a ceramic substrate having a chuck top conductor layer formed on a surface thereof and a guard electrode and / or a ground electrode provided thereon, wherein the guard electrode and / or the ground electrode are provided. It is characterized in that at least a part is made of a conductive sintered body.

[0010] In the wafer prober and the ceramic substrate used for the wafer prober, the surface of the guard electrode and / or the ground electrode is made of a conductive ceramic, or the guard electrode and / or the ground. Desirably, all of the electrodes are made of conductive ceramic, or the guard electrode and / or the ground electrode is made of a high melting point metal.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION A wafer prober of the present invention (hereinafter, referred to as a wafer prober)
(Including ceramic substrates used for wafer probers)
Is a wafer prober on which a chuck top conductor layer is formed on a surface of a ceramic substrate, and a guard electrode and / or a ground electrode is formed on the ceramic substrate, wherein at least the guard electrode and / or the ground electrode is provided. It is characterized in that a part is made of a conductive sintered body. The ceramic substrate of the present invention is used for a wafer prober, and specifically functions as a stage for probing a semiconductor wafer (a so-called chuck top).

In the present invention, since at least a part of the guard electrode and / or the ground electrode is made of a conductive sintered body, the guard electrode is caused by a difference in thermal expansion between these electrodes and the surrounding ceramic. Peeling between the ceramic substrate and the like hardly occurs. Further, by forming at least a part (surface) of the guard electrode and / or the ground electrode with conductive ceramic, for example, 50%
Even when heating to a high temperature of 0 ° C. or more, fluctuations in the electrical conductivity of the electrode due to the reaction between the surrounding ceramic and the guard electrode or the like can be suppressed. The conductive sintered body includes, for example, a high melting point metal, a conductive ceramic, and the like.

Further, in the present invention, a ceramic substrate having high rigidity is used, and a guard electrode and / or
Alternatively, by arranging the ground electrodes, these have a reinforcing effect, and even when the tester pins of the probe card are pressed, warpage can be prevented. Therefore, the thickness of the chuck top can be made smaller than that of metal.

FIG. 1A is a cross-sectional view schematically showing one embodiment of a wafer prober of the present invention, and FIG.
It is the elements on larger scale sectional view. 2 is a plan view of the wafer prober shown in FIG. 1, FIG. 3 is a bottom view thereof, and FIG. 4 is a cross-sectional view of the wafer prober shown in FIG.

In this wafer prober, concentric grooves 7 are formed on the surface of the ceramic substrate 3 having a circular shape in plan view, and a plurality of suction holes 8 for sucking a silicon wafer are formed in a part of the grooves 7. The chuck top conductor layer 2 for connection with the electrode of the silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 7.

On the other hand, on the bottom surface of the ceramic substrate 3, a heating element 41 having a concentric circular shape in plan view as shown in FIG. 3 is provided to control the temperature of the silicon wafer. Has external terminal pins 191 connected and fixed. Further, inside the ceramic substrate 3, a guard electrode 5 (5a, 5b) for canceling the stray capacitor is provided, and a ground electrode 6 (6a, 6b) for canceling noise from the temperature control means. Is provided.

The guard electrode 5 is a surface electrode layer 5 made of a conductive ceramic such as tungsten carbide.
b and internal electrode layer 5 made of a refractory metal such as tungsten
The ground electrode 6 also includes a surface electrode layer 6b made of conductive ceramic and an internal electrode layer 6a made of a high melting point metal. Note that a part of the surface of the guard electrode 5 and the ground electrode 6 may be made of conductive ceramic, or the whole may be made of conductive ceramic. The guard electrode 5
And the ground electrode 6 may be formed of a high melting point metal. In FIG. 2 and subsequent figures, the guard electrode 5 and the ground electrode 6 are represented by one layer.

In the wafer prober shown in FIGS. 1 to 4, the guard electrode 5 and the ground electrode 6 are formed inside the ceramic substrate 3, but the guard electrode and the ground electrode are provided outside the ceramic substrate. It may be.

FIG. 8 shows a wafer prober apparatus in which a chuck top conductor layer and a guard electrode are provided on both main surfaces thereof, and a ground electrode is provided on the guard electrode via an insulator. It is sectional drawing which shows a ceramic substrate typically.

In the ceramic substrate 73 used in this wafer prober device, the chuck top conductor layer 7
2, a guard electrode 75 is formed on the bottom surface, a ceramic plate 77 of alumina or the like is provided on the guard electrode 75, and a ground electrode 76 is provided on the ceramic plate 77.

The ceramic substrate 77 is connected via an insulating layer 74 formed on the ceramic substrate 73, and a gap between the ceramic substrate 73 and the ceramic plate 77 is formed by a guard electrode 75 and the insulating layer 74. The suction hole 78 is completely filled, and is formed so as to penetrate the ceramic substrate 73, the insulating layer 74, and the ceramic plate 77.

The insulating layer 74 is formed, for example, by applying an inorganic adhesive such as silica sol to the bottom surface of a ceramic substrate, and then superposing a ceramic plate 77 thereon and performing heat treatment. And has adhesive strength.

The ceramic substrate 73 used in this wafer prober device has a heating element 71 provided therein.

The wafer prober of the present invention is, for example, shown in FIG.
It has a configuration as shown in FIGS. Hereinafter, each member constituting the wafer prober, and
Other embodiments of the wafer prober according to the present invention will be sequentially described in detail.

As described above, the guard electrode 5 is an electrode for canceling the stray capacitor interposed in the measurement circuit, and is supplied with the ground potential of the measurement circuit (ie, the chuck top conductor layer 2 in FIG. 1). I have. The ground electrode 6 is provided to cancel noise from the temperature control unit.

As the guard electrode 5 and the ground electrode 6,
For example, copper, titanium, chromium, nickel, precious metals (gold,
At least one selected from refractory metals such as silver and platinum), tungsten and molybdenum, or at least one selected from conductive ceramics such as tungsten carbide and molybdenum carbide can be used. At least a part of the guard electrode 5 and / or the ground electrode 6 is made of a sintered body of the refractory metal and / or the conductive ceramic.

Therefore, the guard electrode 5 and the ground electrode 6 may have a surface or a part thereof made of a conductive sintered body, or may be made entirely of a conductive sintered body. In addition, since the surface is made of a conductive ceramic, even when the surface is heated to a high temperature of 500 ° C. or more, a change in the conductivity of the electrode due to the reaction between the surrounding ceramic and the guard electrode or the like hardly occurs.

The total thickness of the guard electrode 5 and the ground electrode 6 is preferably 1 to 20 μm. If the thickness of these electrodes is less than 1 μm, the resistance increases, while if it exceeds 20 μm, the thermal shock resistance decreases. When surface electrode layers 5b and 6b made of conductive ceramic are formed on these surfaces, the thickness thereof is desirably 5 to 50% of the thickness of internal electrode layer 6a. If it is less than 5%, the difference in the coefficient of thermal expansion cannot be completely absorbed, so that cracks and the like are likely to occur. On the other hand, if it exceeds 50%, the resistance of the electrode changes, making it difficult to use.

The guard electrode 5 and the ground electrode 6 are desirably provided in a lattice as shown in FIG. The adhesion between ceramics above and below the conductor layer can be improved,
This is because, even when a thermal shock is applied, no crack occurs and no separation occurs at the interface between the guard electrode 5, the ground electrode 6, and the ceramic.

Further, a capacitor is formed between the chuck top conductor layer 2 and the guard electrode 5. When the guard electrode 5 is formed in a lattice shape, unnecessary capacitance can be reduced. The portion of the grid where the conductor is not formed may be a square as shown in FIG. 4, a circle or an ellipse. Also,
When the conductor-free portion is rectangular, a radius may be provided at the corner.

The ceramic substrate used in the wafer prober of the present invention is desirably at least one selected from ceramics belonging to nitride ceramics, carbide ceramics and oxide ceramics.

Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride and the like. Further, as the carbide ceramic, metal carbide ceramic,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples include tantalum carbide and tansten carbide.

Examples of the oxide ceramic include metal oxide ceramics such as alumina, zirconia, cordierite, and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Also, among nitride ceramics, aluminum nitride is most preferred. This is because the thermal conductivity is the highest at 180 W / m · K.

In the above ceramic, 50 to 50 carbon atoms are contained.
It is desirable to contain 5000 ppm. This is because the electrode pattern in the ceramic is concealed and high radiant heat is obtained. The carbon may be one or both of crystalline or non-detectable amorphous by X-ray diffraction.

The thickness of the chuck top ceramic substrate in the present invention must be greater than the thickness of the chuck top conductor layer, and specifically, is preferably 1 to 10 mm. In the present invention, a chuck top conductor layer is formed on the surface of the ceramic substrate in order to use the back surface of the silicon wafer as an electrode.

The thickness of the chuck top conductor layer is 1 to
20 μm is desirable. If the thickness is less than 1 μm, the resistance value becomes too high to function as an electrode, while if it exceeds 20 μm, the conductor tends to be peeled off due to the stress of the conductor.

As the chuck top conductor layer, for example,
At least one metal selected from refractory metals such as copper, titanium, chromium, nickel, precious metals (such as gold, silver, and platinum), tungsten, and molybdenum can be used.

The chap conductor layer may be a porous body made of metal or conductive ceramic. In the case of a porous body, it is not necessary to form a groove for suction and suction as described later, and not only can the wafer be prevented from being damaged due to the presence of the groove, but also a uniform suction and suction over the entire surface. It is because it can realize.

As such a porous body, a metal sintered body can be used. When a porous body is used, the thickness can be 1 to 200 μm. For joining the porous body and the ceramic substrate, solder or brazing material is used.

It is desirable that the chuck top conductor layer contains nickel. This is because the hardness is high and the tester pin is hardly deformed even when pressed. As a specific configuration of the chuck top conductor layer, for example, a nickel sputtering layer is formed first, an electroless nickel plating layer is provided thereon, and titanium, molybdenum, and nickel are sputtered in this order. A material obtained by depositing nickel thereon by electroless plating or electrolytic plating may be used.

Alternatively, titanium, molybdenum, and nickel may be sputtered in this order, and copper and nickel may be further deposited thereon by electroless plating. This is because the resistance of the chuck top electrode can be reduced by forming the copper layer.

Further, titanium and copper may be sputtered in this order, and nickel may be further deposited thereon by electroless plating or electroless plating. It is also possible to sputter chromium and copper in this order, and further deposit nickel thereon by electroless plating or electroless plating.

Titanium and chromium can improve the adhesion to ceramic, and molybdenum can improve the adhesion to nickel. Titanium and chromium have a thickness of 0.1 to 0.5 μm, molybdenum has a thickness of 0.5 to 7.0 μm, and nickel has a thickness of 0.4 to 2.5
μm is desirable.

Preferably, a noble metal layer (gold, silver, platinum, palladium) is formed on the surface of the chuck top conductor layer. This is because the noble metal layer can prevent contamination due to migration of the base metal. The thickness of the noble metal layer is desirably 0.01 to 15 μm.

In the present invention, it is desirable to provide a temperature control means on the ceramic substrate. This is because the conduction test of the silicon wafer can be performed while heating or cooling.

The temperature control means may be a Peltier element in addition to the heating element 41 shown in FIG. When a heating element is provided, a blowing port for a refrigerant such as air may be provided as cooling means. A plurality of heating elements may be provided. In this case, it is desirable that the patterns of the respective layers are formed so as to complement each other, and that the pattern is formed on any layer when viewed from the heating surface. For example, the structure is a staggered arrangement.

Examples of the heating element include a sintered body of metal or conductive ceramic, a metal foil, a metal wire, and the like. As the metal sintered body, at least one selected from tungsten and molybdenum is preferable. This is because these metals are relatively hard to oxidize and have a resistance value sufficient to generate heat.

The conductive ceramic may be at least one selected from carbides of tungsten and molybdenum.
Seeds can be used. Further, when a heating element is formed outside the ceramic substrate, it is desirable to use a noble metal (gold, silver, palladium, platinum) or nickel as the metal sintered body. Specifically, silver, silver-palladium, or the like can be used. The metal particles used in the metal sintered body may be spherical, scaly, or a mixture of spherical and scaly.

A metal oxide may be added to the metal sintered body. The use of the metal oxide is for bringing the nitride ceramic or carbide ceramic and the metal particles into close contact. Although it is not clear why the metal oxide improves the adhesion between the nitride ceramic or the carbide ceramic and the metal particles, an oxide film is slightly formed on the surface of the metal particles and the surface of the nitride ceramic or the carbide ceramic. It is considered that the oxide films are sintered and integrated via the metal oxide, and the metal particles and the nitride ceramic or the carbide ceramic adhere to each other.

As the metal oxide, for example,
Lead, zinc oxide, silica, boron oxide (B _Two O_Three ), Al
At least one selected from Mina, Yttria and Titania
Species are preferred. These oxides increase the resistance of the heating element.
Metal particles and nitride ceramic or
This is because the adhesion with the carbide ceramic can be improved.

The above metal oxide is used in an amount of 0.
It is desirable that the content be 1% by weight or more and less than 10% by weight. This is because the resistance value does not become too large, and the adhesion between the metal particles and the nitride ceramic or the carbide ceramic can be improved.

The ratio of lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is such that when the total amount of metal oxide is 100 parts by weight, 10 parts by weight, 1 to 30 parts by weight of silica, 5 to 50 parts by weight of boron oxide, 20 to 7 parts of zinc oxide
0 parts by weight, alumina 1 to 10 parts by weight, yttria 1
-50 parts by weight and 1-50 parts of titania are preferred. However, it is desirable that the total be adjusted so that the total does not exceed 100 parts by weight. This is because these ranges are ranges in which the adhesion with the nitride ceramic can be particularly improved.

When the heating element is provided on the surface of the ceramic substrate, it is desirable that the surface of the heating element be covered with a metal layer 410 (see FIG. 12E). The heating element is a sintered body of metal particles, and is easily oxidized when exposed, and the oxidation changes the resistance value. Therefore, oxidation can be prevented by coating the surface with a metal layer.

The thickness of the metal layer is desirably 0.1 to 10 μm. This is because the oxidation of the heating element can be prevented without changing the resistance value of the heating element. The metal used for coating may be a non-oxidizing metal. Specifically, at least one selected from gold, silver, palladium, platinum, and nickel is preferable. Among them, nickel is more preferable. The heating element requires a terminal for connection to a power supply, and this terminal is attached to the heating element via solder. Nickel prevents heat diffusion of the solder. As connection terminals, terminal pins made of Kovar can be used. In the case where the heating element is formed inside the heater plate, the heating element surface is not oxidized, and thus no coating is required. When the heating element is formed inside the heater plate, a part of the surface of the heating element may be exposed.

As the metal foil used as the heating element, it is preferable to use a nickel foil or a stainless steel foil as a heating element by forming a pattern by etching or the like. The patterned metal foil may be bonded with a resin film or the like. Examples of the metal wire include a tungsten wire and a molybdenum wire.

When a Peltier element is used as the temperature control means, heat generation,
This is advantageous because both cooling can be performed. As shown in FIG. 7, the Peltier element is a p-type or n-type thermoelectric element 440.
Are connected in series and joined to a ceramic plate 441 or the like. As a Peltier element,
For example, a silicon-germanium-based material, a bismuth-antimony-based material, a lead / tellurium-based material, and the like can be given.

It is desirable that a groove 7 and an air suction hole 8 are formed on the surface of the wafer prober according to the present invention on which the chuck top conductor layer is formed, as shown in FIG. A plurality of suction holes 8 are provided to achieve uniform suction. Silicon wafer W
This is because the silicon wafer W can be sucked by sucking air from the suction hole 8 while placing the wafer.

As the wafer prober in the present invention,
For example, as shown in FIG. 1, a heating element 41 is provided on the bottom surface of the ceramic substrate 3, and a layer of the guard electrode 5 and a layer of the ground electrode 6 are provided between the heating element 41 and the chuck top conductor layer 2. 5, a flat heating element 42 is provided inside the ceramic substrate 3 as shown in FIG. 5, and a guard electrode 5 and a ground electrode 6 are provided between the heating element 42 and the chuck top conductor layer 2. 6, a metal wire 43 as a heating element is buried inside the ceramic substrate 3 as shown in FIG. 6, and a guard electrode 5 is provided between the metal wire 43 and the chuck top conductor layer 2. The wafer prober 301 provided with the ground electrode 6 and the Peltier element 44 as shown in FIG.
(Composed of a thermoelectric element 440 and a ceramic substrate 441) is formed outside the ceramic substrate 3 and the Peltier element 44
Wafer prober 401 having a configuration in which guard electrode 5 and ground electrode 6 are provided between the electrode and chuck top conductor layer 2.
And the like. Each wafer prober always has a groove 7 and a suction hole 8.

Further, as the wafer prober of the present invention,
As shown in FIG. 8, the chuck top conductor layer 72 and the guard electrode 75 are provided on both main surfaces of the ceramic substrate 73, respectively.
Is provided, and a wafer prober 501 having a configuration in which a ground electrode 76 is provided on a guard electrode 75 via a ceramic plate 77 which is an insulator.

In the present invention, as shown in FIGS. 1 to 8, heating elements 42, 43, and 71 are formed inside the ceramic substrate 3 (FIGS. 5, 6, and 8), and the guard electrode 5 is provided inside the ceramic substrate 3. Since the ground electrodes 6 (FIGS. 1 to 7) are formed, connection portions (through holes) 16, 17, 18, and 87 for connecting these and external terminals are required.

The through holes 16, 17, 18, 87 are
The guard electrode 5 and the ground electrode 6 are extended from the vicinity of the ends, and are exposed at the bottom of the ceramic substrate through the blind holes 180.
The connection may be made by external terminal pins 19 and 190, or may be exposed by a blind hole (not shown) near the side surface and may be connected by an external terminal. Through hole 16,
17, 18, and 87 are desirably made of a high melting point metal such as tungsten paste or molybdenum paste, or a conductive ceramic such as tungsten carbide or molybdenum carbide. In addition, through hole 1
The diameters of 6, 17, 18, and 87 are desirably 0.1 to 10 mm. This is because cracks and distortion can be prevented while preventing disconnection. External terminal pins are connected using the through holes as connection pads (see FIG. 12 (g)).

Regarding the production of the bag hole 180, after the green sheet is produced, a through hole which becomes the bag hole 180 may be formed in the green sheet by punching or the like. After the ceramic substrate is produced, sand blasting, drilling or the like is used. A blind hole 180 may be formed.

The connection is made by solder or brazing material. As brazing materials, silver brazing, palladium brazing, aluminum brazing,
Use gold brazing. As the gold solder, an Au-Ni alloy is desirable. This is because the Au-Ni alloy has excellent adhesion to tungsten.

The ratio of Au / Ni is [81.5-82.
5 (% by weight)] / [18.5 to 17.5 (% by weight)] is desirable. The thickness of the Au—Ni layer is desirably 0.1 to 50 μm. This is because the range is sufficient to secure the connection.
In addition, 500 ° C. to 100 ° C. in a high vacuum of 10 ⁻⁶ to 10 ⁻⁵ Pa
When used at a high temperature of 0 ° C., the Au—Cu alloy deteriorates, but the Au—Ni alloy is advantageous because such deterioration does not occur. The total amount of impurity elements in the Au—Ni alloy is 1
When the amount is 00 parts by weight, it is desirably less than 1 part by weight.

In the present invention, a thermocouple can be embedded in a ceramic substrate as needed. This is because the temperature of the heating element can be measured by a thermocouple, and the temperature and the amount of current can be changed based on the data to control the temperature.
The size of the joining portion of the metal wires of the thermocouple is equal to or larger than the element diameter of each metal wire.
5 mm or less is preferable. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. For this reason, the temperature controllability is improved and the temperature distribution on the heated surface of the wafer is reduced. As the thermocouple, for example, JIS-C-160
2 (1980), K-type, R-type, B-type
Type, S type, E type, J type, and T type thermocouples.

The K type is a combination of a Ni / Cr alloy and a Ni alloy, the R type is a combination of a Pt-13% Rh alloy and Pt, and the B type is a combination of a Pt-30% Rh alloy and a Pt-65% Rh alloy. , S type is a combination of Pt-10% Rh alloy and Pt,
Type E is a combination of Ni / Cr alloy and Cu / Ni alloy, J
The mold is a combination of Fe and Cu / Ni alloy, and the T mold is Cu and C
It is a combination of u / ni alloys.

FIG. 9 is a cross-sectional view schematically showing the support base 11 on which the wafer prober of the present invention having the above-described configuration is installed. The support base 11 has a coolant outlet 12 formed therein, and the coolant is blown from the coolant inlet 14. Further, air is sucked from the suction port 13 to suck a silicon wafer (not shown) mounted on the wafer prober into the groove 7 through the suction hole 8.

FIG. 10 (a) is a longitudinal sectional view schematically showing another example of the support table, and FIG. 10 (b) is a sectional view taken along line BB in FIG. 10 (a). As shown in FIG. 10, a large number of support columns 15 are provided on this support so that the wafer prober does not warp due to the pressing of the tester pins of the probe card.
Is provided. For the support, an aluminum alloy, stainless steel, or the like can be used.

Next, an example of a method of manufacturing a wafer prober according to the present invention will be described with reference to the sectional views shown in FIGS. (1) First, a green sheet 30 is obtained by mixing a ceramic powder such as an oxide ceramic, a nitride ceramic, and a carbide ceramic with a binder and a solvent. As the ceramic powder described above, for example, aluminum nitride,
Silicon carbide or the like can be used, and if necessary,
A sintering aid such as yttria may be added.

The binder is preferably at least one selected from an acrylic binder, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, as the solvent, at least one selected from α-terpineol and glycol is desirable. A paste obtained by mixing them is formed into a sheet by a doctor blade method to produce a green sheet 30.

The green sheet 30 may be provided with a through hole for inserting a support pin of a silicon wafer and a concave portion for burying a thermocouple as needed. Through holes and recesses
It can be formed by punching or the like. The thickness of the green sheet 30 is preferably about 0.1 to 5 mm.

Next, a guard electrode is provided on the green sheet 30.
Print the ground electrode. The printing is green sheet 30
Is performed so as to obtain a desired aspect ratio in consideration of the shrinkage ratio of the guard electrode, thereby obtaining the guard electrode print 50 and the ground electrode print 60. The printed body is formed by printing a conductive paste containing conductive ceramic, metal particles, and the like.

As the conductive ceramic particles contained in these conductive pastes, carbides of tungsten or molybdenum are most suitable. This is because it is difficult to be oxidized and the thermal conductivity is not easily reduced. Further, as the metal particles, for example, tungsten, molybdenum, platinum, nickel and the like can be used.

The average particle diameter of the conductive ceramic particles and metal particles is preferably 0.1 to 5 μm. This is because it is difficult to print the paste if these particles are too large or too small. As such a paste, 85 to 97 parts by weight of metal particles or conductive ceramic particles, at least one kind of binder 1.5 selected from acrylic, ethyl cellulose, butyl cellosolve and polyvinyl alcohol are used.
The best is a paste prepared by mixing 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol, glycol, ethyl alcohol and butanol.

When the surface is made of a conductive ceramic and the inside is made of a high melting point metal, for example, carbon or the like is mixed in a green sheet, and tungsten and carbon are reacted in a sintering process to form tungsten carbide. By producing a method such as a method of making the surface layer a conductive ceramic, or when printing a conductive paste, after printing a paste containing a conductive ceramic powder on a green sheet, printing a paste containing a metal powder. And printing a paste containing a conductive ceramic powder thereon to completely wrap the paste layer containing the metal powder. Further, holes formed by punching or the like are filled with a conductive paste to form through-hole prints 160 and 17.
Get 0.

Next, as shown in FIG. 11A, the green sheet 3 having the prints 50, 60, 160, 170
0 and the green sheet 30 having no printed body are laminated. Green sheet 3 having no printed body on the heating element forming side
The reason why 0 is laminated is to prevent the end face of the through hole from being exposed and being oxidized during firing for forming the heating element. If the baking for forming the heating element is performed while the end face of the through hole is exposed, it is necessary to sputter a metal that is difficult to oxidize, such as nickel. Good.

(2) Next, as shown in FIG.
The laminate is heated and pressed to sinter the green sheet and the conductive paste. Heating temperature is 1000-2
000 ° C., the pressure is preferably 100 to 200 kg / cm ² , and the heating and pressurization are performed in an inert gas atmosphere. As the inert gas, argon, nitrogen, or the like can be used. In this process, the through holes 16, 1
7, a guard electrode 5, and a ground electrode 6 are formed.

(3) Next, as shown in FIG.
Grooves 7 are provided on the surface of the sintered body. The groove 7 is formed by a drill, sand blast, or the like. (4) Next, as shown in FIG. 11D, a conductive paste is printed on the bottom surface of the sintered body, and the printed paste is fired to produce the heating element 41.

(5) Next, as shown in FIG.
After sputtering titanium, molybdenum, nickel, or the like on the wafer mounting surface (groove forming surface), the chuck top conductor layer 2 is provided by performing electroless nickel plating or the like. At this time, a protective layer 410 is also formed on the surface of the heating element 41 by electroless nickel plating or the like.

(6) Next, as shown in FIG.
A suction hole 8 penetrating from the groove 7 to the back surface and a blind hole 180 for connecting an external terminal are formed by drilling, sand blasting or the like. At least a part of the inner wall of the blind hole 180 is made conductive, and the made inner wall is formed of a guard electrode,
It is desirable to be connected to a ground electrode or the like. In order to make the inner wall conductive, it is necessary to form a conductive paste layer on a portion to be the inner wall of the blind hole 180 when the green sheet 30 is manufactured.

(7) Finally, as shown in FIG. 12 (g), after solder paste is printed on the mounting portion on the surface of the heating element 41, the external terminal pins 191 are placed thereon, and heating is performed to reflow. The heating temperature is preferably from 200 to 500C.

Further, external terminals 19 and 190 are provided in the blind hole 180 via gold brazing. Furthermore, if necessary, a bottomed hole can be provided, and a thermocouple can be embedded therein. As the solder, alloys such as silver-lead, lead-tin, and bismuth-tin can be used. The thickness of the solder layer is
0.1 to 50 μm is desirable. This is because the range is sufficient to secure the connection by soldering.

In the above description, the wafer prober 101
Although the wafer prober 201 (see FIG. 5) is manufactured by using the example of FIG. 1 (see FIG. 1), the heating element may be printed on a green sheet. When manufacturing the wafer prober 301 (see FIG. 6), a guard electrode is provided on the ceramic powder.
What is necessary is just to embed and sinter a metal plate as a ground electrode and a metal wire as a heating element. Further, when manufacturing the wafer prober 401 (see FIG. 7), the Peltier element may be joined via a sprayed metal layer.

Also, a wafer prober 501 (see FIG. 8)
When manufacturing a ceramic substrate, a heating element is printed on a green sheet to form a ceramic substrate, a guard electrode is formed on the bottom surface, and a ceramic plate provided with a ground electrode is bonded to the ceramic substrate with an inorganic adhesive. I just need.

[0086]

The present invention will be described in more detail below. (Example 1) Production of wafer prober 101 (see FIG. 1) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttria (average particle size: 0.1 μm)
4 μm) 4 parts by weight, acrylic binder 11.5 parts by weight,
Using a composition obtained by mixing 0.5 part by weight of a dispersant and 53 parts by weight of alcohol composed of 1-butanol and ethanol, molding was performed by a doctor blade method to a thickness of 0.4.
A 7 mm green sheet was obtained.

(2) After drying this green sheet at 80 ° C. for 5 hours, a through-hole for a through-hole for connecting a heating element and an external terminal pin was provided by punching. (3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, α-
A conductive paste A was prepared by mixing 3.5 parts by weight of a terpineol solvent and 0.3 parts by weight of a dispersant.

Further, 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, α
-Conductive paste B was prepared by mixing 3.7 parts by weight of a terpineol solvent and 0.2 parts by weight of a dispersant.

Next, a grid-shaped guard electrode printed body 50 and a ground electrode printed body 60 were printed and printed on the green sheet by screen printing using the conductive paste A. In addition, conductive paste B was filled in through holes for through holes for connecting to terminal pins.

Further, 50 printed green sheets and 50 unprinted green sheets are laminated and
A laminate was produced by integrating at 30 ° C. and a pressure of 80 kg / cm ² (see FIG. 11A).

(4) Next, this laminate is placed in nitrogen gas for 6 hours.
Degreasing at 00 ° C for 5 hours, 1890 ° C, pressure 150kg /
Hot pressing was performed for 3 hours at ² cm ² to obtain a 3 mm-thick aluminum nitride plate. The obtained plate-like body was formed with a diameter of 230
The plate was cut into a circular shape of mm to obtain a ceramic plate (see FIG. 11B). The size of the through holes 16 and 17 was 0.2 mm in diameter and 0.2 mm in depth. The thickness of the guard electrode 5 and the ground electrode 6 is 10 μm,
The formation position of the guard electrode 5 is 1 mm from the wafer mounting surface,
The formation position of the ground electrode 6 is set at a distance of 1.2 from the wafer mounting surface.
mm. Further, the size of one side of the non-conductor-formed region of the guard electrode 5 and the ground electrode 6 was 0.5 mm.

(5) After polishing the plate-like body obtained in (4) above with a diamond grindstone, a mask is placed, and blast processing with SiC particles or the like is performed on the surface to form a concave portion for a thermocouple (not shown). ) And a groove 7 for adsorbing a silicon wafer (width 0.5
mm and a depth of 0.5 mm) (see FIG. 11C).

(6) Further, the heating element 41 was printed on the surface facing the wafer mounting surface. For printing, a conductive paste was used. The conductive paste is Solvest PS manufactured by Tokurika Kagaku Kenkyusho, which is used to form through holes in printed wiring boards.
603D was used. This conductive paste is a silver / lead paste, and includes lead oxide, zinc oxide, silica, boron oxide,
Metal oxide composed of alumina (the weight ratio of each is
5/55/10/25/5) was contained in an amount of 7.5 parts by weight based on 100 parts by weight of silver. The silver had a scaly shape with an average particle size of 4.5 μm.

(7) The heater plate on which the conductive paste was printed was heated and fired at 780 ° C. to sinter silver and lead in the conductive paste and to bake the ceramic substrate 3. Further, the heater plate is immersed in an electroless nickel plating bath composed of an aqueous solution containing 30 g / l of nickel sulfate, 30 g / l of boric acid, 30 g / l of ammonium chloride and 60 g / l of Rochelle salt, so that the surface of the silver sintered body 41 A nickel layer 410 having a thickness of 1 μm and a boron content of 1% by weight or less was deposited. Thereafter, the heater plate was annealed at 120 ° C. for 3 hours. The heating element made of a silver sintered body has a thickness of 5 μm, a width of 2.4 mm, and a sheet resistivity of 7.7 m.
Ω / □ (FIG. 11D).

(8) A titanium layer, a molybdenum layer, and a nickel layer were sequentially formed on the surface where the grooves 7 were formed by a sputtering method. As a device for sputtering, SV-4540 manufactured by Japan Vacuum Engineering Co., Ltd. was used. Sputtering conditions were as follows: atmospheric pressure: 0.6 Pa, temperature: 100 ° C., power: 200 W. Sputtering time was adjusted for each metal within a range of 30 seconds to 1 minute. From the image of the X-ray fluorescence spectrometer, the thickness of the obtained film was 0.1 mm for the titanium layer.
The thickness was 3 μm, the thickness of the molybdenum layer was 2 μm, and the thickness of the nickel layer was 1 μm.

(9) Nickel sulfate 30 g / l, boric acid 3
Electroless nickel plating bath comprising an aqueous solution containing 0 g / l, ammonium chloride 30 g / l and Rochelle salt 60 g / l, and nickel sulfate 250-350 g / l,
Nickel chloride 40-70 g / l, boric acid 30-50 g /
The ceramic plate obtained in the above (8) is immersed in an electrolytic nickel plating bath containing sulfuric acid and adjusted to pH 2.4 to 4.5 with sulfuric acid, and has a thickness on the surface of the metal layer formed by sputtering. A nickel layer having a thickness of 7 μm and a boron content of 1% by weight or less was deposited and annealed at 120 ° C. for 3 hours. The surface of the heating element does not pass current and is not covered with electrolytic nickel plating.

Further, 2 g of potassium potassium cyanide /
l, 75 g / l ammonium chloride, 50 g / l sodium citrate and 10 g / l sodium hypophosphite in an electroless gold plating solution at 93 ° C. for 1 minute,
A gold plating layer having a thickness of 1 μm was formed on the nickel plating layer 15 (see FIG. 12E).

(10) An air suction hole 8 extending from the groove 7 to the back surface is formed by drilling.
Bag holes 180 for exposing 6 and 17 were similarly provided by drilling (see FIG. 12 (f)). This blind hole 18
0 is a Ni-Au alloy (Au 81.5% by weight, Ni18.
(4% by weight, 0.1% by weight of impurities), and heated and reflowed at 970 ° C. to connect the external terminal pins 19 and 190 made of Kovar (see FIG. 12 (g)).
Also, external terminal pins 191 made of Kovar were formed on the heating element via solder (tin 9 / lead 1).

(11) Next, a plurality of thermocouples for temperature control were buried in the recesses to obtain a wafer prober heater 101. (12) This wafer prober 101 was combined with a stainless steel support having the cross-sectional shape of FIG. 9 via a heat insulating material 10 made of ceramic fiber (trade name: IBIWOOL, manufactured by IBIDEN Co., Ltd.). The support table 11 has a coolant outlet 12, and can adjust the temperature of the wafer prober 101. In addition, the suction port 13 sucks a coolant or air to suck the silicon wafer.

Embodiment 2 A wafer prober 201 (FIG. 5)
(1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttria (average particle size: 0.1 μm)
4 μm) 4 parts by weight, acrylic binder 11.5 parts by weight,
0.5 parts by weight of dispersant, 0.9 parts by weight of carbon powder and alcohol 53 comprising 1-butanol and ethanol
The composition in which parts by weight were mixed was molded by a doctor blade method to obtain a green sheet having a thickness of 0.47 mm.

(2) After drying the green sheet at 80 ° C. for 5 hours, a through-hole for a through-hole for connecting a heating element and an external terminal pin was provided by punching. (3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, α-
A conductive paste A was prepared by mixing 3.5 parts by weight of a terpineol solvent and 0.3 parts by weight of a dispersant.

Further, 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, α
-Conductive paste B was prepared by mixing 3.7 parts by weight of a terpineol solvent and 0.2 parts by weight of a dispersant.

Next, a grid-shaped printed body for a guard electrode and a printed body for a ground electrode were printed on the green sheet by screen printing using the conductive paste B. further,
Using the conductive paste A, the heating element was printed as a concentric pattern as shown in FIG.

The conductive paste B was filled in a through hole for a through hole for connecting to a terminal pin. Further, 50 printed green sheets and unprinted green sheets are laminated on each other at 130 ° C. and 80 kg.
/ Cm ² to obtain a laminate.

(4) Next, this laminate is placed in nitrogen gas for 6 hours.
Degreasing at 00 ° C for 5 hours, 1890 ° C, pressure 150kg /
Hot pressing was performed for 3 hours at ² cm ² to obtain a 3 mm-thick aluminum nitride plate. This was cut into a circular shape having a diameter of 230 mm to obtain a ceramic plate. The size of the through hole was 2.0 mm in diameter and 3.0 mm in depth.
The thickness of the guard electrode 5 and the ground electrode 6 is 6 μm,
The formation position of the guard electrode 5 is 0.7 m from the wafer mounting surface.
m, the formation position of the ground electrode 6 was 1.4 mm from the wafer mounting surface, and the formation position of the heating element was 2.8 mm from the wafer mounting surface. Further, the size of one side of the non-conductor-formed region of the guard electrode 5 and the ground electrode 6 was 0.5 mm.

(5) The plate obtained in the above (4) is polished with a diamond grindstone, a mask is placed, and a blast treatment with SiC particles or the like is performed on the surface to form a concave portion for a thermocouple (not shown). ) And a groove 7 for adsorbing a silicon wafer (width 0.5
mm, depth 0.5 mm).

(6) Titanium, molybdenum and nickel layers were formed on the surface where the grooves 7 were formed by sputtering. As a device for sputtering, SV-4540 manufactured by Japan Vacuum Engineering Co., Ltd. was used. Sputtering conditions were an atmospheric pressure of 0.6 Pa, a temperature of 100 ° C., and a power of 200 W. The sputtering time was adjusted from 30 seconds to 1 minute for each metal. The obtained film was 0.5 μm for titanium, 4 μm for molybdenum, and 1.5 μm for nickel from the image of the X-ray fluorescence spectrometer.

(7) Nickel sulfate 30 g / l, boric acid 3
The ceramic plate 3 obtained in (6) is immersed in an electroless nickel plating bath comprising an aqueous solution containing 0 g / l, ammonium chloride 30 g / l, and Rochelle salt 60 g / l, and the surface of the metal layer formed by sputtering. 7μ thick
A nickel layer having a content of m and boron of 1% by weight or less was deposited and annealed at 120 ° C. for 3 hours.

Further, 2 g of potassium potassium cyanide /
1, 75 g / l ammonium chloride, 50 g / l sodium citrate, and 10 g / l sodium hypophosphite for 1 minute at 93 ° C. in an electroless gold plating solution to give a thickness of 1 μm on the nickel plating layer. Was formed.

(8) An air suction hole 8 that passes through the groove 7 to the back surface
Are formed by drilling, and through holes 16 and
Similarly, a blind hole 180 for exposing 17 was provided by drilling. A Ni-Au alloy (Au
The external terminal pins 19 and 190 made of Kovar were connected by heating and reflowing at 970 ° C. using a gold braze composed of 81.5% by weight, Ni 18.4% by weight, and impurities 0.1% by weight). The external terminals 19 and 190 may be made of W.

(9) A plurality of thermocouples for temperature control were buried in the recesses to obtain a wafer prober heater 201. This wafer prober was cut so that the guard electrode and the ground electrode were exposed, and its composition was measured by EPMA. As a result, it was found that the surface was composed of tungsten carbide. (10) The wafer prober 201 was combined with a stainless steel support having the cross-sectional shape shown in FIG. 10 via a heat insulating material 10 made of ceramic fiber (manufactured by IBIDEN, trade name: IBIWOOL). On the support table 21, a support column 15 for preventing warpage of the wafer prober is formed. Further, air is sucked from the suction port 13 to suck the silicon wafer.

Example 3 Manufacture of Wafer Prober 301 (see FIG. 6) (1) A grid-like electrode was formed by punching a 10 μm-thick tungsten foil. Two grid-like electrodes (they become guard electrode 5 and ground electrode 6, respectively)
And a tungsten wire together with 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Co., average particle size 1.1 μm), 4 parts by weight of yttria (average particle size 0.4 μm) and 0.9 part by weight of carbon powder are put into a molding die. This was hot-pressed at 1890 ° C. under a pressure of 150 kg / cm ² for 3 hours in a nitrogen gas to obtain a 3 mm-thick aluminum nitride plate.
This was cut into a circular shape having a diameter of 230 mm to obtain a plate-like body. (2) For this plate-like body, (5) to (10) of Example 2
Step 1 was performed to obtain a wafer prober 301.
Similarly, the wafer prober 301 is mounted on the support base 1 shown in FIG.
1. The wafer prober was cut so that the guard electrode and the ground electrode were exposed, and the composition was measured by EPMA. As a result, it was found that the surface was composed of tungsten carbide.

(Example 4) Production of wafer prober 401 (see FIG. 7) (1) to (5) and (8) to (10) of Example 1
After that, nickel is further sprayed on the surface opposite to the wafer mounting surface, and thereafter, a lead / tellurium-based Peltier element is joined to obtain a wafer prober 401, and the wafer prober 401 is mounted in the same manner as in Example 1. It was mounted on the support 11 shown in FIG.

Example 5 Production of a Wafer Probe Using Silicon Carbide as a Ceramic Substrate A wafer prober was produced in the same manner as in Example 3 except for the following items or conditions. That is, 100 parts by weight of silicon carbide powder having an average particle diameter of 1.0 μm was used, and two grid-like electrodes (guard electrodes 5 and 5, respectively) were used.
Ground electrode 6), and 10% by weight of tetraethoxysilane, 0.5% by weight of hydrochloric acid and 8% by weight of water on the surface.
It was fired at a temperature of 1900 ° C. using a tungsten wire coated with a 9.5 wt% sol solution. The sol solution becomes SiO ₂ by firing to form an insulating layer. Next, the wafer prober 401 obtained in the fifth embodiment was placed on the support 11 shown in FIG.

(Example 6) Production of a wafer prober using alumina as a ceramic substrate A wafer prober was produced in the same manner as in Example 1 except for the steps or conditions described below. 100 parts by weight of alumina powder (manufactured by Tokuyama, average particle size 1.5 μm)
A composition obtained by mixing 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of alcohol composed of 1-butanol and ethanol was molded by a doctor blade method to form a composition having a thickness of 0.5 mm. I got a green sheet. The firing temperature was set to 1000 ° C. Next, the wafer prober obtained in the sixth embodiment is replaced with the wafer prober shown in FIG.
Was placed on the support 11 shown in FIG.

Example 7 (1) Tungsten powder having an average particle diameter of 3 μm was put in a disk-shaped forming jig and hot-pressed at 1890 ° C. under a pressure of 150 kg / cm ² in nitrogen gas for 3 hours. , Diameter 2
A porous chuck top conductor layer made of tungsten and having a thickness of 00 mm and a thickness of 110 μm was obtained.

(2) Next, (1) to (4) of Example 1
Then, the same steps as (5) to (7) were performed to obtain a ceramic substrate having a guard electrode, a ground electrode, and a heating element.

(3) The porous chuck top conductor layer obtained in the above (1) is made of gold brazing (the same as (10) in Example 1).
Was placed on a ceramic substrate via the above powder, and reflowed at 970 ° C. (4) The same steps as (10) and (12) of Example 1 were performed to obtain a wafer prober. In the wafer prober obtained in this embodiment, the semiconductor wafer is uniformly adsorbed on the chuck top conductor layer.

Example 8 (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttria (average particle size: 0.1 μm)
4 μm) 4 parts by weight, acrylic binder 11.5 parts by weight,
Using a composition obtained by mixing 0.5 part by weight of a dispersant and 53 parts by weight of alcohol composed of 1-butanol and ethanol, molding was performed by a doctor blade method to a thickness of 0.4.
A 7 mm green sheet was obtained.

(2) After drying this green sheet at 80 ° C. for 5 hours, a through-hole for a through-hole for connecting the heating element to an external terminal pin was provided by punching. (3) 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent and 0.2 part by weight of a dispersant were mixed to form a conductive paste.

Next, a grid-shaped guard electrode printed body 50 and a ground electrode printed body 60 were printed and printed on the green sheet by screen printing using this conductive paste. In addition, a conductive paste was filled in a through hole for a through hole for connecting to a terminal pin.

Further, 50 sheets of printed green sheets and unprinted green sheets were laminated and 1
A laminate was produced by integrating at 30 ° C. and a pressure of 80 kg / cm ² (see FIG. 11A).

(4) Thereafter, firing was performed in the same manner as in Example 1 to obtain a plate-like body, and then cut into a circular shape having a diameter of 230 mm to obtain a ceramic plate-like body. Similarly, a wafer prober was obtained by performing diamond polishing, printing and baking of a heating element, plating, sputtering, and the like. Then, the obtained wafer prober was placed on the support table shown in FIG.

(Comparative Example 1) A wafer prober was manufactured in the same manner as in Example 1 except for the steps or conditions described below. A green sheet having a thickness of 100 μm was formed on the green sheet obtained by performing the same steps as in (1) and (2) of Example 1.
A metal plate for a guard electrode and a metal plate for a ground electrode formed by processing a tungsten plate having a thickness of m were mounted. The conductive paste B obtained by performing the same process as in (3) of Example 1 was filled in a through hole for a through hole. Further, a green body on which a metal plate was mounted and 50 green sheets on which no metal plate was mounted were laminated and integrated at 130 ° C. and a pressure of 80 kg / cm ² to produce a laminate. .

Next, the wafer prober obtained in Comparative Example 1 was placed on the support 11 shown in FIG.

[0126]Evaluation method  (1) Continuity test Manufactured in the above Examples and Comparative Examples placed on a support base
On the wafer prober, as shown in FIG.
While placing the wafer W and performing temperature control such as heating,
The probe card 601 was pressed to perform a continuity test.
In this continuity test, the chuck top conductor layer and the
100V was applied to each of the electrodes. Also ground
The electrodes were grounded. Apply voltage to the guard electrode as necessary.
Can be applied.

(2) Measurement of Resistance Values The wafer probers according to the above Examples and Comparative Examples were left in an atmosphere at 600 ° C. for 24 hours, and then heated and heated using a digital multimeter. Was measured.

(3) Heat cycle test The wafer probers according to the above Examples and Comparative Examples were subjected to a heat cycle test in which a heat cycle of holding at −55 ° C. for 5 minutes and then holding at 150 ° C. for 5 minutes was repeated 1,000 times. .

(4) Thermal shock test The wafer probers according to the above Examples and Comparative Examples were heated to 200 ° C. and then subjected to a thermal shock test in which the wafer probes were dropped in water. The results are shown in Table 1 below.

[0130]

[Table 1]

As a result of the continuity test, in the wafer probers according to Examples 1 to 8 and Comparative Example 1, the ceramic substrate was hardly warped, and the continuity test was successfully performed.

Further, as is clear from the results shown in Table 1, the wafer probers according to Examples 1 to 7 had a temperature of 600 ° C.
After 24 hours, there was almost no change in resistivity, whereas the wafer prober according to Comparative Example 1 had a large change in resistivity. Further, in the wafer prober according to the eighth embodiment, a part of the wafer prober had poor conduction, and the non-defective product rate was lowered.

In the wafer probers according to the first to seventh embodiments,
It is considered that since at least a part of the guard electrode and / or the ground electrode is made of a conductive ceramic, a change in the conductivity of the electrode due to the reaction between the surrounding ceramic and the guard electrode or the like is unlikely to occur. .

In the wafer probers according to Examples 1 to 7, cracks and peeling did not occur on the guard electrode and the like in the heat cycle test and the thermal shock test.
In the wafer prober according to Comparative Example 1, cracks occurred in the guard electrode and the like, and peeling between the ceramic substrate and the guard electrode and the like occurred. On the other hand, in the wafer prober according to Example 8, small cracks were generated by the heat cycle test, but no peeling was generated.

It is considered that this is because in the wafer probers according to Examples 1 to 8, at least a part of the guard electrode and / or the ground electrode is made of a conductive sintered body.

[0136]

As described above, in the wafer prober of the present invention, at least a part of the guard electrode and / or the ground electrode is formed of a conductive sintered body, so that the ceramic substrate and the guard electrode and the like are not included. Peeling is less likely to occur. Further, since at least a part of the guard electrode and / or the ground electrode is made of a conductive ceramic, the ceramic substrate is unlikely to be damaged due to a difference in thermal expansion between these electrodes and the surrounding ceramic.
Even when the temperature rises to a high temperature of 00 ° C. or higher, it is possible to obtain a wafer prober in which the conductivity of the electrode is less likely to change due to the reaction between the surrounding ceramic and the guard electrode and the like. Further, the wafer prober of the present invention does not warp even when the probe card is pressed, prevents breakage of the wafer and measurement errors, and has excellent temperature rising and falling characteristics.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view schematically showing an example of a wafer prober of the present invention, and FIG. 1B is a partially enlarged cross-sectional view thereof.

FIG. 2 is a plan view of the wafer prober shown in FIG.

FIG. 3 is a bottom view of the wafer prober shown in FIG. 1;

FIG. 4 is a sectional view taken along line AA of the wafer prober shown in FIG. 1;

FIG. 5 is a cross-sectional view schematically showing one example of a wafer prober of the present invention.

FIG. 6 is a cross-sectional view schematically showing one example of a wafer prober of the present invention.

FIG. 7 is a cross-sectional view schematically showing one example of a wafer prober of the present invention.

FIG. 8 is a cross-sectional view schematically showing one example of a wafer prober of the present invention.

FIG. 9 is a cross-sectional view schematically showing a case where the wafer prober of the present invention is combined with a support.

FIG. 10A is a longitudinal sectional view schematically showing a case where the wafer prober of the present invention is combined with another support table, and FIG. 10B is a sectional view taken along the line BB.

FIGS. 11A to 11D are cross-sectional views schematically showing a part of the manufacturing process of the wafer prober of the present invention.

FIGS. 12E to 12G are cross-sectional views schematically showing a part of the manufacturing process of the wafer prober of the present invention.

FIG. 13 is a cross-sectional view schematically showing a state in which a continuity test is performed using the wafer prober of the present invention.

FIG. 14 is a cross-sectional view schematically showing a conventional wafer prober.

[Description of Signs] 101, 201, 301, 401, 501 Wafer prober 2, 72 Chuck top conductor layer 3, 73 Ceramic substrate 5, 75 Guard electrode 6, 76 Ground electrode 5a, 6a Surface electrode layer 5b, 6b Internal electrode layer 7 Groove 8, 78 Suction hole 10 Insulation material 11 Support base 12 Refrigerant outlet 13 Suction port 14 Refrigerant inlet 15 Support post 16, 17, 18, 87 Through hole 180 Bag hole 19, 190, 191 External terminal pins 41, 42 , 71 Heating element 410 Protective layer 43 Metal wire 44 Peltier element 440 Thermoelectric element 441 Ceramic substrate 51 Conductive layer 52 Conductive layer non-formed portion

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 3/46 G01R 31/28 K

Claims (8)

[Claims] 1. A wafer prober having a chuck top conductor layer formed on a surface of a ceramic substrate and a guard electrode and / or a ground electrode disposed on the ceramic substrate, wherein the guard electrode and / or the ground electrode are provided. A wafer prober, wherein at least a part of the electrode is made of a conductive sintered body. 2. The wafer prober according to claim 1, wherein only the surface of said guard electrode and / or said ground electrode is made of conductive ceramic. 3. The wafer prober according to claim 1, wherein all of said guard electrode and / or said ground electrode are made of conductive ceramic. 4. The wafer prober according to claim 1, wherein said guard electrode and / or said ground electrode is formed of a high melting point metal. 5. A ceramic substrate on which a chuck top conductor layer is formed and a guard electrode and / or a ground electrode are provided, wherein at least a part of the guard electrode and / or the ground electrode is provided. A ceramic substrate used for a wafer prober, comprising a conductive sintered body. 6. The ceramic substrate used in a wafer prober according to claim 5, wherein only the surface of said guard electrode and / or said ground electrode is made of conductive ceramic. 7. The ceramic substrate used in a wafer prober according to claim 5, wherein all of said guard electrode and / or said ground electrode are made of conductive ceramic. 8. The ceramic substrate used in a wafer prober according to claim 5, wherein said guard electrode and / or said ground electrode is formed of a high melting point metal.