JP2001257196A - Ceramic substrate for semiconductor manufacturing and checking device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic substrate for a semiconductor manufacturing and checking device which hardly generates degradation caused by oxidation and has no dropout of a conductor wire or no variation of a resistance value even if used at a high temperature of >=200 deg.C. SOLUTION: A conductor made of one or two circuit(s) is formed on a surface or inside a ceramic substrate for a semiconductor manufacturing and checking device. The ceramic substrate for a semiconductor manufacturing and checking device has features of the conductor being electrically connected with a conductor wire and a part at least of the connecting portion and the conductor wire being covered with non-oxide metal.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate used as a device for manufacturing or inspecting a semiconductor, such as a hot plate (ceramic heater), an electrostatic chuck, and a wafer prober.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing / inspection apparatus including an etching apparatus and a chemical vapor deposition apparatus, a heater or a wafer prober using a metal base material such as stainless steel or an aluminum alloy is used. I have been.

[0003] However, such a metal heater has the following problems.
There were the following problems. First, because it is made of metal,
The thickness of the heater plate must be as thick as about 15 mm. This is because, in a thin metal plate, warping, distortion, and the like are generated due to thermal expansion caused by heating, and the silicon wafer placed on the metal plate is damaged or tilted. However, when the thickness of the heater plate is increased, there is a problem that the weight of the heater increases and the heater becomes bulky.

[0004] The heating temperature is controlled by changing the voltage or the amount of current applied to the resistance heating element.
Since the metal plate is thick, there is a problem that the temperature of the heater plate does not quickly follow a change in voltage or current amount, and it is difficult to control the temperature.

In Japanese Patent Application Laid-Open No. Hei 4-324276, aluminum nitride, which is a non-oxide ceramic having high thermal conductivity and high strength, is used as a substrate. Ceramic heaters have been proposed in which through holes are formed, and dichrome wires are brazed as external terminals to these through holes.

Further, as another ceramic heater, a blind hole is provided in the bottom surface of the ceramic substrate, and an external terminal is inserted into the blind hole so as to be connected to a resistance heating element provided inside the ceramic substrate. A configured ceramic heater is also disclosed. FIG. 11 is a cross-sectional view schematically showing a ceramic heater having such a configuration, in which a circuit including a resistance heating element 42 is provided inside a ceramic substrate 41 and an end thereof is connected to the resistance heating element 42. A through hole 48 is provided.

Then, on the bottom surface of the ceramic substrate 41,
A blind hole 47 is provided so as to expose the through hole 48, and an external terminal 43 having a T-shaped cross section is inserted into the blind hole 47 and is joined to the through hole 48 by gold brazing or the like. The metal layer 46 around the blind hole 47 is formed to support the external terminal 43 via a brazing material and to make the connection with the through hole 48 more reliable.

[0008]

However, by energizing the ceramic heater 40 having the above configuration,
When heat is generated at a high temperature of 0 ° C. or more, the thermal expansion coefficient of the external terminal 43 is larger than the thermal expansion coefficient of the ceramic substrate 41. A large stress acts on the substrate 41,
There is a problem that cracks occur in the ceramic substrate 41. Further, the external terminals 43 may fall off due to such a difference in the coefficient of thermal expansion.

Therefore, in order to solve these problems,
The present inventors previously formed a blind hole 27 on the bottom surface of a ceramic substrate as shown in FIG.
(Washer) is inserted, and connection with the end of the circuit including the resistance heating element 12 is established through the through hole 38.
A ceramic substrate for a semiconductor manufacturing / inspection device having a new configuration in which the conductive wire 13 is inserted into and connected to the center hole of the washer 24 has been developed.

In the ceramic substrate for a semiconductor manufacturing / inspection apparatus having such a configuration, a washer 24 serving as a buffer between the ceramic substrate 11 and the conductive wire 13 is inserted and connected inside the blind hole 27. 20
Even if the conductive wire 13 expands when used at a high temperature of 0 ° C. or more,
A large stress does not directly act on the ceramic substrate 11, cracks and the like hardly occur on the ceramic substrate 11, and the conductive wires 13 do not fall off. In other words, it has become possible to provide a ceramic substrate for a semiconductor manufacturing / inspection apparatus having excellent connection reliability between the ceramic substrate and an external power supply.

However, in this ceramic substrate for a semiconductor manufacturing / inspection apparatus, since a part of the washer 24 is exposed in an oxidizing atmosphere such as the air or air, if the heating and use are performed for a long time, the exposed portion is oxidized. As a result, cracks and the like may occur in the exposed portion, and there is still room for improvement.

[0012] Based on such viewpoints, the present inventors have
The purpose is to develop a ceramic substrate for semiconductor manufacturing and inspection equipment that does not cause cracks in the ceramic substrate or cushioning material (washer) even when the ceramic substrate for semiconductor manufacturing and inspection equipment is used at a high temperature of 200 ° C. or more for a long time. As a result of intensive studies, by covering the buffer material such as the conductive wire or washer with a non-oxidizing metal layer, even under a high-temperature oxidizing atmosphere, the conductive material connected to the washer or the washer It was found that the wire was not oxidized, leading to the completion of the present invention. Even when there is no cushioning material such as a washer, by coating with a non-oxidizing metal layer, the electrical connection between the conductive wire and the circuit formed on the surface or inside of the ceramic substrate can be made even in a high-temperature oxidizing atmosphere. The present inventors have found that it can be secured, and have completed the present invention.

[0013]

That is, a ceramic substrate for a semiconductor manufacturing / inspection apparatus according to the present invention is a semiconductor manufacturing / inspection apparatus in which a conductor composed of one or more circuits is formed on or in the surface of a ceramic substrate. In the ceramic substrate for an inspection apparatus, a conductive line is electrically connected to the conductor, and at least a part of the connection portion and the conductive line are coated with a non-oxidizing metal.

In the present invention, the connection portions covered with the non-oxidizing metal are as follows. 1) When the conductor is formed on the surface of the ceramic substrate, a connection portion between the conductor and the conductive wire (see FIG. 13). 2) When the conductor is formed inside the ceramic substrate, a portion where a conductive wire electrically connected to the conductor is drawn from the ceramic substrate (see FIG. 2A).

The ceramic substrate for a semiconductor manufacturing / inspection apparatus according to the present invention is a ceramic substrate for a semiconductor manufacturing / inspection apparatus, wherein a conductor comprising one or more circuits is formed on or in the surface of the ceramic substrate. A buffer material is formed on the bottom surface of the ceramic substrate, a conductive wire is connected to the buffer material, and the conductive wire is electrically connected to the conductor, and at least a part of the buffer material and the conductive wire May be configured to be coated with a non-oxidizing metal. In these ceramic substrates, the connection portion may be covered with an insulator.

Further, the ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention is provided on the surface or inside of the ceramic substrate.
In a ceramic substrate for a semiconductor manufacturing / inspection apparatus in which a conductor composed of one or more circuits is formed, a conductive wire is electrically connected to the conductor, and at least a part of the connection part and the conductive wire includes: Coated with a non-oxidizing metal,
Further, it may be a configuration characterized by being coated with an insulator, a buffer material is formed on the bottom surface of the ceramic substrate, and a conductive wire is connected to the buffer material,
The conductive wire is electrically connected to the conductor, and at least a part of the buffer material and the conductive wire is covered with a non-oxidizing metal and further covered with an insulator. You may.

Preferably, the insulator is coated with a noble metal paste. This is because when the insulator is porous, it is possible to prevent air from diffusing and entering. The non-oxidizable metal is preferably nickel, and most preferably, nickel containing B.

The cushioning material is conductive, and a through hole is interposed between the conductive cushioning material and an end of the circuit.
It is desirable that an end of the circuit and the conductive buffer be connected through the through hole. In addition,
The conductive wire according to the present invention includes not only a deformable linear body such as a lead wire but also a conductive wire such as a pin that is difficult to deform.

Further, as the non-oxidizing metal, gold, silver,
Precious metals such as platinum and palladium, nickel and the like can be used. The conductor in the present invention may be an electrode of an electrostatic chuck, a guard electrode of a wafer prober, or a ground electrode, in addition to the resistance heating element.

Further, in the ceramic substrate for a semiconductor manufacturing / inspection apparatus, it is preferable that the buffer material (washer) is connected to an end of the circuit by brazing.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION A ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention (hereinafter, also simply referred to as a “ceramic substrate for a semiconductor device”) is provided on the surface or inside of the ceramic substrate.
In a ceramic substrate for a semiconductor device on which a conductor composed of one or more circuits is formed, a conductive line is electrically connected to the conductor, and at least a part of the connection portion and the conductive line are non-oxidizing. A ceramic substrate for a semiconductor device, which is coated with a metal; and a ceramic substrate for a semiconductor device, wherein a conductor made of one or more circuits is formed on or in the surface of the ceramic substrate. A buffer material is formed on the bottom surface of the ceramic substrate, and a conductive wire is connected to the buffer material, and the conductive wire is electrically connected to the conductor,
At least a part of the buffer material and the conductive wire is a ceramic substrate for a semiconductor device, which is coated with a non-oxidizing metal. Hereinafter, the cushioning material will be described as a washer.

The exposed portion of the washer and the conductive wire portion near the washer are easily oxidized when the temperature of the ceramic substrate is higher than 200 ° C., and when the washer or the conductive wire is oxidized, a current flows through the resistance heating element. There is a possibility that the conductive wire will not flow or deteriorate and the conductive wire will fall off.

However, in the present invention, since the washer and the conductive wire are covered with the non-oxidizing metal, no current stops flowing and the conductive wire does not fall off.
Even when there is no cushioning material (washer), when the conductor is formed on the surface of the ceramic substrate, the connecting portion between the conductor and the conductive wire is covered with a non-oxidizing metal. Further, when the conductive line is formed inside the ceramic substrate, a portion where the conductive line electrically connected to the conductor is drawn out of the ceramic substrate, and at least a part of the conductive line are non-oxidizing. Cover with metal. Therefore, according to the present invention, the resistance heating element, the conductive wire or the brazing material can be prevented from being oxidized, and the conductive wire can be prevented from falling off due to oxidative deterioration.

The non-oxidizing metal layer is preferably a nickel layer, and most preferably a Ni-B plating layer. This plating layer is denser, less oxidized, and hardly swells as compared with the Ni plating layer containing P and other elements other than B. Therefore, in an oxidizing atmosphere such as air or air,
Even at a high temperature of 200 ° C. or higher, internal washers and conductive wires are not easily oxidized. As a result, even if the current is applied for a long time, the current does not stop or the conductive wire does not fall off, and the ceramic substrate for a semiconductor device of the present invention is
It will be excellent in durability.

In the present invention, the non-oxidizing metal and the conductive wire may be covered with an insulator. This is because the non-oxidizing metal layer itself can be prevented from being oxidized. The insulator is
A gel material obtained by curing silica sol or alumina sol, or a resin such as a polyimide resin or an epoxy resin can be used. In addition, a noble metal paste can be applied to the surface of the insulator. The gel-like body is porous and can completely prevent the invasion of oxygen by applying a noble metal paste to the surface. Gold, noble metal paste
Silver, palladium and platinum pastes are preferred.

Hereinafter, a ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention will be described with reference to the drawings.

FIG. 1A is a bottom view schematically showing an example of a ceramic heater (hereinafter also referred to as a hot plate) which is an embodiment of the ceramic substrate for a semiconductor device of the present invention, and FIG. FIG. 3 is a partially enlarged cross-sectional view showing a part of the ceramic heater shown in FIG.

The ceramic substrate 11 is formed in a disk shape, and the resistance heating element 12 is
Are formed in a concentric pattern inside. The resistance heating elements 12 are connected such that double concentric circles close to each other form a single line as a set of circuits, and the bottom surface of the ceramic substrate 11 is exposed so that both ends of the circuit are exposed. A bag hole 27 is formed in 11b. A washer 24 is fitted into the blind hole 27, and the conductive wire 13 serving as an input / output terminal is connected via the washer 24. The Ni-B plating layer 17 is formed on the exposed portion of the washer 24 and at least a part of the conductive wire 13.

On the other hand, a through hole 15 for inserting a support pin 16 for supporting a silicon wafer 19 is formed in a portion near the center, and a bottomed hole 14 for inserting a temperature measuring element such as a thermocouple. Are formed. The blind hole 27
Will be described in detail in the description of FIG. Further, parts other than the heater will be described later in detail.

FIG. 2A is a partially enlarged longitudinal sectional view schematically showing the vicinity of a blind hole of the ceramic heater 10, and FIG.
Is a sectional view taken along the line AA. As shown in (a), a washer 24 is fitted into the bag hole 27, and the conductive wire 13 is inserted into a center hole of the washer 24. The conductive wire 13 is electrically connected to the resistance heating element 12 through the brazing filler metal 25 and the through hole 38 filled in the blind hole 27 or through the washer 24, the through hole 38 and the brazing filler metal 25. It is connected.

The washer 24 is connected to the metal layer 26, and the metal layer 26 is connected to the through hole 38. The through hole 38 is connected to the resistance heating element 12. The metal layer 26 is formed to increase the connection area between the through hole 38 and the washer 24. Further, a Ni-B plating layer 17 is formed on the exposed portion of the washer 24 and at least a part of the conductive wire 13.

As described above, the Ni-B plating layer 17 is formed on the exposed portion of the washer 24, that is, the portion in contact with the atmosphere (air), because the ceramic substrate 11
This is to prevent oxidation by air or the like when the temperature rises. In order to prevent the conductive wire 13 from being oxidized, it is necessary to form a Ni-B plating layer 17 on at least a portion of the conductive wire 13 where the temperature is considerably increased when the conductive wire 13 is used as a heater. However, the Ni-B plating layer 17 does not necessarily need to be formed in all parts.

In the above description, the Ni-B plating layer is used as the non-oxidizing metal layer. However, if the metal is a non-oxidizing metal, it is not limited to Ni plating, and it is possible to use a noble metal. Yes, gold, silver, platinum, palladium, etc. can also be used. In addition, not limited to plating, a non-oxidizable metal layer can be provided by sputtering or the like.

As shown in FIG. 3B, three cylindrical metal layers 26, each of which is partially cut away, are formed inside the ceramic substrate. The metal layer 26 is provided to support the washer 24 from three directions and to reliably connect the washer 24 to the resistance heating element 12 as described above, but is not necessarily an essential member. .

The composition of the Ni—B plating layer 17 is not particularly limited, but the content of B is preferably 3% by weight or less, and particularly preferably less than 1% by weight. By forming a plating layer containing a small amount of B, a dense plating layer is formed, and this plating layer is not only excellent in oxidation resistance, but also hardly generates blisters. The inner washer 24 and the conductive wire 13 are not easily oxidized. In particular, Ni- containing less than 1% by weight of B
The B plating layer 17 is excellent in the above characteristics.

The thickness of the Ni—B plating layer 17 is 1 to 15
μm is preferred. The thickness of the Ni-B plating layer 17 is 1 μm
When the thickness is less than 10 mm, the internal washer 24 and the like are easily oxidized, while the thickness of the Ni-B plating layer 17 is reduced to 15 μm.
It is not easy to set the value to a value exceeding 5 mm, and the effect of preventing oxidation of the internal members is not much different from the case of about 5 μm.
Not economic.

The Ni-B plating layer 17 is formed by immersing a ceramic substrate in which the washer 24 and the conductive wire 13 are disposed inside the blind hole 27 in a Ni plating bath and performing electroless Ni plating.

At this time, a Ni plating bath containing a nickel compound, a reducing agent, a buffer and the like is used. The nickel compound is not particularly limited, and examples thereof include nickel sulfate, nickel chloride, and nickel carbonate. The reducing material is not particularly limited, and examples thereof include boric acid. The buffer is not particularly limited, and examples thereof include sodium formate and sodium acetate.

The material of the conductive wire 13 is not particularly limited as long as it has a low volume resistivity used for ordinary wiring, and examples thereof include Kovar, copper, aluminum and nickel. Among them, Kovar and nickel, which are excellent in oxidation resistance at high temperatures and the like, are preferable.

The material of the washer 24 is as follows.
It is preferable that the coefficient of thermal expansion is approximately equal to that of the ceramic substrate, or that the coefficient of thermal expansion is in the middle of the conductive wire.

Although the size of the washer 24 is not particularly limited, it is preferable that the diameter of the washer 24 is substantially the same as the diameter of the blind hole 27 so that the washer 24 can be fitted into the blind hole 27 and temporarily fixed.

As the gold solder 25, an Au-Ni alloy having excellent adhesion to tungsten is desirable. The ratio of Au / Ni is [81.5 to 82.5 (% by weight)] / [18.
5 to 17.5 (% by weight)], and the thickness of the Au—Ni layer is preferably 0.1 to 100 μm. This is because the range is sufficient to secure the connection.

Under high vacuum of 10 ^-6 to 10 ^-5 Pa, 500 to
When used at a high temperature of 1000 ° C., the Au—Cu alloy deteriorates, but the Au—Ni alloy is advantageous because such deterioration does not occur over time. The amount of the impurity element in the Au—Ni alloy is desirably less than 1 part by weight when the total amount is 100 parts by weight.

The ceramic heater 10 shown in FIG.
In the above, the connection between the washer 24 and the end of the resistance heating element 12 is performed using a gold solder 25, but the connection may be performed using a silver solder, solder, or the like in some cases.

The resistance heating element 12 may be made of a precious metal (gold, silver, platinum, palladium), a metal such as lead, tungsten, molybdenum or nickel, or a conductive ceramic such as a carbide of tungsten or molybdenum. desirable. This is because the resistance value can be increased, the thickness itself can be increased for the purpose of preventing disconnection, and the like, and it is hard to be oxidized and the thermal conductivity does not easily decrease. These may be used alone or in combination of two or more.

Since the resistance heating element 12 needs to make the temperature of the entire ceramic substrate 11 uniform, FIG.
A concentric pattern as shown in (a), a combination pattern of a concentric shape and a bent line shape, and the like are preferable.
The thickness of the resistance heating element 12 is preferably 1 to 50 μm, and the width thereof is preferably 0.2 to 10 mm.

The resistance value can be changed by changing the thickness and width of the resistance heating element 12, but this range is the most practical. The resistance value of the resistance heating element 12 increases as it becomes thinner and thinner.

The resistance heating element 12 has a rectangular or elliptical cross section.
Any of a spindle shape and a kamaboko shape may be used, but a flat shape is desirable. This is because the flat surface is more likely to radiate heat toward the heating surface, so that the amount of heat transmitted to the heating surface 11a can be increased, and the temperature distribution on the heating surface is less likely to occur. Note that the resistance heating element 12 may be a heating wire having a spiral shape.

The resistance heating element 1 is provided inside the ceramic substrate 11.
In order to form No. 2, it is preferable to use a conductive paste made of metal or conductive ceramic. That is, when forming a resistance heating element inside a ceramic substrate, a conductive paste layer is formed on a green sheet, and then the green sheet is laminated and fired to produce the resistance heating element 12 inside.

The conductive paste is not particularly limited, but preferably contains not only metal particles or conductive ceramics for ensuring conductivity, but also resin, solvent, thickener and the like.

The materials for the metal particles and the conductive ceramic particles include those described above. The particle size of these metal particles or conductive ceramic particles is 0.1 to 10
0 μm is preferred. If it is too fine, less than 0.1 μm, it is liable to be oxidized, while if it exceeds 100 μm, sintering becomes difficult and the resistance value becomes large.

Although the shape of the metal particles is spherical,
It may be scaly. When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes.

When the metal particles are flakes or a mixture of spheres and flakes, the metal oxide between the metal particles can be easily held, and the adhesion between the resistance heating element and the ceramic substrate can be improved. This is advantageous because it can ensure the performance and can increase the resistance value.

As the resin used for the conductor paste,
For example, an epoxy resin, a phenol resin, and the like can be given. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

FIG. 3 is a longitudinal sectional view schematically showing another embodiment of the ceramic heater according to the present invention. In the ceramic substrate for a semiconductor device according to the present invention, as shown in FIG. 3, the conductive wire 13 and the washer 24 covered with the Ni-B plating layer 17 are further covered with silica sol or alumina sol, dried and gelled. 32. It is desirable that the surface of the insulator 32 be further covered with a noble metal paste 33 such as a silver paste.

The diameter of the through hole 38 is 0.1 to 10
mm is desirable. This is because cracks and distortion can be prevented while preventing disconnection.

The ceramic material constituting the ceramic substrate for a semiconductor device of the present invention is not particularly limited.
Nitride ceramics, carbide ceramics, oxide ceramics and the like can be mentioned.

Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride and the like. Further, as the carbide ceramic, metal carbide ceramic,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples include tantalum carbide and tungsten carbide.

Examples of the oxide ceramic include metal oxide ceramics such as alumina, zirconia, cordierite, and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Also, among nitride ceramics, aluminum nitride is most preferred. This is because the thermal conductivity is the highest at 180 W / m · K.

Further, the ceramic material may contain a sintering aid. As the sintering aid, for example,
Examples thereof include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering aids,
_{CaO, Y 2 O 3, Na} 2 O, Li 2 O, Rb 2 O are preferred. Their content is 0.1 to 10% by weight.
Is preferred. Further, it may contain alumina.

The ceramic substrate for a semiconductor device according to the present invention preferably has a brightness of N4 or less as a value based on the provisions of JIS Z 8721. This is because a material having such brightness is excellent in radiant heat and concealing property.
Further, such a ceramic substrate can accurately measure the surface temperature by using a thermoviewer.

Here, the lightness N is defined as 0 for an ideal black lightness, 10 for an ideal white lightness, and the brightness of the color between these black lightness and white lightness. Each color is divided into ten so that the perception of the color is equal, and displayed by symbols N0 to N10. And the actual measurement is N0-N
The comparison is made with the color chart corresponding to No. 10. In this case, the first decimal place is 0 or 5.

The ceramic substrate having such characteristics can be obtained by adding carbon to a ceramic substrate in an amount of 100 to 5000 p.
pm. There are two types of carbon, amorphous and crystalline.Amorphous carbon can suppress a decrease in volume resistivity of a ceramic substrate at a high temperature. Since the decrease in thermal conductivity at high temperatures can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured. The content of carbon is preferably from 200 to 2000 ppm.

As the amorphous carbon, for example, C,
Hydrocarbons consisting solely of H and O, preferably saccharides, can be obtained by baking in air, and graphite powder or the like can be used as crystalline carbon. In addition, carbon can be obtained by thermally decomposing the acrylic resin in an inert atmosphere (nitriding gas, argon gas) and then heating and pressurizing. By changing the acid value of the acrylic resin, The degree of crystallinity (amorphity) can be adjusted.

The ceramic substrate for a semiconductor device of the present invention comprises:
Disc shape, preferably 200 mm or more in diameter, 25
0 mm or more is optimal. This is because a disc-shaped ceramic substrate for a semiconductor device requires uniform temperature, but a substrate having a larger diameter tends to have a non-uniform temperature.

The thickness of the ceramic substrate for a semiconductor device of the present invention is preferably 50 mm or less, more preferably 20 mm or less. Further, 1 to 5 mm is optimal. If the thickness is too small, warpage at a high temperature is apt to occur, and if the thickness is too large, the heat capacity becomes too large and the temperature rise and fall characteristics deteriorate. The porosity of the ceramic substrate for a semiconductor device of the present invention is desirably 0 or 5% or less. This is because a decrease in thermal conductivity at a high temperature and the occurrence of warpage can be suppressed.

In the present invention, a thermocouple can be embedded in a ceramic substrate as needed. The temperature of the resistance heating element is measured with a thermocouple, and the voltage and
This is because the temperature can be controlled by changing the amount of current.

The size of the junction of the thermocouple metal wires is preferably equal to or larger than the diameter of each metal wire and 1.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. For this reason, the temperature controllability is improved and the temperature distribution on the heated surface of the wafer is reduced. Examples of the thermocouple include J
As listed in IS-C-1602 (1980),
K-type, R-type, B-type, E-type, J-type, and T-type thermocouples are exemplified.

The ceramic substrate for a semiconductor device provided with the resistance heating element of the present invention is a ceramic substrate used for manufacturing a semiconductor or inspecting a semiconductor. Specific examples of the device include an electrostatic chuck, Wafer probers, susceptors, hot plates (ceramic heaters) and the like can be mentioned. Each of these ceramic substrates, for example,
A resistance heating element having the configuration described with reference to FIG. 1 is provided.

The above hot plate (ceramic heater)
Is an apparatus in which only a resistance heating element is provided inside a ceramic substrate, whereby an object to be heated such as a semiconductor wafer can be heated to a predetermined temperature.

When an electrostatic electrode is provided inside the ceramic substrate for a semiconductor device of the present invention, it functions as an electrostatic chuck. As the metal constituting the electrostatic electrode, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. Also,
Examples of the conductive ceramic include carbides of tungsten and molybdenum. They are,
They may be used alone or in combination of two or more.

FIG. 4A is a longitudinal sectional view schematically showing an electrostatic chuck, and FIG. 4B is a sectional view taken along line AA of the electrostatic chuck shown in FIG. In this electrostatic chuck 60, chuck positive / negative electrostatic layers 62 and 63 are embedded in a ceramic substrate 61, and a ceramic dielectric film 64 is formed on its electrodes. A resistance heating element 66 is provided inside the ceramic substrate 61 so that the silicon wafer 19 can be heated, and a through hole is provided at an end of the resistance heating element 66.
Although not shown, a blind hole is formed on the bottom surface of the ceramic substrate 61 so that a through hole is exposed.
A washer is fitted into the blind hole, a conductive wire is connected, and a Ni-B plating layer is formed on an exposed portion of the washer and at least a part of the conductive wire. The ceramic substrate 61 may have an R
The F electrode may be embedded.

As shown in (b), the electrostatic chuck 60 is usually formed in a circular shape in plan view, and a semicircular portion 62 shown in (b) is provided inside the ceramic substrate 61.
a positive electrode electrostatic layer 62 composed of a and a comb tooth portion 62b
And the chuck negative electrode electrostatic layer 63, which is also composed of a semicircular portion 63 a and a comb tooth 63 b,
3b so as to cross each other.

The connection between the chuck positive / negative electrostatic layers 62 and 63 and the conductive wire is made by forming a blind hole such that a through hole is exposed, as in the above-described ceramic heater, and fitting a washer into the blind hole. It is desirable to insert the conductive wire into the hole, bond them with a brazing material such as gold brazing, and further form a Ni-B plating layer on the exposed portion of the washer and at least a part of the conductive wire.

When this electrostatic chuck is used, the positive and negative sides of the DC power supply are connected to the chuck positive electrostatic layer 62 and the chuck negative electrostatic layer 63, respectively, and a DC voltage is applied. Thus, the semiconductor wafer placed on the electrostatic chuck is electrostatically attracted.

FIGS. 5 and 6 are horizontal sectional views schematically showing electrostatic electrodes of another electrostatic chuck.
In the electrostatic chuck 70 shown in FIG. 6, a semicircular chuck positive electrode electrostatic layer 72 and a chuck negative electrode electrostatic layer 73 are formed inside a ceramic substrate 71. In the electrostatic chuck 80 shown in FIG. Are formed with chuck positive electrode electrostatic layers 82a and 82b and chuck negative electrode electrostatic layers 83a and 83b each having a shape obtained by dividing a circle into four parts. Further, the two positive electrode electrostatic layers 82a and 82b and the two chuck negative electrode electrostatic layers 83a and 83b are formed to cross each other. In the case of forming an electrode in which a circular electrode or the like is divided, the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector.

When a chuck top conductor layer is provided on the surface of the ceramic substrate for a semiconductor device of the present invention, and a guard electrode and a ground electrode are provided inside, the device functions as a wafer prober.

FIG. 7 is a cross-sectional view schematically showing one embodiment of the wafer prober of the present invention, FIG. 8 is a plan view thereof, and FIG. 9 is a sectional view of the wafer prober shown in FIG. FIG. 4 is a cross-sectional view taken along a line A.

In the wafer prober 101, concentric grooves 8 are formed on the surface of the ceramic substrate 3 having a circular shape in plan view, and a plurality of suction holes 9 for sucking a silicon wafer are formed in a part of the grooves 8. A chuck top conductor layer 2 for connecting to an electrode of a silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 8.

Further, a guard electrode 6 and a ground electrode 7 having a lattice shape as shown in FIG. 9 are provided inside the ceramic substrate 3 for removing stray capacitors and noise. The reason why the rectangular electrode non-formed portion 52 is formed inside the guard electrode 6 is to firmly adhere the ceramic substrates above and below the guard electrode 6.

Further, in order to control the temperature of the silicon wafer inside the ceramic substrate 3, FIG.
A resistance heating element 5 having a concentric shape in plan view as shown in FIG.
1 are provided, and through holes 58 connected to the resistance heating element 51 are formed at both ends of the resistance heating element 51. Although not shown in FIG. 7, similarly to the case of the ceramic heater 10, a blind hole is formed on the bottom surface of the ceramic substrate 3 so that the through hole 58 is exposed, and a washer is provided in this blind hole. The conductive wire is connected, and a Ni-B plating layer is formed on the exposed portion of the washer and at least a part of the conductive wire.

Although not shown, the resistance heating element 51
Similarly, through holes 56 and 57 connected to the guard electrode 6 and the ground electrode 7 are also provided with blind holes, a washer is fitted therein, and a conductive wire is inserted into the center hole of the through hole and connected. It is preferable that a Ni-B plating layer is formed on at least a part of the exposed portion of the washer and the conductive wire.

In the wafer prober having such a configuration, after a silicon wafer 7 having an integrated circuit formed thereon is mounted thereon, a probe card having tester pins is pressed against the silicon wafer, and a voltage is applied while heating and cooling. To conduct a continuity test. FIG. 13 shows an example of a ceramic substrate provided with a resistance heating element 112 on the surface. In the ceramic substrate 100, the resistance heating element 112 has a metal coating layer 113 formed thereon, and the brazing material 11
The conductive wire 115 is fixed via the wire 4, and the connection portion and the conductive wire 115 are covered with the Ni-B plating layer 117.

Next, a method of manufacturing a ceramic heater will be described as an example of a method of manufacturing a ceramic substrate for a semiconductor device according to the present invention. 10A to 10D are cross-sectional views schematically showing a method for manufacturing a ceramic heater having a resistance heating element inside a ceramic substrate.

(1) Step of Producing Ceramic Substrate First, a paste is prepared by mixing ceramic powder with a binder, a solvent, and the like, and a green sheet is produced using the paste. Aluminum nitride or the like can be used as the above-mentioned ceramic powder, and a sintering aid such as yttria may be added as necessary.

The binder is preferably at least one selected from an acrylic binder, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, as the solvent, at least one selected from α-terpineol and glycol is desirable.

The paste obtained by mixing these is formed into a sheet by a doctor blade method to form a green sheet 5.
0 is produced. The thickness of the green sheet 50 is 0.1 to
5 mm is preferred. Next, the obtained green sheet 50
In addition, if necessary, a portion serving as a through hole for inserting a support pin for supporting a silicon wafer, a portion serving as a bottomed hole for embedding a temperature measuring element such as a thermocouple, and a resistance heating element connected to an external conductive material. A portion 380 to be a through hole for connecting to a line is formed. The above processing may be performed after forming a green sheet laminate described later.

When a portion to be the through hole 38 is provided, the paste may be filled with carbon added to the paste. This is because carbon in the green sheet reacts with tungsten or molybdenum filled in the through holes to form carbides thereof.

(2) Step of Printing Conductive Paste on Green Sheet A conductive paste containing a metal paste or a conductive ceramic is printed on the green sheet 50 to form a conductive paste layer 120. These conductive pastes contain metal particles or conductive ceramic particles. The average particle diameter of the metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. If the average particle size is less than 0.1 μm or more than 5 μm, it is difficult to print the conductive paste.

As such a conductive paste, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one kind of binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol And a composition (paste) obtained by mixing 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol.

(3) Green Sheet Laminating Step The green sheet 50 on which the conductive paste prepared in the above step (1) is not printed is replaced with the green sheet on which the conductive paste layer 120 prepared in the above step (2) is formed. 50
(FIG. 10A). At this time, the number of the green sheets 50 stacked on the upper side is made larger than the number of green sheets 50 stacked on the lower side, and the formation position of the resistance heating element 12 is decentered toward the bottom. Specifically, the number of stacked green sheets 50 on the upper side is preferably 20 to 50, and the number of stacked green sheets 50 on the lower side is preferably 5 to 20.

(4) Green Sheet Laminate Firing Step The green sheet laminate is heated and pressed to sinter the green sheet 50 and the conductive paste therein (FIG. 1).
0 (b)). The heating temperature is preferably from 1000 to 2000 ° C., and the pressure is preferably from 100 to 200 kg / cm ² . Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, or the like can be used.

The obtained ceramic substrate 31 is provided with a bottomed hole (not shown) for inserting a temperature measuring element, a blind hole 37 for inserting a washer, and the like (FIG. 10C).
The bottomed hole and the blind hole 37 can be formed by performing blasting such as drilling or sand blasting after surface polishing.

Next, after applying the brazing paste to the inside of the formed bag hole 37 and fitting the washer 24, the conductive wire 13 is inserted into the center hole of the washer 24, and the brazing paste is reflowed. Brazing is performed to connect the resistance heating element 12 and the conductive wire 13 (FIG. 10).
(D)). Note that the heating temperature is preferably from 900 to 1100 ° C.

Further, a Ni—B plating layer (not shown) is formed on the exposed portion of the washer 24 and at least a part of the conductive wire 13, and a thermocouple or the like as a temperature measuring element is formed on the bottomed hole with a heat resistant resin. To form a ceramic heater.

When manufacturing the above ceramic heater, an electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate, and a chuck top conductor layer is provided on the heating surface to form the inside of the ceramic substrate. A wafer prober can be manufactured by providing a guard electrode and a ground electrode on the substrate.

When electrodes are provided inside the ceramic substrate, a conductive paste layer may be formed on the surface of the green sheet as in the case of forming the resistance heating element. When a conductor layer is formed on the surface of the ceramic substrate, a sputtering method or a plating method can be used, and these may be used in combination.

[0099]

The present invention will be described in more detail below. (Example 1) Production of ceramic heater 10 (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), 4 parts by weight of yttria (average particle size: 0.4 μm), acrylic binder 12 Using a paste obtained by mixing 0.5 parts by weight of a dispersant and 53 parts by weight of an alcohol composed of 1-butanol and ethanol, a green sheet having a thickness of 0.47 mm was produced by a doctor blade method. .

(2) Next, the green sheet is heated to 80 ° C.
After drying for 5 hours, a portion to be a through hole 15 for inserting a support pin for supporting a silicon wafer as shown in FIG. 1 was formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, acrylic binder 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A.

Tungsten particles 10 having an average particle diameter of 3 μm
A conductive paste B was prepared by mixing 0 parts by weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant. The conductor paste A was printed on the green sheet 50 by screen printing to form a conductor paste layer for a resistance heating element. The printing pattern was a concentric pattern as shown in FIG. 1, the width of the conductive paste layer was 10 mm, and the thickness thereof was 12 μm.

On the green sheet after the above treatment, 15 green sheets on which no conductive paste is printed are printed on the upper side (heating surface), 10 green sheets on the lower side, 130 ° C., 80 kg / c.
The layers were laminated at a pressure of m ² . In the portion where the metal layer 26 of the green sheet is formed, three circular through holes shown in FIG. 2B are formed so as to be in contact with each other, and filled with the conductive paste B.

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and at 1890 ° C. under a pressure of 150
It was hot-pressed at kg / cm ² for 10 hours to obtain an aluminum nitride plate having a thickness of 3 mm. This was cut into a 230 mm disk to obtain a ceramic substrate 11 having a resistance heating element 12 with a thickness of 6 μm and a width of 10 mm (aspect ratio: 1666). The diameter of the three metal layers 26 was 2.5 mm.

(5) Next, the ceramic substrate 11 obtained in (4) is polished with a diamond grindstone, a mask is placed thereon, and blast processing with glass beads is performed on the surface to form bottomed holes for thermocouples. 14 were provided.

(6) Further, a blind hole 27 having a diameter of 5.2 mm and a depth of 0.5 mm is formed in the center of a portion where three circular metal layers 26 shown in FIG. After fitting a washer 24 made of tungsten into the blind hole 27, the conductive wire 13 is inserted into the center hole of the washer 24, and a Ni-Au alloy (Au: 82% by weight, Ni: 18) is used.
(% By weight) and heated and reflowed at 1030 ° C. to form a conductive wire 13 made of nickel into a resistance heating element 12.
Connected to the end of

(7) Next, the washer 24 and the metal layer 26
3 μm in the thickness of the exposed portion and at least a portion of the conductive wire 13.
m-Ni-B plating layer 17 was formed by electroless plating. The composition of the Ni-B plating bath was nickel sulfate 8
0 g / l, boric acid 8 g / l, sodium acetate 12 g /
1 and ammonium chloride 6 g / l, and the temperature of the plating bath during the plating was 60 ° C. Thereafter, a plurality of thermocouples for temperature control were embedded in the bottomed holes, and the manufacture of the ceramic heater 10 was completed.

(Example 2) A through hole for a through hole was formed in a ceramic heater green sheet, a conductive paste B was filled in, and a green sheet 50 on which a conductive paste layer 380 for a resistance heating element was formed was provided with a conductor. Except that 15 green sheets 50 on which no paste is printed are laminated on the upper side (heating surface) and 10 on the lower side and fired.
A ceramic heater 30 was manufactured in the same manner as in Example 1.

Comparative Example 1 A ceramic heater was manufactured in the same manner as in Example 1 except that the Ni—B plating layer was not formed.

Example 3 When performing electroless Ni plating,
Nickel sulfate 80 g / l, sodium hypophosphite 12 g
/ L, sodium acetate 12g / l, boric acid 8g / l, and an electroless plating bath consisting of ammonium chloride 6g / l, except that a ceramic heater was manufactured in the same manner as in Example 1.

The ceramic heaters obtained in Examples 1 to 3 and Comparative Example 1 were energized to raise the temperature to 450 ° C., and then held at that temperature for 1000 hours to check whether or not the conductive wires had fallen. Was. As a result, in Examples 1 to 3, the conductive wires did not fall off. On the other hand, in Comparative Example 1, dropping occurred at 5 places out of 10 conductive wires. Further, in Example 3, although there was no dropout, the resistance value between the resistance heating element and the conductive wire was increased by about 5%. When observing the Ni plating layer with a microscope, the plating film is not very dense,
It is considered that air was in contact with a washer or the like through the opening and was oxidized because of the presence of the opening.

Example 4 Production of Wafer Probe (See FIGS. 7 to 9) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttria (average particle size: 0.1 μm)
4 μm) 4 parts by weight, acrylic binder 11.5 parts by weight,
A composition obtained by mixing 0.5 part by weight of a dispersant and 53 parts by weight of alcohol composed of 1-butanol and ethanol,
The green sheet was formed by a doctor blade method to obtain a green sheet having a thickness of 0.47 mm.

(2) After drying the green sheet at 80 ° C. for 5 hours, a through hole for a through hole for connecting the heating element and the conductive wire was formed by punching. (3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, α-
A conductive paste A was prepared by mixing 3.5 parts by weight of a terpineol solvent and 0.3 parts by weight of a dispersant.

Further, 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, α
-Conductive paste B was prepared by mixing 3.7 parts by weight of a terpineol solvent and 0.2 parts by weight of a dispersant.

Next, a grid-shaped printed body for a guard electrode and a printed body for a ground electrode were printed on the green sheet by screen printing using the conductive paste A. further,
The heating element was printed as a concentric pattern as shown in FIG.

Further, a conductive paste B was filled in a through hole for a through hole for connecting to a conductive line. further,
A stack of 50 printed and unprinted green sheets is laminated at 130 ° C. and 80 kg / c.
The layers were integrated under a pressure of m ² to produce a laminate.

(4) Next, this laminate is placed in nitrogen gas for 6 hours.
Degreasing at 00 ° C for 5 hours, 1890 ° C, pressure 150kg /
Hot pressing was performed for 3 hours at ² cm ² to obtain a 3 mm-thick aluminum nitride plate. This was cut into a circular shape having a diameter of 230 mm to obtain a ceramic plate. The size of the through hole was 2.0 mm in diameter and 3.0 mm in depth.
Further, the thickness of the guard electrode 6 and the ground electrode 7 is 6 μm,
The formation position of the guard electrode 6 is 0.7 m from the wafer mounting surface.
m, the formation position of the ground electrode 7 was 1.4 mm from the wafer mounting surface, and the formation position of the heating element was 2.8 mm from the wafer mounting surface.

(5) The plate obtained in the above (4) is polished with a diamond grindstone, a mask is placed on the plate, and a bottomed hole for a thermocouple and a silicon wafer are formed on the surface by blasting with SiC or the like. Groove 7 for suction (width 0.5 mm, depth 0.
5 mm).

(6) Titanium, molybdenum and nickel layers were formed on the surface where the grooves 7 were formed by sputtering. As a device for sputtering, SV-4540 manufactured by Japan Vacuum Engineering Co., Ltd. was used. Sputtering conditions were an atmospheric pressure of 0.6 Pa, a temperature of 100 ° C., and a power of 200 W. The sputtering time was adjusted from 30 seconds to 1 minute for each metal. The obtained film was 0.5 μm for titanium, 4 μm for molybdenum, and 1.5 μm for nickel from the image of the X-ray fluorescence spectrometer.

(7) Nickel sulfate 30 g / l, boric acid 3
The ceramic plate 3 obtained in (6) is immersed in an electroless nickel plating bath comprising an aqueous solution containing 0 g / l, ammonium chloride 30 g / l, and Rochelle salt 60 g / l, and the surface of the metal layer formed by sputtering. 7μ thick
A nickel layer having a content of m and boron of 1% by weight or less was deposited and annealed at 120 ° C. for 3 hours.

Further, 2 g of potassium potassium cyanide /
1, 75 g / l ammonium chloride, 50 g / l sodium citrate, and 10 g / l sodium hypophosphite for 1 minute at 93 ° C. in an electroless gold plating solution to give a thickness of 1 μm on the nickel plating layer. Was formed.

(8) Next, the suction hole 9 which passes through the groove 8 to the back surface is drilled and drilled.
Bag holes (not shown) for exposing 6, 57 and 58 were provided. Then, a tungsten washer is fitted into the blind hole, a nickel conductive wire is inserted into the center hole of the washer, and then a Ni-Au alloy (Au 82 wt%, N
(i18 wt%), and heated and reflowed at 1030 ° C. to connect each wiring.

(9) An Ni-B plating layer having the same composition as that described above was formed on the exposed portion of the washer and at least a part of the conductive wire by electroless plating. The plating solution is nickel sulfate 80 g / l, boric acid 8 g
/ L, sodium acetate 12g / l, ammonium chloride 6
g / l, and the temperature of the plating solution was 60 ° C. Thereafter, a plurality of thermocouples were buried in the recesses for temperature control, and a wafer prober heater 101 was obtained.

The obtained wafer prober 101 was energized to raise the temperature to 450 ° C., and then held for 1000 hours.
The presence or absence of the conductive wire was examined. The working temperature of the wafer prober is 150 to 200 ° C., but when a defect such as a dropout of a thermocouple occurs, the temperature may be excessively increased,
It is necessary that the wafer prober is not broken even under such severe conditions. Therefore, in this test, the resistance of the wafer prober in the abnormal state itself was tested by setting the temperature higher than the normal use temperature. This 450 ° C,
In the holding test for 1000 hours, no drop of the conductive wire was observed.

(Example 5) Application example, ceramic heater having resistance heating element and electrostatic electrode for electrostatic chuck inside (FIG. 7) (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm) 100 parts by weight, yttria (average particle size:
0.4 μm) 4 parts by weight, 11.5 parts by weight of acrylic binder, 0.5 parts by weight of dispersant, 0.2 parts by weight of sucrose, 0.05 parts by weight of graphite and 53 parts by weight of alcohol composed of 1-butanol and ethanol Using the paste in which the parts were mixed, molding was performed by a doctor blade method to obtain a green sheet having a thickness of 0.47 mm.

(2) Next, the green sheet is heated to 80 ° C.
After drying for 5 hours, punch 1.8m in diameter
A portion serving as a through hole for inserting a semiconductor wafer support pin having a length of 3.0 mm and 5.0 mm, and a portion serving as a through hole for connecting to an external terminal were provided.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, acrylic binder 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A. A conductive paste B was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant. This conductive paste A
Was printed on a green sheet by screen printing to form a conductor paste layer. The printing pattern was a concentric pattern. Further, a conductor paste layer composed of an electrostatic electrode pattern having the shape shown in FIG. 7 was formed on another green sheet.

Further, a conductive paste B was filled in a through hole for a through hole for connecting an external terminal. On the green sheet after the above processing, a green sheet on which the conductive paste is not printed is further placed on the upper side (heated surface).
13 sheets were stacked on the lower side at 130 ° C. under a pressure of 80 kg / cm ² .

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and at 1890 ° C. under a pressure of 150
It was hot-pressed at kg / cm ² for 3 hours to obtain an aluminum nitride plate having a thickness of 3 mm. This was cut into a 230 mm disk to obtain a ceramic plate having a 6 μm thick, 10 mm wide resistive heating element and electrostatic electrodes inside.

(5) Next, the plate obtained in (4) is
After polishing with a diamond grindstone, a mask is placed and Si
A bottomed hole (diameter: 1.2 mm, depth: 2.0 mm) for a thermocouple was provided on the surface by blasting treatment with C or the like.

(6) Further, a blind hole is formed on the bottom surface to expose a through hole, a tungsten washer is fitted into the blind hole, and a nickel conductive wire is inserted into the center hole of the blind hole, and Ni is inserted. -Au (Au 82 wt%, Ni18w
(t%), and the conductive wire was connected to the resistance heating element by reflow at 1030 ° C.

(7) Next, gold was sputtered on the exposed portion of the washer and the conductive wire. When performing gold sputtering, SV-4540 manufactured by Nippon Vacuum Engineering Co., Ltd. was used. The sputtering was performed at a pressure of 0.6 Pa, a temperature of 150 ° C., and a power of 200 W for 2 minutes.

Electric current was applied to the obtained electrostatic chuck, and 4
After the temperature was raised to 50 ° C., the presence or absence of dropping of the conductive wire was examined. As a result, no drop of the conductive wire was observed even after holding at 450 ° C. for 1000 hours.

[0134]

As described above, according to the ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention, at least a part of the connection portion and the conductive wire are coated with a non-oxidizing metal, and the cushioning material is provided. In this case, at least a part of the buffer material and the conductive wire is covered with the non-oxidizing metal, so that deterioration due to oxidation hardly occurs, and the conductive wire does not fall off and the resistance value does not fluctuate.

[Brief description of the drawings]

FIG. 1A is a bottom view schematically showing a ceramic heater which is an example of a ceramic substrate for a semiconductor device of the present invention, and FIG. 1B is a partially enlarged longitudinal section of the ceramic heater shown in FIG. FIG.

FIG. 2A is a partially enlarged longitudinal sectional view schematically showing the vicinity of a blind hole of the ceramic heater, and FIG. 2B is a sectional view taken along line AA.

FIG. 3 is a partially enlarged longitudinal sectional view schematically showing another embodiment of the ceramic heater according to the present invention.

4A is a longitudinal sectional view schematically showing an electrostatic chuck, and FIG. 4B is a sectional view of the electrostatic chuck shown in FIG.
FIG. 4 is a cross-sectional view taken along a line A.

FIG. 5 is a horizontal sectional view schematically showing another example of an electrostatic electrode embedded in an electrostatic chuck which is an example of the ceramic substrate for a semiconductor device of the present invention.

FIG. 6 is a horizontal sectional view schematically showing still another example of the electrostatic electrode embedded in the electrostatic chuck.

FIG. 7 is a cross-sectional view schematically showing a wafer prober which is an example of a ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention.

8 is a plan view schematically showing the wafer prober shown in FIG.

FIG. 9 is a sectional view taken along line AA of the wafer prober shown in FIG. 7;

FIGS. 10A to 10D are cross-sectional views schematically showing a method of manufacturing a ceramic heater as an example of the ceramic substrate for a semiconductor device according to the present invention.

FIG. 11 is a partially enlarged longitudinal sectional view schematically showing a conventional ceramic substrate for a semiconductor device.

FIG. 12A is a bottom view schematically showing a ceramic heater which is an example of a ceramic substrate for a semiconductor manufacturing / inspection device developed prior to the present invention, and FIG.
It is the elements on larger scale longitudinal sectional view of the ceramic heater shown to (a).

FIG. 13 is a cross-sectional view showing an example of a ceramic substrate having a surface provided with a resistance heating element.

[Explanation of symbols]

3, 11, 31, 41, 61, 71, 81, 100 Ceramic substrate 6 Guard electrode 7 Ground electrode 8 Groove 9 Suction hole 10, 30, 40 Ceramic heater 11a Heating surface 11b Bottom surface 12, 42, 51, 66, 112 Resistance Heating element 13, 115 Conductive wire 14 Bottomed hole 15 Through hole 16 Support pin 17, 117 Ni-B plating layer 19 Silicon wafer 24 Washer 25, 35 Gold solder 26, 36 Metal layer 27, 37 Bag hole 38, 56, 57 , 58 through hole 60, 70, 80 electrostatic chuck 62, 72, 82a, 82b chuck positive electrode electrostatic layer 63, 73, 83a, 83b chuck negative electrode electrostatic layer 62a, 63a semicircular portion 62b, 63b comb tooth portion 64 Ceramic dielectric film 113 Coating layer 114 Brazing material

Continued on front page F-term (reference) 3K034 AA02 AA08 AA16 AA21 AA22 AA34 BB06 BB14 BC04 BC12 BC16 BC17 BC24 CA02 CA15 CA21 CA26 CA34 CA39 DA04 EA05 EA07 HA01 HA10 JA01 JA02 3K092 PP20 QA05 QB02 QB17 QB18 QC75 RFB QC RF13 RF17 RF22 RF26 RF27 TT09 TT21 UA05 UA17 UA18 VV09 VV31 4M106 AA01 BA01 DD23 DJ01 5F004 BB22 BB29

Claims (8)

[Claims] 1. A ceramic substrate for a semiconductor manufacturing / inspection apparatus having a conductor formed of one or more circuits formed on or in a surface of a ceramic substrate, wherein a conductor is electrically connected to the conductor. A ceramic substrate for a semiconductor manufacturing / inspection apparatus, wherein at least a part of a connection part and a conductive line are coated with a non-oxidizing metal. 2. A ceramic substrate for a semiconductor manufacturing / inspection apparatus having a conductor formed of one or more circuits formed on or in a surface of a ceramic substrate, wherein a cushioning material is formed on a bottom surface of the ceramic substrate. A conductive line is connected to the buffer material, the conductive line is electrically connected to the conductor, and at least a portion of the buffer material and the conductive line are coated with a non-oxidizing metal. A ceramic substrate for semiconductor manufacturing / inspection equipment, characterized by the following. 3. A ceramic substrate for a semiconductor manufacturing / inspection apparatus having a conductor formed of one or more circuits formed on or in a surface of a ceramic substrate, wherein a conductive wire is electrically connected to the conductor. A ceramic substrate for a semiconductor manufacturing / inspection apparatus, wherein at least a part of the connection portion and the conductive wire are coated with a non-oxidizing metal and further coated with an insulator. 4. A ceramic substrate for a semiconductor manufacturing / inspection apparatus in which a conductor made of one or more circuits is formed on or in a surface of a ceramic substrate, wherein a cushioning material is formed on a bottom surface of the ceramic substrate. A conductive line is connected to the buffer, and the conductive line is electrically connected to the conductor. At least a portion of the buffer and the conductive line are coated with a non-oxidizing metal, and further insulated. A ceramic substrate for a semiconductor manufacturing / inspection device, characterized by being coated with a body. 5. The ceramic substrate for a semiconductor manufacturing / inspection apparatus according to claim 3, wherein said insulator is coated with a noble metal paste. 6. The ceramic substrate according to claim 1, wherein the non-oxidizable metal is nickel. 7. The ceramic substrate for a semiconductor manufacturing / inspection apparatus according to claim 1, wherein said non-oxidizable metal is nickel containing B. 8. The buffer material is conductive, a through hole is provided at an end of the conductive buffer material and an end of the circuit, and an end of the circuit is connected to the end of the circuit through the through hole. The ceramic substrate for a semiconductor manufacturing / inspection apparatus according to claim 1, wherein the ceramic substrate is connected to a material.