JP3365787B2 - LED chip mounting parts - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode, and more specifically, an LED mounting portion using a light emitting diode used as an LED lamp for display or an optical composite component such as a photocoupler and a photointerrupter.
Regarding goods .

[0002]

2. Description of the Related Art Light emitting diodes (LEDs) are used in various display devices as a light source to replace a tungsten lamp because of their high reliability. As the brightness of the light emitting diodes (LED) increases, they will be replaced by neon signs in the future. It is in the spotlight as being used as an indoor and outdoor display device. High-brightness LEDs have been used for several years since GaAlAs
It is realized as a red LED having a DH (double hetero) structure of the type.

7 (a) and 7 (b) show a top view and a sectional view of a light emitting diode (LED) chip manufactured by a conventional technique. The LED chip 100 shown in the figure is
_{P-Ga 1-y Al y} AsP type cladding layer 102 formed by sequentially grown by epitaxial growth on a GaAs substrate _{101, P-Ga 1-x Al} x AsP type active layer 103, N
-Ga _1-y Al _y AsN type cladding layer 104 has a (x> y).

N-Ga _{1- y} Aly AsN type cladding layer 10
A circular N-side electrode 105 formed of AuGe / Ni by a sputtering method is provided in the center of the upper part of FIG. In GaAs substrate _{101 P-Ga 1-y Al} y
On the surface opposite to the surface on which the AsP-side clad layer 102 is laminated, a P-side electrode 106 formed of Au / Zn similarly by the sputtering method is provided over the entire surface.

This LED chip 100 has one Ga
As substrate 101 on the _{P-Ga 1-y Al y} AsP type cladding layer _{102, P-Ga 1-x} Al x AsP type active layer 103, N
-Ga _1-y Al _y AsN type clad layer 104 (x> y) are successively stacked. Then, the N-Ga _{1- y} Aly AsN-type cladding layer 104 on the front surface side of the LED chip 100 is formed.
An N-side electrode 105 is provided on the top. Then, the P-side electrode 106 is provided on the surface of the GaAs substrate 101 which is the bottom surface side.

Such an LED chip 100 is usually
After the semiconductor layers are sequentially stacked on one large substrate, the N-side electrode 105 is provided for each LED chip 100 and the P-side electrode 106 is provided.
After that, by etching method or dicing processing method,
By dividing into individual chips, an LED chip having a structure as shown in the figure is obtained.

The LED chip 1 manufactured in this way
00 is usually mounted on the circuit board 131 to electrically connect to an external circuit, as shown in FIG.
In the LED chip 100, for example, the P-side electrode 106 is die-bonded to the circuit wiring 127 on the circuit board 131 using, for example, the silver paste 126, and the N-side electrode 105 on the front surface side is a wire 128 formed of gold or the like. Is used to bond to the wire bonding pad 129 on the circuit board 131. In this way, in the LED chip 100 mounted on the circuit board 131, light is emitted in the P-type active layer 103 by applying a voltage to the P-side electrode 106 and the N-side electrode 105, The light is emitted upward from the N-type cladding layer 104.

[0008]

As described above, when the LED chip 100 is mounted on the circuit board 131, the wire 128 used for connecting the circuit wiring 127 on the circuit board 131 and the N-side electrode 105. Diameter is 25-30μ
Since it is extremely fine as m, there is a possibility that the LED chip 100 may be distorted due to stress or the like of the resin provided to cover the entire circuit board 131 to protect the LED chip 100. As a result, the wire 128 may come into contact with the semiconductor layer of the LED chip 100 to cause a short circuit.
It may be damaged and cut due to its distortion.

In addition, the LED chip 100 has an N-side electrode 105 at the center on the N-type cladding layer 104 from which light is emitted.
Therefore, light is not emitted from the surface of the N-type cladding layer 104 provided with the N-side electrode 105.
Further, as the constituent substrate 101 of the LED chip 100, a crystal with a narrow forbidden band is usually used.
Most of the light emitted from the active layer 103 is absorbed in the GaAs substrate 101 forming the chip. As a result, there is a problem that the light emitted from the active layer 103 cannot be efficiently extracted to the outside of the LED chip 100.

[0010] The present invention has been made to solve the drawbacks of the prior art, and its object is emitting da
LED that can efficiently extract light from the ion
To provide mounted components .

[0011]

The LED chip mounting part of the present invention has a flat light emitting surface, and
LED chip using an LED chip that emits light in the vertical direction
The LED chip has a substrate and a P-type and N-type semiconductor layer laminated on the substrate so that the light emitting surface is formed . And a semiconductor layered structure in which the semiconductor layer is an active layer , and the semiconductor layered structure is located on the side opposite to the light emission direction.
An LED chip other than a semiconductor laminated structure including a first electrode provided in the central portion on the surface to be placed and an active layer located on the same side as the surface of the semiconductor layer structure provided with the first electrode.
A second electrode which is provided at a corner of the surface of the LED chip and which has a polarity opposite to that of the first electrode.
Vans formed on the first electrode and the second electrode, respectively.
LED leads to supply voltage to the LED chip.
It is characterized in that it is connected to a frame or a circuit board, whereby the above object is achieved. Further, the LED chip mounted component of the present invention has a flat light emitting surface,
An LED chip that emits light in a direction perpendicular to the light emitting surface.
LED chip mounted product using a LED chip
The substrate, and the light emitting surface is formed on the substrate.
Having a P-type semiconductor layer and an N-type semiconductor layer that are laminated as described above, and one of the semiconductor layers is an active layer , and the emission of the light in the semiconductor lamination structure .
A semiconductor laminated structure including a first electrode provided in a central portion of a surface opposite to the direction and an active layer located on the same side as the surface of the semiconductor laminated structure provided with the first electrode.
Other than the first electrode, the second electrode having a polarity opposite to that of the first electrode , and the LED chip.
Formed on the first electrode and the second electrode, respectively.
Voltage is supplied to the LED chip by the bumps formed.
Connected to a lead frame or a circuit board, and the first electrode and the second electrode are provided so that tension is uniformly applied to the surface of the LED chip provided with these electrodes by the bumps. The above-mentioned object is achieved thereby.

[0012]

[0013]

[0014]

The second electrode is a corner of the LED chip.
It is provided in .

[0016]

[0017]

In the light emitting diode of the present invention, since the P-side and N-side first electrodes and the second electrodes, which have been formed separately on the upper and lower sides of the chip, can be formed on the same plane, By providing Au bumps or the like on the substrate, connection with an external circuit can be performed in a planar manner. Therefore, since the connection using the Au wire or the like which has been used conventionally is unnecessary, the occurrence of defects such as wire cutting is eliminated, and the reliability of the product is improved. Further, by etching the substrate portion and providing a light extraction window, light can be arbitrarily extracted in either direction of the upper surface and the lower surface of the chip. Furthermore, by using a substrate material that is transparent to light with a large forbidden band, it is possible to obtain a surface-mount type light emitting diode with higher light utilization efficiency.

[0018]

EXAMPLES The present invention will be described below with reference to examples. However, the present invention is not limited to these examples.

FIG. 1 (a) is a bottom view (electrode and light emitting surface) of a first embodiment of a light emitting diode (LED) chip of the present invention, and FIG. 1 (b) is a sectional view thereof. The LED chip 10 has a rectangular parallelepiped substrate 11 having a recess 11a having an opening on the bottom surface. The recess 11a is in the form of a groove extending linearly between the opposed end faces of the substrate 11. Recess 11a, each inner surface facing has a slanted trapezoidal section to sequentially close as becomes innermost side, P-Ga _1-y Al into the recess 11a _y A
sP-type clad layer 12, P-Ga _1-x Al _x AsP-type active layer 13, and N-Ga _{1- y} Aly As N-type clad layer 14.
Are sequentially stacked from the inner side. P-Ga _1-y A
l _y AsP type cladding layer 12 is stacked along the inner back surface and the inclined inner surface of the recess 11a, the recess 11a
A groove portion that linearly extends is formed in the central portion so as to have the same cross-sectional shape. The P-Ga _1-x Al _x AsP-type active layer 13 is laminated along the inner surface and the inner surface of the P-Ga _{1- y} Aly AsP-type clad layer 12 in the groove portion thereof, and is linear in the central portion. Is formed with a groove portion. further,
_{N-Ga 1-y Al y} AsN type cladding layer 14 P-Ga
_{The 1-x} Al _x AsP type active layer 13 is laminated in the central groove portion, and its surface is the same as the surface of the substrate 11.

N-Ga _{1- y} Aly As N-type cladding layer 14
A disc-shaped N-side electrode 15 is attached to the central portion of the substrate 11, and the disc-shaped N-side electrode 15 is attached to each corner of the substrate 11 on each side of the recess 11a on the bottom surface of the substrate 11. P-side electrode 16 is provided.

A method of manufacturing the LED chip 10 will be described below step by step. First, the GaAs substrate 11
A part of the bottom surface of the substrate 11 is etched into a mesa shape by using a photolithography method and a selective etching solution, and a groove-shaped recess 11a extending linearly between the opposed end surfaces of the substrate 11 is formed.
To form. The recess 11a has an opening on the bottom surface of the substrate 11, has an inner back surface that is flat, and is formed in a mesa-shaped cross-section that is inclined so that each side surface becomes closer toward the inner back side. . Next, by epitaxial growth from the bottom surface side of the substrate 11 provided with the opening of the recess 11a,
_{P-Ga 1-y Al y} AsP type cladding layer 12, P-Ga
_1-x Al _x AsP type active layer 13, N-Ga _1-y Al _y AsN
The mold clad layer 14 is sequentially formed on the entire substrate 11,
Grow (x> y).

These grown semiconductor layers are removed by ion beam etching or chemical etching until the convex surface of the substrate is exposed, and the semiconductor layers stacked in the concave portion 11a are surrounded by the concave portion 11a of the GaAs substrate 11. Is made flush with the surface 11b. After that, N-Ga _1-y
Each LED is provided in the central portion of the Al _{y As} N-type cladding layer 14.
A disk-shaped N-side electrode 15 made of AuGe / Ni is formed for each chip 10 by a sputtering method. The disk-shaped P-side electrode 16 made of Au / Zn is formed for each LED chip 10 by the same sputtering method. It is desirable that the N-side electrode 15 be formed as small as possible in order to prevent the light emitted from the P-type active layer 13 from passing therethrough, and it has the smallest shape that can be bonded.
In this way, a large number of LEs are formed on one GaAs substrate 11.
After the D chip 10 is formed, finally, the GaAs substrate 11 is divided by a scribing method, dicing, or the like to obtain individual LED chips 10.

N-side electrode 1 of such LED chip 10
5 and a voltage is applied to the P-side electrode 16, P-Ga
Light is generated in the _1-x Al _x AsP type active layer 13. This light is
As indicated by an arrow A in FIG. 1B, the light is emitted from the surface of the semiconductor layer on the bottom surface of the GaAs substrate 11 where the N-side electrode 15 is provided. As described above, since the N-side electrode 15 is provided only in the central portion of the surface of the semiconductor layer from which light is emitted, the light is effectively extracted.

Such an LED chip 10 is, for example,
As shown in FIG. 2, it is mounted on the lead frame 27. N-side electrode 15 and each P-side electrode 16 of the LED chip 10
The bumps 2 made of Au, solder, or the like.
5 is provided, and the bump 25 is connected to the lead frame 27 by heat or ultrasonic pressure bonding using the silver paste 26. The lead frame 27 is
It is configured not to block the light emitted from the connected LED chip 10. Therefore, the LED chip 10
The light emitted from is effectively emitted from between the lead frames 27 as indicated by arrow A.

A second embodiment of the light emitting diode of the present invention is as follows:
This is shown in FIGS. In this embodiment, in the LED chip 10 of the first embodiment shown in FIG. 1, the substrate 11 is formed so that the P-Ga _{1- y} Aly AsP-type clad layer 12 provided inside the recess 11a is exposed. Surface (light emission surface)
The side portion is cut to form the light emitting window 19. In addition, the substrate 1 in the semiconductor layer stacked in the recess 11a
The surface of the No. 1 on the bottom surface (electrode surface) side is covered with the light reflection layer 18 except for the N-side electrode 15. Therefore, light is not emitted from the entire surface of the semiconductor layer exposed from the substrate 11. Light exit window 19
The surface of the portion of the substrate 11 located on each side of is inclined in a direction away from the semiconductor layer.

In the LED chip 10, the LED chips 10 are formed on one substrate in the same manner as in the first embodiment, and thereafter, for example, Al _{2 is} formed by the EB vapor deposition method or the like.
An optical reflection film such as an O ₃ film is formed on the entire bottom surface side of the substrate 11. The reflection film formed on the P-side electrode 16 and the N-side electrode 15 is removed by using the photolithography method and the etching method, and the light reflection layer 18 is formed.

On the surface side of the GaAs substrate 11, a photolithography method and a selective etching solution are used.
The light emission window 19 having a predetermined shape is formed. Finally, the GaAs substrate 11 is formed by etching and dicing.
Is divided into individual LED chips 10 to obtain the LED chip of this embodiment.

N-side electrode 1 of the LED chip 10 of this embodiment
5 and a voltage is applied to the P-side electrode 16, P-Ga
Light is generated from inside the _1-x Al _x AsP type active layer 13. This light is emitted from the light exit window 19 as shown by an arrow B in FIG.
Is emitted from. Since the flat surface of the semiconductor layer 12 stacked in the recess 11a of the substrate 11 is entirely exposed in the light exit window 19, P-Ga _1-x Al _x AsP is formed.
The light generated in the mold active layer 13 can be efficiently emitted.

Such an LED chip 10 is mounted on a circuit wiring board 31 such as a printed board as shown in FIG. Bumps 25 made of Au, solder, or the like are provided on the electrodes 15 and 16 of the LED chip 10, and each bump 25 is formed on the circuit wiring board 31 by heat or ultrasonic pressure bonding using a silver paste 26. It is connected to the wiring. Thus, in the LED chip 10 mounted on the circuit wiring board 31, the active layer 1
The light generated by No. 3 and radiated to the surface side of the circuit wiring board 31 side where the electrodes 15 and 16 are provided is reflected by the light reflection film 18 provided on the chip surface, and is shown by an arrow B. Thus, the light is effectively emitted from the light emission window 19.

A third embodiment of the light emitting diode of the present invention is shown in FIGS. 5 (a) and 5 (b). In the LED chip 20 shown in the present embodiment, as the material of the substrate 21, InP or the like having a large forbidden band width and transparent to light is adopted, and light is emitted from the front surface side of the InP substrate 21. There is.
In the LED chip 20 of the present embodiment, as in the first embodiment, a recess 21a opening to the bottom surface side of the InP substrate 21 is formed, and the P-InP clad layer 22, P- is formed in the recess 21a. InGaAsPP type active layer 23, NI
The nPN type cladding layer 24 is laminated in this order.

N-Ga _{1- y} Aly As N-type cladding layer 14
An N-side electrode 15 is formed at the center of the surface of the
-Ga _1-y Al _y AsN type N in the cladding layer 14 surface
A reflective film 18 is provided around the side electrode 15.
Then, the surface 2 where the recess 21a of the InP substrate 21 opens
Four P-side electrodes 16 are provided at the four corners of 1b.

In the LED chip 20 of this embodiment, since the transparent InP substrate 21 having a large forbidden band is used, the absorption of light in the chip constituent substrate is reduced, and the external quantum efficiency is improved. . Therefore, as shown by an arrow C in FIG. 5B, light is emitted from the front surface side of the InP substrate 21. Light emitted from the P-InGaAsPP type active layer 23 to the bottom surface side of the InP substrate 21 is reflected by the light reflection film 18, so that from the front surface side of the InP substrate 21,
Light is emitted more efficiently.

The LED chip 20 having such a structure is mounted on the circuit wiring board 31, as shown in FIG. LE
The N-side electrode 15 and each P-side electrode 16 of the D chip 20 have bumps 25 formed of Au, solder, or the like.
The bumps 25 are connected to the circuit wiring 28 of the circuit wiring board 31 by heat or ultrasonic pressure bonding using the silver paste 26. In the LED chip 20 mounted on the circuit wiring board 31 in this way, as in the second embodiment, no light is emitted to the side of the circuit wiring board 31, and the light reflected by the light reflection film 18 is indicated by the arrow. As indicated by C, the light is effectively emitted from the surface of the InP substrate 21.

The LED chip of the first embodiment of the present invention may be mounted on a circuit wiring board such as a printed circuit board, or the LED chips of the second and third embodiments may be mounted on a lead frame. Good.

[0035]

The LED chip mounting component of the present invention is provided with a P side and an N side for electrical connection with the outside.
Since the side electrode is formed on the same plane, a bump can be provided at this portion to directly bond it to another circuit. Therefore, since the conventionally used bonding with Au wire or the like is not required, it is not affected by the stress of the resin used for the purpose of protecting the chip, etc., and has high reliability without defects such as wire breakage. Can provide the product of. Further, since it is not necessary to provide the secondary side wire bonding pad on the external wiring circuit which has been conventionally used, the case size can be made compact. Further, by designing the electrode pads so that the tension is evenly applied to the chip surface, it is possible to prevent the Manhattan phenomenon from occurring during die bonding.

In the top emission type chip, by processing the substrate material, which is the light emitting surface on the side opposite to the electrode forming surface, to emit light, the electrode does not exist on the upper surface which is the light emitting surface. Further, since the light reflecting layer is provided on the lower substrate surface, the light utilization efficiency is remarkably improved as compared with the conventional type in which an electrode is formed on the upper surface.

[Brief description of drawings]

FIG. 1A is a bottom view (electrode surface and light emitting surface) showing a first embodiment of a light emitting diode of the present invention, and FIG. 1B is a sectional view thereof.

2 is a cross-sectional view showing a state where the light emitting diode of FIG. 1 is mounted on a lead frame.

3A is a bottom view (electrode surface) view showing a second embodiment of the light emitting diode of the present invention, FIG. 3B is a surface view of the opposite side of the light emitting surface, and FIG. 3C is a cross-sectional view thereof.

FIG. 4 is a sectional view showing a state in which the light emitting diode of FIG. 3 is mounted on a circuit wiring board.

5A is a bottom view showing a third embodiment of the light emitting diode of the present invention, and FIG. 5B is a sectional view thereof.

6 is a cross-sectional view showing a state in which the light emitting diode of FIG. 5 is mounted on a circuit wiring board.

7A is a top view (light emitting surface) showing an embodiment of a conventional light emitting diode, and FIG. 7B is a sectional view thereof.

8 is a sectional view showing a state in which the light emitting diode of FIG. 7 is mounted on a circuit wiring board.

[Explanation of symbols]

10 LED chip 11 GaAs substrate 11a recess 12 P-type cladding layer _{(P-Ga 1-y Al} y As) 13 P -type active layer _{(P-Ga 1-x Al} x As) 14 N -type cladding layer (N-Ga _{1 -y} Al _y As) 15 N-side electrode (AuGe / Ni) 16 P-side electrode (Au / Zn) 18 light-reflecting layer (Al ₂ O ₃₎ 19 light exit window 21 InP substrate 21a recess 21b Gawaenmen 22 P-type Clad layer (P-InP) 23 P-type active layer (P-InGaAsP) 24 N-type clad layer (N-InP) 25 Bump 26 Silver paste 27 Lead frame 28 Circuit wiring 31 Circuit wiring board

Continuation of the front page (56) Reference JP-A-4-10671 (JP, A) JP-A-48-66784 (JP, A) JP-A-51-45987 (JP, A) JP-A-57-192088 (JP , A) JP 55-16415 (JP, A) JP 54-114094 (JP, A) JP 64-84759 (JP, A) JP 5-129638 (JP, A) JP 42-5572 (JP, B1) Special Table HEI 5-500737 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 33/00

Claims (3)

(57) [Claims] 1. A flat light emitting surface having a flat surface facing the light emitting surface.
LE using an LED chip that emits light vertically in the vertical direction
A D-chip mounted product, wherein the LED chip has a substrate and P-type and N-type semiconductor layers laminated on the substrate so that the light emitting surface is formed, and And a semiconductor laminated structure in which the semiconductor layer is an active layer , and a side opposite to the light emission direction in the semiconductor laminated structure .
LE other than the semiconductor laminated structure including a first electrode provided in the central portion on the surface located on the surface and an active layer located on the same side as the surface of the semiconductor layer structure provided with the first electrode.
A second electrode provided on a corner of the D chip surface and having a polarity opposite to that of the first electrode ; and the LED chip on the first electrode and the second electrode.
The bumps formed on the LED chip
An LED chip mounting component, which is connected to a lead frame or a circuit board that supplies a voltage . 2. A flat light emitting surface having a flat surface facing the light emitting surface.
LE using an LED chip that emits light vertically in the vertical direction
A D-chip mounted product, wherein the LED chip has a substrate and P-type and N-type semiconductor layers laminated on the substrate so that the light emitting surface is formed, and And a semiconductor laminated structure in which the semiconductor layer is an active layer , and a side opposite to the light emission direction in the semiconductor laminated structure .
LE other than the semiconductor laminated structure including a first electrode provided in the central portion of the surface located on the side and an active layer located on the same side as the surface of the semiconductor laminated structure provided with the first electrode.
A second electrode provided on the surface of the D chip and having a polarity opposite to that of the first electrode ; and the LED chip on the first electrode and the second electrode.
The bar pump respectively formed, on the LED chip
Connected to a lead frame or circuit board that supplies voltage
The LED is characterized in that the first electrode and the second electrode are provided such that tension is uniformly applied to the surface of the LED chip provided with these electrodes by the bumps. Chip mounted parts. 3. The LED chip mounting component according to claim 2, wherein the second electrode is provided at a corner of the LED chip.