JP2001044502A - Composite light emitting element and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To actualize the structure of a light emitting element, wherein light emitted by an active layer of the light emitting element having an active layer formed of a quaternary compound semiconductor InGaAlP is efficiently taken out, without being absorbed by a GaAs substrate, and its manufacturing method with a good non-defective rate. SOLUTION: A composite light emitting element is composed of a semiconductor light emitting element and a submount element 2, which electrically connects and mounts it in combination therewith. An active layer 8 is formed of InGaAlP and the semiconductor laminate structure has no GaAs included in surfaces up to a main light guide-out surface, and n-side and p-side electrodes 11 and 12 provide in the semiconductor light emitting element 1 are provided on the side of the mount surface on the submount element 2 to secure the light emission area of a main light guide-out surface, thereby increasing the light extraction efficiency.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light emitting device having improved light extraction efficiency, and more particularly to a semiconductor light emitting device using a quaternary compound semiconductor InGaAlP as an active layer and a method of manufacturing the same.

[0002]

2. Description of the Related Art Among various semiconductor light emitting devices formed by laminating a compound semiconductor on a substrate, a semiconductor light emitting device having a quaternary compound semiconductor InGaAlP as an active layer has a high brightness of orange or amber. And a red laser diode. In such a device using InGaAlP as an active layer, high brightness light emission from red to green has already been achieved by using GaAs as a substrate, as compared with a conventional device using GaP, GaAs, or the like.

FIG. 6 shows an example of the structure of a commercialized semiconductor light-emitting device that emits high-brightness orange or amber light. The semiconductor light emitting device 50 is formed by metal organic chemical vapor deposition on an n-type GaAs substrate 51 with an n-type GaAs buffer layer 52 and a superlattice Bragg reflection layer 53 composed of 20 pairs of n-type GaAs and InAlP. , N-type InG
aAlP cladding layer 54 and non-doped InGaAl
P active layer 55 and p-type InGaAlP cladding layer 5
6 and a p-type GaAlAs window layer 58 are sequentially stacked to form a double hetero structure. And n
Au-Ge alloy layer and Au
A p-type GaAs layer 59 is formed on the p-type GaAlAs window layer 58 side so as to correspond to the position where the p-side electrode 60 made of an Au-Zn alloy layer and an Au layer is deposited. To make it easier to take an ohmic.

Here, the cladding layers 54 and 56 sandwiching the non-doped InGaAlP active layer 55 are more A
By increasing the l-mixed crystal ratio, electrons and holes are confined in the active layer 55. The window layer 58 is slightly thick (about several μm) in order to sufficiently spread the current flowing from the p-side electrode 60 and inject the current into the active layer 55.
Is formed. The cladding layers 54 and 56 and the window layer 58 are both transparent to light emitted from the active layer 55.

As a semiconductor light emitting device having such an InGaAlP active layer 55 laminated on a GaAs substrate 51, there is, for example, a device described in Japanese Patent Publication No. 6-103579.

[0006]

However, the active layer 55
Most of the light traveling toward the n-type GaAs substrate 51 is absorbed by the GaAs layer since the band gap of GaAs is smaller than the band gap of the active layer 55. As a result, the light extraction efficiency is reduced to almost half.

It has been proposed to use a GaP substrate instead of a GaAs substrate in order to improve the reduction of the luminous efficiency due to the absorption of light by such a GaAs layer, especially the n-type GaAs substrate 51. However, it is very difficult at present to form a quaternary InGaAlP compound semiconductor layer on a GaP substrate. For this reason, in manufacturing a semiconductor light emitting device having this configuration, a method is used in which a GaAs substrate is removed after a compound semiconductor is epitaxially grown on an n-type GaAs substrate 51, and the substrate is replaced with a GaP substrate.

However, such a method has a problem that the non-defective product rate is considerably reduced mainly for the following two reasons. That is, the first reason is that the bonding surface between the substrate and the compound semiconductor needs a flat surface at a clean atomic level, and it is very difficult to form such a surface over the entire wafer. Then, when a GaP substrate having a different lattice constant is bonded to a bonding surface of a compound semiconductor that has been aligned with a GaAs substrate, the compound semiconductor side and the GaP substrate are bonded together.
The second reason is that lattice mismatch with the P substrate side is inevitable, and distortion occurs to cause transition.

Further, as described above, a Bragg reflection layer 53 of a superlattice of n-type GaAs and InAlP is formed before the buffer layer 52 of n-type GaAs.
At present, the structure which reflects light toward the n-type GaAs substrate 51 side toward the top surface in 3 is the mainstream at present. With such a structure, light is not absorbed by the GaAs layer, and light extraction efficiency is improved.

However, even when the Bragg reflection layer 53 is provided, the reflectivity of the Bragg reflection layer 53 fluctuates due to the variation in the thickness of the superlattice, and is 70% on average.
It is about. Therefore, the remaining light not reflected is n
Is absorbed by the GaAs buffer layer 52 and the GaAs layer of the n-type GaAs substrate 51.

On the other hand, light heading toward the top surface is extracted using the upper surface of the window layer 58 as the main light extraction surface. However, since the p-side electrode 60 is formed at the center of the main light extraction surface, light extraction is obstructed corresponding to the area occupied by the p-side electrode 60. And the p-side electrode 6
Since 0 needs to have a certain lower limit for wire bonding, the ratio of light extraction loss due to interference of the p-side electrode 60 increases as the chip size of the semiconductor light emitting element 50 decreases. For example, 0.23m
If the chip size is m square, the light extraction loss is about 20% in consideration of the dicing margin for chip formation, and the influence on the light emission luminance cannot be ignored.

As described above, although the semiconductor light emitting device having the active layer of InGaAlP can be found to be industrially useful for the high-brightness light emission function of red to green, the light emission efficiency due to light absorption on the GaAs substrate side. Is inevitable, and no effective manufacturing method has been established to avoid this.

The problem to be solved in the present invention is that the light emitted from the active layer is not absorbed by the GaAs substrate.
Another object of the present invention is to provide a structure of a light emitting element which can be efficiently taken out without being hindered by an electrode on a top surface side, and a method of manufacturing the light emitting element with a good yield.

[0014]

The composite light-emitting device of the present invention is a composite light-emitting device in which a submount device and a semiconductor light-emitting device are superimposed on each other to conduct electricity, wherein the semiconductor light-emitting device has InGaAlP as an active layer, With the first conductivity type semiconductor layer facing upward and the upper surface serving as a light extraction surface,
The lower surface includes a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region. The submount element has two pole portions and the second electrode formed on the lower surface. A back electrode connected to one of the two pole portions, a third electrode formed on the upper surface and connected to one of the pole portions, and a fourth electrode connected to the other pole portion. The electrodes are arranged so as to face the first electrode and the second electrode of the semiconductor light emitting element, respectively, and further provided with a bonding pad part on an electrode side connected to the pole part not connected to the back electrode, further comprising: The light emitting device and the submount device are characterized in that opposing electrodes are connected by microbumps.

In the composite light emitting device having such a configuration,
By making both the first and second conductivity type semiconductor layers transparent to light from the active layer and having no GaAs substrate, the light extraction efficiency can be increased.

Further, the manufacturing method of the present invention provides the method of
On an aAs substrate, at least the first conductivity type semiconductor layer and a first conductivity type InG having an Al mixed crystal ratio higher than that of the active layer.
a first step of sequentially forming an aAlP layer, the InGaAlP active layer, a second conductivity type InGaAlP layer having a higher Al mixed crystal ratio than the active layer, and a second conductivity type semiconductor layer;
By removing a part of the second conductivity type semiconductor region, the first conductivity type semiconductor region is removed.
Exposing a part of the conductive type semiconductor region, forming the first electrode made of a first metal film on a part of the first conductive type semiconductor region, and forming a part of the second conductive type semiconductor region. A second step of forming the second electrode made of a second metal film thereon, and a third step of forming a microbump on an opposite electrode of the semiconductor light emitting element or the submount element;
A fourth step of electrically connecting the opposing electrodes of the semiconductor light emitting element and the submount element through micro bumps; and a first step of absorbing light emitted from the active layer.
A fifth step of removing the conductive GaAs substrate.

With such a configuration and a manufacturing method, it is possible to remove a GaAs layer and a GaAs substrate having a high yield rate.

[0018]

The invention according to claim 1 is a composite light-emitting device in which a submount element and a semiconductor light-emitting element are superimposed and made conductive, wherein the semiconductor light-emitting element is In.
GaAlP is used as an active layer, the first conductive type semiconductor layer is directed upward, and the upper surface is used as a light extraction surface, and the lower surface is provided with a first electrode and a second conductive type semiconductor region connected to the first conductive type semiconductor region. A second electrode connected to each of the sub-mount elements, the sub-mount element having two poles, a back electrode formed on the lower surface and connected to one of the two poles, and one pole formed on the upper surface. A third electrode to be connected and a fourth electrode to be connected to the other pole portion, wherein the third electrode and the fourth electrode are arranged so as to face the first electrode and the second electrode of the semiconductor light emitting device, respectively. It is characterized in that a bonding pad portion is provided on the electrode side connected to the pole portion which is not connected to the back surface electrode, and further, the opposing electrodes of the semiconductor light emitting element and the submount element are connected by micro bumps. A composite light-emitting element according to, GaA
The s layer and the GaAs substrate can be removed, there is no absorption of light by GaAs, and the first light-extraction surface
Since the conductive type semiconductor layer has no electrode that hinders light extraction, it has an effect of increasing light extraction efficiency.

According to a second aspect of the present invention, in the semiconductor light emitting device, the first conductivity type semiconductor layer is made of GaAlAs or InG.
2. A monolayer film of aAlP or a laminated film of both.
The light-emitting device according to claim 1, wherein the first conductivity type semiconductor layer is a layer serving as a light extraction surface, so that light from the active layer is transmitted, and the active layer is formed on the layer in the first step. Is formed, it is necessary that lattice matching be possible. However, the compound semiconductor layer has an effect that both can be satisfied.

Further, the GaAlAs layer having a high Al mixed crystal ratio is easily oxidized by moisture and the like, and the oxide layer does not transmit light, so that it is not preferable to expose it to the outermost surface of the light extraction surface.
In addition, the InGaAlP layer has a disadvantage that it is difficult to form a thick layer. Further, the first conductivity type semiconductor layer includes:
Since it is preferable that the layer thickness is at least 5 μm or more, the first surface of the first conductivity type semiconductor is more preferably formed by forming the outermost surface of the light extraction surface as a thin layer of InGaAlP and forming a thin layer of GaAlAs thereunder. There is an effect that a layer can be formed.

According to a third aspect of the present invention, in the semiconductor light emitting device, the second conductivity type semiconductor layer is made of GaAlAs, InGa.
3. The composite light-emitting device according to claim 1, wherein the second conductive semiconductor layer is made of any one of AlP, GaP, and GaAsP, and the second conductive semiconductor layer needs to be transparent to light from the active layer. Semiconductors have the effect that this can be satisfied.

The invention according to claim 4 is the invention according to claims 1 to 3
The method for producing a composite light-emitting device according to any one of the above,
On a first conductivity type GaAs substrate, at least the first conductivity type semiconductor layer, a first conductivity type InGaAlP layer having an Al content higher than that of the active layer, an active layer of the InGaAlP, and an Al content of the active layer. Second conductivity type InG with high crystal ratio
aAlP layer and a first conductive type semiconductor layer
And removing a part of the second conductivity type semiconductor region to expose a part of the first conductivity type semiconductor region, and forming a first metal on a part of the first conductivity type semiconductor region. A second step of forming the first electrode made of a film and forming the second electrode made of a second metal film on a part of the second conductivity type semiconductor region; A third step of forming micro-bumps on opposing electrodes of the mount element, a fourth step of electrically connecting the semiconductor light-emitting element and the opposing electrodes of the submount element via micro-bumps, A fifth step of removing the first conductivity type GaAs substrate that absorbs light emitted from the active layer. A method of manufacturing a composite light emitting device, the method comprising: Light emitting element as submount element While removing the GaAs substrate after combined, if bonding the semiconductor light emitting device chip state submount wafer state, the subsequent GaAs substrate removing step can be processed in the form of wafers, GaA
There is an effect that a light-emitting element having the above-mentioned structure without absorption by the s substrate can be manufactured with high yield.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1 and 2 are schematic views sequentially showing steps of a method for manufacturing a composite light emitting device according to an embodiment of the present invention, and FIG. 3 is a schematic longitudinal sectional view of the composite light emitting device obtained by the manufacturing method of the present invention. FIG.

The composite light-emitting device of the present invention is made of InGaAlP
The semiconductor light-emitting element 1 having the active layer of FIG. Then, the semiconductor light emitting device 1 is manufactured by the process shown in FIG. 1, and a final product obtained by compounding with the submount device 2 is manufactured by the process shown in FIG.

First, the manufacture of the semiconductor light emitting device 1 will be described in order.

As shown in FIG. 1A, an n-type GaAs substrate 3 is formed by a method similar to the conventional metal organic chemical vapor deposition method.
N-type GaAs buffer layer 4 and n-type InGaAl
A P layer 5, an n-type GaAlAs layer 6, an n-type InGaAlP cladding layer 7, an undoped InGaAlP active layer 8,
p-type InGaAlP cladding layer 9, p-type GaAlAs
The layers 10 are sequentially stacked to form a double hetero structure (first step). In this laminating step, the thickness of each compound semiconductor layer is about 0.5 μm for the n-type GaAs buffer layer 4, about 1 μm for the n-type InGaAlP layer 5, about 6 μm for the n-type GaAlAs layer 6, and about 6 μm for the n-type InGaAlP cladding layer. 7: about 1 μm, active layer of non-doped InGaAlP 8: about 0.1 μm
5 μm, p-type InGaAlP cladding layer 9: about 1 μm
m, p-type GaAlAs layer 10: about 2 μm. And the clad layers 7, 9 sandwiching the active layer 8 as in the prior art,
Electrons and holes are confined by setting the Al mixed crystal ratio higher than that of the active layer 8. The cladding layers 7, 9 and GaAs
Both the As layers 6 and 10 and the n-type InGaAlP layer 5 are transparent to light emitted from the active layer 8. However, in the present invention, GaAs as shown in the conventional example is used.
And a Bragg reflection layer of InGaP superlattice were not formed.

Next, a pattern is formed on the surface of the p-type GaAlAs layer 10 of the wafer on which the double heterostructure is formed by a photolithography process using a resist, and the surface excluding a part thereof is covered with a resist film. Next, the portion not covered with the resist is etched to form a p-type GaAlAs layer 10, a p-type InGaAlP cladding layer 9, and an InGaAs layer.
1P active layer 8 and n-type InGaAlP cladding layer 7
Is removed to expose the n-type GaAlAs layer 6 on the surface.
Then, after removing the resist, an alloy layer of Au and Ge and A on the n-type GaAlAs layer 6 side exposed on the surface of the wafer.
n-side electrode 11 (first electrode) composed of a u-layer and p-type GaAl
On the As layer 10 side, an alloy layer of Au and Zn and a p
The side electrode 12 (second electrode) is formed (second step).

After the second step, the semiconductor light emitting element 1a shown in the second step of FIG. 1 is obtained by dicing the wafer into chips for each light emitting element.

Next, a submount element 2 is formed using an n-type Si wafer W (see FIG. 2). As shown in FIG. 3, the submount element 2 manufactured from the n-type Si wafer W has two independent Al electrodes on the surface on which the semiconductor light emitting element 1 is mounted. One of these electrodes is an electrode 13 (third electrode) formed by sandwiching an insulating film between the Si and Al electrodes of the n-type Si wafer W, and is integrally connected to the electrode 13. A bonding pad region 13a is also formed. Also, the other electrode is
The electrode 14 (fourth electrode) formed by conducting with the Si of the n-type Si wafer W, and also conducts through the back electrode 15 formed on the bottom surface side of the n-type Si wafer W via Si. .

The electrode 1 is placed on such an n-type Si wafer W.
After the formation of the micro bumps 3 and 14, micro bumps 16 and 17 are formed on the surfaces of the electrodes 13 and 14, respectively, as shown in the third step of FIG. Micro bumps 16,
17 is formed by a plating bump method or a stud bump method (third step).

Next, as shown in the fourth step of FIG. 2, an n-type Si having a uniform pattern of the submount element 2 is formed.
From above the wafer W, the electrode 1 of the submount element 2
Reference numerals 3 and 14 denote the n-side and p-side electrodes 1 of the semiconductor light emitting device 1a.
It is implemented as a relationship of posture that faces 1 and 12.
That is, the semiconductor light emitting device 1a is held by vacuum, approached to the n-type Si wafer W, brought into contact with the micro bumps 16 and 17 therebetween, and bonded by applying ultrasonic waves, load and heat (fourth step). At this time, an epoxy resin may be filled in between them to join them. In this case, after all the semiconductor light emitting elements are joined, the epoxy resin is cured by baking.

Next, the GaAs substrate 3 of the semiconductor light emitting device 1a is removed by etching. In this etching step, in particular, the Al electrodes 13 and 14 of the submount element 2 are formed.
And n-side and p-side electrodes 11, 1 of the semiconductor light emitting element 1a
2 is covered with a resist protective film. Then, an etchant obtained by mixing H ₃ PO ₄ and H ₂ O ₂ and N 2
Using an etching solution in which H ₄ OH and H ₂ O ₂ are mixed, G
The aAs substrate 3 and the GaAs buffer layer 4 are removed by etching (fifth step).

Next, after removing the resist, the n-type Si wafer W is diced by the dicer D (sixth step).
As a result, a composite light emitting device including the semiconductor light emitting device 1 and the submount device 2 shown in FIG. 3 is obtained.

The composite light emitting device obtained by the above manufacturing method is an assembly in which the back electrode 15 side of the submount device 2 is die-bonded to the mounting portion of the lead frame and wire-bonded to the bonding pad region 13a of the electrode 13 on the upper surface. Implemented by Then, when electricity is supplied from the lead frame side, the active layer 8 which is the light emitting layer of the semiconductor light emitting element 1 emits light, and the transparent or light transmissive n-type InGaAlP layer 7 and the n-type GaAl
Light is emitted from the n-type InGaAlP layer 5 through the As layer 6 with its upper surface as the main light extraction surface.

On the other hand, the light from the active layer 8 is not only emitted from the main light extraction surface side, but also passes through the transparent or light-transmissive p-type InGaAlP cladding layer 9 on the side and below to form p-type GaAlAs. It is also emitted downward from the layer 10. Therefore, if the p-side electrode 12 formed on the lower surface of the semiconductor light emitting element 1 in FIG. 3 is formed of a metal having high reflectivity, light from the active layer 8 is reflected by the p-side electrode 12 and It is added to the light traveling toward the main light extraction surface.

Accordingly, the light emitted from the active layer 8 does not have a layer for absorbing the light, that is, a substrate such as a GaAs layer, and the reflected light using the p-side electrode 12 is obtained. Light extraction efficiency can be increased. Moreover, the n-type InGaAl on the main light extraction surface
Since there is no light blocking member such as an electrode on the surface of the P layer 5, a wide light emitting surface can be ensured, which can also improve the light extraction efficiency.

FIG. 4 shows another embodiment of the manufacturing method of the present invention, in which the micro bumps 16 on the n-type Si wafer W,
FIG. 9 is a schematic view showing steps from formation of a semiconductor light-emitting element 17 to mounting and dicing of the semiconductor light-emitting element 1.

The manufacturing method shown in FIG.
N-type Si wafer W
Instead of mounting the semiconductor light-emitting element 1 on the chip, the semiconductor light-emitting element 1 is mounted on a block chip unit including a pattern of the plurality of semiconductor light-emitting elements 1 to increase the manufacturing efficiency.

As an example of the block chip, the one shown in the schematic plan view of FIG. 5 can be used. That is, (a) of the figure shows a pattern in which three semiconductor light emitting elements 1 are formed on one block chip 21, and (b) of the figure shows six semiconductor light emitting elements on one block chip 22. 1 is formed. In any of the examples, the n-side and p-side electrodes 11 and 12 are formed on the element pattern of the wafer by the manufacturing method shown in FIG. Block chips 21 and 22 having shapes are obtained.

The block chip 21 shown in FIG.
In this example, the semiconductor light emitting device 1 having the same planar orientation is 3
It is a pattern in which the pieces are arranged. On the other hand, FIG.
In the block chip 22, the group of three semiconductor light-emitting elements 1 is arranged in two rows, and the semiconductor light-emitting elements 1 in each row have a mirror-symmetric pattern.

The manufacture of the block chips 21 and 22 is the same as the first and second steps described with reference to FIG. 1. Instead of dicing the semiconductor light-emitting element 1 as a single unit, FIG. A) dice as a single block chip 21 or 22 is mounted on an n-type Si wafer W. Then, in a third step shown in FIG. 4, the micro bumps 16 and 17 are formed in accordance with the pattern of the submount element formed on the n-type Si wafer W. This step is the same as the third step shown in FIG.

Here, the manufacturing process of FIG. 4 corresponds to FIG.
Is mounted on an n-type Si wafer W. Micro bumps 16 and 17 are arranged in two rows of two sets each corresponding to one semiconductor light emitting element 1.
These two pairs are formed as a pattern in which three rows are arranged in the depth direction. And block chip 2
2 is the long side direction (left and right direction in the figure) of FIG.
Is mounted in the fourth step of FIG. 4 in the depth direction of the n-type Si wafer W. In such mounting, the patterns of the six semiconductor light emitting elements 1 can be mounted on the n-type Si wafer W in one mounting process, and the process time can be reduced by about six times as compared with the mounting shown in FIG.

After the mounting of the block chip 22, the GaAs substrate 3 and the GaAs buffer layer 4 are removed from the block chip 22 by etching as in the step of FIG. 2 (fifth step). Then, after the resist is removed, the n-type Si wafer W and the block chips 22 are simultaneously diced by the dicer D (sixth step), whereby the semiconductor light emitting device shown in FIG. 1
And a sub-mount element 2 to obtain a composite light-emitting element.

[0045]

According to the present invention, the light emitted from the active layer is G
The product can be efficiently taken out without being absorbed by the aAs substrate and without being hindered by the electrode on the top surface side, and a product with significantly improved luminous efficiency can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a process of manufacturing a semiconductor light emitting device in a method of manufacturing a composite light emitting device according to the present invention.

FIG. 2 is a schematic view showing steps from formation of a microbump on an n-type Si wafer to dicing in the method for manufacturing a composite light emitting device of the present invention.

FIG. 3 is a longitudinal sectional view schematically showing a composite light emitting device of the present invention obtained by the steps of FIGS. 1 and 2;

FIG. 4 is an example in which a block chip on which a plurality of semiconductor light emitting element patterns are formed is used in the method for manufacturing a composite device of the present invention, and is a schematic diagram showing steps from formation of microbumps on an n-type Si wafer to dicing. Figure

FIG. 5 is a schematic plan view of a block chip used in the manufacturing process of FIG. 4;

FIG. 6 is a cross-sectional view showing a conventional structure of a light emitting device using a quaternary compound semiconductor InGaAlP as an active layer.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 1a Semiconductor light emitting element 2 Submount element 3 GaAs substrate 4 GaAs buffer layer 5 n-type InGaAlP layer 6 GaAlAs layer 7 clad layer 8 active layer 9 clad layer 10 p-type GaAlAs layer 11 n-side electrode 12 p-side electrode 13 electrode 13a Bonding pad area 14 Electrode 15 Back electrode 16, 17 Micro bump 21, 22 Block chip

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hiroshi Murata 1-1, Sakaicho, Takatsuki-shi, Osaka Matsushita Electronics Corporation F-term (reference) 5F041 AA03 AA11 AA41 CA04 CA05 CA33 CA34 CA35 CA36 CA37 CA38 CA65 CA67 CA74 CA76 CA82 CA83 CA85 CA92 DA04 DA07 DA09 DA20

Claims (4)

[Claims] 1. A composite light-emitting element in which a submount element and a semiconductor light-emitting element are superposed and electrically connected, wherein the semiconductor light-emitting element has InGaAlP as an active layer,
With the first conductive type semiconductor layer facing upward, the upper surface thereof is used as a light extraction surface, and on the lower surface, a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region are provided. The submount element includes two pole portions, a back electrode formed on the lower surface and connected to one of the two pole portions, a third electrode formed on the upper surface and connected to one of the pole portions, A fourth electrode connected to the other pole portion, wherein the third electrode and the fourth electrode are arranged so as to face the first electrode and the second electrode of the semiconductor light emitting element, respectively, and are not connected to the back electrode. A composite light emitting device comprising: a bonding pad portion provided on an electrode side connected to the other pole portion; and opposing electrodes of the semiconductor light emitting device and the submount device connected by microbumps. 2. The composite light emitting device according to claim 1, wherein the first conductivity type semiconductor layer of the semiconductor light emitting device is a single layer film of GaAlAs or InGaAlP or a laminated film of both. 3. The semiconductor light emitting device according to claim 1, wherein the second conductivity type semiconductor layer is GaAlAs, InGaAlP, GaP, or G.
The composite light emitting device according to claim 1, wherein the composite light emitting device is made of any of aAsP. 4. The method of manufacturing a composite light emitting device according to claim 1, wherein at least the first conductive type semiconductor layer and the active layer are formed on a first conductive type GaAs substrate. A first conductivity type InGaAlP layer having a high mixed crystal ratio, an active layer of the InGaAlP, and a second conductivity type InG having a higher Al mixed crystal ratio than the active layer;
aAlP layer and a first conductive type semiconductor layer
And removing a part of the second conductivity type semiconductor region to form the first conductive type semiconductor region.
Exposing a part of the conductive type semiconductor region, forming the first electrode made of a first metal film on a part of the first conductive type semiconductor region, and forming a part of the second conductive type semiconductor region. A second step of forming the second electrode made of a second metal film thereon; a third step of forming a microbump on an opposing electrode of the semiconductor light emitting element or the submount element; A fourth step of electrically connecting the opposing electrodes of the element and the submount element via micro bumps; and a fifth step of removing the first conductivity type GaAs substrate that absorbs light emitted from the active layer. And a method for manufacturing a composite light emitting device.