JP3358280B2 - Developer for photosensitive polyimide precursor - Google Patents
Developer for photosensitive polyimide precursorInfo
- Publication number
- JP3358280B2 JP3358280B2 JP6133194A JP6133194A JP3358280B2 JP 3358280 B2 JP3358280 B2 JP 3358280B2 JP 6133194 A JP6133194 A JP 6133194A JP 6133194 A JP6133194 A JP 6133194A JP 3358280 B2 JP3358280 B2 JP 3358280B2
- Authority
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- Japan
- Prior art keywords
- weight
- developer
- development
- polyimide precursor
- temperature
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、電子材料として有用な
感光性ポリイミド前駆体組成物の現像液に関する。The present invention relates to a developer for a photosensitive polyimide precursor composition useful as an electronic material.
【0002】[0002]
【従来の技術】従来、感光性ポリイミド前駆体の現像液
としては、N−メチルピロリドンなどの双極性非プロト
ン性溶剤に貧溶媒としてメタノールなどの低級アルコー
ルや水を加えたもの(例えば、特開昭58−66940
号公報、特開昭58−223149号公報、特開昭62
−127738号公報)が主に使用されていた。しか
し、このような現像液は、半導体製造プロセスで一般的
に行われているスプレー現像やパドル現像を行う場合、
現像液の低級アルコール成分が蒸散するために現像時間
が長くなり、スプレー現像やパドル現像が採用できず、
浸漬現像方式によらざるを得ないという欠点があった。
このために、現像液に加える貧溶媒としてキシレンのよ
うな芳香族炭化水素が使用されていた(例えば、特開平
2−255898号公報)。2. Description of the Related Art Conventionally, as a developer for a photosensitive polyimide precursor, a dipolar aprotic solvent such as N-methylpyrrolidone or the like, to which a lower alcohol such as methanol or water has been added as a poor solvent (for example, see 58-66940
JP, JP-A-58-223149, JP-A-58-223149
No. 127738) was mainly used. However, such a developing solution is used when performing spray development or paddle development generally performed in a semiconductor manufacturing process.
Since the lower alcohol component of the developer evaporates, the development time becomes longer, and spray development or paddle development cannot be adopted.
There was a drawback that the immersion development method had to be used.
For this reason, an aromatic hydrocarbon such as xylene has been used as a poor solvent to be added to the developer (for example, JP-A-2-255989).
【0003】しかしながら、この現像液に使用されるキ
シレンは、皮膚炎、眼、鼻、のどの刺激やキシレン中に
不純物として混在するベンゼンによって、骨髄障害など
を起こすことなどの有毒性がいわれており(有機溶剤作
業主任者テキスト、中央労働災害防止協会(198
9))安全上使用しにくいものであった。However, the xylene used in this developer is said to be toxic, such as causing dermatitis, irritation of the eyes, nose and throat, and causing bone marrow disorders due to benzene mixed as an impurity in xylene. (Organic solvent work chief textbook, Central Occupational Accident Prevention Association (198
9)) It was difficult to use for safety.
【0004】[0004]
【発明が解決しようとする課題】本発明は、かかる従来
技術の諸欠点に鑑み創案されたもので、その目的は、現
像液の温度低下や液温ムラがなく、スプレー現像やパド
ル現像を現像ムラなどを生じることなく良好に安定して
行うことができるとともに安全面、作業面からも使用し
やすい感光性ポリイミド前駆体用の現像液を提供するこ
とにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks of the prior art. It is an object of the present invention to develop a spray developing method and a paddle developing method without reducing the temperature of a developing solution or unevenness in the temperature of the developing solution. An object of the present invention is to provide a developer for a photosensitive polyimide precursor which can be satisfactorily and stably performed without causing unevenness and is easy to use from the viewpoint of safety and work.
【0005】[0005]
【課題を解決するための手段】本発明は、(1)双極性
非プロトン性極性溶剤60〜85重量%と、沸点が10
0〜300℃、引火点が1気圧で21℃以上のエステル
5〜30重量%と、水5重量%以上10重量%未満とか
らなることを特徴とする感光性ポリイミド前駆体用現像
液により達成される。According to the present invention, there are provided (1) a dipolar aprotic polar solvent having a boiling point of 60 to 85% by weight ,
0 to 300 ° C., achieved by a photosensitive polyimide precursor-body developer flash point characterized by comprising the ester 5-30% by weight of more than 21 ° C. at one atmosphere pressure, water 5% by weight or more and less than 10 wt% Is done.
【0006】本発明の現像液に使用される双極性非プロ
トン性極性溶剤としては、N−メチルピロリドン、N,
N−ジメチルアセトアミド、N,N−ジメチルホルムア
ミド、スルホラン、N,N−ジエチルホルムアミドなど
が挙げられるが、これ以外のものでももちろん使用でき
る。The dipolar aprotic polar solvent used in the developer of the present invention includes N-methylpyrrolidone, N,
N-dimethylacetamide, N, N-dimethylformamide, sulfolane, N, N-diethylformamide and the like can be mentioned, but other substances can of course be used.
【0007】双極性非プロトン性極性溶剤の配合量は、
現像液総重量に対して60〜85重量%である必要があ
り、さらに好ましくは、63〜82重量%である。60
重量%未満の場合は、現像速度が遅くなり、また、85
重量%をこえる場合は、現像時に感光性ポリイミド前駆
体の被膜が膜あれを起こすなどの問題を生じるので、注
意を要する。The amount of the dipolar aprotic polar solvent is as follows:
It must be 60 to 85% by weight, more preferably 63 to 82% by weight, based on the total weight of the developer. 60
When the amount is less than 10% by weight, the developing speed becomes slow.
If the content is more than the weight percentage, care must be taken because problems such as the occurrence of a film in the photosensitive polyimide precursor film during development may occur.
【0008】本発明において使用されるエステルとして
は、酢酸ベンジル、酢酸 2−エチルヘキシル、酪酸イ
ソペンチル、ステアリン酸ブチル、ステアリン酸ペンチ
ル、安息香酸メチル、安息香酸エチル、安息香酸プロピ
ル、安息香酸ブチル、安息香酸イソペンチル、安息香酸
ベンジル、ケイ皮酸エチル、アビエチン酸エチル、アビ
エチン酸ベンジル、アジピン酸ビス(2−エチルヘキシ
ル)、シュウ酸ジエチル、シュウ酸ジブチル、シュウ酸
ジペンチル、マロン酸ジエチル、マレイン酸ジメチル、
マレイン酸ジエチル、マレイン酸ジブチル、クエン酸ト
リブチル、セバシン酸ビス(2−エチルヘキシル)、フ
タル酸ジメチル、フタル酸ジエチル、モノアセチン、ジ
アセチン、トリアセチン、モノブチリン、炭酸エチレ
ン、炭酸プロピレン、乳酸エチル、ピルビン酸エチル、
プロピレングリコールモノメチルエーテルアセテート、
メチル−3−メトキシプロピオネート、エチル−3−エ
トキシプロピオネート、ギ酸ペンチル、酢酸ブチル、酢
酸ペンチル、酢酸イソペンチル、酢酸 3メトキシブチ
ル、酢酸 sec−ヘキシル、酢酸 2−エチルブチ
ル、酢酸シクロヘキシル、プロピオン酸ブチル、プロピ
オン酸イソペンチル、酪酸エチル、酪酸ブチル、イソ酪
酸イソブチル、2−ヒドロキシ−2−メチルプロピオン
酸エチル、炭酸ジエチルなどが挙げられる。好ましく
は、炭酸エチレン、炭酸プロピレン、乳酸エチル、ピル
ビン酸エチル、プロピレングリコールモノメチルエーテ
ルアセテート、メチル−3−メトキシプロピオネート、
エチル−3−エトキシプロピオネートである。これらの
エステルは、単独もしくは、2種類以上混合して用いて
もよい。[0008] As esters used in the present invention, benzyl acetic acid, 2-ethylhexyl acetate, isopentyl butyrate, butyl stearate, pentyl stearate, methyl benzoate, ethyl benzoate, propyl benzoate, butyl benzoate, benzoic acid isopentyl, benzyl benzoate, ethyl cinnamate, ethyl abietate, benzyl abietic acid, adipic acid bis (2-ethylhexyl), shea oxalic acid diethyl, dibutyl oxalate, oxalic acid dipentyl, diethyl malonate, dimethyl maleate ,
Diethyl maleate, dibutyl maleate, tributyl citrate, bis (2-ethylhexyl) sebacate, dimethyl phthalate, diethyl phthalate, monoacetin, diacetin, triacetin, monobutyrin, ethylene carbonate, propylene carbonate, ethyl lactate, ethyl pyruvate,
Propylene glycol monomethyl ether acetate,
Methyl-3-methoxypropionate, ethyl-3-ethoxypropionate, pentyl formate, butyl acetate, pentyl acetate, isopentyl acetate, 3-methoxybutyl acetate, sec-hexyl acetate, 2-ethylbutyl acetate, cyclohexyl acetate, propionic acid Butyl, isopentyl propionate, ethyl butyrate, butyl butyrate, isobutyl isobutyrate, ethyl 2-hydroxy-2-methylpropionate, diethyl carbonate and the like. Preferably, ethylene carbonate, propylene carbonate, ethyl lactate, ethyl pyruvate, propylene glycol monomethyl ether acetate, methyl-3-methoxypropionate,
Ethyl-3-ethoxy propionate and. These esters may be used alone or in combination of two or more.
【0009】該エステルの沸点範囲としては、100℃
〜300℃の範囲であることが好ましく、さらに好まし
くは、120℃〜250℃の範囲である。この範囲の温
度を外れると現像液の現像時の温度制御を行う能力が弱
くなるので注意を要する。該エステルの引火点は、1気
圧で21℃以上が好ましい。該温度が1気圧で21℃未
満の場合、室温での引火性が高いために、消防法第2条
第4類第1石油類に準じた取扱いが必要であり、作業
性、貯蔵性に問題が生じる場合がある。The boiling point range of the ester is 100 ° C.
The temperature is preferably in the range of from 300 to 300 ° C, and more preferably in the range of from 120 ° C to 250 ° C. If the temperature is outside this range, the ability to control the temperature during the development of the developing solution becomes weak, so care must be taken. The flash point of the ester is preferably 21 ° C. or more at 1 atm. If the temperature is less than 21 ° C. at 1 atm, it must be handled in accordance with the Fire Service Law, Article 2, Class 4, Class 1 petroleum because of its high flammability at room temperature. May occur.
【0010】該エステルの配合量は、現像液総重量に対
して5〜30重量%である必要があり、さらに好ましく
は、5〜28重量%である。この範囲より外れた場合、
現像液が相溶しなくなったり、現像時に感光性ポリイミ
ド前駆体の被膜にクラックが入りやすくなるなどのおそ
れがあるために注意を要する。The compounding amount of the ester must be 5 to 30% by weight, more preferably 5 to 28% by weight, based on the total weight of the developing solution. If you fall outside this range,
Care must be taken because there is a risk that the developer will not be compatible or that the photosensitive polyimide precursor film will be easily cracked during development.
【0011】本発明にかかる現像液は、上述のように特
定量の双極性非プロトン性溶剤と特定量のエステルから
なる現像液成分中にさらに現像液総重量に対して5重量
%以上10重量%未満の範囲の水を添加することが重量
である。水の配合量が、現像液総重量に対して5重量%
より少ない場合は、クラックを抑制する能力が減少する
ため好ましくなく、また、10重量%以上の場合には現
像液成分が均一に溶解しないため、使用することができ
ない。As described above, the developer according to the present invention contains 5% by weight or more and 10% by weight or more based on the total weight of the developer in a developer component comprising a specific amount of a dipolar aprotic solvent and a specific amount of an ester. Adding less than% of water is by weight. 5% by weight of water based on the total weight of developer
If the amount is less, the ability to suppress cracks decreases, which is not preferable. If the amount is more than 10% by weight, the developer components are not uniformly dissolved, so that they cannot be used.
【0012】なお、本発明の現像液に添加される水とし
ては、感光性ポリイミド前駆体が使用される半導体分野
の要求から、イオン交換水や蒸留水のごとき純水である
ことが好ましい。The water to be added to the developer of the present invention is preferably pure water such as ion-exchanged water or distilled water in view of the requirements in the field of semiconductors in which the photosensitive polyimide precursor is used.
【0013】これらの現像液に用いられる感光性ポリイ
ミド前駆体としては、テトラカルボン酸とジアミンを組
み合わせて双極性非プロトン性溶剤中で一般的に製造さ
れるポリイミド前駆体のワニスにメタクリル基などの感
光基を有しているアミノ化合物を混合したもの(例えば
特公昭59−52822号公報)、光により2量化また
は重合可能な基をエステル結合で導入もの(例えば米国
特許3957512号明細書)、N−メチロールアクリ
ドアミド化合物をポリイミド前駆体のワニスに混合した
もの(例えば高分子学会予稿集p807、1990
年)、あるいはアクリルモノマーをポリイミド前駆体の
ワニスに混合したもの(例えば特開平2−50161号
公報)などが挙げられる。As the photosensitive polyimide precursor used in these developers, a varnish of a polyimide precursor generally prepared by combining a tetracarboxylic acid and a diamine in a dipolar aprotic solvent may be used. A mixture of an amino compound having a photosensitive group (for example, JP-B-59-52822), a compound capable of introducing a dimerizable or polymerizable group by light through an ester bond (for example, US Pat. No. 3,957,512); A mixture of a methylol acrylamide compound with a varnish of a polyimide precursor (for example, Proceedings of the Society of Polymer Science, p. 807, 1990)
Year), or a mixture of an acrylic monomer and a varnish of a polyimide precursor (for example, JP-A-2-50161).
【0014】次に本発明の現像液を用いての感光性ポリ
イミド前駆体の現像方法について説明をする。Next, a method for developing a photosensitive polyimide precursor using the developing solution of the present invention will be described.
【0015】まず、感光性ポリイミド前駆体のワニスを
シリコンウエハなどの基板の上にスピンコートなどの手
法で塗布を行い、ホットプレートやオーブンの中で溶剤
を飛散させ、クロム製のフォトマスクを介して所定量の
露光を行う。その後、ホットプレートやオーブンの中で
脱水ベーク等の熱処理を施す。現像方法としては、スピ
ンナ上にシリコンウエハなどの基板を固定して、毎分1
00回転から3000回転で回転を行いながら、現像液
をスプレーで噴霧するスプレー法、スピンナ上にシリコ
ンウエハなどの基板を固定して、基板の上に現像液を盛
り、静置して現像を行うパドル現像、現像液の槽に基板
を浸漬する浸漬現像、浸漬現像で超音波を当てる超音波
印加浸漬現像などが挙げられるが、どの様な方式でも現
像を行うことができる。現像後、現像液を取り除くため
にリンス液で洗浄される。リンス液としては、メチルア
ルコール、エチルアルコール、イソプロピルアルコール
などが挙げられる。ついで、ホットプレートやオーブン
で、100〜450℃程度の熱処理を行いポリイミドに
転換することで最終的な製品が得られる。First, a varnish of a photosensitive polyimide precursor is applied on a substrate such as a silicon wafer by a method such as spin coating, and the solvent is scattered in a hot plate or an oven. To perform a predetermined amount of exposure. Thereafter, heat treatment such as dehydration baking is performed in a hot plate or oven. The developing method is such that a substrate such as a silicon wafer is fixed on
A spray method in which a developer is sprayed while rotating from 00 to 3000 rotations. A substrate such as a silicon wafer is fixed on a spinner, the developer is poured on the substrate, and the substrate is allowed to stand for development. Paddle development, immersion development in which the substrate is immersed in a developing solution tank, ultrasonic application immersion development in which ultrasonic waves are applied by immersion development, and the like can be mentioned, and development can be performed by any method. After development, it is washed with a rinse solution to remove the developer. Examples of the rinsing liquid include methyl alcohol, ethyl alcohol, and isopropyl alcohol. Then, heat treatment is performed at about 100 to 450 ° C. on a hot plate or an oven to convert the polyimide to polyimide, thereby obtaining a final product.
【0016】[0016]
【実施例】以下、実施例に基いて本発明を具体的に説明
するが、本発明はこれらに限定されない。EXAMPLES Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto.
【0017】実施例1 感光性ポリイミド前駆体のワニスとして、東レ(株)製
UR−3140を用いて、4インチのシリコンウエハー
上に、1500回転で30秒間スピンコートを行った。
その後、オーブン中で80℃で30分の乾燥を行った後
に、キャノン(株)製コンタクトアライナーPLA−5
01Fを用い、クロム製のフォトマスクを介して、36
5nmの波長で200mJ/cm2 の露光を行った。Example 1 As a varnish of a photosensitive polyimide precursor, UR-3140 manufactured by Toray Industries, Inc. was spin-coated at 1500 rpm for 30 seconds on a 4-inch silicon wafer.
Then, after drying in an oven at 80 ° C. for 30 minutes, a contact aligner PLA-5 manufactured by Canon Inc.
01F, through a chrome photomask, 36
Exposure at 200 mJ / cm 2 was performed at a wavelength of 5 nm.
【0018】この試料をN−メチルピロリドン65重量
%と炭酸プロピレン(沸点238℃、1気圧での引火点
132℃)27重量%と水8重量%とからなる現像液を
用いて、東京エレクトロン(株)製クリーントラックを
用いてパドル現像を行った。Using a developer consisting of 65% by weight of N-methylpyrrolidone, 27% by weight of propylene carbonate (boiling point: 238 ° C., flash point at 1 atm 132 ° C.), and 8% by weight of water, Tokyo Electron was used. Paddle development was performed using a clean truck manufactured by KK
【0019】現像条件としては、現像液を3秒間シリコ
ンウエハーに100回転で塗布し、その後、5分間静置
して現像を行い、イソプロピルアルコールを500回転
でスプレーしてリンスを行った。As a developing condition, a developing solution was applied to a silicon wafer at 100 rotations for 3 seconds, then left standing for 5 minutes to perform development, and isopropyl alcohol was sprayed at 500 rotations for rinsing.
【0020】現像中のウエハーの温度は、中心部が2
2.2℃、周辺部が22.0℃であった(23℃のクリ
ーンルーム中)。During development, the temperature of the wafer is 2 at the center.
2.2 ° C., 22.0 ° C. in the periphery (in a 23 ° C. clean room).
【0021】現像の結果を光学顕微鏡で観察すると、2
0μmのスルホール部が完全に解像し、ウエハの中央部
から周辺部まで一様な解像をしていた。また、臭気はな
く、作業性は良好であった。Observation of the development results with an optical microscope shows that
The through hole of 0 μm was completely resolved, and uniform resolution was obtained from the center to the periphery of the wafer. Further, there was no odor and the workability was good.
【0022】実施例2 N−メチルピロリドン75重量%と炭酸プロピレン16
重量%と水9重量%とからなる現像液を用いる他は、実
施例1と全く同じ条件でパターン加工を行った。EXAMPLE 2 75% by weight of N-methylpyrrolidone and 16 parts of propylene carbonate
The pattern processing was performed under exactly the same conditions as in Example 1 except that a developing solution consisting of 9% by weight of water and 9% by weight of water was used.
【0023】現像中のウエハーの温度は、中心部が2
1.9℃、周辺部が21.8℃であった(23℃のクリ
ーンルーム中)。During development, the temperature of the wafer is 2 at the center.
The temperature was 1.9 ° C. and the surrounding area was 21.8 ° C. (in a clean room at 23 ° C.).
【0024】現像の結果を光学顕微鏡で観察すると、2
0μmのスルホール部が完全に解像し、ウエハの中央部
から周辺部まで一様な解像をしていた。また、臭気はな
く、作業性は良好であった。When the result of the development was observed with an optical microscope,
The through hole of 0 μm was completely resolved, and uniform resolution was obtained from the center to the periphery of the wafer. Further, there was no odor and the workability was good.
【0025】実施例3 N−メチルピロリドン65重量%と炭酸エチレン(沸点
242℃、1気圧での引火点160℃)27重量%と水
8重量%とからなる現像液を用いる他は、実施例1と全
く同じ条件でパターン加工を行った。Example 3 Example 3 was repeated except that a developer consisting of 65% by weight of N-methylpyrrolidone, 27% by weight of ethylene carbonate (boiling point: 242 ° C., flash point at 1 atm: 160 ° C.) and 8% by weight of water was used. Pattern processing was performed under exactly the same conditions as in Example 1.
【0026】現像中のウエハーの温度は、中心部が2
2.1℃、周辺部が21.8℃であった(23℃のクリ
ーンルーム中)。During development, the temperature of the wafer is 2 at the center.
The temperature was 2.1 ° C and the surrounding area was 21.8 ° C (in a clean room at 23 ° C).
【0027】現像の結果を光学顕微鏡で観察すると、2
0μmのスルホール部が完全に解像し、ウエハの中央部
から周辺部まで一様な解像をしていた。また、臭気はな
く、作業性は良好であった。Observation of the development results with an optical microscope shows that
The through hole of 0 μm was completely resolved, and uniform resolution was obtained from the center to the periphery of the wafer. Further, there was no odor and the workability was good.
【0028】実施例4 N−メチルピロリドン82重量%とプロピレングリコー
ルモノメチルエーテルアセテート(沸点146℃、1気
圧での引火点46℃)10重量%と水8重量%とからな
る現像液を用いる他は、実施例1と全く同じ条件でパタ
ーン加工を行った。Example 4 A developer containing 82% by weight of N-methylpyrrolidone, 10% by weight of propylene glycol monomethyl ether acetate (boiling point: 146 ° C., flash point at 1 atm: 46 ° C.) and 8% by weight of water was used. The pattern processing was performed under exactly the same conditions as in Example 1.
【0029】現像中のウエハーの温度は、中心部が2
2.1℃、周辺部が21.8℃であった(23℃のクリ
ーンルーム中)。The temperature of the wafer during development is 2
The temperature was 2.1 ° C and the surrounding area was 21.8 ° C (in a clean room at 23 ° C).
【0030】現像の結果を光学顕微鏡で観察すると、2
0μmのスルホール部が完全に解像し、ウエハの中央部
から周辺部まで一様な解像をしていた。また、臭気はな
く、作業性は良好であった。When the result of the development was observed with an optical microscope,
The through hole of 0 μm was completely resolved, and uniform resolution was obtained from the center to the periphery of the wafer. Further, there was no odor and the workability was good.
【0031】実施例5 N−メチルピロリドン65重量%とエチル−3−エトキ
シプロピオネート(沸点165℃、1気圧での引火点5
8℃)27重量%と水8重量%とからなる現像液を用い
る他は、実施例1と全く同じ条件でパターン加工を行っ
た。Example 5 65% by weight of N-methylpyrrolidone and ethyl-3-ethoxypropionate (boiling point 165 ° C., flash point at 1 atm.
(8 ° C.) Pattern processing was carried out under exactly the same conditions as in Example 1 except that a developer consisting of 27% by weight and 8% by weight of water was used.
【0032】現像中のウエハーの温度は、中心部が2
2.1℃、周辺部が21.8℃であった(23℃のクリ
ーンルーム中)。The temperature of the wafer during development is 2
The temperature was 2.1 ° C and the surrounding area was 21.8 ° C (in a clean room at 23 ° C).
【0033】現像時間を少し長く必要としたが、現像の
結果を光学顕微鏡で観察すると、20μmのスルホール
部が完全に解像し、ウエハの中央部から周辺部まで一様
な解像をしていた。また、臭気はなく、作業性は良好で
あった。Although the development time required a little longer, when the development result was observed with an optical microscope, the 20 μm through hole was completely resolved, and uniform resolution was obtained from the center to the periphery of the wafer. Was. Further, there was no odor and the workability was good.
【0034】比較例1 N−メチルピロリドン90重量%と酢酸エチル(沸点7
7℃、1気圧での引火点−4℃)7重量%と水3重量%
とからなる現像液を用いる他は、実施例1と全く同じ条
件でパターン加工を行った。Comparative Example 1 90% by weight of N-methylpyrrolidone and ethyl acetate (boiling point 7
7 ° C, flash point at 1 atm-4 ° C) 7% by weight and 3% by weight of water
Pattern processing was performed under exactly the same conditions as in Example 1 except that a developing solution consisting of
【0035】現像中のウエハーの温度は、中心部が1
9.1℃、周辺部が16.8℃であった(23℃のクリ
ーンルーム中)。During development, the temperature of the wafer is 1 at the center.
The temperature was 9.1 ° C. and the temperature at the periphery was 16.8 ° C. (in a clean room at 23 ° C.).
【0036】現像の結果を光学顕微鏡で観察すると、ウ
エハの中心部は、20μmのスルホール部が解像してい
たが、周辺部は、100μmのスルホール部が解像せ
ず、現像ムラが生じていた。Observation of the development results with an optical microscope revealed that a 20 μm through-hole was resolved at the center of the wafer, but a 100 μm through-hole was not resolved at the periphery, resulting in uneven development. Was.
【0037】比較例2 N−メチルピロリドン65重量%とキシレン27重量%
と水8重量%とからなる現像液を用いる他は、実施例1
と全く同じ条件でパターン加工を行った。Comparative Example 2 65% by weight of N-methylpyrrolidone and 27% by weight of xylene
Example 1 except that a developer consisting of water and 8% by weight of water was used.
The pattern processing was performed under exactly the same conditions as described above.
【0038】現像中のウエハーの温度は、中心部が2
2.0℃、周辺部が21.9℃であった(23℃のクリ
ーンルーム中)。The temperature of the wafer during development is 2
The temperature was 2.0 ° C. and the peripheral portion was 21.9 ° C. (in a clean room at 23 ° C.).
【0039】現像の結果を光学顕微鏡で観察すると、2
0μmのスルホール部が完全に解像し、ウエハの中央部
から周辺部まで一様な解像をしていたが、キシレン臭が
激しく、眼、鼻、のどを刺激した。When the result of the development was observed with an optical microscope,
The 0 μm through-hole was completely resolved, and uniform resolution was obtained from the center to the periphery of the wafer, but the xylene odor was intense and irritated the eyes, nose and throat.
【0040】比較例3 N−メチルピロリドン90重量%と炭酸プロピレン5重
量%と水5重量%とからなる現像液を用いる他は、実施
例1と全く同じ条件でパターン加工を行った。現像中の
ウエハーの温度は、中心部が22.3℃、周辺部が2
2.2℃であった(23℃のクリーンルーム中)。Comparative Example 3 Pattern processing was carried out under the same conditions as in Example 1 except that a developer consisting of 90% by weight of N-methylpyrrolidone, 5% by weight of propylene carbonate and 5% by weight of water was used. During the development, the temperature of the wafer was 22.3 ° C. at the center and 2% at the periphery.
2.2 ° C. (in a 23 ° C. clean room).
【0041】現像の結果を光学顕微鏡で観察すると、感
光性ポリイミド前駆体の皮膜が膜あれ、膜減りを起こ
し、良好なパターンが得られなかった。Observation of the result of the development with an optical microscope revealed that the photosensitive polyimide precursor film was roughened and reduced, and a good pattern could not be obtained.
【0042】[0042]
【発明の効果】本発明の現像液を用いることによって、
現像液の温度低下や温度ムラがないため、スプレー現像
やパドル現像を現像ムラなどを生じることなく良好に安
定して行うことができる利点がある。また、安全性、貯
蔵性、作業性からも使用しやすいなど顕著な実用効果を
奏するものである。By using the developing solution of the present invention,
Since there is no temperature drop or temperature unevenness of the developer, there is an advantage that spray development or paddle development can be performed satisfactorily and stably without causing unevenness in development. In addition, it has remarkable practical effects such as easy use in terms of safety, storability and workability.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平4−133062(JP,A) 特開 昭58−127924(JP,A) 特開 昭58−223149(JP,A) 特開 平6−282081(JP,A) 特開 平7−20639(JP,A) (58)調査した分野(Int.Cl.7,DB名) G03F 7/32 G03F 7/027 514 H01L 21/027 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-133062 (JP, A) JP-A-58-127924 (JP, A) JP-A-58-223149 (JP, A) JP-A-6-127149 282081 (JP, A) JP-A-7-20639 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G03F 7/32 G03F 7/027 514 H01L 21/027
Claims (1)
量%と、沸点が100〜300℃、引火点が1気圧で2
1℃以上のエステル5〜30重量%と、水5重量%以上
10重量%未満とからなることを特徴とする感光性ポリ
イミド前駆体用現像液。1. A dipolar aprotic polar solvent of 60 to 85% by weight, a boiling point of 100 to 300 ° C. and a flash point of 1 atm.
A developer for a photosensitive polyimide precursor , comprising 5 to 30% by weight of an ester at 1 ° C or more and 5% to less than 10% by weight of water.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6133194A JP3358280B2 (en) | 1994-03-30 | 1994-03-30 | Developer for photosensitive polyimide precursor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6133194A JP3358280B2 (en) | 1994-03-30 | 1994-03-30 | Developer for photosensitive polyimide precursor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07271053A JPH07271053A (en) | 1995-10-20 |
JP3358280B2 true JP3358280B2 (en) | 2002-12-16 |
Family
ID=13168055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6133194A Expired - Fee Related JP3358280B2 (en) | 1994-03-30 | 1994-03-30 | Developer for photosensitive polyimide precursor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3358280B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140103845A (en) | 2013-02-18 | 2014-08-27 | 도오꾜오까고오교 가부시끼가이샤 | Developing solution and development processing method of photosensitive resin composition |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3366859B2 (en) * | 1998-03-05 | 2003-01-14 | 日立化成デュポンマイクロシステムズ株式会社 | Developer for photosensitive polyimide precursor and pattern manufacturing method using the same |
GB9826457D0 (en) * | 1998-12-03 | 1999-01-27 | Agfa Gevaert Ltd | Development of radiation sensitive compositions |
-
1994
- 1994-03-30 JP JP6133194A patent/JP3358280B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140103845A (en) | 2013-02-18 | 2014-08-27 | 도오꾜오까고오교 가부시끼가이샤 | Developing solution and development processing method of photosensitive resin composition |
US9891527B2 (en) | 2013-02-18 | 2018-02-13 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution and development processing method of photosensitive resin composition |
Also Published As
Publication number | Publication date |
---|---|
JPH07271053A (en) | 1995-10-20 |
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