JP3353053B2 - Method of manufacturing cooling component for semiconductor and method of manufacturing cooling component for semiconductor laser - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a cooling component for a semiconductor and a method for manufacturing a cooling component for a semiconductor laser, for example, for efficiently manufacturing a semiconductor which generates a large amount of Joule heat, such as a high power semiconductor laser diode. The present invention relates to a method for manufacturing a cooling component to be cooled.

[0002]

2. Description of the Related Art Xenon lamps, high-output mercury lamps and the like have conventionally been used for pumping solid-state lasers. However, recently, high-power semiconductor laser diodes that are small and have high pumping efficiency have been developed. When such a high-power semiconductor laser diode is operated, a large amount of Joule heat is emitted from a semiconductor laser bar that is a semiconductor laser diode array. A cooling module is used as a device for absorbing the Joule heat to cool the semiconductor laser bar.

Generally, a heat sink is widely used for a cooling module for a high-power semiconductor laser. By the way, since it is necessary to obtain the maximum cooling effect in a limited space, many heat sinks having a structurally complicated shape such as providing a large number of cooling fins are expensive. .

[0004]

As a substitute for a heat sink, a flow path is formed in a copper-based thin plate by chemical etching, the copper-based thin plate is laminated, and the copper-based thin plate is bonded by diffusion bonding, and cooling water is provided inside. In some cases, a cooling component provided with a flow path is provided, and cooling water is caused to flow through the flow path to obtain a cooling effect of the semiconductor disposed on the copper-based thin plate.

[0005] In such a cooling component, about 1 is required for diffusion bonding.
It requires heat treatment at a high temperature of 000 ° C, and is liable to be deformed by heat. In addition, as a result of the heat treatment at this temperature, annealing at the time of cooling to room temperature results in no flatness and no hardness. In many cases, the assembly will be hindered.

When laminating and joining copper-based thin plates having the above-mentioned flow channels, there is also a method in which a silver solder is sandwiched between joining surfaces, and the copper plates having the flow channels are laminated and bonded by brazing. In this case, unless the silver brazing sheet is processed according to the shape of the flow path for the cooling water, the silver brazing flows into the flow path during the heat treatment and fills the flow path, so that the required cooling effect cannot be expected.
In addition, the silver brazing itself cannot be made thin because it is hard, and a punching die is required when punching in accordance with the flow path, which is expensive. Processing the silver solder itself according to the flow path not only requires an expensive mold,
Extremely difficult because of the hardness.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and to manufacture the heat sink at a lower cost than the heat sink having a structurally complicated structure, and to perform the bonding process at a lower temperature than the diffusion bonding of a copper-based thin plate. It is an object of the present invention to provide a method for manufacturing a cooling component for a semiconductor and a method for manufacturing a cooling component for a semiconductor laser.

[0008]

The above object can be attained by the invention described in the claims of the present invention as described below. (1) In the method of manufacturing a cooling component for a semiconductor according to the first aspect, at least three copper-based metals having grooves or holes formed therein.
Internal cooling is achieved by laminating metal sheets and joining them together.
A method for manufacturing cooling components for semiconductors that allows flowing water
At least, of the copper-based metal sheets
It is plated with metal to make copper eutectic alloy on a surface of at least the junction of one of the copper-based metal sheet, the other copper-based metal thin
It is characterized by being joined to a plate .

(2) In the method for manufacturing a cooling part for a semiconductor laser according to the second aspect, the small number of grooves and holes are formed.
Laminate at least three copper-based metal sheets and join them together.
Semiconductor laser that allows cooling water to flow inside
Copper joined together in the method of manufacturing cooling parts for the
Of at least one of the copper-based metal sheets
At least the surface to be joined is plated with a metal that forms a eutectic alloy with copper, and is joined to the other copper-based thin metal plate .

As a result, the following effects are obtained. (1) Since bonding is performed by plating a metal that forms a eutectic alloy with copper on the bonding surface, bonding can be performed at a lower temperature than conventional diffusion bonding of copper-based metal, there is no deformation after heat treatment, and cooling is performed. Subsequent handling, such as mounting the body, becomes very easy.
Moreover, since the silver solder does not flow into the flow path, the cooling effect can be improved.

(2) Since there is no blockage of the flow path due to the inflow of the silver solder into the flow path, the cooling effect can be improved, and the semiconductor laser having a large calorific value can be effectively cooled.

[0012]

1 to 3 show an embodiment of the present invention.
It will be explained based on the following. 1A and 1B are diagrams illustrating an embodiment of the present invention, wherein FIG. 1A is an explanatory diagram of an upper plate, a middle plate, and a lower plate, FIG. 1B is an explanatory diagram of a stacked state of these plates, and FIG. 2 is an explanatory view of a flow path, and FIG. 3 is an explanatory view of a middle plate.

In the figure, 1 is an upper plate, 2 is a middle plate, 3 is a lower plate, 4 is a semiconductor laser bar, 5 is a first channel hole, 6 is a second channel hole, 7-1 and 7-2. ... are narrow grooves formed in the upper plate, 8-1 and 8-2 are small holes formed in the middle plate, 9
-1, 9-2... Are narrow grooves formed in the lower plate, 10-
1, 10-2... Are narrow groove partition portions, 11-1, 11-2.
... are middle grooves, 12-1, 12-2 ... are middle groove partitioning parts, 13-1, 13-2 ... are confluence grooves, 14-1, 1
4-2... Are merging groove partitioning portions, 15 is a cooling groove portion, 16 is a row of small holes, 17 is a cooling groove portion, and 20 is a cooling component.

The upper plate 1 is for cooling a semiconductor body to be cooled such as a semiconductor laser bar 4 on its surface, and has a cooling groove formed on its back surface as shown in FIG. The cooling water is allowed to flow through the cooling water, and is made of copper such as copper-free copper.

The middle plate 2 connects the cooling groove formed in the upper plate 1 with the cooling groove formed in the lower plate 3.
As shown in FIG. 3, many small holes 8-1, 8-2, 8-3.
Are formed to communicate the cooling grooves of the upper plate 1 with the cooling grooves formed in the lower plate 3. The middle plate 2 is made of copper, such as copper-free copper, like the upper plate 1.

The lower plate 3, together with the upper plate 1 and the middle plate 2, constitutes a flow path of cooling water. As shown in detail in FIG. 2, a cooling groove is formed, through which cooling water flows. The upper plate 1 is made of copper such as non-oxidized copper. The lower plate 3 has the same configuration as the upper plate 1.

Each of the upper plate 1, the middle plate 2 and the lower plate 3 is provided with a first channel hole 5 and a second channel hole 6. The semiconductor laser bar 4 is a plurality of semiconductor laser diode rows that output laser light in the same direction, and is used, for example, for exciting a solid-state laser.

As shown in FIG. 1, the first channel hole 5 is formed in the cooling groove formed in the upper plate 1 and in the middle plate 2 by, for example, flowing cooling water from below to above in the direction of the arrow. The cooling water flows through the small holes 8. The inflowing cooling water flows through the cooling groove formed in the lower plate 3, flows downward from the top through the second water channel hole 6, and flows out as shown in the arrow direction shown in FIG. 1. As shown in FIG. 1C, the narrow grooves 7-1, 7-2,.
Of the middle plate 2 are small holes 8-1, 8-2,.
, 8-3..., The cooling water flows in this manner.

Since the cooling groove formed on the upper plate 1 and the cooling groove formed on the lower plate 3 have the same structure, the details of the cooling groove on the lower plate 3 will be described with reference to FIG. The lower plate 3 has a plurality of narrow grooves 9-1, 9-2, 9-3,
9-4... Are narrow groove partition portions 10-1, medium groove partition portions 12-
1, narrow groove partitioning section 10-2, merging groove partitioning section 14-1 ...
And the like.

The narrow grooves 9-1 and 9-2 are provided in the narrow groove partitioning section 10-1.
To form the middle groove 11-1 and the narrow grooves 9-3 and 9-3
-4 joins at the tip of the narrow groove partitioning portion 10-2 to form a middle groove 11-2.
Is configured. Then, the middle grooves 11-1 and 11-2 join at the tip of the middle groove partitioning portion 12-1 to form a joining groove 13-1.
Thus, the confluence grooves 13-1, 13-2,... Are configured. .. Are connected to the first channel hole 5.

As described above, the upper plate 1 and the lower plate 3 have the same configuration, and the upper plate 1 shown in FIG.
In the above, each groove and partition described for the lower plate 3 are similarly configured. However, since the directions of the upper plate 1 and the lower plate 3 are opposite, each groove and partition portion of the upper plate 1 in FIG. 1 (A) exist at a position shown by a cooling groove portion 15 shown by a dotted line in FIG. I do.

.., The middle groove 11
-1, 11-2,..., Merging grooves 13-1, 13-2,.
・ The depth of 1 / th of the thickness of the thin plate that constitutes the upper plate 1 and the lower plate 3
It is formed in a state slightly exceeding 2 by, for example, a chemical etching method. At this time, the first water channel hole 5 and the second
The water channel hole 6 can also be formed simultaneously with each of the grooves by chemically etching the thin plate from both sides.

Small holes 8-1, 8-formed in the intermediate plate 2.
2 can also be formed simultaneously with the first channel hole 5 and the second channel hole 6 in the state shown in FIG. 1C by chemical etching the thin plate from both sides. . Thus, as shown in FIG. 1A, the upper plate 1, the middle plate 2, and the lower plate 3 are obtained.

Then, both surfaces of the middle plate 2 are plated with a metal for forming a eutectic alloy with the copper thin plate, for example, silver. Then, the upper plate 1, the middle plate 2, and the lower plate 3 are laminated with the silver-plated middle plate 2 interposed therebetween, and an overlap is placed thereon, followed by thermocompression bonding in a vacuum furnace.

As a result, the plated silver gradually diffuses into the contacting copper, and the melting point decreases when the silver comes close to the component of the silver solder, so that the adhesive portion becomes liquid phase and the upper plate 1,
The middle plate 2 and the lower plate 3 are bonded. In this way, the bonding can be performed at the same temperature of 800 to 820 ° C. as the silver brazing without using the silver brazing.

After the cooling component 20 is constructed in this manner, the semiconductor laser bar 4 is placed at a predetermined position from the cooling component 20, and the semiconductor laser bar 4 can be cooled strongly by flowing cooling water.

In FIG. 1A, the semiconductor laser bar 4 is shown to be fixed before the upper plate 1, the middle plate 2, and the lower plate 3 are stacked and fixed. This shows that it is placed only on the plate 1.

Of course, this cooler is not only used for cooling the semiconductor laser bar, but can also be cooled by placing a semiconductor chip or the like on the flat portion of the upper plate 1. The cooling component 20 shown in FIG. 1B can be efficiently produced by the method shown in FIG.

A plurality of patterns of the upper plate 1 having the cooling grooves 15 are formed in the copper thin plate 31 by chemical etching, and a pattern of the middle plate 2 having the small hole arrays 16 are formed in the copper thin plate 32 by chemical etching. Then, a large number of patterns of the lower plate 3 having the cooling grooves 17 are formed on the copper thin plate 33 by chemical etching.

Then, after both surfaces of the copper thin plate 32 on which the pattern of the intermediate plate 2 is formed are silver-plated, the copper thin plates 31, 32, 33 are laminated. At this time, the pin holes 34-1, 34-2, 34 are formed in the thin plates 31, 32, 33.
Since -3 are formed, they are passed through pins and aligned and laminated to form a laminated body 35.

Then, the three thin plates 31, 32, 33
Is temporarily fixed by laser welding, a weight is placed on this, and it is heated using a vacuum furnace, and the three thin plates 31, 32, 33 are pressed. As a result, as described above, the silver plated on the thin plate 32 gradually diffuses into the copper of the thin plate 31 or 33 in contact and the copper of the thin plate 32 itself. The phases are phased and the thin plates 31, 32, and 33 are bonded.

After bonding as described above, the cooling component and the surplus portion are separated and removed, and the cooling component 20 is obtained. After that, the semiconductor laser bar 4 is placed. The semiconductor laser bar 4 to which the cooling component 20 is attached in this manner.
As shown in FIG. 5, the solid-state laser 40 is arranged so that the laser light excites the solid-state laser 40.

The output of the semiconductor laser diode can be efficiently pumped because of good matching with the solid-state laser. In the above description, an example was described in which oxygen-free copper was used as the copper-based metal constituting the thin plate. However, the present invention is not limited to this, and beryllium copper, brass, phosphor bronze, and the like may be used. Nickel white, white copper, or the like can be used.

Although an example of silver plating has been described as the plating of a metal for forming a eutectic alloy with copper, the present invention is not limited to this, of course, and the present invention is not limited thereto. And the like, and tin plating, gold plating, gadmium plating or the like can be used as other components.

Although an example has been described in which metal plating for forming a eutectic alloy with copper is applied to both surfaces of the middle plate, the present invention is not limited to this, and the cooling grooves of the upper plate and the lower plate are formed. Can be applied to the finished surface. At this time, plating is not easily applied to the groove portion, and is easily formed on a planar portion or a partition portion. Further, in the present invention, the above-mentioned bonding may be performed by forming a metal plating for forming a eutectic alloy with copper on both surfaces of the middle plate and the surfaces of the upper plate and the lower plate where the respective cooling grooves are formed.

[0036]

The present invention has the following effects. (1) Since the bonding surface is plated with a metal that forms a eutectic alloy with a copper-based metal and bonded, the bonding can be performed at a lower temperature than conventional diffusion bonding of a copper-based metal. Can be manufactured at a low temperature, there is no deformation after heat treatment, and it is possible to obtain a cooling component that can be easily handled afterward, such as mounting a cooled object. Moreover, since the silver solder does not flow into the flow path of the cooling fluid, the cooling effect of the cooling component can be improved.

(2) Since there is no blockage of the flow path due to the flow of the silver solder into the flow path of the cooling fluid, the cooling effect can be improved, and the semiconductor laser bar having a large amount of heat can be effectively cooled.

[Brief description of the drawings]

FIG. 1 is a diagram showing an embodiment of the present invention.

FIG. 2 is an explanatory diagram of an upper plate and a lower plate having a flow path.

FIG. 3 is an explanatory view of a middle plate.

FIG. 4 is an explanatory view of a manufacturing state.

FIG. 5 is an explanatory diagram of a use state of the solid-state laser.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Upper plate 2 Middle plate 3 Lower plate 4 Semiconductor laser bar 5 First channel hole 6 Second channel hole 7 Narrow groove 8 Small hole 9 Narrow groove 10 Narrow groove partitioning part 11 Medium groove 12 Medium groove partitioning part 13 Merging groove 14 Junction groove partition 15 Cooling groove 16 Small hole row 17 Cooling groove 20 Cooling component

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuji Nishikawa 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fujitsu Limited (56) References JP-A-8-181392 (JP, A) Hei 2-66987 (JP, A) Japanese Patent Laid-Open No. Hei 10-209531 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 JICST file (JOIS)

Claims (2)

(57) [Claims] At least three sheets of copper having grooves and holes formed therein
The interior is made by stacking and joining together
Of cooling components for semiconductors that allow cooling water to flow through
Method , at least one of the copper-based metal sheets to be joined together
A method of manufacturing a cooling component for a semiconductor, characterized in that at least a surface to be joined of a copper-based metal sheet is plated with a metal for forming an eutectic alloy with copper, and then joined to the other copper-based metal sheet . 2. At least three sheets of copper having grooves and holes formed therein.
The interior is made by stacking and joining together
Of cooling components for semiconductor lasers that allow cooling water to flow through
In the manufacturing method , at least one of the copper-based metal sheets bonded to each other
A method for manufacturing a cooling component for a semiconductor laser, comprising: plating at least a surface of a copper-based metal sheet to be joined with a metal that forms an eutectic alloy with copper; and joining the copper-based metal sheet to another copper-based metal sheet .