JP2004064015A - Thermoelectric conversion device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thermoelectric conversion device which has high flexibility in designing a manufacturing line, at a good productivity. <P>SOLUTION: A lower-stage side chip unit 20 has, on an insulating substrate 1, multiple P-type semiconductor chips 4 and N-type semiconductor chips 5 provided side by side, which are connected in series with multiple electrodes 2 and 7. An upper-stage side chip unit 21 has, on an insulating substrate 15, multiple P-type semiconductor chips 11 and N-type semiconductor chips 12 provided side by side, which are connected in series with multiple electrodes 9 and 14. A substrate unit 22 has an elastic film 23 formed on both surfaces of an insulating substrate 8. The substrate unit 22 is sandwiched by the lower-stage side chip unit 20 and the upper-stage side chip unit 21 to press-fit the electrodes 7 and 9 on the elastic film 23 of the substrate unit 22. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
[Industrial applications]
The present invention relates to a method for manufacturing a thermoelectric converter used as an industrial or consumer electronic cooling device or a thermoelectric generator, and a thermoelectric converter.
[0002]
[Prior art]
FIG. 12 is a cross-sectional view of a conventional thermoelectric conversion module having a cascade structure. As shown in the figure, a lower heat radiation electrode 2 is provided on a heat radiation side insulating substrate 1, and a number of lower P-type semiconductor chips 4 and lower N-type semiconductor chips 5 are provided thereon via a solder layer 3 thereon. It is juxtaposed. A lower heat absorbing electrode 7 is provided on the lower semiconductor chips 4 and 5 via a solder layer 6, and an intermediate insulating substrate 8 is provided thereon.
[0003]
Further, an upper heat dissipation electrode 9 is provided on the intermediate insulating substrate 8, and a number of upper P-type semiconductor chips 11 and upper N-type semiconductor chips 12 are arranged side by side with a solder layer 10 interposed therebetween. . An upper heat absorbing electrode 14 is provided on the upper semiconductor chips 11 and 12 via a solder layer 13, and a heat absorbing insulating substrate 15 is provided thereon. Reference numeral 16 denotes a lower lead body, and reference numeral 17 denotes an upper lead body.
[0004]
[Problems to be solved by the invention]
In the conventional method of manufacturing the thermoelectric conversion module, since the components from the heat-radiating insulating substrate 1 to the heat-absorbing insulating substrate 15 are sequentially stacked, the manufacturing line becomes long, and the design margin of the manufacturing line is low. And the production efficiency is poor.
[0005]
An object of the present invention is to provide a method of manufacturing a thermoelectric conversion device and a thermoelectric conversion device that solve the above-mentioned drawbacks of the conventional technology, have a high design margin of a production line, and have high production efficiency.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a first aspect of the present invention provides a chip unit including a large number of P-type semiconductor chips and a large number of N-type semiconductor chips arranged in parallel on an insulating substrate and connected in series with a large number of electrodes. A substrate unit formed by forming an elastic film made of, for example, a silicone resin in which a filler is dispersed on one side of the substrate is overlapped, and each electrode facing the elastic film is pressed on the elastic film of the substrate unit. It is characterized by the following.
[0007]
In order to achieve the above object, a second aspect of the present invention is to provide a lower chip unit comprising a large number of P-type semiconductor chips and a large number of N-type semiconductor chips arranged in parallel on an insulating substrate and connected in series with a large number of electrodes. An upper chip unit composed of a number of P-type semiconductor chips and a number of N-type semiconductor chips arranged in parallel on an insulating substrate and connected in series by a number of electrodes, and an elastic film formed on both surfaces of the insulating substrate. Board unit,
The substrate unit is sandwiched between the lower chip unit and the upper chip unit, so that the electrodes facing the elastic coating are pressed on the elastic coating of the substrate unit.
[0008]
To achieve the above object, a third aspect of the present invention relates to a lower chip unit comprising a large number of P-type semiconductor chips and a large number of N-type semiconductor chips arranged in parallel on an insulating substrate and connected in series with a large number of electrodes. An upper chip unit composed of a number of P-type semiconductor chips and a number of N-type semiconductor chips arranged in parallel on an insulating substrate and connected in series with a number of electrodes, and a number of P-type and N-type semiconductor chips. An intermediate chip unit configured in parallel and connected in series with a large number of electrodes, a first substrate unit and a second substrate unit configured by forming elastic coatings on both surfaces of an insulating substrate,
A first substrate unit, an intermediate chip unit, a second substrate unit, and an upper chip unit are sequentially stacked and sandwiched on the lower chip unit, so that the first substrate unit, the intermediate chip unit, the second substrate unit, and the upper chip unit are placed on the elastic coating of the first substrate unit and the second substrate unit Each electrode facing the elastic coating is pressure-bonded.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, an embodiment of the present invention will be described with reference to the drawings. 1 to 3 are views for explaining a thermoelectric conversion module according to the first embodiment. FIG. 1 is a cross-sectional view of the thermoelectric conversion module during assembly, and FIG. 2 is a state in which the thermoelectric conversion module has been assembled. FIG. 3 is a perspective view of an intermediate board unit used for the thermoelectric conversion module.
[0010]
In the case of the present embodiment, as shown in FIG. 1, the lower chip unit 20, the upper chip unit 21, and the substrate unit 22 are configured.
[0011]
The lower chip unit 20 includes a plurality of lower radiating electrodes 2 provided on a heat radiating insulating substrate 1, and a plurality of lower P-type semiconductor chips 4 and a lower N type via a solder layer 3 thereon. Semiconductor chips 5 are juxtaposed, and a number of lower heat absorbing electrodes 7 are provided on the lower semiconductor chips 4 and 5 via a solder layer 6.
[0012]
In the upper chip unit 21, a number of upper P-type semiconductor chips 11 and a number of upper N-type semiconductor chips 12 are arranged in parallel on a number of upper heat radiation electrodes 9 via a solder layer 10. A number of upper heat absorbing electrodes 14 are provided on the upper semiconductor chips 11 and 12 via a solder layer 13, and a heat absorbing insulating substrate 15 is provided thereon.
[0013]
The substrate unit 22 has an elastic coating 23 formed on both surfaces of the intermediate insulating substrate 8. In the case of the present embodiment, as shown in FIG. 3, the elastic coating 23 is applied uniformly over substantially the entire surface of the intermediate insulating substrate 8.
[0014]
The lower chip unit 20, the upper chip unit 21, and the substrate unit 22 are separately manufactured, and the upper chip unit 21 is placed on the lower chip unit 20 via the substrate unit 22, as shown in FIG. This completes the assembly of the thermoelectric conversion module having the two-layer cascade structure as shown in FIG. In FIG. 2, 16 is a lower lead body, and 17 is an upper lead body.
[0015]
By crimping the lower chip unit 20 and the upper chip unit 21 with the substrate unit 22 interposed therebetween, each lower heat absorbing electrode 7 of the lower chip unit 20 comes into close contact with the lower elastic coating 23 of the substrate unit 22, Each upper heat radiation electrode 9 of the upper chip unit 21 is in close contact with the upper elastic coating 23 of the substrate unit 22.
[0016]
In the above description, the lower-stage heat radiation electrode 2, the solder layer 3, the lower-stage semiconductor chips 4, 5, the solder layer 6, and the lower-stage heat-absorbing electrode 7 are sequentially assembled on the heat-radiation-side insulating substrate 1, and the lower-stage chip unit 20 is assembled. The upper chip unit 21 is formed by sequentially assembling the solder layer 10, the upper semiconductor chips 11, 12, the solder layer 13, the upper heat absorbing electrode 14, and the heat absorbing insulating substrate 15 on the upper heat radiation electrode 9. The same assembly is manufactured by sequentially assembling the heat dissipation electrode, the solder layer and the P-type, the N-type semiconductor chip, the solder layer and the heat-absorbing electrode, and joining the heat dissipation side insulating substrate 1 to the assembly by soldering or the like. The upper chip unit 21 may be formed by joining the heat-absorbing insulating substrate 15 to the assembly by soldering or the like.
[0017]
4 and 5 are views for explaining the thermoelectric conversion module according to the second embodiment. FIG. 4 is a cross-sectional view of the thermoelectric conversion module during assembly, and FIG. 5 is a state in which the thermoelectric conversion module has been assembled. It is sectional drawing.
[0018]
In the case of the present embodiment, as shown in FIG. 4, the thermoelectric conversion module includes a board unit 22 and a chip unit 24.
[0019]
The substrate unit 22 has an elastic coating 23 formed on one surface of the heat-dissipating insulating substrate 1. In the case of the present embodiment, the elastic coating 23 is printed and formed in a pattern similar to the arrangement pattern of the heat radiation side electrodes 9 described later.
[0020]
In the chip unit 24, a large number of P-type semiconductor chips 11 and N-type semiconductor chips 12 are arranged on the heat radiation electrodes 9 via a solder layer 10. A heat absorbing electrode 14 is provided on the semiconductor chips 11 and 12 via a solder layer 13, and a heat absorbing side insulating substrate 15 is provided thereon. Reference numeral 16 shown in FIG. 5 is a lead body.
[0021]
By pressing the chip unit 24 onto the board unit 22, each heat radiation electrode 9 of the chip unit 24 comes into close contact with the elastic coating 23 of the board unit 22, and the assembling of the thermoelectric conversion module as shown in FIG. 5 is completed. .
[0022]
6 and 7 are views for explaining the thermoelectric conversion module according to the third embodiment. FIG. 6 is a cross-sectional view of the thermoelectric conversion module during assembly, and FIG. 7 is a state in which the thermoelectric conversion module has been assembled. It is sectional drawing.
[0023]
In the case of the present embodiment, as shown in FIG. 6, the lower chip unit 20, the upper chip unit 21, the first substrate unit 22 a, the second substrate unit 22 b, and the intermediate chip unit 25 are configured. .
[0024]
The lower chip unit 20, the upper chip unit 21, the first substrate unit 22a, and the second substrate unit 22b are the same as the lower chip unit 20, the upper chip unit 21, and the substrate unit 22 described in the first embodiment. Therefore, their description is omitted.
[0025]
In the intermediate chip unit 25, a number of intermediate P-type semiconductor chips 28 and intermediate N-type semiconductor chips 29 are provided side by side on an intermediate heat radiation electrode 26 via an intermediate solder layer 27 without using an insulating substrate. An intermediate heat absorbing electrode 31 is provided on 28 and 29 via an intermediate solder layer 30.
[0026]
As shown in FIG. 6, the first substrate unit 22a, the intermediate chip unit 25, the second substrate unit 22b, and the upper chip unit 21 are sequentially stacked on the lower chip unit 20, thereby obtaining a three-layer structure as shown in FIG. The assembly of the thermoelectric conversion module having the layer cascade structure is completed. In FIG. 7, reference numeral 32 denotes an intermediate layer lead body. In the case of a cascade structure of four or more layers, the numbers of the substrate units 22 and the intermediate chip units 25 may be increased according to the number of layers.
[0027]
Also in this embodiment, the same assembly is manufactured by sequentially assembling the heat radiation electrode, the solder layer and the P-type, the N-type semiconductor chip, the solder layer and the heat absorption electrode, and the heat radiation side insulating substrate 1 is soldered to the assembly by soldering or the like. The bonded unit is referred to as a lower chip unit 20, the heat absorbing insulating substrate 15 bonded to the assembly by soldering or the like is referred to as an upper chip unit 21, and the integrated unit having nothing bonded is referred to as an intermediate chip unit 25. You can also.
[0028]
FIG. 8 is a cross-sectional view illustrating a state where assembly of the thermoelectric conversion module according to the fourth embodiment is completed. In the case of the present embodiment, a lower chip including a heat-dissipating insulating substrate 1, a lower heat-dissipating electrode 2, a solder layer 3, lower semiconductor chips 4, 5, a solder layer 6, a lower heat-absorbing electrode 7, and a lower lead body 16. Unit 20 and upper chip unit 21 including heat absorbing insulating substrate 15, upper heat absorbing electrode 14, solder layer 13, upper semiconductor chips 11 and 12, solder layer 10, upper heat dissipating electrode 9, and upper lead body 17. Are arranged vertically.
[0029]
With this structure, two chip units each including an insulating substrate, a heat radiation electrode, a solder layer, P-type and N-type semiconductor chips, a solder layer, a heat absorption electrode, and a lead body are manufactured, and the substrate unit 22 is interposed therebetween. By disposing the two chip units at target positions as shown in FIG. 8, the assembly of the thermoelectric conversion module having the two-layer cascade structure is completed. FIG. 9 is a cross-sectional view illustrating a state where assembly of the thermoelectric conversion module according to the fifth embodiment is completed. In the case of the present embodiment, the lower chip unit 20 and the upper chip unit 21 are electrically connected by a conductor 33 made of, for example, a metal clip or a lead wire to form a series circuit.
[0030]
In the above embodiments, the insulating substrates 1, 8, and 15 are made of, for example, alumina ceramic, aluminum nitride, or a metal such as copper or aluminum having an insulating layer formed of an oxide or the like on the surface.
[0031]
For the solder layers 3, 6, 10, 13, 27, and 30, for example, eutectic solder of tin and lead is used.
[0032]
The semiconductor chips 4, 5, 11, 12, 28 and 29 include Bi-Te, Pb-Te, Zn-Sb, Fe-Si, Mn-Si, Si-Ge, and Co-Sb. A system or the like is used. In the case of a cascade structure, the upper and lower materials may be the same or different.
[0033]
The electrodes 2, 7, 9, 14, 26, 31 are, for example, nickel-plated copper thin plates.
[0034]
For the elastic coating 23, an adhesive such as a silicone adhesive, an epoxy adhesive, a polyamide adhesive, a diene rubber adhesive, a diene rubber adhesive, or a gel agent such as a silicone gel is used as a base material. In order to increase the thermal conductivity, a filler having a higher thermal conductivity than the base material is mixed in an appropriate amount. The thickness of the elastic coating 23 is suitably 3 to 50 μm.
[0035]
The hardness (JISA) of the elastic coating 23 made of a silicone-based adhesive containing a filler is 65 to 100, the tensile strength is 40 to 80 [kgf / cm ² ], the elongation is 45 to 130 [%], and the heat conduction is performed. The rate is 2 × 10 ^{−3 to} 5 × 10 ⁻³ [cal / cm · sec · ° C.].
[0036]
FIG. 10 is a cross-sectional view of a thermoelectric conversion device for an electronic refrigerator using any one of the thermoelectric conversion modules according to the first to fifth embodiments. The above-mentioned thermoelectric conversion module 42 is in close contact with the bottom (rear) back surface of the box-shaped first heat conductor 40 constituting the storage portion of the electronic refrigerator via a second heat conductor 41 made of aluminum or the like. The heat transfer medium circulation jacket 43 is joined to the outside thereof.
[0037]
The heat transfer medium circulation jacket 43 has a plate-shaped heat exchange base 44 joined to the heat-dissipation-side insulating substrate 1 of the thermoelectric conversion module 42, and the first heat exchange base 44 extends from the periphery toward the second heat conductor 41 side. The frame 45 extends. The first frame body 45 is a hollow body having an open upper part and a lower part. The first frame body 45 has a base end part 46 and an extension part 47 extending upward from the base end part 46, and has a substantially stepped cross-sectional shape. You are. The base end portion 46 is liquid-tightly joined to a peripheral portion of the upper surface of the heat exchange base 44 by an adhesive or a combination of an adhesive and an O-ring.
[0038]
The extending portion 47 is opposed to the peripheral surface of the second heat conductor 41 substantially in parallel, and an adhesive 48 is injected between the two, and the second heat conductor 41 and the first frame 45 are integrally joined. Have been.
[0039]
A plurality of positioning pins 49 are inserted between the peripheral surface of the second heat conductor 41 and the extending portion 47, and the relative position between the second heat conductor 41 and the first frame 45 before the adhesive 48 is completely cured. It prevents the actual displacement. A plurality of reinforcing ribs 50 extending toward the base end 46 are provided integrally outside the extending portion 47 to maintain the rigidity of the first frame 45.
[0040]
A hollow second frame 51 whose lower part is substantially closed is adhered to the periphery of the lower surface of the heat exchange base 44 through an O-ring 52 in a liquid-tight manner. A water supply pipe 53 is provided substantially at the center of the second frame 51, and a drain pipe 54 is provided near the periphery.
[0041]
The dispersing member 55 installed in the hollow portion of the second frame 51 includes a peripheral wall 56, an upper wall 57 connected to the upper end of the peripheral wall 56, and a large number of tubes extending from the upper wall 57 to the heat exchange base 44 side. A nozzle portion 58 is provided, and an injection hole 59 is formed in the nozzle portion 58.
[0042]
By fixing the dispersion member 55 in the second frame 51, a flat first space 60 is formed on the water supply pipe 53 side of the dispersion member 55, and a flat first space 60 is formed on the heat exchange base 44 side of the dispersion member 55. A second space 61 is formed, and a drainage channel 62 that connects the second space 61 and the drain pipe portion 54 is formed.
[0043]
As shown in the drawing, when a heat transfer medium 63 made of pure water or antifreeze is supplied from a central water supply pipe 53, the heat transfer medium 63 spreads all at once in the first space 60, and the heat exchange base 44 from each nozzle 58 (injection hole 59). And vigorously in a substantially vertical direction toward the lower surface. The heat transfer medium 63 that collides with the heat exchange base 44 and removes the heat thereof quickly diffuses in the second space 61 having a narrow gap, and is discharged from the drain pipe 54 through the drain passage 62 to the outside of the system. The discharged heat transfer medium 63 is forcibly cooled by a radiator (not shown), and is sent again to the circulation jacket 43 side by a pump. In FIG. 10, reference numeral 64 denotes a heat insulating layer, and reference numeral 65 denotes an elastic thin film layer made of silicone gel with a filler dispersed therein and having good thermal conductivity.
[0044]
FIG. 11 is a cross-sectional view of a thermoelectric conversion device for power generation using any of the thermoelectric conversion modules according to the first to fifth embodiments. A thermoelectric conversion module 73 is interposed between a first heat conductor 70 made of an aluminum block and a second heat conductor 72 made of aluminum and having many fins 71. By fastening the first heat conductor 70 and the second heat conductor 72 with a plurality of bolts 74 made of synthetic resin, the thermoelectric conversion module 73 is crimped between them.
[0045]
In the thermoelectric conversion device shown in FIGS. 10 and 11, the thermoelectric conversion modules 42 and 73 are mechanically pressed, so that the electrodes 7, 9, 26, and 31 facing the elastic coating 23 on the substrate unit 22 side. The electrodes 7, 9, 26, 31 are positioned so as to bite into each other, and are electrically connected.
[0046]
【The invention's effect】
According to the present invention, the chip unit and the board unit are separately provided in the first and fourth aspects, and the lower chip unit is provided in the second and fifth aspects. In the third and sixth aspects, the upper chip unit and the board unit are separately manufactured, and the lower chip unit, the upper chip unit, the intermediate chip unit, and the board unit are separately manufactured and stacked on each other. By combining them, a thermoelectric conversion device can be easily and efficiently manufactured.
[0047]
Further, since each unit is manufactured individually, there is no need to lengthen the production line of the thermoelectric converter, and the design margin of the production line is high.
[0048]
Furthermore, the electrodes are well pressed on the elastic coating of the substrate unit, and the pressed state is always maintained by the elasticity of the elastic coating, so that the thermal resistance is kept low and excellent thermoelectric conversion characteristics are exhibited. Can be.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a thermoelectric conversion module according to a first embodiment of the present invention during assembly.
FIG. 2 is a cross-sectional view showing a state where the thermoelectric conversion module has been assembled.
FIG. 3 is a perspective view of an intermediate board unit used for the thermoelectric conversion module.
FIG. 4 is a cross-sectional view of a thermoelectric conversion module according to a second embodiment of the present invention during assembly.
FIG. 5 is a cross-sectional view showing a state where the thermoelectric conversion module has been assembled.
FIG. 6 is a cross-sectional view of a thermoelectric conversion module according to a third embodiment of the present invention during assembly.
FIG. 7 is a cross-sectional view showing a state where the assembling of the thermoelectric conversion module is completed.
FIG. 8 is a cross-sectional view showing a state where assembly of a thermoelectric conversion module according to a fourth embodiment of the present invention is completed.
FIG. 9 is a cross-sectional view showing a state where assembly of a thermoelectric conversion module according to a fifth embodiment of the present invention is completed.
FIG. 10 is a cross-sectional view of a thermoelectric conversion device for an electronic refrigerator using the thermoelectric conversion module according to the embodiment of the present invention.
FIG. 11 is a cross-sectional view of a thermoelectric conversion device for power generation using a thermoelectric conversion module according to an embodiment of the present invention.
FIG. 12 is a cross-sectional view of a conventional thermoelectric conversion module.
[Explanation of symbols]
1: heat radiation side insulating substrate, 2: lower heat radiation electrode, 3: solder layer, 4: lower P-type semiconductor chip, 5: lower N-type semiconductor chip, 6: solder layer, 7: lower heat absorption electrode, 8 : Intermediate insulating substrate, 9: upper heat radiation electrode, 10: solder layer, 11: upper P-type semiconductor chip, 12: upper N-type semiconductor chip, 13: solder layer, 14: upper heat absorbing electrode, 15: heat absorption Side insulating substrate, 16: lower lead body, 17: upper lead body, 20: lower chip unit, 21: upper chip unit, 22: substrate unit, 22a: first substrate unit, 22b: second substrate unit , 23: elastic coating, 24: chip unit, 25: intermediate chip unit, 26: intermediate heat dissipation electrode, 27: intermediate solder layer, 28: intermediate P-type semiconductor chip, 29: intermediate N-type semiconductor chip, 30: intermediate solder layer , 31: Medium Heat absorbing electrode, 32: Intermediate layer lead, 33: Conductor, 40: First heat conductor, 41: Second heat conductor, 42: Thermoelectric conversion module, 43: Heat transfer medium circulation jacket, 44: Heat exchange substrate, 45 : First frame, 46: base end, 47: extension, 48: adhesive, 49: positioning pin, 50: reinforcing rib, 51: second frame, 52: O-ring, 53: water supply pipe , 54: drain pipe portion, 55: dispersion plate, 56: peripheral wall, 57: upper wall, 58: nozzle portion, 59: injection hole, 60: first space, 61: second space, 62: drain passage, 63: Heat transfer medium, 64: heat insulation layer, 65: elastic thin film layer, 70: first heat conductor, 71: fin, 72: second heat conductor, 73: thermoelectric conversion module, 74: volt.

Claims (6)

A chip unit in which a number of P-type semiconductor chips and a number of N-type semiconductor chips are juxtaposed on an insulating substrate and connected in series with a number of electrodes;
Manufacturing a thermoelectric conversion device characterized in that a substrate unit formed by forming an elastic coating on one surface of an insulating substrate is superimposed, and each electrode facing the elastic coating is pressed on the elastic coating of the substrate unit. Method. A lower chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
An upper chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
Equipped with a substrate unit configured by forming an elastic coating on both sides of the insulating substrate,
By sandwiching the substrate unit between the lower chip unit and the upper chip unit,
A method of manufacturing a thermoelectric conversion device having a cascade structure, wherein each electrode facing the elastic film is pressure-bonded on the elastic film of the substrate unit. A lower chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
An upper chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
An intermediate chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips in parallel and connecting them in series with a number of electrodes;
A first substrate unit and a second substrate unit each formed by forming an elastic coating on both surfaces of an insulating substrate;
By laminating and sandwiching a first substrate unit, an intermediate chip unit, a second substrate unit and an upper chip unit sequentially on the lower chip unit,
A method of manufacturing a thermoelectric converter having a cascade structure, wherein electrodes facing the elastic coating are pressure-bonded on the elastic coatings of the first substrate unit and the second substrate unit. A chip unit in which a number of P-type semiconductor chips and a number of N-type semiconductor chips are juxtaposed on an insulating substrate and connected in series with a number of electrodes;
A thermoelectric conversion device wherein a substrate unit formed by forming an elastic coating on one surface of an insulating substrate is overlapped, and each electrode facing the elastic coating is pressed on the elastic coating of the substrate unit. A lower chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
An upper chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
Equipped with a substrate unit configured by forming an elastic coating on both sides of the insulating substrate,
By sandwiching the substrate unit between the lower chip unit and the upper chip unit,
A thermoelectric conversion device having a cascade structure, wherein each electrode facing the elastic coating is pressed on the elastic coating of the substrate unit. A lower chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
An upper chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips side by side on an insulating substrate and connecting them in series with a number of electrodes;
An intermediate chip unit configured by arranging a number of P-type semiconductor chips and N-type semiconductor chips in parallel and connecting them in series with a number of electrodes;
A first substrate unit and a second substrate unit each formed by forming an elastic coating on both surfaces of an insulating substrate;
By laminating and sandwiching a first substrate unit, an intermediate chip unit, a second substrate unit and an upper chip unit sequentially on the lower chip unit,
A thermoelectric conversion device having a cascade structure, wherein each electrode facing the elastic coating is pressure-bonded on the elastic coating of the first substrate unit and the second substrate unit.

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