JP3344017B2 - Method for joining metal and organic matter and method for manufacturing wiring board - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for bonding a metal and an organic substance, and a method for manufacturing a wiring board obtained by using the bonding method. And the bonding of metal and coating organic matter in painting. In particular, it is useful for ensuring the bonding reliability between the conductor metal and the organic insulator in the wiring board.

[0002]

2. Description of the Related Art In order to strongly bond a metal and an organic substance, there are used an organic substance having a high bonding strength, and a method of roughening the metal surface to increase the bonding strength by a rivet effect. For example, in the production of copper-clad laminates for wiring boards, a relatively high bonding strength can be obtained by using an epoxy resin or the like with a high bonding strength and using electrolytic copper foil having many fine irregularities on the surface. Have been.

In the case of a multilayer wiring board, it is necessary to bond the surface of a copper foil whose inner layer material is not roughened to an organic insulator. Therefore, surface treatment of copper is required, and there are mechanical methods and chemical methods. In general, a method called blackening treatment (black oxide) in which copper is oxidized by sodium chlorite in an alkaline solution to form copper oxide microprojections on the surface is often used, and the copper foil and the prepreg resin are used. High bonding force can be obtained.

[0004] Also, a method of increasing the bonding strength without oxidizing the surface of copper has been studied. JP-A-56-118853
In No. 1, a silane compound is coated on a roughened surface of an electrolytic copper foil in a 1 to 20% aqueous solution of a silane coupling agent or an ethanol solution, and then dried at 50 to 150 ° C. to remove a solvent. A silane compound is present between the metal and the organic substance to improve the bonding strength. Also, JP-A-5-25044 and JP-A-5-2504
In No. 5, a hydroxyl group is provided on the surface of the copper circuit, and then a silane coupling agent is applied to increase the bonding strength.

[0005]

However, the above-described blackening treatment has a drawback that copper oxides, particularly cupric oxide, are easily dissolved in an acid, while high bonding strength between a copper foil and an organic substance can be obtained. . For this reason, in manufacturing a wiring board, there is a step of drilling and forming a through hole after forming a through hole in order to form a through hole. At this time, a problem of a haloing phenomenon occurs.

FIG. 7 shows this phenomenon. The haloing phenomenon is caused by immersing the copper oxide layer in the cross section of the copper circuit exposed on the inner wall of the through hole by immersion in various acidic plating solutions. Is what is done. As shown in FIG. 7, the acid penetrates the interface between the blackened surface 3 of the inner layer copper circuit 2 and the insulating resin 4 from the inner periphery of the through hole 1, and the blackened layer in this portion is dissolved, so that bonding is performed. Power is impaired.

To prevent the haloing phenomenon, there is a method of reducing copper oxide to copper, which is reported in JP-A-3-268389 and JP-A-3-283494. However, all of these processes are complicated and cause corrosion and reduction unevenness due to the residue of the chemical solution, so that a necessary bonding force may not be obtained.

Japanese Patent Application Laid-Open No. 56-118853 discloses a method in which a silane compound solution is coated to increase the bonding strength without oxidizing the copper surface. Further, Japanese Patent Laid-Open No. 5-2
Japanese Patent No. 5044 and Japanese Patent Application Laid-Open No. 5-25045 disclose a method in which a hydroxyl group is provided on the surface of a copper circuit and then a silane coupling agent is applied to increase the bonding strength. However, these methods also have complicated processes, are likely to cause poor bonding due to coating unevenness and residual chemical solution after drying, and still have the same problems, so that they cannot be said to be at a satisfactory level in this application field. .

The present invention has been made in view of the above points, and does not cause the above-described problems such as the haloing phenomenon, corrosion due to chemical solution residue, and defective bonding, and has high reliability by a simple process. It is intended to provide a bonding method for bonding a conductive metal and an organic insulator by the method and a wiring board having high bonding reliability.

[0010]

According to the method for bonding a metal and an organic substance of the present invention, a bonding promoting layer is formed on the surface of a metal or an organic substance by vapor phase synthesis, and then the organic substance is added to the metal or the metal is applied to the organic substance. Are joined. Further details will be described below.

As the metal, a solid metal in a used state, for example, copper, nickel, gold, aluminum, iron or stainless steel is used. A bonding promoting layer is formed on these surfaces by vapor phase synthesis, and organic substances such as epoxy resin and polyester resin are bonded. Further, a precipitate is also used as a metal. For example, a plating deposit containing copper, nickel, gold, or the like as a main component and a catalyst metal for depositing a main component such as palladium, platinum, phosphorus, or boron as a subcomponent is also used. In these, after a bonding promoting layer is formed by vapor phase synthesis on an organic substance such as a molded article of a synthetic resin, plating is deposited on the surface thereof and bonded.

By performing an activation treatment such as forming irregularities on the surface of the above-mentioned metal or organic material and removing a contaminant layer and an oxide layer on the surface, the bonding promoting layer can be firmly bonded to the metal surface. This activation process is performed by performing mechanical polishing such as buffing, chemical processing such as soft etching, and gas phase processing such as plasma processing and ion beam processing.

The material for forming the film of the bonding promoting layer is an organic silicon-based material .
Compounds are used. As the organic silicon compound gamma chromatography aminopropyltriethoxysilane, gamma chromatography glycidoxy silane, N over β over aminoethyl over gamma over-aminopropyltrimethoxysilane, N-phenyl-gamma over aminopropyltrimethoxysilane, gamma chromatography mercaptopropyltrimethoxysilane Methoxysilane, γ-glycidoxypropylmethyldiethoxysilane, vinyltriethoxysilane and γ
-Use any of methacryloxypropyltrimethoxysilane.

In the gas phase synthesis, an organosilicon compound is vaporized.
And polymerized on an organic material or metal to form a bonding promoting layer. At this time, the organic substance or metal may be heated. When the organic silicon-based compound is vaporized , hydrogen, oxygen, water vapor, or a mixed gas composed of two kinds thereof may be simultaneously vaporized as an assist gas. This facilitates the progress of the polymerization reaction.

During the vapor phase synthesis, an excimer laser, a YAG laser, a carbon dioxide gas laser, an argon laser,
By irradiating an energy beam such as V light , the polymerization reaction of the organosilicon compound in the irradiated portion is particularly advanced. Or by irradiating an ion beam and particle beam such as an electron beam in accordance with the type of gas, as well as chromatic illumination portion
In particular, it promotes the polymerization reaction of organosilicon compounds .

After forming the bonding promoting layer as described above, the polymerization is further carried out by baking at 50 to 150 ° C. and exposing to a plasma of hydrogen, oxygen, water vapor, or a mixed gas comprising at least two of them. You may proceed.

The thickness of the bonding promoting layer is preferably in the range of 10 to 2000 angstroms. If it is thinner than this, the effect of increasing the bonding strength is small, and if it is thicker than this, peeling due to internal destruction of the bonding promoting layer becomes remarkable, the bonding promoting layer is eroded by acid during through-hole processing, and the haloing phenomenon occurs. It will be easier.

As the organic substance, a thermosetting resin such as an epoxy resin is dissolved in a solvent and applied or impregnated on a base material such as a glass cloth, and then dried and semi-cured to form a prepreg, or a high melting point prepreg. In the same manner, a thermoplastic resin was applied or impregnated and dried to prepare a prepreg,
Alternatively, a semi-cured resin plate or the like is used. These are bonded to the metal on which the bonding promoting layer is formed. In addition, a thermoplastic resin such as polyetherimide or polysulfone is melted and shaped, or a thermosetting resin such as an epoxy resin or a polyester resin is heated and cured to form a shape. Then, metals such as precipitates are bonded.

The metal and the organic substance obtained as described above are brought into contact with each other, and bonding can be performed by simultaneously performing heating and pressurization or heating and pressurization such as lamination molding.

After a bonding promoting layer is formed on a conductive metal foil such as a copper foil by the bonding method of the present invention, it is combined with a prepreg such as an epoxy resin and laminated and molded to obtain a laminate having a metal foil. A conductor circuit is formed on the laminate thus obtained by a known method such as an etching method to manufacture a wiring board. Furthermore, the wiring board thus obtained is used as an inner wiring board, and after forming a bonding promoting layer by the bonding method of the present invention on the conductive metal of the inner wiring board, the inner wiring board, the prepreg, and the conductive metal foil for the outer layer are formed. Are combined to form a multilayer circuit, and a conductor circuit is formed by a known method such as a panel plating method to manufacture a multilayer wiring board.

After forming a bonding promoting layer by the bonding method of the present invention on a base metal substrate of aluminum, iron, stainless steel or the like, a prepreg is combined with a conductive metal foil such as a copper foil, and then laminated and formed, and further etched. A conductor circuit is formed by a known method such as a method, and a metal base wiring board is manufactured.

A three-dimensional wiring board is formed by forming a bonding layer by the bonding method of the present invention on the surface of a three-dimensional molded product formed by melting a resin and then forming a metal film by a vapor phase method or a wet method. To manufacture. Although a known method can be used for forming the conductive circuit, the circuit can also be formed by irradiating an energy beam or a particle beam to the circuit shape at the time of forming the bonding promoting layer and increasing the bonding force at this portion.

[0023]

According to the method of joining a metal and an organic substance carried out by the above configuration, a simple gas phase synthesis process can be used.
A bonding promoting layer without a copper oxide film is formed. Since the activation treatment is performed on the metal surface on which the bonding promoting layer is formed, the bonding strength of the bonding promoting layer is improved.

The bonding method of the present invention having higher bonding reliability is used for bonding an organic insulator of a wiring board to a conductive metal.

[0025]

EXAMPLES The present invention will be described below in detail with reference examples and examples.

REFERENCE EXAMPLE 1 An inner wiring board 7 was prepared by an etching method using a 0.7 mm thick glass cloth base epoxy resin laminate having a 35 μm thick copper foil on both sides. The surface of the inner wiring board 7 was subjected to buffing and then degreasing under the same processing conditions as those used for normal blackening processing as activation processing. This pretreatment includes forming fine irregularities on the copper circuit surface of the inner wiring board 7, removing a surface contaminant layer such as an oil component and a rust inhibitor and a surface oxide layer, and chemically activating the surface to form an inner copper circuit. This was performed for the purpose of increasing the bonding strength between the metal and the bonding promoting layer.

It should be noted that the present invention is not limited to mechanical polishing such as buffing, but may be chemical polishing using a chemical solution and high energy processing such as plasma, ion beam and laser.

Next, using the plasma processing apparatus shown in FIG. 1, under the processing conditions shown in Table 1, γ-aminopropylethoxysilane was used as the organosilicon compound to become the bonding promoting layer, and the polymer film was vapor-phased. It was synthesized by the method. Other organic silicon compounds include γ-glycidoxymethoxysilane, N-β-aminoethyl-γ-aminopropyltrimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, and γ-glycol. What is generally called a silane coupling agent such as sildoxypropylmethyldiethoxysilane, vinyltriethoxysilane, and γ-methacryloxypropyltrimethoxysilane can be used.

In FIG. 1, reference numeral 6 denotes a vacuum chamber in which plasma processing is performed. First, after the inner-layer wiring board 7 that has been subjected to the above-described activation processing is inserted, the pressure is reduced by the oil rotary pump 9 via the vacuum valve 8. Reference numeral 10 denotes a substrate heating heater. The assist gas is supplied from a gas cylinder 11 via a gas valve 12, and γ-aminopropylethoxysilane is contained in a raw material tank 13, heated in an oil bath 14, and the vaporized gas is supplied via a gas valve 15. After the inside of the vacuum chamber 6 is controlled to a predetermined atmosphere, a plasma 19 is generated between the discharge electrode 17 and the ground electrode 18 by the high-frequency power supply 16, and γ-aminopropylethoxysilane is formed on the surface of the inner wiring board 7. A polymer film is synthesized.

[0030]

[Table 1]

In this embodiment , oxygen is used as the assist gas. However, hydrogen or steam, or a mixed gas of oxygen and steam or hydrogen and steam may be used.

As described above, by performing the gas phase synthesis using the organosilicon compound, the organosilicon compound is firstly hydrolyzed on the surface of the metal or organic substance to be joined by the reaction shown in Chemical Formula 1. It decomposes and polymerizes to form a strong bond, and at the same time, a coupling effect of the organic silicon-based compound acts to form a strong bond to the other metal or organic compound.

[0033]

Embedded image

The inner wiring board 7 on which the film was formed by the plasma polymerization was subjected to post-processing at a temperature of 20 ° C. and a humidity of 6
After being left in a 5% RH atmosphere for 2 hours, it was subjected to a heat treatment at a temperature of 150 ° C. for 3 hours, followed by baking to further densify the polymer film.

The film thickness of the silicon-based compound on the inner wiring board 7 formed by performing these treatments was 100 angstroms.

As shown in FIG. 2, a multilayer wiring board having a four-layer structure was prepared using the inner wiring board 7. A prepreg 20 having a thickness of 0.1 mm prepared by impregnating and drying an epoxy resin in a glass cloth base material is laminated three by three on the upper and lower sides of the inner wiring board 7, and a copper foil having a thickness of 18 μm is formed on the outside thereof as a conductive metal foil for an outer layer. 21 in an atmosphere decompressed to 6700 pascals, at a temperature of 170 ° C. and a pressure of 40 kgf / cm ^2.
For 2 hours. Thereafter, a conductor circuit was formed by a known method such as a pattern plating method to obtain a multilayer wiring board having a four-layer circuit configuration.

With respect to the multilayer wiring board thus obtained,
Copper foil peel strength, boiling solder heat resistance, and hydrochloric acid resistance were tested. The test for copper foil peel strength is normal and 2
After the boiling treatment for a period of time, the peel strength was measured by measuring the peel strength between the 35 μm copper foil forming the copper circuit of the inner wiring board and the insulating bonding layer by the prepreg. The boiling solder heat resistance test was conducted by boiling five multi-layered wiring boards of 50 mm square size for 2 hours, further immersing in a solder bath at 260 ° C. for 30 seconds, observing the appearance, and determining the number of delaminations. expressed. Hydrochloric acid resistance test is 0.4m on multilayer wiring board
Using a drill bit having a diameter of mφ, drilling was performed at a rotation speed of 80,000 rpm. The drilled multilayer wiring board was immersed in a 17.4% hydrochloric acid aqueous solution adjusted to 25 ° C. for 10 minutes. To observe whether the haloing phenomenon occurred in the through hole.

As a result, the copper foil peel strength was 1.8 kgf / cm under normal conditions and 1.6 kgf after boiling for 2 hours.
/ Cm strength was obtained. The boiling solder heat resistance was good without delamination. Also, the hydrochloric acid resistance was good without occurrence of the haloing phenomenon.

Example 2 A three-dimensional injection-molded product 22 was obtained by using polyetherimide (Ultem 1000, manufactured by GE Plastics Japan) as a resin and performing injection molding as a means for melting and forming a shape. The three-dimensional injection-molded article 22 is subjected to a material annealing treatment at a temperature of 200 ° C. for 3 hours, followed by an alcohol immersion treatment at a temperature of 23 ° C. for 30 seconds, and an etching treatment with chromic acid at a temperature of 70 ° C. for 10 minutes. Carried out. This treatment forms fine irregularities on the surface, removes a surface contaminating layer such as an oil component and a rust inhibitor and a surface oxidized layer, and chemically activates the surface, thereby joining the three-dimensional injection molded article 22 and the joining promoting layer. I went for the purpose of increasing my strength.

Using the excimer laser device shown in FIG.
A bonding promoting layer was synthesized by a gas phase method. In the vacuum chamber 6,
Put the three-dimensional injection molded product 22 that has been subjected to such pre-processing,
A volatile gas of γ-aminopropyltriethoxysilane was introduced into the vacuum chamber 6, the pressure was set to 2 Torr, and the three-dimensional injection molded product 22 was heated to 80 ° C. The three-dimensional injection-molded product 22 in the vacuum chamber 6 is charged with an energy density of 0.4 J / cm ² at 500
When the excimer laser 23 is irradiated through the window 24 under the condition of 0 shot, 2 mm is applied to the irradiated part of the excimer laser 23.
00 Å of the organosilicon compound was polymerized and deposited.

As a further post-treatment, oxygen gas was introduced into the vacuum chamber 6 using the plasma processing apparatus shown in FIG. 1 to a pressure of 1 Torr, a frequency of 13.56 MHz, a power of 50 W,
Plasma treatment was performed under the condition of a treatment time of 3 minutes. By this post-treatment, the polycondensation reaction of the organosilicon compound polymer film further proceeded, and the film could be densified.

Although oxygen is used as an introduction gas for assisting the polymerization, it may be hydrogen or steam, or a mixed gas of oxygen and steam or hydrogen and steam.

After applying a catalyst with palladium as a main component deposition catalyst to this three-dimensional injection molded article 22, a copper film of 0.75 μm was deposited by chemical copper plating. Thereafter, the three-dimensional injection-molded product 22 was immersed in a soft etching solution (ammonium persulfate) at 50 ° C. for 30 seconds.
The resin, the polymer film, and the copper were firmly bonded and remained without being etched, but the laser non-irradiated portion was etched and disappeared because the bonding was weak. In this way, a circuit was successfully formed only in the laser irradiation part. This circuit-formed three-dimensional injection-molded product 22 is formed by thickening 30 μm copper on the circuit part by electrolytic copper plating, and then applying 15 μm of nickel plating and 1 μm of gold plating to the three-dimensional injection molded product 22 as shown in FIG. A three-dimensional wiring board having a conductor circuit 25 was obtained.

With respect to the three-dimensional wiring board thus obtained,
The copper foil peeling strength and the boiling solder heat resistance were evaluated. The test of the copper foil peeling strength was performed in a normal state and after boiling treatment for 2 hours, and by measuring the peeling strength between the copper foil circuit and the resin of the insulating portion. Boiling solder heat resistance test is performed by boiling 5 three-dimensional wiring boards for 2 hours and 260 ° C.
After immersion in a solder bath for 30 seconds, the appearance was observed and expressed as the number of appearance abnormalities. As a result, the copper peeling strength was 1.2 kgf / cm in a normal state, and a strength of 1.1 kgf / cm was obtained after boiling for 2 hours. Boiled solder heat resistance was good without any abnormal appearance such as swelling.

Example 3 An alumite treatment was applied to a 3 mm-thick aluminum substrate 26 to form an alumina layer as an insulator to roughen the surface.

Using an ion beam irradiation apparatus shown in FIG. 5, a bonding promoting layer was formed by vapor phase synthesis on the aluminum substrate 26 which had been subjected to this processing. The aluminum substrate 26 was put into the vacuum chamber 6, and a gaseous gas of γ-aminopropyltriethoxysilane was introduced to set the pressure in the chamber to 1 × 10 ⁻⁴ Torr. The pressure in the vacuum layer 6 is reduced by the oil rotary pump 9 and the vacuum valve 8 for roughing, the oil diffusion pump 30, the main valve 31, and the back pressure valve 32. The aluminum substrate 26 is heated by the substrate heating heater 10 for 10 minutes.
Heated to 0 ° C. Further, oxygen gas was used as an assist gas by being introduced from a gas cylinder 11 and a gas valve 12. By the ion gun 27 and the ion accelerating grid 28,
Assist irradiation with the ion beam 29 under the conditions of an acceleration voltage of 500 eV and an acceleration current of 100 mA allowed 150 Å of γ-aminopropyltriethoxysilane to polymerize and deposit on the surface of the aluminum substrate 26.

In this embodiment, an oxygen ion beam is used for assisting, but a hydrogen ion beam or a water vapor ion beam may be used. Further, a mixed ion beam of oxygen and water vapor or hydrogen and water vapor may be used.

As shown in FIG. 6, a prepreg 20 having a thickness of 0.1 mm prepared by impregnating a glass cloth base material with an epoxy resin and drying it is provided on the surface 33 of the aluminum substrate 26 on which the γ-aminopropylethoxysilane polymer film layer is formed. 5 layers,
Further, a copper foil 21 having a thickness of 18 μm was laminated as a conductive metal foil on the outside thereof, and build-up was performed. In an atmosphere decompressed to 6700 Pascal, at a temperature of 170 ° C. and a pressure of 40 kgf / cm
Lamination molding was performed under the conditions of ² and 2 hours. Thereafter, a conductor circuit was formed by a known method such as an etching method, and an aluminum-based wiring board was obtained.

With respect to the aluminum base wiring board thus obtained, the peel strength between aluminum and the organic material of the prepreg was measured and the test for heat resistance of boiling solder was performed. The peel strength test was conducted in the normal state and after the boiling treatment for 2 hours. The test for the heat resistance of boiling solder was performed by boiling five aluminum base wiring boards having a size of 50 mm square for 2 hours and further immersing in a 260 ° C. solder bath for 30 seconds. As a result, the copper foil peeling strength was 1.7 in a normal state.
Kgf / cm, 1.5 kgf / cm after boiling for 2 hours
Was obtained. The boiling solder heat resistance was good without delamination.

Although a prepreg made of an epoxy resin is used in this embodiment, a wiring board is obtained without pressurizing by using a low-clay thermosetting polyester resin or the like and heating it while degassing under reduced pressure. You can also. In addition, by using a low-temperature curing type resin, a wiring board can be obtained only by pressing without heating.

[0051]

According to the method for bonding a metal and an organic substance of the present invention, a bonding promoting layer of an organosilicon compound is formed by vapor phase synthesis. No haloing phenomenon occurs, and no processing unevenness occurs. Further, there is no problem of uneven processing due to coating of a solution of an organic silicon-based compound or the like and poor bonding due to residual chemical after drying. Therefore, a uniform high bonding force can be stably obtained, and highly reliable bonding of a metal and an organic substance is realized by a simple gas phase synthesis process.

Further, by joining the organic insulator and the conductive metal by the joining method of the present invention, a wiring board having high joining reliability can be obtained.

[0053] Particularly, in the production of multi-layer wiring board laminate molding by combining a number of inner wiring board and the prepreg, are subjected to a process of forming a bond promoting layer of the present invention the inner layer circuit board
Then , the coupling effect of the bonding promoting layer has an effect of increasing the bonding strength between the inner copper circuit surface and the organic material of the prepreg. Also, even when drilling and plating through holes to form through holes in this multilayer wiring board, there is no oxidized layer as in the prior art, so no haloing phenomenon occurs. It works.

This effect is not limited to the above-described example in which an internal wiring board formed by providing a copper circuit on a laminated board is used to process the internal circuit. Even when the power supply circuit layer or the like is formed by the copper plate itself by forming an inner layer in the printed wiring board, the effects of increasing the bonding force and preventing the occurrence of the haloing phenomenon are exhibited.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating a configuration of a plasma processing apparatus.

FIG. 2 is a schematic diagram showing a configuration of a multilayer wiring board of Reference Example 1 .

FIG. 3 is a schematic diagram illustrating a configuration of an excimer laser processing apparatus.

FIG. 4 is a schematic view illustrating a configuration of a three-dimensional emission wiring board according to a second embodiment.

FIG. 5 is a schematic diagram illustrating a configuration of an ion beam processing apparatus.

FIG. 6 is a schematic diagram illustrating a configuration of an aluminum-based wiring board according to a third embodiment.

FIG. 7 is a cross-sectional view showing the occurrence of a haloing phenomenon in a through-hole portion of a conventional multilayer wiring board.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Through hole 2 Inner layer copper circuit 3 Blackening surface 4 Insulating resin 5 Part where a hello phenomenon occurs 6 Vacuum tank 7 Inner layer wiring board 8 Vacuum valve 9 Oil rotary pump 10 Heater for substrate heating 11 Gas cylinder 12 Gas valve 13 Material tank 14 Oil bath Reference Signs List 15 gas valve 16 high frequency power supply 17 discharge electrode 18 earth electrode 19 plasma 20 prepreg 21 copper foil 22 three-dimensional injection molded product 23 excimer laser 24 window 25 conductor circuit 26 aluminum substrate 27 ion gun 28 ion acceleration grid 29 ion beam 30 oil diffusion pump 31 valve 32 back pressure valve 33 γ-aminopropylethoxysilane polymer film layer forming surface

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-60-183787 (JP, A) JP-A-5-191045 (JP, A) JP-A-2-277294 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) H05K 3/00-3/46 C09J 183/00

Claims (7)

(57) [Claims] 1. A method for bonding a metal and an organic substance, comprising forming a bonding promoting layer on the surface of a metal or an organic substance by vapor phase synthesis, and then bonding the organic substance to the metal or the metal to the organic substance.
Te, gamma chromatography aminopropyltriethoxysilane, gamma Gurishido
Xymethoxymethoxysilane, N-β-aminoethyl-γ-a
Minopropyltrimethoxysilane, N-phenyl-γ-
Aminopropyltrimethoxysilane, γ-mercaptop
Ropirtrimethoxysilane, γ-glycidoxypropyl
Methyldiethoxysilane, vinyltriethoxysilane and
And γ-methacryloxypropyltrimethoxysilane
Together to vaporize any organic silicon compound is irradiated with energy beams or particle beams on the surface of the metal or organic, to promote the polymerization irradiation position of the metal and an organic substance, which comprises forming the bond promoting layer Joining method . 2. The method according to claim 1, wherein a bonding promoting layer is formed on the organic material, and the metal is deposited and bonded. 3. The method for bonding a metal and an organic substance according to claim 1, wherein an activation treatment is performed on the surface of the metal or the organic substance, and then a bonding promoting layer is formed on the surface. 4. After forming the bonding promoting layer, 50 to 200
Claims characterized in that it is subjected to heat treatment at ℃ for bonding.
2. The method for bonding a metal and an organic substance according to 1 . 5. After forming the adhesion promoting layer, claim 1, characterized in that subjected to joining by performing the process of exposing the plasma
The method for bonding a metal and an organic substance according to the description. 6. A method of manufacturing a metal base wiring board by laminating and forming a base metal, a prepreg, and a conductive metal foil, wherein a bonding promoting layer is formed on the surface of the base metal by vapor phase synthesis, and then bonded to the prepreg. Of metal base wiring board
2. A method according to claim 1, wherein the bonding promoting layer is a metal.
A method for manufacturing a metal-based wiring board, characterized in that the bonding-promoting layer is formed by a bonding method between a metal and an organic substance . 7. A joining-promoting layer is formed on the surface of a three-dimensional molded product formed by melting a resin by vapor phase synthesis, and a metal film is formed or deposited on the surface of the three-dimensional molded product for joining.
A method for manufacturing a three-dimensional wiring board, wherein the bonding promoting layer comprises:
A bonding promoting layer formed by the method for bonding a metal and an organic substance according to 1.
A method for manufacturing a three-dimensional wiring board.