JP3325317B2 - Semiconductor device used for COG type liquid crystal module - Google Patents

Semiconductor device used for COG type liquid crystal module

Info

Publication number
JP3325317B2
JP3325317B2 JP34541192A JP34541192A JP3325317B2 JP 3325317 B2 JP3325317 B2 JP 3325317B2 JP 34541192 A JP34541192 A JP 34541192A JP 34541192 A JP34541192 A JP 34541192A JP 3325317 B2 JP3325317 B2 JP 3325317B2
Authority
JP
Japan
Prior art keywords
parallelism
semiconductor element
projection
connection
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP34541192A
Other languages
Japanese (ja)
Other versions
JPH06168948A (en
Inventor
美津雄 宮崎
敏郎 本村
一行 久長
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP34541192A priority Critical patent/JP3325317B2/en
Publication of JPH06168948A publication Critical patent/JPH06168948A/en
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】この発明は、半導体素子の電極を
基板の配線部に直接接続するフェイスダウン方式の半導
体装置、特にCOG方式の液晶モジュールに用いる半導
体装置の改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a face-down type semiconductor device in which electrodes of a semiconductor element are directly connected to a wiring portion of a substrate, and more particularly to an improvement in a semiconductor device used for a COG type liquid crystal module.

【0002】[0002]

【従来の技術】半導体素子を基板上に搭載した半導体装
置としては、液晶モジュール、ELパネル等多くのもの
が開発されており、半導体素子の電極と基板上の配線部
との接続手段としては細いワイヤを用いるワイヤボンデ
ィング方式のほか、半導体素子の電極を基板の配線部に
直接接続するフェイスダウン方式も知られている(例え
ば、特公平2−7180号公報参照)。このフェイスダ
ウン方式は半導体素子の電極上に導電性の接続用突起を
形成し、対応した配線部をパターン形成した基板上に接
着材料を介在させて配置し、位置合わせして加圧した
後、この加圧状態で接着材料を硬化させるものであっ
て、接続用突起には金属、導電性ペースト、ゴムコネク
タ等が用いられ、また接着材料には光硬化性樹脂、熱硬
化性樹脂等が用いられており、接続用突起を微細にする
ことが容易であるので、配線ピッチが狭い高密度実装に
はワイヤボンディング方式よりも適している。
2. Description of the Related Art As a semiconductor device having a semiconductor element mounted on a substrate, many types such as a liquid crystal module and an EL panel have been developed, and a thin means for connecting an electrode of the semiconductor element to a wiring portion on the substrate has been used. In addition to a wire bonding method using a wire, a face-down method in which an electrode of a semiconductor element is directly connected to a wiring portion of a substrate is also known (for example, see Japanese Patent Publication No. 2-7180). In this face-down method, conductive connection protrusions are formed on the electrodes of the semiconductor element, and the corresponding wiring portions are arranged on the substrate on which the pattern is formed with an adhesive material interposed therebetween. The adhesive material is cured in this pressurized state, and a metal, conductive paste, rubber connector, or the like is used for the connection projection, and a light-curable resin, a thermosetting resin, or the like is used for the adhesive material. Since it is easy to make the connection projections fine, it is more suitable for high-density mounting with a narrow wiring pitch than the wire bonding method.

【0003】しかしながら、接続用突起を微細にするほ
ど、基板上に半導体素子を重ねて加圧する際の基板と半
導体素子との平行度が重要となり、平行度が悪いと荷重
の少なかった部分での接続不良が発生しやすくなるとい
う問題点がある。また接続用突起の配置が半導体素子の
中心に対して対称的でない場合には、加圧力の加わり方
がアンバランスとなって平行度も悪くなりやすく、接続
用突起の密度が高い部分では荷重が低下して接続不良を
生じやすくなる。図2はこのような接続不良が生じやす
い配置の一例である。図のように半導体素子1の上下と
右側の側縁に沿って接続用突起2が形成され、左側の側
縁1aには接続用突起2が形成されていない場合には、
加圧力が側縁1aに加わりやすいために上下側縁の左側
の接続用突起2は十分に加圧されるが、右側の接続用突
起2は加圧力が不足気味となって接続不良が生じやすく
なるのである。
However, as the connection projections become finer, the degree of parallelism between the substrate and the semiconductor element when the semiconductor element is overlaid on the substrate and pressurized becomes more important. There is a problem that connection failure is likely to occur. When the arrangement of the connection projections is not symmetrical with respect to the center of the semiconductor element, the manner in which the pressing force is applied is unbalanced and the parallelism is likely to be deteriorated. It is liable to cause a connection failure. FIG. 2 shows an example of an arrangement in which such a connection failure easily occurs. As shown in the figure, when the connection projection 2 is formed along the upper and lower and right side edges of the semiconductor element 1 and the connection projection 2 is not formed on the left side edge 1a,
Since the pressing force is likely to be applied to the side edge 1a, the left and right connection protrusions 2 on the upper and lower edges are sufficiently pressed, but the right connection protrusion 2 tends to be insufficient in the pressing force and connection failure is likely to occur. It becomes.

【0004】上記の平行度は、接続用突起の潰れ具合で
確認できるのでこれによって平行度を調整することがで
き、例えば基板と電極が透明な液晶モジュールの場合に
は接続用突起の潰れ具合を目視観察することができる。
しかし、ITO等の透明な材料で電極を形成した場合に
は、接触抵抗や配線抵抗を低くするためにその表面に
金、銀、アルミニウム等の金属材料が積層されるため、
確認用として金属材料が積層されない部分を残すように
しており、抵抗の高い部分が存在することによって液晶
モジュールの表示性能に悪影響が出る可能性があった。
The above-mentioned parallelism can be confirmed by the degree of collapse of the connection projections, so that the degree of parallelism can be adjusted. For example, in the case of a liquid crystal module having a transparent substrate and electrodes, the degree of collapse of the connection projections is determined. It can be visually observed.
However, when the electrode is formed of a transparent material such as ITO, a metal material such as gold, silver, and aluminum is laminated on the surface to reduce contact resistance and wiring resistance.
A portion where the metal material is not laminated is left for confirmation, and the display performance of the liquid crystal module may be adversely affected by the presence of the portion having high resistance.

【0005】[0005]

【発明が解決しようとする課題】この発明はこの点に着
目し、特にCOG方式の液晶モジュールに用いる半導体
装置において、平行度の確認を容易に行えるようにして
平行度を出しやすくすることを課題としてなされたもの
である。
SUMMARY OF THE INVENTION The present invention focuses on this point. In particular, it is an object of the present invention to make it easy to check the parallelism in a semiconductor device used for a COG type liquid crystal module so that the parallelism can be easily obtained. It was done as.

【0006】[0006]

【課題を解決するための手段】上記の課題を達成するた
めに、この発明では、接続用突起を形成した液晶駆動用
の半導体素子を対応した配線部を有するガラス基板上に
接着材料を介在させて配置し、位置合わせして加圧する
と共に上記接着材料を硬化させてガラス基板に半導体素
子を実装する構造の半導体装置において、電極上に形成
された導電性の接続用突起とは別に半導体素子の外周部
に平行度確認用突起を設け、前記ガラス基板には各接続
用突起に対応して金属層を有する透明電極をそれぞれ形
成し、更に平行度確認用突起に対応して当該透明電極の
無い接着部を設けている。上記の平行度確認用突起は、
例えば半導体素子の外周部の4箇所のコーナ部分に設け
られる。
According to the present invention, in order to achieve the above object, according to the present invention, a semiconductor element for driving a liquid crystal having connection projections is provided on a glass substrate having a corresponding wiring portion with an adhesive material interposed therebetween. In a semiconductor device having a structure in which a semiconductor element is mounted on a glass substrate by hardening the adhesive material and mounting the semiconductor element on the glass substrate, the semiconductor element is separated from the conductive connection projection formed on the electrode. A projection for checking parallelism is provided on the outer peripheral portion, a transparent electrode having a metal layer is formed on the glass substrate corresponding to each projection for connection, and further there is no transparent electrode corresponding to the projection for checking parallelism. An adhesive portion is provided. The above-mentioned projection for parallelism confirmation,
For example, they are provided at four corners on the outer periphery of the semiconductor element.

【0007】[0007]

【作用】平行度確認用突起が設けられる部分は接触抵抗
の問題がなく透明なままでよいので、その潰れ具合を目
視確認して平行度を正しく調整することができる。
The portion where the parallelism checking projection is provided can be left transparent without any problem of contact resistance, so that the degree of collapse can be visually checked and the parallelism can be adjusted correctly.

【0008】[0008]

【実施例】次に、この発明の実施例を図1により説明す
る。図の(a)は接続用突起と平行度確認用突起の配置を
示す半導体素子の平面図、(b)は半導体素子の電極とガ
ラス基板の配線部の関係を示す断面図である。
Next, an embodiment of the present invention will be described with reference to FIG. FIG. 1A is a plan view of a semiconductor element showing the arrangement of connection projections and projections for checking parallelism, and FIG. 2B is a cross-sectional view showing the relationship between electrodes of the semiconductor element and wiring portions of a glass substrate.

【0009】半導体素子1は液晶駆動用のIC素子であ
って、上下左右の各側縁に沿って一定のピッチで形成さ
れている電極3上に金属の接続用突起2がそれぞれ形成
されている。これに対応して、ガラス基板4にはITO
からなる透明電極5が形成されており、その表面には例
えば金などの薄い金属層6がめっき等によって形成され
ている。また半導体素子1の4箇所のコーナ部分には、
接続用突起2とは別に平行度確認用突起7が設けられて
いる。この平行度確認用突起7は電気的な接続を目的と
しないので、半導体素子1の本体上に直接設けられてお
り、これに対応してガラス基板4には透明電極5の無い
接着部4aが設けられている。半導体素子1のガラス基
板4への接続は、(b)図のように両者を位置合わせして
平行に配置した後、その間に光硬化性や熱硬化性等の接
着材料(図示せず)を介在させて加圧しながら、接着材
料を硬化させることによって行われ、平行度確認用突起
7は接着部4aに直接接着される。
The semiconductor element 1 is an IC element for driving a liquid crystal. Metal connection projections 2 are formed on electrodes 3 which are formed at a constant pitch along upper, lower, left and right side edges. . Correspondingly, the glass substrate 4 has ITO
Is formed, and a thin metal layer 6 such as gold is formed on the surface of the transparent electrode 5 by plating or the like. Also, at four corner portions of the semiconductor element 1,
A projection 7 for checking parallelism is provided separately from the connection projection 2. Since the parallelism checking protrusion 7 is not intended for electrical connection, it is provided directly on the main body of the semiconductor element 1, and the glass substrate 4 has a bonding portion 4 a without the transparent electrode 5 correspondingly. Is provided. The semiconductor element 1 is connected to the glass substrate 4 by aligning the two and arranging them in parallel as shown in FIG. 2 (b), and then applying an adhesive material (not shown) such as photo-curing or thermo-curing between them. This is performed by hardening the adhesive material while applying pressure while interposed therebetween, so that the parallelism checking protrusion 7 is directly bonded to the bonding portion 4a.

【0010】この実施例は上述のような構成であり、平
行度が良好に保たれた状態で接着された場合には各平行
度確認用突起7が全く同じ状態で潰れるので、ガラス基
板4を通して潰れ具合を目視観察することによって平行
度の良否を確認でき、その結果から平行度を調整するこ
とも容易である。なおこの実施例では、接続用突起2が
対照的に配置されているので加圧力の加わり方がアンバ
ランスになることがなく、しかも平行度の確認と調整が
容易であるので、ガラス基板4に品種の異なる複数の半
導体素子1を搭載する場合に、品種変更の都度平行度を
調整することなく連続的に作業を行うことができ、接続
不良が全く発生しないという良好な結果を得ることがで
きた。
This embodiment is constructed as described above, and when bonded in a state where the parallelism is kept good, the respective parallelism checking projections 7 are crushed in exactly the same state. The degree of parallelism can be confirmed by visually observing the degree of collapse, and it is easy to adjust the parallelism from the result. In this embodiment, since the connection projections 2 are arranged symmetrically, there is no imbalance in the manner in which the pressing force is applied, and the parallelism can be easily checked and adjusted. When a plurality of semiconductor devices 1 of different types are mounted, the operation can be performed continuously without adjusting the parallelism each time the type of product is changed, and a favorable result that no connection failure occurs can be obtained. Was.

【0011】この発明によれば電気的な接続を目的とし
ている接続用突起2の部分は透明である必要がないの
で、すべてに金属層6を設けて接触抵抗や配線抵抗の低
い接続を行うことができる。また、平行度確認用突起7
は本来電気的な接続を目的としていないのでその材料は
導電性である必要はないが、実際には電気的接続を目的
とする接続用突起2の形成時に同じ材料で同時に形成す
ることができる。
According to the present invention, the portions of the connection projections 2 for the purpose of electrical connection do not need to be transparent, so that a metal layer 6 is provided on all of them to perform connection with low contact resistance and wiring resistance. Can be. Also, a projection 7 for checking the parallelism
Since the material is not originally intended for electrical connection, the material does not need to be conductive. However, in practice, it can be formed simultaneously with the same material when forming the connection projection 2 for electrical connection.

【0012】[0012]

【発明の効果】上述の実施例から明らかなように、この
発明は、電極上に形成された導電性の接続用突起とは別
に半導体素子の外周部に平行度確認用突起を設けるよう
にしたものであり、平行度確認用突起が設けられる部分
を透明にできるのでその潰れ具合をガラス基板を通して
目視観察し、潰れ具合から平行度を確認すると共に必要
に応じて正しく調整することが容易となる。従って、フ
ェイスダウン方式で製造されるCOG方式の液晶モジュ
ールに用いる半導体装置において、平行度不良によって
生ずる接続不良をなくし、歩留まりを向上することがで
きるのである。
As is apparent from the above embodiment, in the present invention, a projection for confirming the parallelism is provided on the outer peripheral portion of the semiconductor element in addition to the conductive connection projection formed on the electrode. Since the portion on which the parallelism checking protrusion is provided can be made transparent, the degree of crushing can be visually observed through a glass substrate, and the degree of parallelism can be confirmed from the degree of crushing, and it can be easily adjusted properly if necessary. . Therefore, in a semiconductor device used for a COG liquid crystal module manufactured by a face-down method, a connection failure caused by a parallelism failure can be eliminated, and the yield can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の一実施例の平面図及び断面図であ
る。
FIG. 1 is a plan view and a sectional view of an embodiment of the present invention.

【図2】従来例の平面図である。FIG. 2 is a plan view of a conventional example.

【符号の説明】[Explanation of symbols]

1 半導体素子 2 接続用突起 3 電極 4 ガラス基板 4a 接着部 5 透明電極 6 金属層 7 平行度確認用突起 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Connection projection 3 Electrode 4 Glass substrate 4a Adhesion part 5 Transparent electrode 6 Metal layer 7 Parallelism confirmation projection

フロントページの続き (56)参考文献 特開 昭63−117437(JP,A) 特開 平3−119740(JP,A) 特開 昭63−12142(JP,A) 特開 平1−238148(JP,A) 特開 昭64−24434(JP,A) 特開 平3−159144(JP,A) 特開 平5−67647(JP,A) 特開 平6−45402(JP,A) 実開 平2−36036(JP,U) 実開 昭59−20633(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 21/60 Continuation of the front page (56) References JP-A-63-117437 (JP, A) JP-A-3-119740 (JP, A) JP-A-63-12142 (JP, A) JP-A-1-238148 (JP) JP-A-64-24434 (JP, A) JP-A-3-159144 (JP, A) JP-A-5-67647 (JP, A) JP-A-6-45402 (JP, A) 2-36036 (JP, U) Actually open sho 59-20633 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 接続用突起を形成した液晶駆動用の半導
体素子を対応した配線部を有するガラス基板上に接着材
料を介在させて配置し、位置合わせして加圧すると共に
上記接着材料を硬化させてガラス基板に半導体素子を実
装する構造の半導体装置において、電極上に形成された
導電性の接続用突起とは別に半導体素子の外周部に平行
度確認用突起が設けられ、前記ガラス基板には各接続用
突起に対応して金属層を有する透明電極がそれぞれ形成
され、更に平行度確認用突起に対応して当該透明電極の
無い接着部が設けられていることを特徴とするCOG方
式の液晶モジュールに用いる半導体装置。
1. A liquid crystal driving semiconductor element having connection projections formed thereon is disposed on a glass substrate having a corresponding wiring portion with an adhesive material interposed therebetween, and is positioned and pressed, and the adhesive material is cured. In a semiconductor device having a structure in which a semiconductor element is mounted on a glass substrate, a projection for checking the degree of parallelism is provided on an outer peripheral portion of the semiconductor element separately from the conductive connection projection formed on the electrode. A transparent electrode having a metal layer is formed corresponding to each connection projection, and an adhesive portion without the transparent electrode is provided corresponding to the parallelism confirmation projection. A semiconductor device used for a module.
【請求項2】 上記平行度確認用突起が半導体素子の外
周部の4箇所のコーナ部分に設けられている請求項1記
載のCOG方式の液晶モジュールに用いる半導体装置。
2. The semiconductor device used in a COG type liquid crystal module according to claim 1, wherein said parallelism checking projections are provided at four corners on the outer periphery of the semiconductor element.
JP34541192A 1992-11-30 1992-11-30 Semiconductor device used for COG type liquid crystal module Expired - Fee Related JP3325317B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34541192A JP3325317B2 (en) 1992-11-30 1992-11-30 Semiconductor device used for COG type liquid crystal module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34541192A JP3325317B2 (en) 1992-11-30 1992-11-30 Semiconductor device used for COG type liquid crystal module

Publications (2)

Publication Number Publication Date
JPH06168948A JPH06168948A (en) 1994-06-14
JP3325317B2 true JP3325317B2 (en) 2002-09-17

Family

ID=18376419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34541192A Expired - Fee Related JP3325317B2 (en) 1992-11-30 1992-11-30 Semiconductor device used for COG type liquid crystal module

Country Status (1)

Country Link
JP (1) JP3325317B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4116055B2 (en) * 2006-12-04 2008-07-09 シャープ株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPH06168948A (en) 1994-06-14

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