JPH06168948A - Semiconductor device - Google Patents

Abstract

PURPOSE:To easily obtain parallelism or easily confirm it, by arranging connection protrusions formed on a semiconductor element so as to be symmetric with respect to the center of the semiconductor element. CONSTITUTION:A semiconductor element 1 is an IC element for driving liquid crystal. Metal protrusions 2 for connection are formed on electrodes 3 formed along the upper and the lower side edges and the right and the left side edges, at constant pitches. The electrodes 3 and the protrusions 2 for connection are arranged so as to be symmetric with respect to the center A of the semiconductor element 1. Transparent electrodes 5 composed of ITO are formed on a glass substrate 4, so as to correspond with the protrusions 2. A thin metal layer 6 like gold is formed on the electrode 5 by plating or the like. The connection of the semiconductor element 1 to the glass substrate 4 is performed by curing adhesive agent in the manner in which, after the element 1 and the substrate 4 are position-aligned and arranged in parallel, both of them are pressed with pressure while photo-setting or thermosetting adhesive material is interposed between the element 1 and the substrate 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a face-down type semiconductor device in which electrodes of semiconductor elements are directly connected to wiring portions of a substrate.

[0002]

2. Description of the Related Art As a semiconductor device in which a semiconductor element is mounted on a substrate, many ones such as a liquid crystal module and an EL panel have been developed, and the connecting means between the electrode of the semiconductor element and the wiring portion on the substrate is thin. In addition to a wire bonding method using a wire, a face-down method in which an electrode of a semiconductor element is directly connected to a wiring portion of a substrate is also known (for example, see Japanese Patent Publication No. 2-7180). In this face-down method, conductive connecting protrusions are formed on the electrodes of the semiconductor element, and the corresponding wiring portions are arranged on the patterned substrate with an adhesive material interposed between them. The adhesive material is cured under this pressure, and metal, conductive paste, rubber connector, etc. are used for the connection protrusions, and photo-curable resin, thermosetting resin, etc. are used for the adhesive material. Since it is easy to make the connecting projections fine, it is more suitable than the wire bonding method for high-density mounting with a narrow wiring pitch.

However, as the connecting projections are made finer, the parallelism between the substrate and the semiconductor element becomes more important when the semiconductor elements are stacked on the substrate and pressed, and when the parallelism is poor, the load is small in the portion. There is a problem that connection failure is likely to occur. Even if the substrate and the semiconductor element are parallel to each other, if the arrangement of the connecting protrusions is not symmetrical with respect to the center of the semiconductor element, the applied pressure will be unbalanced and the connecting protrusions will have a high density. In this case, the load is reduced and connection failure is likely to occur. FIG. 4 is an example of an arrangement in which connection failure is likely to occur. As shown in the figure, the connection protrusions 2 are formed along the upper and lower sides and the right side edge of the semiconductor element 1, and the connection protrusion 2 is formed on the left side edge 1a. When the protrusions are not formed, since the pressing force is easily applied to the side edge 1a, the connecting projections 2 on the left side of the upper and lower side edges are sufficiently pressed, but the connecting projections 2 on the right side are insufficient in pressing force. It tends to cause poor connection.

Further, since the parallelism can be confirmed by the degree of collapse of the connection projection, the parallelism can be adjusted by this. For example, in the case of a liquid crystal module having a transparent substrate and electrodes, the connection projection is collapsed. It is possible to visually observe the condition. However, when the electrode is formed of a transparent material such as ITO, a metal material such as gold, silver, or aluminum is laminated on the surface to reduce the contact resistance and the wiring resistance, and therefore the metal material is used for confirmation. However, there is a possibility that the display performance of the liquid crystal module may be adversely affected by the presence of the high resistance portion.

[0005]

SUMMARY OF THE INVENTION The present invention has been made in view of this point, and an object thereof is to make parallelism easy or to easily confirm the parallelism.

[0006]

In order to solve the above-mentioned problems, in the first invention, the connecting projections formed on the semiconductor element are arranged symmetrically with respect to the center of the semiconductor element. In the second aspect of the invention, the parallelism confirming protrusion is provided on the outer peripheral portion of the semiconductor element in addition to the conductive connecting protrusion formed on the electrode.

[0007]

In the first aspect of the invention, since the connecting projections are arranged symmetrically with respect to the center of the semiconductor element, it is easy to apply parallel pressing force to all the connecting projections while maintaining parallelism. . Further, in the second aspect of the invention, since the portion provided with the parallelism confirmation projection does not have a problem of contact resistance and may remain transparent, the parallelism can be visually confirmed and the parallelism can be adjusted correctly depending on the collapsed state. .

[0008]

EXAMPLE An example in which the first invention is applied to a COG type liquid crystal module will be described with reference to FIG. 1A is a plan view showing the arrangement of connection protrusions of a semiconductor element, and FIG. 1B is a sectional view showing the relationship between the electrodes of the semiconductor element and the wiring portions of the substrate. The semiconductor element 1 is an IC element for driving a liquid crystal, and metal connection protrusions 2 are formed on electrodes 3 formed at a constant pitch along the upper, lower, left, and right side edges, respectively. The electrodes 3 and the connection protrusions 2 are arranged symmetrically with respect to the center A of the semiconductor element 1. Corresponding to this, a transparent electrode 5 made of ITO is formed on the glass substrate 4, and a thin metal layer 6 such as gold is formed on the surface by plating or the like. The semiconductor element 1 is connected to the glass substrate 4 by aligning the two as shown in (b) and arranging them in parallel, and then applying an adhesive material (not shown) such as photocurable or thermosetting material therebetween. It is performed by curing the adhesive material while interposing and pressing.

In this embodiment, the connection projections 2 are symmetrically arranged and the pressing force is evenly applied, so that the parallelism is kept good. Therefore, even when a plurality of semiconductor elements 1 of different types are mounted on the glass substrate 4, the work can be continuously performed without adjusting the parallelism each time the type is changed. All were crushed to the same degree, and good results were obtained in that no connection failure occurred at all.

Although the connecting projections 2 are arranged along the side edges in FIG. 1, other arrangements may be used as long as they are symmetrical with respect to the center. FIG. 2 is an example thereof, and the protrusions 2 are arranged not only on the periphery but also inside.

Next, an example in which the second invention is similarly applied to a COG type liquid crystal module will be described. In FIG. 3, the connection protrusions 2 are made of, for example, metal and are formed on the electrodes 3 as in FIG. 1, and are arranged along the side edges of the semiconductor element 1, but at four corners. In addition to the connection protrusion 2, a parallelism confirmation protrusion 7 is provided.
As shown in FIG. 3B, the parallelism confirmation projections 7 are not provided for electrical connection and therefore are directly provided on the main body of the semiconductor element 1, and the glass substrate 4 is provided with the respective connection projections. Two
Transparent electrodes 5 each having a metal layer 6 are formed correspondingly to, and an adhesive portion 4a having no transparent electrode 5 corresponding to the parallelism confirmation projection 7 is provided. The semiconductor element 1 is connected to the glass substrate 4 by aligning the two and arranging them in parallel, and then applying an adhesive material such as a photocurable or thermosetting material between them and pressurizing the adhesive material in that state. It is performed by curing, and the parallelism confirmation projection 7 is directly bonded to the bonding portion 4a.

This embodiment has the above-mentioned structure, and when the parallelism confirming projections 7 are crushed in exactly the same state when bonded in a state where the parallelism is kept good, the glass substrate 4 is passed through. The quality of the parallelism can be confirmed by observing the degree of collapse, and the parallelism can be easily adjusted from the result. In this embodiment, since the connecting projections 2 are symmetrically arranged according to the first aspect of the invention, good parallelism is maintained, and it is easy to check and adjust the parallelism.
When a plurality of semiconductor elements 1 of different types are mounted on the glass substrate 4, it is possible to perform work continuously without adjusting the parallelism each time the type is changed, and there is a good result that connection failure does not occur at all. Was obtained.

Since the connecting projections 2 for electrical connection do not need to be transparent, the metal layer 6 can be provided on all of them for connection with low contact resistance and wiring resistance. Become. Further, since the parallelism confirmation projection 7 is not originally intended for electrical connection, its material does not need to be conductive, but in reality, the same material is used when the connection projection 2 is formed for electrical connection. Can be formed simultaneously. In this case, since the parallelism confirmation projection 7 is conductive, it can also serve as an electrical connection.
In that case, the protrusion 7 is formed on the electrode 3, and the transparent electrode 5 without the metal layer 6 is formed on the corresponding bonding portion 4a.

[0014]

As is apparent from the above embodiment, the first
According to the invention, the connection projections formed on the semiconductor element are arranged symmetrically with respect to the center of the semiconductor element, so that the connection projections are not pushed and the pressure is evenly applied. Therefore, it becomes easy to maintain the parallelism between the substrate and the semiconductor element, and it is possible to eliminate the connection failure in the face-down type semiconductor device and improve the yield. In the second invention, a parallelism confirmation protrusion is provided on the outer peripheral portion of the semiconductor element in addition to the conductive connection protrusion formed on the electrode, and the parallelism confirmation protrusion is provided. Since the portion can be made transparent, it is easy to visually check the parallelism by the degree of the collapse, and it is possible to maintain the parallelism and eliminate the connection failure in the face-down type semiconductor device, thereby improving the yield.

[Brief description of drawings]

FIG. 1 is a plan view and a sectional view of an embodiment of the first invention.

FIG. 2 is a plan view of another embodiment.

FIG. 3 is a plan view and a sectional view of an embodiment of the second invention.

FIG. 4 is a plan view of a conventional example.

[Explanation of symbols]

 1 semiconductor element 2 connection protrusion 3 electrode 4 glass substrate 5 transparent electrode 6 metal layer 7 parallelism confirmation protrusion A center of semiconductor element

Claims (2)

[Claims] 1. A semiconductor device having a connection protrusion formed thereon is arranged on a substrate having a corresponding wiring portion with an adhesive material interposed therebetween, aligned and pressed, and the adhesive material is cured to form a semiconductor on the substrate. A semiconductor device having a structure for mounting an element, wherein the connecting projections are arranged symmetrically with respect to the center of the semiconductor element. 2. A semiconductor element having a connection protrusion formed thereon is arranged on a substrate having a corresponding wiring portion with an adhesive material interposed, aligned and pressed, and the adhesive material is cured to form a semiconductor on the substrate. A semiconductor device having a structure for mounting an element, characterized in that, in addition to a conductive connecting projection formed on an electrode, a parallelism confirming projection is provided on an outer peripheral portion of the semiconductor element.