JP3309207B2 - Processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for supplying a processing liquid such as a developing solution to a surface of a substrate to be processed such as an LCD substrate.

[0002]

2. Description of the Related Art Generally, in the field of semiconductor technology, when a semiconductor layer, an insulator layer, and an electrode layer formed on a substrate to be processed, for example, an LCD substrate, are selectively etched into a predetermined pattern, a semiconductor wafer is formed. A series of processes for reducing a circuit pattern or the like using a photolithography technique similar to the case, transferring the circuit pattern to a photoresist, and developing the same are performed.

For example, an LCD substrate, which is a substrate to be processed, is cleaned by a cleaning device, the LCD substrate is subjected to hydrophobic treatment by an adhesion processing device, cooled by a cooling device, and then photoresist is coated by a resist coating device. A film, that is, a photosensitive film is applied and formed. Then, after the photoresist film is heated by a heat treatment device and subjected to a baking treatment, a predetermined pattern is exposed by an exposure device, and the exposed L is exposed.
After developing and applying the developing solution to the CD substrate with a developing device, the developing solution is washed away with a rinsing solution to complete the developing process.

In performing the above-described processing, a substrate to be processed such as an LCD substrate is held by a spin chuck as a holding means, and a processing liquid such as a developing solution is supplied to the surface of the LCD substrate or the like. There is known a spin rinsing method in which a developer is horizontally rotated to wash a developer or the like with pure water.

[0005]

However, in a conventional processing apparatus of this type, since the spin chuck is generally formed of an aluminum alloy member, the spin chuck is rotated during the rinsing process to generate a rinsing liquid. When pure water is supplied, the LCD substrate is charged by the frictional action between the pure water and the LCD substrate, and there is a problem that the device in the LCD substrate is broken by static electricity due to the charging.
Even in the case of an LCD substrate having no device, discharge occurs from the charged substrate to the transfer arm, and this discharge phenomenon causes electrostatic noise from the transfer arm, causing a problem in the transfer device.

[0006] The present invention has been made in consideration of the above circumstances, and suppress charging of the substrate, adverse effects der due to charging
To prevent failure due to charging of the substrate to be processed
An object of the present invention is to provide a processing apparatus for preventing discharge to an arm .

[0007]

In order to achieve the above object, according to the first aspect of the present invention, an object to be processed is provided between a transfer arm and a transfer arm.
Transfers substrates and holds and rotates substrates to be processed
Holding means for supplying the processing liquid to the surface of the substrate to be processed.
Means for supplying a processing liquid to be supplied;
A cleaning liquid supply nozzle for supplying a cleaning liquid;
A fluid for static elimination is applied to at least the holding means of the substrate to be processed.
And a fluid supply unit for supplying static elimination fluid.
The holding means is provided on a lower surface of the mounting portion made of synthetic resin.
Has a metal rotating shaft mounting boss protruding in the center,
The thickness of the mounting part to reduce the capacitance of the holding means
And make the boss smaller in diameter.
That, characterized in that.

[0008] In the first aspect of the present invention, the holding hand
As a synthetic resin for forming the mounting portion of the step, for example, polyfe
Nilen sulfide can be used (claim
2) .

In the first or second aspect of the present invention,
Whether the current eliminator supply means is provided above the holding means (claim
Item 3) Alternatively, it can be provided below (claim
4) .

In the present invention, for example, an ionized gas, a liquid such as pure water or isopropyl alcohol (IPA), or the like can be used as the fluid for static elimination.
As the charge removing fluid supply means can be used, for example ionizer for generating ionized gas, pure water supply nozzle for injecting pure water, the IPA supply nozzle or the like for injecting a volatile liquid for example IPA (claim 6 ). When a liquid such as pure water is used as the static elimination fluid, for example ,
It is preferable to provide dry gas supply means for supplying dry gas toward the holding means and the substrate to be processed.
5 ). In this case, for example, nitrogen (N
2) Gas or clean air can be used.
I can .

[0011] According to a seventh aspect, claim 5 or 6 Symbol
In the processing apparatus described above, a nitrogen gas or air is flowed in a gap between the rotation shaft of the holding unit and the container surrounding the substrate to be processed, and the rotation shaft side is formed to be capable of positive pressure. It is characterized by becoming .

According to the first or second aspect of the present invention, the mounting portion of the holding means is made of a synthetic resin member such as a polyphenylene sensor.
Formed with sulfide and increase the thickness of the mounting part
By that, it is possible to reduce the charge quantity of the substrate. Therefore, by suppressing the charging of the substrate to be processed, it is possible to prevent electrostatic damage such as electrostatic destruction of a device formed on the substrate to be processed due to the charging of the substrate to be processed, and also to prevent the substrate from being processed to the transfer means. , It is possible to prevent discharge noise disturbance due to the discharge phenomenon. Also dielectric
Boss as an electrode that sandwiches the mounting part with the substrate to be processed
By reducing the area of the part, the capacitance can be reduced.
And the charge amount of the substrate to be processed can be reduced.
You .

According to the third or fourth aspect of the present invention, the mounting portion of the holding means is formed of a synthetic resin member, and a discharging fluid is supplied to the holding means above or below the holding means. By doing so, the charging of the holding unit can be suppressed, and further, the charge charged on the holding unit can be eliminated. Therefore, it is possible to more reliably prevent electrostatic damage such as electrostatic destruction of a device formed on the processing target substrate due to charging of the processing target substrate, and to reduce discharge noise interference due to a discharge phenomenon from the processing target substrate to the transporting means. Further, it is possible to surely prevent the occurrence.

According to the fifth aspect of the present invention, by supplying the dry gas from the dry gas supply means to the holding means and the substrate to be processed , the liquid static elimination fluid supplied from the current eliminator supply means is provided. Thereby, drying of the wetted portion of the holding means and the substrate to be processed can be promoted.

According to the invention described in claim 6, the holding means and
By supplying a volatile liquid for static elimination to the substrate to be processed,
The supply of the dry gas can be made unnecessary .

According to the seventh aspect of the present invention, the holding means
In the gap between the rotating shaft and the container surrounding the substrate to be processed,
By flowing air and making the rotating shaft side positive pressure,
It can prevent the static elimination liquid from entering the rotating shaft side.
You .

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings. Here, a case will be described in which the processing apparatus of the present invention is applied to an LCD substrate resist coating / developing processing system.

The above resist coating / developing system comprises:
As shown in FIG. 1, a loader unit 1 for loading and unloading an LCD substrate G (hereinafter, referred to as a substrate) as a substrate to be processed, a first processing unit 2 for the substrate G, and a first unit via a relay unit 3. And a second processing unit 4 connected to the processing unit 2. An exposure device 6 for exposing a predetermined fine pattern on a resist film via a transfer unit 5 can be connected to the second processing unit 4.

In the coating and developing system configured as described above, the unprocessed substrate G accommodated in the cassette 7 mounted on the cassette mounting table 8 is taken out by the loading / unloading tweezers 9 of the loader unit 1. X, Y (horizontal), Z (vertical) moving on the transport path 11 of the first processing unit 2
It is delivered to the main arm 10 which is a transfer arm capable of rotating in the direction and θ (rotation), and then transferred into the brush cleaning device 12. The substrate G that has been brush-cleaned in the brush cleaning device 12 is cleaned with high-pressure jet water in the jet water cleaning device 13 as necessary. Thereafter, the substrate G
Is subjected to a hydrophobic treatment by an adhesion treatment device 14 and cooled by a cooling treatment device 15, and then a photoresist film, that is, a photosensitive film is applied and formed by a resist coating device 16, and subsequently, a coating film removing device Unnecessary resist film 17 in the peripheral portion of substrate G is removed by 17. Then, the photoresist film is heated by the heat treatment device 18 and subjected to a baking process, and then a predetermined pattern is exposed by the exposure device 6. Then, the exposed substrate G is transported into the developing device 20 by a main arm 10a which is a transport arm that is rotatable in X, Y, Z, and θ directions that moves along the transport path 11a of the second processing unit 4, and the developer G After the development, the developer is washed away with a rinse solution, and the development processing is completed. The processed substrate G that has been subjected to the development processing is accommodated in the cassette 7a of the loader unit 1 and then carried out and transferred to the next processing step.

Next, the configuration of a processing apparatus (specifically, a developing apparatus) according to the present invention used in the above-described LCD substrate coating / developing processing system will be described.

[0021] ◎ first embodiment the developing device 20, as shown in FIGS. 2 and 3, Mei
Chuck 21 serving as holding means for holding the substrate G received from the arm 10a by vacuum suction and rotating in the horizontal direction, a container 30 surrounding the spin chuck 21 and the substrate G, and a resist film surface on the surface of the substrate G. A developing solution supply nozzle 22 for supplying a developing solution as a processing solution to the substrate G; a cleaning solution supply nozzle 23 for supplying a rinsing solution (cleaning solution) to a circuit pattern on the surface of the substrate G after development;
A moving mechanism 24 for moving the developer supply nozzle 22 to a standby position provided on the right side of the drawing and to a processing position above the substrate G; and a discharging fluid located above the spin chuck 21 and directed toward the substrate G and the spin chuck 21. For example, it is provided with an ionizer 25 (current eliminator supply means) for blowing ionized gas.

The spin chuck 21 is shown in FIGS.
As shown in (a), a mounting portion 21a on which the substrate G is mounted
And a boss 21b for attaching a rotating shaft projecting from the center of the lower surface of the mounting portion 21a.
For example, it is formed of a synthetic resin member such as polyphenylene sulfide (PPS), and the boss 21b is formed of a metal member such as stainless steel (SUS). The spin chuck 21 thus configured can be considered as a capacitor in which the mounting portion 21a, which is a dielectric, is sandwiched between the substrate G and the electrodes of the boss portion 21b. (At this time,
The substrate G is also a capacitor. In addition, the spin chuck 21 is connected to a motor 27 via a rotating shaft 26 attached to the boss 21b. The spin chuck 21 is configured to be able to move up and down by an elevating means (not shown). Further, the spin chuck 21 is connected to a vacuum device (not shown), and is configured to be capable of vacuum-sucking the substrate G mounted on the mounting portion 21a.

In this case, the diameter d of the boss portion 21b is made as small as possible with respect to the diameter D of the mounting portion 21a in consideration of the arrangement space of the spin chuck 21 and the allowable strength of the spin chuck 21. And the mounting portion 21a
Is formed as thick as possible. For example, when the diameter D of the mounting portion 21a is 300 mmφ and the boss portion 21b
Has a diameter d of 30 mmφ, and the thickness h of the mounting portion 21a is 9 mm. The boss has a thickness H of 30 mm. Generally, the capacitance C is represented by the following equation (1).

C = ε · S / h [F; Farad] (1) where C is the capacitance, ε is the dielectric constant, and h is the mounting portion 21
The thickness a and S are the surface area of the boss 21b. Therefore, the capacitance of the spin chuck 21 can be reduced by reducing the surface area S of the boss portion 21b serving as an electrode and increasing the thickness h of the mounting portion 21a serving as a dielectric.

Further, as shown in FIG.
By connecting the capacitor of 1a and the capacitor of the substrate in series, the total capacitance Call becomes: Call = Cc × Cg / (Cc + Cg) (2) where Cc is the capacitance of the mounting portion and Cg is the substrate. Is the capacitance. ｝, Which can be made smaller than the respective capacitances.

Further, assuming that the potential due to the charge formed by friction between the rinse liquid (pure water) and the substrate is V, the charge Qall stored in the substrate G and the mounting portion 21a is: Qall = (Cc × Qg + Cg × Qc) / (Cc + Cg) (3) where Qg is the charge on the substrate and Qc is the charge on the mounting portion. Ｑ, and Qall = Call × V. V is a potential due to electric charges generated by friction between the substrate G and the rinsing liquid, and is constant depending on processing conditions. Therefore, if Call can be reduced, Qall can also be reduced. That is, Qg can be reduced.

On the other hand, the developer supply nozzle 22 is connected to a developer storage tank 40 via a developer supply tube 28, and a pump 41 provided in the developer supply tube 28.
And the opening and closing operation of the valve 42 supplies the developing solution. This developer supply nozzle 2
Reference numeral 2 denotes a structure in which a developer discharge hole is formed at an appropriate interval in a lower surface of a developer storage chamber having a length substantially equal to that of the substrate G (not shown).

Further, the cleaning liquid supply nozzle 23 is provided as shown in FIG.
As shown in FIG. 3, a head 23b is provided at the distal end of an arm 23a which is mounted so as to be rotatable (rotatable) in the horizontal direction. For example, a bottomed tubular mesh body (not shown) is attached. By attaching the mesh body to the tip end of the cleaning liquid supply nozzle 23 in this way, when the rinse liquid supply nozzle 23 discharges a rinsing liquid, such as pure water, and stops, the capillary action acts on the mesh part to rinse the mesh. The liquid can be held and the rinse liquid can be prevented from dropping.

The cleaning liquid supply nozzle 23 does not necessarily need to be formed so as to be rotatable in the horizontal direction, as shown in FIG. It may be.

The container 30 is provided with a spin chuck 2
1 and a lower container 31 located below the substrate G, and an outer container 32 located on the outer peripheral side of the spin chuck 21 and the substrate G, and an exhaust connected to an exhaust device (not shown) at the bottom of the lower container 31. A port 33 is provided, and a drain port 34 is provided at the bottom of the outer container 32.

On the other hand, the ionizer 25 is provided above the spin chuck 21. The ionizer 25 blows the ionized gas of different polarities generated by the ionizer 25 toward the substrate G and the spin chuck 21, and The charge charged to the G and the spin chuck 21 can be canceled.

Next, an operation mode of the processing apparatus configured as described above will be described. First, the main arm 10a
When the substrate G is transported to the processing apparatus 20, the spin chuck 21 rises to receive the substrate G, and holds the substrate G by vacuum suction driven by a vacuum device (not shown). Thereafter, the main arm 10a retreats from the processing device 20, and the spin chuck 21 descends. Next, the pump 41 is driven, and at the same time, the developing solution supply nozzle 22 is caused to scan in the short side or long side direction of the substrate G, thereby supplying the developing solution to the surface of the substrate G (liquid accumulation).

Next, after the developing solution supply nozzle 22 is retracted to the standby position and the developing process is performed for a predetermined time, the cleaning solution supply nozzle 23 is moved above the substrate G to supply the rinsing solution and drive the motor 27. by by rotating the spin chuck 21, flow wash liquid developer remaining on the substrate G with a rinsing liquid. Then, after the supply of the rinsing liquid from the cleaning liquid supply nozzle 23 is stopped and the cleaning liquid supply nozzle 23 is retracted to the standby position, the spin chuck 21 is rotated at a high speed to remove the developer and the rinsing liquid adhering to the surface of the substrate G. Drying is performed by blowing off by centrifugal force to complete the development processing.

At this time, the substrate G and the spin chuck 21 are charged by friction of the rinsing liquid. Main developing device 2
In the case of 0, new substrates G are successively transported by the main arm 10a and the developing process is continuously repeated. Therefore, when the first substrate G is developed while the spin chuck 21 is not charged, the substrate G and the spin chuck 21 are slightly charged even by friction of a rinsing liquid during spin rinsing. Thereafter, the developed substrate G is removed from the developing device 20 by the main arm 10a, and the undeveloped substrate G is newly loaded into the developing device 20. Then the main
Et receive from the spin chuck 21 by an arm 10a
Substrate G that is conveyed to the subsequent processing unit. When the developed substrate G and the undeveloped substrate G are exchanged, the ionizer 25 is driven and sprayed toward the spin chuck 21 to remove electricity. Thus, spin chuck 2
By removing the electric charge at the time of replacing the substrate, the substrate can be processed in a state where the spin chuck 21 is not always charged in the continuous processing, so that the substrate G is slightly charged due to friction of the rinsing liquid during spin rinsing in the initial state. can be suppressed, electrostatic damage to the device substrate G, for example transport means
For example, it is possible to prevent discharge noise disturbance in the control system of the main arm 10a .

On the other hand, if the ionization of the spin chuck 21 by the ionizer 25 is not performed when the developed substrate G and the undeveloped substrate G are exchanged, the developing process of the substrate G by the developing device 20 is repeated, whereby the spin chuck 21 is removed.
Is largely charged, so that the friction on the rinsing liquid during spin rinsing also increases the charge on the substrate G. for that reason,
There is a possibility that the device formed on the substrate G may be electrostatically damaged by the electric charge charged on the substrate G. Further, when the substrate G is charged, noise is generated due to a discharge phenomenon from the charged substrate G to the transporting means, and there is a possibility that a discharge noise failure may occur in a control system of the transporting means, for example, the main arm 10a .

Second Embodiment FIG. 5 is a schematic sectional view of a processing apparatus according to a second embodiment of the present invention, and FIG. 6 is an enlarged sectional view of a main part thereof.

In the second embodiment, a charge removing fluid is supplied from below the spin chuck 21 to remove charge from the charged spin chuck 21 and the substrate G. That is, a pure water supply nozzle 50 (static fluid supply means) for injecting a static elimination fluid, for example, pure water, is provided in a lower container 31 disposed below the spin chuck 21. This is a case where pure water is sprayed on the chuck 21 and the substrate G to cancel out the electric charges charged on the spin chuck 21 and the substrate G, that is, to remove the charges.

In this case, as shown in FIGS. 5 and 6, the lower container 31 is provided with an upright wall 31b on the inner peripheral side of a horizontal bottom portion 31a below the spin chuck 21 and a pure water supply nozzle 50. Is prevented from entering the rotation shaft 26 of the spin chuck 21. In order to completely prevent intrusion of pure water into the rotating shaft 26, for example, N2 gas, air, or the like may be flowed through a gap between the rotating shaft 26 and the container 30 to make the rotating shaft 26 a positive pressure atmosphere. Good.

At another position below the spin chuck 21, for example, at a position facing the pure water supply nozzle 50, a drying gas for supplying a dry gas, for example, a nitrogen (N 2) gas toward the spin chuck 21 and the substrate G is provided. Gas supply nozzle 5
1 is provided. By injecting N2 gas between the spin chuck 21 and the substrate G from the dry gas supply nozzle 51, drying of the portion where the spin chuck 21 and the substrate G are wet by the pure water injected from the pure water supply nozzle 50 is performed. Can be promoted.

In the second embodiment, the other parts are the same as those in the first embodiment, and the same parts are denoted by the same reference numerals and description thereof will be omitted.

With the above-described structure, when the spin chuck 21 is rotated at a high speed to blow off the developing solution and the rinsing solution adhered on the surface of the developed substrate G by centrifugal force and dry, the pure water supply nozzle is used. Spin chuck 2 from 50
Pure water is sprayed on the substrate 1 and the substrate G to remove electricity from the spin chuck 21 and the substrate G. At the same time as the injection of pure water, the drying gas,
By injecting the gas between the spin chuck 21 and the substrate G, the spin chuck 21 and the back surface of the substrate G wet with pure water can be dried. Note that the injection timing of the N2 gas injected from the dry gas supply nozzle 51 does not necessarily need to be simultaneous with the supply of pure water, and may be delayed from the supply of pure water or after the supply of pure water is stopped. You may do so. Further, the supply of the N2 gas may be continuously performed even after the supply of the pure water is stopped.

Other Embodiments ( 1 ) In the above embodiment, the case where the fluid for static elimination is ionized gas or pure water has been described. However, such a fluid is not necessarily required to be such a fluid. The charge may be removed by irradiating the charged substrate G and the spin chuck 21 with soft X-rays instead of the gas, and a volatile liquid such as isopropyl alcohol (IPA) may be used instead of pure water. It can also be used. By using a volatile liquid such as IPA as the static elimination fluid, the need for a dry gas supply unit can be obviated, so that the number of components can be reduced and the size of the apparatus can be reduced. Further, as the drying gas, purified air may be used instead of the N2 gas.

( 2 ) In the above embodiment, the case where the processing apparatus according to the present invention is applied to an LCD substrate developing apparatus has been described. However, other than the developing apparatus, for example, a resist coating apparatus, a semiconductor wafer other than the LCD substrate, a CD, etc. Needless to say, the present invention can be applied to a processing apparatus for processing an object to be processed.

[0044]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a conventional aluminum alloy spin chuck, a synthetic resin spin chuck according to the present invention, and a charge elimination fluid, for example, an ionized gas, are supplied to check the charge amount of the spin chuck when the charge is eliminated. The experimental results will be described.

★ Experimental conditions ・ Comparative example: Spin chuck made of aluminum alloy ・ Example 1: Polyphenylene sulfide (PPS)
Spin chuck (see FIG. 4) The diameter D of the mounting portion 21a = 300 mmφ, the thickness H = 9 mm, the diameter d of the boss portion 21b d = 30 mmφ, and the thickness h = 30 mm. Second Embodiment: Ionization of the spin chuck of the first embodiment Irradiated with rinsed gas, rinse time: 20 seconds.

The relationship between the number of processed substrates G and the amount of charge (potential) was examined using the comparative example, Example 1 and Example 2 under the same conditions for developing the substrate G. FIG. The results shown were obtained.

As a result of the above license, when the conventional aluminum alloy spin chuck was used, the potential was about -4.5 to -5 kV regardless of the number of substrates G processed. On the other hand, in the PPS spin chuck of Example 1, the potential at the start of the process was about +1 kV,
When the number of processed sheets was increased to 10 sheets, the potential gradually increased to about 1.5 kV. It should be noted that the potential did not change much even when 10 or more sheets were processed. In contrast, in the case of Example 2, the potential of the substrate G was about 0 kV, and it was found that the substrate G had a sufficient charge-suppressing effect.

[0048]

As described above, according to the present invention,
With the configuration described above, the following effects can be obtained.

1) According to the first or second aspect of the invention,
Since the electrostatic capacitance of the mounting portion of the holding means can be reduced and the charging of the substrate to be processed can be suppressed, it is possible to prevent electrostatic damage such as electrostatic destruction of devices formed on the substrate to be processed. At the same time, it is possible to prevent a discharge noise disturbance to the control system of the transfer means due to noise due to a discharge phenomenon from the substrate to be processed to the transfer means.

2) According to the third or fourth aspect of the present invention,
In addition to the above 1), it is possible to eliminate the charge on the holding means.
It is possible to prevent static hindrance such as an electrostatic breakdown of devices formed on a substrate to be processed more reliably, discharge noise damage to the control system of the transport means due to noise due to the discharge phenomenon to the conveying means from the target substrate Can be prevented.

3) According to the fifth aspect of the present invention, since the dry gas is supplied from the dry gas supply means toward the holding means and the substrate to be processed , the liquid supplied from the current removing element supply means is supplied. With the fluid for static elimination, drying of the portion where the holding means and the substrate to be processed are wet can be promoted.

4) According to the invention described in claim 6, the holding hand
By supplying a neutralizing volatile liquid to the step and the substrate to be processed
This eliminates the need to supply dry gas,
Reduce the number of components and reduce the size of the device
Can be .

5) According to the invention described in claim 7, the holding hand
The gap between the rotating shaft of the step and the container surrounding the substrate to be processed
The raw gas is made to flow through the air to make the rotating shaft side a positive pressure.
To prevent the static elimination liquid from entering the rotating shaft.
I can .

[Brief description of the drawings]

FIG. 1 is a perspective view showing a coating / developing processing system incorporating a processing apparatus according to the present invention.

FIG. 2 is a schematic sectional view showing a first embodiment of a processing apparatus according to the present invention.

FIG. 3 is a schematic plan view taken along line AA of FIG. 2;

4A is a schematic side view showing a spin chuck according to the present invention, and FIG. 4B is an equivalent circuit diagram when the substrate and the spin chuck are charged.

FIG. 5 is a schematic sectional view showing a second embodiment of the processing apparatus according to the present invention.

FIG. 6 is a sectional view showing a main part of the second embodiment.

FIG. 7 is a graph showing the relationship between the number of processed wafers and the potential when a conventional spin chuck, a spin chuck according to the present invention, and a static elimination fluid are supplied.

[Explanation of symbols]

G LCD substrate (substrate to be processed) 10a Main arm (transfer arm) 21 Spin chuck (holding unit) 21a Placement unit 21b Rotating shaft mounting boss unit 22 Developer supply nozzle (treatment liquid supply unit) 23 Cleaning liquid supply nozzle 25 Ionizer (Electric neutralization fluid supply means) 50 Pure water supply nozzle (Electric neutralization fluid supply means) 51 Dry gas supply nozzle (Dry gas supply means)

──────────────────────────────────────────────────続 き Continuing on the front page (72) Mitsuhiro Sakai Inventor 272-4 Heizu Takao, Otsu-cho, Kikuchi-gun, Kumamoto Prefecture Inside the Otsu Office of Tokyo Electron Kyushu Co., Ltd. Large-scale Takaono character Heisei 272-4 Tokyo Electron Kyushu Co., Ltd. Otsu Office (56) References JP-A-3-205816 (JP, A) JP-A-1-160016 (JP, A) JP-A-56-110940 ( JP, A) JP-A-8-255789 (JP, A) JP-A-5-29296 (JP, A) JP-A-3-215867 (JP, A) JP-A-5-20321 (JP, U) (58) ) Surveyed field (Int.Cl. ⁷ , DB name) H01L 21/027

Claims (7)

(57) [Claims] 1. Transfer of a substrate to and from a transfer arm
Performs teeth, holding means holding and rotating a substrate to be processed, a treatment liquid supply means for supplying a treatment liquid to the surface of the substrate to be processed, the cleaning liquid supply for supplying a cleaning liquid to the surface of the substrate to be processed Bruno
A nozzle, and a static elimination fluid supply unit that supplies a static elimination fluid to at least the holding unit of the holding unit and the processing target substrate.
In the processing apparatus, the holding means is butt central portion of the lower surface of synthetic resin mounting portion
It has a metal rotating shaft mounting boss portion that comes out, and the thickness of the mounting portion is reduced in order to reduce the capacitance of the holding means.
Do not increase the thickness of the boss and make it smaller.
That, the processing unit, characterized in that. 2. The processing apparatus according to claim 1, wherein said synthetic resin is polyphenylene sulfide. 3. The processing apparatus according to claim 1, wherein
In this case, the static elimination fluid supply means is provided above the holding means.
A processing device characterized by the following. 4. The processing apparatus according to claim 1, wherein
In this case, the static elimination fluid supply means is provided below the holding means.
A processing device characterized by the following. 5. The processing device according to claim 1, 2 or 4,
Oite, the neutralization fluid supply means, removing the holding means and the substrate to be processed
It is formed so as to be able to supply an electric liquid, and supplies a dry gas toward the holding means and the substrate to be processed.
Drying gas supply means is further provided.
Equipment. 6. The processing according to claim 1, wherein
In the processing apparatus, the static elimination fluid supply means removes the charge from the holding means and the substrate to be processed.
Characterized in that it is formed to be able to supply volatile liquid for electricity.
Processing equipment. 7. The processing apparatus according to claim 5, wherein
Te, the rotation axis of the holding means, the gap between the container surrounding the holding means and the substrate to be processed, by flowing a nitrogen gas or air,
A processing apparatus, wherein the rotating shaft side is formed so as to be capable of positive pressure.