KR100424851B1 - Wet etching/cleaning apparatus and method for fabricating a semiconductor device - Google Patents

Abstract

The present invention relates to a wet etching / cleaning apparatus and method for manufacturing a semiconductor device, and the present invention further proceeds with a separate "substance adsorbing gas providing process" between a series of cleaning and drying processes, through which a "semiconductor wafer A series of zeta potentials is formed on the surface of the substrate, and this effect prevents the phenomenon that unnecessary foreign substances are adsorbed on the surface of the semiconductor wafer. In this case, water spots caused by foreign matters are suppressed below a certain level.

When the present invention is achieved, since the formation of water spots is minimized, in the production line, various subsequent processes, for example, after the drying process, can be smoothly performed without any problem, and eventually, a defect rate of the semiconductor device. By minimizing this, it is possible to easily obtain the effect that the quality of the finished semiconductor device is improved beyond a certain level.

Description

Wet etching / cleaning apparatus and method for fabricating a semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet etching / cleaning apparatus for manufacturing a semiconductor device, and more particularly, by further carrying out a separate "substance adsorbing gas providing process" between a series of cleaning and drying processes. ZETA potential is formed, and due to this effect, the present invention relates to a wet etching / cleaning apparatus for manufacturing a semiconductor device, which can prevent a phenomenon in which unnecessary foreign substances are adsorbed on the surface of the semiconductor wafer. Furthermore, the present invention relates to a wet etching / cleaning method of a semiconductor device using such a wet etching / cleaning apparatus for manufacturing a semiconductor device.

Recently, with the rapid development of the process technology of semiconductor devices, the degree of integration of semiconductor devices is also gradually increasing.

As such, as the degree of integration of semiconductor devices increases, the technology of stacking multiple types of semiconductor thin films on a silicon wafer in multiple layers has also been rapidly developed. In conjunction with this, the technology of finely etching and processing semiconductor thin films has also been rapidly developed. Doing.

For example, US Patent No. 6090720 "Wet etching method for silicon semiconductor wafer", US Patent No. 6096233 "Method for wet etching of thin film", U.S. Patent No. 6162739, "Process for wet etching of semiconductor wafers," etc., discloses a conventional semiconductor device etching technique, such as a wet etching technique of a semiconductor device in more detail.

Usually, the wet etching process described above, for example, a wet etching process using chemicals such as diluted HF and buffered HF, is completed to remove any etch thin film, for example, an insulating film, and the like. Thus, for example, when a semiconductor wafer made of, for example, monocrystalline silicon, polycrystalline silicon, amorphous silicon, or the like is exposed, a production line, for example, US Pat. No. 5,645,737 "Wet clean for a surface exposed to the silicon / silica interface is exposed. surface having an exposed silicon / silicainterface) ", Korean Patent Laid-Open Publication No. 1998-40060," Wet Cleaning Spin Dryer of Semiconductor Device ", and the like, a series of cleaning processes and drying processes are sequentially performed.

However, since the dilute HF and buffered HF used in the wet etching process described above are known as strong hydrophobic derivation materials, chemicals such as dilute HF and buffered HF are wet etching processes without further action. If directly employed, the surface of the semiconductor wafer is forced to have strong hydrophobicity due to the influence of the chemical, resulting in the formation of zeta potential of a predetermined size or more. This problem is not greatly improved later, even if the cleaning process proceeds.

The zeta potential thus formed adversely affects the quality of the substrate. For example, the zeta potential acts as a series of attraction forces during the drying process, such as foreign matter, such as gas, By proceeding the unnecessary action of attracting debris, dust, etc., the foreign matters are attracted to the surface of the semiconductor wafer.

If foreign matters are adsorbed on the surface of the semiconductor wafer through this process, for example, DI water mist generated by the previous cleaning process will naturally gather in a circle around the foreign matters. There is no choice but to form an unexpected bad factor called "Water Mark".

Over time, these water spots readily combine with the oxygen present around the semiconductor wafer to gradually expand its area, which in turn results in the semiconductor wafer being subjected to a series of subsequent processes, such as an "ion implantation process", a dry etching process. "It's a major obstacle that prevents us from getting back smoothly.

If, on the production line, no action is taken on these water spots, then the production line will suffer serious damage that cannot proceed smoothly with any "desired process" of its purpose. Inevitably, the problem that the quality of semiconductor devices deteriorates is inevitably tolerated.

Accordingly, an object of the present invention is to further proceed with a separate "substance adsorbent gas providing process" between a series of cleaning and drying processes, whereby a series of zeta potentials are formed on the surface of the semiconductor wafer, and this effect Therefore, the phenomenon in which unnecessary foreign substances are adsorbed on the surface of the semiconductor wafer is blocked in advance, thereby suppressing formation of water spots caused by these foreign substances to a predetermined level or less.

Another object of the present invention is to minimize the formation of water spots, for example, to induce the smooth progression of subsequent processes that occur after the drying process.

Another object of the present invention is to minimize the defect rate of the semiconductor device through the smooth progress of the subsequent process, thereby improving the quality of the final semiconductor device to a certain level or more.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

1 is a perspective view showing a wet etching / cleaning apparatus for manufacturing a semiconductor device according to the present invention.

2 is a cross-sectional view of FIG.

Figure 3 is an exemplary view showing the gas outlets of the foreign matter adsorption obstruction gas supply tool according to the present invention.

4 is an enlarged cross-sectional view of portion A of FIG. 2;

In order to achieve the above object, the present invention discloses a wet etching / cleaning device for manufacturing a semiconductor device consisting of a combination of the etching / cleaning solution supply tool, etching / cleaning spinner, foreign matter adsorption preventing gas supply tool. do.

At this time, the etching / cleaning solution supply tool is mounted in a process bath of a predetermined size so as to be movable up, down, left, and right, and requires a predetermined etching solution or cleaning solution introduced from the outside into any semiconductor wafer. Therefore, it selectively serves to supply.

In addition, the etching / cleaning spinner is disposed at the bottom of the above-described etching / cleaning solution supply tool while supporting the previous semiconductor wafer, and a series of etching or cleaning solutions are selectively supplied from the etching / cleaning solution supply tool. In this case, the semiconductor wafer is rotated while supporting the semiconductor wafer to selectively induce etching or cleaning of the semiconductor wafer.

In addition, the foreign matter adsorption preventing gas supply tool is disposed so as to be movable up, down, left and right on the above-mentioned etching / cleaning spinner, covering the entire surface of the semiconductor wafer described above, adsorption of foreign substances introduced into the semiconductor wafer from the outside It serves to selectively supply the interfering gas as needed.

Hereinafter, a wet etching / cleaning apparatus for manufacturing a semiconductor device and a wet etching / cleaning method using the same will be described in detail with reference to the accompanying drawings.

As shown in FIG. 1, the wet etching / cleaning apparatus 100 for manufacturing a semiconductor device according to the present invention is largely an etching / cleaning solution supply tool 30, an etching / cleaning spinner 20, and a foreign matter adsorption preventing gas supply tool. (10) and the like. In this case, the above etching / cleaning solution supply tool 30, the etching / cleaning spinner 20, the foreign matter adsorption-interrupting gas supply tool 10, and the like are all collectively mounted inside the process bath 101.

In this case, the above etching / cleaning solution supply tool 30 may be, for example, a combination of an etching / cleaning solution inlet pipe 31, an etching / cleaning solution supply pipe 34, and an etching / cleaning solution supply outlet 32, 33, or the like. Is done.

Here, the etching / cleaning solution inlet tube 31 receives, for example, an etching solution C such as dilute HF and buffered HF, and a cleaning solution W such as pure water from the outside, and delivers the same to the inside of the tool. The etching / cleaning solution supply pipe 34 serves to deliver the etching / cleaning solution C and W to the etching / cleaning solution supply outlets 32 and 33 via the etching / cleaning solution inlet pipe 31. In addition, the etching / cleaning solution supply outlets 32 and 33 may be used to process the semiconductor wafers (eg, the etching / cleaning solutions C and W) which are disposed in the process bath 101 through the etching / cleaning solution supply pipe 34. 1) to supply directly to.

In this case, the etching / cleaning solution supply tool 30 has a structure connected to a series of driving devices (not shown), and in this state, when a series of driving commands are transmitted from an external controller (not shown), the process bath 101 You can move quickly up, down, left, and right.

Here, when the full-scale "semiconductor wafer etching process progress time" arrives, the etching / cleaning solution supply tool 30 enters the upper portion of the semiconductor wafer 1 through the above driving device, and the etching / cleaning solution flows in. By selectively supplying the predetermined etching solution C to the semiconductor wafer 1 by utilizing the pipe 31, the etching / cleaning solution supply pipe 34, the etching solution supply outlet 32, and the like, The etching target thin film formed in 1) can be removed more easily.

In addition, when the full "semiconductor wafer cleaning process progress point" arrives, the etching / cleaning solution supply tool 30 enters the upper portion of the semiconductor wafer 1 through the above driving device, and the etching / cleaning solution flows in. By selectively supplying the predetermined cleaning solution W to the semiconductor wafer 1 by utilizing the pipe 31, the etching / cleaning solution supply pipe 34, the cleaning solution supply outlet 33, and the like, for example, the semiconductor to be processed. The etching solution C remaining on the wafer 1 can be more easily removed.

Meanwhile, as shown in the drawing, the above-described process target semiconductor wafer 1 forms a structure seated on the head 23 of the etching / cleaning spinner 20. In this state, a full "semiconductor wafer etching process", a "semiconductor wafer cleaning process", and the like are selectively performed. Accordingly, a series of etching solutions (C) or cleaning are performed from the above-mentioned etching / cleaning solution supply tool 30. When the solution W is selectively supplied, the etching / cleaning spinner 20 performs a high speed rotation operation while supporting the semiconductor wafer 1, whereby etching or cleaning of the semiconductor wafer 1 is selectively performed. To be derived. In this case, the motor 21 rapidly drives the spin pipe 22 of the etch / clean spinner 20 under the control of an external controller, thereby performing a series of spin motions to which the etch / clean spinner 20 is applied. Ensure stable operation.

At this time, the foreign matter adsorption-interrupting gas supply tool 10 forming the gist of the present invention is disposed above the etching / cleaning spinner 20 described above. In this case, the foreign matter adsorption preventing gas supply tool 10 covers the entire surface of the semiconductor wafer 1, and predetermined foreign matter adsorption preventing gas G introduced from the outside, for example, nitrogen gas, argon gas, and helium gas. It serves to select and supply an inert gas, such as, etc., to the preceding semiconductor wafer 1 under external control.

Here, the foreign matter adsorption preventing gas supply tool 10 has a structure connected to a series of driving devices, similar to the etching / cleaning solution supply tool 30 described above, in this state, a series of driving commands from the external controller is transmitted. If so, it can be quickly moved up, down, left and right of the etching / cleaning spinner (20).

At this time, as shown in Figure 2, the foreign matter adsorption preventing gas supply tool 10 is a loop (Roof: 14) is equipped with an inlet pipe 11, the bottom (Bottom: 13) mounted on the bottom surface of the loop (14) ), A combination of gas outlets 12 which selectively open this bottom 13. In this case, the front bottom 13 forms, for example, an outer line roundly rounded to the inside of the loop 14, and the gas outlets 12 are arranged to extend outwardly from the center of the bottom 13. Form a structure.

Here, the inlet pipe 11 receives the foreign matter adsorption preventing gas (G), such as nitrogen gas, argon gas, helium gas, and the like, serves to supply the inside of the loop 14, and the loop 14. And the bottom 13 serve to define an inflow space of the foreign matter adsorption-interrupting gas G via the inflow pipe 11 by a combination with each other to a predetermined size, and the gas outlets 12 are inflow spaces. It serves to guide the external output state of the adsorbed obstructive gas filled with foreign matter.

In this state, when a full-scale "foreign foreign matter adsorption-interrupting gas output process progress point" arrives, the foreign matter-sorption preventing gas supply tool 10 enters the upper portion of the semiconductor wafer 1 through the above-mentioned driving device and flows in. By selectively supplying the foreign matter adsorption preventing gas G to the semiconductor wafer 1 by utilizing the pipe 11, the gas output port 12, and the like, the surface of the semiconductor wafer 1 can be more easily absorbed by the foreign matter adsorption preventing gas ( G) It can be converted to the original atmosphere (Surrounding).

Hereinafter, the semiconductor device wet etching / cleaning method inherent in the present invention using the wet etching / cleaning apparatus for semiconductor device manufacturing having the above-described configuration will be described in detail.

First, in the present invention, the process target semiconductor wafer 1 for receiving a series of wet etching / cleaning processes is mounted on the head 23 of the etching / cleaning spinner 20.

Then, the etch / clean solution supply tool 30 enters the upper portion of the semiconductor wafer 1, for example, the center portion of the semiconductor wafer 1, by transmitting a series of driving commands to the driving device through an external controller. Of course, before the etching / cleaning solution supply tool 30 enters the upper portion of the semiconductor wafer 1, the foreign matter adsorption preventing gas supply tool 10 is quickly moved from the upper portion of the semiconductor wafer 1 to a predetermined position. Transferred.

Then, in the present invention, by supplying the etching solution (C), such as dilution HF, buffer HF, etc. to the etching / cleaning solution inflow pipe (31), the etching solution (C) is an etching / cleaning solution supply pipe (34), Through the etching solution supply outlet 32 and the like to be quickly output to the upper portion of the semiconductor wafer 1, through this process, a certain amount of etching solution (C) can be dropped on the upper portion of the semiconductor wafer (1). Make sure

When the etching solution C such as dilution HF, buffer HF, etc. is dropped on the upper portion of the semiconductor wafer 1 through the above process, in the present invention, a series of driving commands are immediately sent to the motor 21 through an external controller. This allows the spin pipe 22 of the etch / clean spinner 20 connected to this motor 21 to rotate quickly, thereby allowing the semiconductor 23 to be placed on the head 23 of the etch / clean spinner 20. The wafer 1 may be more easily subjected to a given series of spin processes.

When such a spin process is performed for a predetermined time, for example, about 1 second to about 10 seconds, a certain amount of the etching solution C dropped on the semiconductor wafer 1 is transferred to the semiconductor wafer (by the centrifugal force of the etching / cleaning spinner 20). It quickly spreads to the outside of 1), and finally, the etching target thin film formed on the semiconductor wafer 1 is easily removed from the semiconductor wafer 1 by the action of the etching solution C.

On the other hand, if any of the etching target thin film is removed from the semiconductor wafer 1 through the above-described process, immediately in the present invention, the etching / cleaning solution inlet tube 31 to the cleaning solution (W), for example, pure water By supplying, the cleaning solution W can be quickly outputted to the upper portion of the semiconductor wafer 1 via the etching / cleaning solution supply pipe 34, the cleaning solution supply outlet 33, and the like. A predetermined amount of the cleaning solution W may be dropped on the semiconductor wafer 1.

Through the above process, if the cleaning solution (W) such as pure water is dropped on the upper portion of the semiconductor wafer 1, in the present invention, immediately by transmitting a series of driving commands to the motor 21 through an external controller, the motor The spin pipe 22 of the etch / clean spinner 20 connected to the 21 may rotate rapidly, thereby allowing the semiconductor wafer 1 to be placed on the head 23 of the etch / clean spinner 20. It makes it easier to proceed with a given series of spin processes.

When such a spin process is performed for a predetermined time, for example, about 18 seconds to about 22 seconds, the predetermined amount of the cleaning solution W dropped on the semiconductor wafer 1 is transferred to the semiconductor wafer (by the centrifugal force of the etching / cleaning spinner 20). It quickly spreads to the outside of 1), and finally, the etching solution C remaining in the semiconductor wafer 1 is easily removed from the semiconductor wafer 1 by the action of the cleaning solution W.

On the other hand, when the etching solution (W) is removed from the semiconductor wafer 1 through the above-described process, in the present invention, immediately by sending a series of driving commands to the drive device through the external controller, foreign matter adsorption disruption gas The feed tool 10 enters the upper portion of the semiconductor wafer 1. Of course, before the foreign matter adsorption preventing gas supply tool 10 enters the upper portion of the semiconductor wafer 1, the etching / cleaning solution supply tool 30 is quickly moved from the upper portion of the semiconductor wafer 1 to a predetermined position. Transferred.

Subsequently, in the present invention, the foreign matter adsorption preventing gas G such as nitrogen gas, argon gas, helium gas, etc. is supplied to the inlet pipe 11, so that the foreign matter adsorption preventing gas G is supplied to the inside of the loop 14. Through the inflow space, the gas output port 12, etc., it can be quickly output to the upper portion of the semiconductor wafer (1).

While the process of supplying the foreign substance adsorption-disrupting gas as described above, in the present invention, by transmitting a series of driving commands to the motor 21 through an external controller, the spin of the etching / cleaning spinner 20 connected to the motor 21. Allow the pipe 22 to rotate quickly, thereby allowing the semiconductor wafer 1 mounted on the head 23 of the etch / clean spinner 20 to more easily undergo a series of spin processes. do.

When the series of "foreign adsorption-interrupting gas supply process" and "spin process" as described above are simultaneously performed for a predetermined time, for example, about 25 seconds to 35 seconds, the surface of the semiconductor wafer 1 becomes By the action of), it is quickly switched to the atmosphere (Surrounding) inherent in the foreign matter adsorption-blocking gas.

In this case, for example, when nitrogen gas is selected as the foreign matter adsorption preventing gas (G), the surface of the semiconductor wafer 1 is switched to a nitrogen atmosphere, and when argon gas, helium gas, etc. are selected as the foreign matter adsorption preventing gas, The surface of the semiconductor wafer is switched to argon atmosphere, helium atmosphere and the like.

On the other hand, when the surface of the semiconductor wafer 1 is converted to the atmosphere inherent to the foreign matter adsorption-blocking gas (G) through the above-described process, in the present invention, the semiconductor wafer 1 is immediately wet-etched / cleaned spinner 20 After unloading, the semiconductor wafer 1 is loaded into, for example, a drying spinner, a drying chamber, or the like, so that the semiconductor wafer 1 can undergo a series of drying processes quickly.

At this time, as mentioned above, in the present invention, unlike the prior art, at a point before the full-blown drying process proceeds, a series of "adsorption preventing gas supply processes" are performed in advance, so that the surface of the semiconductor wafer 1 is "corresponded." When the present invention is achieved, the semiconductor wafer 1 to be processed is induced because it can be switched to the inherent atmosphere possessed by the foreign matter adsorption preventing gas G, for example, a "nitrogen atmosphere, an argon atmosphere, a helium atmosphere," or the like. Due to the action of the foreign matter adsorption preventing gas (G), even if its surface is in the zeta potential state, irrespective of this, it is possible to block the phenomenon in which unnecessary foreign matters are adsorbed. The formation of water spots as a cause can be blocked at source.

Through this process, when the formation of water spots is blocked in advance, in the production line, a series of subsequent processes, such as an “ion implantation process” and a dry etching process, which proceed after the drying process, are performed smoothly without any problems. As a result, the defect rate of the semiconductor device can be minimized, so that an effect of greatly improving the quality of the finally completed semiconductor device by a certain level or more can be easily obtained.

At this time, as shown in FIG. 2, in the present invention, the bottom 13 constituting the foreign matter adsorption preventing gas supply tool 10 is implemented in a size that can cover the entire surface of the semiconductor wafer 1. In addition, by forming the outline line rounded inwardly, the semiconductor wafer 1 to be processed is removed from the foreign matter adsorption-interrupting gas supply tool 10 when the above-mentioned "foreign substance adsorption-interrupting gas supply process" is performed. It is to make it easy to provide a series of infrastructure that can be supplied evenly over its entire surface without any weak spots.

Meanwhile, in the present invention, the gas output ports 12 of the foreign matter adsorption preventing gas supply tool 10 are formed to have a structure in which "the size changes as the center of the bottom 13 unfolds outward."

For example, in the present invention, as shown in FIG. 3, the gas outlets 12 are formed in a "structure whose size gradually increases as it is unfolded outward from the center of the bottom 13". In this case, the gas outlet 12b formed at the outer side of the bottom 13 maintains a larger size than the gas outlet 12a formed at the center of the bottom.

In this case, the gas outlet 12a adjacent to the inlet pipe 11, the gas outlet 12b, etc., which are separated from the inlet pipe 11 by a predetermined distance, are all different. In this way, the semiconductor wafer 1 to be processed can easily be compensated for the problem that the foreign matter adsorption-disrupting gas G is concentrated and supplied to its central part. You'll be able to achieve even mood swings across your face.

In addition, in the present invention, as illustrated in FIG. 4, a cramp 13a is further formed at the tip of some gas outlets 12, for example, the gas outlets 12b located outside the bottom 13. do. In this case, the bracket 13a guides the output direction of the foreign matter adsorption-disrupting gas G toward the center direction of the bottom 13, that is, the center direction of the process target semiconductor wafer 1.

When such a base environment is provided, the foreign matter adsorption-interrupting gas G output from the foreign matter adsorption-interrupting gas supply tool 50 can concentrate its spraying direction into the effective area of the semiconductor wafer 1 to be processed. In the production line, foreign matter adsorption-disrupting gas is dispersed to the outside of the semiconductor wafer 1, so that the problem of unnecessary waste can be easily solved.

Then, when all of the above-mentioned drying process is completed, in the present invention, the semiconductor wafer to be processed is transferred to, for example, an ion implantation apparatus, a dry etching apparatus, and the like to sequentially perform a series of pre-patterned subsequent processes, thereby providing excellent performance. The semiconductor device of this invention is manufactured and completed.

As described in detail above, the present invention further proceeds with a separate "substance adsorbing interference gas providing process" between a series of cleaning and drying processes, through which a series of zeta potentials are formed on the surface of the semiconductor wafer. , Due to this effect, the phenomenon that unnecessary foreign substances are adsorbed on the surface of the semiconductor wafer " In this case, water spots caused by foreign matters are suppressed below a certain level.

When the present invention is achieved, since the formation of water spots is minimized, in the production line, various subsequent processes, for example, after the drying process, can be smoothly performed without any problem, and eventually, a defect rate of the semiconductor device. By minimizing this, it is possible to easily obtain the effect that the quality of the finished semiconductor device is improved beyond a certain level.

While specific embodiments of the invention have been described and illustrated above, it will be apparent that the invention may be embodied in various modifications by those skilled in the art. Such modified embodiments should not be understood individually from the technical spirit or point of view of the present invention and such modified embodiments should fall within the scope of the appended claims of the present invention.

Claims (6)

It is mounted to move up, down, left, and right inside a processing bath of a certain size, and supplies an etching / cleaning solution that selectively supplies a predetermined etching solution or cleaning solution introduced from an outside into an arbitrary semiconductor wafer as needed. A tool; The semiconductor wafer is supported in a state in which the semiconductor wafer is disposed at the bottom of the etching / cleaning solution supply tool, and a series of etching solutions or cleaning solutions are selectively supplied from the etching / cleaning solution supply tool. An etching / cleaning spinner which rotates in a state to selectively induce etching or cleaning of the semiconductor wafer; Is disposed on the upper part of the etching / cleaning spinner so as to be movable up, down, left and right, the foreign material to cover the entire surface of the semiconductor wafer, and selectively supply a predetermined foreign matter adsorption blocking gas introduced from the outside into the semiconductor wafer, if necessary, A wet etching / cleaning device for manufacturing a semiconductor device, comprising an adsorption-interrupting gas supply tool. According to claim 1, wherein the foreign matter adsorption-interrupting gas supply tool has a loop (Roof) to define the inlet space of the foreign matter adsorption-interrupting gas equipped with an inlet pipe for the inlet of the foreign matter adsorption-interrupting gas; A bottom which forms a rounded outer line and is integrally mounted to the bottom of the loop; Wet etching / arranged in the outward direction from the center of the bottom, and selectively opens the bottom, comprising a plurality of gas outlets for guiding the external output state of the foreign matter adsorption disturbance gas Cleaning device. The wet etching / cleaning apparatus for manufacturing a semiconductor device according to claim 1 or 2, wherein the foreign matter adsorption preventing gas is an inert gas. The wet etching / cleaning apparatus of claim 2, wherein the gas outlets increase in size as they extend outwardly from the center of the bottom. The wet etching / cleaning process of claim 2, wherein a portion of the gas outlets further includes a cramp for guiding an output direction of the foreign matter adsorption preventing gas toward a center of the bottom. Device. Dropping a series of etching solutions on top of an arbitrary semiconductor wafer, and then rotating the semiconductor wafer to remove a predetermined etching target thin film formed on the semiconductor wafer; Dropping a series of cleaning solutions on the semiconductor wafer from which the etch target thin film has been removed, and rotating the semiconductor wafer to remove the etching solution remaining on the semiconductor wafer; Supplying a series of foreign matter adsorption preventing gases to the upper portion of the semiconductor wafer from which the etching solution is removed, and rotating the semiconductor wafer to convert the surface of the semiconductor wafer into an inherent atmosphere of the foreign matter adsorption preventing gases; Wet etching / cleaning method of a semiconductor device comprising a.