JP3307361B2 - 高周波バイポーラトランジスタ - Google Patents

高周波バイポーラトランジスタ

Info

Publication number
JP3307361B2
JP3307361B2 JP12009099A JP12009099A JP3307361B2 JP 3307361 B2 JP3307361 B2 JP 3307361B2 JP 12009099 A JP12009099 A JP 12009099A JP 12009099 A JP12009099 A JP 12009099A JP 3307361 B2 JP3307361 B2 JP 3307361B2
Authority
JP
Japan
Prior art keywords
electrode
collector
bipolar transistor
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12009099A
Other languages
English (en)
Other versions
JP2000311976A (ja
Inventor
博 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP12009099A priority Critical patent/JP3307361B2/ja
Priority to DE10019250A priority patent/DE10019250A1/de
Priority to KR10-2000-0022372A priority patent/KR100447460B1/ko
Publication of JP2000311976A publication Critical patent/JP2000311976A/ja
Application granted granted Critical
Publication of JP3307361B2 publication Critical patent/JP3307361B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、高周波バイポーラ
トランジスタに係わり、特に、遮断周波数を上昇させ、
高周波特性を改善した高周波バイポーラトランジスタに
関する。
【０００２】
【従来の技術】主な高周波特性である遮断周波数ｆＴは
次式で示される。 ｆＴ＝１／２π（τｅ＋τｂ＋τｃ＋τｘ） τｅ＝ｋＴＣｔｅ／ｑＩｃ τｂ＝ＷＢ２／ＮＤｎ Ｄｎ＝ｋＴμＢ τｃ＝ｒｃｓ＊Ｃｃｂ τｘ＝Ｘｓ／２ｖｘ ここで、ｋ：ボルツマン定数 Ｔ：絶対温度 Ｃｔｅ：エミッタ容量 ｑ ：電子の単位電価量 Ｉｃ ：コレクタ電流 ＷＢ：ベース幅 Ｎ ：定数 μＢ：電子の移動度 ｒｃｓ：コレクタ対抗 Ｃｃｂ：コレクタ容量 Ｘｓ ：コレクタ空乏層幅 ｖｘ ：コレクタ空乏層走行飽和速度 このように、ｆＴは、コレクタ容量によって増減する。
コレクタ容量を極力小さくすることがｆＴ向上には望ま
しいが、実際の半導体装置には能動部のコレクタ容量だ
けでなくパッケージによる容量、即ち、寄生容量が存在
し、ｆＴ向上のさまたげになっている。例えば、図３に
示した特開平６−２２４３２０号公報のトランジスタで
は、ベース電極１１とコレクタ電極１３とが隣り合うか
ら、１．０ｍｍ×０．５ｍｍサイズのパッケージでは、
０．１ｐＦのパッケージ寄生容量が存在し、この為、遮
断周波数の上昇には、限度があった。
【０００３】
【発明が解決しようとする課題】本発明の目的は、上記
した従来技術の欠点を改良し、特に、遮断周波数を上昇
させ、高周波特性を改善した新規な高周波バイポーラト
ランジスタを提供するものである。
【０００４】
【課題を解決するための手段】本発明は上記した目的を
達成するため、基本的には、以下に記載されたような技
術構成を採用するものである。即ち、本発明に係わる高
周波バイポーラトランジスタの態様は、半導体チップ
と、リードフレームのベース、コレクタ、エミッタ電極
と、前記半導体チップのボンディングパッドと前記各電
極とを接続するボンディングワイヤと、これらを封止す
る封止樹脂とで構成したエミッタ接地回路で用いるリー
ドレスパッケージ構造の高周波バイポーラトランジスタ
において、前記半導体チップを前記エミッタ電極上に配
置し、前記エミッタ電極を挟んで、前記ベース電極、前
記コレクタ電極を設け、前記各電極を前記封止樹脂の側
面の内側に存在するように配置し、前記各電極の一部を
前記封止樹脂の下面のみから露出せしめたことを特徴と
するものである。
【０００５】
【発明の実施の形態】本発明に係わる高周波バイポーラ
トランジスタは、半導体チップと、この半導体チップの
ベース、コレクタ、エミッタ電極と、前記半導体チップ
のボンディングパッドと前記各電極とを接続するボンデ
ィングワイヤと、これらを封止する封止樹脂とで構成し
た高周波バイポーラトランジスタにおいて、前記半導体
チップをエミッタ電極上に配置し、前記エミッタ電極を
挟んで、ベース電極、コレクタ電極を設けたことを特徴
とするものである。
【０００６】本発明のトランジスタは、特に、エミッタ
接地回路に用いて顕著な効果を奏する。
【０００７】
【実施例】以下に、本発明に係わる高周波バイポーラト
ランジスタの具体例を図面を参照しながら詳細に説明す
る。 （第１の具体例）図１（ａ），（ｂ）は、本発明に係わ
る高周波バイポーラトランジスタの第１の具体例の構造
を示す図であって、これらの図には、半導体チップ１
と、この半導体チップ１のベース、コレクタ、エミッタ
電極３、４、２と、前記半導体チップ１のボンディング
パッドと前記各電極３、４、２とを接続するボンディン
グワイヤ６、７、５と、これらを封止する封止樹脂８と
で構成した高周波バイポーラトランジスタにおいて、前
記半導体チップ１をエミッタ電極２上に配置し、前記エ
ミッタ電極２を挟んで、ベース電極３、コレクタ電極４
を設けたことを特徴とする高周波バイポーラトランジス
タが示されている。
【０００８】また、前記夫々の電極の一部を封止樹脂８
より露出せしめたリードレスパッケージであることを特
徴とする高周波バイポーラトランジスタが示され、更
に、前記電極２、３、４は、封止樹脂８の一方の面８ａ
にのみ露出せしめた高周波バイポーラトランジスタが示
されている。以下に、第１の具体例を図１を用いて、更
に詳細に説明する。
【０００９】エミッタ電極２は、ベース電極３とコレク
タ電極４の間にあり、エミッタ電極２、ベース電極３、
コレクタ電極４の一端は、封止樹脂８より一部が露出し
ており、本発明の本半導体装置を基板（図示していな
い）に実装する際、基板の配線パターンと接触するよう
に構成している。エミッタ電極２上に半導体チップ１が
搭載され、チップ１上のエミッタボンディングパッドと
エミッタ電極２とがエミッタボンディングワイヤ５を介
し接続され、チップ１上のベースボンディングパッドと
ベース電極３とがベースボンディングワイヤ６を介し接
続され、同様に、チップ１上に形成されたコレクタボン
ディングパッドとコレクタ電極４とはコレクタボンディ
ングワイヤ７を介し接続されている。
【００１０】エミッタ電極２、ベース電極３、コレクタ
電極４の一端は、封止樹脂８より下方に露出しており、
基板に実装される際、基板の引き出し電極と接触する。
また、エミッタ電極２、ベース電極３、コレクタ電極４
を、半導体装置上面から見た場合、樹脂８の内側に存在
し、樹脂８の外側には存在しない（図１）。次に、本発
明の半導体装置の製造方法について説明する。
【００１１】初めに、銅製のリードフレームのエミッタ
電極となる部分を写真食刻法を用いて０．０５ｍｍエッ
チングし、凹部を形成する。続いて、銀をリードフレー
ムにめっきし、金型を用いたプレス法でベース電極３、
エミッタ電極２、コレクタ電極４に分離する。続いて、
チップ１を銀ペースト等の接続材を用いて、エミッタ電
極２上に搭載する。接続材はこの他、金アンチモンや金
すずや、金シリコン共晶などを用いてもよい。次に、金
線からなるベースボンディングワイヤ６、コレクタボン
ディング７、エミッタボンディングワイヤ５を用いて、
チップ１上に設けたベースボンディングパット、エミッ
タボンディングパット、コレクタボンディングパットと
ベース電極３、エミッタ電極２、コレクタ電極４とを夫
々接続する。
【００１２】次に、縦１ｍｍ、横０．５ｍｍ、高さ０．
３ｍｍとなるように封入金型を用いて、エポキシ系樹脂
を金型に封入し、整形する。この際、樹脂の外に余分に
はみ出していたベース電極３、エミッタ電極２、コレク
タ電極４は切り取られる。この整形はダイシング法を用
いる。最後に、露出しているベース電極３、エミッタ電
極２、コレクタ電極４上を半田めっきし、ベース電極
３、エミッタ電極２、コレクタ電極４に半田層を形成す
る。
【００１３】図３の従来例の場合、１．０ｍｍ×０．５
ｍｍサイズのパッケージでは、０．１ｐＦのパッケージ
寄生容量が存在したが、この具体例では、０．０１ｐＦ
であり、従来の１／１０にすることが出来た。また、上
記トランジスタをエミッタ接地で用いる場合、従来のト
ランジスタのＣｃｂが０．０５ｐＦの場合、ｆTが２０
ＧＨｚであるのに対し、本具体例の半導体装置では、２
５ＧＨｚと良好な値を得ることが出来た。 （第２の具体例） 図２（ａ），（ｂ）は、本発明に係わる高周波バイポー
ラトランジスタの第２の具体例の構造を示す図であっ
て、これらの図には、前記半導体チップ１をコレクタ電
極４上に配置し、前記エミッタ電極２を挟んで、ベース
電極３、コレクタ電極４を設けたことを特徴とする高周
波バイポーラトランジスタが示されている。
【００１４】この場合、各ボンディグワイヤはインダク
タンスを小さくするため、複数本形成できるから、利得
も更に向上できる等の効果を有する。
【００１５】
【００１６】
【発明の効果】本発明に係わる高周波バイポーラトラン
ジスタは、上述のように構成したので、特に、エミッタ
接地回路で用いた場合、コレクタ容量が小さくなり、従
って、遮断周波数が上昇し、高周波特性を改善すること
が出来る。
【図面の簡単な説明】
【図１】本発明に係わる高周波バイポーラトランジスタ
の第１の具体例を示す図である。
【図２】本発明の第２の具体例を示す図である。
【図３】従来例を示す図である。
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平10−247713（ＪＰ，Ａ) 特開 昭59−208756（ＪＰ，Ａ) 特開 平11−3953（ＪＰ，Ａ) 特開 昭63−146453（ＪＰ，Ａ) 特開 平10−98133（ＪＰ，Ａ) 特開 平９−237882（ＪＰ，Ａ) 特開 平６−224320（ＪＰ，Ａ) 特開 平９−298256（ＪＰ，Ａ) 特開 昭62−281458（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/48

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】 半導体チップと、リードフレームのベー
    ス、コレクタ、エミッタ電極と、前記半導体チップのボ
    ンディングパッドと前記各電極とを接続するボンディン
    グワイヤと、これらを封止する封止樹脂とで構成したエ
    ミッタ接地回路で用いるリードレスパッケージ構造の高
    周波バイポーラトランジスタにおいて、 前記半導体チップを前記エミッタ電極上に配置し、前記
    エミッタ電極を挟んで、前記ベース電極、前記コレクタ
    電極を設け、前記各電極を前記封止樹脂の側面の内側に
    存在するように配置し、前記各電極の一部を前記封止樹
    脂の下面のみから露出せしめたことを特徴とする高周波
    バイポーラトランジスタ。
JP12009099A 1999-04-27 1999-04-27 高周波バイポーラトランジスタ Expired - Fee Related JP3307361B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12009099A JP3307361B2 (ja) 1999-04-27 1999-04-27 高周波バイポーラトランジスタ
DE10019250A DE10019250A1 (de) 1999-04-27 2000-04-18 Bipolarer Hochfrequenztransistor
KR10-2000-0022372A KR100447460B1 (ko) 1999-04-27 2000-04-27 고주파 바이폴라 트랜지스터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12009099A JP3307361B2 (ja) 1999-04-27 1999-04-27 高周波バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
JP2000311976A JP2000311976A (ja) 2000-11-07
JP3307361B2 true JP3307361B2 (ja) 2002-07-24

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Country Status (3)

Country Link
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KR (1) KR100447460B1 (ja)
DE (1) DE10019250A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5410465B2 (ja) * 2011-02-24 2014-02-05 ローム株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260563A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp トランジスタ用パッケージ

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KR100447460B1 (ko) 2004-09-07
KR20000077094A (ko) 2000-12-26
DE10019250A1 (de) 2001-03-15

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