JP3306196B2 - Microwave integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave integrated circuit device, and more particularly to a microwave integrated circuit device in which a conductive line forming an impedance element is provided around a monolithic microwave integrated circuit element.

[0002]

2. Description of the Related Art In recent years, there has been an increasing demand for high-frequency related devices in the quasi-microwave and microwave band such as satellite broadcasting, car phones, mobile phones, and data transmission systems, and various amplifiers and mixers used in these devices. Microwave integrated circuit devices incorporating devices such as oscillators have been developed and are being put into practical use. In particular, there is a strong demand for miniaturization of microwave integrated circuit devices used in mobile phones and the like, and development for this purpose is being actively conducted.

In such a quasi-microwave or microwave band, a monolithic microwave integrated circuit (hereinafter abbreviated as MMIC) element constituting a microwave integrated circuit device and this MMIC
If the impedance matching with the circuit connected to the element is insufficient, transmission loss of signal power occurs between them. Therefore, it is necessary to provide an impedance element such as an impedance transformer between the MMIC element and a circuit connected to the MMIC element to achieve impedance matching.

[0004] This impedance transformer is
For example, “18 GHz _Z- band Uniplanar MMIC High-Power Amplifier” (1990 IEICE Spring Convention C-
63).

FIG. 4 is an equivalent circuit diagram of the impedance transformer. The impedance transformer has a configuration in which both ends of a conductive line 30 having a characteristic impedance of Z and an electric length θ are grounded via capacitors 31 and 32 having a capacitance C, respectively. In order to convert the input impedance Z _IN to the output impedance Z _OUT at the transmission frequency f, the characteristic impedance Z, the electrical length θ, and the capacitance C need to satisfy the relationship represented by the following equation (1).

[0006]

(Equation 1)

Therefore, for example, f = 1GH _Z , Z _IN = 30
When Ω and Z _OUT = 50Ω, the above equation (1) indicates that the impedance transformer is Z = 110Ω, θ = 20 degrees,
It can be seen that C = 4 pF is sufficient. 2 of this electrical length θ
Zero degrees corresponds to about 7 mm in terms of the physical length of a conductive wire in a vacuum, and such an impedance transformer is too large to be incorporated in an MMIC device. Therefore, in the conventional microwave integrated circuit device, as shown in FIG. 5, for example, an impedance element 43 composed of an impedance transformer is provided separately from a substrate 41 accommodating an MMIC element 40 and a substrate 42 accommodating a subsequent-stage circuit element. It was placed on a body substrate 44.

[0008]

However, when the impedance element 43 is separately provided outside the substrate 41 as described above, the length of the conductive wire is long and the size of the conductive element is large. There is a problem that the wave integrated circuit device becomes large.

The present invention has been made in view of such a problem, and has as its object to provide a small-sized microwave integrated circuit device having an impedance element.

[0010]

A microwave integrated circuit device according to the present invention comprises a support substrate, a monolithic microwave integrated circuit element mounted substantially at the center of the support substrate, and the monolithic microwave integrated device mounted on the substrate. A conductive line provided at a peripheral portion of the integrated circuit element so as to surround the monolithic microwave integrated circuit element. The conductive line is connected to the monolithic microwave integrated circuit element and the monolithic microwave integrated circuit element. And an impedance transformer for impedance matching with another circuit.

[0011]

According to the structure of the microwave integrated circuit device of the present invention, since the conductive line forming the impedance element is provided in the vicinity of the MMIC element, the impedance element having a long conductive line can be installed in the substrate.

[0012]

An embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional perspective view of the microwave integrated circuit device according to the present embodiment, and FIG. 2 is a top view of the microwave integrated circuit device shown in FIG. FIG. 1 is a broken line A-
FIG. 2 is a cross-sectional perspective view taken along A, not showing details of an MMIC element and a wire bonder.

In FIG. 1 and FIG. 2, reference numeral 1 denotes a support substrate (2.6 m long) made of alumina ceramic (dielectric constant: 9.7).
m, width 3.2 mm, thickness 0.5 mm). The upper left, upper middle, upper right, lower left, and lower right portions of the support substrate 1 are rectangular A having a length of 400 μm and a width of 400 μm, respectively.
u, etc., an input terminal 2, a first ground terminal 3, a bias power supply terminal 4, a local oscillation signal input terminal 5, and an output terminal 6.
Is provided. Further, a second grounding terminal 7 made of substantially T-shaped Au or the like is provided from a central portion to a central lower portion on the support substrate 1.

8 is provided on the center of the second grounding terminal 7.
Semiconductor substrate made of GaAs or the like (1.2 m long)
m, 1.8 mm in width). On this semiconductor substrate 8,
Dual gate field effect transistor T_R , Inductor
L₁ (2 nH), inductor L _Two(7nH), conden
Sa C₁ (2 pF), bias resistor R₁(3kΩ), bi
Ass resistance R_Two (3 kΩ), input part 9, ground part 10, local part
Oscillation signal input unit 11, bias power supply unit 12, ground unit 1
3 and a microwave (10
GH_ZMMIC device consisting of a mixing circuit
Have been killed.

That is, the input section 9 has a dual gate field effect.
Transistor T_R First gate electrode G₁ When connected to
Both capacitors C₁ Dual game via (2pF)
Field effect transistor T_R Integrated with the source electrode S
It is connected to the formed grounding section 10. This first gate
Electrode G₁ Is the bias resistor R₁ (3kΩ) via ground
10 is connected. Dual gate field effect transformer
Jista T_R Second gate electrode G_Two Is the bias resistor R_Two 
(3 kΩ) to the grounding unit 10 and
Nacta L₁ (2nH) through local oscillation signal input 1
1 connected. Dual gate field effect transistor
Star T_R The drain electrode D is an inductor L _Two (7nH)
And connected to the bias power supply terminal section 12 via
Impedance transformer Q (impedance element
) Is connected to the output unit 14.

The impedance transformer Q includes a conductive line P provided on the supporting substrate 1 near the MMIC element and two capacitors C ₂ and C _{3 provided} on the semiconductor substrate 8. . The two capacitors C ₂ and C ₃ are connected to the grounding portion 13 and are electrically connected to both ends of the conductive line P by wire bonding W ₁ and W ₂ , respectively. The conductive line P is connected to the input terminal 2, the first ground terminal 3, the bias power supply terminal 4, the local oscillation signal input terminal 5, the output terminal 6, and the second ground terminal 7 in order to prevent electromagnetic coupling. They are separated by a minimum of about 100 μm.

The input section 9 of the MMIC element and the input terminal 2 of the support substrate 1, the ground section 10 and the first ground terminal 3, the local oscillation signal input section 11 and the local oscillation signal input terminal 5, the bias power section 12 Bias power supply terminal 4, grounding section 13 and second
, And the output unit 14 and the output terminal 6 are respectively connected to the wire bondings W ₃ , W ₄ , W ₅ , W ₆ , W ₇ , W
₈ electrically connected.

[0018] In this embodiment, the input signal of the frequency 11.7GH _Z is input to the input unit 9, by a local oscillation signal of a frequency 10.7GH _Z input from the outside of the local oscillator and a dual gate field effect transistor T _R because the mixing, the transmission frequency f of the impedance transformer Q to be connected to the MMIC device becomes 1GH _Z is the frequency of the mixing signal. Further, the impedance of the microwave mixing circuit provided before the impedance transformer Q is 30Ω, and the impedance of the subsequent circuit connected to the output terminal 6 is 50Ω.
, The input impedance Z _IN and the output impedance Z _OUT are 30Ω and 50Ω, respectively.

In this case, the characteristic impedance Z, the electrical length θ, and the capacitors C ₂ and C _{3 of} the conductive line P constituting the impedance transformer Q are calculated according to the above equation (1).
Are 110Ω, 20 degrees, 4pF and 4pF, respectively.
Becomes This electrical length θ of 20 degrees is about 7 in terms of the physical length of the conductive wire on the support substrate 1 made of alumina ceramic.
mm, and the characteristic impedance Z is 1
In order to set the resistance to 10Ω, for example, a width of 45 μm and a thickness of 3 formed on the support substrate 1 through a metal mask by a vapor deposition method or the like.
A conductor made of μm of Au is used as the conductive line P.

The semiconductor substrate 8 on which the MMIC element is formed as described above is provided at the center of the support substrate 1, and the conductive lines P constituting the impedance transformer Q are formed on the support substrate 1 near the semiconductor substrate 8. Since the capacitors are provided and the capacitors C ₂ and C ₃ are formed on the semiconductor substrate 8, the microwave integrated circuit device having the impedance transformer can be reduced in size.

FIG. 3 shows an equivalent circuit of the microwave integrated circuit device configured as described above.

The input terminal 2 is a capacitor C₁ Through the ground
And a dual gate field effect transistor T
_R First gate electrode G₁ It is connected to the. This first game
Gate electrode G₁ Is the bias resistor R₁ Is grounded through
You. Dual gate field effect transistor T_R Second game
Gate electrode G_Two Is the bias resistor R_Two When grounded through
Both are inductor L₁ Local oscillation signal input terminal 5
It is connected to the. Dual gate field effect transistor
T_R Is grounded. Dual game
Field effect transistor T_R Drain electrode D is
Kuta L_Two Connected to the bias power supply terminal 4 via
In addition, both ends of the conductive line P are connected to the capacitor C, respectively. _Two , C_Three Through
Transformer Q that is grounded
The output terminal 6 is connected to the output terminal 6.

In the above embodiment, the conductive line P of the impedance transformer Q is provided around the support substrate 1 near the semiconductor substrate 8 on which the MMIC element is formed. The same effect can be obtained by increasing the size of 8 and arranging the conductive line P on the semiconductor substrate 8 near the MMIC element.

[0024]

According to the structure of the microwave integrated circuit device of the present invention, the conductive line forming the impedance element is MM.
Since the impedance element is provided in the vicinity of the IC element and is installed in the substrate, it is not necessary to separately install the impedance element outside the substrate. As a result,
The microwave integrated circuit device having the impedance element can be downsized.

[Brief description of the drawings]

FIG. 1 is a sectional perspective view of a microwave integrated circuit device according to one embodiment of the present invention.

FIG. 2 is a top view of the microwave integrated circuit device according to the embodiment.

FIG. 3 is an equivalent circuit diagram of the microwave integrated circuit device according to the embodiment.

FIG. 4 is an equivalent circuit diagram of the impedance transformer.

FIG. 5 is a top view of a microwave integrated circuit device having a conventional impedance transformer.

[Explanation of symbols]

1 supporting substrate C ₁ capacitor C _2, C ₃ capacitors L _1, L ₂ inductor R _1, R ₂ bias resistor P conductive line Q impedance transformer T _R dual-gate field-effect transistor

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasue Harada 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (56) References JP-A-3-76301 (JP, A) JP-A-6-268532 (JP, A) JP-A-63-35303 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01P 3/08 H03F 3/60

Claims (1)

(57) [Claims] 1. A support substrate, a monolithic microwave integrated circuit device attached to a substantially central portion of the support substrate,
A conductive line provided on a peripheral portion of the monolithic microwave integrated circuit element on the substrate so as to surround the monolithic microwave integrated circuit element, wherein the conductive line includes the monolithic microwave integrated circuit element and the monolithic microwave integrated circuit element. A microwave integrated circuit device comprising an impedance transformer for impedance matching with another circuit connected to the microwave integrated circuit element.