JP3286891B2 - Liquid resin sealing and curing method - Google Patents
Liquid resin sealing and curing methodInfo
- Publication number
- JP3286891B2 JP3286891B2 JP11781896A JP11781896A JP3286891B2 JP 3286891 B2 JP3286891 B2 JP 3286891B2 JP 11781896 A JP11781896 A JP 11781896A JP 11781896 A JP11781896 A JP 11781896A JP 3286891 B2 JP3286891 B2 JP 3286891B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid resin
- substrate
- temperature
- sealing
- curing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【0001】[0001]
【発明の属する技術分野】この発明は、熱硬化性エポキ
シ化合物を含有する液体樹脂を用いてベアチップICを
封止し、加熱硬化する液体樹脂封止硬化方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid resin sealing and curing method for sealing a bare chip IC using a liquid resin containing a thermosetting epoxy compound and heating and curing the same.
【0002】[0002]
【従来の技術】従来、基板上にベアチップICを実装
後、液体樹脂にて封止し加熱硬化させる際には、その封
止樹脂の硬化条件により最適硬化温度及び硬化時間が図
2に示すような温度プロファイルで硬化に必要な温度を
一定時間かける熱硬化方法を行っていた。図3は、上記
のような液体樹脂封止硬化方法によりベアチップICを
液体樹脂にて封止した図である。1は、基板、2は、基
板1上にダイボンド3により取り付けられたベアチップ
IC、4は、ベアチップIC2を封入する液体樹脂であ
って、熱硬化性エポキシ化合物を含有する液体樹脂であ
る。5は、液体樹脂4が流れ出すことを防止する拡散防
止セルである。6は、ベアチップIC2と基板1を結ぶ
ワイヤーで液体樹脂4の内部を通って配置されている。2. Description of the Related Art Conventionally, when a bare chip IC is mounted on a substrate and then sealed with a liquid resin and heat-cured, the optimum curing temperature and curing time are determined according to the curing conditions of the sealing resin as shown in FIG. A thermal curing method in which a temperature required for curing is applied for a certain period of time with a simple temperature profile. FIG. 3 is a diagram in which a bare chip IC is sealed with a liquid resin by the above liquid resin sealing and curing method. Reference numeral 1 denotes a substrate, 2 denotes a bare chip IC mounted on the substrate 1 by die bonding 3, and 4 denotes a liquid resin for sealing the bare chip IC 2, which is a liquid resin containing a thermosetting epoxy compound. Reference numeral 5 denotes a diffusion prevention cell for preventing the liquid resin 4 from flowing out. Reference numeral 6 denotes a wire connecting the bare chip IC 2 and the substrate 1 and is disposed inside the liquid resin 4.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の液体樹脂封止硬化方法では、基板1上にベアチップ
IC2を液体樹脂4にて封止するとワイヤ6の下部及び
基板1−ベアチップIC2間から気泡が発生し、図4に
示すように硬化した封止樹脂表面にピンホール7が発生
する問題点を有していた。However, in the above-described conventional liquid resin sealing and curing method, when the bare chip IC 2 is sealed on the substrate 1 with the liquid resin 4, air bubbles are generated from below the wire 6 and between the substrate 1 and the bare chip IC 2. This causes a problem that pinholes 7 occur on the surface of the cured sealing resin as shown in FIG.
【0004】また、硬化した封止樹脂の熱膨張及び収縮
によりワイヤ6の断線が発生する問題点を有していた。There is another problem that the wire 6 is broken due to thermal expansion and contraction of the cured sealing resin.
【0005】また、硬化した樹脂の熱膨張及び収縮によ
りベアチップIC2を実装した基板1に反りが発生する
問題点を有していた。There is another problem that the substrate 1 on which the bare chip IC 2 is mounted is warped due to thermal expansion and contraction of the cured resin.
【0006】この発明は、以上のような問題点を解決す
るためになされたもので、硬化した液体樹脂表面に起こ
るピンホールの発生及びワイヤー断線の発生を抑制する
ことができる液体樹脂封止硬化方法を得ることを目的と
する。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and is intended to prevent the occurrence of pinholes and the occurrence of wire breakage on the surface of a cured liquid resin. The aim is to get the method.
【0007】また、液体樹脂を硬化させる過程でのベア
チップICを実装した基板の反りを抑制することができ
る液体樹脂封止硬化方法を得ることを目的とする。It is another object of the present invention to provide a liquid resin sealing and curing method capable of suppressing a warp of a substrate on which a bare chip IC is mounted in a process of curing a liquid resin.
【0008】[0008]
【課題を解決するための手段】この発明に係る液体樹脂
封止硬化方法は、基板上に実装されたベアチップICを
熱硬化性エポキシ化合物を含有する液体樹脂にて封止硬
化させる液体樹脂封止硬化方法において、前記液体樹脂
が熱硬化する温度で保持する工程と、前記基板のガラス
転移温度を境目にした上下の温度で保持する工程とから
成る方法である。SUMMARY OF THE INVENTION A liquid resin according to the present invention is provided.
The sealing and curing method is a method of sealing and curing a bare chip IC mounted on a substrate with a liquid resin containing a thermosetting epoxy compound, wherein the liquid resin is held at a temperature at which the liquid resin is thermally cured. And a step of maintaining the glass transition temperature above and below the glass transition temperature of the substrate.
【0009】また、基板上に実装されたベアチップIC
を熱硬化性エポキシ化合物を含有する液体樹脂にて封止
硬化させる液体樹脂封止硬化方法において、前記液体樹
脂の粘度が急激に低下する温度で保持する工程と、前記
液体樹脂が熱硬化する温度で保持する工程と、前記基板
のガラス転移温度を境目にした上下の温度で保持する工
程とから成る方法である。A bare chip IC mounted on a substrate
In a liquid resin encapsulation curing method of sealing and curing with a liquid resin containing a thermosetting epoxy compound, a step of maintaining the temperature of the liquid resin at a temperature at which the viscosity sharply decreases, and a temperature at which the liquid resin is thermally cured. And holding at a temperature above and below the glass transition temperature of the substrate.
【0010】また、基板のガラス転移温度を境目にした
上下の温度で保持する工程を複数に分けて段階的に行う
方法である。[0010] In addition, there is a method in which the step of maintaining the substrate at a temperature above and below the glass transition temperature of the substrate is divided into a plurality of steps and performed stepwise.
【0011】また、基板上の複数個のベアチップICを
封止硬化させる方法である。Another method is to seal and harden a plurality of bare chip ICs on a substrate.
【0012】また、液体樹脂が熱硬化性エポキシノボラ
ック化合物を含む組成分を含有する方法である。Further, in the method, the liquid resin contains a component containing a thermosetting epoxy novolak compound.
【0013】また、ベアチップICと基板を結ぶワイヤ
が液体樹脂のフィラーリッチ層内部を通って配置された
方法である。[0013] Further, in this method, a wire connecting the bare chip IC and the substrate is disposed inside the filler-rich layer of the liquid resin.
【0014】[0014]
【発明の実施の形態】実施の形態1. 以下、この発明の実施の形態を図1及び図3により説明
する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
【0015】図1は、この発明の実施の形態1による液
体樹脂封止硬化方法における温度プロファイルを示す図
である。一般にエポキシ系液体樹脂は加熱されて温度が
上昇すると樹脂粘度が急激に低下する温度域がある。そ
の関係を図5に示す。図1に示すように、この樹脂粘度
が急激に低下する温度域である温度T1℃付近で液体封
止樹脂4に対する加熱温度を一定時間A1(min)保
持し、液体封止樹脂4の粘度を低下させることでワイヤ
6の下部及び基板1−ベアチップIC2間に存在してい
る気泡を液体封止樹脂4の表面が硬化する前に抜くこと
でき、硬化後の封止樹脂表面におこるピンホールの発生
を抑制することができる。FIG. 1 is a diagram showing a temperature profile in the liquid resin sealing and curing method according to the first embodiment of the present invention. Generally, there is a temperature range in which the viscosity of the epoxy-based liquid resin sharply decreases when the temperature is increased by heating. FIG. 5 shows the relationship. As shown in FIG. 1, the heating temperature for the liquid sealing resin 4 is maintained for a certain time A1 (min) around a temperature T1 ° C., which is a temperature range where the resin viscosity sharply decreases, and the viscosity of the liquid sealing resin 4 is reduced. By lowering, the air bubbles existing below the wire 6 and between the substrate 1 and the bare chip IC 2 can be removed before the surface of the liquid sealing resin 4 is hardened, and the pinholes generated on the hardened sealing resin surface can be removed. Generation can be suppressed.
【0016】また、硬化温度をT1℃付近で液体封止樹
脂4の粘度を低下させると、図6のように液体封止樹脂
中のエポキシ樹脂の基本組成であるフィラーが硬化剤よ
り比重が大きいため液体封止樹脂4内で境界線10に対
して下部にフィラーリッチ層9、上部に硬化剤リッチ層
8の2層に分離する。この分離によりワイヤ6周辺部に
はフィラーが多く充填されることになる。フィラーは一
般的に液体封止樹脂4の組成の中で熱膨張率が低いた
め、比重による分離によりワイヤ6周辺部にフィラーリ
ッチな状態で充填される結果になるため熱膨張及び収縮
によるワイヤ断線の発生をより抑制することができる。When the viscosity of the liquid sealing resin 4 is lowered at a curing temperature of about T1 ° C., as shown in FIG. 6, the filler, which is the basic composition of the epoxy resin in the liquid sealing resin, has a higher specific gravity than the curing agent. For this reason, the liquid sealing resin 4 is separated into two layers of a filler-rich layer 9 below the boundary line 10 and a hardener-rich layer 8 above the boundary line 10. Due to this separation, the periphery of the wire 6 is filled with a large amount of filler. Since the filler generally has a low coefficient of thermal expansion in the composition of the liquid sealing resin 4, the separation by the specific gravity results in a filler-rich state in the periphery of the wire 6. Can be further suppressed.
【0017】液体封止樹脂4の粘度を低下させた後、こ
の液体封止樹脂4の表面を硬化させるために、液体樹脂
の加熱硬化が本格的に起こる温度であるTE℃より低い
温度T2℃にて液体封止樹脂4に対する加熱温度を一定
時間A2(min)保持し、部分硬化させる。この後、
液体封止樹脂4の本格的な加熱硬化に必要な温度TE℃
まで段階的にステップ加熱を行う。これにより、上記液
体樹脂の粘度が急激に低下する温度で保持する工程によ
る処理にもかかわらず、封止樹脂中に残留している気泡
によって、ピンホールが発生することを防止することが
できる。After the viscosity of the liquid sealing resin 4 has been reduced, the surface of the liquid sealing resin 4 is hardened. Then, the heating temperature for the liquid sealing resin 4 is kept at A2 (min) for a certain period of time to perform partial curing. After this,
Temperature TE ° C required for full-scale heat curing of liquid sealing resin 4
Step heating is performed step by step until. Accordingly, it is possible to prevent the occurrence of pinholes due to bubbles remaining in the sealing resin despite the processing in the step of maintaining the liquid resin at a temperature at which the viscosity of the liquid resin sharply decreases.
【0018】また、TE℃で液体封止樹脂4に対する加
熱温度を一定時間A3(min)保持し、加熱硬化され
た液体封止樹脂4を常温まで冷却する過程で基板1のガ
ラス転移温度TG℃を境目にしてT3℃で一定時間A4
(min)のアニールを行った後、T4℃以降段階的に
一定時間A5(min)のアニール処理をすることで、
加熱硬化により発生した熱歪みが原因であるベアチップ
IC2を実装した基板1の反りを抑制することができ
る。Further, the heating temperature of the liquid sealing resin 4 is maintained at TE3 ° C. for a predetermined time A3 (min), and the glass transition temperature TG ° C. of the substrate 1 is obtained in the process of cooling the heat-cured liquid sealing resin 4 to normal temperature. A4 for a certain time at T3 ° C
(Min) annealing, and then annealing for a certain time A5 (min) stepwise after T4 ° C.
It is possible to suppress the warpage of the substrate 1 on which the bare chip IC 2 is mounted, which is caused by thermal distortion caused by heat curing.
【0019】基板1上の複数個のベアチップIC2を液
体樹脂13にて封止し加熱硬化させる場合でも実施例1
のようにステップキュア及びステップアニールを行えば
同等の効果が得られる。Embodiment 1 Even when a plurality of bare chip ICs 2 on a substrate 1 are sealed with a liquid resin 13 and cured by heating.
By performing the step cure and the step annealing as described above, the same effect can be obtained.
【0020】2種類以上の異なる樹脂を同一工程内にて
キュアを行う場合、それぞれの樹脂の粘度が低下する温
度にて同一工程内で各樹脂ごとに上記実施の形態1のよ
うにステップキュアさせることで同等の効果が得られ
る。例えば、エポキシ系樹脂とシリコン系樹脂とを同一
の対象物上に塗布したあと同一工程内にて硬化させる場
合などのことを示す。In the case where two or more different resins are cured in the same process, each resin is step-cured in the same process at a temperature at which the viscosity of each resin decreases as in the first embodiment. Thus, the same effect can be obtained. For example, it shows a case where an epoxy-based resin and a silicon-based resin are applied on the same object and then cured in the same process.
【0021】基板1上のベアチップIC2の周辺に基板
−ベアチップIC間の隙間を液体封止樹脂4にて封止す
る場合においても上記実施の形態1のようにステップキ
ュアさせることで同等の効果が得られる。Even when the gap between the substrate and the bare chip IC is sealed around the bare chip IC 2 on the substrate 1 with the liquid sealing resin 4, the same effect can be obtained by performing step curing as in the first embodiment. can get.
【0022】基板1上の複数個のベアチップIC2の周
辺に基板−ベアチップIC間の隙間を液体封止樹脂4に
て封止する場合においても上記実施の形態1のようにス
テップキュアさせることで同等の効果が得られる。ま
た、液体樹脂として、電気絶縁性、耐熱性及び、吸水性
に優れた熱硬化性エポキシノボラック化合物を含む組成
分を含有する樹脂を使用しても、上記実施の形態1のよ
うにステップキュアさせることで同等の効果が得られ
る。In the case where the gap between the substrate and the bare chip IC is sealed around the plurality of bare chip ICs 2 on the substrate 1 with the liquid sealing resin 4, the same effect can be obtained by performing step curing as in the first embodiment. The effect of is obtained. In addition, even if a resin containing a composition containing a thermosetting epoxy novolak compound having excellent electrical insulation, heat resistance, and water absorbency is used as the liquid resin, step curing is performed as in the first embodiment. Thus, the same effect can be obtained.
【0023】[0023]
【発明の効果】以上のように、この発明によれば、基板
上に実装されたベアチップICを熱硬化性エポキシ化合
物を含有する液体樹脂にて封止硬化させる液体樹脂封止
硬化方法において、液体樹脂が熱硬化する温度で保持す
る工程と、基板のガラス転移温度以下の温度で保持する
工程とから成ることにより、ベアチップICを実装した
基板の反りを抑制する効果がある。As described above, according to the present invention, there is provided a liquid resin sealing and curing method for sealing and curing a bare chip IC mounted on a substrate with a liquid resin containing a thermosetting epoxy compound. The step of holding the resin at a temperature at which the resin is thermally cured and the step of holding the resin at a temperature equal to or lower than the glass transition temperature of the substrate have an effect of suppressing the warpage of the substrate on which the bare chip IC is mounted.
【0024】また、基板上に実装されたベアチップIC
を熱硬化性エポキシ化合物を含有する液体樹脂にて封止
硬化させる液体樹脂封止硬化方法において、液体樹脂の
粘度が急激に低下する温度で保持する工程と、液体樹脂
が熱硬化する温度で保持する工程と、基板のガラス転移
温度を境目にした上下の温度で保持する工程とから成る
ことにより、封止樹脂表面におこるピンホールの発生を
抑制するとともに、ベアチップICを実装した基板の反
りを抑制する効果がある。A bare chip IC mounted on a substrate
Encapsulating and curing with a liquid resin containing a thermosetting epoxy compound, a step of maintaining the liquid resin at a temperature at which the viscosity of the liquid resin sharply decreases, and a step of maintaining the temperature at which the liquid resin is thermally cured And the step of holding at a temperature above and below the glass transition temperature of the substrate, thereby suppressing the occurrence of pinholes occurring on the sealing resin surface and reducing the warpage of the substrate on which the bare chip IC is mounted. It has the effect of suppressing.
【0025】また、基板のガラス転移温度を境目にした
上下の温度で保持する工程を複数に分けて段階的に行う
こと、つまり、TE℃〜TG℃間及びTG℃〜常温間を
複数の段階に分けて冷却することにより、ベアチップI
Cを実装した基板の反りをより一層、抑制する効果があ
る。Further, the step of maintaining the substrate at a temperature above and below the glass transition temperature of the substrate is divided into a plurality of steps and is performed stepwise, that is, between TE ° C and TG ° C and between TG ° C and room temperature in a plurality of steps. And then cooled, the bare chip I
This has the effect of further suppressing the warpage of the substrate on which C is mounted.
【0026】また、基板上の複数個のベアチップICを
封止硬化させることにより、封止樹脂表面におこるピン
ホールの発生や、ベアチップICを実装した基板の反り
の発生を起こすことなく、大型基板上の複数個のベアチ
ップICを一度に加熱硬化処理ができる。Further, by sealing and curing a plurality of bare chip ICs on the substrate, pinholes on the surface of the sealing resin and warping of the substrate on which the bare chip ICs are mounted are prevented from occurring. A plurality of bare chip ICs can be heat-cured at a time.
【0027】また、液体樹脂が熱硬化性エポキシノボラ
ック化合物を含む組成分を含有することにより、加熱硬
化処理後の樹脂の電気絶縁性、耐熱性及び、吸水性が改
良される効果がある。Further, when the liquid resin contains a composition containing a thermosetting epoxy novolak compound, the resin has an effect of improving electrical insulation, heat resistance and water absorption after heat curing.
【0028】また、ベアチップICと基板を結ぶワイヤ
が液体樹脂のフィラーリッチ層内部を通って配置された
ことにより、ワイヤー断線の発生を防止する効果があ
る。Further, since the wire connecting the bare chip IC and the substrate is disposed inside the filler rich layer of the liquid resin, there is an effect of preventing the occurrence of wire breakage.
【図1】 この発明の実施の形態1による液体樹脂封止
硬化方法における温度プロファイルを示す図である。FIG. 1 is a diagram showing a temperature profile in a liquid resin sealing and curing method according to Embodiment 1 of the present invention.
【図2】 従来の液体樹脂封止硬化方法における温度プ
ロファイルを示す図である。FIG. 2 is a diagram showing a temperature profile in a conventional liquid resin sealing and curing method.
【図3】 液体樹脂加熱硬化によりベアチップICを液
体樹脂にて封止した構成を示す説明図である。FIG. 3 is an explanatory diagram showing a configuration in which a bare chip IC is sealed with a liquid resin by liquid resin heating and curing.
【図4】 図3の拡大図である。FIG. 4 is an enlarged view of FIG. 3;
【図5】 液体封止樹脂の温度による粘度変化を示す図
である。5 is a diagram showing a viscosity change due to temperature of the liquid sealing resin.
【図6】 T1℃で一定時間中に液体樹脂が分離してい
ることを示す図である。FIG. 6 is a view showing that a liquid resin is separated at a time of T1 ° C. for a certain period of time.
1 基板、2 ベアチップIC、3 ダイボンド、4
液体封止樹脂、5 拡散防止セル、6 ワイヤー、7
ピンホール、8 硬化剤リッチ層、9 フィラーリッチ
層、10 境界線。1 substrate, 2 bare chip IC, 3 die bond, 4
Liquid sealing resin, 5 diffusion prevention cell, 6 wires, 7
Pinhole, 8 hardener rich layer, 9 filler rich layer, 10 boundary.
フロントページの続き (56)参考文献 特開 平1−297831(JP,A) 特開 平3−85736(JP,A) 特開 平4−111388(JP,A) 特開 平4−329110(JP,A) 特開 平5−335361(JP,A) 特開 平6−64016(JP,A) 実開 平5−57846(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 21/56 Continuation of front page (56) References JP-A-1-297831 (JP, A) JP-A-3-85736 (JP, A) JP-A-4-111388 (JP, A) JP-A-4-329110 (JP) JP-A-5-335361 (JP, A) JP-A-6-64016 (JP, A) JP-A-5-57846 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB (Name) H01L 21/56
Claims (6)
硬化性エポキシ化合物を含有する液体樹脂にて封止硬化
させる液体樹脂封止硬化方法において、前記液体樹脂が
熱硬化する温度で保持する工程と、前記基板のガラス転
移温度を境目にした上下の温度で保持する工程とから成
ることを特徴とする液体樹脂封止硬化方法。In a liquid resin sealing and curing method for sealing and curing a bare chip IC mounted on a substrate with a liquid resin containing a thermosetting epoxy compound, a step of holding the liquid resin at a temperature at which the liquid resin is thermally cured. And a step of maintaining the substrate at a temperature above and below the glass transition temperature of the substrate.
硬化性エポキシ化合物を含有する液体樹脂にて封止硬化
させる液体樹脂封止硬化方法において、前記液体樹脂の
粘度が急激に低下する温度で保持する工程と、前記液体
樹脂が熱硬化する温度で保持する工程と、前記基板のガ
ラス転移温度を境目にした上下の温度で保持する工程と
から成ることを特徴とする液体樹脂封止硬化方法。2. A liquid resin sealing and curing method for sealing and curing a bare chip IC mounted on a substrate with a liquid resin containing a thermosetting epoxy compound at a temperature at which the viscosity of the liquid resin sharply decreases. A liquid resin encapsulation and curing method, comprising: a step of holding, a step of holding at a temperature at which the liquid resin thermally hardens, and a step of holding at a temperature above and below a glass transition temperature of the substrate. .
の温度で保持する工程を複数に分けて段階的に行うこと
を特徴とする請求項1又は、請求項2に記載の液体樹脂
封止硬化方法。Wherein the step of holding at a temperature of up and down in which the glass transition temperature of the substrate at the boundary is divided into a plurality and performing stepwise claim 1 or a liquid resin sealing according to claim 2 Curing method.
硬化させることを特徴とする請求項1乃至請求項3のい
ずれかに記載の液体樹脂封止硬化方法。4. A liquid resin sealing curing method according to any one of claims 1 to 3 a plurality of bare chips IC on the board, characterized in that to seal cure.
化合物を含む組成分を含有することを特徴とする請求項
1乃至請求項3のいずれかに記載の液体樹脂封止硬化方
法。5. The liquid resin sealing curing method according to any one of claims 1 to 3 liquid resin is characterized by containing a composition component containing a thermosetting epoxy novolac compound.
体樹脂のフィラーリッチ層内部を通って配置されたこと
を特徴とする請求項2記載の液体樹脂封止硬化方法。6. The liquid resin sealing and curing method according to claim 2 , wherein a wire connecting the bare chip IC and the substrate is disposed inside the filler rich layer of the liquid resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11781896A JP3286891B2 (en) | 1996-05-13 | 1996-05-13 | Liquid resin sealing and curing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11781896A JP3286891B2 (en) | 1996-05-13 | 1996-05-13 | Liquid resin sealing and curing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09306933A JPH09306933A (en) | 1997-11-28 |
JP3286891B2 true JP3286891B2 (en) | 2002-05-27 |
Family
ID=14721024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11781896A Expired - Fee Related JP3286891B2 (en) | 1996-05-13 | 1996-05-13 | Liquid resin sealing and curing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3286891B2 (en) |
-
1996
- 1996-05-13 JP JP11781896A patent/JP3286891B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH09306933A (en) | 1997-11-28 |
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