JP3278697B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP3278697B2
JP3278697B2 JP33617993A JP33617993A JP3278697B2 JP 3278697 B2 JP3278697 B2 JP 3278697B2 JP 33617993 A JP33617993 A JP 33617993A JP 33617993 A JP33617993 A JP 33617993A JP 3278697 B2 JP3278697 B2 JP 3278697B2
Authority
JP
Japan
Prior art keywords
semiconductor device
heat
resin
screw
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33617993A
Other languages
Japanese (ja)
Other versions
JPH07202090A (en
Inventor
宣幸 沢崎
公昭 樽谷
満 小岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP33617993A priority Critical patent/JP3278697B2/en
Publication of JPH07202090A publication Critical patent/JPH07202090A/en
Application granted granted Critical
Publication of JP3278697B2 publication Critical patent/JP3278697B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】この発明は、絶縁熱伝導スペーサ
を介して、樹脂封止半導体デバイスを放熱板に取り付け
た半導体装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a resin-encapsulated semiconductor device is mounted on a heat sink via an insulating heat conductive spacer.

【0002】[0002]

【従来の技術】図6は、半導体装置を分解した分解図、
図7は半導体装置を組み立てる方法を示した組立図、
5、8は組立後の半導体装置の側面図および平面図であ
る。図において、1は半導体デバイスである樹脂射止半
導体デバイス、1a乃至1cはリード端子、1dはリー
ドフレームの一部で電力半導体がダイボンドされた1次
ヒートシンクで、金属部が樹脂で封止されることなく外
部に露出している。2は樹脂封止半導体デバイス1に発
生した熱を放熱する放熱部材である放熱板で、樹脂封止
半導体デバイス1を取り付ける取付面に後述する絶縁熱
伝導スペーサ3を位置決めするための打ち出し2a乃至
2eを有している。この打ち出し2a乃至2eは放熱板
2を裏面から叩くことにより得られる。3は樹脂封止半
導体デバイス1と放熱板2との間に設けられ、1次ヒー
トシンク1dから発生した熱を放熱板2に伝導するとと
もに1次ヒートシンク1dと放熱板2とを電気的に絶縁
する絶縁熱伝導部材である絶縁熱伝導スペーサである。
この絶縁熱伝導スペーサ3は厚さ0.3mm(一般的に
は、0.2〜0.8mm位)のシリコン系の樹脂で構成
されている。4は、樹脂封止半導体デバイス1と絶縁熱
伝導スペーサ3とを放熱板2に取り付けるねじ部材であ
るねじで、図7の矢印Aの方向に締め付けられる。この
ねじ4は、図7に示す如く樹脂封止半導体デバイス1に
設けられた取付穴1eと絶縁熱伝導スペーサ3に設けら
れた第1の開口3aとを貫通し、放熱板2に設けられた
ねじ穴2fと螺合する。
2. Description of the Related Art FIG. 6 is an exploded view of an exploded semiconductor device.
FIG. 7 is an assembly drawing and a view showing a method of assembling a semiconductor device .
5 and 8 are a side view and a plan view of the semiconductor device after assembly. In the figure, reference numeral 1 denotes a resin-shot semiconductor device which is a semiconductor device, 1a to 1c denote lead terminals, 1d denotes a primary heat sink to which a power semiconductor is die-bonded as a part of a lead frame, and a metal portion is sealed with resin. It is exposed to the outside without. Reference numeral 2 denotes a heat radiating plate which is a heat radiating member for radiating heat generated in the resin-encapsulated semiconductor device 1. have. The punches 2a to 2e are obtained by hitting the heat sink 2 from the back. Numeral 3 is provided between the resin-encapsulated semiconductor device 1 and the heat sink 2 to conduct heat generated from the primary heat sink 1d to the heat sink 2 and electrically insulate the primary heat sink 1d from the heat sink 2. It is an insulating heat conductive spacer which is an insulating heat conductive member.
The insulating heat conductive spacer 3 is made of a silicon-based resin having a thickness of 0.3 mm (generally, about 0.2 to 0.8 mm). Reference numeral 4 denotes a screw which is a screw member for attaching the resin-sealed semiconductor device 1 and the insulating heat conductive spacer 3 to the heat sink 2, and is tightened in the direction of arrow A in FIG. The screw 4 penetrates through the mounting hole 1 e provided in the resin-sealed semiconductor device 1 and the first opening 3 a provided in the insulating heat conductive spacer 3 as shown in FIG.
Screw with the screw hole 2f.

【0003】次に、組立手順について説明する。まず、
放熱板2に設けられた打ち出し2a乃至2eに沿って絶
縁熱伝導スペーサ3を載置する。ついで、1次ヒートシ
ンク1d側を絶縁熱伝導スペーサ3に向けて、取付穴1
eが第1の開口3aに一致するように樹脂封止半導体デ
バイス1を絶縁熱伝導スペーサ3の上に載置する。最後
にねじ4を図7に示す如く矢印Aの方向に締め付ける。
このようにして完成された半導体装置は図8、9に示し
た如き外観を有し、リード端子1a乃至1cを外部装置
と電気的に接続することにより動作する。
Next, an assembling procedure will be described. First,
The insulating heat conductive spacer 3 is placed along the protrusions 2 a to 2 e provided on the heat sink 2. Then, with the primary heat sink 1d side facing the insulating heat conductive spacer 3, the mounting hole 1
The resin-encapsulated semiconductor device 1 is mounted on the insulating heat-conducting spacer 3 such that e coincides with the first opening 3a. Finally, the screw 4 is tightened in the direction of arrow A as shown in FIG.
The semiconductor device completed in this manner has the appearance as shown in FIGS. 8 and 9, and operates by electrically connecting the lead terminals 1a to 1c to an external device.

【0004】以上のように構成された半導体装置は、例
えば誘導負荷のスイッチングなどに用いられる。ところ
で電力半導体は1次ヒートシンク1dにダイボンドされ
ている。従って、1次ヒートシンク1dには数百ボルト
の電位が発生する。また、前記電力半導体を動作させる
ことにより生じる熱は、1次ヒートシンク1dに蓄積さ
れる。そこで、従来の半導体装置は、樹脂封止半導体デ
バイス1と放熱板2との問に熱伝導性がよくしかも絶縁
性の優れた絶縁熱伝導スペーサ3を設けることにより安
定した動作を得るようにしていた。
The semiconductor device configured as described above is used, for example, for switching an inductive load. Incidentally, the power semiconductor is die-bonded to the primary heat sink 1d. Therefore, a potential of several hundred volts is generated in the primary heat sink 1d. Further, heat generated by operating the power semiconductor is accumulated in the primary heat sink 1d. Therefore, in the conventional semiconductor device, a stable operation is obtained by providing the insulating heat conductive spacer 3 having good thermal conductivity and excellent insulating property between the resin-sealed semiconductor device 1 and the heat sink 2. Was.

【0005】[0005]

【発明が解決しようとする課題】従来の半導体装置は以
上のように構成されているので、ねじ4を締め付ける
際、樹脂封止半導体デバイス1がねじ4の回転方向に応
力を受け、位置ずれすることがあった。この位置ずれが
生じると1次ヒートシンク1dと、放熱板2に設けられ
た打ち出し2a乃至2eとの距離が近くなってしまう。
1次ヒートシンク1dと放熱板2との間では上述した如
く数百ポルトの電位差が生じている。このため絶縁距離
が不足して樹脂封止半導体デバイス1を破壊してしまう
恐れがあった。また、樹脂封止半導体デバイス1が回転
することにより絶縁熱伝導スペーサ3が破れるなどの問
題点があった。
Since the conventional semiconductor device is configured as described above, when the screw 4 is tightened, the resin-encapsulated semiconductor device 1 receives a stress in the rotational direction of the screw 4 and is displaced. There was something. If this displacement occurs, the distance between the primary heat sink 1d and the protrusions 2a to 2e provided on the heat sink 2 becomes short.
As described above, a potential difference of several hundred volts is generated between the primary heat sink 1d and the heat sink 2. For this reason, there is a possibility that the insulation distance is insufficient and the resin-sealed semiconductor device 1 is broken. In addition, there has been a problem that the insulating heat conductive spacer 3 is broken when the resin-sealed semiconductor device 1 rotates.

【0006】この発明は、上述の問題点を解決するため
になされたもので、半導体デバイスをねじで取り付ける
際に位置ずれすることがなく、しかも半導体デバイス、
絶縁熱伝導部材および放熱部材を同時に位置決めできる
半導体装置を得ることを目的としている。
[0006] The present invention has been made to solve the above problems, there is no and this for positional displacement in mounting the semi-conductor device with a screw, moreover the semiconductor device,
Insulation heat conduction member and heat radiation member can be positioned simultaneously
It is intended to obtain a semiconductor device.

【0007】また、構成が簡単で、しかも高密度実装が
可能な半導体装置を得ることを目的としている。
Further, the structure is simple and high-density mounting is possible.
It is intended to obtain a possible semiconductor device.

【0008】また、間違った半導体デバイスを取り付け
ることがない半導体装置を得ることを目的としている。
In addition, mounting a wrong semiconductor device
It is intended to obtain a semiconductor device which does not have any problem.

【0009】[0009]

【課題を解決するための手段】[Means for Solving the Problems] この発明に係る半導体装Semiconductor device according to the present invention
置は、ねじ穴を有する放熱部材と、このねじ穴に対応すThe heat dissipating member with screw holes and the
る取付穴を有し放熱部材に載置される半導体デバイスDevice having a mounting hole to be mounted on a heat radiating member
と、ねじ穴に対応する第1の開口を有し放熱部材と半導A first opening corresponding to the screw hole,
体デバイスとの間に介装され半導体デバイスから発生しGenerated from a semiconductor device interposed between
た熱を放熱部材に伝導するとともに放熱部材と半導体デThe heat dissipated to the heat dissipating member and the heat dissipating member
バイスとを電気的Vise and electrical に絶縁する絶縁熱伝導部材と、半導体Heat-insulating member and semiconductor for insulation
デバイスが載置される範囲内に設けられ、放熱部材に設Provided within the area where the device is placed, and
けられた凸部と半導体デバイスに設けられた凹部とが係The projected protrusion and the recess provided in the semiconductor device are related.
合することにより放熱部材と半導体デバイスとの位置決The positioning of the heat dissipating member and the semiconductor device.
めを行う位置決め手段と、取付穴および第1の開口を貫Positioning means for performing the mounting, and through the mounting hole and the first opening.
通してねじ穴と螺合するねじ部材とを備え、絶縁熱伝導And a screw member that is screwed into the screw hole through
部材は直線形状の端部を有しその端部が放熱部材の凸部The member has a linear end, and the end is a convex portion of the heat radiating member.
に当接するとともに第1の開口、取付穴およびねじ穴をAbut the first opening, mounting holes and screw holes.
一致させることにより位置決めが為されるようにしたもPositioning is performed by matching
のである。It is.

【0010】 また、この発明に係る半導体装置は、半導
体デバイス毎に位置決め手段の設置位置を異ならせたも
のである。
Further , the semiconductor device according to the present invention is a semiconductor device.
The position of the positioning means is different for each body device
It is.

【0011】[0011]

【作用】上記のように構成された半導体装置において
は、位置決め手段により半導体デバイスが放熱部材に位
置決めされ 半導体デバイス、絶縁熱伝導部材および放
熱部材を同時に位置決めする。
In the semiconductor device configured as described above, the semiconductor device is positioned on the heat radiating member by the positioning means.
-Decided-fitted, semiconductor devices, insulating heat conducting member and release
The heating members are positioned simultaneously.

【0012】 また、位置決め手段は半導体デバイス毎に
設置位置が異なっているので、予め決められた半導体デ
バイス以外は取り付けられない。
Further , since the positioning position of the positioning means is different for each semiconductor device, only the predetermined semiconductor device can be attached.

【0013】[0013]

【実施例】実施例1. 以下、この発明の実施例について説明する。図1は実施
例1に係る樹脂封止半導体デバイス1の背面図、図2は
実施例1に係る放熱板2に絶縁熱伝導スペーサ3を載置
した平面図、図3は実施例1に係る半導体装置の平面
図、図4は実施例1に係る半導体装置の側面図である。
図において、従来の半導体装置と同一符号のものは、従
来と同一あるいは相当部分を表す。
[Embodiment 1] Hereinafter, embodiments of the present invention will be described. FIG. 1 is a rear view of a resin-sealed semiconductor device 1 according to the first embodiment, FIG. 2 is a plan view in which an insulating heat conductive spacer 3 is mounted on a heat sink 2 according to the first embodiment, and FIG. FIG. 4 is a plan view of the semiconductor device, and FIG. 4 is a side view of the semiconductor device according to the first embodiment.
In the drawings, the same reference numerals as those of the conventional semiconductor device indicate the same or corresponding parts as those of the conventional semiconductor device.

【0014】 実施例1においては、放熱板2に設けられ
た凸部である打ち出し2g、2h、および取付時にこの
打ち出し2g、2hに係合あるいは嵌合するよう樹脂封
止半導体デバイス1の背面に設けられた凹部1f、1g
が新たに備えられている。この、打ち出し2g、2hお
よび凹部1f、1gは位置決め手段を構成している。ま
た、取付穴1e、第1の開口3aおよぴねじ穴2fは、
絶縁熱伝導スペーサ3を打ち出し2a乃至2eに沿って
載置し、更に打ち出し2g、2hと凹部1f、1gとが
係合あるいは嵌合するように樹脂封止半導体デバイス1
を載置した際に一致するよう構成されている。
In the first embodiment, the projections 2g and 2h, which are convex portions provided on the heat sink 2, and the rear surface of the resin-sealed semiconductor device 1 is engaged with or fitted to the projections 2g and 2h at the time of mounting. Provided recesses 1f, 1g
Is newly provided. The stamps 2g, 2h and the recesses 1f, 1g constitute positioning means. The mounting hole 1e, the first opening 3a and the screw hole 2f are
The insulating heat conductive spacer 3 is placed along the stamps 2a to 2e, and the resin-sealed semiconductor device 1 is further arranged so that the stamps 2g, 2h and the recesses 1f, 1g are engaged or fitted.
Are arranged so as to coincide with each other.

【0015】 次に、実施例1の半導体装置の組み立て方
について説明する。まず、図2に示すように打ち出し2
a乃至2eに沿って絶縁熱伝導スペーサ3を載置する。
次に、樹脂封止半導体デバイス1の背面に設けられた凹
部1f、1gが放熱板2に設けられた打ち出し2g、2
hに係合あるいは嵌合するよう樹脂封止半導体デバイス
1を載置する。ねじ4は、樹脂封止半導体デバイス1の
取付穴1eおよび絶縁熱伝導スペーサ3の第1の開口3
aを貫通し放熱板2のねじ穴2fに螺合される。
[0015] Next, a description is given of a method of assembling the semiconductor device of the first embodiment. First, as shown in FIG.
The insulating heat conductive spacer 3 is placed along a to 2e.
Next, the recesses 1 f and 1 g provided on the back surface of the resin-encapsulated semiconductor device 1 are formed by embossing 2 g and 2
h, the resin-encapsulated semiconductor device 1 is mounted. The screw 4 is attached to the mounting hole 1 e of the resin-sealed semiconductor device 1 and the first opening 3 of the insulating heat conductive spacer 3.
a and is screwed into the screw hole 2 f of the heat sink 2.

【0016】 このとき、樹脂封止半導体デバイス1にね
じ4の回転方向の応力がかかったとしても、樹脂封止半
導体デバイス1は凹部1f、1gおよび打ち出し2g、
2fにより位置決めがなされておりずれたりすることが
ない。従って、樹脂封止半導体デバイス1を放熱板2に
精度よく位置決め固定することができる。
At this time, even if a stress in the rotational direction of the screw 4 is applied to the resin-encapsulated semiconductor device 1, the resin-encapsulated semiconductor device 1 still has the recesses 1f, 1g and the projections 2g,
Positioning is performed by 2f and there is no displacement. Therefore, the resin-sealed semiconductor device 1 can be accurately positioned and fixed to the heat sink 2.

【0017】 実施例. 上記実施例において、位置決め手段の設置位置を、取り
付ける樹脂封止半導体デバイスによってその設置位置を
異ならせてもよい。これにより誤った樹脂封止半導体デ
バイスの取り付けを防止することができる。設置位置を
異ならせるものとして、例えば、打ち出し2gと2hと
の間隔を異ならせる等が挙げられる。なお、言うまでも
ないが、打ち出しの設置位置を変えた場合には、これに
対応する凹部の設置位置も変更する。
Embodiment 2 FIG . In the above embodiment, the position of the positioning means may be different depending on the resin-sealed semiconductor device to be mounted. This can prevent incorrect mounting of the resin-sealed semiconductor device. Examples of different installation positions include different intervals between the launches 2g and 2h. Needless to say, in the case of changing the installation position of the launch it is also changing the installation position of the recessed portions corresponding thereto.

【0018】 実施例. 上記実施例では、打ち出し、凹部を2組設けているが、
これらは1組でもよい。即ち、上記実施例1において
は、樹脂封止半導体デバイス1は、ねじ4と打ち出し2
gと凹部1g、あるいはねじ4と打ち出し2hと凹部1
fの2点で位置決めされるので位置ずれすることがな
い。
Embodiment 3 FIG . In the above embodiment, launch, is provided with the concave portion 2 sets,
These may be one set. That is, in the first embodiment, the resin-encapsulated semiconductor device 1 includes the screw 4
g and recess 1g, or screw 4 and punch 2h and recess 1
Positioning is performed at two points of f, so there is no displacement.
No.

【0019】[0019]

【発明の効果】この発明は、以上説明したように構成さ
れているので、以下に示すような効果を奏する。
Since the present invention is configured as described above, it has the following effects.

【0020】 半導体デバイスをねじで取り付ける際に位
置ずれすることがなく、しかも半導体デバイス、絶縁熱
伝導部材および放熱部材を同時に位置決めできる半導体
装置を得ることができる。 また、構成が簡単で、しかも
高密度実装が可能である。
A semiconductor that does not shift when a semiconductor device is mounted with screws, and that can simultaneously position a semiconductor device, an insulating heat conducting member, and a heat radiating member.
A device can be obtained. In addition, the configuration is simple, and
High-density mounting is possible.

【0021】 位置決め手段の設置位置を半導体デバイス
毎に異ならせたので、半導体デバイスをねじで取り付け
る際に位置ずれすることがなく、しかも間違った半導体
デバイスを取り付けることない。
[0021] Since with different installation positions of the positioning means for each semiconductor device, without misalignment when mounting the semiconductor device on the screw, yet is not possible to attach the wrong semiconductor device.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 この発明の実施例1に係る樹脂封止半導体デ
バイスの背面図である。
FIG. 1 is a rear view of a resin-encapsulated semiconductor device according to Embodiment 1 of the present invention.

【図2】 この発明の実施例1に係る放熱板に絶縁熱伝
導スペーサを載置した平面図である。
FIG. 2 is a plan view in which an insulating heat conductive spacer is mounted on a heat sink according to the first embodiment of the present invention.

【図3】 この発明の実施例1に係る半導体装置の平面
図である。
FIG. 3 is a plan view of the semiconductor device according to the first embodiment of the present invention.

【図4】 この発明の実施例1に係る半導体装置の側面
図である。
FIG. 4 is a side view of the semiconductor device according to the first embodiment of the present invention.

【図5】 従来の半導体装置の側面図である。 FIG. 5 is a side view of a conventional semiconductor device.

【図6】 従来の半導体装置の分解図である。FIG. 6 is an exploded view of a conventional semiconductor device.

【図7】 一般的な半導体装置の組立図である。FIG. 7 is an assembly view of a general semiconductor device.

【図8】 従来の半導体装置の平面図である FIG. 8 is a plan view of a conventional semiconductor device .

【符号の説明】[Explanation of symbols]

1 樹脂封止半導体デバイス 1a乃至1c リード端子 1d 1次ヒートシンク 1e 取付穴 1f、1g 凹部 1j、1k 凹部 2 放熱板 2a乃至2e 打ち出し 2f ねじ穴 2g、2h 打ち出し 3 絶縁熱伝導スペーサ 3a 第1の開口 4 ね REFERENCE SIGNS LIST 1 resin-encapsulated semiconductor device 1 a to 1 c lead terminal 1 d primary heat sink 1 e mounting hole 1 f, 1 g recess 1 j, 1 k recess 2 heat sink 2 a to 2 e punch 2 f screw hole 2 g, 2 h punch 3 insulating heat conductive spacer 3 a first opening 4 root Ji

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小岩 満 姫路市千代田町840番地 三菱電機株式 会社 姫路製作所内 (56)参考文献 実開 昭52−116157(JP,U) 実開 昭55−25379(JP,U) ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor: Mitsuru Koiwa 840 Chiyoda-cho, Himeji City Mitsubishi Electric Corporation Himeji Works (56) References JP, U)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ねじ穴を有する放熱部材と、このねじ穴
に対応する取付穴を有し前記放熱部材に載置される半導
体デバイスと、前記ねじ穴に対応する第1の開口を有し
前記放熱部材と前記半導体デバイスとの間に介装され前
記半導体デバイスから発生した熱を前記放熱部材に伝導
するとともに前記放熱部材と前記半導体デバイスとを電
気的に絶縁する絶縁熱伝導部材と、前記半導体デバイス
が載置される範囲内に設けられ、前記放熱部材に設けら
れた凸部と前記半導体デバイスに設けられた凹部とが係
合することにより前記放熱部材と前記半導体デバイスと
の位置決めを行う位置決め手段と、前記取付穴および前
記第1の開口を貫通して前記ねじ穴と螺合するねじ部材
とを備え、前記絶縁熱伝導部材は直線形状の端部を有し
その端部が前記放熱部材の凸部に当接するとともに前記
第1の開口、前記取付穴および前記ねじ穴を一致させる
ことにより位置決めが為されることを特徴とする半導体
装置。
1. A heat radiating member having a screw hole , a semiconductor device having a mounting hole corresponding to the screw hole , mounted on the heat radiating member, and a first opening corresponding to the screw hole. An insulating heat conducting member interposed between the heat dissipating member and the semiconductor device to conduct heat generated from the semiconductor device to the heat dissipating member and electrically insulate the heat dissipating member from the semiconductor device And the semiconductor device
Is provided within a range in which the heat radiation member is mounted .
Between the convex portion formed and the concave portion provided in the semiconductor device.
Comprising a positioning means for positioning said and said heat radiating member semiconductor device by coupling, and a screw member extending through the mounting hole and the first opening is engaged with the screw hole, the insulating heat conducting The member has a straight end
The end of the heat dissipating member contacts the convex portion of the heat dissipating member.
Match the first opening, the mounting hole and the screw hole
A semiconductor device characterized in that positioning is performed by the following .
【請求項2】 位置決め手段は、半導体デバイス毎にそ
の設置位置を異ならせたことを特徴とする請求項1記載
半導体装置。
2. The positioning device according to claim 1 , wherein the positioning means is provided for each semiconductor device.
2. The installation position of the device is changed.
Semiconductor device.
JP33617993A 1993-12-28 1993-12-28 Semiconductor device Expired - Lifetime JP3278697B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33617993A JP3278697B2 (en) 1993-12-28 1993-12-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33617993A JP3278697B2 (en) 1993-12-28 1993-12-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH07202090A JPH07202090A (en) 1995-08-04
JP3278697B2 true JP3278697B2 (en) 2002-04-30

Family

ID=18296478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33617993A Expired - Lifetime JP3278697B2 (en) 1993-12-28 1993-12-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JP3278697B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4611845B2 (en) * 2005-08-29 2011-01-12 アスモ株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPH07202090A (en) 1995-08-04

Similar Documents

Publication Publication Date Title
JP4377919B2 (en) Electrical junction box
KR101099242B1 (en) Electronic control apparatus
JP2001156219A (en) Semiconductor device
US5019942A (en) Insulating apparatus for electronic device assemblies
US6657866B2 (en) Electronics assembly with improved heatsink configuration
JPH11329616A (en) Connector and connection structure using connector
JP2002198477A (en) Semiconductor device
JP2014179376A (en) Semiconductor device and manufacturing method of the same
JPH09283886A (en) Substrate mounting method, mounting substrate structure and electronic apparatus using mounting substrate structure
JP2000133897A (en) Resin-forming substrate
JP3278697B2 (en) Semiconductor device
JPH10189843A (en) Electronic component presser metal fitting
JP2002353385A (en) Servo drive device
JPH08227952A (en) Power module
JPH09213852A (en) Heat dissipating structure of heating electronic component
JP2925475B2 (en) Heat dissipation structure of electronic device
JP3194466B2 (en) Mounting structure of PTC element to electrical junction box
JP4419183B2 (en) Electronic equipment with heat sink
JP4507269B2 (en) Terminal structure of electronic equipment
JP2003133681A (en) Fixture of semiconductor device and fixing structure thereof
JP2002076259A (en) Power module
JP2546304Y2 (en) Device for fixing semiconductor elements
JP2583961Y2 (en) Switch pole board connection structure
JPH0220840Y2 (en)
JPH01135054A (en) Semiconductor device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080222

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090222

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100222

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100222

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110222

Year of fee payment: 9

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120222

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130222

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130222

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140222

Year of fee payment: 12

EXPY Cancellation because of completion of term