JPH01135054A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01135054A JPH01135054A JP29377787A JP29377787A JPH01135054A JP H01135054 A JPH01135054 A JP H01135054A JP 29377787 A JP29377787 A JP 29377787A JP 29377787 A JP29377787 A JP 29377787A JP H01135054 A JPH01135054 A JP H01135054A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- radiation fin
- metal substrate
- protrusions
- recesses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000005855 radiation Effects 0.000 claims abstract description 18
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000009434 installation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は絶縁形パワーモジュール、飼えばパワートラン
ジスタモジュールなどの半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor devices such as insulated power modules and power transistor modules.
この種の半導体装置の一例の側面図を第3図に示す。第
3図において、半導体装置1は半導体片やその他の電気
部品が電気的に絶縁された状態。A side view of an example of this type of semiconductor device is shown in FIG. In FIG. 3, the semiconductor device 1 is in a state in which semiconductor chips and other electrical components are electrically insulated.
例えば絶縁板を介して固着された(これらは図示されて
はいない)金属基板2に樹脂成型ケース3が接合されて
なり、取り付は穴4によって金属基板2の外面が放熱フ
ィンに接触するようにねじを用いて取り付けられ使用さ
れる。For example, a resin molded case 3 is bonded to a metal substrate 2 that is fixed via an insulating plate (these are not shown), and the mounting is done so that the outer surface of the metal substrate 2 contacts the heat dissipation fins through holes 4. It is attached and used using screws.
上述のような従来の半導体装置においては、半導体装置
に放熱フィンへねじで取り付けるための取り付は部6を
設けておくことが必要であり、その分半導体装置が大型
となり、実装面積も大きくなる。また、取り付けに必要
な部品数もねじ、ばね座金、平座金と多く、取り付は工
数も多いという欠点があった。In the conventional semiconductor device as described above, it is necessary to provide a mounting portion 6 for attaching the semiconductor device to the heat dissipation fin with screws, which increases the size of the semiconductor device and the mounting area. . In addition, the number of parts required for installation is large, including screws, spring washers, and flat washers, and the installation requires a large number of man-hours.
本発明は、上述の欠点を除去して、放熱フィンへの取り
付は部をなくして小形化され、しかも放熱フィンへねじ
などの部品を用いることなく容易に取り付けることので
きる半導体装置を提供することを目的とする。The present invention eliminates the above-mentioned drawbacks, and provides a semiconductor device that can be miniaturized by eliminating parts for attachment to a heat dissipation fin, and that can be easily attached to the heat dissipation fin without using parts such as screws. The purpose is to
上記の目的を達成するために、本発明によれば、平板状
金属基板の一主面に半導体片が絶縁されて固着されて成
り、他の主面に放熱フィンが取り付けられる半導体装置
において、前記金属基板の他の主面に放熱フィンの凹部
に係合する突出部が形成されている半導体装置とする。In order to achieve the above object, the present invention provides a semiconductor device in which a semiconductor piece is insulated and fixed to one main surface of a flat metal substrate, and a radiation fin is attached to the other main surface. A semiconductor device is provided in which a protrusion that engages with a recess of a radiation fin is formed on the other main surface of a metal substrate.
上述のように半導体装置の放熱フィンに接触させるべき
金属基板面に形成されている突出部を、これに対応して
形成されている放熱フィンの凹部に係合させることによ
り、半導体装置をねじなど別個の部品を用いることなし
に放熱フィンに強固に熱伝導性良く密着して装着するこ
とができる。As described above, by engaging the protrusion formed on the surface of the metal substrate that is to be brought into contact with the heat dissipation fin of the semiconductor device into the corresponding recess of the heat dissipation fin, the semiconductor device can be attached to a screw, etc. It can be firmly and closely attached to the radiation fin with good thermal conductivity without using separate parts.
第1図は本発明の一実施例の半導体装置の側面図を示し
、従来例の第3図と共通な部分には同一番号を付しであ
る。第1図において、半導体装置1は絶縁板を介して半
導体片、電極板その他の電気部品(これらは図示されて
いない)の固着された金属基板2にこれら固着品を内蔵
するように樹脂成型ケースが接合されてなり、ケース上
面には外部導出端子5が導出されている。金属基板2の
下面には断面が台形で紙面に垂直な方向にうね状に二本
、本発明による突出部7が形成されている。FIG. 1 shows a side view of a semiconductor device according to an embodiment of the present invention, and parts common to those of the conventional example shown in FIG. 3 are given the same numbers. In FIG. 1, a semiconductor device 1 is a metal substrate 2 on which semiconductor pieces, electrode plates, and other electrical parts (not shown) are fixed via an insulating plate, and a resin molded case is constructed to house these fixed parts. are joined together, and an external lead-out terminal 5 is led out from the upper surface of the case. Two protrusions 7 according to the present invention are formed on the lower surface of the metal substrate 2 in a trapezoidal cross section and in the form of ridges in a direction perpendicular to the plane of the paper.
第2図は第1図に示した半導体装置の装着される放熱フ
ィンの要部側面図であって、放熱フィン8の半導体装置
1の金属基板2が固着される面には金属基板2に形成さ
れている突出部7が係合するように同一形状の溝状の凹
部9が形成されている。FIG. 2 is a side view of a main part of the radiation fin to which the semiconductor device shown in FIG. A groove-shaped recess 9 having the same shape is formed so that the protrusion 7 that is formed in the recess 9 is engaged with the protrusion 7 .
このような放熱フィンの側方からスライドさせて半導体
装置1の金属基板2の突出部7を放熱フィン8の凹部9
に係合させることにより、ねじなどの別個の部品を用い
ることなしに容易に半導体装置を放熱フィンに強固に熱
伝導の良好な状態に装着することができる。また、この
場合には第3図−に示した取り付は穴4はもちろん、取
り付は部6も必要でなくなるので第1図に見られるよう
に半導体装置1はその分だけ小形となる。The protrusion 7 of the metal substrate 2 of the semiconductor device 1 is slid from the side of the heat dissipation fin 8 into the recess 9 of the heat dissipation fin 8.
By engaging with the semiconductor device, the semiconductor device can be easily attached to the radiation fin firmly and in a state with good heat conduction without using separate parts such as screws. Furthermore, in this case, not only the mounting hole 4 shown in FIG. 3 but also the mounting portion 6 are not required, so that the semiconductor device 1 is made smaller accordingly, as seen in FIG. 1.
本発明における金属基板の突出部の形状1個数など、従
ってそれに対応して形成される放熱フィン表面の凹部の
形状1個数などは、本実施例のものに限られるものでな
いことは言うまでもない。It goes without saying that the shape and number of the protrusions on the metal substrate in the present invention, and therefore the number and shape of the recesses on the surface of the radiation fins formed correspondingly, are not limited to those of this embodiment.
本発明によれば、半導体装置の金属基板の放熱フィンに
接触する面に突出部を形成しておき、この金属基板の突
出部により半導体装置を放熱フィンに強固に熱伝導性良
く装着する。かくして、従来のように絶縁形パワーモジ
ュールなどの半導体装置に放熱板への取り付は用穴を備
えた取り付は部を別途形成することは不必要となり半導
体装置が小形となる。また、取り付けのためのねじなど
の部品も必要でなくなり、金属基板の突出部を放熱フィ
ン表面の凹部に係合させることにより容易に少ない工数
で半導体装置を放熱フィンに装着できることになる。According to the present invention, a protrusion is formed on the surface of the metal substrate of the semiconductor device that comes into contact with the heat dissipation fin, and the semiconductor device is firmly attached to the heat dissipation fin with good thermal conductivity using the protrusion of the metal substrate. In this way, it is unnecessary to separately form a mounting section with holes for mounting a heat sink on a semiconductor device such as an insulated power module as in the past, and the semiconductor device can be made smaller. Furthermore, parts such as screws for attachment are no longer required, and by engaging the protrusion of the metal substrate with the recess on the surface of the radiation fin, the semiconductor device can be easily attached to the radiation fin with less man-hours.
第1図は本発明の一実施例の半導体装置の側面図、第2
図は第1図の半導体装置が装着される放熱フィンの要部
側面図、第3図は従来例の半導体装置の側面図である。
1 半導体素子、2 金属基板、7 突出部。
第 2 図FIG. 1 is a side view of a semiconductor device according to an embodiment of the present invention, and FIG.
The figure is a side view of a main part of a radiation fin to which the semiconductor device of FIG. 1 is attached, and FIG. 3 is a side view of a conventional semiconductor device. 1 semiconductor element, 2 metal substrate, 7 protrusion. Figure 2
Claims (1)
固着されて成り、他の主面に放熱フィンが取り付けられ
る半導体装置において、前記金属基板の他の主面に放熱
フィンの凹部に係合する突出部が形成されていることを
特徴とする半導体装置。(1) In a semiconductor device in which a semiconductor piece is insulated and fixed to one principal surface of a flat metal substrate, and a radiation fin is attached to the other principal surface, a recess of the radiation fin is provided on the other principal surface of the metal substrate. A semiconductor device characterized in that a protrusion is formed to engage with the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29377787A JPH01135054A (en) | 1987-11-20 | 1987-11-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29377787A JPH01135054A (en) | 1987-11-20 | 1987-11-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01135054A true JPH01135054A (en) | 1989-05-26 |
Family
ID=17799051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29377787A Pending JPH01135054A (en) | 1987-11-20 | 1987-11-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01135054A (en) |
-
1987
- 1987-11-20 JP JP29377787A patent/JPH01135054A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8975740B2 (en) | Semiconductor module | |
KR101477378B1 (en) | Housing and power module having the same | |
KR101444550B1 (en) | Semiconductor module | |
JP3540471B2 (en) | Semiconductor module | |
KR20020093999A (en) | An electronic control modul for a vehicle | |
JP4643703B2 (en) | Semiconductor device fixture and mounting structure thereof | |
JP2002198477A (en) | Semiconductor device | |
JP4329961B2 (en) | Composite semiconductor device | |
JPH01135054A (en) | Semiconductor device | |
KR20030063178A (en) | Electrical device | |
JPH10229149A (en) | Semiconductor device | |
JPH09213852A (en) | Heat dissipating structure of heating electronic component | |
JPS6228768Y2 (en) | ||
JP2000299419A (en) | Semiconductor device | |
JPH0325414Y2 (en) | ||
JP2002076259A (en) | Power module | |
JP3278697B2 (en) | Semiconductor device | |
JPH039335Y2 (en) | ||
JPH0449782B2 (en) | ||
WO2014023030A1 (en) | Electronic device | |
JP2563680Y2 (en) | Power unit | |
JPH11307302A (en) | Non-thermal conducting resistor for servo amplifier and the servo amplifier equipped with the resistor | |
JPH0729873U (en) | Heat dissipation structure for electronic components | |
KR102333646B1 (en) | Power module | |
JP3508521B2 (en) | Power module terminal connector and terminal connection method |