JP3254734B2 - Manufacturing method of ferroelectric element - Google Patents
Manufacturing method of ferroelectric elementInfo
- Publication number
- JP3254734B2 JP3254734B2 JP15645792A JP15645792A JP3254734B2 JP 3254734 B2 JP3254734 B2 JP 3254734B2 JP 15645792 A JP15645792 A JP 15645792A JP 15645792 A JP15645792 A JP 15645792A JP 3254734 B2 JP3254734 B2 JP 3254734B2
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- annealing
- deterioration
- manufacturing
- ferroelectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は強誘電体のアニール処理
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferroelectric annealing method.
【０００２】[0002]
【従来の技術】従来、強誘電体は強誘電体結晶育成後、
または強誘電体膜形成後は、酸素雰囲気のみにてアニー
ルするのが通例であった。2. Description of the Related Art Conventionally, ferroelectrics are grown after ferroelectric crystal growth.
Or, after the formation of the ferroelectric film, annealing is usually performed only in an oxygen atmosphere.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来技術
では強誘電体の素子特性の劣化や寿命の劣化を充分に防
止する迄には到らないと云う課題があった。However, there is a problem that the above prior art does not sufficiently prevent the deterioration of the device characteristics and the life of the ferroelectric.
【０００４】本発明はかかる従来技術の課題を解決し、
特性劣化や寿命劣化の無い強誘電体素子を提供する事を
目的とする。[0004] The present invention solves the problems of the prior art,
An object of the present invention is to provide a ferroelectric element free from characteristic deterioration and life deterioration.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成するために、本発明の強誘電体素子の製造方
法は、基板上に下部電極を形成する工程と、前記下部電
極上に強誘電体膜を成膜する工程と、酸素雰囲気中で前
記強誘電体膜をアニールし結晶化する工程と、不活性雰
囲気中にて前記強誘電体膜をアニールする工程と、前記
結晶化された強誘電体膜上に上部電極を形成する工程と
を備えたことを特徴とする。In order to solve the above problems and to achieve the above object, a method of manufacturing a ferroelectric element according to the present invention comprises a step of forming a lower electrode on a substrate; A ferroelectric film on the substrate and before
Annealing and crystallizing the ferroelectric film;
A step of annealing the ferroelectric film in an atmosphere ; and a step of forming an upper electrode on the crystallized ferroelectric film.
【０００６】[0006]
【作用】強誘電体素子の劣化の原因にはナトリュウム・
イオンの電界による移動説および酸素空乏生成説等があ
るが、いずれも確証はなく、むしろ強誘電体に含有され
た水素が電界により移動し、空間電荷を生成する作用が
ある為であり、この事は、強誘電体を水素アニールする
と特性劣化が激しくなるところから、証明できる訳であ
り、不活性雰囲気中でのアニール処理は、強誘電体に含
有されている水素を放出する作用があり、為に強誘電体
素子の特性劣化や寿命劣化を防止する作用がある。[Function] The cause of deterioration of ferroelectric element is sodium
There is a theory of movement of ions by an electric field and a theory of generation of oxygen depletion, but none of them has been confirmed, but rather, hydrogen contained in a ferroelectric has an effect of moving by an electric field to generate a space charge. The fact can be proved from the fact that the property deterioration becomes severe when the ferroelectric is annealed with hydrogen, and annealing in an inert atmosphere has the effect of releasing hydrogen contained in the ferroelectric, Therefore, it has an effect of preventing the characteristic deterioration and the life deterioration of the ferroelectric element.
【０００７】[0007]
【実施例】以下、実施例により本発明を詳述する。The present invention will be described below in detail with reference to examples.
【０００８】いま、チタン酸ジルコン酸鉛（以下ＰＺ
Ｔ）を強誘電体の一例として、述べると、白金、白金ー
パラジュウム、白金ーロジュウムあるいはルテニュウム
ー珪素等から成る電極に挟まれたＰＺＴ素子による記憶
素子を製作する場合、ＰＺＴの単結晶体や多結晶体の板
状表面に前記電極を形成するか、基板上に下部電極を蒸
着・ホト・エッチング後ＰＺＴを３０００オングストロ
ーム厚程度以下にアルゴン雰囲気中でスパッタ蒸着しア
モルファスＰＺＴ膜とし、該ＰＺＴ膜をホト・エッチン
グ後に酸素雰囲気中にて７５０度で３０分のアニール処
理して多結晶ＰＺＴ膜とした後、上部電極を蒸着・ホト
・エッチング処理で形成する訳であるが、この酸素アニ
ールはＰＺＴ中の酸素空乏を埋め、ストイッキオメトリ
ーを得て、電気的特性を一定のレベルに安定化させるの
には役立ってはいるが、充分では無く、酸素空乏が無い
にもかかわらず、記憶素子として動作させると１０9回
の書き込み・消去のサイクルで劣化する。この劣化の原
因は、記憶素子への電圧の印加による酸素空乏の生成と
言われていたが、酸素空乏の無い初期状態から電圧印加
により空間電荷の増大は認められるが、必ずしも酸素空
乏の増加は認められず、電気的特性の変動は、アルゴ
ン、ヘリュウム、窒素等の不活性ガス雰囲気や真空中等
の不活性雰囲気中で５００度以上で３０分程度以上のア
ニールを施すと、水素ガスの脱ガスが認められ、電気的
特性も記憶素子として１０15回以上の書き込み・消去も
可能となる。これは、ＰＺＴ膜に限らず、予め酸素空乏
の無い板状のＰＺＴ単結晶体や多結晶体を不活性雰囲気
中でアニールした場合でも同様である。Now, lead zirconate titanate (hereinafter referred to as PZ)
T) is an example of a ferroelectric substance. To manufacture a storage element using a PZT element sandwiched between electrodes made of platinum, platinum-palladium, platinum-rhodium, ruthenium-silicon, etc., a PZT single crystal or polycrystal is used. The above-mentioned electrode is formed on the plate-like surface or the lower electrode is deposited on the substrate, photo-etched, and then PZT is sputter-deposited in an argon atmosphere to a thickness of about 3,000 Å or less to form an amorphous PZT film. After the etching, annealing is performed in an oxygen atmosphere at 750 degrees for 30 minutes to form a polycrystalline PZT film, and then the upper electrode is formed by vapor deposition, photo etching, and the like. It does not help fill depletion, obtain stoichiometry, and stabilize electrical properties to a certain level But it is sufficient without despite oxygen depletion is not degrade at the operating as a memory element 10 nine write-erase cycles. The cause of this deterioration was said to be the generation of oxygen depletion due to the application of a voltage to the storage element. No change in the electrical characteristics was observed when hydrogen gas was degassed by annealing at 500 degrees or more for about 30 minutes or more in an inert gas atmosphere such as argon, helium, or nitrogen, or in an inert atmosphere such as a vacuum. And the electrical characteristics of the memory element enable writing and erasing 10 15 times or more. This applies not only to the PZT film but also to a case where a plate-like PZT single crystal or polycrystal without oxygen depletion is previously annealed in an inert atmosphere.
【０００９】本例では、強誘電体としてチタン酸ジルコ
ン酸鉛を一例として示したが、チタン酸バリュウムやチ
タン酸ストロンチュウムやチタン酸ビスマスあるいはゲ
ルマニューム酸鉛等の他の強誘電体にも適用できる事は
云うまでもない。In this embodiment, lead zirconate titanate is shown as an example of a ferroelectric substance, but the present invention is also applicable to other ferroelectric substances such as barium titanate, strontium titanate, bismuth titanate, and lead germanium oxide. Needless to say, we can do it.
【００１０】[0010]
【発明の効果】本発明により長寿命で、劣化の無い強誘
電体素子を提供する事ができる効果がある。According to the present invention, there is an effect that a ferroelectric element having a long life and without deterioration can be provided.
Claims (1)
工程と、 不活性雰囲気中にて前記強誘電体膜をアニールする工程
と、 前記結晶化された強誘電体膜上に上部電極を形成する工
程とを備えたことを特徴とする強誘電体素子の製造方
法。A step of forming a lower electrode on the substrate; a step of forming a ferroelectric film on the lower electrode; and annealing and crystallizing the ferroelectric film in an oxygen atmosphere.
A step, annealing the ferroelectric film in an inert atmosphere
And a step of forming an upper electrode on the crystallized ferroelectric film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15645792A JP3254734B2 (en) | 1992-06-16 | 1992-06-16 | Manufacturing method of ferroelectric element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15645792A JP3254734B2 (en) | 1992-06-16 | 1992-06-16 | Manufacturing method of ferroelectric element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05347229A JPH05347229A (en) | 1993-12-27 |
| JP3254734B2 true JP3254734B2 (en) | 2002-02-12 |
Family
ID=15628172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15645792A Expired - Lifetime JP3254734B2 (en) | 1992-06-16 | 1992-06-16 | Manufacturing method of ferroelectric element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3254734B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3119997B2 (en) * | 1994-06-21 | 2000-12-25 | 松下電子工業株式会社 | Method for manufacturing semiconductor device |
| US6287637B1 (en) * | 1997-07-18 | 2001-09-11 | Ramtron International Corporation | Multi-layer approach for optimizing ferroelectric film performance |
| US6204203B1 (en) | 1998-10-14 | 2001-03-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
-
1992
- 1992-06-16 JP JP15645792A patent/JP3254734B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05347229A (en) | 1993-12-27 |
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