JP3249606B2 - Laser processing method, semiconductor device and method for manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a layer annealing method which is excellent in reliability and mass productivity, has small variations, and has a high yield. In particular, the present invention relates to a method of annealing a silicon film, a step of crystallizing an amorphous or nearly amorphous state, or ion irradiation, ion implantation,
The present invention relates to a step of activating a silicon film that has been damaged by ion doping or the like and has significantly deteriorated crystallinity.

[0002]

2. Description of the Related Art In recent years, active research has been made on lowering the temperature of semiconductor device processes. One of the reasons is
This is because a semiconductor element has to be formed on an insulating substrate such as glass. Laser annealing technology is attracting attention as the ultimate low-temperature process.

[0003]

However, conventionally,
The laser annealing conditions and the like differed depending on each apparatus and the conditions of the coating, and were not sufficiently studied. As a result, there has been a consensus that the laser annealing technology has a very large variation and that it will never be put to practical use. The purpose of the present invention is to present such previously unrecognized conditions,
The goal is to obtain reproducible results by laser annealing.

[0004]

SUMMARY OF THE INVENTION The present inventors have found that a coating film is amorphous or very similar in crystallinity, especially from the initial state or due to damages such as ion irradiation, ion implantation, and ion doping. So, we were looking for optimization of laser annealing conditions in order to crystallize and activate a film that could not show sufficient characteristics even as a semiconductor, but in that case, only laser energy conditions It was found that the optimum conditions fluctuated depending on the pulse width and wavelength.

In the present invention, the film to be activated is a film mainly composed of silicon and has a thickness of 2 μm.
It is as follows. It is known that a laser having a short wavelength of 400 nm or less may be used for laser annealing of these films in consideration of light transmission.

For example, it is generally considered that when the energy density of a laser is high, activation is sufficiently performed and the sheet resistance is reduced. However, in practice, good reproducible results were not obtained due to the absorption characteristics of the laser beam and the instability of the laser.

[0007] The present inventor, when seeking the optimal conditions,
The pulse width of the laser was found to be important. That is, reproducibility was extremely poor with a pulse width of 50 nsec or less. This could not be explained by subtracting about 5% of the laser energy. Although this fact has not yet been completely explained, the present inventors have conducted detailed studies and found that defects are disordered when crystallization is progressed by irradiating a high-energy laser instantaneously. Has come to a conclusion. It was presumed that such defects were not evenly present, and that if a defect occurred, it would be a source of further defects. In order to prove this assumption, an experiment was conducted with various changes in the pulse width of the laser, and it was found that very good results were obtained if the pulse width was 50 nsec or more, preferably 100 nsec or more. .

Further, at the time of laser annealing, the coating is not exposed to the atmosphere, but has a thickness of 10 to 100 n.
It has been found that more favorable results are obtained when the film is covered with a transparent film of m or under reduced pressure.

Further, it has been found that the effect of laser annealing varies depending on the type of impurities. That is, the absorption coefficient of laser light differs depending on the type of impurity. At the above wavelength (400 nm or less), it was found that phosphorus, boron, and arsenic were suitable as impurities. Of course, this does not mean that other impurities are not suitable.

The irradiation of the laser beam may be performed from the back surface or the top surface of the substrate. However, when laser irradiation is performed from the back surface, the substrate material needs to transmit laser light.

FIG. 1 shows an example of an apparatus for implementing the present invention and an operation method thereof. Since FIG. 1 is conceptual,
As a matter of course, the actual device may include other components as necessary. Hereinafter, the method of use will be outlined.

In FIG. 1, a sample 14 is a sample holder 1.
5 is installed. First, the chamber 11 is evacuated by an exhaust system 17 connected to an exhaust device. In this case, it is desirable to evacuate to as high a vacuum as possible.
That is, atmospheric components such as carbon, nitrogen, and oxygen are generally not preferable for semiconductors. Such an element is taken into the semiconductor, but may reduce the activity of the impurity added at the same time. In addition, it impairs the crystallinity of the semiconductor and causes dangling bonds at grain boundaries. Therefore, it is 10 ^-6 torr or less, preferably 10 ^-6 torr.
It is desired to evacuate the chamber to ^-8 torr or less.

It is also desirable to operate the heater 16 before and after the exhaust to drive out the atmospheric components adsorbed inside the chamber. As used in current vacuum equipment, it is also desirable to provide a spare chamber in addition to the chamber so that the chamber does not directly contact the atmosphere. As a matter of course, it is desirable to use a turbo-molecular pump or a cryopump with less contamination of carbon or the like as compared with a rotary pump or an oil diffusion pump.

Next, a laser beam 13 is applied to the sample through the window 12. At this time, the sample is heated by the heater.
Heated to a certain temperature. The laser beam is usually applied to one place and about 5 to 50 pulses. If the energy of the laser pulse varies greatly and the number of pulses is small, the probability of occurrence of a defect is high. On the other hand, irradiating too many pulses to one location is not desirable in terms of mass productivity (throughput). According to the knowledge of the present inventor, the above pulse number was appropriate from the viewpoint of mass productivity and the yield.

In this case, for example, the pulse of the laser is 10
In the case of a specific rectangular shape of mm (x direction) × 30 mm (y direction), a laser pulse is applied to the same region by 1 mm.
A method of irradiating 0 pulses and moving to the next portion after the end may be adopted, but the laser may be moved by 1 mm in the x direction per pulse. As for the shape of the laser beam, it is rectangular as shown in FIG.
As shown in (1), a type in which the substrate is moved up, down, left, and right may be used.

After the laser irradiation is completed, the inside of the chamber is evacuated, the sample is cooled to room temperature, and the sample is taken out. Thus, in the present invention, the doping process is extremely simple and fast.

[0017]

【Example】

Embodiment 1 FIG. 3 shows a state of a doping apparatus of the present invention. That is, the chamber 31 is provided with a slit-shaped window 32 made of anhydrous quartz glass. The laser light is shaped into an elongated shape in accordance with the window.
The laser beam was, for example, a rectangle of 10 mm × 300 mm. Note that the position of the laser beam is fixed.
An exhaust system 37 and a gas system 38 for introducing a passivation gas are connected to the chamber. A sample holder 35 is provided in the chamber, a sample 34 is placed thereon, and an infrared lamp (functioning as a heater) 36 is provided below the sample holder. The sample holder is movable and can move the sample in accordance with the laser shot.

As described above, when the mechanism for moving the sample is incorporated in the chamber, the thermal expansion of the sample holder caused by the heater causes a disorder, so that extreme care is required for temperature control. . In addition, since dust is generated by the sample transfer mechanism, maintenance in the chamber is troublesome.

Embodiment 2 FIG. 4A shows a state of a doping treatment apparatus according to the present invention. That is, the chamber 40 is provided with a window 41 made of anhydrous quartz glass. Unlike the case of the third embodiment, this window is wide enough to cover the entire surface of the sample 43. The chamber has an exhaust system 4
5, and a gas system 46 for introducing a passivation gas. A sample holder 44 is provided in the chamber, and a sample 43 is placed on the sample holder 44. The sample holder has a built-in heater. The sample holder is fixed to the chamber. A chamber base 40a is provided below the chamber, and laser irradiation is sequentially performed by moving the entire chamber in accordance with a laser pulse. The laser beam has an elongated shape as in the first embodiment. For example, it was a rectangle of 5 mm × 100 mm. As in the first embodiment, the position of the laser beam is fixed. In the present embodiment, unlike the first embodiment, a mechanism for moving the entire chamber is employed. Therefore, there is no mechanical part in the chamber and no dust or the like is generated, so that maintenance is easy. Further, the transfer mechanism is hardly affected by the heat of the heater.

The present embodiment is superior to the first embodiment not only in the above points but also in the following points. That is, in the method of Example 1, after the sample was put in the chamber, laser emission could not be performed until the sample was evacuated to a sufficient degree of vacuum. That is, there were many dead times. However, in this embodiment, FIG.
Such a dead time does not occur if a large number of chambers are prepared and rotated sequentially in the order of sample loading, evacuation, laser irradiation, and sample removal. Such a system is shown in FIG.

That is, the chambers 40A and 40B containing the unprocessed samples are directed by the continuous transfer mechanism 50A to the gantry 50B having a stage capable of precise movement during the evacuation process. Chamber 4 on stage
At 0C, the laser light emitted from the laser device 47 and processed by the appropriate optical devices 48 and 49 is applied to the sample inside through the window. By moving the stage,
Chamber 40C where necessary laser irradiation was performed
Is again sent to the next stage by the continuous transport mechanism 50C, during which the heater in the chamber is turned off, evacuated, and the temperature is sufficiently lowered before the sample is taken out.

As described above, in the present embodiment, continuous processing can be performed, so that the waiting time for exhaust can be reduced, and the throughput can be improved. of course,
In the case of the present embodiment, although the throughput is improved, more chambers are required than in the case of the first embodiment, so that it should be carried out in consideration of the mass production scale and investment scale.

Embodiment 3 This embodiment is an example in which the doping method according to the present invention is applied to the manufacture of an NTFT provided on a glass substrate. In this embodiment, a glass substrate or a quartz substrate was used as the substrate. First, an SiO ₂ film is formed as a base protective film 52 on glass 51 as a substrate, and then a substantially intrinsic hydrogenated amorphous silicon semiconductor layer 53 is formed to a thickness of 100 nm by a plasma CVD method. . Next, device isolation patterning was performed. Then, the sample is placed in a vacuum (10 ^-6 Torr or less) for 4 hours.
Heating was performed at 50 ° C. for 1 hour to thoroughly remove hydrogen, and dangling bonds in the film were generated at a high density. afterwards,
An SiO ₂ film 54 was formed to a thickness of 100 nm by RF sputtering to obtain the shape shown in FIG. Then, the silicon oxide mask 54A was left only in the channel portion. Then, phosphorus ions were introduced into the silicon film by an ion doping method to form N-type impurity regions 55A and 55B. However, since the silicon oxide mask 54A exists, phosphorus is not implanted below the silicon oxide mask 54A.

Here, using the apparatus shown in FIG. 3, the activation of the impurities by the laser beam according to the present invention is performed. In the apparatus shown in FIG. 3, a sample (having the shape shown in FIG. 5B) is heated under an atmosphere of 10 ^-2 torr or less.
Laser annealing (activation) was performed by irradiating a laser beam. As a laser, a XeF laser (wavelength 350
nm, and a pulse width of 70 nsec). At this time, phosphorus is activated in the source and drain regions (55A and 55B shown in the drawing), so that the N-type is formed. At the same time, the channel formation region (53A shown in the drawing) is also transmitted by the silicon oxide mask 54A through the laser. Crystallizes.

After the formation of the source and drain regions, a gate electrode 56 is formed on a silicon oxide mask 54A (used as a gate oxide film as it is), and a SiO ₂ film 57 is formed as an interlayer insulating film to a thickness of 100 nm. Film on the
Punching and patterning for contact are performed, and aluminum as an electrode is deposited to form a source electrode 58A and a drain electrode 58B.
By performing hydrogen thermal annealing at a temperature of
As shown in (C), the NTFT was completed.

In this embodiment, self-aligned source and drain cannot be formed, but laser crystallization and activation can be performed simultaneously, and the junction between the source and the channel formation region and the junction between the drain and the channel formation region are continuous. Therefore, the characteristics were good and the long-term reliability was excellent.

[Embodiment 4] An embodiment of manufacturing a multilayer integrated circuit on an insulating substrate using the present invention will be described with reference to FIG. In this embodiment, Corning 705 is used as the substrate 61.
A ninth glass substrate was used. The substrate had a circular shape with a diameter of 2 inches and a thickness of 1.1 mm. Various other types of substrates can be used, but it is necessary to take measures according to the substrate so that mobile ions such as sodium do not enter the semiconductor film. An ideal substrate is a synthetic quartz substrate having a low alkali concentration, but when it is difficult to use it in terms of cost, a commercially available low-alkali glass or non-alkali glass is used.
In this embodiment, the silicon oxide film 6 having a thickness of 20 to 1000 nm, for example, 50 nm is formed on the substrate 61 by sputtering.
2 was formed. The thickness of the coating 62 is designed according to the degree of penetration of mobile ions or the degree of influence on the active layer.

These films may be formed not only by the sputtering method as described above, but also by a method such as a plasma CVD method. In particular, TEOS may be used. The selection of this means may be determined in consideration of investment scale, mass productivity, and the like.

After that, a monosilane is used as a raw material to a thickness of 20 to 200 nm, for example, 100
A nm-thick amorphous silicon film was formed. The substrate temperature was set to 520 to 560 ° C, for example, 550 ° C. The amorphous silicon film obtained in this way is heated at 600 ° C. for 2 hours.
Thermal annealing was performed for 4 hours. As a result, crystalline silicon called semi-amorphous silicon was obtained.

After the amorphous silicon film was converted into a crystalline silicon film by thermal annealing, it was etched into an appropriate pattern to form an island-shaped semiconductor region 63. Thereafter, a gate insulating film (silicon oxide) 64 having a thickness of 50 to 300 nm, for example, 100 nm was formed by a sputtering method using silicon oxide as a target in an oxygen atmosphere. This thickness is determined by the operating conditions of the TFT and the like.

Next, an aluminum film was formed to a thickness of 500 nm by a sputtering method, and this was patterned by a mixed acid (a phosphoric acid solution to which 5% nitric acid was added) to form a gate electrode / wiring 65. The etching rate was 225 nm / min when the etching temperature was 40 ° C. Thus, the outer shape of the TFT was adjusted. The size of the channel at this time is 8 μm in length and 2 μm in width.
It was set to 0 μm.

Further, aluminum oxide was formed on the surface of the aluminum wiring by anodic oxidation. The method of anodic oxidation is disclosed in Japanese Patent Application No. 3-23, which is an invention of the present inventors.
1188 or the method described in Japanese Patent Application No. 3-238713. A detailed embodiment may be changed depending on the characteristics of the target device, process conditions, investment scale, and the like. In this example, an aluminum oxide film having a thickness of 250 nm was formed by anodic oxidation.

Thereafter, an N-type source / drain region 66 was formed by ion implantation through a gate oxide film. The impurity concentration was set to 8 × 10 ¹⁹ cm ⁻³ .
Phosphorus ion is used as the ion source, and the accelerating voltage is 80 k.
Injected at eV. The acceleration voltage is set in consideration of the thickness of the gate oxide film and the thickness of the semiconductor region 63. Instead of the ion implantation method, an ion doping method may be used. In the ion implantation method, unnecessary ions are not implanted because ions to be implanted are separated by mass, but the size of a substrate that can be processed by the ion implantation apparatus is limited.
On the other hand, the ion doping method has the ability to process even a relatively large substrate (for example, a diagonal of 30 inches or more).
Since hydrogen ions and other unnecessary ions are simultaneously accelerated and implanted, the substrate is easily heated.

Thus, a TFT having an offset region was manufactured. Furthermore, the source / drain regions were recrystallized by laser annealing using the gate electrode as a mask. The laser is the fourth harmonic (wavelength 26) of a Nd: YAG laser excited by a xenon lamp.
5 nm and a pulse width of 150 nsec) were used. The energy density was 250 mJ / cm ² and the number of shots was 10
Shot. Then, as the interlayer insulator 67, silicon oxide was formed by an RF plasma CVD method. Figure 6 shows this situation.
It is shown in (A).

When irradiating the laser, the substrate is
When heated to 400 ° C., for example, 350 ° C., a silicon film having high reproducibility and high mobility was obtained. For example, when the substrate is heated to 350 ° C. and irradiated with a laser, the average electron mobility of the silicon film is 80 cm ² / Vs.
In the range of 70 to 90 cm ² / Vs, 80% was present. On the other hand, when the substrate temperature was set to room temperature and laser irradiation was performed, the average value was 60 cm ² / Vs, and the average value was 50 to 70 cm ² / Vs.
Only 40% was present in the ² / Vs range. Thus, the reliability could be improved by maintaining the substrate temperature at an appropriate temperature.

Thereafter, the interlayer insulator 67 and the gate insulating film 6
4, a contact hole is formed, and an aluminum film is formed by sputtering to a thickness of 250 to 1000 nm, for example, 500 nm.
A wiring 68 of the first integrated circuit layer was formed by patterning. Then, a polyimide material (for example, Semico Fine manufactured by Toray) is manufactured by spin coating.
Was applied and condensed at 450 to 550 ° C. to form a polyimide film 69 having a thickness of 0.5 to 5 μm, for example, 3 μm. Its flatness is 0.1μ in a 2-inch wafer
m. FIG. 6B shows the state up to this point.
Shown in

Thereafter, an amorphous silicon film is deposited at a substrate temperature of 300 to 400 ° C., for example, 320 ° C. by a plasma CVD method, and is patterned into an island shape. Thus, a silicon oxide film 71 was formed. Further, in this state, the above-mentioned laser beam was irradiated to crystallize the island-shaped semiconductor region 70. This situation is shown in FIG.

In this embodiment, when irradiating the laser, in this embodiment, the activation of the source / drain 66 and the crystallization of the semiconductor region 70 are performed by dividing a 2-inch wafer into 32 parts as shown in FIG. In the order of the numbers, substantially square laser beams (hatched portions in the figure) were irradiated in order. Although laser annealing may seem to be less productive than thermal annealing, the YAG used in this example
The repetition frequency of the laser is 200 Hz, and the time required for processing one place on the wafer is 0.1 second. Therefore, taking into account the time required for the wafer to move, the time required to process one wafer is less than 10 seconds.
Zero or more wafers can be processed.

Increasing the wafer or increasing the output of the laser eliminates the need for replacement of the wafer and increases the area of the laser beam, thereby further reducing the processing time.

Thereafter, as in the first integrated circuit layer,
After forming a gate wiring / electrode 72 with aluminum (covered with an anodic oxide film), a source / drain 73 is formed by implanting boron ions and laser annealing, and a silicon oxide film 74 is deposited by a sputtering method. This was used as an interlayer insulator. This is shown in FIG.

Next, a contact hole 75 was formed through the interlayer insulator (silicon oxide) 74, the gate insulating film (silicon oxide) 71, and the interlayer insulator (polyimide) 69 (FIG. 6E). The diameter of the contact hole was 6 μm, twice the thickness of the polyimide interlayer insulator. Then, an aluminum film is formed to a thickness of 250 to 30 by sputtering.
After the contact hole was completely formed by forming the contact hole to a thickness of 00 nm, for example, 1500 nm, the contact hole was etched by 1000 nm by anisotropic etching. After that, the aluminum film was patterned to form a wiring 76. At this time, if the film thickness of aluminum is small, disconnection occurs in the contact hole, so care must be taken.

In this way, a two-layer integrated circuit as shown in FIG. 6F was formed. To form a multi-layer integrated circuit, the above operation may be repeated.

Embodiment 5 FIG. 7 shows this embodiment. In this embodiment, a CMOS circuit is manufactured using the present invention. First, a base oxide film 81 having a thickness of 20 to 200 nm was deposited on a quartz substrate 80 by a sputtering method. Further, an amorphous silicon film 82 having a thickness of 150 to 250 nm was deposited thereon by a plasma CVD method or a low pressure CVD method using monosilane or disilane as a raw material. At this time, the concentration of oxygen and nitrogen in the amorphous silicon film is 10 ¹⁸ cm ^-2 or less, preferably 1
0 ¹⁷ cm ^-2 or less. The low pressure CVD method is suitable for this purpose. In this embodiment, the oxygen concentration is set to 10 ¹⁷ cm ⁻² or less.

Then, the protective film 83 (silicon oxide film, thickness 5
(0 to 150 nm) and annealed in an atmosphere of argon or nitrogen at 600 ° C. for 4 to 100 hours to crystallize. This state is shown in FIG.

Thereafter, these Si films are patterned into an island shape, and as shown in FIG.
A MOS region 84B was formed. Further, these island-shaped regions are covered, and a silicon oxide film (thickness: 50) is formed by a sputtering method.
To 150 nm), which was used as a gate insulating film 85. Thereafter, an aluminum film having a thickness of 200 nm to 5 μm was formed by a sputtering method, this was patterned, and an electric current was applied to this in an electrolytic solution to form an anodic oxide film on the upper surface and side surfaces of the film. Through the above steps, gate electrode portions 86A and 86B were formed in each island region.

Thereafter, impurities were implanted into the island-like silicon film of each TFT in a self-aligned manner by using the gate electrode as a mask by ion doping. In this case, first, phosphorus is implanted into the entire surface using phosphine (PH ₃ ) as a doping gas, and then only the island-like region 84B in the figure is covered with a photoresist, and diborane (B ₂ H ₆ ) is used as a doping gas. Then, boron was implanted into the island-shaped region 84A. The dose amount is 2 to 8 × 10 ¹⁵ cm ⁻² for phosphorus and 4 to 10 × for boron.
It was set to 10 ¹⁵ cm ^-2 so that the dose of boron exceeded that of phosphorus.

Since the crystallinity of the silicon film was destroyed by the doping process, the silicon film was activated by laser annealing according to the present invention. Activation was performed using the apparatus shown in FIG. In the device shown in FIG.
The sample (having the shape shown in FIG. 5B) was heated in an atmosphere of 10 ⁻² torr or less, and was irradiated with laser light to perform laser annealing (activation). XeF laser (wavelength 350 nm, pulse width 70 n)
sec) was used. Normally, the laser beam is applied from the upper surface, but in this embodiment, the laser light is applied from the back surface. In the case of such backside irradiation, the substrate material must transmit laser light. At this time, the source and drain regions (87A and 87B shown in the figure) are activated by laser irradiation, and simultaneously, the channel forming region is also irradiated with laser light. Therefore, the crystallinity between the channel formation region and the source / drain becomes continuous even at the boundary, which contributes to improvement in reliability.

By the above steps, the P-type region 87A,
And N type region 87B. The sheet resistance in these regions was 200 to 800 Ω / □. afterwards,
A silicon oxide film having a thickness of 300 to 1000 nm was formed as an interlayer insulator 88 over the entire surface by a sputtering method. this is,
It may be a silicon oxide film formed by a plasma CVD method. In particular, a silicon oxide film with good step coverage can be obtained by a plasma CVD method using TEOS as a raw material.

Thereafter, a contact hole is formed in the source / drain (impurity region) of the TFT, and an aluminum wiring 89 is formed.
A to 89D were formed. Finally, 250-35 in hydrogen
Annealing was performed at 0 ° C. for 2 hours to reduce dangling bonds in the silicon film. TFT obtained by the above process
Typical mobility is 60 cm ^{2 for} both PMOS and NMOS.
/ Vs.

[0050]

According to the present invention, the optimum laser annealing is performed, whereby a highly reliable semiconductor film with little variation can be obtained and a highly reliable semiconductor element can be formed. Thus, the present invention is considered to be industrially useful.

[Brief description of the drawings]

FIG. 1 shows a conceptual diagram of a laser annealing apparatus for carrying out the present invention.

FIG. 2 shows a procedure of laser treatment in the present invention.

FIG. 3 shows an example of a laser annealing apparatus used in the embodiment.

FIG. 4 shows an example of a laser annealing apparatus used in the embodiment.

FIG. 5 illustrates a manufacturing process of a TFT in an example.

FIG. 6 shows a manufacturing process of a TFT in an example.

FIG. 7 shows a process for manufacturing a TFT in an example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Optical gantry 2 Laser device (oscillation stage) 3 Laser device (amplification stage) 4 Beam shaping optical system 5-9 Total reflection mirror 10 Sample stage and drive mechanism 11 Sample (glass substrate)

Continuation of the front page (56) References JP-A-5-102060 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/20

Claims (14)

(57) [Claims] A film having a thickness of 2 μm or less and containing silicon as a main component has a wavelength of 400 nm or less and a pulse width of 50 ns.
a laser processing method of irradiating a pulse laser beam having a rectangular shape or more and an irradiation cross section being rectangular , wherein an area irradiated with the pulse laser beam is irradiated for each pulse.
Moving and irradiating the pulsed laser light before and after the movement
A laser processing method characterized by overlapping 80 to 98% of the selected area . 2. A coating mainly composed of silicon having a thickness of 2 μm or less, having a wavelength of 400 nm or less and a pulse width of 50 ns.
c or more , and a laser processing method of irradiating a rectangular pulsed laser light having an elongated irradiation cross-section , wherein the area irradiated with the pulsed laser light is pulsed every pulse.
Moving and irradiating the pulsed laser light before and after the movement
A laser processing method characterized by overlapping 80 to 98% of the selected area . 3. The main component is silicon having a thickness of 2 μm or less.
The coating has a wavelength of 400 nm or less and a pulse width of 50 ns
a rectangular pal whose irradiation cross section is not less than c
A laser processing method of irradiating a pulsed laser beam , wherein an area irradiated with the pulsed laser beam is
Moving and irradiating the pulsed laser light before and after the movement
Characterized in that 80 to 98% of the selected area is overlapped.
User processing method. Wherein any one smell of claims 1 to 3
And that the pulse width is 100 nsec or more.
Laser treatment method. 5. The laser processing method according to claim 1, wherein the pulsed laser beam is applied to one location 5 to 50 times. 6. The pulse laser beam according to claim 1, wherein the pulse laser beam is 1.3 × 10 ⁻⁴ Pa or less.
A laser processing method characterized in that irradiation is performed under a pressure of . 7. The method of claim 1 or any one of claims 6, wherein the pulsed laser beam, and mainly composed of silicon
A laser processing method, wherein irradiation is performed from the back surface of a substrate provided with a coating to be formed . 8. The laser processing method according to claim 1, wherein the film containing silicon as a main component contains phosphorus, arsenic, or boron. 9. Any one smell of claims 1 to 8
When irradiating the pulsed laser light, the silicon
Is heated to 300-400 ° C
A laser processing method, characterized in that: 10. The method according to claim 1, wherein
The film containing silicon as a main component is
Laser processing characterized by being a silicon film
Law. 11. A any one of claims 1 to 10
In this case, the amorphous silicon film is
Characterized by being crystallized by irradiation of laser light
Laser treatment method. 12. The method according to claim 1, wherein
The pulsed laser light is a pulsed N
d: a laser characterized by being a YAG laser beam
Processing method. 13. any one of claims 1 to 12
Semiconductor using the laser processing method described in the above.
Method of manufacturing a body element. 14. The method according to claim 1, wherein:
It is manufactured using the laser processing method described.
Semiconductor element.