JP3375988B2 - Laser processing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for efficiently performing doping or other chemical or physical treatment in a low temperature process.

[0002]

2. Description of the Related Art Conventionally, a thermal diffusion method or an ion implantation method has been known as a doping technique. The thermal diffusion method is a method in which impurities are diffused into a semiconductor in a high temperature atmosphere of 1000 to 1200 degrees, and the ion implantation method is a method in which ionized impurities are accelerated by an electric field and implanted into a predetermined place.

However, the diffusion coefficient D of impurities is D =
It depends exponentially on the absolute temperature T as shown by D ₀ exp [−E _a / kT]. Where D ₀ is the diffusion coefficient at T = ∞, E _a is the activation energy, and k is the Boltzmann coefficient. Therefore, in order to efficiently diffuse the impurities into the semiconductor, it is desirable to carry out at a temperature as high as possible, and in the thermal diffusion method, it is general to carry out at a high temperature step of 1000 ° C. or more. Further, in the ion implantation method, a post heat treatment step at a temperature of 600 to 950 degrees is required for activation of impurities and recovery of defects.

In recent years, some active matrix type liquid crystal display devices using a TFT (thin film transistor) provided on a glass substrate as a switching element of a pixel have been put into practical use. However, these are ohmic contacts for the source and drain regions of the TFT. Generally, the contact is made of one conductivity type amorphous silicon. In addition, the structure of the TFT is of the inverted stagger type, and it is easy to generate parasitic capacitance due to structural problems. Therefore, the TFT in which the source and drain regions are formed in a self-aligned manner (self-aligned)
However, in order to form the source and drain regions in a self-aligned manner, an ion implantation method or an ion shower method must be used. However, these methods require a post-heat treatment step at a temperature of 600 to 950 degrees for activation of impurities and recovery of defects as described above, and the heat resistant temperature of a general inexpensive glass substrate is 600 degrees. It was difficult to industrially use it, considering that it is up to 700 degrees.

As a method for solving the problem of heat damage given to such a glass substrate, a doping technique by irradiation with laser light is known. As one of the methods, there is a method in which a thin film of impurities is formed on the surface of a semiconductor to be doped, and the thin film of the impurities and the semiconductor surface are melted by irradiation with laser light to dissolve the impurities.

The above method of doping by excimer laser light irradiation has the advantage of suppressing the generation of defects due to heat damage because it does not cause heat damage to the glass substrate, but forms a film of impurities. It was necessary to go through the process. Conventionally, a coating method such as a spin coating method has been used for forming this film. However, in this step, if the thickness uniformity of the film is not good, the doping concentration of impurities will be different, so this is not an ideal method. Further, this coating is usually formed by using an organic solvent as a solvent, but in that case, undesirable elements such as carbon, oxygen, and nitrogen may enter the semiconductor to deteriorate the characteristics.

[0007]

DISCLOSURE OF THE INVENTION The present invention has been made in view of the problems such as complication of the process and invasion of foreign elements, which are problems in the doping technique using the above laser light, especially excimer laser light. It is a thing. Therefore, the present invention is intended to perform doping by using a vapor-phase high-purity doping gas without using a liquid-phase or solid-phase doping material. The purpose is to prevent. Further, it is an object of the invention to increase the doping efficiency. Further, the present invention has an object of performing doping of various materials (insulators and conductors) and their surfaces, and materials accompanying them and improvement of the surfaces thereof, in addition to the doping of semiconductor materials. For example, the doping of phosphorus into the silicon oxide film or the like.

[0008]

In order to solve the above-mentioned problems, a laser processing apparatus of the present invention comprises a laser apparatus,
A plurality of chambers each having a window for allowing a laser beam emitted from the laser device to enter the interior thereof, and a holder for placing an object to be processed therein; a transfer means capable of transferring a plurality of the chambers; A movable stage in which the chamber is placed, and the plurality of chambers are sequentially transported to the stage by the transport means, and while moving the chamber placed on the stage, the chamber is moved into the chamber. The object to be processed placed on the holder is irradiated with the laser light incident through the window. The laser processing apparatus of the present invention is
A laser device, a plurality of chambers provided with a window for allowing a laser beam emitted from the laser device to enter the interior, and a holder for placing an object to be processed therein;
A movable stage in which one of the chambers is placed, a plurality of the chambers can be transported, a transport unit that transports the chambers onto the stage, and a plurality of the chambers can be transported, and the chamber is placed on the stage. While moving the conveying means for moving the chamber on the stage from the stage and the chamber placed on the stage, the laser light incident through the window into the chamber was placed on the holder. It is characterized in that the object to be processed is irradiated. The laser processing apparatus of the present invention includes a laser device, an optical device for making the cross section of the laser light emitted from the laser device into an elongated rectangular shape, and an optical device for injecting the laser light passing through the optical device into the inside. A plurality of chambers each having a window and a holder for placing an object to be processed therein; a transport means capable of transporting the plurality of chambers; and a movable stage on which one chamber is placed, Each of the chambers is sequentially transported to the stage by the transporting means, and while moving the chamber placed on the stage, the laser beam incident through the window into the chamber was placed on the holder. It is characterized in that the object to be processed is irradiated. The laser processing apparatus of the present invention is
A laser device and an optical device for making a cross section of laser light emitted from the laser device into an elongated rectangular shape,
A plurality of chambers each having a window for allowing a laser beam that has passed through the optical device to enter therein, and a holder for placing an object to be processed therein; a movable stage in which one of the chambers is placed; A plurality of chambers that can be transferred, a transfer unit that transfers the chambers to the stage, a transfer unit that can transfer the chambers to the chamber, and a transfer unit that moves the chambers on the stage from the stage; It is characterized in that the object placed on the holder is irradiated with a laser beam incident through the window into the chamber while moving the chamber placed above. Each of the plurality of chambers in the laser processing apparatus of the present invention is characterized by being provided with heating means for heating an object to be processed. The plurality of chambers in the laser processing apparatus of the present invention are characterized in that they can be independently evacuated. The plurality of chambers in the laser processing apparatus of the present invention are characterized by being capable of independently introducing gas. The laser device in the laser processing device of the present invention is characterized by emitting pulsed laser light. The laser device in the laser processing device of the present invention is an excimer laser device. The laser processing apparatus of the present invention irradiates the sample semiconductor surface with laser light in a high-purity reactive gas atmosphere containing impurities imparting one conductivity type to remove impurities imparting one conductivity type. It can be used for doping in the sample semiconductor. However, according to the knowledge of the present inventor, diffusion of elements was not sufficient when the sample semiconductor was at a low temperature such as room temperature. The ray of the present invention
The chambers in the
Electrodes are provided to give energy to the atmosphere
It is characterized by

Therefore, impurities are diffused into the sample semiconductor.
For, one of the inventors knowledge, at the time of the laser irradiation, the sample is heated, by keeping at least 200 ° C. or higher, allowed promotes diffusion of an impurity element, also the high concentration impurity doped It is something to try. The substrate heating temperature varies depending on the type of semiconductor,
In the case of polysilicon (polycrystalline silicon) and semi-amorphous silicon, 250 to 500 ° C., preferably 30
0-400 degreeC is suitable.

When the sample is heated and irradiated with a laser as described above, not only the impurities are easily diffused but also the semiconductor whose crystallinity is temporarily lowered by the irradiation of the laser is generated.
Since a sufficiently long relaxation time can be thermally provided, the crystallinity is easily recovered. The laser irradiation is typically rapid heating and rapid cooling when the sample is not heated to an appropriate temperature, particularly in the case of pulsed laser irradiation, so that the semiconductor is likely to show an amorphous state. That is, 100
Although it is heated to 0 ° C. or higher, it drops to room temperature after several 100 nsec. If the sample was heated as silicon in the above range, the time required for the temperature to drop to around 500 ° C. which is the lower limit of the crystallization temperature of silicon is 10 times or more that at room temperature. It is calculated.
At this stage, if the laser irradiation time continues for a certain period of time or longer, the silicon melts and the impurities permeate inside due to convection of the melt. Also, if the pulse does not continue for a certain period of time, the silicon crystallizes in a solid phase,
It becomes so-called semi-amorphous, but at that time, the impurities diffuse inside in a solid phase.

Too high a temperature is undesirable. This is because the reactive gas itself decomposes at high temperatures and adheres not only to the sample but also to its holder and the like, and the gas utilization efficiency decreases.

Further, it is not desirable to keep the temperature higher than the crystallization temperature of the semiconductor. In particular, this is not desirable in semiconductors with many defects such as polycrystalline semiconductors, amorphous semiconductors, and semi-amorphous semiconductors. This is because if a crystalline semiconductor is doped while being heated at a temperature equal to or higher than the crystallization temperature, it is difficult to control valence electrons due to the generation of levels. It is 500-550 that amorphous silicon changes into polysilicon thermally
Since the temperature is said to be 0 ° C, it is desirable that the temperature be lower than this temperature, preferably 100 ° C or lower (that is, 400 to 450 ° C or lower). Further, in the case of a TFT using amorphous silicon (referred to as a-Si: TFT) , if the a-Si: TFT is heated to a temperature of 350 ° C. or higher, the element is destroyed.
It is suitable to carry out the heating at a temperature of 50 degrees or less. The same applies to other semiconductors.

[0013] One other inventors' knowledge, the above laser light, particularly in doping technique from the vapor phase using an excimer laser beam, if an attempt is made a plurality of doping with different doping gas, In a single laser beam, the absorption characteristics of the doping gas are different, and in order to solve the deterioration of the doping efficiency due to the different decomposition characteristics depending on the type of gas, in a reactive gas atmosphere containing impurities imparting one conductivity type. During laser irradiation, electromagnetic energy is added to decompose the reactive gas. At this time, when the laser light is irradiated, at the same time, as described above , the semiconductor to be doped, which is a sample, is heated at an appropriate temperature to further improve the doping efficiency .

In the above description, the impurity imparting one conductivity type is a trivalent impurity, typically B, in the case of using a silicon semiconductor (silicon) as a semiconductor, if P-type is imparted. (Boron) or the like can be used, and a pentavalent impurity, typically P (phosphorus) or As (arsenic), can be used if N-type is imparted. As a reactive gas containing these impurities, As
_{H 3, PH 3, BF 3} , BCl 3, B (CH 3) can be used ₃ or the like.

As a semiconductor, if a TFT is to be manufactured, an amorphous silicon semiconductor thin film formed by a vapor phase growth method, a sputtering method or the like is generally used. Also,
It can be applied polycrystalline or monocrystalline silicon semiconductor fabricated by liquid phase growth. Further, it is needless to say that the semiconductor is not limited to the silicon semiconductor and may be another semiconductor.

As the laser light, it is useful to use a pulse oscillation type excimer laser device. this is,
This is because in the pulsed laser, the heating of the sample is instantaneous and is limited only to the surface and does not affect the substrate. Since the heating by the laser is local, in the continuous wave laser (argon ion laser or the like), the heated portion may be peeled off due to a significant difference in thermal expansion between the heated portion and the substrate. In this respect, in the pulse laser, the thermal relaxation time is overwhelmingly shorter than the reaction time of mechanical stress such as thermal expansion, and no mechanical damage is caused. Of course, the impurities in the substrate are hardly diffused by heat.

In particular, excimer laser light is ultraviolet light, is efficiently absorbed by many semiconductors including silicon, and has a short pulse duration of 10 nsec.
Further, the excimer laser has already been used in an experiment of crystallizing an amorphous silicon thin film by laser irradiation to obtain a polycrystalline silicon thin film having high crystallinity. ArF is a specific type of laser.
Excimer laser (wavelength 193 nm), XeCl excimer laser (wavelength 308 nm), XeF excimer laser (wavelength 351 nm), KrF excimer laser (24
It is suitable to use 8 nm) or the like.

In the laser processing apparatus of the present invention, as the means for heating the substrate, a conductive type in which a nichrome wire, a kanthal wire, or another heating element is directly incorporated in the holder may be used, but an infrared lamp or the like. The radiation type may be used. However, since the substrate temperature has a great influence on the impurity doping concentration and the depth, it is desired that the control be performed precisely. Therefore,
A temperature sensor such as a thermocouple is indispensable for the sample.

In the laser processing apparatus of the present invention, the electromagnetic energy applied to decompose the reactive gas for doping (referred to as doping gas) is 13.
High frequency energy of 56 MHz is common. By the decomposition of the doping gas by this electromagnetic energy, the doping can be efficiently performed even when the laser light that cannot directly decompose the doping gas is used. The type of electromagnetic energy is not limited to the frequency of 13.56 MHz, and if a microwave of 2.45 GHz is used, for example, a higher activation rate can be obtained. Furthermore, the ECR condition generated by the interaction between the microwave of 2.45 GHz and the magnetic field of 875 Gauss may be used. It is also effective to use light energy that can directly decompose the doping gas.

In the above description, the knowledge of the inventor of the present invention has been described with respect to the doping technique in semiconductors, but the present invention is not limited to this and can be applied to a wide range of applications. For example, in metal,
In particular the thickness of the portion of the surface, even in the case of addition of a few% of trace elements, such as improving the surface material, it is possible to apply the doping technique based on the inventors findings described above. For example, laser light in ammonia on the surface of iron
Irradiation , nitrogen doping, surface number to several 100n
m may be iron nitride.

[0021] Alternatively, knowledge also of the present invention people in the oxide
The effect can be obtained by applying the doping technique based on the sight . For example, it is possible to raise the superconducting critical temperature by irradiating a bismuth oxide high temperature superconductor thin film with laser light in lead chloride vapor to contain lead. Conventionally, it is known that there are several types of bismuth oxide high temperature superconductors, and the maximum critical temperature is 1
It was about 10K. However, it was difficult to obtain a phase having a critical temperature exceeding 100K. 10 when lead is added
Although it has been known that a phase exceeding 0K can be easily obtained, in the process of forming a thin film, lead tends to evaporate to the outside due to the influence of substrate heating. However, the doping due to the irradiation of laser light to which the present invention is applied
Koo, because it is non-thermal equilibrium reaction, can be incorporated into effective film materials lead. Similarly, in recent years, it has been attracting attention as a functional material for semiconductor integrated circuits, particularly semiconductor memories, and can be applied to PZT (lead zirconia titanium oxide) which is a lead-containing ferroelectric.

Also, an insulator such as silicon oxide can be used when adding a trace amount of impurities.
As has been already used in semiconductor processes, silicon oxide is often made to contain phosphorus in an amount of about several percent to form phosphorus glass. Of course, it is also possible to incorporate phosphorus in the silicon oxide to apply the doping technique based on the present inventor <br/> findings as described above. For example, 1 × 10 ²⁰ ~
Phosphorus may be diffused at a concentration of 3 × 10 ²⁰ cm ⁻³ .

This phosphorus glass is known to prevent mobile ions such as sodium from entering the inside of the semiconductor from the outside. In the past, the film was formed in a CVD chamber dedicated to phosphorous glass (PSG), but this requires a dedicated device, which is costly. When the present invention is used, the laser doping apparatus can be commonly used for doping impurities in semiconductors and for forming phosphorus glass, and the film forming apparatus for silicon oxide can be widely used for other purposes. It does not raise the price and is economical.

In particular, doping based on the knowledge of the present inventor
The implementation of the technique was effective in improving the characteristics of the silicon oxide film formed by using various organic silanes (tetra-ethoxy-silane (TEOS) or the like) at a relatively low temperature (600 ° C. or lower). That is, in such a film, a large amount of carbon in the raw material is contained and the insulating property is poor, and when this film is used as an insulating film of a MOS structure or the like, the trap level is too large, It was not a good material.

However, when the laser doping of phosphorus is carried out according to the present invention, the carbon is removed from the film by the heating of the laser irradiation, the trap level is remarkably reduced, and the insulating property is also improved. As already mentioned,
The distribution of impurities in the depth direction can be controlled by changing the substrate temperature during laser doping. Therefore, to deeply distribute phosphorus in the silicon oxide film, the substrate temperature is kept at 200 ° C. or higher, preferably 350 to 450 ° C., and to distribute only at a depth of 100 nm or less, the substrate is kept at room temperature or lower. I'm good.

Further, when a semiconductor material such as amorphous silicon is present in the base during laser doping, these semiconductor materials are simultaneously annealed to improve the crystallinity. That is, the silicon oxide film has a low absorptance with respect to ultraviolet rays, and most of the laser light is absorbed by the semiconductor material thereunder. Therefore, the two steps can be performed at the same time, which is effective for improving mass productivity.

A doping technique based on the knowledge of the present inventor
The conceptual diagram of the laser processing apparatus for implementing is shown in FIG.5 and FIG.6. FIG. 5 shows a device having only a substrate heating device, and FIG. 6 shows a device having an electromagnetic device for generating plasma in addition thereto. Since these drawings are conceptual, it is needless to say that the actual device may include other components as necessary. The usage method is outlined below.

In FIG. 5, the sample 24 is the sample holder 2
It is installed on the 5th. First, the chamber 21 is evacuated by an exhaust system 27 connected to an exhaust device. In this case, it is desirable to evacuate to the highest vacuum possible.
That is, atmospheric components such as carbon, nitrogen, and oxygen are generally not preferable for semiconductors. Although such an element is incorporated into the semiconductor, it may reduce the activity of impurities added at the same time. In addition, the crystallinity of the semiconductor is impaired, which causes a dangling bond at the grain boundary. Therefore, it is not more than 10 ^-6 torr, preferably 10
It is desirable to evacuate the chamber to ^-8 torr or less.

It is also desirable to operate the heater 26 before and after the exhaust to expel the atmospheric components adsorbed inside the chamber. It is also desirable to provide a spare chamber in addition to the chamber so that the chamber does not come into direct contact with the atmosphere, as is used in current vacuum equipment. As a matter of course, it is desirable to use a turbo molecular pump or a cryopump with less pollution of carbon and the like than a rotary pump or an oil diffusion pump.

When exhausted sufficiently, the reactive gas is introduced into the chamber by the gas system 28. The reactive gas may consist of a single gas or may be diluted with hydrogen, argon, helium, neon or the like. The pressure may be atmospheric pressure or lower. These are selected in consideration of the type of target semiconductor, the impurity concentration, the depth of the impurity region, the substrate temperature, and the like.

Next, the sample is irradiated with laser light 23 through the window 22. At this time, the sample is
It is heated to a constant temperature. The laser light is usually applied to one place for about 5 to 50 pulses. The variation in the energy of the laser pulse is sufficiently large, and therefore, when the number of pulses is too small, the probability of occurrence of defects is high. On the other hand, irradiating too many pulses at one location is not desirable from the viewpoint of mass productivity (throughput). According to the knowledge of the present inventor, the above-mentioned number of pulses was appropriate in terms of mass productivity and yield.

In this case, for example, the pulse of laser is 10
When a specific rectangular shape of mm (x direction) x 30 mm (y direction) is used, 1 laser pulse is applied to the same region.
A method of irradiating 0 pulse and moving to the next portion after completion may be used, but the laser may be moved by 1 mm in the x direction per pulse.

After the laser irradiation is completed, the chamber is evacuated, the sample is cooled to room temperature, and the sample is taken out. As described above, the doping process based on the knowledge of the present inventor is extremely simple and fast. That is, in the conventional ion implantation process, three steps of (1) formation of a doping pattern (resist coating, exposure, development) (2) ion implantation (or ion doping) (3) recrystallization are required, In addition, even with solid phase diffusion by conventional laser irradiation, (1) doping pattern formation (resist coating, exposure, development) (2) impurity film formation (spin coating, etc.) (3) laser irradiation, which also requires three steps Met. However,
The doping technique based on the knowledge of the present inventors is completed in two steps of (1) formation of a doping pattern (resist coating, exposure, and development) (2) laser irradiation.

The apparatus of FIG. 6 is almost the same as the case of FIG. First, the inside of the chamber 31 is evacuated by the exhaust system 37, and the reactive gas is introduced from the gas system 38. Then, with respect to the sample 34 on the sample holder 35,
Laser light 33 is emitted through the window 32. At that time, electric power is applied to the electrode 39 from a high frequency or alternating current (or direct current) power source 40 to generate plasma or the like inside the chamber to activate the reactive gas. Although the electrodes are shown as capacitively coupled in the figure, they may be inductive (inductance) coupled. Furthermore, even if it is a capacitive coupling type, the sample holder may be used as one electrode. The sample may be heated by the heater 36 during laser irradiation. Hereinafter, the present invention will be described in more detail with reference to examples.

[0035]

Example 1 In this example, a laser beam is irradiated to manufacture an N-channel thin film type insulated gate field effect transistor (hereinafter referred to as NTFT) provided on a glass substrate.
This is an example of applying a doping method of irradiation . In this example, a glass substrate or a quartz substrate was used as the substrate.
This is because the TFT manufactured in this example is intended to be used as a switching element or a driving element of an active matrix type liquid crystal display device or an easy sensor. Of course, this embodiment may be applied as another semiconductor device, for example, a P-type semiconductor layer or an N-type semiconductor layer of a photoelectric conversion device, or a doping technique for manufacturing a single crystal semiconductor integrated circuit. Therefore, as the substrate, a single crystal or polycrystal of silicon or another semiconductor may be used, or another insulator may be used.

First, in FIG. 1, a SiO ₂ film or a silicon nitride film is formed on a glass substrate 11 which is a substrate as a base protective film 1.
Form as 2. In this example, oxygen 100%
SiO ₂ by RF sputtering in an atmosphere
The film 12 was formed to a thickness of 200 nm. The film forming conditions are as follows. O ₂ flow rate 50sccm pressure 0.5pa RF power 500W substrate temperature 150 degrees

Next, 100 n of an intrinsic or substantially intrinsic (meaning that no impurities are artificially added) hydrogenated amorphous silicon semiconductor layer 13 is formed by plasma CVD.
It is formed to a thickness of m. This hydrogenated amorphous silicon semiconductor layer 1
A semiconductor layer 3 constitutes a channel forming region and source / drain regions. The film forming conditions are as follows. Atmosphere Silane (SiH ₄ ) 10
0% Film formation temperature 160 degrees (Substrate temperature) Film formation pressure 0.05 Torr Input power 20W (13.56MH)
z)

Although silane is used as a raw material gas for forming amorphous silicon in this embodiment, the crystallization temperature is lowered when the amorphous silicon is polycrystallized by thermal crystallization. For this purpose, disilane or trisilane may be used.

When the film forming atmosphere is 100% silane,
This is based on the experimental result that an amorphous silicon film formed in a 100% silane atmosphere is more easily crystallized than an amorphous silicon film formed in a silane atmosphere diluted with hydrogen, which is generally performed. Is. Further, the film formation temperature is low because a large amount of hydrogen is contained in the formed amorphous silicon film and the bond of silicon is neutralized by hydrogen as much as possible.

High frequency energy (13.56 MH
The input power of z) is as low as 20 W in order to prevent the formation of silicon clusters, that is, portions having crystallinity during film formation as much as possible. This is also based on the experimental fact that if the amorphous silicon film has a little crystallinity, it will adversely affect the crystallization during the subsequent laser irradiation.

Next, device isolation patterning was performed to obtain the shape shown in FIG. Then, the sample is placed in a vacuum (10 ⁻⁶ Torr
In the following), heating was performed at 450 ° C. for 1 hour, hydrogen was thoroughly degassed, and dangling bonds in the film were formed at high density.

Further, the sample was transferred to the laser irradiation apparatus shown in FIG. 5 and irradiated with an excimer laser to polycrystallize the sample. In this step, a KrF excimer laser (wavelength 248 nm) was used. The conditions are as follows. Laser irradiation energy density 350 mJ
/ Cm ² pulse number 1-10 shots Substrate temperature 400 degrees After laser irradiation, the temperature was lowered to 100 degrees in a hydrogen depressurized atmosphere (about 1 Torr).

Although the amorphous silicon film is crystallized by laser light irradiation in this embodiment, it goes without saying that this may be replaced with a heating process.
This heating step is performed by heating the glass at a temperature of about 450 to 700 degrees (generally 600 degrees), which is lower than the heat-resistant temperature of glass, for about 6 to 96 hours, and the amorphous silicon provided on the glass substrate. The process of crystallizing a semiconductor film.

In FIG. 5, 21 is a vacuum chamber, 2
Reference numeral 2 is a quartz window for irradiating a laser from the outside of the vacuum chamber 21 (particularly, anhydrous silica is preferable in the case of an excimer laser), 23 is a laser beam when the laser is irradiated, 24 is a sample (sample), Reference numeral 25 is a sample holder, 26 is a heater for heating a sample, 27 is an exhaust system, 28 is a system for introducing a raw material gas, an inert gas, and a carrier gas. A plurality of them are provided. In addition, the exhaust system uses a rotary pump for low vacuum and a turbo molecular pump for high vacuum to check impurities (especially oxygen) in the chamber.
We made an effort to minimize the residual concentration of. Regarding the exhaust capacity, 10 ^-6 torr or less, preferably 10 ^-8 torr
r or less.

After crystallization by an excimer laser using the vacuum chamber shown in FIG. 5, a SiO ₂ film 14 serving as a gate insulating film is formed to a thickness of 100 nm by using the RF sputtering method, and the shape shown in FIG. 2 is obtained. Then, an amorphous silicon semiconductor layer or a polycrystalline silicon semiconductor layer (thickness 15
(0 nm) was provided by adding P (phosphorus) to make it an N-type conductivity type. After that, a gate region was formed by patterning to obtain the shape shown in FIG. Other than this, a metal material such as aluminum, chromium, or tantalum may be used as the gate electrode. Further, when aluminum or tantalum is used, if the surface thereof is anodized, the gate electrode will not be damaged during subsequent laser irradiation. Planar type T with anodization on the gate electrode
Regarding FT, Japanese Patent Application No. 3-237100 or 3
-238713, it will not be described in detail here.

Here, doping of impurities by laser light is performed again using the apparatus shown in FIG. In the apparatus shown in FIG. 5, a sample (having the shape shown in FIG. 3) is heated in a PH ₃ atmosphere and irradiated with laser light to emit P (phosphorus).
Was doped. At this time, the source and drain regions (131 and 133 shown in FIG. 4) are doped with P, so that they become N-type. On the other hand, in the channel formation region (132 shown in FIG. 4), the gate insulating film 14 and the gate electrode 1 are formed.
Since 5 serves as a mask and the laser is not irradiated and the temperature of that portion does not rise, doping is not performed. The doping conditions are as follows. Atmosphere PH ₃ 5% concentration (H ₂ dilution) Sample temperature 350 degrees Pressure 0.02 to 1.00 Torr Laser KrF excimer laser (wavelength 248 nm) Energy density 150 to 350 mJ / cm ² Number of pulses 10 shots

After the formation of the source and drain regions described above, FIG.
As shown in FIG.
The O ₂ film 16 was formed to a thickness of 100 nm. The film forming conditions are the same as the method for forming the gate oxide film.

After that, patterning is performed by forming holes for contacts, aluminum is further vapor-deposited to form a source electrode 17 and a drain electrode 18, and hydrogen thermal annealing is performed at a temperature of 350 ° C. in a hydrogen atmosphere. Then, the NTFT was completed. Similarly, change the atmosphere to B ₂
By setting to H ₆ , a P-channel TFT (PTF
T) could also be formed.

In particular, in order to compare the effects of this example , the sample was not heated during laser irradiation, but was irradiated with a laser having exactly the same intensity. However, as shown in FIG. 9B, when the sample was not heated. In addition, the impurity concentration was lower by one digit or more, and the distribution of impurities was limited to the vicinity of the surface. On the other hand, in the present example, in the case where the sample was heated to 350 ° C. and laser-irradiated, as shown in FIG. 9A, the doping concentration of the impurity was high, and the diffusion thereof was deep.

Example 2 This example is an example in which a doping method using a laser beam is applied to the production of an NTFT provided on a glass substrate. In this example, as in Example 1, a glass substrate or a quartz substrate was used as the substrate. First, as in Example 1, a SiO ₂ film or a silicon nitride film was formed on the glass substrate 11 which is the substrate of FIG.
Form as 2.

Next, the intrinsic or substantially intrinsic hydrogenated amorphous silicon semiconductor layer 13 is formed by plasma CVD method.
It is formed to a thickness of 00 nm. Next, device isolation patterning was performed to obtain the shape shown in FIG. Then, the sample was heated in vacuum (10 ⁻⁶ Torr or less) at 450 ° C. for 1 hour to thoroughly perform dehydrogenation to generate dangling bonds in the film at high density.

Further, excimer laser irradiation was carried out while maintaining a vacuum state in the chamber where hydrogen was discharged, and polycrystallization of the sample was carried out under the same conditions as in Example 1. After the laser irradiation, the temperature was lowered to 100 degrees in a hydrogen depressurized atmosphere (about 1 Torr).

In this embodiment, the same vacuum chamber is used for the heating step for hydrogen desorption of the sample, the crystallization by irradiation of excimer laser light, and the impurity doping step using the apparatus shown in FIG. went.
By using such a vacuum chamber, a vacuum state can be easily maintained from the heating step to the crystallization step by laser irradiation, and a film in which impurities (especially oxygen) are not mixed can be obtained. This vacuum chamber is equipped with electrodes for applying electromagnetic energy to the atmosphere and also serves as a PCVD device. However, it goes without saying that each successive step may be carried out in a separate reaction furnace by using an apparatus configured as a multi-chamber type. The reactor shown in FIG. 6 has a positive column type configuration, but other types may be used and the way of applying electromagnetic energy is not particularly limited. Also, if you want to obtain a particularly high activation rate,
It is useful to use an ECR type device.

In FIG. 6, 31 is a vacuum chamber, 3
2 is a quartz window for irradiating a laser from the outside of the vacuum chamber 31, 33 is a laser beam when the laser is irradiated, 34 is a sample (sample), 35 is a sample holder, 36 is a heater for heating the sample, 37 Is an exhaust system, and 38 is a system for introducing a raw material gas, an inert gas, and a carrier gas. Although only one is shown in the drawing, a plurality of systems are actually provided. As the exhaust system, a rotary pump for low vacuum and a turbo molecular pump for high vacuum were used, and efforts were made to minimize the residual concentration of impurities (particularly oxygen) in the chamber. And 39
Is a parallel plate electrode and supplies the electromagnetic energy of 13.56 MHz supplied from the high frequency oscillator 40 into the chamber.

After performing crystallization by an excimer laser using the vacuum chamber of FIG. 6, a SiO ₂ film 14 serving as a gate insulating film was formed to a thickness of 100 nm by RF sputtering to obtain the shape shown in FIG. Then, an amorphous silicon semiconductor layer or a polycrystalline silicon semiconductor layer (thickness 15
(0 nm) was provided by adding P (phosphorus) to make it an N-type conductivity type. After that, a gate region was formed by patterning to obtain the shape shown in FIG.

[0056] Here, doping is performed impurities by Les chromatography <br/> Heather light using the apparatus shown in FIG. 6 again. In the device shown in FIG. 6, PH which has been decomposed by applying electromagnetic energy
_A sample (having the shape shown in FIG. 3) was heated under ₃ atmospheres and irradiated with laser light to dope P (phosphorus). At this time, the source and drain regions (13 shown in FIG.
1, 133) is doped with P and thus becomes N-type. On the other hand, the channel formation region (13 shown in FIG.
In 2), since the gate insulating film 14 and the gate electrode 15 serve as a mask and are not irradiated with laser and the temperature of the portion does not rise, doping is not performed. The doping conditions are as follows. Atmosphere PH ₃ 5% concentration (H ₂ dilution) Sample temperature 350 degrees Pressure 0.02 to 1.00 Torr Input power 50 to 200 W Laser KrF excimer laser (wavelength 248 nm) Energy density 150 to 350 mJ / cm ² Number of pulses 10 shots

After forming the source and drain regions, as in the first embodiment, as shown in FIG. 4, a SiO ₂ film 16 having a thickness of 100 nm is formed as an insulating film by an RF sputtering method to form a contact film. Do hole patterning,
Further, aluminum serving as an electrode is vapor-deposited to form the source electrode 17 and the drain electrode 18, and further hydrogen thermal annealing is performed at a temperature of 350 ° C. in a hydrogen atmosphere.
Completed NTFT.

In this doping process, the atmosphere is set to B.
_{By using 2} H ₆ , P-channel TFT (PTF
T) could be formed. In the past, the degree of decomposition of the doping gas was different depending on the wavelength of the laser light, and the non-uniformity of doping due to this was a problem.However, in the case of the configuration of the present embodiment , it is not the laser light but the electromagnetic wave. Since the doping gas is decomposed by the energy, the doping can be carried out regardless of the wavelength of the laser beam in both PTFT and NTFT.

[Embodiment 3] FIG. 7 shows a state of a doping treatment apparatus of this embodiment . That is, the chamber 7
1 is provided with a slit-shaped window 72 made of anhydrous silica glass. The laser light is shaped into an elongated shape according to this window. The beam 73 of the laser is, for example, 10
The rectangle was mm × 300 mm. The position of the laser light is fixed. An exhaust system 77 and a gas system 78 for introducing a reactive gas are connected to the chamber. A sample holder 75 is provided in the chamber, a sample 74 is placed on the sample holder 75, and an infrared lamp (functions as a heater) 76 is provided under the sample holder.
Is provided. The sample holder is movable, and the sample can be moved according to the shot of the laser.

As described above, when the mechanism for moving the sample is incorporated in the chamber, the thermal expansion of the sample holder by the heater causes an error, so that the temperature control requires extreme caution. . Further, since the sample transfer mechanism causes dust, maintenance inside the chamber is troublesome.

Example 4 A book is shown in FIG.Exampleof
The state of the doping treatment apparatus is shown. Ie the chamber
-81 is provided with a window 82 made of anhydrous silica glass.
It Unlike the case of the third embodiment, this window covers the entire surface of the sample 84.
It is wide enough to cover. Exhaust system 8 in the chamber
7 and a gas system 88 for introducing a reactive gas.
Has been continued. In addition, the sample holder 8 is installed in the chamber.
5 is provided, on which the sample 84 is placed,
Ruder has a built-in heater. The sample holder is
It is fixed to the chamber. At the bottom of the chamber
Pulse table of the laser
By moving the chamber according to
Next, laser irradiation is performed. Laser beam83
Is an elongated shape as in the case of the third embodiment. example
For example, the rectangle is 5 mm × 100 mm. Same as Example 3
Like, the position of the laser light is fixed. In this example
Differs from the third embodiment by adopting a mechanism for moving the chamber.
To use. Therefore, there is a mechanical part in the chamber.
Maintenance is easy because no dust is generated.
It Also, the transfer mechanism may be affected by the heat of the heater.
Is not.

The present embodiment is superior to the third embodiment not only in the above points but also in the following points. That is, in the method of Example 3, laser radiation could not be performed after the sample was placed in the chamber until it was evacuated to a sufficient degree of vacuum. That is, there was a lot of dead time. However, in this embodiment, FIG.
If a large number of such chambers are prepared and rotated in sequence, such as sample loading, vacuum evacuation, laser irradiation, and sample removal, the above dead time does not occur. Such a system is shown in FIG. 8 (B).

That is, the chambers 97 and 96 containing the unprocessed sample are continuously transferred during the exhaust process.
8 heads to a mount 99 having a stage capable of precise movement. In the chamber 95 on the stage,
A suitable optical device 92 emitted from a laser device 91,
The laser light processed in 93 is applied to the sample inside through the window. By moving the stage, the chamber 94 to which the necessary laser irradiation has been performed is again sent to the next stage by the continuous transfer mechanism 100, during which the heater in the chamber is turned off, exhausted, and kept at a sufficient temperature. After lowering, the sample is taken out.

As described above, in the present embodiment, the continuous processing can be performed, so that the exhaust waiting time can be reduced and the throughput can be improved. of course,
Although the throughput is improved in the case of the present embodiment, a larger number of chambers is required than that in the case of the third embodiment, so that the mass production scale and the investment scale should be taken into consideration.

[Embodiment 5] This embodiment is an example in which the doping method having the constitution of the present invention is applied to the production of an NTFT provided on a glass substrate. In this example, as in Example 1, a glass substrate or a quartz substrate was used as the substrate. First, similarly to Example 1, a SiO ₂ film was formed as a base protective film 102 on a glass substrate 101 is a substrate of FIG. 1 0, then substantially intrinsic hydrogenated amorphous silicon by plasma CVD The semiconductor layer 103 is formed to have a thickness of 100 nm. Next, device isolation patterning was performed. Then, the sample is placed in a vacuum (10 ⁻⁶ Torr or less) for 45 minutes.
Hydrogen was thoroughly discharged by heating at 0 ° C. for 1 hour to form dangling bonds in the film at high density. Then R
A SiO ₂ film 104 having a thickness of 100 nm was formed by using the F sputtering method to obtain the shape shown in FIG. Then, the silicon oxide mask 105 was left only on the channel portion.

Here, the laser treatment of the present embodiment shown in FIG.
Performing doping of impurities by laser light using a physical device. In the laser processing apparatus shown in FIG. 6, a sample (having the shape of FIG. 10B) is heated in a PH ₃ atmosphere to which electromagnetic energy is applied and decomposed, and a laser beam is irradiated to P ( Phosphorus) was doped. At this time, the source and drain regions (106 and 108 shown in the figure)
Since it is doped with P, it becomes N-type. On the other hand, in the channel formation region (107 shown in the figure), the silicon oxide mask 105 serves as a mask and is irradiated with laser to be crystallized, but doping is not performed because a mask material exists. That is, in this step, crystallization by laser and doping are simultaneously performed. The conditions at this time were the same as in Example 2.

After forming the source and drain regions, a gate oxide film 110 and a gate electrode 109 are formed, and further,
A SiO ₂ film 111 having a thickness of 100 nm is formed as an interlayer insulating film, and a contact hole is patterned.
Further, aluminum serving as an electrode is vapor-deposited to form a source electrode 112 and a drain electrode 113, and further, thermal annealing of hydrogen is performed at a temperature of 350 ° C. in a hydrogen atmosphere to form an NTFT as shown in FIG. completed.

In this embodiment, the source and drain cannot be formed in a self-aligned manner, but for example, as in the first embodiment, a gate electrode is formed on the gate insulating film,
If laser irradiation is performed from the back surface, crystallization of the channel region and doping of the source and drain can be performed at the same time, as in this embodiment.

Example 6 FIG. 11 shows an example in which an active matrix is formed on a Corning 7059 glass substrate. As shown in FIG. 11A, a Corning 7059 glass substrate (thickness: 1.1 mm, 30
0 × 400 mm) was used. A thickness of 5 to 50 n is formed on the entire surface by plasma CVD so that impurities such as sodium contained in Corning 7059 glass do not diffuse into the TFT.
A silicon nitride film 202 having a thickness of m, preferably 5 to 20 nm was formed. As described above, a technique of coating a substrate with a film of silicon nitride or aluminum oxide and using this as a blocking layer is a patent application by the present inventors, which is Japanese Patent Application No. 3-238.
710 and 3-238714.

Then, after forming the base oxide film 203 (silicon oxide), the silicon film 204 (thickness 30 to 150 nm, preferably 3 nm) is formed by the LPCVD method or the plasma CVD method.
0 to 50 nm), and a silicon oxide gate insulating film (thickness: 7) is formed by a plasma CVD method in an oxygen atmosphere using tetra-ethoxy-silane (TEOS) as a raw material.
205 from 0 to 120 nm, typically 100 nm). The substrate temperature was set to 400 ° C. or lower, preferably 200 to 350 ° C. in order to prevent the glass from shrinking or warping. However, at such a substrate temperature, a large amount of recombination centers exist in the oxide film, and for example, the interface state density is 10
It was at a level of ¹² cm ^-2 or more and could not be used as a gate insulating film.

Then, as shown in FIG. 11 (A), KrF laser light is irradiated in hydrogen-diluted phosphine PH ₃ (5%) to improve the crystallinity of the silicon film 204 and, at the same time, to form the gate oxide film. 205 recombination centers (trap centers) were reduced. At this time, the energy density of the laser light was 200 to 300 mJ / cm ² . Also, the number of shots was 10 times. This is,
The temperature may be maintained at 200 to 400 ° C, typically 300 ° C. As a result, the crystallinity of the silicon film 204 is improved, and 1 × 10 ^{20 to} 3 is contained in the gate oxide film 205.
The phosphorus was doped at × 10 ²⁰ cm ^-3 , and the interface state density was also reduced to 10 ¹¹ cm ^-2 or less.

Next, as shown in FIG. 11B, an aluminum gate electrode 206 was formed, and the periphery thereof was covered with an anodic oxide 207.

Thereafter, as a P-type impurity, boron is implanted in the silicon layer in a self-aligned manner by an ion doping method, and T
Source / drain 208 and 209 of FT are formed, and further, as shown in FIG. 11C, a KrF laser beam is irradiated onto the source / drain 208, and the crystallinity of the silicon film whose crystallinity is deteriorated due to this ion doping is formed. Was improved. But,
At this time, the energy density of the laser light is 250 to 3
It was set to a high value of 00 mJ / cm ² . Therefore, this T
FT source / drain sheet resistance is 300-800
Became Ω / □.

Thereafter, as shown in FIG. 11D, an interlayer insulator 210 was formed of polyimide, and a pixel electrode 211 was formed of ITO. And FIG.
As shown in FIG. 1 (E), a contact hole is formed,
Chromium electrode 212 on the source / drain region of the TFT,
213 was formed, and one of the electrodes 213 was also connected to ITO. Finally, 2 at 300 ° C in hydrogen
It was annealed for a period of time to complete the hydrogenation of silicon, and a pixel of a liquid crystal display device was manufactured.

[Seventh Embodiment] FIG. 11 shows an example in which a silicon oxide film is doped with phosphorus and a TFT is formed by using this as a gate insulating film as in the sixth embodiment. Similar to Example 6, FIG.
Plasma CV is formed on the entire surface of the substrate 201 as shown in FIG.
A silicon nitride film 202 having a thickness of 5 to 50 nm, preferably 5 to 20 nm was formed by the D method. Next, the underlying oxide film 203
After (silicon oxide) is formed, the silicon film 204 (thickness: 30 to 150 n) is formed by the LPCVD method or the plasma CVD method.
m, preferably 30 to 50 nm) and a silicon oxide film (thickness 70 to 120 nm, typically 100 nm) 205 was formed by a sputtering method. This step is the same as in Example 6 except that tetra ethoxy silane (TEO) is used.
S) may be used as a raw material and may be performed by a plasma CVD method in an oxygen atmosphere. The substrate temperature is 400 ° C. or lower, preferably 200 to 400 ° C. in order to prevent the glass from shrinking or warping.
It was set to 350 ° C.

Then, as shown in FIG. 11A, KrF laser light is irradiated in hydrogen-diluted phosphine PH ₃ (5%) to improve the crystallinity of the silicon film 204, and at the same time, to form the gate oxide film. 205 recombination centers (trap centers) were reduced. At this time, the energy density of the laser light was 200 to 300 mJ / cm ² . Also, the number of shots was 10 times. The substrate temperature was room temperature. Therefore, the doping of phosphorus was limited to a portion of 70% or less from the surface of the silicon oxide film.

Next, to form the gate electrode 206 of aluminum, as shown in FIG. 11 (B), was coated around with an anodic oxide 20 9. After the anodization process is completed,
On the contrary, a negative voltage was applied. For example, -100 to -200V
Was applied for 0.1 to 5 hours. The substrate temperature is preferably 100 to 250 ° C, typically 150 ° C. By this step, mobile ions in the silicon oxide or at the interface between the silicon oxide and the silicon are attracted to the gate electrode (Al), and a region having a high phosphorus concentration in the middle (presumed to be phosphorus vitrified) is present. Was trapped in.
As described above, the technique of applying a negative voltage to the gate electrode after or during the anodic oxidation is described in Japanese Patent Application No. 4-115503 (filed on Apr. 7, 2014) filed by the present applicant . .

After that, phosphorus as N-type impurities is self-alignedly injected into the silicon layer by a known ion doping method to form the source / drain 208 and 209 of the TFT, and further shown in FIG. Like this, KrF
Laser light was irradiated to improve the crystallinity of the silicon film whose crystallinity was deteriorated due to this ion doping.
After that, as illustrated in FIG. 11D, an interlayer insulator 210 is formed using polyimide, and the pixel electrode 211 is further formed.
Was formed of ITO. Then, as shown in FIG. 11E, contact holes are formed, and electrodes 212 and 213 are formed of chromium in the source / drain regions of the TFT, and one of these electrodes 213 is also connected to ITO. did. Finally, annealing was carried out in hydrogen at 300 ° C. for 2 hours to complete hydrogenation of silicon, and a TFT was manufactured.

[Embodiment 8] In the present embodiment, a silicon oxide film is formed on a single crystal substrate, laser doping of phosphorus is performed on the silicon oxide film, and a MOS capacitor using this as a gate oxide film is manufactured. CV characteristics) were measured.

Tetra.
A gate insulating film of silicon oxide (thickness 70 to 120 nm, typically 100 nm) by plasma CVD method in an oxygen atmosphere using ethoxy silane (TEOS) as a raw material.
Was formed. Substrate temperature is 400 ° C or lower, preferably 20
It was set to 0 to 350 ° C. However, at such a substrate temperature, a large number of carbon-containing clusters are present in the oxide film and a large amount of recombination centers are present. For example, the interface state density is 10 ¹² cm ⁻² or more, It was a level that could not be used as an insulating film.

Therefore, using the apparatus used in Example 1, KrF was diluted in hydrogen diluted phosphine PH ₃ (5%).
Irradiation with laser light reduced the recombination centers (trap centers) of the silicon oxide film. At this time, the energy density of the laser light is 200 to 300 mJ / cm ^2.
And Also, the number of shots was 10 times. The temperature is preferably 200 to 400 ° C., typically 300 ° C. As a result, in the oxide film, 1 × 10 ^{20 to} 3 ×
It is doped with 10 ²⁰ cm ^-3 of phosphorus and has an interface state density of 1
It was reduced to less than 0 ¹¹ cm ^-2 . Next, an aluminum gate electrode was formed.

For example, if the laser doping process is not performed, the CV characteristic of the obtained MOS capacitor is shown in FIG.
2 (A) has a large hysteresis. Here, the horizontal axis represents voltage and the vertical axis represents capacitance. However, the laser doping treatment as in this embodiment has resulted in good CV characteristics as shown in FIG.

The distribution of each element in the film at this time is shown in FIG.
As shown in (C). That is, phosphorus was doped to the middle of the silicon oxide film by the laser doping of this example. From this, it is understood that the sodium element is gettered by this phosphorus. Also, carbon was present in a very small amount in all regions of the oxide film because it was released outside the film by laser irradiation. Also in this embodiment, when a negative voltage is applied to the gate electrode (Al) as in the case of the seventh embodiment, mobile ions such as sodium existing in the film are positively attracted to the region containing a large amount of phosphorus. Further effects can be obtained.

As described in the above embodiment , the semiconductor is irradiated with laser light in a state where the sample is heated or in an atmosphere containing impurities imparting one conductivity type decomposed by applying electromagnetic energy to the reactive gas. By doing so, it was possible to efficiently dope the semiconductor with the impurity imparting the one conductivity type. In particular,
It was possible to obtain the effect that doping can be performed without causing thermal damage to the glass substrate and without being affected by the wavelength of laser light or the type of doping gas.

[0085]

As described above, the laser of the present invention is used.
Processor, not only objective their limited doped into the semiconductor, modification or the surface of the metal material or a ceramic material, a metal thin film, a ceramic film, a wide range such as would leave the addition of trace elements to the insulator thin film It is an industrially useful invention that can be used for the purpose. Furthermore, according to the present invention,
The machine part inside the chamber
Since there is no minute portion and dust etc. does not occur, maintenance
Is easy. In addition, the transfer mechanism is located outside the chamber.
Therefore, the heat of the heater does not hit directly, so the shadow of the heat
It is rarely affected. According to the present invention, a plurality of
A number of chambers are prepared, and each of them is sequentially loaded with sample and vacuumed.
Exhaust, laser irradiation, sample removal, etc.
And transport it in the chamber.
Turn off the light, exhaust the gas, lower the temperature, remove the sample, etc.
There is no such dead time. According to the invention, continuous
By performing various types of processing, you can reduce the waiting time for exhaust.
The throughput can be improved.

[Brief description of drawings]

FIG. 1 shows a manufacturing process of an example.

FIG. 2 shows a manufacturing process of an example.

FIG. 3 shows a manufacturing process of an example.

FIG. 4 shows a manufacturing process of an example.

[5] Laser processing examples (impurity doping)
The conceptual diagram of an apparatus is shown.

FIG. 6 is a laser process of the embodiment (impurity doping).
The conceptual diagram of an apparatus is shown.

FIG. 7: Laser processing of example (impurity doping)
An example of the device is shown.

FIG. 8 shows an example of a laser processing apparatus according to an embodiment.

FIG. 9 shows a depth distribution of impurity concentration in a semiconductor impurity region manufactured by an example and a conventional method .

FIG. 10 shows a manufacturing process of an example.

FIG. 11 shows a manufacturing process of an example.

FIG. 12 shows CV characteristics and element distribution of an example.

[Explanation of symbols]

21 vacuum chamber 22 Quartz window 23 Laser light 24 samples 25 sample holder 26 heater 27 Exhaust system 28 Gas introduction system

Front Page Continuation (56) References JP-A-1-101625 (JP, A) JP-A-54-131866 (JP, A) JP-A-56-30721 (JP, A) JP-A-57-162339 (JP , A) JP 2-226732 (JP, A) JP 2-222545 (JP, A) JP 2-224339 (JP, A) JP 64-11323 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/22 H01L 21/268

Claims (10)

(57) [Claims] 1. A plurality of chambers, each of which has a laser device, a window for allowing a laser beam emitted from the laser device to enter the interior, and a holder for placing an object to be processed therein; A laser processing apparatus comprising: a transfer means capable of transferring, and a movable stage on which one of the chambers is placed, wherein the plurality of chambers are sequentially transferred to the stage by the transfer means. A laser processing apparatus which irradiates a processing object placed on the holder with a laser beam incident through the window into the chamber while moving the chamber. 2. A plurality of chambers provided with a laser device, a window for allowing a laser beam emitted from the laser device to enter the interior, and a holder for placing an object to be processed therein, one of the chambers A movable stage on which the chamber is placed, a plurality of the chambers that can be transported, a transport unit that transports the chambers onto the stage, a plurality of the chambers that are transportable, and a chamber placed on the stage. A transfer means for moving from the stage, and a laser beam incident through the window into the chamber while moving a chamber placed on the stage to an object placed on the holder. Laser processing device characterized by irradiation. 3. A laser device, an optical device for making the cross section of the laser light emitted from the laser device into an elongated rectangular shape, a window for making the laser light passing through the optical device incident inside, A laser processing apparatus comprising: a plurality of chambers each provided with a holder for placing an object to be processed; a transfer means capable of transferring the plurality of chambers; and a movable stage on which one chamber is placed. Then, each of the chambers is sequentially transported to the stage by the transport means, and while moving the chamber placed on the stage, the laser light incident through the window into the chamber is delivered to the holder. A laser processing device, which irradiates a placed object. 4. A laser device, an optical device for making a cross section of laser light emitted from the laser device into an elongated rectangular shape, a window for making the laser light passing through the optical device incident inside, A plurality of chambers provided with a holder for placing an object to be processed, a movable stage in which one of the chambers is placed, a plurality of the chambers can be transported, and a transport for transporting the chambers to the stage A means for transporting a plurality of the chambers, a transport means for moving the chamber on the stage from the stage, and a window for moving the chamber placed on the stage while moving the chamber on the stage. A laser processing apparatus, which irradiates an object to be processed placed on the holder with laser light incident through the laser. 5. A plurality of the chambers, the laser processing apparatus according to any one of claims 1 to 4, characterized in that a heating means for heating the object to be processed is provided . Wherein a plurality of said chambers, laser treatment apparatus according to any one of claims 1 to 5, characterized in that capable of independently evacuated. 7. plurality of said chambers independently of the laser processing apparatus according to any one of claims 1 to 6, characterized that it is possible to introduce a gas. Wherein said laser device, a laser processing apparatus according to any one of claims 1 to 7, characterized in that a laser device that emits a pulsed laser beam. Wherein said laser device, a laser processing apparatus according to any one of claims 1 to 8, characterized in that an excimer laser device. 10. An electromagnetic energy source is provided in the plurality of chambers.
An electrode is provided to give the atmosphere to the atmosphere
The method according to any one of claims 1 to 9, characterized by
On-board laser processing equipment.