JP3231816B2 - Electrode manufacturing method for electroluminescent device - Google Patents

Electrode manufacturing method for electroluminescent device

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Publication number
JP3231816B2
JP3231816B2 JP28725791A JP28725791A JP3231816B2 JP 3231816 B2 JP3231816 B2 JP 3231816B2 JP 28725791 A JP28725791 A JP 28725791A JP 28725791 A JP28725791 A JP 28725791A JP 3231816 B2 JP3231816 B2 JP 3231816B2
Authority
JP
Japan
Prior art keywords
electrode
layer
transport layer
metal
electroluminescent device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28725791A
Other languages
Japanese (ja)
Other versions
JPH05101890A (en
Inventor
正俊 中山
正典 柴原
賢司 中谷
鉄司 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
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Filing date
Publication date
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Priority to JP28725791A priority Critical patent/JP3231816B2/en
Publication of JPH05101890A publication Critical patent/JPH05101890A/en
Application granted granted Critical
Publication of JP3231816B2 publication Critical patent/JP3231816B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は有機電界発光素子の電極
を作製する方法に関し、より詳しくは電極を形成する基
体に対して結合性の良い有機電界発光素子の電極を作製
する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating an electrode of an organic electroluminescent device, and more particularly to a method for fabricating an electrode of an organic electroluminescent device having good bonding to a substrate on which the electrode is formed.

【0002】[0002]

【従来の技術】有機電界発光素子は、基本的には有機発
光層を正負電極で挟んだ形を有する。正負電極からキャ
リアーとして注入された電子と正孔が再結合する際に形
成される励起子(エキシトン)が励起状態から基底状態
に戻る時に発光を生じさせる。また、輝度を向上させる
ために更に正電極と有機発光層の間に正孔輸送層を介在
させ、あるいは負電極と有機発光層の間に電子輸送層を
介在さることも知られている(特開昭63−26469
2号、特開昭63−295695号、特開平2−250
292号、J.J.Appl.Phys.,27,L2
69(1988)等)。すなわち、図1に示した様にガ
ラス基板1、透明正電極2、正孔輸送層3、有機発光層
4、電子輸送層5及び負電極6をこの順に積層する。そ
して直流電源7から電圧を加えて発光させる。もちろ
ん、電子輸送層及び正孔輸送層の一方又は両方が省略さ
れることもある。また、電子輸送層や正孔輸送層には有
機化合物だけでなく無機化合物を用いてもよい。
2. Description of the Related Art An organic electroluminescent device basically has a shape in which an organic light emitting layer is sandwiched between positive and negative electrodes. Excitons (excitons) formed when electrons and holes injected as carriers from the positive and negative electrodes are recombined emit light when returning from the excited state to the ground state. It is also known that a hole transport layer is further interposed between the positive electrode and the organic light emitting layer, or an electron transport layer is interposed between the negative electrode and the organic light emitting layer in order to improve the luminance (particularly). 63-46969
No. 2, JP-A-63-295695, JP-A-2-250
No. 292, J.I. J. Appl. Phys. , 27, L2
69 (1988)). That is, as shown in FIG. 1, the glass substrate 1, the transparent positive electrode 2, the hole transport layer 3, the organic light emitting layer 4, the electron transport layer 5, and the negative electrode 6 are laminated in this order. Then, a voltage is applied from the DC power supply 7 to emit light. Of course, one or both of the electron transport layer and the hole transport layer may be omitted. Further, not only organic compounds but also inorganic compounds may be used for the electron transporting layer and the hole transporting layer.

【0003】[0003]

【発明が解決すべき課題】有機発光層、正孔輸送層、又
は電子輸送層は水分、酸素、その他の使用環境中のある
種の分子の影響を受けて劣化し易いので、外気から完全
に遮断する必要がある。図1に示したように、有機発光
層、正孔輸送層又は電子輸送層には電極が積層されてい
るから、電極のこれらの層に対する密着性、又は結合性
が低いと経時的に結合力が緩くなり、あるいは剥離し、
そこから水分や酸素が侵入して、正孔輸送層、有機発光
層、又は電子輸送層の劣化が生じて輝度、色彩等の発光
特性が低下する。一般的に、有機発光層、正孔輸送層、
又は電子輸送層に対する金属電極の密着性は悪く、経時
的に結合の緩みあるいは剥離が起こり易い。従って本発
明の目的は、有機電界発光素子において、有機発光層、
正孔輸送層、又は電子輸送層に対する正又は負電極の結
合力を向上させ、それにより発光素子の耐久性を向上さ
せ、発光特性を安定化することにある。
The organic light emitting layer, the hole transporting layer, or the electron transporting layer is easily degraded under the influence of moisture, oxygen, and certain kinds of molecules in the use environment. Need to shut off. As shown in FIG. 1, since electrodes are laminated on the organic light emitting layer, the hole transport layer, or the electron transport layer, if the electrode has low adhesion or bonding property to these layers, the bonding force with time will increase. Becomes loose or peels off,
Moisture and oxygen enter from there, and the hole transport layer, the organic light emitting layer, or the electron transport layer is deteriorated, and the light emission characteristics such as luminance and color are reduced. Generally, an organic light emitting layer, a hole transport layer,
Alternatively, the adhesion of the metal electrode to the electron transport layer is poor, and loosening or peeling of the bond is likely to occur over time. Therefore, an object of the present invention is to provide an organic electroluminescent device, an organic light-emitting layer,
An object of the present invention is to improve the bonding force of a positive or negative electrode to a hole transport layer or an electron transport layer, thereby improving the durability of a light emitting device and stabilizing light emitting characteristics.

【0004】[0004]

【課題を解決するための手段】本発明は、有機電界発光
素子の電極を作製する方法において、有機発光層、正孔
輸送層又は電子輸送層である基体層とその表面側に配置
したグリッド電極例えば金属メッシュとを、共に負電位
にバイアスしておき、電極を形成すべき金属をイオン化
し、これを前記負電位により加速して、前記基体層上に
成膜する方法において、前記基体層の表面をプラズマ又
は逆スパッタした後、空気に露呈することなく引き続い
て前記基体層の表面に電極を気相成膜する。本発明によ
ると、電極との結合力が大きく、水分や酸素が電子輸送
層、有機発光層又は正孔輸送層に侵入することがなく、
電極が優れた遮蔽層として作用する。
According to the present invention, there is provided a method for manufacturing an electrode of an organic electroluminescent device, comprising a substrate layer which is an organic light emitting layer, a hole transport layer or an electron transport layer, and a grid electrode arranged on the surface side thereof. for example a metal mesh, leave biased together negative potential, ionized metal to form the electrodes, which was accelerated by the negative potential, a method of forming a film on the substrate layer, the base layer After the surface is subjected to plasma or reverse sputtering, an electrode is subsequently formed on the surface of the base layer in a vapor phase without being exposed to air . According to the present invention, the bonding force with the electrode is large, moisture and oxygen do not enter the electron transporting layer, the organic light emitting layer or the hole transporting layer,
The electrode acts as an excellent shielding layer.

【0005】図2は本発明の1実施例を示す図であり、
ガラス基板1の表面に透明正電極2、正孔輸送層3、有
機発光層4、電子輸送層5を順に従来の方法により形成
した後、負電極6を形成する。
FIG. 2 shows an embodiment of the present invention.
After a transparent positive electrode 2, a hole transport layer 3, an organic light emitting layer 4, and an electron transport layer 5 are sequentially formed on the surface of a glass substrate 1 by a conventional method, a negative electrode 6 is formed.

【0006】処理としてプラズマ処理を行う。この場
合には、公知の電極成膜装置の内部にこの積層体を収容
し、電子輸送層5または電子輸送層がない場合には有機
発光層4を所定の負電源8に接続する。しかしこれらの
層の導電性は充分でないから更にメッシュ状グリッド9
を層5(または層5がない場合には層4)に近接させて
配置し、同じ負電位にする。グリッド9と基体層との距
離は数mmが好ましく、又電位は例えば約−150ボル
ト以下〜−10kV程度の負電位を加える。使用するプ
ラズマガスとしてはHe、Ar、Ne、Xe等の不活性
ガスや、水素、窒素等のガスをプラズマ化する。プラズ
マガス中の正イオンがグリッド9に印加された負電位に
より加速されて有機発光層または電子輸送層の表面を活
性化することにより、次に形成される電極との結合力を
向上させる。プラズマ処理の代わりに図2と同じ配置で
周知の逆スパッタ法により基体の表面を活性化しても良
い。又、正孔輸送層を形成して最後に正電極を形成する
こともあるから、本発明はこのような場合も含む。
[0006] The plasma treatment is carried out as a pre-treatment. In this case, the laminate is accommodated inside a known electrode film forming apparatus, and the organic light emitting layer 4 is connected to a predetermined negative power supply 8 when the electron transport layer 5 or the electron transport layer is not provided. However, since the conductivity of these layers is not sufficient, the mesh grid 9
Is placed close to layer 5 (or layer 4 if layer 5 is absent) and is at the same negative potential. The distance between the grid 9 and the base layer is preferably several mm, and a negative potential of, for example, about -150 volts or less to about -10 kV is applied. As a plasma gas to be used, an inert gas such as He, Ar, Ne, or Xe, or a gas such as hydrogen or nitrogen is turned into plasma. Positive ions in the plasma gas are accelerated by the negative potential applied to the grid 9 to activate the surface of the organic light emitting layer or the electron transport layer, thereby improving the bonding force with the electrode to be formed next. Instead of the plasma treatment, the surface of the base may be activated by a well-known reverse sputtering method in the same arrangement as in FIG. The present invention also includes such a case, since a positive electrode may be formed last after forming a hole transport layer.

【0007】プラズマまたは逆スパッタによる表面処理
が終ると、引き続いて同じ真空中で負電極6を成膜す
る。負電極の材料としては4eV以下の仕事関数を有す
る金属又は少なくとも1種が4eV以下の仕事関数を有
する金属を含有する合金より選択される材料を使用す
る。たとえばMg、Al、及びMg−Ag合金等が使用
出来る。電極の成膜は電極材料をイオン化しておき、上
記の様に−100〜−10kV程度の負電位にしたグリ
ッド及び基体を用い、加速電圧をこの程度に保持しなが
ら、基体に金属を成膜する。なお、透明正電極2、正孔
輸送層3、有機発光層4、電子輸送層5、及び負電極6
の材料は全て公知である。例えば、透明正電極としては
In−Sn酸化物、正孔輸送層としてトリフェニルジア
ミン誘導体、スチルベン誘導体、ピラゾリン誘導体等が
あり、電子輸送層としてはオキサジアゾール誘導体等が
ある。有機発光層としては縮合多環型芳香族炭化水素色
素、O、N、S等のヘテロ原子を含む縮合多環型色素、
金属錯体色素等がある。その例としては、ペリノン誘導
体、キノリン錯体誘導体、チアジアゾロピリジン誘導
体、テトラフェニルブタジエン類、ビススチリルベンゼ
ン誘導体等が挙げられる(特開平1−245087号、
同2−88689号、同2−250292号、同2−2
61889号参照)。
After the surface treatment by plasma or reverse sputtering is completed, the negative electrode 6 is subsequently formed in the same vacuum. As the material of the negative electrode, a material selected from a metal having a work function of 4 eV or less or an alloy containing at least one metal having a work function of 4 eV or less is used. For example, Mg, Al, and Mg-Ag alloy can be used. The electrode is formed by ionizing the electrode material, using a grid and a substrate at a negative potential of about -100 to -10 kV as described above, and depositing a metal on the substrate while maintaining the acceleration voltage at this level. I do. The transparent positive electrode 2, the hole transport layer 3, the organic light emitting layer 4, the electron transport layer 5, and the negative electrode 6
Are all known. For example, the transparent positive electrode includes an In-Sn oxide, the hole transport layer includes a triphenyldiamine derivative, a stilbene derivative, a pyrazoline derivative, and the like, and the electron transport layer includes an oxadiazole derivative. As the organic light-emitting layer, a condensed polycyclic aromatic hydrocarbon dye, a condensed polycyclic dye containing a hetero atom such as O, N, or S;
There are metal complex dyes and the like. Examples thereof include perinone derivatives, quinoline complex derivatives, thiadiazolopyridine derivatives, tetraphenylbutadienes, bisstyrylbenzene derivatives and the like (Japanese Patent Application Laid-Open No. 1-245087,
2-88689, 2-250292, 2-2
No. 61889).

【0008】金属をイオンを形成出来る方法には周知の
各種方法がある。例えば、イオンプレーティング法、R
Fイオンプレーティング法、多陰極法、HCD法、バイ
アスプローブ法、低電圧プラズマ蒸着法、クラスターイ
オンビーム(CIB)法、アークイオンプレーティング
(AIP)法などがあり、適当な方法を選択出来る。本
発明の実施例ではクラスターイオンビーム法(金属蒸気
を閉じた容器内で形成し、細いノズルからクラスタイオ
ンとして噴出させる。例えば応用物理第55巻第8号
(1985)、高木「クラスターイオンビーム技術とそ
の応用」参照)、イオンプレーティング法(金属蒸気に
アーク放電を作用させてイオン化する。例えば実公昭5
9−4050号、特開平1−96367号参照)、RF
イオンプレーティング法(加熱気化した金属に高周波に
より励起された不活性ガスを作用させてイオン化する)
を採用した。
There are various well-known methods for forming ions of a metal. For example, ion plating, R
There are an F ion plating method, a multi-cathode method, an HCD method, a bias probe method, a low voltage plasma deposition method, a cluster ion beam (CIB) method, an arc ion plating (AIP) method and the like, and an appropriate method can be selected. In an embodiment of the present invention, a cluster ion beam method (a metal vapor is formed in a closed container and is ejected as cluster ions from a narrow nozzle. For example, Applied Physics Vol. 55, No. 8 (1985), Takagi, "Cluster Ion Beam Technology" And its application "), ion plating (metal vapor is ionized by the action of an arc discharge.
9-4050, JP-A-1-96367), RF
Ion plating method (Ionization by applying inert gas excited by high frequency to heated and vaporized metal)
It was adopted.

【0009】[0009]

【実施例の説明】以下に実施例を説明する。以下の例で
はガラス基板の面にIn−Sn酸化物電極層を形成し、
次いで正孔輸送層、有機発光層、または電子輸送層を形
成した。ついでこれらの層から6mm離して平行にグリ
ッドを配置し、これらの層とグリッドとには表1、表
2、表3に示す真空度で電流、電圧を加えた。なお左側
の欄は使用可能な一般的な条件、右側は実施例で使用し
た条件である。陽極側は0Vとした。ただし実施例1は
正孔輸送層としてN,N’−ジフェニル−N,N’−ビ
ス(3−メチルフェニル)−1,1’−ビフェニル−
4,4’−ジアミン、電極に隣接する有機発光層として
8−キノリノールAl錯体を用い、実施例2、3は有機
発光層としてスチルベン誘導体
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment will be described below. In the following example, an In-Sn oxide electrode layer is formed on the surface of a glass substrate,
Next, a hole transport layer, an organic light emitting layer, or an electron transport layer was formed. Next, grids were arranged in parallel with each other at a distance of 6 mm from these layers, and currents and voltages were applied to these layers and the grids at the degree of vacuum shown in Tables 1, 2 and 3. The left column shows general conditions that can be used, and the right column shows conditions used in Examples. The anode side was set to 0V. However, in Example 1, N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-biphenyl- was used as the hole transport layer.
In Examples 2 and 3, stilbene derivatives were used as the organic light-emitting layer, using 4,4′-diamine and an 8-quinolinol Al complex as the organic light-emitting layer adjacent to the electrode.

【化1】 を使用し、電極に隣接する電子輸送層としてオキサジア
ゾール誘導体
Embedded image Using an oxadiazole derivative as the electron transport layer adjacent to the electrode

【化2】 を使用した。結果を表4に示す。ただし、ピール試験は
JIS規格K5400に従って、碁盤目状に100個の
ます目を刻み、これらを全て覆う様に粘着テープを貼
り、良く密着させ、塗布面と90度の方向に素早く剥
し、100のます目めに対して残った数を示す。スクラ
ッチ試験はRhesca社製のCSR−02試験機で測
定し、無処理の場合を1.0とした相対値で表わした。
比較のため従来の蒸着法及びスパッタ法による成膜を併
記する。
Embedded image It was used. Table 4 shows the results. However, in the peel test, according to JIS K5400, cut 100 squares in a grid pattern, apply adhesive tape so as to cover them all, adhere well, peel off quickly in the direction of 90 degrees with the coated surface, Indicate the number remaining for the first line. The scratch test was measured with a CSR-02 testing machine manufactured by Rhesca, and was expressed as a relative value with the untreated sample taken as 1.0.
For comparison, a conventional deposition method and a film formation by a sputtering method are also described.

【0010】[0010]

【表1】 [Table 1]

【0011】[0011]

【表2】 [Table 2]

【0012】[0012]

【表3】 [Table 3]

【0013】[0013]

【表4】 [Table 4]

【0014】[0014]

【発明の効果】本発明によるとイオンビームがグリッド
の負電圧によって加速される結果、有機電界発光素子の
基体層に対する電極の密着性が向上するだけでなく、基
体層が前処理を受けることにより活性化される結果密着
性がさらに向上する。このため水分、酸素等の侵入に対
する有機電界発光素子の耐久性が向上し、発光特性が安
定化する。
According to the present invention, the ion beam is accelerated by the negative voltage of the grid, so that not only the adhesion of the electrode to the base layer of the organic electroluminescent device is improved, but also the
Adhesion as a result of body layer being activated by pretreatment
The performance is further improved . For this reason, the durability of the organic electroluminescent element against invasion of moisture, oxygen, and the like is improved, and the light emitting characteristics are stabilized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】有機電界発光素子の構成の1例を示す断面図で
ある。
FIG. 1 is a cross-sectional view illustrating an example of a configuration of an organic electroluminescent device.

【図2】本発明の方法を説明する図である。FIG. 2 is a diagram illustrating a method of the present invention.

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 透明正電極 3 正孔輸送層 4 有機発光層 5 電子輸送層 9 グリッド電極 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Transparent positive electrode 3 Hole transport layer 4 Organic light emitting layer 5 Electron transport layer 9 Grid electrode

───────────────────────────────────────────────────── フロントページの続き (72)発明者 井上 鉄司 東京都中央区日本橋一丁目13番1号ティ ーディーケイ株式会社内 (56)参考文献 特開 平5−41286(JP,A) 特開 昭56−169770(JP,A) 特開 平4−19993(JP,A) 特開 平4−363896(JP,A) 「薄膜作成の基礎(第2版)」麻蒔立 男著、日刊工業新聞社(1984)p.145 −149「第7章イオンプレーティング」 (58)調査した分野(Int.Cl.7,DB名) H05B 33/00 - 33/28 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Tetsuji Inoue TDC Corporation, 1-13-1 Nihombashi, Chuo-ku, Tokyo (56) References JP-A-5-41286 (JP, A) JP-A Sho56 -169770 (JP, A) JP-A-4-19993 (JP, A) JP-A-4-363896 (JP, A) "Basics of thin film preparation (2nd edition)" by Tatsuo Asamaki, Nikkan Kogyo Shimbun 1984) p. 145 -149 “Chapter 7 Ion Plating” (58) Fields investigated (Int. Cl. 7 , DB name) H05B 33/00-33/28

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 有機電界発光素子の電極を作製する方法
において、有機発光層、正孔輸送層又は電子輸送層であ
る基体層とその表面側に配置したグリッド電極とを共に
負電位にバイアスしておき、電極を形成すべき金属をイ
オン化し、これを前記負電位により加速して、前記基体
層上に成膜する方法において、前記電極層を生成する前
に、前記基体層の表面をプラズマ又は逆スパッタした
後、空気に露呈することなく引き続いて前記基体層の表
面に電極を気相成膜することを特徴とする、有機電界発
光素子の電極作製方法。
In a method of manufacturing an electrode of an organic electroluminescent device, a substrate layer, which is an organic light emitting layer, a hole transport layer or an electron transport layer, and a grid electrode disposed on the surface thereof are both biased to a negative potential. In a method of ionizing a metal to form an electrode and accelerating the ion by the negative potential to form a film on the base layer, the metal layer before forming the electrode layer
The surface of the substrate layer was subjected to plasma or reverse sputtering.
Thereafter, the surface of the base layer is continuously exposed without being exposed to air.
A method for producing an electrode of an organic electroluminescent device, comprising forming an electrode in a vapor phase on a surface .
【請求項2】 イオン化は、イオン化蒸着法、イオンプ
レーテイング法、クラスターイオンビーム法より選択し
た方法により行なわれる請求項1に記載の方法。
2. The method according to claim 1, wherein the ionization is performed by a method selected from an ionization deposition method, an ion plating method, and a cluster ion beam method.
【請求項3】 電極は4eV以下の仕事関数を有する金
属又は少なくとも1種が4eV以下の仕事関数を有する
金属を含有する合金より選択される請求項1または2の
いずれかに記載の有機電界発光素子の電極作製方法。
3. The organic electroluminescence according to claim 1, wherein the electrode is selected from a metal having a work function of 4 eV or less or an alloy containing at least one metal having a work function of 4 eV or less. A method for producing an electrode of a device.
JP28725791A 1991-10-08 1991-10-08 Electrode manufacturing method for electroluminescent device Expired - Fee Related JP3231816B2 (en)

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Application Number Priority Date Filing Date Title
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JP3231816B2 true JP3231816B2 (en) 2001-11-26

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262461A (en) * 1988-03-30 1989-10-19 Cambridge Life Sci Plc Concentration measuring apparatus
JPH05283169A (en) * 1992-03-31 1993-10-29 Toppan Printing Co Ltd Organic thin-film el element
DE69533731T2 (en) * 1994-12-28 2005-10-27 Cambridge Display Technology Ltd. Polymers for optical devices
JP4574039B2 (en) * 2000-03-06 2010-11-04 株式会社半導体エネルギー研究所 Method for manufacturing EL display device
JP2008098106A (en) * 2006-10-16 2008-04-24 Dainippon Printing Co Ltd Manufacturing method of organic electroluminescent element
CN107557733B (en) * 2017-08-30 2020-04-07 陕西斯瑞新材料股份有限公司 Method for plating silver on electrical contact

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
「薄膜作成の基礎(第2版)」麻蒔立男著、日刊工業新聞社(1984)p.145−149「第7章イオンプレーティング」

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