JP3229456U - Heat dissipation embedded package structure - Google Patents

Heat dissipation embedded package structure Download PDF

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JP3229456U
JP3229456U JP2020003910U JP2020003910U JP3229456U JP 3229456 U JP3229456 U JP 3229456U JP 2020003910 U JP2020003910 U JP 2020003910U JP 2020003910 U JP2020003910 U JP 2020003910U JP 3229456 U JP3229456 U JP 3229456U
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circuit layer
layer
package structure
heat dissipation
embedded package
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先 明 陳
先 明 陳
聞 師 王
聞 師 王
威 源 楊
威 源 楊
敏 雄 李
敏 雄 李
本 霞 黄
本 霞 黄
磊 馮
磊 馮
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Zhuhai Access Semiconductor Co Ltd
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Zhuhai Access Semiconductor Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/25Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
    • H01L2224/251Disposition
    • H01L2224/2518Disposition being disposed on at least two different sides of the body, e.g. dual array

Abstract

【課題】デバイスの放熱面積を増やし、多方向の放熱を行うことで放熱効率が向上する放熱埋め込み型パッケージ構造を提供する。【解決手段】放熱埋め込み型パッケージ構造は、少なくとも1つのスルーホール及び垂直に設けられたいくつかの第一銅柱14が設けられ、スルーホール内にデバイス2が設けられ、スルーホールの下部に感光性絶縁材料が充填されるフレームと、デバイスが電気的に接続される第一回路層15と、一部がスルーホールの上部を充填し且つデバイスの上面及び少なくとも一部の側面を包み、第一銅柱に第一回線層と共に電気的に接続される第二回路層16とを含む。第二回路層がデバイスの上面と少なくとも一部の側面を包むため、放熱効率が向上する。【選択図】図2PROBLEM TO BE SOLVED: To provide a heat dissipation embedded package structure in which heat dissipation efficiency is improved by increasing the heat dissipation area of a device and performing heat dissipation in multiple directions. SOLUTION: The heat radiation embedded package structure is provided with at least one through hole and several vertically provided first copper columns 14, a device 2 is provided in the through hole, and the lower part of the through hole is exposed to light. 1. It includes a second circuit layer 16 that is electrically connected to the copper column together with the first line layer. Since the second circuit layer wraps the upper surface of the device and at least a part of the side surface, the heat dissipation efficiency is improved. [Selection diagram] Fig. 2

Description

本考案は半導体パッケージング分野に関し、特にパッケージ構造に関する。 The present invention relates to the field of semiconductor packaging, and particularly to the package structure.

エレクトロニクス産業の急速な発展に伴い、既存の電子製品は、ますます軽薄化され、集積度及び機能性も日々向上し、そのため、抵抗器、コンデンサー又はチップなどの電子デバイスを搭載するための回路基板は、必然的に軽薄化の方向に発展し、それによって回路基板のパッケージング技術が生まれる。ここで、埋め込みパッケージング技術は、フィルター、パワーアンプなどの電源管理製品で広く使用され、人気がますます高まっている。埋め込みパッケージング技術は、電子デバイスを埋め込みパッケージ基板に埋め込む高密度パッケージング技術であり、回路の長さを短くし、電気的特性を向上させることができ、回路基板の表面のはんだ付けポイントを減らすことができ、それによってパッケージングの信頼性が向上し、コストが削減される。しかし、電子部品の集積度がますます高くなるにつれて、放熱は埋め込みパッケージング設計における最も重要な要素の一つとなる。 With the rapid development of the electronics industry, existing electronic products are becoming more and more thin, and their degree of integration and functionality are improving day by day, so circuit boards for mounting electronic devices such as resistors, capacitors or chips. Will inevitably develop in the direction of lightening, which will lead to circuit board packaging technology. Here, embedded packaging technology is widely used and becoming more and more popular in power management products such as filters and power amplifiers. Embedded packaging technology is a high-density packaging technology that embeds electronic devices in an embedded package substrate, which can shorten the length of the circuit, improve the electrical characteristics, and reduce the soldering points on the surface of the circuit board. It can improve the reliability of packaging and reduce the cost. However, as electronic components become more and more integrated, heat dissipation becomes one of the most important factors in embedded packaging design.

従来技術における埋め込みパッケージング技術は、片面放熱パッケージング方式を採用し、即ち埋め込みパッケージ基板の裏面にスルーホールをレーザードリル又はプラズマエッチングにより形成し、さらにスルーホールを金属化して熱伝導性の銅柱を形成し、又は埋め込みパッケージ基板の裏面に大面積の銅シートを直接開設し、このような片面放熱パッケージ構造は放熱面積が限られ、且つ製造コストが高く、製造周期が長い。 The embedded packaging technology in the prior art employs a single-sided heat dissipation packaging method, that is, a through hole is formed on the back surface of the embedded package substrate by laser drilling or plasma etching, and the through hole is metallized to form a thermally conductive copper column. A large-area copper sheet is directly formed on the back surface of the embedded package substrate, and such a single-sided heat-dissipating package structure has a limited heat-dissipating area, a high manufacturing cost, and a long manufacturing cycle.

本考案は、従来技術に存在する技術的課題の一つを少なくとも解決することを目的とする。このため、本考案は、デバイスの放熱面積を増やし、製造コストを削減し、製造周期を短縮することができる放熱埋め込み型パッケージ構造を提供する。 An object of the present invention is to solve at least one of the technical problems existing in the prior art. Therefore, the present invention provides a heat dissipation embedded package structure capable of increasing the heat dissipation area of the device, reducing the manufacturing cost, and shortening the manufacturing cycle.

本考案の実施例による放熱埋め込み型パッケージ構造は、少なくとも1つのスルーホール及び垂直に設けられたいくつかの第一銅柱が設けられ、前記スルーホール内にデバイスが設けられ、前記スルーホールの下部に感光性絶縁材料が充填され、下面が第一面であり、上面が第二面であるフレームと、前記第一面に設けられ、前記デバイスが電気的に接続される第一回路層と、一部が前記スルーホールの上部を充填し且つ前記デバイスの上面及び少なくとも一部の側面を包み、別の部分が前記第一銅柱の上端を覆い、前記第一銅柱に前記第一回線層と共に電気的に接続される第二回路層と、を含む。 The heat dissipation embedded package structure according to the embodiment of the present invention is provided with at least one through hole and several vertically provided first copper columns, a device is provided in the through hole, and a lower portion of the through hole is provided. Is filled with a photosensitive insulating material, the lower surface is the first surface, and the upper surface is the second surface, and the first circuit layer provided on the first surface and electrically connected to the device. A part fills the upper part of the through hole and wraps the upper surface and at least a part side surface of the device, another part covers the upper end of the first copper column, and the first line layer is formed on the first copper column. Includes a second circuit layer, which is electrically connected with.

少なくとも次のような有益な効果がある:第二回路層がデバイスの上面と少なくとも一部の側面を包むため、従来の片面放熱パッケージ構造と比較して、本考案は、デバイスの放熱面積を増やし、これにより、デバイスが多方向の放熱を行うことができ、それによって放熱効率が向上する。 Compared to traditional single-sided heat dissipation package construction, the present invention increases the heat dissipation area of the device because the second circuit layer wraps the top surface and at least some sides of the device with at least the following beneficial effects: This allows the device to dissipate heat in multiple directions, which improves heat dissipation efficiency.

本考案のいくつかの実施例によれば、前記第一回路層の下に設けられ、前記第一回路層との間に第一シーリング層といくつかの第二銅柱が設けられ、前記第二銅柱が前記第一シーリング層を貫通し、前記第二銅柱に前記第一回路層と共に電気的に接続されている第三回路層と、前記第二回路層の上に設けられ、前記第二回路層との間に第二シーリング層といくつかの前記第二銅柱が設けられ、前記第二銅柱が前記第二シーリング層を貫通し、前記第二銅柱に前記第二回路層と共に電気的に接続されている第四回路層とをさらに含む。 According to some embodiments of the present invention, a first sealing layer and some second copper columns are provided below the first circuit layer and between the first circuit layer and the first circuit layer. (Ii) A third circuit layer in which a copper column penetrates the first sealing layer and is electrically connected to the second copper column together with the first circuit layer, and is provided on the second circuit layer. A second sealing layer and some of the second copper columns are provided between the second circuit layer, the second copper columns penetrate the second sealing layer, and the second circuit is formed in the second copper columns. It further includes a fourth circuit layer that is electrically connected with the layer.

本考案のいくつかの実施例によれば、前記第一シーリング層及び前記第二シーリング層はいずれも樹脂製である。 According to some examples of the present invention, both the first sealing layer and the second sealing layer are made of resin.

本考案のいくつかの実施例によれば、前記第二回路層と前記第二面の間に感光性絶縁材料がさらに充填されている。 According to some embodiments of the present invention, a photosensitive insulating material is further filled between the second circuit layer and the second surface.

本考案のいくつかの実施例によれば、前記第一回路層の上面には第一シード層が設けられ、前記第二回路層の下面には第二シード層が設けられる。 According to some embodiments of the present invention, a first seed layer is provided on the upper surface of the first circuit layer, and a second seed layer is provided on the lower surface of the second circuit layer.

本考案のいくつかの実施例によれば、前記フレームは樹脂製である。
本考案の上記及び/又は追加の態様及び利点は、以下の図面と組み合わせる実施例の説明から明らかになり、理解しやすくなる。
According to some embodiments of the present invention, the frame is made of resin.
The above and / or additional aspects and advantages of the present invention will become apparent and easier to understand from the description of the examples combined with the drawings below.

本考案の一つの実施例の縦断面図である。It is a vertical sectional view of one Example of this invention. 本考案の別の実施例の縦断面図である。It is a vertical sectional view of another Example of this invention.

以下に本考案の実施例を詳細に説明し、前記実施例の例が図面に示され、本明細書を通して同じ又は類似の記号は、同じもしくは類似の素子、又は同じもしくは類似の機能を有する素子を表す。以下に図面を参照して説明される実施例は例示的なものであり、本考案を解釈することのみに用いられるが、本考案を制限するものとして理解されるべきではない。 Examples of the present invention will be described in detail below, examples of the above embodiments are shown in the drawings, and the same or similar symbols are the same or similar elements, or elements having the same or similar functions throughout the present specification. Represents. The examples described below with reference to the drawings are exemplary and are used only to interpret the invention, but should not be understood as limiting the invention.

本考案の説明では、方向の説明に関し、例えば「上」、「下」などに示される方位又は位置関係は、図面に示される方位又は位置関係に基づき、本考案を容易に説明し、説明を簡略化するためのものだけであり、示される装置又は素子が必ず特定の方位を有し、特定の方位で構築及び操作することを示し又は暗示するためのものではないと理解すべきであり、したがって、本考案を制限するためのものとして理解されるべきではない。 In the description of the present invention, regarding the explanation of the direction, for example, the orientation or the positional relationship shown in "up", "bottom", etc., is based on the orientation or the positional relationship shown in the drawing, and the present invention is briefly explained and explained. It should be understood that it is for brevity only and is not intended to indicate or imply that the device or element shown will always have a particular orientation and will be constructed and operated in a particular orientation. Therefore, it should not be understood as a limitation of the present invention.

本考案の説明では、いくつかとは1つ以上を意味し、複数とは2つ以上を意味する。構成要素を区別することのみに用いられる第一、第二、第三、第四の説明がある場合、相対的な重要性を指示もしくは示唆する、又は、示された構成要素の数もしくは示された構成要素の順番を暗黙的に示すものではないと理解すべきである。 In the description of the present invention, some means one or more, and plural means two or more. If there are first, second, third, and fourth explanations used only to distinguish the components, they indicate or suggest relative importance, or the number or indication of the components shown. It should be understood that it does not implicitly indicate the order of the components.

本考案の説明では、特に明記しない限り、設置、接続、貼り合わせなどの用語は広義に理解されるべきであり、当業者は技術的解決策の具体的な内容を組み合わせることにより本考案における上記用語の具体的な意味を合理的に確定することができる。 In the description of the present invention, terms such as installation, connection, and bonding should be understood in a broad sense unless otherwise specified, and those skilled in the art can combine the specific contents of the technical solution to describe the above in the present invention. The specific meaning of the term can be reasonably determined.

図1を参照すると、本考案は、フレーム1、第一回路層15と第二回路層16を含む放熱埋め込み型パッケージ構造を開示する。 With reference to FIG. 1, the present invention discloses a heat dissipation embedded package structure including a frame 1, a first circuit layer 15, and a second circuit layer 16.

ここで、フレーム1には少なくとも1つのスルーホール13及び垂直に設けられたいくつかの第一銅柱14が設けられ、スルーホール13内にデバイス2が設けられ、スルーホール13の下部に感光性絶縁材料が充填され、フレーム1の下面が第一面11であり、フレーム1の上面が第二面12であり、第一回路層15が第一面11に設けられ、デバイス2が第一回路層15に電気的に接続され、一部の第二回路層16がスルーホール13の上部を充填し且つデバイス2の上面及び少なくとも一部の側面を包み、別の部分の第二回路層16が第一銅柱14の上端を覆い、第一銅柱14に第一回線層15と第二回路層16が電気的に接続される。 Here, the frame 1 is provided with at least one through hole 13 and some vertically provided first copper columns 14, a device 2 is provided in the through hole 13, and the lower portion of the through hole 13 is photosensitive. An insulating material is filled, the lower surface of the frame 1 is the first surface 11, the upper surface of the frame 1 is the second surface 12, the first circuit layer 15 is provided on the first surface 11, and the device 2 is the first circuit. Electrically connected to layer 15, some second circuit layer 16 fills the top of the through hole 13 and wraps the top surface and at least some side surfaces of the device 2, with another portion of the second circuit layer 16. The first line layer 15 and the second circuit layer 16 are electrically connected to the first copper column 14 so as to cover the upper end of the first copper column 14.

理解されるように、第二回路層16がデバイス2の上面及び少なくとも一部の側面を包むため、従来の片面放熱パッケージ構造と比較して、本考案は、デバイス2の放熱面積を増やし、これにより、デバイス2が多方向の放熱を行うことができ、それによって放熱効率が向上する。 As will be appreciated, the second circuit layer 16 wraps the top surface and at least some of the sides of the device 2 so that the present invention increases the heat dissipation area of the device 2 as compared to a conventional single-sided heat dissipation package structure. As a result, the device 2 can dissipate heat in multiple directions, thereby improving the heat dissipation efficiency.

具体的には、スルーホール13及び第一銅柱14はいずれも1つ以上であってもよく、複数のスルーホール13はフレーム1に分布し、いくつかの第一銅柱14はフレーム1に分布する。デバイス2は、抵抗器、コンデンサー、インダクタなどの受動デバイスであってもよいし、チップなどの能動デバイスであってもよく、デバイス2は、単一のデバイス2であってもよく、背中合わせに積み重ねられた複数のデバイス2の組み合わせであってもよい。 Specifically, each of the through holes 13 and the first copper pillar 14 may be one or more, a plurality of through holes 13 are distributed in the frame 1, and some first copper pillars 14 are in the frame 1. It is distributed. The device 2 may be a passive device such as a resistor, a capacitor, an inductor, or an active device such as a chip, and the device 2 may be a single device 2 and is stacked back to back. It may be a combination of the plurality of devices 2 obtained.

図2を参照すると、本考案のいくつかの実施例では、第三回路層171と第四回路層181を含む。 Referring to FIG. 2, some embodiments of the present invention include a third circuit layer 171 and a fourth circuit layer 181.

ここで、第三回路層171は、第一回路層15の下に設けられ、第一回路層15と第三回路層171の間には第一シーリング層17といくつかの第二銅柱3が設けられ、第二銅柱3が第一シーリング層17を貫通し且つ第一回路層15と第三回路層171を電気的に接続し、第四回路層181は、第二回路層16の上に設けられ、第二回路層16と第四回路層181の間には第二シーリング層18といくつかの第二銅柱3が設けられ、第二銅柱3が第二シーリング層18を貫通し且つ第二回路層16と第四回路層181を電気的に接続する。第一シーリング層17及び第二シーリング層18はいずれも樹脂製である。 Here, the third circuit layer 171 is provided below the first circuit layer 15, and between the first circuit layer 15 and the third circuit layer 171 is a first sealing layer 17 and some second copper columns 3. The second copper column 3 penetrates the first sealing layer 17 and electrically connects the first circuit layer 15 and the third circuit layer 171. The fourth circuit layer 181 is the second circuit layer 16. Provided above, a second sealing layer 18 and some second copper columns 3 are provided between the second circuit layer 16 and the fourth circuit layer 181, and the second copper columns 3 provide the second sealing layer 18. It penetrates and electrically connects the second circuit layer 16 and the fourth circuit layer 181. Both the first sealing layer 17 and the second sealing layer 18 are made of resin.

本考案のいくつかの実施例では、第二回路層16と第二面12の間に感光性絶縁材料がさらに充填されている。感光性絶縁材料は、光線又は高エネルギー線の作用で固体有機ポリマー生成物に変換できる物質である。感光性絶縁材料は、光(紫外光もしくは可視光)又は高エネルギー線(主に電子ビーム)の作用で、低分子不飽和有機オリゴマーが特定の触媒の効果に伴って架橋及び重合された安定な固体有機ポリマー生成物であり、この生成物は、誘電率2.5〜3.4、誘電損失0.001〜0.01、誘電強度100KV〜400KV、表面抵抗及びバルク抵抗10e17Ω.mという良好な誘電特性(電気絶縁性)を有しており、例えば、PIポリイミド、PPOポリオキシキシレンなどである。 In some embodiments of the present invention, a photosensitive insulating material is further filled between the second circuit layer 16 and the second surface 12. A photosensitive insulating material is a substance that can be converted into a solid organic polymer product by the action of light rays or high energy rays. The photosensitive insulating material is a stable low-molecular-weight unsaturated organic oligomer cross-linked and polymerized by the action of light (ultraviolet light or visible light) or high-energy rays (mainly electron beam) with the effect of a specific catalyst. It is a solid organic polymer product, which has a dielectric constant of 2.5 to 3.4, a dielectric loss of 0.001 to 0.01, a dielectric strength of 100 KV to 400 KV, a surface resistance and a bulk resistance of 10e17Ω. It has a good dielectric property (electrical insulation) of m, and is, for example, PI polyimide, PPO polyoxyxylene, or the like.

図1を参照すると、本考案のいくつかの実施例では、第一回路層15の上面には第一シード層111が設けられ、第二回路層16の下面には第二シード層121が設けられる。ここで、第一シード層111及び第二シード層121は、金属チタン、銅、チタンタングステン合金などを含むがこれらに限定されない金属であってもよい。第一シード層111及び第二シード層121により、後続の第一金属層及び第二金属層が電気めっき中に対応する領域により良く付着される。 Referring to FIG. 1, in some embodiments of the present invention, the first seed layer 111 is provided on the upper surface of the first circuit layer 15, and the second seed layer 121 is provided on the lower surface of the second circuit layer 16. Be done. Here, the first seed layer 111 and the second seed layer 121 may be metals including, but not limited to, metallic titanium, copper, titanium-tungsten alloy, and the like. The first seed layer 111 and the second seed layer 121 better adhere the subsequent first and second metal layers to the corresponding regions during electroplating.

本考案のいくつかの実施例では、フレーム1は樹脂製である。
本考案における放熱埋め込み型パッケージ構造の製造プロセスは次の通りである:少なくとも1つのスルーホール13を有するフレーム1を作り、フレーム1にいくつかの第一銅柱14が垂直に設けられ、フレーム1の下面が第一面11であり、テープの粘着面が第一面11に貼り合わせるように、第一面11にテープを粘着し、スルーホール13にデバイス2を配置し、デバイス2の接点がテープに貼り合わせ、感光性絶縁材料がスルーホール13の一部のスペースに硬化され、これにより、デバイス2の上面及び少なくとも一部のデバイス2の側面が露出した。テープを取り外し、第一面11に電気メッキして第一金属層を形成し、デバイス2の上面及び側面、感光性絶縁材料の上面及び第一銅柱14の上端面に電気メッキして第二金属層を形成し、第二金属層が第一銅柱14の上端面とデバイス2の上面及び少なくとも一部の側面を覆い、第一金属層及び第二金属層をエッチングして、第一回路層15と第二回路層16をそれぞれ得て、デバイス2の接点が第一回路層15に電気的に接続され、第一銅柱14の上端及び下端がそれぞれ第二回路層16と第一回路層15に電気的に接続されていた。
In some embodiments of the present invention, the frame 1 is made of resin.
The manufacturing process of the heat dissipation embedded package structure in the present invention is as follows: A frame 1 having at least one through hole 13 is made, and several first copper columns 14 are vertically provided in the frame 1. The lower surface of the device is the first surface 11, the tape is adhered to the first surface 11 so that the adhesive surface of the tape is attached to the first surface 11, the device 2 is arranged in the through hole 13, and the contacts of the device 2 are contacted. Attached to the tape, the photosensitive insulating material was cured into a portion of the space of the through hole 13, which exposed the top surface of the device 2 and at least some side surfaces of the device 2. The tape is removed, the first surface 11 is electroplated to form a first metal layer, and the upper surface and side surfaces of the device 2, the upper surface of the photosensitive insulating material, and the upper end surface of the first copper column 14 are electroplated and second. A first circuit is formed by forming a metal layer, the second metal layer covering the upper end surface of the first copper column 14 and the upper surface and at least a part of the side surface of the device 2, and etching the first metal layer and the second metal layer. Layers 15 and second circuit layers 16 are obtained, respectively, the contacts of the device 2 are electrically connected to the first circuit layer 15, and the upper and lower ends of the first copper column 14 are the second circuit layer 16 and the first circuit, respectively. It was electrically connected to layer 15.

以上に図面と組み合わせて本考案の実施例を詳細に説明したが、本考案は上記実施例に限定されず、当業者が持つ知識の範囲内で、本考案の要旨を逸脱することなく様々な変更を行うことができる。 Although the embodiment of the present invention has been described in detail in combination with the drawings above, the present invention is not limited to the above-mentioned embodiment, and various things can be made within the knowledge of those skilled in the art without deviating from the gist of the present invention. You can make changes.

フレーム1、第一面11、第一シード層111、第二面12、第二シード層121、スルーホール13、第一銅柱14、第一回路層15、第二回路層16、第一シーリング層17、第三回路層171、第二シーリング層18、第四回路層181、デバイス2、第二銅柱3。
Frame 1, first surface 11, first seed layer 111, second surface 12, second seed layer 121, through hole 13, first copper column 14, first circuit layer 15, second circuit layer 16, first sealing Layer 17, third circuit layer 171, second sealing layer 18, fourth circuit layer 181, device 2, second copper column 3.

Claims (6)

放熱埋め込み型パッケージ構造であって、
少なくとも1つのスルーホール(13)及び垂直に設けられたいくつかの第一銅柱(14)が設けられ、前記スルーホール(13)内にデバイス(2)が設けられ、前記スルーホール(13)の下部に感光性絶縁材料が充填され、下面が第一面(11)であり、上面が第二面(12)であるフレーム(1)と、
前記第一面(11)に設けられ、前記デバイス(2)が電気的に接続される第一回路層(15)と、
一部が前記スルーホール(13)の上部を充填し且つ前記デバイス(2)の上面及び少なくとも一部の側面を包み、別の部分が前記第一銅柱(14)の上端を覆い、前記第一銅柱(14)に前記第一回線層(15)と共に電気的に接続される第二回路層(16)と、を含む放熱埋め込み型パッケージ構造。
It has a heat dissipation embedded package structure,
At least one through hole (13) and some vertically provided first copper columns (14) are provided, a device (2) is provided in the through hole (13), and the through hole (13) is provided. The lower part of the frame (1) is filled with a photosensitive insulating material, the lower surface is the first surface (11), and the upper surface is the second surface (12).
A first circuit layer (15) provided on the first surface (11) and to which the device (2) is electrically connected,
A portion fills the upper portion of the through hole (13) and wraps the upper surface and at least a part of the side surface of the device (2), and another portion covers the upper end of the first copper column (14). A heat radiation embedded package structure including a second circuit layer (16) electrically connected to a copper column (14) together with the first line layer (15).
前記第一回路層(15)の下に設けられ、前記第一回路層(15)との間に第一シーリング層(17)といくつかの第二銅柱(3)が設けられ、前記第二銅柱(3)が前記第一シーリング層(17)を貫通し、前記第二銅柱(3)に前記第一回路層(15)と共に電気的に接続されている第三回路層(171)と、
前記第二回路層(16)の上に設けられ、前記第二回路層(16)との間に第二シーリング層(18)といくつかの前記第二銅柱(3)が設けられ、前記第二銅柱(3)が前記第二シーリング層(18)を貫通し、前記第二銅柱(3)に前記第二回路層(16)と共に電気的に接続されている第四回路層(181)とをさらに含むことを特徴とする請求項1に記載の放熱埋め込み型パッケージ構造。
A first sealing layer (17) and some second copper columns (3) are provided below the first circuit layer (15) and between the first circuit layer (15). A third circuit layer (171) in which the two copper columns (3) penetrate the first sealing layer (17) and are electrically connected to the second copper column (3) together with the first circuit layer (15). )When,
A second sealing layer (18) and some of the second copper columns (3) are provided above the second circuit layer (16) and between the second circuit layer (16). A fourth circuit layer (3) in which the second copper column (3) penetrates the second sealing layer (18) and is electrically connected to the second copper column (3) together with the second circuit layer (16). The heat-dissipating embedded package structure according to claim 1, further comprising 181).
前記第一シーリング層(17)及び前記第二シーリング層(18)はいずれも樹脂製であることを特徴とする請求項2に記載の放熱埋め込み型パッケージ構造。 The heat-dissipating embedded package structure according to claim 2, wherein the first sealing layer (17) and the second sealing layer (18) are both made of resin. 前記第二回路層(16)と前記第二面(12)の間に感光性絶縁材料がさらに充填されていることを特徴とする請求項1に記載の放熱埋め込み型パッケージ構造。 The heat-dissipating embedded package structure according to claim 1, wherein a photosensitive insulating material is further filled between the second circuit layer (16) and the second surface (12). 前記第一回路層(15)の上面には第一シード層(111)が設けられ、前記第二回路層(16)の下面には第二シード層(121)が設けられることを特徴とする請求項1に記載の放熱埋め込み型パッケージ構造。 A first seed layer (111) is provided on the upper surface of the first circuit layer (15), and a second seed layer (121) is provided on the lower surface of the second circuit layer (16). The heat dissipation embedded package structure according to claim 1. 前記フレーム(1)は樹脂製であることを特徴とする請求項1に記載の放熱埋め込み型パッケージ構造。 The heat-dissipating embedded package structure according to claim 1, wherein the frame (1) is made of resin.
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