JP3229176B2 - Radiation hardened package - Google Patents
Radiation hardened packageInfo
- Publication number
- JP3229176B2 JP3229176B2 JP25885595A JP25885595A JP3229176B2 JP 3229176 B2 JP3229176 B2 JP 3229176B2 JP 25885595 A JP25885595 A JP 25885595A JP 25885595 A JP25885595 A JP 25885595A JP 3229176 B2 JP3229176 B2 JP 3229176B2
- Authority
- JP
- Japan
- Prior art keywords
- package
- radiation
- hybrid
- base
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ハイブリッドＩＣ
を格納するパッケージに関し、特に放射線照射下で使用
する耐放射線用パッケージに関する。The present invention relates to a hybrid IC.
More particularly, the present invention relates to a radiation-resistant package used under irradiation of radiation.
【０００２】[0002]
【従来の技術】従来、ハイブリッドＩＣを格納するパッ
ケージのうち、特に放射線照射下で使用する耐放射線用
パッケージは図５のような構成をとっていた。図５の断
面図において、１はハイブリッドＩＣ、２はセラミック
基板もしくは金属基板、４はワイヤボンディング、５は
外部リードピン、６はハーメチックガラスであり、また
放射線遮蔽材からなる７ａのパッケージベースと７ｂの
パッケージカバーとでパッケージ７が構成されている。2. Description of the Related Art Conventionally, among packages for storing hybrid ICs, a radiation-resistant package used under irradiation of radiation has a configuration as shown in FIG. In the sectional view of FIG. 5, 1 is a hybrid IC, 2 is a ceramic substrate or a metal substrate, 4 is wire bonding, 5 is an external lead pin, 6 is a hermetic glass, and a package base 7a made of a radiation shielding material and a package base 7b. The package 7 is constituted by the package cover.
【０００３】ここでパッケージベース７ａとその蓋とな
るパッケージカバー７ｂとは接着剤８で接着されてい
る。これは耐放射線能力を増すためにパッケージの肉厚
を厚くしているため、通常のハイブリッドＩＣ用パッケ
ージで用いられるシーム溶接を用いることができないた
めである。Here, the package base 7a and the package cover 7b serving as a lid thereof are adhered with an adhesive 8. This is because the thickness of the package is increased in order to increase the radiation resistance, so that it is not possible to use the seam welding used in a normal hybrid IC package.
【０００４】[0004]
【発明が解決しようとする課題】パッケージカバーとパ
ッケージベースとを接着剤で接着しているため、従来の
構成による耐放射線用パッケージにおいては、パッケー
ジ外部からの水分の侵入や、ハイブリッドＩＣの酸化等
の周辺環境の影響を受けやすく、長期信頼性が得られな
いという問題があった。Since the package cover and the package base are adhered to each other with an adhesive, in a radiation-resistant package having a conventional structure, invasion of moisture from outside the package, oxidation of the hybrid IC, etc. Susceptible to the surrounding environment, and long-term reliability cannot be obtained.
【０００５】また、パッケージによって放射線線量は減
少するが、パッケージを透過して内部に入り込む放射線
や、パッケージを透過する際に発生する２次放射線が、
直接ハイブリッドＩＣに照射され、ハイブリッドＩＣを
構成する半導体素子が照射損傷によって劣化を生じると
いう欠点があった。本発明の目的は、長期信頼性が確保
でき、２次放射線によって半導体素子が劣化しない耐放
射線用パッケージを提供することにある。[0005] Further, although the radiation dose is reduced by the package, the radiation that penetrates the package and enters the inside, and the secondary radiation that is generated when the radiation passes through the package,
There is a drawback that the semiconductor device constituting the hybrid IC is directly irradiated with the hybrid IC and is deteriorated by the irradiation damage. An object of the present invention is to provide a radiation-resistant package that can ensure long-term reliability and does not deteriorate a semiconductor element due to secondary radiation.
【０００６】[0006]
（手段）上記課題を解決し目的を達成するために本発明
の耐放射線用パッケージは、以下のごとく構成されてい
る。 （１）ハイブリッドＩＣを実装した基板を格納し、気密
封止された内部パッケージと、その内部パッケージを格
納し、放射線遮蔽材からなる外部パッケージとを具備す
る。 （２）ハイブリッドＩＣを実装し、気密封止された内部
パッケージと、その内部パッケージを格納し、放射線遮
蔽材からなる外部パッケージとを具備する。 （３）ハイブリッドＩＣを実装した基板を格納もしくは
ハイブリッドＩＣを実装し、気密封止された内部パッケ
ージと、その内部パッケージを格納し、放射線遮蔽材か
らなる第１の外部パッケージと、その第１の外部パッケ
ージを格納し、放射線遮蔽材からなる第２の外部パッケ
ージとを具備する。 （４）前記外部パッケージがタングステン合金、鉛合
金、モリブデン合金、銅合金、ニッケル合金、コバルト
合金、鉄合金等の重金属のγ線を遮蔽する放射線遮蔽材
からなる。 （５）前記外部パッケージが軽元素を含む炭素化合物、
ホウ素化合物、金属水酸化化合物、またはセラミック等
の中性子線を遮蔽する放射線遮蔽材からなる。 （６）上記（３）において、第１の外部パッケージが上
記（４）記載のγ線を遮蔽する放射線遮蔽材からなり、
第２の外部パッケージが上記（５）記載の中性子線を遮
蔽する放射線遮蔽材からなる。(Means) In order to solve the above problems and achieve the object, a radiation-resistant package of the present invention is configured as follows. (1) An airtightly sealed internal package that houses a substrate on which a hybrid IC is mounted and an external package that houses the internal package and is made of a radiation shielding material. (2) An airtightly sealed internal package on which the hybrid IC is mounted, and an external package containing the internal package and made of a radiation shielding material are provided. (3) A substrate on which a hybrid IC is mounted or a hybrid IC is mounted, an airtightly sealed internal package, a first external package storing the internal package, and made of a radiation shielding material, A second external package that stores the external package and is made of a radiation shielding material. (4) The external package is made of a radiation shielding material for shielding gamma rays of heavy metals such as a tungsten alloy, a lead alloy, a molybdenum alloy, a copper alloy, a nickel alloy, a cobalt alloy, and an iron alloy. (5) the outer package is a carbon compound containing a light element;
It is made of a radiation shielding material for shielding a neutron beam such as a boron compound, a metal hydroxide compound, or a ceramic. (6) In the above (3), the first external package is made of the radiation shielding material for shielding γ rays described in the above (4),
The second external package is made of a radiation shielding material for shielding neutron rays described in the above (5).
【０００７】（作用）上記の構成を取ることによって、
放射線遮蔽材からなる外部パッケージによって放射線を
遮蔽し、気密封止された内部パッケージによって、パッ
ケージ外部からの水分の侵入やハイブリッドＩＣの酸化
等が起こらないので、長期に渡って高い信頼性を維持す
ることが可能となる。また、外部パッケージを透過する
放射線や、パッケージを透過する際に発生する２次放射
線が、内部パッケージによって軽減される。これによ
り、照射損傷による半導体素子の劣化を防ぎ、耐放射線
能力が向上する。また異なる放射線を遮蔽する複数の放
射線遮蔽材を組み合わせることによって、数種類の放射
線に対応することができる。内部パッケージに直接ハイ
ブリッドＩＣを実装する事によって、基板が不要とな
り、また放熱効果が高くなるので、高密度実装が可能と
なる。(Operation) By adopting the above configuration,
Radiation is shielded by an external package made of a radiation shielding material, and since the hermetically sealed internal package does not cause moisture intrusion from the outside of the package or oxidation of the hybrid IC, high reliability is maintained for a long period of time. It becomes possible. In addition, the radiation transmitted through the external package and the secondary radiation generated when transmitted through the package are reduced by the internal package. Thereby, deterioration of the semiconductor element due to irradiation damage is prevented, and radiation resistance is improved. Also, by combining a plurality of radiation shielding materials for shielding different radiations, it is possible to cope with several types of radiation. By directly mounting the hybrid IC on the internal package, a substrate is not required and the heat radiation effect is enhanced, so that high-density mounting is possible.
【０００８】[0008]
（第１実施形態）図１は、本発明の第１実施形態に係わ
る耐放射線用パッケージの断面図である。図１におい
て、集積回路および電子部品からなるハイブリッドＩＣ
１が実装されたセラミック基板もしくは金属基板２が、
内部パッケージベース３ａに設置されている。ワイヤボ
ンディング４を通して基板２と電気的に接続する外部リ
ードピン５が内部パッケージベース３ａの側面に設けら
れた穴からから外部に出ており、内部パッケージベース
３ａと外部ピン５との隙間はハーメチックガラス６によ
って気密とされている。ここで、内部パッケージベース
３ａと外部リードピン５の間を埋めるものはハーメチッ
クガラス６でなくてもよく、内部パッケージベース３ａ
と外部リードピンの間の気密を保てれば絶縁体である任
意の物質が使用可能である。内部パッケージベース３ａ
とその蓋となる内部パッケージカバー３ｂとはシーム溶
接によって気密封止され、内部パッケージ３が構成され
ている。ここで内部パッケージ３は気密封止可能なハイ
ブリッドＩＣ用のメタルパッケージ（主にコバール）を
用いている。(First Embodiment) FIG. 1 is a sectional view of a radiation-resistant package according to a first embodiment of the present invention. In FIG. 1, a hybrid IC comprising an integrated circuit and electronic components
The ceramic substrate or metal substrate 2 on which 1 is mounted is
It is installed on the internal package base 3a. External lead pins 5 electrically connected to the substrate 2 through the wire bonding 4 extend out of the holes provided on the side surfaces of the internal package base 3a, and a gap between the internal package base 3a and the external pins 5 is formed by a hermetic glass 6. It is airtight. Here, what fills the space between the internal package base 3a and the external lead pins 5 does not have to be the hermetic glass 6, but the internal package base 3a.
Any material that is an insulator can be used as long as airtightness between the lead pins and the external lead pins can be maintained. Internal package base 3a
The inner package cover 3b serving as the lid is hermetically sealed by seam welding to form the inner package 3. Here, as the internal package 3, a metal package (mainly Kovar) for a hybrid IC that can be hermetically sealed is used.
【０００９】また、内部パッケージ３がタングステン
（Ｗ）合金からなる外部パッケージベース７ａとその蓋
となる外部パッケージカバー７ｂとからなる外部パッケ
ージ７の中に格納されている。外部パッケージベース７
ａと外部パッケージカバー７ｂとは接着剤８で接着され
ている。また、内部パッケージ３と外部パッケージ７と
の間にできた隙間には接着剤または充填剤９で充填され
ており、さらに外部パッケージの側面に外部リードピン
５を通すために開けられた穴の隙間にも接着剤もしくは
充填剤１０が充填されている。The internal package 3 is housed in an external package 7 comprising an external package base 7a made of a tungsten (W) alloy and an external package cover 7b serving as a lid thereof. External package base 7
a and the external package cover 7b are adhered with an adhesive 8. The gap formed between the inner package 3 and the outer package 7 is filled with an adhesive or a filler 9, and the gap between the holes formed for passing the outer lead pins 5 on the side surfaces of the outer package is formed. Is also filled with an adhesive or filler 10.
【００１０】ここで、外部リードピン５の位置は図１の
ようなパッケージ側面部に限らず、図２に示すようなパ
ッケージ下面でもよいし、またパッケージ上面でもよ
い。本実施形態においては、放射線遮蔽材からなる外部
パッケージ７によって放射線を遮蔽し、気密封止可能な
内部パッケージ３によって、パッケージ３外部からの水
分の侵入や、ハイブリッドＩＣ１の酸化等が起こらない
ので長期信頼性が得られる。また、外部パッケージ７を
透過する放射線や、外部パッケージ７を透過する際に発
生する２次放射線が、内部パッケージ３によって軽減さ
れるので、半導体素子の劣化を防ぐことができる。Here, the position of the external lead pins 5 is not limited to the side surface of the package as shown in FIG. 1, but may be the lower surface of the package as shown in FIG. 2 or the upper surface of the package. In the present embodiment, radiation is shielded by the outer package 7 made of a radiation shielding material, and the inner package 3 that can be hermetically sealed does not cause intrusion of moisture from the outside of the package 3 or oxidation of the hybrid IC 1. Reliability is obtained. In addition, the radiation that passes through the external package 7 and the secondary radiation that is generated when the radiation passes through the external package 7 are reduced by the internal package 3, so that deterioration of the semiconductor element can be prevented.
【００１１】なお、本実施形態では主にγ線用の放射線
遮蔽材としてタングステン（Ｗ）合金を挙げたが、他に
鉛（Ｐｂ）合金、モリブデン（Ｍｏ）合金、銅（Ｃｕ）
合金、ニッケル合金（Ｎｉ）、コバルト（Ｃｏ）合金、
鉄（Ｆｅ）合金などの重金属からなる材料が放射線を遮
蔽する効果が高く、放射線遮蔽材として適している。ま
た、放射線遮蔽材を変えれば他の種類の放射線を遮蔽す
ることも可能である。In this embodiment, a tungsten (W) alloy is mainly used as a radiation shielding material for γ-rays. However, a lead (Pb) alloy, a molybdenum (Mo) alloy, a copper (Cu)
Alloy, nickel alloy (Ni), cobalt (Co) alloy,
A material made of a heavy metal such as an iron (Fe) alloy has a high radiation shielding effect and is suitable as a radiation shielding material. Further, if the radiation shielding material is changed, it is possible to shield other types of radiation.
【００１２】（第２実施形態）図３は本発明の第２実施
形態に係わる耐放射線用パッケージの断面図である。な
お図１と同一な部分には同一符号を付し、その詳しい説
明は省略する。(Second Embodiment) FIG. 3 is a sectional view of a radiation-resistant package according to a second embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.
【００１３】本実施形態において第１実施形態と異なる
のは気密封止可能な内部パッケージ１１がセラミックス
から構成されており（内部セラミックパッケージベース
１１ａと内部セラミックパッケージカバー１１ｂ）、こ
のセラミックからなる内部セラミックパッケージベース
１１ａ上にハイブリッドＩＣ１が実装されていることで
ある。そのため、先の実施形態で用いたような基板２が
不要となり、またハイブリッドＩＣ１が内部セラミック
パッケージ１１に直接接触することから放熱効果が高い
ために、高密度実装が可能となる。The present embodiment differs from the first embodiment in that the hermetically sealable inner package 11 is made of ceramic (inner ceramic package base 11a and inner ceramic package cover 11b), and the inner ceramic made of this ceramic is used. The hybrid IC 1 is mounted on the package base 11a. Therefore, the substrate 2 used in the previous embodiment is not required, and since the hybrid IC 1 directly contacts the internal ceramic package 11, the heat radiation effect is high, so that high-density mounting is possible.
【００１４】（第３実施形態）図４は本発明の第３実施
形態に係わる耐放射線用パッケージの断面図である。な
お図１と同一な部分には同一符号を付し、その詳しい説
明は省略する。(Third Embodiment) FIG. 4 is a sectional view of a radiation-resistant package according to a third embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.
【００１５】本実施形態は、第１実施形態の耐放射線用
パッケージの外側に外部パッケージベース１２ａと外部
パッケージカバー１２ｂとからなる第２の外部パッケー
ジ１２で覆ったことである。ここで第２の外部パッケー
ジ１２は軽元素を含む炭素化合物、ホウ素化合物、金属
水酸化化合物、または、セラミックス等の中性子線を遮
蔽する放射線遮蔽材から構成されている。In this embodiment, the outside of the radiation-resistant package of the first embodiment is covered with a second external package 12 comprising an external package base 12a and an external package cover 12b. Here, the second outer package 12 is made of a radiation shielding material for shielding a neutron beam such as a carbon compound containing a light element, a boron compound, a metal hydroxide compound, or ceramics.
【００１６】内側の第１の外部パッケージ７にγ線を遮
蔽する材料を用い、外側の第２の外部パッケージ１２に
中性子を遮蔽する材料を用いることで、数種類の放射線
に対応できるパッケージ構造とすることができる。これ
により、第２の外部パッケージ１２で中性子を遮蔽し、
第１の外部パッケージ７でγ線を遮蔽することが可能と
なる。さらに中性子が外側の第２の外部パッケージ１２
を透過する際に発生する２次放射線に対しても、内側の
第１の外部パッケージ７が遮蔽効果を発揮し、内側のハ
イブリッドＩＣ１に照射される放射線量を著しく軽減す
ることが可能となる。By using a material for shielding γ-rays for the inner first outer package 7 and using a material for shielding neutrons for the outer second outer package 12, a package structure capable of coping with several types of radiation is obtained. be able to. Thereby, the neutrons are shielded by the second external package 12,
Γ-rays can be shielded by the first external package 7. Further, the neutrons are located outside the second outer package 12.
, The inner first external package 7 exhibits a shielding effect against secondary radiation generated when the inner hybrid IC 1 is transmitted, so that the amount of radiation applied to the inner hybrid IC 1 can be significantly reduced.
【００１７】また、内部パッケージ３として第２実施形
態で述べた基板と内部パッケージとが一体化したセラミ
ックパッケージを用いることも可能である。その他、本
発明の主旨を逸脱しない範囲で、種々変形して実施する
ことが可能である。It is also possible to use the ceramic package in which the substrate and the internal package described in the second embodiment are integrated as the internal package 3. In addition, various modifications can be made without departing from the spirit of the present invention.
【００１８】[0018]
【発明の効果】ハイブリッドＩＣを格納するパッケージ
において、外部から水分の侵入や、ハイブリッドＩＣの
酸化等がおきないので長期信頼性が確保でき、２次放射
線によって半導体素子が劣化しない耐放射線用パッケー
ジを提供することができる。According to the present invention, there is provided a package for storing a hybrid IC, which is capable of ensuring long-term reliability since no intrusion of moisture from the outside, oxidation of the hybrid IC, etc. can be ensured, and a semiconductor element is not deteriorated by secondary radiation. Can be provided.
【図１】本発明の第１実施形態に係わる耐放射線用パッ
ケージの断面図。FIG. 1 is a cross-sectional view of a radiation-resistant package according to a first embodiment of the present invention.
【図２】本発明の第１実施形態に係わる耐放射線用パッ
ケージの断面図。FIG. 2 is a cross-sectional view of the radiation-resistant package according to the first embodiment of the present invention.
【図３】本発明の第２実施形態に係わる耐放射線用パッ
ケージの断面図。FIG. 3 is a cross-sectional view of a radiation-resistant package according to a second embodiment of the present invention.
【図４】本発明の第３実施形態に係わる耐放射線用パッ
ケージの断面図。FIG. 4 is a cross-sectional view of a radiation-resistant package according to a third embodiment of the present invention.
【図５】従来の耐放射線用パッケージの断面図。FIG. 5 is a cross-sectional view of a conventional radiation-resistant package.
１…ハイブリッドＩＣ ２…基板 ３…内部パッケージ ３ａ…内部パッケー
ジベース ３ｂ…内部パッケージカバー ４…ワイヤボン
ディング ５…外部リードピン ６…ハーメチック
ガラス ７…第１の外部パッケージ ７ａ…第１の外部パ
ッケージベース ７ｂ…第１の外部パッケージカバー ８…接着剤 ９…充填剤もしくは接着剤 １０…充填剤もしく
は接着剤 １１…内部セラミックパッケージ １１ａ…内部セラミックパッケージベース １１ｂ…内部セラミックパッケージカバー １２…第２の外部パッケージ １２ａ…第２の外部
パッケージベース １２ｂ…第２の外部パッケージカバーDESCRIPTION OF SYMBOLS 1 ... Hybrid IC 2 ... Substrate 3 ... Inner package 3a ... Inner package base 3b ... Inner package cover 4 ... Wire bonding 5 ... External lead pin 6 ... Hermetic glass 7 ... 1st outer package 7a ... 1st outer package base 7b ... First outer package cover 8 ... Adhesive 9 ... Filler or adhesive 10 ... Filler or adhesive 11 ... Inner ceramic package 11a ... Inner ceramic package base 11b ... Inner ceramic package cover 12 ... Second outer package 12a ... 2nd external package base 12b ... 2nd external package cover
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 実開 平２−114998（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/00 - 23/08 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-114998 (JP, U) (58) Fields surveyed (Int. Cl. 7 , DB name) H01L 23/00-23/08
Claims (2)
しくはハイブリッドＩＣを実装し、気密封止された内部
パッケージと、その内部パッケージを格納した、γ線を
遮蔽する放射線遮蔽材からなる第１の外部パッケージ
と、その第１の外部パッケージを格納した、中性子線を
遮蔽する放射線遮蔽材からなる第２の外部パッケージと
を具備してなることを特徴とする耐放射線用パッケー
ジ。1. An airtightly sealed internal package containing a substrate on which a hybrid IC is mounted or a hybrid IC mounted thereon, and a gamma ray containing the internal package are stored.
A first outer package made of a radiation shielding material to be shielded, and a neutron beam storing the first outer package.
A radiation-resistant package, comprising: a second external package made of a radiation shielding material for shielding.
金、鉛合金、モリブデン合金、銅合金、ニッケル合金、
コバルト合金、及び鉄合金の何れかから構成され、第２
の外部パッケージが炭素化合物、ホウ素化合物、金属水
酸化化合物、及びセラミックの何れかから構成されてい
ることを特徴とする請求項１に記載の耐放射線用パッケ
ージ。2. The method according to claim 1, wherein the first external package is a tungsten alloy, a lead alloy, a molybdenum alloy, a copper alloy, a nickel alloy,
Composed of either a cobalt alloy or an iron alloy,
2. The radiation-resistant package according to claim 1, wherein the external package is made of any one of a carbon compound, a boron compound, a metal hydroxide compound, and a ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25885595A JP3229176B2 (en) | 1995-10-05 | 1995-10-05 | Radiation hardened package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25885595A JP3229176B2 (en) | 1995-10-05 | 1995-10-05 | Radiation hardened package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09102558A JPH09102558A (en) | 1997-04-15 |
| JP3229176B2 true JP3229176B2 (en) | 2001-11-12 |
Family
ID=17325977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25885595A Expired - Lifetime JP3229176B2 (en) | 1995-10-05 | 1995-10-05 | Radiation hardened package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3229176B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013160684A (en) * | 2012-02-07 | 2013-08-19 | Mitsubishi Electric Corp | Semiconductor device and module |
-
1995
- 1995-10-05 JP JP25885595A patent/JP3229176B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09102558A (en) | 1997-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5635754A (en) | Radiation shielding of integrated circuits and multi-chip modules in ceramic and metal packages | |
| US7148084B2 (en) | Radiation shielding of integrated circuits and multi-chip modules in ceramic and metal packages | |
| US5889316A (en) | Radiation shielding of plastic integrated circuits | |
| JP4437919B2 (en) | EMI shielding for electronic parts package | |
| US6858795B2 (en) | Radiation shielding of three dimensional multi-chip modules | |
| US4580157A (en) | Semiconductor device having a soft-error preventing structure | |
| JPH0117257B2 (en) | ||
| JPS614250A (en) | Package for semiconductor device | |
| US5150180A (en) | Packaged semiconductor device with high energy radiation absorbent glass | |
| JPS62125651A (en) | Radiation resistant package | |
| JP3229176B2 (en) | Radiation hardened package | |
| JPS628032B2 (en) | ||
| WO2020153335A1 (en) | Light source device and distance measuring device | |
| US6121672A (en) | Raised pedestal radiation shield for sensitive electronics | |
| JP3495246B2 (en) | Electronic component storage package | |
| JPS6157704B2 (en) | ||
| US7115812B2 (en) | Radiation shielded semiconductor package | |
| JP2755360B2 (en) | Semiconductor module with alpha particle shielding function | |
| JP2877292B2 (en) | Semiconductor container and semiconductor device | |
| US6452263B1 (en) | Radiation shield and radiation shielded integrated circuit device | |
| JPS5942983B2 (en) | semiconductor equipment | |
| JP2002166899A (en) | Reinforced container for space environment | |
| JPS631755B2 (en) | ||
| JP4127645B2 (en) | Electronic component mounting equipment | |
| JPS631756B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010807 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080907 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080907 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090907 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090907 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100907 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110907 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110907 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120907 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120907 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130907 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term |