JP3225492U - プラズマエッチングチャンバ内の汚染を低減する装置 - Google Patents

プラズマエッチングチャンバ内の汚染を低減する装置 Download PDF

Info

Publication number
JP3225492U
JP3225492U JP2019002034U JP2019002034U JP3225492U JP 3225492 U JP3225492 U JP 3225492U JP 2019002034 U JP2019002034 U JP 2019002034U JP 2019002034 U JP2019002034 U JP 2019002034U JP 3225492 U JP3225492 U JP 3225492U
Authority
JP
Japan
Prior art keywords
insulator ring
process kit
ring
insulator
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019002034U
Other languages
English (en)
Japanese (ja)
Inventor
チャング シュエ
チャング シュエ
グエン アンドリュー
グエン アンドリュー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of JP3225492U publication Critical patent/JP3225492U/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019002034U 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置 Active JP3225492U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/010,239 US11211282B2 (en) 2018-06-15 2018-06-15 Apparatus to reduce contamination in a plasma etching chamber
US16/010,239 2018-06-15

Publications (1)

Publication Number Publication Date
JP3225492U true JP3225492U (ja) 2020-03-12

Family

ID=68838753

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019002034U Active JP3225492U (ja) 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置
JP2019105901A Active JP7344676B2 (ja) 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019105901A Active JP7344676B2 (ja) 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置

Country Status (5)

Country Link
US (1) US11211282B2 (https=)
JP (2) JP3225492U (https=)
KR (1) KR102734548B1 (https=)
CN (2) CN110610844B (https=)
TW (2) TWI829710B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11211282B2 (en) * 2018-06-15 2021-12-28 Applied Materials, Inc. Apparatus to reduce contamination in a plasma etching chamber
KR102731053B1 (ko) 2020-03-19 2024-11-15 삼성전자주식회사 기판 처리 장치
US12112971B2 (en) * 2021-03-12 2024-10-08 Applied Materials, Inc. Multi-zone semiconductor substrate supports
CN217387074U (zh) * 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环
US20250236947A1 (en) * 2024-01-19 2025-07-24 Applied Materials, Inc. Dielectric Deposition Ring with Fins for Physical Vapor Deposition
US20250305141A1 (en) * 2024-03-27 2025-10-02 Applied Materials, Inc. Multi-section substrate supports and related methods, process kits, and processing chambers for semiconductor manufacturing
WO2025217112A1 (en) * 2024-04-11 2025-10-16 Lam Research Corporation Edge ring for high temperature tolerance in substrate processing systems

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US5983906A (en) 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US8398778B2 (en) * 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US7858898B2 (en) * 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8270141B2 (en) * 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US8485128B2 (en) * 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
JP5893516B2 (ja) 2012-06-22 2016-03-23 東京エレクトロン株式会社 被処理体の処理装置及び被処理体の載置台
US8865012B2 (en) * 2013-03-14 2014-10-21 Applied Materials, Inc. Methods for processing a substrate using a selectively grounded and movable process kit ring
WO2014159222A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc. Methods and apparatus for processing a substrate using a selectively grounded and movable process kit ring
US9315891B2 (en) * 2013-03-15 2016-04-19 Applied Materials, Inc. Methods for processing a substrate using multiple substrate support positions
US9449797B2 (en) * 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
JP6695750B2 (ja) * 2016-07-04 2020-05-20 株式会社荏原製作所 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置
KR101816861B1 (ko) * 2016-10-21 2018-01-10 (주)제이하라 플라즈마 표면 처리장치
US11211282B2 (en) * 2018-06-15 2021-12-28 Applied Materials, Inc. Apparatus to reduce contamination in a plasma etching chamber
US10847347B2 (en) * 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
JP7450512B2 (ja) * 2020-10-07 2024-03-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102932770B1 (ko) * 2021-10-19 2026-03-03 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법

Also Published As

Publication number Publication date
CN110610844B (zh) 2025-08-05
CN210110704U (zh) 2020-02-21
US20190385891A1 (en) 2019-12-19
TW202013427A (zh) 2020-04-01
TWI829710B (zh) 2024-01-21
CN110610844A (zh) 2019-12-24
US11211282B2 (en) 2021-12-28
KR20190142255A (ko) 2019-12-26
TWM590308U (zh) 2020-02-01
JP2019220688A (ja) 2019-12-26
KR102734548B1 (ko) 2024-11-25
JP7344676B2 (ja) 2023-09-14

Similar Documents

Publication Publication Date Title
JP3225492U (ja) プラズマエッチングチャンバ内の汚染を低減する装置
US11743973B2 (en) Placing table and plasma processing apparatus
KR102335248B1 (ko) 플라즈마 프로세싱 챔버 내의 엘라스토머 시일의 수명을 연장시키는 크기로 형성된 에지 링
JP6728117B2 (ja) 取り外し可能なガス分配プレートを有するシャワーヘッド
US9472443B2 (en) Selectively groundable cover ring for substrate process chambers
US7850174B2 (en) Plasma processing apparatus and focus ring
US20230326724A1 (en) Plasma processing apparatus
JP2018533207A (ja) 背面でのプラズマ点火が低減されたシャワーヘッド
JP2019220497A (ja) 載置台及びプラズマ処理装置
JP2023179594A (ja) プラズマ処理装置及び基板支持台アセンブリ
JP7308767B2 (ja) 載置台およびプラズマ処理装置
JP7446176B2 (ja) 載置台及びプラズマ処理装置
CN110036137B (zh) 用于处理基板的处理配件和方法
CN113496925A (zh) 边缘环、载置台以及基板处理装置
TW202101506A (zh) 具有減少的電漿弧的處理腔室
TW202301411A (zh) 將處理環境擴展到基板直徑之外的基板邊緣環
JP2023146567A (ja) 基板処理装置及びカバーリングアセンブリ
JP7692786B2 (ja) プラズマ処理装置
US20260100339A1 (en) Grounded Slit Door for Substrate Process Chamber
JP2021013011A (ja) 基板処理装置
WO2020050071A1 (ja) プラズマ処理装置
JPWO2020161919A1 (ja) プラズマ処理装置
US20250293008A1 (en) External Cooling Assembly for Substrate Support
JP2024050423A (ja) プラズマ処理装置及び基板処理装置

Legal Events

Date Code Title Description
A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20191003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200104

R150 Certificate of patent or registration of utility model

Ref document number: 3225492

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250