JP3220254B2 - Semiconductor element mounting method - Google Patents
Semiconductor element mounting methodInfo
- Publication number
- JP3220254B2 JP3220254B2 JP25467092A JP25467092A JP3220254B2 JP 3220254 B2 JP3220254 B2 JP 3220254B2 JP 25467092 A JP25467092 A JP 25467092A JP 25467092 A JP25467092 A JP 25467092A JP 3220254 B2 JP3220254 B2 JP 3220254B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- ultraviolet
- light
- liquid crystal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83874—Ultraviolet [UV] curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は透光性基板上に光硬化樹
脂を介して半導体素子を搭載する半導体素子の実装方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a semiconductor device on a light-transmitting substrate via a photo-curable resin.
【０００２】[0002]
【従来の技術】近年、半導体素子を搭載したデバイスが
種々開発されている。例えば、液晶モジュール、ＥＬパ
ネル等があり、この液晶モジュールには、ガラス基板の
上に半導体素子を搭載したＣＯＧ方式として提案されて
いる。2. Description of the Related Art In recent years, various devices equipped with semiconductor elements have been developed. For example, there are a liquid crystal module, an EL panel, and the like. This liquid crystal module has been proposed as a COG method in which a semiconductor element is mounted on a glass substrate.
【０００３】このガラス基板の上に半導体素子を搭載し
た構成においては、そのガラス基板の上の配線部と半導
体素子とをワイヤーボンディングする技術が確立されて
いるが、近年、半導体素子の電極と基板の上の配線部と
を直接接続するフェイスダウン方式も提案されている。
この接続には異方性導電膜、導電性ペースト、ゴムコネ
クタを用いたり、更に光硬化樹脂を用いることも提案さ
れている（特公平２７１８０号参照）。In a configuration in which a semiconductor element is mounted on a glass substrate, a technique of wire-bonding a wiring portion on the glass substrate to the semiconductor element has been established. A face-down method of directly connecting a wiring section above the head has also been proposed.
It has been proposed to use an anisotropic conductive film, a conductive paste, a rubber connector, or a photocurable resin for this connection (see Japanese Patent Publication No. 27180).
【０００４】この光硬化樹脂を用いる場合には、その塗
布面を予め紫外線により照射し、これにより、その被着
面に付いた有機物を除去し、その結果、光硬化樹脂の基
板に対する密着性を高めることも提案されている。In the case of using this photocurable resin, the coating surface is irradiated with ultraviolet rays in advance, thereby removing organic substances attached to the adhered surface, and as a result, the adhesion of the photocurable resin to the substrate is reduced. It has also been proposed to increase.
【０００５】[0005]
【発明が解決しようとする問題点】しかしながら、上記
提案のように光硬化樹脂の塗布面を予め紫外線により照
射する工程、更に光硬化樹脂を塗布する工程、更に塗布
した樹脂を硬化する工程等を順次行う一連の製造プロセ
スでは、工程数が多くなり、それに伴って製造コストが
大きくなるという問題点があった。However, as described above, the step of irradiating the application surface of the photocurable resin with ultraviolet rays in advance, the step of applying the photocurable resin, and the step of curing the applied resin, etc. In a series of manufacturing processes performed sequentially, there is a problem in that the number of steps increases and the manufacturing cost increases accordingly.
【０００６】[0006]
【問題点を解決するための手段】本発明の半導体素子の
実装方法は、透光性基板の半導体素子搭載領域に紫外線
照射装置を用いて紫外線を露光し、次いで、その半導体
素子搭載領域に光硬化樹脂を塗布し、その塗布した光硬
化樹脂を介して半導体素子を搭載し、然る後上記紫外線
照射装置を用いて透光性基板の半導体素子の非搭載領域
を介して透光性基板の裏側に配置した反射手段に紫外線
を投光し、その反射手段により反射された紫外線により
上記塗布した光硬化樹脂を露光且つ固化して半導体素子
を透光性基板上に固定せしめたことを特徴する。According to the method of mounting a semiconductor device of the present invention, a semiconductor device mounting region of a light-transmitting substrate is exposed to ultraviolet light using an ultraviolet irradiation device, and then the semiconductor device mounting region is exposed to light. The cured resin is applied, the semiconductor element is mounted via the applied photocurable resin, and then the ultraviolet light irradiation device is used to mount the semiconductor element on the non-mounted area of the semiconductor element on the light-transmitted substrate. Ultraviolet rays are projected onto the reflecting means arranged on the back side, and the applied photocurable resin is exposed and solidified by the ultraviolet rays reflected by the reflecting means, thereby fixing the semiconductor element on the light transmitting substrate. .
【０００７】[0007]
【作用】上記構成の半導体素子の実装方法によれば、透
光性基板の上に半導体素子を搭載するＣＯＧ方式液晶モ
ジュール等においては、同一の紫外線照射装置を用いて
半導体素子搭載領域に対して紫外線を露光し、しかも、
光硬化樹脂を露光且つ固化して半導体素子を透光性基板
上に固定せしめることができ、これにより、従来であれ
ば、両者の紫外線照射を別々の紫外線照射装置により行
われなければならなかったのに対して、一個の装置だけ
でよく、その結果、その装置の削減に伴う製造コストの
低減が可能となった。According to the method of mounting a semiconductor element having the above structure, in a COG type liquid crystal module or the like in which a semiconductor element is mounted on a translucent substrate, the same ultraviolet irradiation device is used to mount the semiconductor element on the semiconductor element mounting area. Exposure to ultraviolet light, and
The semiconductor element can be fixed on the light-transmitting substrate by exposing and solidifying the photocurable resin, whereby conventionally, both ultraviolet irradiations had to be performed by separate ultraviolet irradiation devices. On the other hand, only one device is required, and as a result, the manufacturing cost can be reduced due to the reduction in the number of devices.
【０００８】[0008]
【実施例】本発明をＣＯＧ方式液晶モジュールにおいて
半導体素子を搭載する場合を実施例にして詳細に説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to an embodiment in which a semiconductor element is mounted on a COG type liquid crystal module.
【０００９】図１は液晶パネル１のガラス基板２に半導
体素子を搭載してＣＯＧ方式液晶モジュールにするに当
たって、その搭載状態を示しており、３は表示領域、４
はその表示領域を駆動するための配線領域である。この
液晶パネル１を作製するには、２枚のガラス基板２、５
の各一主面にインジウム・スズ・オキサイドとクロムと
アルミニウムとの各層を順次積層し、次に表示領域３に
位置するクロムとアルミニウムとの両層をエッチング除
去するとともに、この表示領域３に複数の透明電極（図
示せず）をライン状に配列し、この透明電極を配線領域
４にまで延在させ、その延在した透明電極に上にクロム
層とアルミニウム層とを順次積層してなる配線部６を形
成し、その後、表示領域３の透明電極の上に配向膜（図
示せず）を形成し、更にこの配向膜の表面をラビング処
理して液晶分子の向きを所定の方向に設定するようにし
ている。このような２枚の被膜基板を、各透明電極ライ
ンが交差するように且つ対向するように配置して、その
間に液晶７を注入して表示領域３と成すとともに、更に
この表示領域３の周囲をシール部８でもって封止する。
同図中の９は半導体素子の搭載領域である。FIG. 1 shows a mounted state in mounting a semiconductor element on a glass substrate 2 of a liquid crystal panel 1 to form a COG type liquid crystal module.
Is a wiring area for driving the display area. To manufacture the liquid crystal panel 1, two glass substrates 2, 5
Each layer of indium tin oxide, chromium, and aluminum is sequentially laminated on each of the main surfaces, and then both the chromium and aluminum layers located in the display area 3 are removed by etching. The transparent electrode (not shown) is arranged in a line, and the transparent electrode is extended to the wiring region 4, and the chromium layer and the aluminum layer are sequentially laminated on the extended transparent electrode. A portion 6 is formed, and thereafter, an alignment film (not shown) is formed on the transparent electrode in the display area 3, and the surface of the alignment film is rubbed to set the direction of liquid crystal molecules in a predetermined direction. Like that. Such two coated substrates are arranged so that the transparent electrode lines cross each other and face each other, and a liquid crystal 7 is injected between them to form a display region 3. Is sealed with a seal portion 8.
Reference numeral 9 in the figure denotes a mounting area of the semiconductor element.
【００１０】次いで、この液晶パネル１を有機溶剤と超
音波洗浄を組み合わせて洗浄し、その後に液晶配向検査
を行う。この液晶配向検査は偏光板を介して光を透過さ
せることにより行う。Next, the liquid crystal panel 1 is cleaned by a combination of an organic solvent and ultrasonic cleaning, and then a liquid crystal alignment test is performed. This liquid crystal alignment test is performed by transmitting light through a polarizing plate.
【００１１】その後、上記液晶パネル１に対して、図２
に示すような紫外線照射装置１０でもって紫外線照射す
る。この紫外線照射装置１０はランプ電源コントローラ
１１と光源ユニット１２とから構成され、この光源ユニ
ット１２にはキセノンランプ１３（例えば強度１．２Ｗ
／ｃｍ2 の水銀キセノンランプ）が搭載され、このキセ
ノンランプ１３はその背後に配置された反射鏡１４によ
り有効に反射されながら紫外線を照射する。また、この
照射に当たっては、ランプ電源コントローラ１１により
コントロールされながらキセノンランプ１３に電力印加
される。そして、キセノンランプ１３により照射された
紫外線はフレキシブルケーブル１５を介してその端部の
露光部１６より所定の方向に照らされる。Then, the liquid crystal panel 1 shown in FIG.
UV irradiation is performed by an ultraviolet irradiation device 10 as shown in FIG. The ultraviolet irradiation device 10 includes a lamp power supply controller 11 and a light source unit 12. The light source unit 12 has a xenon lamp 13 (for example, having an intensity of 1.2 W).
/ Cm 2 mercury xenon lamp), and the xenon lamp 13 emits ultraviolet rays while being effectively reflected by a reflecting mirror 14 disposed behind the xenon lamp 13. In this irradiation, electric power is applied to the xenon lamp 13 while being controlled by the lamp power supply controller 11. Then, the ultraviolet light emitted by the xenon lamp 13 is illuminated in a predetermined direction from an exposure unit 16 at the end thereof via a flexible cable 15.
【００１２】次に上記液晶パネル１に対して紫外線照射
装置１０でもって紫外線照射する工程を図３〜図６によ
り説明する。Next, a process of irradiating the liquid crystal panel 1 with ultraviolet rays by the ultraviolet irradiating device 10 will be described with reference to FIGS.
【００１３】先ず図３に示すように液晶パネル１の半導
体素子搭載領域９に対して紫外線照射し、この領域９の
面に付着した有機物等を分解除去する。これには上記水
銀キセノンランプ１３の主たる発光波長のうち１８４ｎ
ｍ、２５４ｎｍ付近の短波長が有効である（但し、この
短波長光はガラス基板２、５に吸収される）。この工程
により半導体素子搭載領域９のガラス面の接触角が大き
くなり、ガラス基板２に対する紫外線硬化樹脂の密着性
が著しく向上する。この接触角は図６に示すように基板
１７に紫外線硬化樹脂１８を滴下したときの基板１７と
樹脂１８との接点の角度θでもって表し、本実施例では
接触角θが約１４°であり、この紫外線照射がない場合
には、その接触角θが約８２°であった。そして、両者
に対して半導体素子を基板に接続したサンプルを作成
し、導通の有無を評価することにより不良率を求めたと
ころ、その紫外線硬化樹脂の密着性の不良率は前者が
０．０３％であるのに対して、後者は４．６％であっ
た。First, as shown in FIG. 3, the semiconductor element mounting area 9 of the liquid crystal panel 1 is irradiated with ultraviolet rays to decompose and remove organic substances and the like attached to the surface of the area 9. This includes 184 n of the main emission wavelength of the mercury xenon lamp 13.
m, a short wavelength around 254 nm is effective (however, this short wavelength light is absorbed by the glass substrates 2 and 5). By this step, the contact angle of the glass surface of the semiconductor element mounting area 9 is increased, and the adhesion of the ultraviolet curable resin to the glass substrate 2 is significantly improved. This contact angle is represented by an angle θ of a contact point between the substrate 17 and the resin 18 when the ultraviolet curable resin 18 is dropped on the substrate 17 as shown in FIG. 6, and in this embodiment, the contact angle θ is about 14 °. In the absence of this ultraviolet irradiation, the contact angle θ was about 82 °. Then, a sample in which the semiconductor element was connected to the substrate was prepared for each of the samples, and the defect rate was determined by evaluating the presence or absence of conduction. The defect rate of the adhesiveness of the ultraviolet curable resin was 0.03% for the former. Whereas the latter was 4.6%.
【００１４】このように紫外線硬化樹脂１８を塗布する
前に半導体素子搭載領域９のガラス基板上を主たる発光
波長が２５４ｎｍ付近の短波長を照射することにより、
その紫外線硬化樹脂１８のガラス基板に対する密着性が
顕著に高くなった。By irradiating the semiconductor device mounting region 9 on the glass substrate with a short emission wavelength of about 254 nm as a main emission wavelength before applying the ultraviolet curing resin 18 in this manner,
The adhesion of the ultraviolet curable resin 18 to the glass substrate was significantly increased.
【００１５】次に図４に示すように半導体素子搭載領域
９にディスペンサーを用いて紫外線硬化樹脂１９を塗布
し、そして、図５に示すように半導体素子２０を搭載
し、この半導体素子２０を紫外線硬化樹脂１９によりガ
ラス基板２に固定する。この固定方法によれば、半導体
素子２０は電極パッド２１に、Ｃｒ−Ｃｕ、Ｔｉ−Ｐｄ
等の多層金属膜を被着して、Ａｕ、Ａｇ、Ｃｕ、半田等
から成る金属突起２２を形成した構成であり、この半導
体素子２０の金属突起２２と配線部６とを位置合わせ
し、半導体素子２０の上から加圧治具２３でもって押圧
し、紫外線硬化樹脂１９は押し広げられ、これら金属突
起２２と配線部６とは電気的な接続が得られる。そし
て、この状態のもとで紫外線硬化樹脂１９に紫外線照射
装置１０でもって露光部１６から紫外線照射する。この
照射では、上記水銀キセノンランプ１３の主たる発光波
長のうち３６０ｎｍ付近の波長が最も有効であり、この
波長光はガラス基板２を透過し、このガラス基板２の背
後に配置した凹面鏡である反射板２４でもって反射し、
その反射光が再びガラス基板２を透過し、紫外線硬化樹
脂１９を紫外線照射する。また、露光部１６からの照射
光のうち一部の光は直接樹脂１９を紫外線照射する。Next, as shown in FIG. 4, an ultraviolet curable resin 19 is applied to the semiconductor element mounting area 9 using a dispenser, and a semiconductor element 20 is mounted as shown in FIG. It is fixed to the glass substrate 2 by the cured resin 19. According to this fixing method, the semiconductor element 20 is provided on the electrode pad 21 with Cr—Cu, Ti—Pd
A metal projection 22 made of Au, Ag, Cu, solder, or the like is formed by applying a multilayer metal film such as By pressing from above the element 20 with the pressing jig 23, the ultraviolet curable resin 19 is spread out, and an electrical connection between the metal projection 22 and the wiring portion 6 is obtained. Then, in this state, the ultraviolet curing resin 19 is irradiated with ultraviolet light from the exposure unit 16 by the ultraviolet irradiation device 10. In this irradiation, a wavelength near 360 nm among the main emission wavelengths of the mercury xenon lamp 13 is the most effective, and this wavelength light transmits through the glass substrate 2 and is a concave mirror which is a concave mirror disposed behind the glass substrate 2. Reflected at 24,
The reflected light passes through the glass substrate 2 again and irradiates the ultraviolet curing resin 19 with ultraviolet light. Some of the irradiation light from the exposure unit 16 directly irradiates the resin 19 with ultraviolet light.
【００１６】かくして上記構成によれば、金属突起２２
と配線部６との電気的接続は圧接により行われ、ガラス
基板２上の半導体素子２０の固定は硬化した紫外線硬化
樹脂１９により行われる。Thus, according to the above configuration, the metal projection 22
The electrical connection between the semiconductor device 20 and the wiring portion 6 is made by pressure contact, and the fixing of the semiconductor element 20 on the glass substrate 2 is made by the cured ultraviolet curing resin 19.
【００１７】また、この実施例では、キセノンランプ１
３により照射された紫外線はフレキシブルケーブル１５
を介して照射する構成であり、２５４ｎｍ付近までしか
照射できなかったが、ランプでもって基板に直接照射す
る方法を採用すれば、１８４ｎｍ付近まで照射すること
ができ、これにより、有機物等を更に効率的に分解除去
することができる。In this embodiment, the xenon lamp 1
3 is irradiated with the flexible cable 15
In this configuration, the light can be irradiated only up to about 254 nm. However, if a method of directly irradiating the substrate with a lamp is employed, it is possible to irradiate light up to about 184 nm. It can be decomposed and removed.
【００１８】尚、本発明は上記実施例に限定されるもの
ではなく、本発明の要旨を逸脱しない範囲内で種々の変
更、改良等は何ら差し支えない。It should be noted that the present invention is not limited to the above-described embodiment, and various changes and improvements may be made without departing from the scope of the present invention.
【００１９】[0019]
【発明の効果】以上のように、本発明の半導体素子の実
装方法によれば、透光性基板の上に半導体素子を搭載す
るＣＯＧ方式液晶モジュール等においては、同一の紫外
線照射装置を用いて、その紫外線の主たる２波長の光を
使い分けて、先ず一方の波長光の紫外線を半導体素子搭
載領域に対して露光し、しかも、他方の波長光の紫外線
を光硬化樹脂に露光して固化し、これにより、半導体素
子を透光性基板上に固定せしめることができ、その結
果、従来であれば、両者の紫外線照射を別々の紫外線照
射装置により行われなければならなかったのに対して、
一個の装置だけでよく、その装置の削減に伴う製造コス
トの低減が可能となった。As described above, according to the semiconductor device mounting method of the present invention, in a COG type liquid crystal module or the like in which a semiconductor device is mounted on a translucent substrate, the same ultraviolet irradiation device is used. By selectively using the two main wavelengths of the ultraviolet light, the ultraviolet light of one wavelength light is first exposed to the semiconductor element mounting area, and the ultraviolet light of the other wavelength light is exposed to the photo-curing resin and solidified, Thereby, the semiconductor element can be fixed on the translucent substrate. As a result, in the related art, both ultraviolet irradiations had to be performed by separate ultraviolet irradiation devices,
Only one device is required, and the reduction in manufacturing cost due to the reduction in the number of devices has become possible.
【図１】実施例における液晶パネルの断面図である。FIG. 1 is a sectional view of a liquid crystal panel in an embodiment.
【図２】紫外線照射装置の概略図である。FIG. 2 is a schematic view of an ultraviolet irradiation device.
【図３】実施例における液晶パネルに対する紫外線照射
の方法を示す説明図である。FIG. 3 is an explanatory view showing a method of irradiating a liquid crystal panel with ultraviolet light in an example.
【図４】実施例における液晶パネルに対する紫外線硬化
樹脂の塗布を示す説明図であるFIG. 4 is an explanatory view showing application of an ultraviolet curable resin to a liquid crystal panel in an example.
【図５】実施例における液晶パネルに対する紫外線照射
の方法を示す説明図である。FIG. 5 is an explanatory view showing a method of irradiating a liquid crystal panel with ultraviolet light in an example.
【図６】ガラス基板に対する紫外線硬化樹脂の接触角を
示す説明図である。FIG. 6 is an explanatory diagram showing a contact angle of an ultraviolet curable resin with respect to a glass substrate.
１・・・・・液晶パネル ２、５・・・ガラス基板 ６・・・・・配線部 ９・・・・・半導体搭載領域 １０・・・・紫外線照射装置 １３・・・・キセノンランプ １９・・・・紫外線硬化樹脂 ２４・・・・反射板 1 ··· Liquid crystal panel 2, 5 ··· Glass substrate 6 ··· Wiring unit 9 ··· Semiconductor mounting area 10 ··· UV irradiation device 13 ··· Xenon lamp 19 · ... Ultraviolet curable resin 24 ... Reflector
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−244660（ＪＰ，Ａ) 特開 平３−101141（ＪＰ，Ａ) 特開 平４−72644（ＪＰ，Ａ) 特開 平４−254343（ＪＰ，Ａ) 特開 平３−270145（ＪＰ，Ａ) 特開 平４−109638（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 311 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-63-244660 (JP, A) JP-A-3-101141 (JP, A) JP-A-4-72644 (JP, A) JP-A-4- 254343 (JP, A) JP-A-3-270145 (JP, A) JP-A-4-109638 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60 311
Claims (1)
線照射装置を用いて紫外線を露光し、次いで該半導体素
子搭載領域に光硬化樹脂を塗布し、その塗布した光硬化
樹脂を介して半導体素子を搭載し、然る後上記紫外線照
射装置を用いて透光性基板の半導体素子の非搭載領域を
介して透光性基板の裏側に配置した反射手段に紫外線を
投光し、該反射手段により反射された紫外線を上記塗布
した光硬化樹脂に露光して固化することにより半導体素
子を透光性基板上に固定せしめたことを特徴とする半導
体素子の実装方法。1. A semiconductor device mounting area of a translucent substrate is exposed to ultraviolet light using an ultraviolet irradiation device, and then a photocurable resin is applied to the semiconductor element mounting area, and a semiconductor is applied via the applied photocurable resin. The device is mounted, and thereafter, the ultraviolet irradiation device is used to project ultraviolet light to the reflection means disposed on the back side of the light-transmitting substrate through the non-mounting area of the semiconductor element on the light-transmitting substrate. A method for mounting a semiconductor element, wherein the semiconductor element is fixed on a light-transmitting substrate by exposing and curing the applied photocurable resin with the ultraviolet light reflected by the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25467092A JP3220254B2 (en) | 1992-09-24 | 1992-09-24 | Semiconductor element mounting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25467092A JP3220254B2 (en) | 1992-09-24 | 1992-09-24 | Semiconductor element mounting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06112268A JPH06112268A (en) | 1994-04-22 |
| JP3220254B2 true JP3220254B2 (en) | 2001-10-22 |
Family
ID=17268234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25467092A Expired - Fee Related JP3220254B2 (en) | 1992-09-24 | 1992-09-24 | Semiconductor element mounting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3220254B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008252132A (en) * | 2004-09-15 | 2008-10-16 | Seiko Epson Corp | Method of mounting semiconductor device |
| JP5330012B2 (en) * | 2009-02-09 | 2013-10-30 | リンテック株式会社 | Light irradiation apparatus and light irradiation method |
| JP2014103378A (en) * | 2012-07-06 | 2014-06-05 | Hitachi Chemical Co Ltd | Semiconductor device manufacturing method, semiconductor device and application device |
| JP6145647B2 (en) * | 2013-09-26 | 2017-06-14 | パナソニックＩｐマネジメント株式会社 | Component mounting apparatus and component mounting method |
| JP6629966B2 (en) * | 2016-04-28 | 2020-01-15 | 京セラ株式会社 | Adhesive structure, imaging device, and in-vehicle camera |
| CN111656505B (en) * | 2018-01-25 | 2024-01-30 | 库利克和索夫工业公司 | Soldering tool for soldering machine, soldering machine for soldering semiconductor element and related method |
-
1992
- 1992-09-24 JP JP25467092A patent/JP3220254B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06112268A (en) | 1994-04-22 |
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