JP3219064U - 形状記憶スペーサーファブリック複合材(Shape memory spacer fabric composite) - Google Patents
形状記憶スペーサーファブリック複合材(Shape memory spacer fabric composite) Download PDFInfo
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- JP3219064U JP3219064U JP2018002315U JP2018002315U JP3219064U JP 3219064 U JP3219064 U JP 3219064U JP 2018002315 U JP2018002315 U JP 2018002315U JP 2018002315 U JP2018002315 U JP 2018002315U JP 3219064 U JP3219064 U JP 3219064U
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- spacer fabric
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- 239000004744 fabric Substances 0.000 title claims abstract description 87
- 125000006850 spacer group Chemical group 0.000 title claims abstract description 80
- 239000002131 composite material Substances 0.000 title claims abstract description 64
- 229920000431 shape-memory polymer Polymers 0.000 claims abstract description 30
- 230000008859 change Effects 0.000 claims abstract description 23
- 229920005604 random copolymer Polymers 0.000 claims abstract description 20
- 229920001400 block copolymer Polymers 0.000 claims abstract description 14
- 229920000728 polyester Polymers 0.000 claims abstract description 11
- 229920002635 polyurethane Polymers 0.000 claims abstract description 10
- 239000004814 polyurethane Substances 0.000 claims abstract description 10
- 239000004952 Polyamide Substances 0.000 claims abstract description 4
- 229920002647 polyamide Polymers 0.000 claims abstract description 4
- 229920005862 polyol Polymers 0.000 claims abstract description 4
- 150000003077 polyols Chemical class 0.000 claims abstract description 4
- 230000035939 shock Effects 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 230000000638 stimulation Effects 0.000 claims description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- 230000010261 cell growth Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 claims description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 230000035699 permeability Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 229910052602 gypsum Inorganic materials 0.000 description 6
- 239000010440 gypsum Substances 0.000 description 6
- 210000002449 bone cell Anatomy 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 239000003814 drug Substances 0.000 description 3
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- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 238000005299 abrasion Methods 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
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- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
10a、外部層
10b 外部層
15 導電パターン(ラインパターン層)
15a 素子接続用接点
15b 導線
20 中間層
30 スペーサーファブリック
40 形状記憶高分子層
50 メッシュ(孔)
60 コイル
70 超音波プローブ
Claims (13)
- 表面に形状記憶高分子層を有するスペーサーファブリックである形状記憶スペーサーファブリック複合材であって、前記スペーサーファブリックが2層の外部層及び前記2層の外部層の間に挟まれた中間層からなり、前記形状記憶高分子層は前記2層の外部層及び中間層の表面に覆蓋し、
前記形状記憶高分子層が、ポリエステル、ポリウレタン、ポリアミド、ポリオールからなる群から選ばれる少なくとも1種のランダム共重合体又はブロック共重合体からなり、
前記ランダム共重合体又はブロック共重合体が少なくとも1つの相変化温度を有し、それの1つが40〜80℃の範囲内であり、
前記ランダム共重合体又はブロック共重合体が前記少なくとも1つの相変化温度の最小相変化温度以下において108Pa以上のヤング係数を有し、且つ前記複合材のASTMD790に準拠する曲げ強度が50kg f/cm2以上であること、
を特徴とする形状記憶スペーサーファブリック複合材。 - 前記ランダム共重合体又はブロック共重合体が第1相変化温度及び第2相変化温度を有し、前記第1相変化温度が0〜37℃の範囲内であり、前記第2相変化温度が46〜80℃の範囲内であり、前記第2相変化温度以下で106Pa以上のヤング係数を有し、前記第2相変化温度と前記第1相変化温度との間の温度範囲で106〜108Paのヤング係数を有し、前記第1相変化温度以下で108Pa以上のヤング係数を有する、
ことを特徴とする請求項1記載の形状記憶スペーサーファブリック複合材。 - 前記ランダム共重合体又はブロック共重合体がポリエステル共重合体であることを特徴とする請求項1又は2記載の形状記憶スペーサーファブリック複合材。
- 前記形状記憶高分子層がポリエステルランダム共重合体から構成され、前記ポリエステルは、エチレングリコール、セバシン酸、ヘキサメチレンジアミン(H2N(CH2)6NH2)及びトリメシン酸(trimesic acid)を重合してなるものであることを特徴とする請求項1記載の形状記憶スペーサーファブリック複合材。
- 前記形状記憶高分子層がポリウレタンランダム共重合体からなり、前記ポリウレタンランダム共重合体が2種又は2種以上の互溶又は微互溶性のポリウレタンを混合してなることを特徴とする請求項2記載の形状記憶スペーサーファブリック複合材。
- 前記2層の外部層における一方又は両方の前記形状記憶高分子層の表面に、更にラインパターン層を有し、前記ラインパターン層が導電材からなる導線パターンであり、且つ前記導線パターンが複数の素子接続用接点及び導線を有することを特徴とする請求項1記載の形状記憶スペーサーファブリック複合材。
- 前記ラインパターン層が更に前記外部層の外縁に位置する複数の導電端点を有し、電磁刺激衝撃波が前記ラインパターン層の前記複数の導電端点及び複数の素子接続用接点を経由して、前記形状記憶スペーサーファブリック複合材の使用者に提供されることを特徴とする請求項6記載の形状記憶スペーサーファブリック複合材。
- 前記ラインパターン層が更に前記外部層の外縁に位置する複数の導電端点を有し、前記素子接続用接点と超音波導入素子を接続すると、超音波が前記ラインパターン層の前記複数の導電端点と前記複数の素子接続用接点を経由して、前記形状記憶スペーサーファブリック複合材の使用者に供されることを特徴とする請求項6記載の形状記憶スペーサーファブリック複合材。
- 前記超音波導入素子が超音波プローブであることを特徴とする請求項8記載の形状記憶スペーサーファブリック複合材。
- 前記ラインパターン層が更に前記外部層の外縁に位置する複数の導電端点を有し、前記素子接続用接点と電極パッドを接続すると、パルス波が前記ラインパターン層の前記複数の導電端点及び前記複数の素子接続用接点を経由して、前記形状記憶スペーサーファブリック複合材の使用者に供されることを特徴とする請求項6記載の形状記憶スペーサーファブリック複合材。
- 使用者の特定部位を固定するための固定装置であって、前記使用者の特定部位に請求項1〜10のいずれか一に記載の形状記憶スペーサーファブリック複合材を使用することを特徴とする固定装置。
- 請求項7〜11のいずれか一に記載の形状記憶スペーサーファブリック複合材を使用すると、外部装置から提供される電磁刺激衝撃波、超音波又はパルス波が前記ラインパターン層を経由し、前記使用者の特定部位に経皮導入されて細胞生長を輔助することを特徴とする請求項11記載の固定装置。
- 使用者の特定部位を支持するための支持装置であって、前記使用者の特定部位に請求項1〜11のいずれか一に記載の形状記憶スペーサーファブリック複合材を使用することを特徴とする支持装置。
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