JP3211896U - Metal substrate with LED chip - Google Patents

Metal substrate with LED chip Download PDF

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JP3211896U
JP3211896U JP2017002404U JP2017002404U JP3211896U JP 3211896 U JP3211896 U JP 3211896U JP 2017002404 U JP2017002404 U JP 2017002404U JP 2017002404 U JP2017002404 U JP 2017002404U JP 3211896 U JP3211896 U JP 3211896U
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adhesive
metal substrate
led chip
layer
plating layer
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文夫 大下
文夫 大下
山口 雅弘
雅弘 山口
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Abstract

【課題】後続メーカー等の組立部門の作業性が良くなり作業負担が軽減される構造のLEDチップ付きメタル基板を提供する。【解決手段】コア材1の上下両面に高輝度、高放熱性である調整メッキ層3を施したLED用のメタル基板Pと、その上に搭載されるLEDチップQとからなり、メタル基板は、調整メッキ層の上に溶融により接着材となる金属メッキの接着メッキ層12が形成され、LEDチップには、接着メッキ層に対応しエピタキシャル層13を介してスパッタ装置による接着スパッタ膜17を形成し、接着メッキ層と接着スパッタ膜とが融合され、調整メッキ層とエピタキシャル層との間に溶融による接着材層19が形成されてなる。【選択図】図1An object of the present invention is to provide a metal substrate with an LED chip having a structure in which the workability of an assembly department such as a subsequent manufacturer is improved and the work load is reduced. An LED metal substrate P having an adjustment plating layer 3 having high luminance and high heat dissipation on both upper and lower surfaces of a core material 1 and an LED chip Q mounted thereon, the metal substrate comprising: Then, an adhesive plating layer 12 of metal plating that becomes an adhesive by melting is formed on the adjustment plating layer, and an adhesion sputtered film 17 is formed on the LED chip by a sputtering apparatus via the epitaxial layer 13 corresponding to the adhesive plating layer. Then, the adhesive plating layer and the adhesive sputtered film are fused to form an adhesive layer 19 by melting between the adjustment plating layer and the epitaxial layer. [Selection] Figure 1

Description

この考案は、シリコンウエハ等と同じく、LEDチップごとに切り出して使用されるため、メタルウエハとも称されるLED用のメタル基板に係るもので、これにLEDチップを接着してなるLEDチップ付きメタル基板に関する。   Since this device is cut out and used for each LED chip in the same manner as a silicon wafer or the like, it relates to a metal substrate for LED, also called a metal wafer, and a metal with an LED chip formed by bonding an LED chip to this. Regarding the substrate.

従来、本出願人等においては、高輝度、高放熱を特徴とするLED用のメタル基板を目的として、メッキ手法による研究、開発に努めながら、MoをCu、Cuで挟む形態のコア材であって、両面にその高度等の調整メッキを施したメタル基板を製造し提供してきた(特許文献1)。この明細書ではこのコア材を「DMD」と称する。   In the past, the applicants of the present application have been a core material in which Mo is sandwiched between Cu and Cu while striving for research and development using a plating method for the purpose of an LED metal substrate characterized by high brightness and high heat dissipation. Thus, a metal substrate having both sides of which adjustment plating such as altitude is applied has been manufactured and provided (Patent Document 1). In this specification, this core material is referred to as “DMD”.

DMDがコア材であるメタル基板は、メーカーに提供し多用されており、後続メーカーではLEDチップを接着により組み付ける繊細な工程を経て、LEDが最終的に組み立てられていた。次にメッキ部門と組立部門とが独立に存在する業界の一般的な実情とともに従来例を説明する。   A metal substrate whose core material is DMD is provided to a manufacturer and used extensively. Subsequent manufacturers have finally assembled an LED through a delicate process of assembling an LED chip by bonding. Next, a conventional example will be described together with general circumstances of the industry where the plating department and the assembly department exist independently.

図2は、従来例を示すもので、接着材にAuSnを用いた場合であって、接着態様を順番に説明する。
(イ)の段階
メッキ部門と組立部門が独立しており、本出願人等であるメッキ業者(メッキ部門)がLED用のメタル基板Paを製造し、これをLEDの組立メーカー(組立部門)に発送する。LED用のメタル基板Paは、図示のように、コア材31の両面にNiまたはNi−Pt合金の下地メッキ32,32を介して、その上の表面にAuの調整メッキ層33,33が形成されている状態であった。つまり、Auの上に接着材を付けないでこれを製品として組立メーカーに出荷していた。
FIG. 2 shows a conventional example, where AuSn is used as the adhesive, and the bonding modes will be described in order.
Stage (a) The plating department and the assembling department are independent, and the plating company (plating department), such as the present applicant, manufactures the metal substrate Pa for LED, which is then used as the LED assembly manufacturer (assembling department). Ship. As shown in the figure, the LED metal substrate Pa has Ni or Ni—Pt alloy base platings 32 and 32 formed on both surfaces of the core material 31, and Au adjustment plating layers 33 and 33 are formed thereon. It was in a state that has been. In other words, this was shipped as a product to an assembly manufacturer without attaching an adhesive on Au.

組立メーカーは、接合面にエピタキシャル層(エピ層)35を具えてLEDチップQaを用意していた。しかし、接着材(AuSn)を施すためのメッキ設備を持っていないか、持っていてもその技術に習熟していない一般的な企業である。なお、スパッタ装置は、常備し使うことに習熟しているが、LEDチップにメッキを施すことは専門外なのでできなかった。   The assembly maker prepared the LED chip Qa with the epitaxial layer (epi layer) 35 on the joint surface. However, it is a general company that does not have a plating facility for applying an adhesive (AuSn) or is not familiar with the technology even if it has it. Although the sputtering apparatus is proficient in the regular use, it is impossible to apply plating to the LED chip because it is not a specialist.

(ロ)の段階
組立部門は、スパッタには習熟しているので、メタル基板Paが搬送されてくると、組立メーカーでは、接着材としてAuSnを選定し、スパッタ装置を使って、メタル基板Paの上面調整メッキ層33の上と、LEDチップQaのエビ層35の上とにAuSnの接着スパッタ膜37,38を形成していた。これでは、スタッパ膜37,38が、LEDチップとメタル基板Paとの両方であり、合計でこれには非常に時間がかかっていた。
Stage (b) Since the assembly department is proficient in sputtering, when the metal substrate Pa is transported, the assembly manufacturer selects AuSn as the adhesive and uses the sputtering device to form the metal substrate Pa. Adhesive sputtered films 37 and 38 of AuSn were formed on the upper surface adjustment plating layer 33 and the shrimp layer 35 of the LED chip Qa. In this case, the stapper films 37 and 38 are both the LED chip and the metal substrate Pa, and this takes a very long time in total.

(ハ)の段階
組立メーカーでは、このように接着スパッタ膜37,38をスパッタ形成すると、両方の接着スパッタ膜を接合して一体融合させる。これで、両方の接着スパッタ膜が一体化したAuSnの接着材層39が間に形成されていた。
Stage (c) In the assembly manufacturer, when the sputtered adhesive films 37 and 38 are sputtered as described above, both the sputtered adhesive films are joined and integrally fused. Thus, an AuSn adhesive layer 39 in which both of the adhesive sputtered films are integrated was formed.

特開2012−109288号公報JP 2012-109288 A

スパッタとは、物質に膜を付ける方法であり、メッキ等とは違い、薬品を用いることなく、真空中でのスパッタリング現象を利用する作業である関係で、時間がかかり量産に適しない膜形成手法であるが、エビ層ではこの手法を取らざるを得ないのが実情であった。逆にメタル基板Pには、メッキ層を形成することは、技術、設備等から形成できなかった。   Sputtering is a method of applying a film to a substance. Unlike plating, etc., it is a work that uses a sputtering phenomenon in a vacuum without using chemicals, so it takes time and is not suitable for mass production. However, the actual situation is that the shrimp layer must use this method. On the other hand, forming a plating layer on the metal substrate P cannot be formed from technology, equipment, or the like.

加えて、従来、メッキメーカーは、LEDチップの接着を、もっぱら組立メーカーに任せていたから、組立メーカーでは、時間がかかるスパッタ工程により接着スパッタ膜をメタル基板とLEDチップとの双方に形成していたので、これが組立メーカーに過大な負担を強いることになっていた。   In addition, the plating manufacturer has traditionally left the LED chip to the assembly manufacturer, so the assembly manufacturer has formed a sputtered adhesive film on both the metal substrate and the LED chip by a time-consuming sputtering process. This would put an excessive burden on the assembly manufacturer.

この考案は、上記のような実情に鑑みて、先行する組立メーカー等のメッキ部門としては、後続メーカー等の組立部門の負担軽減を目的として、それに適した形態のメタル基板の提供が可能であり、そのため後続する組立部門の作業性が良くなり作業負担が軽減されることになる構造のLEDチップ付きメタル基板を提供することを課題とした。   In view of the above situation, this device is capable of providing a metal substrate in a form suitable for the purpose of reducing the burden on the assembly department of the subsequent manufacturer, etc. Therefore, an object of the present invention is to provide a metal substrate with an LED chip having a structure in which the workability of the subsequent assembly department is improved and the work load is reduced.

上記の課題を解決するために、この考案は、コア材の上下両面に高輝度、高放熱性である硬度等の調整メッキ層を施したLED用のメタル基板と、その上に搭載されるLEDチップとからなり、メタル基板は、調整メッキ層の上に溶融により接着材となる金属メッキの接着メッキ層が形成され、LEDチップには、該接着メッキ層に対応しエピタキシャル層を介してスパッタ装置による接着スパッタ膜を形成し、前記接着メッキ層と該接着スパッタ膜とが融合され、調整メッキ層とエピタキシシャル層との間に溶融による接着材層が形成されてなることを特徴とするLEDチップ付きメタル基板を提供する。   In order to solve the above-described problems, the present invention is directed to a metal substrate for an LED having an adjustment plating layer such as hardness that has high brightness and high heat dissipation on both upper and lower surfaces of a core material, and an LED mounted thereon. The metal substrate is formed with an adhesive plating layer of metal plating that becomes an adhesive by melting on the adjustment plating layer on the adjustment plating layer, and the LED chip is sputtered via an epitaxial layer corresponding to the adhesion plating layer. An LED chip comprising: an adhesive sputtered film formed by melting the adhesive plated layer and the adhesive sputtered film, and an adhesive layer formed by melting is formed between the adjustment plated layer and the epitaxial layer. Provided metal substrate.

LEDチップ付きメタル基板を上記のように構成したから、メタル基板にはメッキ部門で、メタル基板の製造に付随するメッキ工程で簡単に接着メッキ層を施すことができる。また、そうすることによって、組立部門(例 組立メーカー)では、送られてきたこのメタル基板にLEDチップを接着する場合においては、メタル基板にスパッタ手法により接着材としての接着スパッタ膜を形成する必要性がなく、LEDチップのエピキシャル層に接着スパッタ膜を形成するだけでよくなり、メタル基板からはスタッパ膜の形成から解放される結果、作業時間を半減して組立に臨めることになる。   Since the metal substrate with the LED chip is configured as described above, an adhesive plating layer can be easily applied to the metal substrate in a plating department in a plating process accompanying the manufacture of the metal substrate. In addition, by doing so, the assembly department (eg assembly manufacturer) needs to form an adhesion sputtered film as an adhesive on the metal substrate by the sputtering method when bonding the LED chip to the metal substrate that has been sent. Therefore, it is only necessary to form an adhesion sputtered film on the epitaxial layer of the LED chip. As a result of being released from the formation of the stapper film from the metal substrate, the working time is halved and assembly can be started.

以上説明したように、この考案によれば、企業のメタル基板の製造部門(メッキ部門)としては、その一連のメッキ工程において、接着メッキ層をメッキ追加するだけで済むことになり、そうすると設備的、作業的、能力的にほとんど負担がなく、次工程の組立部門に対してスパッタ作業の負担を半減させ得るので、利益を生み得る商品としてメタル基板を提供でき、殊に、組立部門が客先であるならば、工程短縮とコストダウンを図らせて最終のLED基板の流通を促進し得るという優れた効果がある。   As described above, according to the present invention, the manufacturing department (plating department) of a company's metal substrate only needs to add an adhesive plating layer in the series of plating processes, and the equipment Since there is almost no burden in terms of work and capacity, and the burden of sputtering work can be halved to the assembly department of the next process, metal substrates can be provided as a product that can produce profits. If it is, there exists an outstanding effect that the distribution of the last LED board can be promoted by aiming at process shortening and cost reduction.

この考案を説明するための図であって、層断面で示すメタル基板とLEDチップとの接合要領を説明するフロー図である。なお、層断面中に金属種を例記してある層断面図である。It is a figure for demonstrating this invention, Comprising: It is a flowchart explaining the joining procedure of the metal substrate and LED chip which are shown with a layer cross section. In addition, it is a layer sectional view in which the metal species is illustrated in the layer section. 違った接合例のフロー図を接合要領で示す従来例の層断面説明図である。It is layer cross-sectional explanatory drawing of the prior art example which shows the flowchart of a different joining example in the joining procedure.

この考案においては、メタル基板の製造部門では、メッキ設備により接着メッキ層を形成し、組立部門ではスパッタ装置により接着スパッタ膜を形成するが、両方は、融合により同一金属の接着材層19が生じる場合と、他種合金属接着材19が生じる場合とがある。具体的には、AuSnとSnや、AuとAuSn等では組合せが同種金属となり、AuSnとInや、AuとIn等では組合金属が異種となる。   In this device, in the metal substrate manufacturing department, an adhesive plating layer is formed by a plating facility, and in an assembly department, an adhesive sputtering film is formed by a sputtering device. In some cases, another kind of metal adhesive 19 may be produced. Specifically, the combination metal is the same for AuSn and Sn, Au and AuSn, and the combination metal is different for AuSn and In, Au and In, or the like.

メタル基板Pのコア材1は、例えば、DMD又はCuWであって、次のいずれかであるものとする。
DMD: Moの心材の両面がCu、Cuメッキ又は薄板である複合材
CuW: Wの心材の両面がCu、Cuメッキ又は薄板である複合材又はCuWの合金
The core material 1 of the metal substrate P is, for example, DMD or CuW, and is one of the following.
DMD: Composite material in which both surfaces of Mo core material are Cu, Cu plating or thin plate CuW: Composite material in which both surfaces of W core material are Cu, Cu plating or thin plate, or alloy of CuW

図1は、前記した従来例の説明の図2に対応するもので、(a)、(b)、(c)の段階に分けて説明する。   FIG. 1 corresponds to FIG. 2 in the description of the conventional example described above, and will be described in stages (a), (b), and (c).

(a)の段階
生産部門としてのメッキ業者は、メッキ設備によりメタル基板Pを生産する。メタル基板Pは、前記したコア材1の両面に硬度などの調整メッキ層3,3が下地メッキ2,2を介して形成したものである。コア材1の上面にはAuSnの接着メッキ層12が形成される。この接着メッキ層12付きでメタル基板Pが後続メーカーに発送されることになる。
Stage (a) A plating company as a production department produces a metal substrate P by plating equipment. The metal substrate P is such that adjustment plating layers 3 and 3 such as hardness are formed on both surfaces of the core material 1 through the base platings 2 and 2. An AuSn adhesive plating layer 12 is formed on the upper surface of the core material 1. With this adhesive plating layer 12, the metal substrate P is shipped to a subsequent manufacturer.

一方、メタル基板Pが発送された組立部門としての後続メーカーは、エピタキシャル層13が形成されたLEDチップ付Qを用意している。   On the other hand, a subsequent manufacturer as an assembly department to which the metal substrate P is shipped prepares a Q with LED chip on which the epitaxial layer 13 is formed.

(b)の段階
組立メーカーは、予めメッキメーカーからメタル基板Pの内容を知らされている情報に従い、AuSnに対してAuSnを選択し、スパッタをLEDチップQにのみ施し、これで接着スパッタ膜17が形成される。
Stage (b) The assembly maker selects AuSn for AuSn in accordance with information informed of the contents of the metal substrate P by the plating maker in advance, and performs sputtering only on the LED chip Q, whereby the adhesive sputtered film 17 Is formed.

(c)の段階
組立メーカーでの接合(接着)では、メタル基板Pに対してLEDチップQを取り付けるために、メタル基板Pの接着メッキ層12とLEDチップQの接着スパッタ膜17と融合させ、これで両方共に同一のAuSnの接着材層19が形成される。
Stage (c) In joining (adhesion) at the assembly manufacturer, in order to attach the LED chip Q to the metal substrate P, the metal substrate P is fused with the adhesive plating layer 12 of the metal substrate P and the adhesive sputtered film 17 of the LED chip Q, Thus, the same AuSn adhesive layer 19 is formed in both cases.

メタル基板Pにおいて、Inを接着メッキ層12として形成し、LEDチップQにおいて、Auを接着スパッタ膜17として形成する。そうすると、AuInの合金として接着材層19が形成される。   In the metal substrate P, In is formed as the adhesive plating layer 12, and in the LED chip Q, Au is formed as the adhesive sputtered film 17. Then, the adhesive layer 19 is formed as an AuIn alloy.

P メタル基板
Q LEDチップ
1 芯材
3 調整メッキ層
12 接着メッキ層
13 エピタキシャル層(エピ層)
17 接着スパッタ膜
19 接着材層
P Metal substrate Q LED chip 1 Core material 3 Adjustment plating layer 12 Adhesion plating layer 13 Epitaxial layer (epi layer)
17 Adhesive Sputtered Film 19 Adhesive Layer

Claims (3)

コア材の上下両面に高輝度、高放熱性である硬度等の調整メッキ層を施したLED用のメタル基板と、その上に搭載されるLEDチップとからなり、メタル基板は、調整メッキ層の上に溶融により接着材となる金属メッキの接着メッキ層が形成され、LEDチップには、該接着メッキ層に対応しエピタキシャル層を介してスパッタ装置による接着スパッタ膜を形成し、前記接着メッキ層と該接着スパッタ膜とが融合され、調整メッキ層とエピタキシシャル層との間に溶融による接着材層が形成されてなることを特徴とするLEDチップ付きメタル基板。   It consists of a metal substrate for LED, which has an adjustment plating layer such as hardness that has high brightness and high heat dissipation on both upper and lower surfaces of the core material, and an LED chip mounted on the metal substrate. An adhesive plating layer of metal plating that becomes an adhesive by melting is formed on the LED chip, and an adhesive sputtering film is formed on the LED chip by a sputtering device through an epitaxial layer corresponding to the adhesion plating layer, A metal substrate with an LED chip, wherein the adhesive sputtered film is fused, and an adhesive layer is formed by melting between the adjustment plating layer and the epitaxial layer. 前記接着メッキ層と接着スパッタ膜とがそれぞれAu又はAuSnであることを特徴とする請求項1記載のLEDチップ付きメタル基板。   2. The metal substrate with LED chip according to claim 1, wherein the adhesion plating layer and the adhesion sputtering film are Au or AuSn, respectively. 前記接着メッキ層と接着スパッタ膜との一方がAu又はAuSnの合金であり、他方がInであることを特徴とする請求項1記載のLEDチップ付きメタル基板。













2. The metal substrate with LED chip according to claim 1, wherein one of the adhesive plating layer and the adhesive sputtered film is Au or an alloy of AuSn, and the other is In.













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