JP3206243B2 - Bonding pad and method of forming the same - Google Patents
Bonding pad and method of forming the sameInfo
- Publication number
- JP3206243B2 JP3206243B2 JP23384693A JP23384693A JP3206243B2 JP 3206243 B2 JP3206243 B2 JP 3206243B2 JP 23384693 A JP23384693 A JP 23384693A JP 23384693 A JP23384693 A JP 23384693A JP 3206243 B2 JP3206243 B2 JP 3206243B2
- Authority
- JP
- Japan
- Prior art keywords
- pad
- metal film
- film
- heat
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/05005—Structure
- H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、耐熱性樹脂膜を層間膜
に使用する多層配線基板等に配設されるボンディングパ
ッドの構造及びその形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a bonding pad disposed on a multilayer wiring board or the like using a heat-resistant resin film as an interlayer film and a method of forming the same.
【０００２】近年、情報処理機器の高速化、小型化の要
求に伴い、それらを構成するのに用いられる種々のＬＳ
Ｉにおいては、それ自体を高速化、小型化することの必
要性から、大幅なデバイスの高集積化、微細化が押し進
められている。In recent years, with the demand for higher speed and smaller size of information processing equipment, various LSs used for configuring them have been developed.
In I, the necessity of speeding up and miniaturizing the device itself has drastically increased the degree of integration and miniaturization of devices.
【０００３】また、これらＬＳＩを多数搭載する配線基
板自体も、システム全体の高速化、小型化の必要性か
ら、基板へのチップの直接貼り付け、配線幅の縮小化、
配線層の多層化、及び信号速度の遅延を防ぐための層間
膜の低誘電率化、等の方向で開発が進められている。[0003] In addition, the wiring board itself on which a large number of these LSIs are mounted is also required to directly attach a chip to the board, reduce the wiring width, because of the necessity of increasing the speed and reducing the size of the entire system.
Development has been promoted in the direction of increasing the number of wiring layers and lowering the dielectric constant of an interlayer film for preventing a delay in signal speed.
【０００４】このようなＬＳＩ搭載基板を構成する際に
使用される層間膜には、シリコン酸化膜、アルミナ膜等
の無機膜及び耐熱性樹脂であるポリイミド等の有機膜が
ある。その中で、ポリイミド膜は、有機膜一般の問題点
である高温での安定性で前記無機膜に劣るという欠点は
あるものの、無機膜に比較して低誘電率、低ストレス性
で、且つスピンコーティングで形成される膜であるため
高平坦化性を有する等、層間膜として優れた多くの特徴
を持っている。そのため、多層配線基板の層間膜として
注目され、研究開発が進められている。As an interlayer film used for forming such an LSI mounting substrate, there are an inorganic film such as a silicon oxide film and an alumina film and an organic film such as polyimide which is a heat-resistant resin. Among them, the polyimide film has a disadvantage that it is inferior to the inorganic film in stability at a high temperature, which is a general problem of an organic film, but has a low dielectric constant, a low stress property, and a low spin rate as compared with the inorganic film. Since it is a film formed by coating, it has many excellent features as an interlayer film, such as high flatness. For this reason, attention has been paid to an interlayer film of a multilayer wiring board, and research and development have been promoted.
【０００５】[0005]
【従来の技術】図５は層間膜に耐熱性樹脂であるポリイ
ミドを用いた従来の多層配線基板の模式断面図である。2. Description of the Related Art FIG. 5 is a schematic cross-sectional view of a conventional multilayer wiring substrate using a polyimide which is a heat-resistant resin for an interlayer film.
【０００６】この図に示すように、従来の上記多層配線
基板におけるボンディングパッド68は、例えばシリコン
(Si)基板51上を覆う第１のシリコン酸化膜（SiO2膜）52
上に第１層アルミニウム(Al)合金配線53が形成され、第
１層Al合金配線53の形成面上に第２のSiO2膜54を介して
第２層Al合金配線55が形成され、第２層Al合金配線55の
形成面上に平坦化用の第１のポリイミド層間膜56が形成
され、この第１のポリイミド層間膜56上に、例えば第１
のポリイミド層間膜56に形成したコンタクトホール57を
介して第２層Al合金配線55に接続する第３層Al合金配線
58が形成され、この第３層Al合金配線58形成面上に第２
のポリイミド層間膜59が形成され、この第２のポリイミ
ド層間膜59上に例えば図示されない領域でコンタクトホ
ールを介して第３層Al合金配線58に接続する第４層Al合
金配線60が形成され、この第４層Al合金配線60形成面上
に第３のポリイミド層間膜61が形成された多層配線基板
上に、前記第３のポリイミド層間膜61に形成したコンタ
クトホール62を介して第４層Al合金配線60に接続し、且
つボンディングパッド部64を有する第５層Al合金配線63
を形成し、この第５層Al合金配線63形成面上にポリイミ
ド被覆膜65を形成し、このポリイミド被覆膜65に前記第
５層Al合金配線63のボンディングパッド部64を表出する
パッド開口66を形成し、このパッド開口66内に表出する
上記ボンディングパッド部64上に表面保護及びボンディ
ング性向上のための第２の金属膜67としてチタン(Ti)膜
67A とパラジウム(Pd)膜67B の積層膜を被着して形成し
ていた。As shown in FIG. 1, a bonding pad 68 in the conventional multilayer wiring board is made of, for example, silicon.
(Si) First silicon oxide film (SiO 2 film) 52 covering substrate 51
A first layer aluminum (Al) alloy wiring 53 is formed thereon, and a second layer Al alloy wiring 55 is formed via a second SiO 2 film 54 on a surface on which the first layer Al alloy wiring 53 is formed. A first polyimide interlayer film 56 for flattening is formed on the surface on which the two-layer Al alloy wiring 55 is formed, and, for example, a first polyimide interlayer film 56 is formed on the first polyimide interlayer film 56.
Third-layer Al alloy wiring connected to second-layer Al alloy wiring 55 through contact hole 57 formed in polyimide interlayer film 56
58 is formed, and a second layer is formed on the third layer Al alloy wiring 58 forming surface.
Is formed on the second polyimide interlayer film 59, and a fourth layer Al alloy wiring 60 connected to the third layer Al alloy wiring 58 through a contact hole in a region not shown, for example, is formed on the second polyimide interlayer film 59. On a multilayer wiring board having a third polyimide interlayer film 61 formed on the surface on which the fourth layer Al alloy wiring 60 is formed, a fourth layer Al is formed via a contact hole 62 formed in the third polyimide interlayer film 61. Fifth layer Al alloy wiring 63 connected to alloy wiring 60 and having bonding pad portion 64
A polyimide coating film 65 is formed on the surface of the fifth layer Al alloy wiring 63 on which the bonding pad portion 64 of the fifth layer Al alloy wiring 63 is exposed. An opening 66 is formed, and a titanium (Ti) film is formed on the bonding pad portion 64 exposed in the pad opening 66 as a second metal film 67 for surface protection and bonding property improvement.
It was formed by depositing a laminated film of 67A and a palladium (Pd) film 67B.
【０００７】[0007]
【発明が解決しようとする課題】しかし、上記の方法に
より形成される従来の構造のボンディングパッドは、そ
の上部に金線等のワイヤボンディングを行った際には、
図６の模式工程断面図を参照して以下に述べるような問
題が生じていた。However, the bonding pad having the conventional structure formed by the above-described method is not suitable for performing wire bonding such as a gold wire on the bonding pad.
The following problem has occurred with reference to the schematic process sectional view of FIG.
【０００８】即ち、上記工程により形成される従来のボ
ンディングパッド68は、図６(a) に示すように、ポリイ
ミド層間膜61上にAl合金からなる大面積のパッドパター
ン（ボンディングパッド部）64が直に被着配設され、こ
のAl合金からなるパッドパターン64上にボンディング性
向上のための第２の金属膜（例えばTi膜67A とPd膜との
積層膜）67を被着した構造を有する。そのために従来の
ボンディングパッド68においては、パッドパターン64を
構成するAl合金と、このパッドパターン64が直に被着さ
れるポリイミド層間膜61との間の密着性が良くない（密
着強度が弱い）ことに起因して、図６(b) に示すよう
に、上記ボンディングパッド68上に金線69等を熱圧着手
段等によりボンディングする際、Al合金からなるパッド
パターン64とポリイミド層間膜61との間に熱膨張率の差
によって生ずる応力や、ボンディングワイヤ（金線）69
から及ぼされる引張応力によって、図６(c) に示すよう
に、ポリイミド層間膜61上からのパッド剥がれ70を生
じ、そのためにワイヤボンディング部の断線を誘起し易
くなって、多層配線基板の信頼性が損なわれるという問
題があった。That is, as shown in FIG. 6A, a conventional bonding pad 68 formed by the above process has a large-area pad pattern (bonding pad portion) 64 made of an Al alloy on a polyimide interlayer film 61. It has a structure in which a second metal film (for example, a laminated film of a Ti film 67A and a Pd film) 67 for improving the bonding property is applied on the pad pattern 64 made of Al alloy, which is directly provided and provided. . Therefore, in the conventional bonding pad 68, the adhesion between the Al alloy forming the pad pattern 64 and the polyimide interlayer film 61 on which the pad pattern 64 is directly adhered is poor (weak adhesion strength). Due to this, as shown in FIG. 6B, when bonding a gold wire 69 or the like on the bonding pad 68 by a thermocompression bonding method or the like, the pad pattern 64 made of an Al alloy and the polyimide interlayer film 61 are bonded. The stress caused by the difference in the coefficient of thermal expansion between them and the bonding wire (gold wire) 69
As shown in FIG. 6 (c), the pad peels off 70 from the polyimide interlayer film 61 due to the tensile stress exerted from the substrate, thereby easily causing a break in the wire bonding portion, and increasing the reliability of the multilayer wiring board. There was a problem that was damaged.
【０００９】そこで従来、クロムのポリイミドに対する
密着性が、Al合金のポリイミドに対する密着性よりも優
れているという周知の事実から、前記パッド剥がれを防
止するために、パッド構造を第２の金属膜／Al合金膜／
クロム膜／ポリイミド層とすることも考えられたが、通
常、パッドに使用する金属材料膜は同じ層の配線として
も使用されるので、上記パッド構造にした場合には上記
金属材料膜がAl合金／クロム膜の構造になるため、単に
クロム膜の形成工程が増加するだけでなく、配線のパタ
ーニング工程も複雑になって、信頼性の低下、スループ
ットの低下、コストの増大等を招くという問題があっ
た。Conventionally, the adhesion of chromium to polyimide is better than the adhesion of Al alloy to polyimide. Therefore, in order to prevent the pad from peeling off, the pad structure is changed to a second metal film / polyimide. Al alloy film /
Although a chromium film / polyimide layer was considered, the metal material film used for the pad is usually used as the wiring of the same layer. Therefore, when the pad structure is used, the metal material film is made of an aluminum alloy. / Because of the structure of the chromium film, not only the number of steps of forming the chromium film increases, but also the patterning step of the wiring becomes complicated, resulting in a problem that reliability is reduced, throughput is reduced, and cost is increased. there were.
【００１０】そこで本発明は、ポリイミド等の耐熱性樹
脂層間膜上に形成されるボンディングパッドにおいて、
ワイヤボンディングに際しての、熱膨張率の差により生
ずる応力、及びボンディングワイヤから及ぼされる引張
応力によってパッド剥がれを生ずることがなく、且つ形
成に際して、前記信頼性の低下、スループットの低下、
コストの増大等を招くような工程の複雑化を伴わない、
ボンディングパッドの構造及びその形成方法を提供する
ことを目的とする。Accordingly, the present invention relates to a bonding pad formed on a heat-resistant resin interlayer film such as polyimide.
At the time of wire bonding, the pad does not peel off due to the stress caused by the difference in the coefficient of thermal expansion and the tensile stress exerted from the bonding wire.
Without complicating the process that would lead to an increase in cost,
An object of the present invention is to provide a structure of a bonding pad and a method for forming the same.
【００１１】[0011]
【課題を解決するための手段】上記した課題の解決のた
めに、本件発明では、以下の構成を手段とする。 （第一の手段） 耐熱性樹脂層（１１）上に設けられるボンディングパッ
ド（１２）であって、該耐熱性樹脂層（１１）上に直に
被着され、複数の穴（１９）若しくは溝（２９）状の開
口を有する第１の金属膜のパッド（１４）と、該第１の
金属膜パッド（１４）上を該第１の金属膜パッド（１
４）に直に密着して覆い、且つ該穴（１９）若しくは溝
（２９）状の開口において該第１の金属膜パッド（１
４）下の該耐熱性樹脂層（１１）に直に密着する該第１
の金属膜より耐熱性樹脂に対する密着性の優れた第２の
金属膜（１７）とを有してなるボンディングパッド。以
上の第一の手段において、第１の金属膜が、アルミニウ
ム、アルミニウム合金若しくはタングステン膜からなる
こととしても良い。また、前記第１の金属膜パッドの周
辺部から入り込んで形で形成された複数の溝状開口の一
部若しくは全部が互いに連通し、該溝状開口によって該
第１の金属膜パッドが複数の島状パターンに分割される
こととしても良い。あるいは、ボンディングワイヤの接
続領域下に、前記第２の金属膜の前記第１の金属膜上及
び前記開口下の耐熱性樹脂層上に直に密着する領域の両
方が含まれることとしても良い。 （第二の手段） 耐熱性樹脂層上にボンディングパッドを形成するに際し
て、該耐熱性樹脂層上に、複数の穴若しくは溝状の開口
を有するパッド部を含む第１の金属膜パターンを形成す
る工程と、少なくとも該第１の金属膜パターンのパッド
部上に、該パッド部上を該パッド部に直に密着して覆
い、且つ該穴若しくは溝状の開口において該第１の金属
膜下の該耐熱性樹脂層に直に密着する、該第１の金属膜
よりも耐熱性樹脂に対する密着性の優れた第２の金属膜
を形成する工程を有することを特徴とするボンディング
パッドの形成方法。以上の第二の手段において、前記第
１の金属膜が、アルミニウム、アルミニウム合金若しく
はタングステンからなることとしても良い。Means for Solving the Problems To solve the above-mentioned problems, the present invention adopts the following constitution. (First Means) A bonding pad (12) provided on a heat-resistant resin layer (11), which is directly attached on the heat-resistant resin layer (11) and has a plurality of holes (19) or grooves. A first metal film pad (14) having a (29) -shaped opening; and a first metal film pad (1) on the first metal film pad (14).
4) and directly covers the first metal film pad (1) at the opening in the shape of the hole (19) or groove (29).
4) The first heat-resistant resin layer (11) directly in contact with the lower heat-resistant resin layer (11).
A bonding pad comprising: a second metal film (17) having better adhesion to a heat-resistant resin than the metal film of (1). In the first means described above, the first metal film may be made of an aluminum, aluminum alloy, or tungsten film. In addition, some or all of the plurality of groove-shaped openings which are formed by entering from the peripheral portion of the first metal film pad communicate with each other, and the first metal film pad is formed by the plurality of groove-shaped openings. It may be divided into island patterns. Alternatively, both of the second metal film and the region directly in contact with the heat-resistant resin layer under the opening may be included under the connection region of the bonding wire. (Second Means) When forming a bonding pad on a heat-resistant resin layer, a first metal film pattern including a pad portion having a plurality of holes or groove-shaped openings is formed on the heat-resistant resin layer. A step of covering at least the pad portion of the first metal film pattern with the pad portion directly in close contact with the pad portion, and forming the hole or groove-shaped opening under the first metal film. A method for forming a bonding pad, comprising: forming a second metal film which directly adheres to the heat-resistant resin layer and has better adhesion to the heat-resistant resin than the first metal film. In the second means described above, the first metal film may be made of aluminum, an aluminum alloy, or tungsten.
【００１２】[0012]
【作用】本発明に係る耐熱性樹脂層間膜上のボンディン
グパッドにおいては、ボンディングパッドを、同層の配
線と一体の配線材料である例えばAl合金膜を用い複数の
穴若しくは溝状の開口を有して形成される第１の金属膜
パッドと、この第１の金属膜パッド上をこのパッドの表
面に直に密着して覆い、且つ前記開口部において開口内
に表出する前記パッド下の耐熱性樹脂層間膜に直に密着
する上記第１の金属膜より耐熱性樹脂に対する密着性
（強度）の優れたクロム等の第２の金属膜とで構成す
る。このような構造にすると、ワイヤボンディングに際
して、第１の金属膜パッドと耐熱性樹脂層との間に熱膨
張率の差によって生じ、パッド剥がれを助長するような
応力が、前記パッドに形成された複数の開口によって吸
収されると同時に、前記パッドの表面上を直に密着して
覆い、且つパッドの開口部においてパッド下の耐熱性樹
脂層間膜に強固に密着する第２の金属膜が、上記第１の
金属膜からなるパッドをパッド下の耐熱性樹脂層間膜上
に貼り着ける形になる。そのために、該第１の金属膜パ
ッドの耐熱性樹脂層間膜に対する密着強度は高まり、ワ
イヤボンディング時に、ボンディングワイヤによって及
ぼされる引張応力に十分に耐えるような密着強度にな
る。そしてワイヤボンディング時の、パッド剥がれの発
生が防止される。In the bonding pad on the heat-resistant resin interlayer film according to the present invention, the bonding pad has a plurality of holes or groove-shaped openings using, for example, an Al alloy film which is a wiring material integrated with the wiring of the same layer. A first metal film pad formed by heating and covering the first metal film pad on the surface of the pad in close contact with the first metal film pad; And a second metal film made of chromium or the like having better adhesion (strength) to the heat-resistant resin than the first metal film directly adhering to the conductive resin interlayer film. With such a structure, at the time of wire bonding, a stress is generated in the pad due to a difference in thermal expansion coefficient between the first metal film pad and the heat-resistant resin layer, which promotes pad peeling. The second metal film, which is absorbed by the plurality of openings and directly covers the surface of the pad in close contact with the heat-resistant resin interlayer film under the pad in the opening of the pad, The pad made of the first metal film is stuck on the heat-resistant resin interlayer film below the pad. Therefore, the adhesion strength of the first metal film pad to the heat-resistant resin interlayer film is increased, and the adhesion strength at the time of wire bonding is sufficient to withstand the tensile stress exerted by the bonding wire. In addition, the occurrence of pad peeling during wire bonding is prevented.
【００１３】また、上記第１の金属膜に形成される穴若
しくは溝状開口の幅を、ワイヤボンディングされる金線
のパッドへの接触面積より小さく設定しておけば、ボン
ディング時の圧力は第１の金属膜の変形で受け止められ
るので、耐熱性樹脂層間膜にダメージを及ぼさずに通常
のパッドでのボンディングと同等の金線とパッドとの密
着性（電気的な）が得られる。If the width of the hole or the groove-shaped opening formed in the first metal film is set smaller than the contact area of the gold wire to be wire-bonded to the pad, the pressure at the time of bonding becomes smaller. Since it is received by the deformation of the metal film of No. 1, the adhesion (electrical) between the gold wire and the pad can be obtained, which is equivalent to the bonding with the normal pad, without damaging the heat resistant resin interlayer film.
【００１４】更に、上記ボンディングパッドの形成に
は、従来のボンディングパッド形成に対して、第１の金
属膜パターニング用フオトマスクの改変と、第２の金属
膜の変更だけでよく、工程数の増加も必要ない。従っ
て、本発明がコスト及びスループットに与える悪影響は
殆ど皆無である。Further, the formation of the bonding pad requires only the modification of the first metal film patterning photomask and the modification of the second metal film as compared with the conventional bonding pad formation, and the number of steps is increased. unnecessary. Therefore, the present invention has almost no adverse effect on cost and throughput.
【００１５】[0015]
【実施例】以下本発明を、図示実施例により具体的に説
明する。図１は本発明に係るボンディングパッドの一実
施例の模式断面図、図２及び図３は本発明に係るボンデ
ィングパッドのパターン構造例の模式平面図、図４は本
発明に係るボンディングパターン形成方法の一実施例の
工程断面図である。全図を通じ同一対象物は同一符合で
示す。BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 is a schematic cross-sectional view of one embodiment of a bonding pad according to the present invention, FIGS. 2 and 3 are schematic plan views of a pattern structure example of a bonding pad according to the present invention, and FIG. 4 is a bonding pattern forming method according to the present invention. FIG. 5 is a process sectional view of one embodiment. The same objects are denoted by the same reference symbols throughout the drawings.
【００１６】なお実施例においては、層間膜を構成する
耐熱性樹脂にポリイミドを用いる。図１は、前記従来例
同様に、例えば、Si基板１上に厚さ5000Å程度の第１の
SiO2酸化膜２が形成され、この第１のSiO2酸化膜２上に
厚さ３μｍ程度の第１層アルミニウム−銅(Al-Cu) 合金
配線３が形成され、この第１層Al- Cu合金配線３の形成
面上に厚さ1500Å程度の第２のSiO2膜４を介して厚さ３
μｍ程度の第２層Al- Cu合金配線５が形成され、この第
２層Al- Cu合金配線５の形成面上に厚さ10μｍ程度の表
面が平坦化される第１のポリイミド層間膜６が形成さ
れ、この第１のポリイミド層間膜６上に、第１のポリイ
ミド層間膜６に形成したコンタクトホール７を介して第
２層Al- Cu合金配線５に接続する厚さ３μｍ程度の第３
層Al- Cu合金配線８が形成され、この第３層Al- Cu合金
配線８形成面上に厚さ５μｍ程度の第２のポリイミド層
間膜９が形成され、この第２のポリイミド層間膜９上に
図示されない領域でコンタクトホールを介して第３層Al
- Cu合金配線８に接続する厚さ３μｍ程度の第４層Al-
Cu合金配線10が形成され、この第４層Al- Cu合金配線10
形成面上に厚さ５μｍ程度の第３のポリイミド層間膜11
が形成された多層配線基板の前記第３のポリイミド層間
膜11上に、本発明に係るボンディングパッド18を形成し
た例である。In this embodiment, polyimide is used as a heat-resistant resin constituting the interlayer film. FIG. 1 shows a first example having a thickness of about 5000 ° on a Si substrate 1 as in the conventional example.
An SiO 2 oxide film 2 is formed, and a first layer aluminum-copper (Al—Cu) alloy wiring 3 having a thickness of about 3 μm is formed on the first SiO 2 oxide film 2. On the surface on which the alloy wiring 3 is formed, a second SiO 2 film 4 having a thickness of about 1500 °
A second layer Al-Cu alloy wiring 5 having a thickness of about 10 μm is formed, and a first polyimide interlayer film 6 having a thickness of about 10 μm is flattened on the surface on which the second layer Al-Cu alloy wiring 5 is formed. A third layer of about 3 μm thickness is formed on the first polyimide interlayer film 6 and connected to the second layer Al—Cu alloy wiring 5 through the contact hole 7 formed in the first polyimide interlayer film 6.
A layer Al-Cu alloy wiring 8 is formed, and a second polyimide interlayer film 9 having a thickness of about 5 μm is formed on the surface on which the third layer Al-Cu alloy wiring 8 is formed. 3rd layer Al through a contact hole in a region not shown
-4th layer Al- about 3μm thick connected to Cu alloy wiring 8
The Cu alloy wiring 10 is formed, and the fourth layer Al-Cu alloy wiring 10 is formed.
A third polyimide interlayer film 11 having a thickness of about 5 μm is formed on the formation surface.
This is an example in which a bonding pad 18 according to the present invention is formed on the third polyimide interlayer film 11 of the multilayer wiring board on which is formed.
【００１７】この例においては、多層配線基板における
最上層の配線となる第５層Al- Cu合金配線13（コンタク
トホール12により第４層Al- Cu合金配線10に接続する）
と同層のAl- Cu合金膜により、第５層Al- Cu合金配線13
に接続するボンディング用のパッド部（パッドパター
ン）14が形成され、このパッド部14には、例えば複数の
方形の穴状開口19が所定のピッチでマトリクス状に形成
される。（図２(a) Ａ−Ａ′断面）そして、上記第５層
Al- Cu合金配線13及びパッド部14の形成面上に、例えば
表面保護用のポリイミド被覆膜15を形成し、このポリイ
ミド被覆膜15に前記パッド部14を表出するパッド開口16
を形成した後、このパッド開口16内に表出する前記第５
層Al- Cu合金膜からなるパッド部14上に、ポリイミドに
対する密着性（強度）が前記Al- Cu合金よりも優れた金
属材料の厚さ5000Å程度のクロム(Cr)膜17Aと、従来同
様ボンディング強度を高めるための厚さ3000Å程度のパ
ラジウム(Pd)膜17B とが順に積層された第２の金属膜17
が、前記Al- Cu合金膜からなるパッド部14上を下層のCr
膜17A がパッド部14に直に密着させて覆い、且つ前記パ
ッド部14に設けられている複数の穴状開口19内におい
て、この穴状開口19の底部に表出するパッド部14下の第
３のポリイミド層間膜11に下層のCr膜17A が直に密着す
るように形成された構造を有する。In this example, a fifth-layer Al—Cu alloy wiring 13 (which is connected to a fourth-layer Al—Cu alloy wiring 10 through a contact hole 12) becomes the uppermost wiring in the multilayer wiring board.
5th layer Al-Cu alloy wiring 13 by the same layer of Al-Cu alloy film
A pad portion (pad pattern) 14 for bonding is formed in the pad portion 14. For example, a plurality of rectangular hole-shaped openings 19 are formed in the pad portion 14 in a matrix at a predetermined pitch. (FIG. 2 (a) AA 'cross section) And the fifth layer
On the surface on which the Al-Cu alloy wiring 13 and the pad portion 14 are formed, for example, a polyimide coating film 15 for surface protection is formed, and a pad opening 16 for exposing the pad portion 14 on the polyimide coating film 15 is formed.
After the formation of the fifth, the fifth
A chromium (Cr) film 17A having a thickness of about 5000 mm, which is a metal material having better adhesion (strength) to polyimide than the Al-Cu alloy, is bonded on the pad portion 14 made of the Al-Cu alloy film as in the past. A second metal film 17 in which a palladium (Pd) film 17B having a thickness of about 3000 mm for increasing the strength is sequentially laminated.
Is a lower layer of Cr on the pad portion 14 made of the Al-Cu alloy film.
The film 17A is directly in contact with and covers the pad portion 14, and within the plurality of hole-shaped openings 19 provided in the pad portion 14, a portion under the pad portion 14 exposed at the bottom of the hole-shaped opening 19 is formed. A lower Cr film 17A is formed so as to directly adhere to the third polyimide interlayer film 11.
【００１８】この実施例の構造を有するポリイミド層間
膜上のボンディングパッドにおいては、配線材料のAl-
Cu合金膜で形成される厚いパッド部14にマトリクス状に
形成される多数の穴状開口19により、Al- Cu合金とポリ
イミドとの熱膨張率の差によって生じパッドの剥がれを
助長する応力は緩和されると同時に、前記穴状開口19の
底部に表出するパッド部14下のポリイミド層間膜11と第
２の金属膜17下層のCr膜17A との強い密着性によって前
記パッド部14がポリイミド層間膜11上に強く貼り着けら
れる形になるため、ワイヤボンディングに際しての、ボ
ンディングワイヤによって及ぼされる引っ張り応力によ
って生ずるパッド剥がれは防止される。In the bonding pad on the polyimide interlayer film having the structure of this embodiment, Al-
A large number of hole-shaped openings 19 formed in a matrix in the thick pad portion 14 formed of a Cu alloy film alleviate the stress caused by the difference in the coefficient of thermal expansion between the Al-Cu alloy and the polyimide, which promotes the peeling of the pad. At the same time, due to the strong adhesion between the polyimide interlayer film 11 under the pad portion 14 exposed at the bottom of the hole-shaped opening 19 and the Cr film 17A under the second metal film 17, the pad portion 14 becomes Since the shape is firmly adhered on the film 11, pad peeling caused by tensile stress exerted by the bonding wire during wire bonding is prevented.
【００１９】なお、ボンディングワイヤが接続される領
域の下部には、ポリイミド層間膜に及ぼされるショック
を緩和してダメージを防止し且つ電気的な密着性を高め
る効果を有する厚いAl- Cu合金膜を有する第２の金属膜
／Al- Cu合金膜／ポリイミド膜構成の領域と、ポリイミ
ド層間膜上に直にCr膜が密着しポリイミド層間膜に対す
る密着強度を高める第２の金属膜／ポリイミド膜構成の
領域との両方が含まれることが、一層望ましい。In addition, a thick Al-Cu alloy film having an effect of relaxing shock applied to the polyimide interlayer film to prevent damage and improving electrical adhesion is formed under the region where the bonding wire is connected. The second metal film / polyimide film structure has a second metal film / Al-Cu alloy film / polyimide film structure and a second metal film / polyimide film structure in which a Cr film adheres directly on the polyimide interlayer film to increase the adhesion strength to the polyimide interlayer film. It is even more desirable that both regions be included.
【００２０】図２(a) 〜(c) 及び図３(a) 〜(b) は本発
明に係るボンディングパッドのパターン構造の５例を示
した模式平面図である。図２(a) は、前記実施例で用い
た例えばAl- Cu合金からなる第１の金属膜のパッド部14
に方形の穴状開口19を所定のピッチでマトリクス状に形
成し、このパッド部14上を、このパッド部14の表面に直
に密着し、且つ前記穴状開口19部においてこの穴状開口
19の底部に表出するパッド部14下のポリイミド層に直に
密着する、少なくとも最下層部がCrからなる第２の金属
膜17で覆った構造である。なお、20は金線がボンディン
グされる領域を示しており、この領域内には図示のよう
に前記パッド部14における穴状開口19の部分とその間隔
部の両方が含まれるように、穴状開口19の大きさ及び間
隔を設定することが望ましい。なおまた、13はパッド部
14に接続する配線を示している。FIGS. 2A to 2C and FIGS. 3A and 3B are schematic plan views showing five examples of the bonding pad pattern structure according to the present invention. FIG. 2A shows a pad portion 14 of a first metal film made of, for example, an Al—Cu alloy used in the above embodiment.
A rectangular hole-shaped opening 19 is formed in a matrix at a predetermined pitch, and the pad portion 14 is directly adhered to the surface of the pad portion 14, and the hole-shaped opening 19 is formed at the hole-shaped opening 19.
The structure is such that at least the lowermost layer portion is covered with a second metal film 17 made of Cr, which is directly adhered to the polyimide layer below the pad portion 14 exposed at the bottom of 19. Reference numeral 20 denotes a region where the gold wire is bonded, and a hole is formed in this region so as to include both the portion of the hole-shaped opening 19 in the pad portion 14 and the space therebetween as shown in the figure. It is desirable to set the size and interval of the openings 19. 13 is the pad part
The wiring connected to 14 is shown.
【００２１】図２(b) は、上記パターン例同様の方形の
穴状開口19をパッド部14の金線がボンディングされる領
域20のみに形成した構造である。図２(c) は、パッド部
14に穴状開口19の代わりに長方形の溝状開口29を所定の
列及び行間隔でマトリクス状に形成した例である。この
構成では、金線がボンディングされる領域20の下部には
溝状開口29とその間隔部の両方が含まれるように開口の
溝状幅及び列及び行間隔を設定することが望ましい。FIG. 2B shows a structure in which a rectangular hole-shaped opening 19 similar to the above pattern example is formed only in the region 20 of the pad portion 14 where the gold wire is bonded. Fig. 2 (c) shows the pad
14 is an example in which rectangular groove-like openings 29 are formed in a matrix at predetermined columns and row intervals instead of the hole-like openings 19. In this configuration, it is desirable to set the groove width and the column and row intervals of the opening such that both the groove-shaped opening 29 and the space therebetween are included below the region 20 to which the gold wire is bonded.
【００２２】図３(a) は、パッド部14に周辺部から入り
込んだ複数の溝状開口39が形成された例である。この構
成では、金線がボンディングされる領域20の下部には溝
状開口39とその間隔部が含まれるように溝状開口39の幅
及びピッチを設定することが望ましい。FIG. 3A shows an example in which a plurality of groove-shaped openings 39 are formed in the pad portion 14 from the peripheral portion. In this configuration, it is desirable to set the width and pitch of the groove-like openings 39 so that the groove-like openings 39 and the gaps are included below the region 20 to which the gold wire is bonded.
【００２３】図３(b) は、パッド部14に横方向及び縦方
向に周辺部から入り込んだ溝状開口49A と49B とが形成
され、それらの溝状開口49A と49B が互いに交差連通し
て、パッド部14が複数の島状パターン14P に分割された
例である。この構成では、金線がボンディングされる領
域20の下部に、図示のように島状パターン14P と溝状開
口49A 、49B が含まれるように、溝状開口49A 、49B の
幅及びピッチを設定することが望ましい。In FIG. 3B, groove-like openings 49A and 49B are formed in the pad portion 14 in the lateral and vertical directions from the peripheral portion, and these groove-like openings 49A and 49B intersect and communicate with each other. In this example, the pad section 14 is divided into a plurality of island patterns 14P. In this configuration, the width and pitch of the groove-shaped openings 49A and 49B are set so that the island-shaped pattern 14P and the groove-shaped openings 49A and 49B are included as shown in the figure below the region 20 where the gold wire is bonded. It is desirable.
【００２４】次に本発明に係るボンディングパッドの形
成方法を、図４(a) 〜(d) を参照し、実施例について具
体的に述べる。 図４(a) 参照 前記実施例に示した本発明に係るボンディングパッドを
形成するに際しては、前記実施例に示した下層構造（図
示せず）を有し最上層に第３のポリイミド層間膜11が形
成されこ多層配線基板上に、スパッタリングにより、例
えば Al-1%Cu合金からなる厚さ３μｍ程度のAl- Cu合金
膜113 を形成し、次いで例えばネガレジストの塗布、露
光、現像を行って、前記Al- Cu合金膜113 上に、パッド
部と配線部とに対応するパターン形状を有し、且つ前記
パッド部に対応するパターン部にパッド部に形成しよう
とする前記穴状開口（図１、図２(a) 参照）に対応する
複数の方形の開口パターン23を有するレジストパターン
24を形成する。Next, a method for forming a bonding pad according to the present invention will be described in detail with reference to FIGS. 4 (a) to 4 (d). Referring to FIG. 4 (a), when forming the bonding pad according to the present invention shown in the above-described embodiment, the third polyimide interlayer film 11 having the lower layer structure (not shown) shown in the above-described embodiment and having the uppermost layer is formed. On the multilayer wiring board, an Al-Cu alloy film 113 made of, for example, Al-1% Cu alloy and having a thickness of about 3 μm is formed by sputtering, and then, for example, a negative resist is applied, exposed, and developed. On the Al-Cu alloy film 113, a pattern corresponding to a pad portion and a wiring portion, and the hole-shaped opening to be formed in the pad portion in the pattern portion corresponding to the pad portion (FIG. 1) 2 (a)), a resist pattern having a plurality of rectangular opening patterns 23 corresponding to FIG.
Form 24.
【００２５】図４(b) 参照 次いで、上記レジストパターン24をマスクにし、塩素系
のガスを用いるリアクティブイオンエッチング(RIE) に
より、第５層Al- Cu合金配線13とこの配線に接続し複数
の方形の穴状開口19を有するパッド部14からなる第５層
Al- Cu合金膜パターン113Pを形成する。図には、レジス
トパターン24を除去した後の状態が示されている。Next, referring to FIG. 4B, the fifth layer Al-Cu alloy wiring 13 and a plurality of wirings connected to this wiring are formed by reactive ion etching (RIE) using a chlorine-based gas using the resist pattern 24 as a mask. Fifth layer comprising pad portion 14 having rectangular hole-shaped opening 19
An Al-Cu alloy film pattern 113P is formed. The figure shows a state after the resist pattern 24 has been removed.
【００２６】図４(c) 参照 次いで、上記基板上に例えばネガ型感光性ポリイミド前
駆体膜を10μｍ程度の厚さに塗布し、露光現像によりこ
のポリイミド前駆体膜に前記第５層Al- Cu合金膜パター
ンのパッド部14を表出するパッド開口16を形成した後、
窒素中で焼成を行い、パッド開口16を有するポリイミド
被覆膜15を形成する。Next, a negative photosensitive polyimide precursor film, for example, having a thickness of about 10 μm is applied on the substrate, and the fifth layer Al-Cu is applied to the polyimide precursor film by exposure and development. After forming the pad opening 16 that exposes the pad portion 14 of the alloy film pattern,
Baking is performed in nitrogen to form a polyimide coating film 15 having a pad opening 16.
【００２７】図４(d) 参照 次いで、上記基板上にスパッタリングにより、下層の厚
さ5000Å程度のCr膜17A と上層の厚さ3000Å程度のPd膜
17B とからなる第２の金属膜17を形成し、次いで、通常
のフオトリソグラフィー手段により上記第２の金属膜を
図示のようにポリイミド被覆膜15上に僅かにオーバラッ
プするようにパターニングし、本発明に係るボンディン
グパッドは完成する。なお、上記ボンディングパッドの
パターニングに際しての、Pd膜17B のパターニングには
例えば硝酸水溶液によるウェットエッチング手段が、Cr
膜17A のパターニングには例えば弗酸水溶液によるウェ
ットエッチング手段がそれぞれ用いられる。Next, as shown in FIG. 4D, a lower Cr film 17A having a thickness of about 5000 mm and a Pd film having an upper layer having a thickness of about 3000 mm are formed on the substrate by sputtering.
Forming a second metal film 17 of 17B, and then patterning the second metal film by ordinary photolithography so as to slightly overlap the polyimide coating film 15 as shown in FIG. The bonding pad according to the present invention is completed. For patterning the Pd film 17B at the time of patterning the bonding pad, for example, a wet etching means using a nitric acid aqueous solution is used.
For the patterning of the film 17A, for example, wet etching means using a hydrofluoric acid aqueous solution is used, respectively.
【００２８】[0028]
【発明の効果】以上説明したように、本発明によれば、
耐熱性樹脂の例えばポリイミド層上に配設されるボンデ
ィングパッドのポリイミド層に対する密着強度が従来に
比べ大幅に向上し、上記ボンディングパッド上に熱圧着
等の方法によりボンディングワイヤをボンディングする
際に、ボンディングワイヤによって及ぼされる引っ張り
応力によってパッド剥がれが発生するのが防止される。As described above, according to the present invention,
For example, the bonding strength of a bonding pad provided on a polyimide layer of a heat-resistant resin to the polyimide layer is greatly improved as compared with the conventional case, and when a bonding wire is bonded on the bonding pad by a method such as thermocompression bonding, bonding is performed. Pad peeling is prevented from occurring due to the tensile stress exerted by the wire.
【００２９】従って本発明は、耐熱性樹脂の例えばポリ
イミドを層間膜に用いる多層配線基板上に高い信頼性を
有するボンディングパッドの形成を可能にし、ＭＣＳ
（Multi-chip搭載基板）等のＬＳＩ設置基板の歩留り及
び信頼性の改善に寄与するところが大きい。Therefore, the present invention makes it possible to form a highly reliable bonding pad on a multilayer wiring board using a heat-resistant resin such as polyimide as an interlayer film,
It greatly contributes to the improvement of the yield and reliability of LSI-installed substrates such as (Multi-chip mounting substrate).
【図１】 本発明に係るボンディングパッドの一実施例
の模式断面図FIG. 1 is a schematic sectional view of one embodiment of a bonding pad according to the present invention.
【図２】 本発明に係るボンディングパッドのパターン
構造の模式平面図（その１）FIG. 2 is a schematic plan view (part 1) of a pattern structure of a bonding pad according to the present invention.
【図３】 本発明に係るボンディングパッドのパターン
構造の模式平面図（その２）FIG. 3 is a schematic plan view of a pattern structure of a bonding pad according to the present invention (part 2).
【図４】 本発明に係るボンディングパッドの形成方法
の一実施例の工程断面図FIG. 4 is a process sectional view of one embodiment of a bonding pad forming method according to the present invention.
【図５】 従来構造の模式断面図FIG. 5 is a schematic sectional view of a conventional structure.
【図６】 従来構造の問題点を示す模式工程断面図FIG. 6 is a schematic process sectional view showing a problem of the conventional structure.
１ Ｓｉ基板 ２ 第１のSiO2膜 ３ 第１層Al-Cu 合金配線 ４ 第２のSiO2膜 ５ 第２層Al-Cu 合金配線 ６ 第１のポリイミド層間膜 ７ コンタクトホール ８ 第３層Al-Cu 合金配線 ９ 第２のポリイミド層間膜 10 第４層Al-Cu 合金配線 11 第３のポリイミド層間膜 12 コンタクトホール 13 第５層Al-Cu 合金配線 14 パッド部 15 ポリイミド被覆膜 16 パッド開口 17 第２の金属膜 17A Cr膜 17B Pd膜 18 本発明に係るボンディングパッド 19 穴状開口 20 金線のボンディングされる領域 29 溝状開口 39 パッド部の周辺部から入り込んで形の溝状開口 49A 、49B パッド部の周辺部から縦方向と横方向に入り
込んだ形の溝状開口1 Si substrate 2 first SiO 2 film 3 first layer Al-Cu alloy wiring 4 second SiO 2 film 5 second layer Al-Cu alloy wiring 6 first polyimide interlayer film 7 contact hole 8 third layer Al -Cu alloy wiring 9 Second polyimide interlayer 10 Fourth layer Al-Cu alloy wiring 11 Third polyimide interlayer 12 Contact hole 13 Fifth layer Al-Cu alloy wiring 14 Pad section 15 Polyimide coating 16 Pad opening 17 Second metal film 17A Cr film 17B Pd film 18 Bonding pad according to the present invention 19 Hole-shaped opening 20 Gold wire bonding area 29 Groove-shaped opening 39 Groove-shaped opening 49A penetrating from the periphery of pad portion 49A , 49B Groove-shaped openings that penetrate vertically and horizontally from the periphery of the pad
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭55−120162（ＪＰ，Ａ) 特開 昭59−4036（ＪＰ，Ａ) 特開 昭61−5561（ＪＰ，Ａ) 特開 平３−19248（ＪＰ，Ａ) 特開 平３−34339（ＪＰ，Ａ) 特開 平５−136198（ＪＰ，Ａ) 特開 平６−196525（ＪＰ，Ａ) 特開 平２−63127（ＪＰ，Ａ) 特開 昭62−1249（ＪＰ，Ａ) 特開 昭61−218145（ＪＰ，Ａ) 特開 平５−234998（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 H01L 21/3205 H01L 21/768 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-55-120162 (JP, A) JP-A-59-4036 (JP, A) JP-A-61-5561 (JP, A) JP-A-3-3 19248 (JP, A) JP-A-3-34339 (JP, A) JP-A-5-136198 (JP, A) JP-A-6-196525 (JP, A) JP-A-2-63127 (JP, A) JP-A-62-1249 (JP, A) JP-A-61-218145 (JP, A) JP-A-5-234998 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60 H01L 21/3205 H01L 21/768
Claims (6)
ンディングパッド（１２）であって、該耐熱性樹脂層
（１１）上に直に被着され、複数の穴（１９）若しくは
溝（２９）状の開口を有する第１の金属膜のパッド（１
４）と、該第１の金属膜パッド（１４）上を該第１の金
属膜パッド（１４）に直に密着して覆い、且つ該穴（１
９）若しくは溝（２９）状の開口において該第１の金属
膜パッド（１４）下の該耐熱性樹脂層（１１）に直に密
着する該第１の金属膜より耐熱性樹脂に対する密着性の
優れた第２の金属膜（１７）とを有してなることを特徴
とするボンディングパッド。1. A bonding pad (12) provided on a heat-resistant resin layer (11), which is directly attached on the heat-resistant resin layer (11), and has a plurality of holes (19) or grooves (1). A pad (1) of a first metal film having a 29-shaped opening
4), the first metal film pad (14) is directly in close contact with and covered with the first metal film pad (14), and the hole (1) is formed.
9) Or the adhesiveness to the heat-resistant resin from the first metal film which directly adheres to the heat-resistant resin layer (11) under the first metal film pad (14) at the opening in the shape of the groove (29). A bonding pad comprising an excellent second metal film (17).
ルミニウム合金若しくはタングステン膜からなることを
特徴とする請求項１記載のボンディングパッド。2. The bonding pad according to claim 1, wherein the first metal film is made of an aluminum, aluminum alloy, or tungsten film.
り込んで形で形成された複数の溝状開口の一部若しくは
全部が互いに連通し、該溝状開口によって該第１の金属
膜パッドが複数の島状パターンに分割されていることを
特徴とする請求項１または２記載のボンディングパッ
ド。 3. A part or all of a plurality of groove-shaped openings formed to enter from a peripheral portion of the first metal film pad communicate with each other, and the first metal film pad is formed by the groove-shaped openings. 3. The bonding pad according to claim 1 , wherein the bonding pad is divided into a plurality of island patterns.
記第２の金属膜の前記第１の金属膜上及び前記開口下の
耐熱性樹脂層上に直に密着する領域の両方が含まれるこ
とを特徴とする請求項１または２または３記載のボンデ
ィングパッド。4. The semiconductor device according to claim 1 , wherein both of the second metal film and the heat-resistant resin layer directly under the opening are included under the connection region of the bonding wire. The bonding pad according to claim 1, 2 or 3, wherein
形成するに際して、該耐熱性樹脂層上に、複数の穴若し
くは溝状の開口を有するパッド部を含む第１の金属膜パ
ターンを形成する工程と、少なくとも該第１の金属膜パ
ターンのパッド部上に、該パッド部上を該パッド部に直
に密着して覆い、且つ該穴若しくは溝状の開口において
該第１の金属膜下の該耐熱性樹脂層に直に密着する、該
第１の金属膜よりも耐熱性樹脂に対する密着性の優れた
第２の金属膜を形成する工程を有することを特徴とする
ボンディングパッドの形成方法。 5. A step of forming a first metal film pattern including a pad portion having a plurality of holes or groove-shaped openings on the heat-resistant resin layer when forming a bonding pad on the heat-resistant resin layer. And at least on the pad portion of the first metal film pattern, covering the pad portion in close contact with the pad portion, and at the hole or groove-shaped opening under the first metal film. A method for forming a bonding pad, comprising: forming a second metal film which directly adheres to a heat-resistant resin layer and has better adhesion to a heat-resistant resin than the first metal film.
ルミニウム合金若しくはタングステンからなることを特
徴とする請求項５記載のボンディングパッドの形成方
法。 Wherein said first metal film, aluminum, a method of forming the bonding pad of claim 5, wherein a made of an aluminum alloy or tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23384693A JP3206243B2 (en) | 1993-09-20 | 1993-09-20 | Bonding pad and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23384693A JP3206243B2 (en) | 1993-09-20 | 1993-09-20 | Bonding pad and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0794549A JPH0794549A (en) | 1995-04-07 |
| JP3206243B2 true JP3206243B2 (en) | 2001-09-10 |
Family
ID=16961490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23384693A Expired - Lifetime JP3206243B2 (en) | 1993-09-20 | 1993-09-20 | Bonding pad and method of forming the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3206243B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002324798A (en) * | 2001-04-25 | 2002-11-08 | Nissan Motor Co Ltd | Electrode structure |
| JP2003045958A (en) * | 2001-07-27 | 2003-02-14 | Denso Corp | Semiconductor device and method of manufacturing same |
| JP4641396B2 (en) * | 2004-09-02 | 2011-03-02 | Ｏｋｉセミコンダクタ株式会社 | Thin film capacitor and manufacturing method thereof |
| WO2006082817A1 (en) * | 2005-02-04 | 2006-08-10 | Nec Corporation | Capacitor and wiring board incorporating same |
| DE102005009358B4 (en) | 2005-03-01 | 2021-02-04 | Snaptrack, Inc. | Solderable Contact and Method of Manufacture |
| JP6141735B2 (en) * | 2013-09-26 | 2017-06-07 | 京セラ株式会社 | Piezoelectric actuator substrate, liquid ejection head using the same, and recording apparatus |
| JP2017050358A (en) | 2015-08-31 | 2017-03-09 | トヨタ自動車株式会社 | Semiconductor device |
| JP2020194875A (en) * | 2019-05-28 | 2020-12-03 | 京セラ株式会社 | Wiring board and electronic component mounting structure |
-
1993
- 1993-09-20 JP JP23384693A patent/JP3206243B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0794549A (en) | 1995-04-07 |
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