JP3195843B2 - High heat dissipation type semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high heat radiation type semiconductor device for efficiently radiating heat generated by a semiconductor element.

[0002]

2. Description of the Related Art When a semiconductor device operates, it consumes power and its temperature rises. Particularly, for example, a semiconductor element having a large power consumption, such as a power transistor element, has a large temperature rise. Therefore, various heat radiating means are attached to the package to prevent the temperature of the semiconductor element from rising as a high heat radiation type semiconductor device. ing.

FIG. 5 shows a cross section of a conventional high heat radiation type semiconductor device having a heat radiator or the like as a heat radiation means. In the figure, 1 is an IC chip as a semiconductor element, 2 is a substrate having an opening 2a for arranging an IC chip in the center thereof, and holding a lead (not shown) on its outer surface, and 3 is a substrate 2
A bonding wire 4 for electrically connecting the upper lead to the IC chip 1 is attached to one side of the substrate 2, and the tower mounting portion 4 of the IC chip 1 is located at a position facing the opening 2 a of the substrate 2.
The heat radiator 5 having a large thermal conductivity in which a is formed is a material having a large heat conductivity attached to the other surface of the heat radiator 4 in order to further dissipate heat from the heat radiator 4. A fin member, 6 is an adhesive tape as a joining means for joining the substrate 2 and the heat radiator 4, and 7 is connected to a lead of the substrate 2 so that when the semiconductor device is mounted on a printed board or the like, the IC chip 1 An external terminal 8 for electrically connecting the semiconductor device 1 to an external circuit, and a cover member 8 for closing the opening 2a of the substrate 2 and protecting the semiconductor element 1 inside. Here, the fin member 5
The lid member 8 is fixed to the heat radiating plate 4 and the substrate 2 with an adhesive tape 6, for example.

Next, the operation of the semiconductor device will be described.
This semiconductor device is mounted on a printed circuit board (not shown) via external terminals 7, and an external circuit (not shown) and the IC chip 1 are electrically connected via the external terminals 7, the leads of the substrate 2 and the bonding wires 3. Connected. Then, an input signal is input from an external circuit, and the IC chip 1 operates. At this time, heat is generated from the IC chip 1. Then, although the temperature of the IC chip 1 rises, the heat generated in the IC chip 1 is transmitted to the fin member 5 via the heat radiator 4 and the heat radiator 4, and the heat is radiated from the heat radiator 4 and the fin member 5 to the outside. Therefore, the temperature rise of the IC chip 1 is suppressed.

[0005]

However, the temperature of the radiator 4 rises due to the heat radiation from the IC chip 1 and a temperature difference occurs between the radiator 4 and the substrate 2. There is a difference in the amount of expansion. For this reason, thermal stress occurs between the radiator 4 and the substrate 2, and a peeling phenomenon occurs between the substrate 2 and the adhesive tape 6, between the radiator 4 and the adhesive tape 6, or within the adhesive tape 6, and the radiator 4 There was a problem that the substrate 2 was dropped from the substrate 2 . Also, since the gap is formed between the substrate 2 and the heat radiating member 4, heat transferred by convection and radiation from the IC chip 1 on the substrate 2 side is not transmitted to the heat radiating member 4 side, the temperature of the IC chip 1 near the substrate 2 There was a problem that would rise .

SUMMARY OF THE INVENTION An object of the present invention is to provide a high heat radiation type semiconductor device in which a heat radiator does not fall off a substrate and a temperature rise of the substrate can be prevented. With the goal.

[0007]

According to a first aspect of the present invention, there is provided a substrate which holds a lead for connection with a semiconductor element and has an opening for arranging the semiconductor element in the center thereof. A radiator having a large thermal conductivity that is attached to one surface of the substrate and has a mounting portion for the semiconductor element formed at a position facing the opening of the substrate, and dissipates heat generated from the semiconductor element to the outside. In the high heat radiation type semiconductor device having the above, the tower mounting portion of the heat radiator is formed to protrude in a convex shape, and the tower mounting portion is fitted on the heat radiator side of the substrate at a position facing the opening and then caulked . And a heat radiator mounting portion in which a hole for mounting the heat radiator is formed.

[0008]

According to a second aspect of the present invention, there is provided a substrate which holds a lead for connection with a semiconductor element and has an opening for arranging the semiconductor element in the center thereof, A high heat radiation type having a mounting portion for the semiconductor element formed at a position facing the opening of the substrate and having a large heat conductivity for dissipating heat generated from the semiconductor element to the outside. In a semiconductor device, a substrate and a heat radiator are joined by joining means, and at least two sets of concave and convex portions are provided so as to be fitted to the substrate and the heat radiator at the joint.

According to a third aspect of the present invention, there is provided a substrate which holds a lead for connection with a semiconductor element and has an opening for arranging the semiconductor element in the center thereof, A high heat radiation type having a mounting portion for the semiconductor element formed at a position facing the opening of the substrate and having a large heat conductivity for dissipating heat generated from the semiconductor element to the outside. In a semiconductor device, a board and a radiator are joined by joining means, and at least a pair of press-fit pins separated from each other are inserted into the board and the radiator from the substrate or the radiator through the joint. .

[0011]

[Action] or after the first aspect of the invention, I write fitted tower mounting portion of the radiator to the hole provided on the heat dissipating member mounting portion of the substrate of the present invention
In short , the radiator is attached to one side of the substrate. In this case, since the hole of the radiator mounting portion is located at a position facing the opening of the substrate, the semiconductor element is easily mounted on the tower mounting portion of the radiator through this opening. Then, when the semiconductor device is mounted on a printed circuit board or the like and the semiconductor element operates, heat generated from the semiconductor element is released to the outside via the tower mounting portion of the radiator. Further, heat transmitted from the semiconductor element to the substrate by radiation or convection is also transmitted to the tower mounting portion of the radiator fitted into the substrate, and is then released to the outside. Furthermore, the tower mounting part of the radiator was fitted into the hole of the substrate
The heat sink is firmly attached to the board
As a result, the radiator is prevented from falling off, and
Heat transfer is also good.

[0012]

In the second aspect of the present invention, the radiator is joined to the radiator by joining the substrate and the radiator by joining means, and fitting the uneven portion between the substrate and the radiator at the joint. Installed on one side. Even if the semiconductor element operates and the heat generated from the semiconductor element moves to the radiator side and the temperature of the radiator rises, and a temperature difference occurs between the substrate and the radiator 4, at least the substrate and the radiator are at least Since the two sets of concave and convex portions are fitted and firmly connected, there is no difference in the amount of thermal expansion between the two sets. Therefore, no peeling occurs at the joint between the substrate and the heat radiator via the joining means.

According to a third aspect of the present invention , the substrate and the heat radiator are joined by a joining means, and the substrate and the heat radiator are joined by penetrating this joint with at least a pair of press-fit pins separated from each other. Thus, the heat radiator is attached to one surface of the substrate. Therefore, even if a temperature difference occurs between the substrate and the heat radiator 4, the substrate and the heat radiator are firmly connected via the press-fit pins, so that there is no difference in the amount of thermal expansion between the two and the heat radiator 4 is connected through the joining means. No peeling occurs at the joint between the substrate and the radiator.

[0015]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. Example Figure 1 is a sectional view of a semiconductor device in reference example of the present invention. In the drawing, the same or corresponding portions as those of the conventional semiconductor device shown in FIG. 5 are denoted by the same reference numerals, and description thereof will be omitted.

In FIG. 1, reference numeral 10 denotes an opening 10a for arranging an IC chip at the center thereof, and a lead (not shown) for electrical connection with the IC chip 1 is held on the upper surface thereof. A substrate having a radiator mounting portion 10b on the side thereof and a hole 10c formed at a position facing the opening 10a of the radiator mounting portion 10b. Reference numeral 11 denotes that the tower mounting portion 11a of the IC chip 1 has a convex shape. This is a heat radiator having high thermal conductivity, which is formed to protrude and is attached to one surface side of the substrate 10 by press-fitting the tower mounting portion 11a into the hole 10c of the substrate 10. The fin member 5 is attached to the lower surface of the radiator 11, the external terminal 7 is attached to the upper surface of the substrate 10, and the opening 1 of the substrate 10 is provided.
A cover member 8 is attached to 0a, and the cover member 8 protects the IC chip 1 in the opening 10a mounted on the tower mounting portion 11a of the radiator 11.

Next, the operation of the semiconductor device will be described. This semiconductor device is mounted on a printed circuit board via the external terminals 7, and the external circuit and the IC chip 1 are connected to the external terminals 7,
They are electrically connected via the leads of the substrate 10 and the bonding wires 3. Then, an input signal is input from an external circuit, and the IC chip 1 operates. At this time, this IC
Heat is generated from the chip 1. As a result, the temperature of the IC chip 1 rises, but the heat generated by the IC chip 1 is dissipated by the radiator 11 and the fin member 5 through the radiator 11.
And the heat is easily released to the outside from the radiator 11 and the fin member 5, and the temperature rise of the IC chip 1 is suppressed. In addition, the radiation from the IC chip 1 to the substrate
The heat transmitted to the side is also easily transmitted to the tower mounting portion 11a side of the radiator 11 via the radiator mounting portion 10b of the substrate 10, and
The temperature rise of the substrate 10 near the C chip 1 is also suppressed.

Further, the heat radiating body 11 is
c, the tower mounting portion 11a is mounted by press-fitting, so that even if a temperature difference occurs between the substrate 10 and the radiator 11, the radiator 11 has a larger coefficient of thermal expansion than the substrate 10. The thermal expansion of the mounting portion 11a of the heat sink 11
The hole 10c is received by the zero hole 10c, and there is no difference in thermal expansion between the fitting portion of the substrate 10 and the heat radiator 11. Also, substrate 1
Even when the heat radiator 11 has a smaller coefficient of thermal expansion than 0, since the fitting portion between the substrate 10 and the heat radiator 11 is relatively small in size, there is almost no difference in thermal expansion between them. Therefore, as in the conventional semiconductor device in which the substrate 2 and the heat radiator 4 are bonded with the adhesive tape 6, the heat radiator 4 falls off from the substrate 2 or heat is accumulated in the substrate 2 and the temperature of the substrate 2 rises. There is no inconvenience.

Embodiment 1 FIG. 2 is a sectional view of a semiconductor device according to an embodiment of the first invention of the present invention. The semiconductor device of the first embodiment is
After the tower mounting portion 11a of the heat radiator 11 of the semiconductor device of the reference example is press-fitted into the hole 10c of the substrate 10, the tower mounting portion 11a
It is a crimped version of a. Tower mounting portion 11 of this heat radiator 11
The heat radiator 11 is more firmly attached to the substrate 10 by caulking the hole 10c of FIG.
Dropping from zero is further prevented. Further, since the adhesion between the tower mounting portion 11a of the radiator 11 and the radiator mounting portion 10b of the substrate 10 is improved, heat transport from the substrate 10 side to the radiator 11 side is facilitated, and the temperature of the substrate 10 further increases. Can be suppressed.

Embodiment 2 FIG. FIG. 3 is a sectional view of a semiconductor device according to an embodiment of the second invention of the present invention. In the drawing, reference numeral 12 denotes an I
It has an opening 12a for C chip placement,
A substrate holding leads (not shown) for electrical connection to the C chip 1 and having two pairs (four) of recesses 12b formed in front, rear, left and right positions sandwiching the opening 12a on the lower surface thereof; Reference numeral 13 denotes a lower surface of the substrate 12 on the side of the concave portion 12b via an adhesive tape 6, and a tower mounting portion 13a of the IC chip 1 is formed on a surface of the substrate 12 facing the opening 12a. Convex part 13 fitted into concave part 12b
This is a heat radiator having good thermal conductivity in which b is formed. The other configuration is the same as that of the semiconductor device of the above reference example .

In this semiconductor device, the substrate 12 and the radiator 13
Are bonded by an adhesive tape 6, and thermal stress based on the difference in the coefficient of thermal expansion between the substrate 12 and the radiator 13 is caused by the operation of the IC chip 1. Since the concave portion 12b and the convex portion 13b of the heat radiator 13 are fitted to each other and the substrate 12 and the heat radiator 13 are mechanically and firmly connected, the two expand integrally and thermally. No thermal stress occurs at the joint between the heat sink 13 and the heat radiator 13 via the adhesive tape 6. Therefore, the substrate 12
And the adhesive tape 6, or between the heat radiator 13 and the adhesive tape 6.
No peeling phenomenon due to thermal stress occurs in the gap or in the adhesive tape 6, and the heat radiator 13 does not fall off the substrate 12. Further, since there is no gap between the substrate 12 and the heat radiator 13, heat transmitted from the IC chip 1 to the substrate 2 by convection or radiation is also sufficiently transmitted to the heat radiator 13 and the temperature of the substrate 12 rises. There is no such thing as.

The recess 12b of the substrate 12 and the radiator 13
It is sufficient that at least two sets (two concave portions 12b and two convex portions 13b) are provided at positions separated from each other, and the concave portion 12b of the substrate 12 and the convex portion 13b of the heat radiator 13 may be reversed. Of course.

In the case where the radiator 13 and the fin member 5 are joined via the adhesive tape 6, a difference in temperature causes a difference in the amount of thermal expansion. Although a phenomenon may occur, also in this case, at least two sets of concave and convex portions are provided at a joint portion between the heat radiator 13 and the fin member 5 via the adhesive tape 6,
If the concave and convex portions are fitted, the same effect as in the case of the substrate 12 and the heat radiator 13 can be obtained.

Embodiment 3 FIG. FIG. 4 is a sectional view of a semiconductor device according to a third embodiment of the present invention. In the figure, 14 is I in the center
It has an opening 14a for C chip placement,
Two pairs (four) of through-holes 14b are formed to hold leads (not shown) for electrical connection to the C-chip 1 and vertically penetrate the opening 14a at front, rear, left and right positions. The substrate 15 is attached to the lower surface of the substrate 14 with the adhesive tape 6 therebetween. The tower mounting portion 15a of the IC chip 1 is formed on the surface of the substrate 14 facing the opening 14a. A heat radiator having a high thermal conductivity and a recess 15b having the same size as the through hole 14b is formed at a position facing the through hole 14b.
b and a pin pressed into the recess 15b of the heat radiator 15. The other configuration is the same as that of the semiconductor device of the above reference example .

In this semiconductor device, as in the semiconductor device of the second embodiment , thermal stress is likely to be generated at the joint between the substrate 14 and the radiator 15 via the adhesive tape 6.
Since the heat radiator 15 and the heat radiator 15 are firmly connected to each other via the pin 16, no large thermal stress is generated at this joint. Therefore, no peeling phenomenon occurs at the joint between the substrate 14 and the radiator 15 via the adhesive tape 6, and the radiator 13 does not fall off the substrate 14. Further, the heat transmitted from the IC chip 1 to the substrate 14 is sufficiently transmitted to the radiator 15 side, so that the temperature of the substrate 14 does not increase.

The through hole 14b of the substrate 14 and the radiator 1
It is sufficient that at least two sets (two through holes 14b and two recesses 15b) are provided at positions separated from the five recesses 15b, and the through hole 14b of the substrate 14 and the recess 15b of the heat radiator 15 may be reversed. Of course.

Further, in each of the above embodiments, the adhesive tape 6 is used as the joining means. However, the joining means is not limited to the adhesive tape 6, but may be an adhesive, an adhesive or the like.

[0028]

Since the present invention is configured as described above, it has the following effects.

According to the first aspect of the present invention, there is provided a substrate on which a lead for holding a connection with a semiconductor element is held, and an opening for arranging the semiconductor element is formed in the center thereof, and one surface of the substrate. Side, and a mounting portion of the semiconductor element is formed at a position facing the opening of the substrate,
In a high heat radiation type semiconductor device having a heat radiator having a large thermal conductivity for dissipating heat generated from the semiconductor element to the outside, a tower mounting portion of the heat radiator is formed to project in a convex shape,
In addition, since the tower mounting portion is fitted on the heat radiator side of the substrate at a position facing the opening and then caulked , and the heat radiator mounting portion having the hole for mounting the heat radiator is provided, the substrate and the heat radiator are provided. Even if there is a temperature difference between the bodies , the radiator and the board are firmly
And coupled to the heat dissipation body is dropped or if et de substrate, is not the temperature of the substrate or rises.

[0030]

According to the second aspect of the present invention , a substrate for holding a connection lead for connecting to a semiconductor element and having an opening for arranging the semiconductor element in the center thereof, and one surface of the substrate Side, and a mounting portion of the semiconductor element is formed at a position facing the opening of the substrate,
In a high heat dissipation type semiconductor device having a heat radiator having a large thermal conductivity for dissipating heat generated from the semiconductor element to the outside, the substrate and the heat radiator are joined by joining means, Since at least two sets of projections and depressions fitted to each other are provided on the body, even if a temperature difference occurs between the substrate and the heat dissipation body, the heat dissipation body and the board are firmly coupled via the projections and depressions, There is no separation at the junction between the substrate and the heat radiator via the bonding means, and the heat radiator does not fall off the substrate and the temperature of the substrate does not rise.

According to the third aspect of the present invention, there is provided a substrate which holds a lead for connection with a semiconductor element and has an opening for arranging the semiconductor element in the center thereof, and one surface of the substrate. Side, and a mounting portion of the semiconductor element is formed at a position facing the opening of the substrate,
In a high heat radiation type semiconductor device having a heat radiator having a large thermal conductivity for dissipating heat generated from the semiconductor element to the outside, the substrate and the heat radiator are joined by joining means, and the substrate is pierced through the joint. Alternatively, since at least a pair of press-fit pins spaced apart from each other are inserted into the board and the heat radiator from the heat radiator side, even if a temperature difference occurs between the board and the heat radiator, the heat radiator and the board can be connected via the press-fit pins. It is firmly connected, and there is no separation at the junction between the substrate and the heat radiator via the bonding means, so that the heat radiator does not fall off the substrate or the temperature of the substrate rises.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor device according to a reference example of the present invention.

FIG. 2 is a sectional view of the semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a sectional view of a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a sectional view of a semiconductor device according to a third embodiment of the present invention.

FIG. 5 is a cross-sectional view of a conventional semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor element, 6 Adhesive tape (joining means), 10
Substrate, 10a opening, 10b radiator mounting part, 10c
Hole, 11 radiator, 11a tower mounting part, 12 substrates, 1
2a opening, 12b recess, 13 radiator, 13a
Tower mounting portion, 13b convex portion, 14 substrate, 14a opening portion,
15 Heat radiator, 15a Tower mounting part, 16 press-fit pins.

──────────────────────────────────────────────────続 き Continuation of front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 23/40

Claims (3)

(57) [Claims] 1. A connection lead for holding a connection with a semiconductor element,
A substrate in which an opening for arranging the semiconductor element is formed in a central portion thereof, and a mounting portion for the semiconductor element formed in a position facing the opening in the substrate, which is mounted on one surface side of the substrate; And a radiator having a large thermal conductivity for dissipating heat generated from the semiconductor element to the outside. In the high heat radiation type semiconductor device, the tower mounting portion of the radiator is formed to project in a convex shape. And, on the radiator side of the substrate, there is provided a radiator mounting portion in which a hole for mounting the radiator is formed after the tower mounting portion is fitted at a position facing the opening and then crimped. A high heat dissipation type semiconductor device characterized by the above-mentioned. 2. A semiconductor device comprising a lead for connection with a semiconductor element,
A substrate in which an opening for arranging the semiconductor element is formed in a central portion thereof, and a mounting portion for the semiconductor element formed in a position facing the opening in the substrate, which is mounted on one surface side of the substrate; In addition, in a high heat radiation type semiconductor device having a heat radiator having a large thermal conductivity for dissipating heat generated from the semiconductor element to the outside, the substrate and the heat radiator are joined by joining means. A high heat dissipation type semiconductor device, comprising: at least two sets of concave and convex portions which are fitted to each other on the substrate and the heat radiator of a joint portion. 3. A connection lead for holding a connection with a semiconductor element,
A substrate in which an opening for arranging the semiconductor element is formed in a central portion thereof, and a mounting portion for the semiconductor element formed in a position facing the opening in the substrate, which is mounted on one surface side of the substrate; In addition, in a high heat radiation type semiconductor device having a heat radiator having a large thermal conductivity for dissipating heat generated from the semiconductor element to the outside, the substrate and the heat radiator are joined by joining means. A high heat radiation type semiconductor device characterized in that at least a pair of press-fit pins spaced apart from each other are inserted into the substrate and the heat radiator from the substrate or the heat radiator through a joint.