JP3187310U - Vacuum drying processing equipment - Google Patents

Vacuum drying processing equipment Download PDF

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JP3187310U
JP3187310U JP2013005218U JP2013005218U JP3187310U JP 3187310 U JP3187310 U JP 3187310U JP 2013005218 U JP2013005218 U JP 2013005218U JP 2013005218 U JP2013005218 U JP 2013005218U JP 3187310 U JP3187310 U JP 3187310U
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substrate
reduced
support
support portion
pressure drying
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健吾 溝崎
高広 古家
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Tokyo Electron Ltd
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Abstract

【課題】フォトリソグラフィ工程等において基板に塗布膜を形成するために用いられ、処理後の基板の帯電量の増加を抑制し、基板上に形成された製品の静電破壊を防止する減圧乾燥処理装置を提供する。
【解決手段】基板Gに塗布した塗布液を乾燥させるための減圧乾燥処理装置1であって、減圧可能な処理空間10と、この処理空間10で減圧乾燥処理を行う際に、基板Gに形成された製品の領域外で基板Gを支持する支持部11とを有する。
【選択図】図1
Depressurized drying process used to form a coating film on a substrate in a photolithography process or the like and suppresses an increase in the amount of charge of the substrate after processing and prevents electrostatic breakdown of a product formed on the substrate Providing equipment.
A reduced-pressure drying apparatus 1 for drying a coating solution applied to a substrate G, which is formed on a substrate G when a reduced-pressure processing space 10 is subjected to a reduced-pressure drying process in the processing space 10. And a support portion 11 that supports the substrate G outside the region of the manufactured product.
[Selection] Figure 1

Description

本考案は、フォトリソグラフィ工程等において被処理基板に塗布膜を形成するために、塗布液が塗布された被処理基板に減圧乾燥処理を施す減圧乾燥処理装置に関する。   The present invention relates to a reduced-pressure drying apparatus that performs a reduced-pressure drying process on a substrate to be processed on which a coating solution is applied in order to form a coating film on the substrate to be processed in a photolithography process or the like.

例えばFPD(フラット・パネル・ディスプレイ)の製造においては、ガラス基板等の被処理基板(以下、基板と呼ぶ)に所定の膜を成膜した後、処理液であるフォトレジスト(以下、レジストと呼ぶ)を塗布してレジスト膜を形成し、回路パターンに対応してレジスト膜を露光し、これを現像処理する、いわゆるフォトリソグラフィ工程により回路パターンを形成する。そして、前記レジスト膜の形成工程において、基板へレジストを塗布した後、減圧乾燥により塗布膜を乾燥させる減圧乾燥処理が行われる。   For example, in the manufacture of an FPD (flat panel display), a predetermined film is formed on a substrate to be processed (hereinafter referred to as a substrate) such as a glass substrate, and then a photoresist (hereinafter referred to as a resist) which is a processing liquid. ) Is applied to form a resist film, the resist film is exposed in accordance with the circuit pattern, and this is developed, so that a circuit pattern is formed by a so-called photolithography process. In the resist film forming step, after applying a resist to the substrate, a reduced pressure drying process is performed in which the applied film is dried by reduced pressure drying.

従来、減圧乾燥処理を行う装置として、例えば特許文献1に開示の減圧乾燥処理装置が用いられる。減圧乾燥処理において、まず表面に塗布液が塗布された基板が載置部上に載置される。次に載置部上面の周縁部と接触する位置まで蓋体を下降させ、蓋体と載置部により基板を収容した処理空間を形成する。その後前記の処理空間内を減圧することにより塗布液を乾燥させて、基板の表面に塗布膜が形成される。   Conventionally, for example, a reduced-pressure drying apparatus disclosed in Patent Document 1 is used as an apparatus for performing a reduced-pressure drying process. In the reduced-pressure drying process, first, a substrate having a coating solution coated on the surface is placed on the placement unit. Next, the lid is lowered to a position where it comes into contact with the peripheral edge of the upper surface of the mounting portion, and a processing space that accommodates the substrate is formed by the lid and the mounting portion. Thereafter, the coating liquid is dried by reducing the pressure in the processing space, and a coating film is formed on the surface of the substrate.

特開2002−239441号公報JP 2002-239441 A

前記の減圧乾燥処理装置においては、載置部表面に基板の裏面が全面接触した状態で減圧乾燥処理を行う。しかし減圧乾燥処理の際に、基板と載置部との摩擦により、減圧乾燥処理後の基板の帯電量が増加して、基板上に形成された製品が静電破壊されるおそれがあった。   In the reduced-pressure drying apparatus, the reduced-pressure drying process is performed in a state where the back surface of the substrate is in full contact with the surface of the mounting portion. However, during the reduced-pressure drying process, the amount of charge on the substrate after the reduced-pressure drying process increases due to friction between the substrate and the mounting portion, and the product formed on the substrate may be electrostatically damaged.

本考案は、前記の従来技術の問題点を解決するものであり、減圧乾燥処理後の基板の帯電量の増加を抑制可能な減圧乾燥処理装置を提供する。   The present invention solves the above-mentioned problems of the prior art and provides a reduced-pressure drying apparatus capable of suppressing an increase in the amount of charge of a substrate after the reduced-pressure drying process.

前記課題を解決するために、本考案に係る減圧乾燥処理装置は、減圧可能な処理空間と、この処理空間で減圧乾燥処理を行う際に、基板に形成された製品の領域外で基板を支持する支持部とを有する。   In order to solve the above-mentioned problems, a reduced-pressure drying apparatus according to the present invention supports a substrate outside a region of a product formed on the substrate when performing a reduced-pressure drying process in the processing space that can be depressurized. And a supporting portion.

本考案の減圧乾燥処理装置によれば、基板と基板を支持する支持部との接触面積を低減できるので、減圧乾燥処理後における基板の帯電量の増加を抑制でき、基板上に形成された製品の静電破壊を防止できる。   According to the reduced-pressure drying apparatus of the present invention, the contact area between the substrate and the support part that supports the substrate can be reduced, so that an increase in the amount of charge of the substrate after the reduced-pressure drying process can be suppressed, and the product formed on the substrate Can be prevented.

本考案に係る減圧乾燥処理装置の一構成例を示す断面図である。It is sectional drawing which shows the example of 1 structure of the reduced pressure drying processing apparatus concerning this invention. 前記減圧乾燥処理装置におけるステージ平面図である。It is a stage top view in the said vacuum drying processing apparatus. 本考案において基板と基板の支持部との位置関係を示す平面図である。It is a top view which shows the positional relationship of a board | substrate and the support part of a board | substrate in this invention.

以下、添付図を参照して、本考案の好適な実施形態を説明する。   Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

図1は、本考案における減圧乾燥処理装置1の断面図である。減圧乾燥処理装置1は、ステージ2と、蓋体3とを有する。また減圧乾燥処理装置1は、蓋体3を昇降させるための昇降手段例えばエアシリンダ4を有する。   FIG. 1 is a cross-sectional view of a vacuum drying apparatus 1 according to the present invention. The vacuum drying processing apparatus 1 includes a stage 2 and a lid 3. Moreover, the reduced pressure drying processing apparatus 1 has an elevating means for elevating the lid 3, for example, an air cylinder 4.

蓋体3は、ステージ2の上部に設けられる。そして蓋体3を下降させてステージ2の周縁部と接触させ、その内部の処理空間10を気密に維持することが可能である。   The lid 3 is provided on the upper part of the stage 2. Then, the lid 3 can be lowered and brought into contact with the peripheral edge of the stage 2 to keep the processing space 10 inside thereof airtight.

図2は、ステージ2の平面図である。ステージ2の角部付近に4個の排気口5を有する。排気口5には図示しない排気ポンプが接続され、処理空間10を減圧することが可能である。   FIG. 2 is a plan view of the stage 2. Four exhaust ports 5 are provided near the corners of the stage 2. An exhaust pump (not shown) is connected to the exhaust port 5 so that the processing space 10 can be decompressed.

またステージ2の上面には、被処理基板である基板Gを支持する支持部11が形成されている。支持部11は、複数の支持ピン6からなるピン状支持部8と、帯状の支持バー9からなる帯状支持部7とで構成されており、ピン状支持部8および帯状支持部7により基板Gが支持される。支持ピン6は、基板Gの周縁部に配置され、上端部を基板Gの裏面に点接触させることで基板Gを支持する。支持ピン6の直径は、例えば3mm、支持ピン6の上端の高さはステージ2の上面から例えば10mmであり、支持ピン6の上端は曲面状に形成されている。支持バー9は、基板Gの一端から他端に向けて帯状に配置され、上端面を基板Gの裏面に面接触させることで基板Gを支持する。支持バー9の幅は、例えば10mm、支持バー9の上端の高さは、ステージ2の上面から例えば10mmである。なお、ピン状支持部8(支持ピン6)は、ステージ2に固定してもよく、また、ステージ2に対して着脱自在として取付位置を変更可能としてもよい。帯状支持部7(支持バー9)は、ステージ2に対して容易に脱着自在になっており、帯状支持部7の取り付け位置は容易に変更可能である。   Further, on the upper surface of the stage 2, a support portion 11 that supports a substrate G that is a substrate to be processed is formed. The support portion 11 includes a pin-like support portion 8 made up of a plurality of support pins 6 and a belt-like support portion 7 made up of a belt-like support bar 9, and the substrate G is formed by the pin-like support portion 8 and the belt-like support portion 7. Is supported. The support pins 6 are arranged on the peripheral edge of the substrate G, and support the substrate G by making point contact of the upper end portion with the back surface of the substrate G. The diameter of the support pin 6 is, for example, 3 mm, the height of the upper end of the support pin 6 is, for example, 10 mm from the upper surface of the stage 2, and the upper end of the support pin 6 is formed in a curved shape. The support bar 9 is arranged in a band shape from one end of the substrate G to the other end, and supports the substrate G by bringing the upper end surface into surface contact with the back surface of the substrate G. The width of the support bar 9 is, for example, 10 mm, and the height of the upper end of the support bar 9 is, for example, 10 mm from the upper surface of the stage 2. The pin-shaped support portion 8 (support pin 6) may be fixed to the stage 2 or may be detachable from the stage 2 so that the attachment position can be changed. The belt-like support portion 7 (support bar 9) can be easily attached to and detached from the stage 2, and the attachment position of the belt-like support portion 7 can be easily changed.

図3は、基板G、ピン状支持部8、帯状支持部7の位置関係を示す平面図である。図3では、1枚の基板Gから4つの製品Pを作成する例を示している。製品Pは、たとえば処理後に基板Gを分断して最終製品となる表面に回路パターンが形成された部分などである。   FIG. 3 is a plan view showing the positional relationship between the substrate G, the pin-like support portion 8 and the belt-like support portion 7. FIG. 3 shows an example in which four products P are created from one substrate G. The product P is, for example, a portion in which a circuit pattern is formed on a surface that becomes a final product by dividing the substrate G after processing.

ピン状支持部8は、製品Pの領域外で、かつ基板Gの周縁を支持するように配置される。帯状支持部7の位置は、基板Gに形成される製品Pの領域に基づいて決定され、製品Pの領域外でかつ基板Gの中央付近を支持するように配置される。このようにピン状支持部8と帯状支持部7とで基板Gを支持することにより、従来と比較して基板Gを支持する面積(接触面積)が低減される。基板Gを支持する面積が低減されるので、減圧乾燥処理時の基板Gと支持部11との摩擦により発生する静電気を抑制できる。したがって減圧乾燥処理後の基板Gの帯電量の増加を抑制することが可能である。これにより、基板G上に形成された製品Pが静電破壊されるのを防止することができる。   The pin-shaped support portion 8 is disposed outside the region of the product P and so as to support the peripheral edge of the substrate G. The position of the belt-like support portion 7 is determined based on the region of the product P formed on the substrate G, and is disposed so as to support the vicinity of the center of the substrate G outside the region of the product P. As described above, by supporting the substrate G with the pin-shaped support portion 8 and the belt-shaped support portion 7, the area (contact area) for supporting the substrate G is reduced as compared with the conventional case. Since the area for supporting the substrate G is reduced, static electricity generated by friction between the substrate G and the support portion 11 during the drying under reduced pressure can be suppressed. Therefore, it is possible to suppress an increase in the charge amount of the substrate G after the vacuum drying process. Thereby, it is possible to prevent the product P formed on the substrate G from being electrostatically destroyed.

また、支持部11(ピン状支持部8と帯状支持部7)は、製品Pの領域外を支持するように配置されているので、減圧乾燥処理後にピン状支持部8や帯状支持部7の跡が製品Pの領域内に発生する虞がない。   Moreover, since the support part 11 (the pin-shaped support part 8 and the strip-shaped support part 7) is arrange | positioned so that the area | region of the product P may be supported, the pin-shaped support part 8 and the strip-shaped support part 7 of a decompression drying process are carried out. There is no possibility that a mark will be generated in the region of the product P.

次に、本考案における減圧乾燥処理装置1の動作について説明する。まず、蓋体3が上昇した状態で、塗布液例えばフォトレジストが塗布された基板Gが支持部11上に載置される。その後、蓋体3を下降させてステージ2の周縁部と接触させ、基板Gを収容した処理空間10を形成する。次に、排気口5を通じて処理空間10を減圧し、所定の時間減圧状態を維持する。その後、処理空間10を外部と同じ圧力に戻し、次に蓋体3を上昇させる。その後、塗布液が乾燥して塗布膜が形成された基板Gが支持部11上から搬出され、基板Gの減圧乾燥処理が完了する。   Next, the operation of the vacuum drying apparatus 1 according to the present invention will be described. First, the substrate G coated with a coating solution, for example, a photoresist, is placed on the support portion 11 with the lid 3 raised. Thereafter, the lid 3 is lowered and brought into contact with the peripheral edge of the stage 2 to form a processing space 10 containing the substrate G. Next, the processing space 10 is decompressed through the exhaust port 5, and the decompressed state is maintained for a predetermined time. Thereafter, the processing space 10 is returned to the same pressure as the outside, and then the lid 3 is raised. Thereafter, the substrate G on which the coating liquid is dried and the coating film is formed is unloaded from the support portion 11, and the decompression drying process of the substrate G is completed.

以上、本考案の好適な実施の形態を説明したが、本考案は上述した実施の形態に限定されるものではなく、その技術的思想の範囲内で種種の変形または変更が可能である。   The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications or changes can be made within the scope of the technical idea.

例えば本実施の形態では1枚の基板Gから4つの製品Pを作成する例で説明したが、この例に限定されない。1枚の基板Gから例えば9つの製品Pを作成する場合は、帯状支持部7の取り付け位置を変更し、9つの製品Pの領域外を支持するように帯状支持部7を配置し直せばよい。このようにすることにより、1枚の基板から4つの製品Pを作成する場合においても、1枚の基板から4つの製品Pと異なる、例えば9つの製品Pを作成する場合においても、減圧乾燥処理後に製品Pの領域内にピン状支持部8や帯状支持部7の跡が発生する虞がない。   For example, in the present embodiment, an example in which four products P are created from one substrate G has been described, but the present invention is not limited to this example. For example, when nine products P are created from one substrate G, the attachment position of the belt-like support portion 7 is changed, and the belt-like support portion 7 is rearranged so as to support the outside of the area of the nine products P. . In this way, even when four products P are produced from one substrate, even when nine products P are produced from one substrate, which are different from the four products P, for example, the reduced-pressure drying process is performed. There is no possibility that traces of the pin-like support portion 8 and the belt-like support portion 7 will be generated in the region of the product P later.

また帯状支持部7を1つではなく、複数配置してもよい。帯状支持部7を複数配置する場合も、帯状支持部7の位置は製品Pの領域外を支持するように配置するのがよい。   Moreover, you may arrange multiple strip | belt-shaped support parts 7 instead of one. Even when a plurality of belt-like support portions 7 are arranged, the position of the belt-like support portion 7 is preferably arranged so as to support the outside of the region of the product P.

また支持部11は、ピン状支持部8及び帯状支持部7で構成する場合に限られず、ピン状支持部8のみ、又は、帯状支持部7のみで構成してもよい。支持部11をピン状支持部8と帯状支持部7とで構成する場合には、定形の基板Gの周縁を位置が固定されたピン状支持部8で支持する一方、製品Pの個数や位置や形状に応じて位置が変更可能な帯状支持部7で支持するようにしてもよい。   Moreover, the support part 11 is not restricted to the case where it comprises the pin-shaped support part 8 and the strip | belt-shaped support part 7, You may comprise only the pin-shaped support part 8 or only the strip | belt-shaped support part 7. FIG. When the support part 11 is composed of the pin-like support part 8 and the belt-like support part 7, the peripheral edge of the fixed substrate G is supported by the pin-like support part 8 whose position is fixed, while the number and positions of the products P are supported. Alternatively, it may be supported by a belt-like support portion 7 whose position can be changed according to the shape.

さらに支持部11(ピン状支持部8、帯状支持部7)に対して基板Gを受け渡すための図示しない受け渡し手段、例えば基板搬送ロボット等を設けてもよく、さらに効率良く減圧乾燥処理を行うことが可能である。   Further, a delivery means (not shown) for delivering the substrate G to the support portion 11 (pin-like support portion 8 and belt-like support portion 7), for example, a substrate transfer robot or the like may be provided, and the vacuum drying process is performed more efficiently. It is possible.

本考案における塗布液としてはフォトレジストに限らず、層間絶縁材料、誘電体材料、配線材料等の塗布液でも可能である。また本考案における被処理基板はFPD基板に限らず、半導体ウエハ、CD基板、フォトマスク、プリント基板等も可能である。   The coating solution in the present invention is not limited to a photoresist, but may be a coating solution such as an interlayer insulating material, a dielectric material, and a wiring material. Further, the substrate to be processed in the present invention is not limited to an FPD substrate, but may be a semiconductor wafer, a CD substrate, a photomask, a printed substrate, or the like.

G 基板
P 製品
1 減圧乾燥処理装置
2 ステージ
3 蓋体
6 支持ピン
7 帯状支持部
8 ピン状支持部
9 支持バー
10 処理空間
11 支持部
G substrate P product 1 vacuum drying treatment device 2 stage 3 lid 6 support pin 7 band-like support portion 8 pin-like support portion 9 support bar 10 treatment space 11 support portion

Claims (4)

基板に塗布した塗布液を乾燥させるための減圧乾燥処理装置であって、
減圧可能な処理空間と、
この処理空間で減圧乾燥処理を行う際に、基板に形成された製品の領域外で基板を支持する支持部と
を有することを特徴とする減圧乾燥処理装置。
A vacuum drying apparatus for drying a coating liquid applied to a substrate,
A depressurized processing space;
A reduced-pressure drying apparatus having a support portion for supporting the substrate outside the region of the product formed on the substrate when the reduced-pressure drying process is performed in the processing space.
前記支持部は、
基板に形成された製品の領域外でかつ基板の周縁を支持する複数の支持ピンからなるピン状支持部と、
基板に形成された製品の領域外でかつ基板の一端から他端に向けて支持する帯状の支持バーからなる帯状支持部と
を有することを特徴とする請求項1に記載の減圧乾燥処理装置。
The support part is
A pin-like support portion comprising a plurality of support pins that support the periphery of the substrate outside the area of the product formed on the substrate;
The reduced-pressure drying apparatus according to claim 1, further comprising: a belt-like support portion formed of a belt-like support bar that is supported outside the region of the product formed on the substrate and from one end of the substrate toward the other end.
前記帯状支持部の位置は、変更自在であることを特徴とする請求項2に記載の減圧乾燥処理装置。   The reduced-pressure drying apparatus according to claim 2, wherein the position of the belt-like support part is freely changeable. 前記減圧乾燥処理装置は、
ステージと、
蓋体と
を有し、
蓋体とステージの周縁部とを接触させて、その内部に処理空間を気密状に形成し、
前記支持部を前記ステージに設けたことを特徴とする請求項1〜請求項4のいずれかに記載の減圧乾燥処理装置。
The reduced-pressure drying apparatus is
Stage,
A lid,
The lid and the peripheral edge of the stage are brought into contact with each other, and a processing space is formed in an airtight manner therein,
The reduced pressure drying apparatus according to any one of claims 1 to 4, wherein the support portion is provided on the stage.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107062812A (en) * 2017-04-26 2017-08-18 京东方科技集团股份有限公司 One kind is dried under reduced pressure chamber and vacuum decompression drying equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107062812A (en) * 2017-04-26 2017-08-18 京东方科技集团股份有限公司 One kind is dried under reduced pressure chamber and vacuum decompression drying equipment
CN107062812B (en) * 2017-04-26 2019-09-03 京东方科技集团股份有限公司 One kind being dried under reduced pressure chamber and vacuum decompression drying equipment

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