JP3182317U - LED plant growth lamp - Google Patents

LED plant growth lamp Download PDF

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JP3182317U
JP3182317U JP2013000004U JP2013000004U JP3182317U JP 3182317 U JP3182317 U JP 3182317U JP 2013000004 U JP2013000004 U JP 2013000004U JP 2013000004 U JP2013000004 U JP 2013000004U JP 3182317 U JP3182317 U JP 3182317U
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plant growth
fluorescent powder
gan
layer
growth lamp
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彭武
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東莞長發光電科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Abstract

【課題】省エネ・環境保全に繋がるだけでなく、雨の日や夜などにも光の照射をして、植物の生長を促進するＬＥＤ植物生長ランプを提供する。
【解決手段】ＬＥＤ植物生長ランプは、ブラケット１とＧａＮ系藍色光チップ３からなり、ＧａＮ系藍色光チップ３はブラケット１上に設置され、ＧａＮ系藍色光チップ３の表面には赤色蛍光粉末層４がコーティングされている。パッケージ構造は、シーラント層や、レンズ、プラスチックジャケットおよびアルミニウム基板が含まれており、シーラント層は赤色蛍光粉末層４上にコーティングされ、レンズはシーラント層に接着され、プラスチックジャケットは粘着剤層によってレンズと固定接続され、さらにプラスチックジャケットはアルミニウム基板上に設置される。
【選択図】図１The present invention provides an LED plant growth lamp that not only leads to energy saving and environmental conservation, but also promotes plant growth by irradiating light on rainy days and nights.
An LED plant growth lamp includes a bracket 1 and a GaN-based indigo light chip 3. The GaN-based indigo light chip 3 is installed on the bracket 1, and a red fluorescent powder layer is formed on the surface of the GaN-based indigo light chip 3. 4 is coated. The package structure includes a sealant layer, a lens, a plastic jacket, and an aluminum substrate. The sealant layer is coated on the red fluorescent powder layer 4, the lens is bonded to the sealant layer, and the plastic jacket is a lens by an adhesive layer. The plastic jacket is placed on an aluminum substrate.
[Selection] Figure 1

Description

本考案は植物生長ランプ分野に関するもので、特にＬＥＤ植物生長ランプに関するものである。   The present invention relates to the field of plant growth lamps, and more particularly to LED plant growth lamps.

植物の生長は光の照射がなければならなく、特にビニルハウス中の野菜の場合には、合理的な光の照射は、生長を促進するだけでなく、果実が太陽光が当たらないことによる病気、腐乱などを防げる。通常の情況では、野菜ビニルハウスには蛍光灯を設置して、雨の日や夜などの植物への光の照射に使われ、植物の快速生長を促進している。しかし、このような蛍光灯から出るスペクトルの中には少量のスペクトルだけが植物の光合成に利用され、しかも、蛍光灯自体が大量の熱量を放出するので、光の照射利用率が低く、ビニルハウス野菜の栽培コストも高くなる。   Plant growth must be exposed to light, especially in the case of vegetables in vinyl houses, rational light irradiation not only promotes growth, but also illness caused by fruit not being exposed to sunlight. , Prevent corruption. Under normal circumstances, fluorescent lamps are installed in vegetable vinyl houses and used to irradiate plants on rainy days and nights, thereby promoting rapid growth of plants. However, only a small amount of the spectrum emitted from such a fluorescent lamp is used for plant photosynthesis, and the fluorescent lamp itself emits a large amount of heat. The cultivation cost of vegetables also increases.

本考案の課題は、既存技術の欠点に対応して、ＬＥＤ植物生長ランプを提供することである。   The subject of this invention is providing the LED plant growth lamp corresponding to the fault of existing technology.

本考案は、ブラケットとＧａＮ系藍色光チップを含み、前記ＧａＮ系藍色光チップは前記ブラケット上に設置され、前記ＧａＮ系藍色光チップの表面には赤色蛍光粉末層がコーティングされている、ＬＥＤ植物生長ランプである。本考案のＬＥＤ植物生長ランプは省エネ・環境保全に繋がるだけでなく、雨の日や夜などにも光の照射を提供して、植物の生長を促進することができる。   The present invention includes a bracket and a GaN-based indigo light chip, the GaN-based indigo light chip is disposed on the bracket, and a surface of the GaN-based indigo light chip is coated with a red fluorescent powder layer. It is a growth lamp. The LED plant growth lamp of the present invention not only leads to energy saving and environmental conservation, but also provides light irradiation on rainy days and nights to promote plant growth.

本考案のＬＥＤ植物生長ランプの改良手段として、前記赤色蛍光粉末層は窒化物の赤色蛍光粉末層からなり、前記ＧａＮ系藍色光チップは粘着層によって窒化物の赤色蛍光粉末層と接着されてインテグラル構造となり、前記ＧａＮ系藍色光チップからでる藍色光は窒化物の赤色蛍光粉末層から出る赤色光と２つの波長帯が形成され、ちょうど植物の光合成に吸収されるスペクトルと合致するので、植物の生長を促進することができる。藍色光は緑葉の生長を促進し、赤色光は開花と実りおよび花期の延長に有利で、しかも、視覚的効果上、赤色と藍色を組み合わせた植物ＬＥＤランプはピンクの色となっているので、和やかで暖かい感じがする。   As a means for improving the LED plant growth lamp of the present invention, the red fluorescent powder layer is made of a nitride red fluorescent powder layer, and the GaN-based blue light chip is bonded to the nitride red fluorescent powder layer by an adhesive layer. The indigo light emitted from the GaN-based indigo light chip forms red light coming out of the red fluorescent powder layer of nitride and two wavelength bands, and matches the spectrum absorbed just by the plant photosynthesis. Can be promoted. Indigo light promotes the growth of green leaves, red light is advantageous for flowering and fruiting, and the flowering period is extended. Moreover, because of the visual effect, plant LED lamps that combine red and indigo have a pink color. It feels warm and warm.

本考案のＬＥＤ植物生長ランプにおいて、前記赤色の蛍光粉末層は６１０ｎｍ〜７２０ｎｍ波長の赤色を発光できる蛍光粉末層からなり、前記ＧａＮ系藍色光チップは粘着層によって、６１０ｎｍ〜７２０ｎｍ波長の赤色を発光できる蛍光粉末層とインテグラル構造を形成し、前記ＧａＮ系藍色光チップから出る藍色光は６１０ｎｍ〜７２０ｎｍ波長の赤色を発光できる蛍光粉末層から出る赤色と２つの波長帯を形成する。本考案では単一のＧａＮ系藍色光チップによって激発される窒化物赤色蛍光粉末層又は６１０ｎｍ〜７２０ｎｍ波長の赤色を発光できる蛍光粉末層のパッケージングによって形成されるスモールパワー又はビッグパワーのＬＥＤ固体光源を使用している。   In the LED plant growth lamp of the present invention, the red fluorescent powder layer is composed of a fluorescent powder layer capable of emitting red light having a wavelength of 610 nm to 720 nm, and the GaN-based blue light chip emits red light having a wavelength of 610 nm to 720 nm by an adhesive layer. An integral structure is formed with the fluorescent powder layer, and the blue light emitted from the GaN-based blue light chip forms two wavelength bands, red and red emitted from the fluorescent powder layer capable of emitting red light having a wavelength of 610 nm to 720 nm. In the present invention, a small-power or big-power LED solid-state light source formed by packaging a nitride red fluorescent powder layer fired by a single GaN-based blue light chip or a fluorescent powder layer capable of emitting red light having a wavelength of 610 nm to 720 nm. Is used.

本考案のＬＥＤ植物生長ランプの改良手段として、前記粘着層はシリカゲル粘着層又はエポキシ樹脂粘着層である。   As a means for improving the LED plant growth lamp of the present invention, the adhesive layer is a silica gel adhesive layer or an epoxy resin adhesive layer.

本考案のＬＥＤ植物生長ランプの改良手段として、前記ＧａＮ系藍色光チップ上に設置さえる正負極チップは、導線によってブラケット上に設置される正負極チップと接続され、チップ上の正負極はブラケット上の正負極と金線で溶接される。   As a means for improving the LED plant growth lamp of the present invention, the positive and negative electrode chips installed on the GaN-based indigo blue light chip are connected to positive and negative electrode chips installed on the bracket by conducting wires, and the positive and negative electrodes on the chip are on the bracket. Welded with positive and negative electrodes and gold wire.

また、本考案のＬＥＤ植物生長ランプは、シーラント層や、レンズ、プラスチックジャケットおよびアルミニウム基板を含み、前記シーラント層は前記赤色蛍光粉末層上にコーティングされ、前記レンズは前記シーラント層に接着され、前記プラスチックジャケットは粘着剤層によって前記レンズと固定接続され、さらに前記プラスチックジャケットは前記アルミニウム基板上に設置される。   The LED plant growth lamp of the present invention includes a sealant layer, a lens, a plastic jacket, and an aluminum substrate, the sealant layer is coated on the red fluorescent powder layer, the lens is adhered to the sealant layer, A plastic jacket is fixedly connected to the lens by an adhesive layer, and the plastic jacket is installed on the aluminum substrate.

前記導線は出力電極によって前記アルミニウム基板と接続される。   The conducting wire is connected to the aluminum substrate by an output electrode.

既存技術の窒化物の赤色蛍光粉末層の調製プロセスは煩雑で、生産コストが高いが、上記方法による窒化物蛍光粉末の調製プロセスは簡単で、生産コストも低い。このような調製方法によって調製されたＬＥＤ植物生長ランプは実用性が強い。ＬＥＤ植物生長ランプは雨の日や夜にも植物に照明を提供することによって、植物の生長を促進することができ、省エネが可能であるだけでなく、環境に優しい。   The preparation process of the nitride red fluorescent powder layer of the existing technology is complicated and the production cost is high, but the preparation process of the nitride fluorescent powder by the above method is simple and the production cost is low. The LED plant growth lamp prepared by such a preparation method is highly practical. LED plant growth lamps can promote plant growth by providing lighting to plants on rainy days and nights, not only can they save energy, but are also environmentally friendly.

図１は本考案の構造見取り図である。FIG. 1 is a structural sketch of the present invention. 図２は本考案の固体光源のパッケージフローチャートである。FIG. 2 is a package flowchart of the solid-state light source of the present invention. 図３は本考案の見取り図である。FIG. 3 is a sketch of the present invention.

以下では添付図と具体的な実施方式を合わせて、本考案およびその技術効果に対して詳しく説明するが、本考案はこれに限るものではない。   Hereinafter, the present invention and its technical effects will be described in detail with reference to the accompanying drawings and specific implementation methods, but the present invention is not limited to this.

図１と図３に示されているのは、ブラケット１とＧａＮ系藍色光チップ３を含み、前記ＧａＮ系藍色光チップ３は前記ブラケット１上に設置され、前記ＧａＮ系藍色光チップ３の表面には赤色蛍光粉末層４がコーティングされる、ＬＥＤ植物生長ランプである。   1 and FIG. 3 include a bracket 1 and a GaN-based indigo light chip 3, the GaN-based indigo light chip 3 being installed on the bracket 1, and the surface of the GaN-based indigo light chip 3. Is an LED plant growth lamp coated with a red fluorescent powder layer 4.

本考案のＬＥＤ植物生長ランプにおいて、赤色蛍光粉末層４には窒化物の赤色の蛍光粉末層が含まれ、ＧａＮ系藍色光チップ３から出る藍色光は窒化物の赤色蛍光粉末層から出る赤色光と２つの波長帯が形成され、ＧａＮ系藍色光チップ３はシリカゲル２又はエポキシ樹脂によって、窒化物の赤色蛍光粉末層とインテグラル構造となる。シリカゲル又はエポキシ樹脂は１：１０の質量比で赤色の蛍光粉末と撹拌され、その後、所定の比例で配合された粘着剤混合物によってＧａＮ系藍色光チップ３に接着される。本考案によって発生されるスペクトルには、ＧａＮ系チップ３から出る藍色光と窒化物の蛍光粉末層から出る赤色の２つの波長帯が含まれ、ちょうど植物の光合成に吸収されるスペクトルと合致するので、植物の成長を促進することができる。   In the LED plant growth lamp of the present invention, the red fluorescent powder layer 4 includes a red fluorescent powder layer of nitride, and the blue light emitted from the GaN-based blue light chip 3 is red light emitted from the red fluorescent powder layer of nitride. The GaN-based indigo light chip 3 has an integral structure with the red fluorescent powder layer of nitride by silica gel 2 or epoxy resin. The silica gel or the epoxy resin is stirred with the red fluorescent powder at a mass ratio of 1:10, and then bonded to the GaN-based indigo light chip 3 with a pressure-sensitive adhesive mixture formulated in a predetermined proportion. The spectrum generated by the present invention includes two wavelength bands of indigo light emitted from the GaN-based chip 3 and red emitted from the nitride fluorescent powder layer, and matches exactly the spectrum absorbed by the plant photosynthesis. Can promote plant growth.

本考案のＬＥＤ植物生長ランプにおいて、赤色蛍光粉末層４には、６５０ｎｍ波長の赤色を発光できる蛍光粉末層が含まれており、ＧａＮ系藍色光チップ３から出る藍色光は６５０ｎｍ波長をの赤色を発光できる蛍光粉末層と２つの波長帯が形成され、赤色の蛍光粉末層から６５０ｎｍ波長の光が出ると、この時のスペクトルは植物光合成に必要とするスペクトルに最適で、植物の生長に最も有利である。   In the LED plant growth lamp of the present invention, the red fluorescent powder layer 4 includes a fluorescent powder layer capable of emitting red light having a wavelength of 650 nm, and the blue light emitted from the GaN-based blue light chip 3 has a red color having a wavelength of 650 nm. When a fluorescent powder layer capable of emitting light and two wavelength bands are formed and light of 650 nm wavelength is emitted from the red fluorescent powder layer, the spectrum at this time is optimal for the spectrum required for plant photosynthesis and is most advantageous for plant growth. It is.

また、ＧａＮ系藍色光チップ３は、シリカゲル層２又はエポキシ樹脂層によって、６５０ｎｍ波長の赤色を発光できる赤色蛍光粉末層とインテグラル構造を構成し、シリカゲル又はエポキシ樹脂を１：１０の質量比で、６５０ｎｍ波長の赤色を発光できる赤色蛍光粉末層と撹拌し、その後、所定の比例で配合された粘着剤混合物によってＧａＮ系藍色光チップ３に接着され、ＧａＮ系藍色光チップ３上に設置される正負極は導線５によってブラケット１上に設置される正負極と接続されるが、導線５は金線である。   The GaN-based indigo light chip 3 has an integral structure with a red fluorescent powder layer capable of emitting red light of 650 nm wavelength by the silica gel layer 2 or the epoxy resin layer, and the silica gel or the epoxy resin is made in a mass ratio of 1:10. , Stirred with a red fluorescent powder layer capable of emitting red at 650 nm wavelength, and then adhered to the GaN-based indigo light chip 3 by an adhesive mixture formulated in a predetermined proportion, and placed on the GaN-based indigo light chip 3 The positive and negative electrodes are connected to the positive and negative electrodes installed on the bracket 1 by a conductive wire 5, and the conductive wire 5 is a gold wire.

また、本考案のＬＥＤ植物生長ランプは、シーラント層６や、レンズ７、プラスチックジャケット８およびアルミニウム基板９を含み、前記シーラント層６は前記赤色蛍光粉末層４上にコーティングされ、前記レンズ７は前記シーラント層６に接着され、前記プラスチックジャケット８は粘着剤層１０によって前記レンズ７と固定接続され、さらに前記プラスチックジャケット８は前記アルミニウム基板９上に設置される。   The LED plant growth lamp of the present invention includes a sealant layer 6, a lens 7, a plastic jacket 8, and an aluminum substrate 9. The sealant layer 6 is coated on the red fluorescent powder layer 4, and the lens 7 is Adhered to the sealant layer 6, the plastic jacket 8 is fixedly connected to the lens 7 by an adhesive layer 10, and the plastic jacket 8 is installed on the aluminum substrate 9.

好ましくは、導線５は出力電極１１によってアルミニウム基板９と接続される。   Preferably, the conductive wire 5 is connected to the aluminum substrate 9 by the output electrode 11.

図１と図３に示されているのは、ブラケット１とＧａＮ系藍色光チップ３を含み、前記ＧａＮ系藍色光チップ３は前記ブラケット１上に設置され、前記ＧａＮ系藍色光チップ３の表面には赤色蛍光粉末層４がコーティングされる、ＬＥＤ植物生長ランプである。   1 and FIG. 3 include a bracket 1 and a GaN-based indigo light chip 3, the GaN-based indigo light chip 3 being installed on the bracket 1, and the surface of the GaN-based indigo light chip 3. Is an LED plant growth lamp coated with a red fluorescent powder layer 4.

本ＬＥＤ植物生長ランプにおいて、赤色蛍光粉末層４には窒化物の赤色の蛍光粉末層が含まれ、ＧａＮ系藍色光チップ３から出る藍色光は窒化物の赤色蛍光粉末層から出る赤色光と２つの波長帯が形成され、ＧａＮ系藍色光チップ３はシリカゲル２又はエポキシ樹脂によって、窒化物の赤色蛍光粉末層とインテグラル構造となる。シリカゲル又はエポキシ樹脂は２：１０の質量比で赤色の蛍光粉末と撹拌され、その後、所定の比例で配合された粘着剤混合物によってＧａＮ系藍色光チップ３に接着される。本考案によって発射されるスペクトルには、ＧａＮ系チップ３から出る藍色光と窒化物の蛍光粉末層から出る赤色の２つの波長帯が含まれ、ちょうど植物の光合成に吸収されるスペクトルと合致するので、植物の成長を促進することができる。   In this LED plant growth lamp, the red fluorescent powder layer 4 includes a nitride red fluorescent powder layer, and the indigo light emitted from the GaN-based indigo light chip 3 is the red light emitted from the nitride red fluorescent powder layer and 2. Two wavelength bands are formed, and the GaN-based indigo blue light chip 3 has an integral structure with the red fluorescent powder layer of nitride by silica gel 2 or epoxy resin. Silica gel or epoxy resin is stirred with the red fluorescent powder at a mass ratio of 2:10, and then bonded to the GaN-based indigo light chip 3 with an adhesive mixture formulated in a predetermined proportion. The spectrum emitted by the present invention includes two wavelength bands, indigo blue light emitted from the GaN-based chip 3 and red light emitted from the nitride fluorescent powder layer, and matches the spectrum absorbed just by the plant photosynthesis. Can promote plant growth.

本ＬＥＤ植物生長ランプにおいて、赤色蛍光粉末層４には、７１０ｎｍ波長の赤色を発光できる蛍光粉末層が含まれており、ＧａＮ系藍色光チップ３から出る藍色光は７１０ｎｍ波長をの赤色を発光できる蛍光粉末層と２つの波長帯が形成され、赤色の蛍光粉末層から７１０ｎｍ波長の光が出ると、この時のスペクトルは植物光合成に必要とするスペクトルに最適で、植物の生長に最も有利である。   In the present LED plant growth lamp, the red fluorescent powder layer 4 includes a fluorescent powder layer capable of emitting red light having a wavelength of 710 nm, and the blue light emitted from the GaN-based blue light chip 3 can emit red light having a wavelength of 710 nm. When a fluorescent powder layer and two wavelength bands are formed and light of 710 nm wavelength is emitted from the red fluorescent powder layer, the spectrum at this time is optimal for the spectrum required for plant photosynthesis and is most advantageous for plant growth. .

また、ＧａＮ系藍色光チップ３は、シリカゲル層２又はエポキシ樹脂層によって、７１０ｎｍ波長の赤色を発光できる赤色蛍光粉末層とインテグラル構造を構成し、シリカゲル又はエポキシ樹脂を２：１０の質量比で、７１０ｎｍ波長の赤色を発光できる赤色蛍光粉末層と撹拌し、その後、所定の比例で配合された粘着剤混合物によってＧａＮ系藍色光チップ３に接着され、ＧａＮ系藍色光チップ３上に設置される正負極は導線５によってブラケット１上に設置される正負極と接続されるが、導線５は金線である。   The GaN-based indigo light chip 3 has an integral structure with a red fluorescent powder layer capable of emitting red light of 710 nm by the silica gel layer 2 or the epoxy resin layer, and the silica gel or the epoxy resin is made in a mass ratio of 2:10. , And agitation with a red fluorescent powder layer capable of emitting red light of 710 nm wavelength, and thereafter, bonded to the GaN-based indigo light chip 3 by an adhesive mixture formulated in a predetermined proportion, and placed on the GaN-based indigo light chip 3 The positive and negative electrodes are connected to the positive and negative electrodes installed on the bracket 1 by a conductive wire 5, and the conductive wire 5 is a gold wire.

また、本ＬＥＤ植物生長ランプは、シーラント層６や、レンズ７、プラスチックジャケット８およびアルミニウム基板９を含み、前記シーラント層６は前記赤色蛍光粉末層４上にコーティングされ、前記レンズ７は前記シーラント層６に接着され、前記プラスチックジャケット８は粘着剤層１０によって前記レンズ７と固定接続され、さらに前記プラスチックジャケット８は前記アルミニウム基板９上に設置される。   The LED plant growth lamp includes a sealant layer 6, a lens 7, a plastic jacket 8, and an aluminum substrate 9. The sealant layer 6 is coated on the red fluorescent powder layer 4, and the lens 7 is the sealant layer. 6, the plastic jacket 8 is fixedly connected to the lens 7 by an adhesive layer 10, and the plastic jacket 8 is installed on the aluminum substrate 9.

好ましくは、導線５は出力電極１１によってアルミニウム基板９と接続される。   Preferably, the conductive wire 5 is connected to the aluminum substrate 9 by the output electrode 11.

既存技術の窒化物の赤色蛍光粉末層の調製プロセスは煩雑で、生産コストが高いが、上記方法による窒化物蛍光粉末の調製プロセスは簡単で、生産コストも低い。このような調製方法によって調製されたＬＥＤ植物生長ランプは実用性が強い。本考案のＬＥＤ植物生長ランプにおいて、植物ＬＥＤ固体光源パッケージのプロセスは図２に示されている通りで、図２に示されているのは植物ＬＥＤ個体光源パッケージフローチャートで、植物ＬＥＤ固体光源のパッケージプロセスを説明したものである。   The preparation process of the nitride red fluorescent powder layer of the existing technology is complicated and the production cost is high, but the preparation process of the nitride fluorescent powder by the above method is simple and the production cost is low. The LED plant growth lamp prepared by such a preparation method is highly practical. In the LED plant growth lamp of the present invention, the process of the plant LED solid light source package is as shown in FIG. 2, and FIG. 2 shows the plant LED solid light source package flowchart, and the package of the plant LED solid light source package Describes the process.

上記明細書での掲載とアドバイスによって、本考案の所属分野の技術者なら、上記実施方式に対して適当な変更と修正を行うことができる。そのため、本考案は上記に記載された内容と具体的な実施方式に限るものではなく、本考案に対しる修正と変更も本考案の権利請求の範囲に所属される。これだけでなく、本明細書には一部の特定の用語が使われているが、これらの用語は説明の便利を図ったもので、本考案に対していかなる制限条件にもならない。
With the publication and advice in the above specification, an engineer in the field to which the present invention belongs can make appropriate changes and modifications to the above implementation method. Therefore, the present invention is not limited to the above-described contents and specific implementation methods, and modifications and changes to the present invention belong to the scope of the claims of the present invention. In addition, although some specific terms are used in the present specification, these terms are for convenience of explanation and do not constitute any limitation to the present invention.

Claims (6)

ブラケット（１）とＧａＮ系藍色光チップ（３）を含み、前記ＧａＮ系藍色光チップ（３）は前記ブラケット（１）上に設置され、前記ＧａＮ系藍色光チップ（３）の表面には赤色蛍光粉末層（４）がコーティングされていることを特徴とするＬＥＤ植物生長ランプ。   It includes a bracket (1) and a GaN-based indigo light chip (3). The GaN-based indigo light chip (3) is installed on the bracket (1), and the surface of the GaN-based indigo light chip (3) is red. An LED plant growth lamp, wherein the fluorescent powder layer (4) is coated. 前記赤色蛍光粉末層（４）は窒化物の赤色蛍光粉末層からなり、前記ＧａＮ系藍色光チップ（３）は粘着層（２）によって窒化物の赤色蛍光粉末層（４）と接着されてインテグラル構造となることを特徴とする請求項１に記載のＬＥＤ植物生長ランプ。   The red fluorescent powder layer (4) is composed of a nitride red fluorescent powder layer, and the GaN-based indigo light chip (3) is bonded to the nitride red fluorescent powder layer (4) by an adhesive layer (2) to be integrated. The LED plant growth lamp according to claim 1, wherein the LED plant growth lamp has a rugged structure. 前記粘着層（２）はシリカゲル層又はエポキシ樹脂層からなることを特徴とする請求項２に記載のＬＥＤ植物生長ランプ。   3. The LED plant growth lamp according to claim 2, wherein the adhesive layer (2) comprises a silica gel layer or an epoxy resin layer. 前記ＧａＮ系藍色光チップ（３）上に設置さえる正負極チップは、導線（５）によってブラケット（１）上に設置される正負極チップと接続されることを特徴とする請求項１に記載のＬＥＤ植物生長ランプ。   The positive / negative electrode chip installed on the GaN-based indigo light chip (3) is connected to the positive / negative electrode chip installed on the bracket (1) by a conductive wire (5). LED plant growth lamp. シーラント層（６）や、レンズ（７）、プラスチックジャケット（８）およびアルミニウム基板（９）を含み、前記シーラント層（６）は前記赤色蛍光粉末層（４）上にコーティングされ、前記レンズ（７）は前記シーラント層（６）に接着され、前記プラスチックジャケット（８）は粘着剤層（１０）によって前記レンズ（７）と固定接続され、さらに前記プラスチックジャケット（８）は前記アルミニウム基板（９）上に設置されることを特徴とする請求項１〜４のいずれか一に記載のＬＥＤ植物生長ランプ。   It includes a sealant layer (6), a lens (7), a plastic jacket (8), and an aluminum substrate (9). The sealant layer (6) is coated on the red fluorescent powder layer (4), and the lens (7 ) Is bonded to the sealant layer (6), the plastic jacket (8) is fixedly connected to the lens (7) by an adhesive layer (10), and the plastic jacket (8) is further connected to the aluminum substrate (9). The LED plant growth lamp according to claim 1, wherein the LED plant growth lamp is installed on the LED lamp. 前記導線（５）は出力電極（１１）によって前記アルミニウム基板（９）と接続されることを特徴とする請求項５に記載のＬＥＤ植物生長ランプ。   6. The LED plant growth lamp according to claim 5, wherein the conducting wire (5) is connected to the aluminum substrate (9) by an output electrode (11).
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107726071A (en) * 2017-11-01 2018-02-23 四川蓝翱兆丰科技有限公司 A kind of ecological fresh-keeping illuminating lamp and freshness preserving equipment
CN109644718A (en) * 2018-11-22 2019-04-19 杭州汉徽光电科技有限公司 Plant light compensation LED light source and the lamps and lanterns for using the light source
CN112930915A (en) * 2021-01-29 2021-06-11 浙江英特来光电科技有限公司 Packaged bowl and cup lamp with adjustable light source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107726071A (en) * 2017-11-01 2018-02-23 四川蓝翱兆丰科技有限公司 A kind of ecological fresh-keeping illuminating lamp and freshness preserving equipment
CN109644718A (en) * 2018-11-22 2019-04-19 杭州汉徽光电科技有限公司 Plant light compensation LED light source and the lamps and lanterns for using the light source
CN112930915A (en) * 2021-01-29 2021-06-11 浙江英特来光电科技有限公司 Packaged bowl and cup lamp with adjustable light source

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