JP3182031B2 - Selective plating method and circuit board manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a selective plating method and a method for manufacturing a circuit board using the selective plating method.

[0002]

2. Description of the Related Art Conventionally, there is a method of obtaining a circuit board by performing selective plating on the surface of a base material without using a resist mask. In this case, after performing a treatment for imparting a catalytic function by the attachment of the plating catalyst to the base material surface, a laser beam is irradiated onto the unnecessary plating area on the base material surface to deprive the activity of the plating catalyst in the unnecessary plating area. By losing the catalytic function,
A selective plating method for selectively forming a plating film on a required plating area of the substrate surface not irradiated with the laser beam is used (Japanese Patent Application Laid-Open No. 61-6892).

The conventional selective plating method has an advantage that a resist mask is not required, but has a problem that pattern compatibility is low. For example, depending on the laser beam irradiation pattern, it may take a long time to irradiate the laser beam, or depending on the base material, the circuit pattern accuracy may not be sufficient, or the controllability of the edge shape of the circuit pattern may be poor. Or

The prolongation of laser beam irradiation occurs in the case of a circuit pattern (plating pattern) having a fine portion in the laser beam irradiation pattern. The decrease in circuit pattern accuracy occurs when the surface of the base material to be plated has irregularities (three-dimensional shape). The problem of controllability of the edge shape of the circuit pattern occurs when it is desired to perform plating in which the edges are strictly straight edges.

[0005]

SUMMARY OF THE INVENTION In view of the above circumstances, it is an object of the present invention to provide a plating method applied to a substrate surface and a method of manufacturing a circuit board, which is remarkably practicable and rich in circuit pattern compatibility. As an issue.

[0006]

In order to solve the above-mentioned problems, in the selective plating method according to the present invention, after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film to the surface of the base material, By irradiating an electromagnetic wave beam onto a plating-free area on the surface of the material to selectively eliminate the plating catalyst function or the metal film in the plating-free area, and selecting the plating area on the base material surface where the electromagnetic wave beam has not been irradiated. In forming the plating film in a specific manner, as a first mode, while moving the irradiation position of the electromagnetic wave beam on the plating unnecessary area by relative movement of the base material and the electromagnetic wave beam , the moving speed of the electromagnetic wave beam is reduced. By changing the irradiation width of the electromagnetic wave beam by changing it, as a second mode, plating is unnecessary due to the relative movement of the base material and the electromagnetic wave beam. In addition to moving the irradiation position of the electromagnetic wave beam above, the irradiation width of the electromagnetic wave beam on the substrate surface is measured during or immediately after irradiation, and the irradiation width of the electromagnetic wave beam is controlled based on this measurement result. As a third mode, the irradiation position of the electromagnetic wave beam on the unnecessary plating area is moved by the relative movement of the base material and the electromagnetic wave beam, and the surface of the base material has an uneven shape. As a fourth mode, the irradiation position of the electromagnetic wave beam is moved on a plating unnecessary area by the relative movement of the base material and the electromagnetic wave beam, and the energy as the electromagnetic wave beam is taken as a fourth mode. A configuration using a laser beam in a beam mode in which the periphery of the distribution is steep is adopted. As a fifth mode, the relative position between the base material and the electromagnetic wave beam is adjusted. Performs the movement of the irradiation position of the electromagnetic wave beam on plating unnecessary area by moving, taking the configuration in which the irradiation of the electromagnetic wave beam through a beam shaping mask which shields the edges of the electromagnetic wave beam,
As a sixth mode, the irradiation position of the electromagnetic wave beam on the unnecessary plating area is moved by the relative movement of the base material and the electromagnetic wave beam, and the spot shape of the electromagnetic wave beam is changed to a square shape, a rectangular shape, and an elliptical shape. In a seventh mode, the irradiation position of the electromagnetic wave beam on the plating unnecessary area is moved by relative movement of the base material and the electromagnetic wave beam, and the base material and the electromagnetic wave are moved. The eighth embodiment is configured to superimpose relative vibration on the relative movement of the beam, and as an eighth mode, the relative movement of the base material and the electromagnetic wave beam can move the irradiation position of the electromagnetic wave beam on the plating unnecessary area. Do,
The irradiation of the electromagnetic wave beam is performed in a pulse shape, and a configuration is adopted in which adjacent beam spots in the moving direction partially overlap each other on the outer periphery. As a ninth mode, the relative position between the base material and the electromagnetic wave beam is set. The irradiation position of the electromagnetic wave beam is moved on the plating unnecessary area by a specific movement, the irradiation of the electromagnetic wave beam is performed in a pulse shape, and adjacent beam spots (marks irradiated in a spot shape) in the moving direction are mutually. The beam spots between the adjacent rows are intermittently moved so that their moving pitches are shifted from each other by about ピ ッ チ pitch, while being partially overlapped on the respective outer circumferences.

[0007] Examples of the treatment for imparting the plating catalyst function in the present invention include a treatment for electroless plating in which a substrate is immersed in a solution containing Pd, and then activated and a Pd nucleus is attached. In this case, as a form of disappearance of the plating catalyst function due to irradiation of the electromagnetic wave beam, there is a form of removing or deactivating the catalyst itself. In the former case of removing the catalyst, it is preferable to remove a part of the substrate at the same time, since the removal is surely performed.

In the case of the present invention, it is also a useful embodiment to irradiate an electromagnetic wave beam using a base material having a layer having a high absorptivity for an electromagnetic wave beam on its surface.
Pd, A
When at least one of g, Au, Cu, Ni, Cr, and its alloy is a plating catalyst layer or a metal film, the layer having a high electromagnetic wave absorption rate exists on the surface because the electromagnetic wave absorption rate is low. It is preferable to do so. Pd, Ag, A
An embodiment in which an alloy of u, Cu, Ni, and Cr and an element that lowers the thermal conductivity and / or an element that has a low melting point and a high vapor pressure is also preferable because it can be reliably eliminated by irradiation with an electromagnetic wave beam.

The substrate used in the selective plating method of the present invention includes resin-based insulating substrates such as ABS, polyetherimide, and liquid crystal polymer, and ceramic insulating substrates such as alumina ceramics, but is not limited thereto. Not done. The substrate is useful if it is made of a laser permeable material, but may be made of a laser non-transparent material. The surface of these insulating base materials is usually roughened (provided with fine irregularities) in advance, but in this case, a base material in which only the area required for plating is selectively roughened is used. Is preferred. This is because when the plating unnecessary area is a non-roughened surface, the loss of the plating catalyst function and the removal of the metal film for plating base by the irradiation of the electromagnetic wave beam are ensured.

In the case of the present invention, the control of the irradiation width of the electromagnetic wave beam applied to the unnecessary plating area is performed by, for example, adjusting the spot shape (spot shape and size) and the moving speed of the beam, but is not limited thereto. . When forming a circuit on the surface of the base material, the irradiation pattern of the electromagnetic wave beam is the reverse of the circuit pattern. Therefore, it is necessary to use the CAD information of the circuit pattern formed on the surface of the base material as data for controlling the irradiation of the electromagnetic wave beam. Can be advanced efficiently.

According to the selective plating method of the present invention, a three-dimensional circuit board can be manufactured by forming a plating film having a predetermined circuit pattern on the surface of a three-dimensional (concavo-convex) base material. It goes without saying that it may be used for purposes other than manufacturing. The plating method according to the present invention includes:
Examples include electroless plating, electroplating, and a combination of both, and are not limited to a particular plating method.

[0012]

[Function] The width of the electromagnetic wave beam irradiated to the plating unnecessary area is changed by changing the beam spot shape and moving speed.
When the width of the irradiation beam is controlled in accordance with the fineness, the processing can be performed quickly in a thick portion without taking unnecessary time. When the irradiation width is measured during or immediately after the irradiation of the electromagnetic wave beam to irradiate the plating unnecessary area, and the irradiation width of the electromagnetic wave beam is controlled based on the measurement result, there is unevenness on the surface of the base material, and the height of the irradiation position fluctuates. Irrespective of the occurrence or fluctuation of the beam irradiation angle, the irradiation width of the irradiation beam is always kept at a desired value, so that the plating pattern is accurate.

When the irradiation width of the electromagnetic wave beam irradiated to the unnecessary plating area is controlled in accordance with the unevenness of the surface of the base material, there is unevenness on the surface of the base material, so that the irradiation position fluctuates or the beam irradiation angle fluctuates. However, since the width of the irradiation beam is maintained at a desired value, the plating pattern becomes accurate. When a laser beam in a mode in which the periphery of the energy distribution is steep and the boundary is sharp is used as the electromagnetic wave beam to be applied to the unnecessary plating area, the boundary between the plated area and the non-plated area after the plating is completed becomes clear and the finishing accuracy is improved.

An electromagnetic wave beam for irradiating a plating unnecessary area is
When irradiating the base material surface through a beam shaping mask that shields the edge of the electromagnetic wave beam, the peripheral portion of the laser beam is cut by the mask and becomes a laser beam with a clear boundary,
Even in the case of using a laser beam for pulsed irradiation, the boundary between the plated area and the non-plated area after plating is clear, and the finishing accuracy is improved.

If the spot shape of the electromagnetic wave beam irradiated to the unnecessary plating area is square, rectangular, or elliptical, the edge shape of the corner of the irradiation pattern can be obtained.
Even when using a laser beam that performs pulsed irradiation,
The boundary between the plating area and the non-plating area after plating is clear, the finishing accuracy is improved, and the laser beam can be drawn (scanned) at high speed when moving the laser beam in the direction of the long side of the spot shape.

When a relative vibration is superimposed on the relative movement of the electromagnetic wave beam irradiated on the plating-free area and the base material, the boundary between the plating area and the non-plating area after the plating is completed and the finishing precision is improved. In addition, an irradiation pattern thicker than the spot system can be drawn by one scanning. When a pulsed (intermittent) electromagnetic wave beam is applied to the area where plating is not required, the beam spots adjacent to each other in the moving direction partially overlap each other on the outer periphery, and a sharp-pointed metal that can be used as a surge arrester for circuit protection It can be made with the facing structure of the membrane.

An electromagnetic wave beam irradiating in a pulse-like (intermittent) manner to a plating unnecessary area is arranged such that beam spots adjacent to each other in the moving direction partially overlap each other on the outer periphery, and a beam between adjacent rows is formed. If the spots are intermittently moved so that the moving pitches thereof are shifted by about ピ ッ チ pitch, the distance between the sharp portions of the metal film portion becomes longer, electric discharge hardly occurs, and insulation deterioration is suppressed.

When a base material in which only the area required for plating is selectively roughened is used, the roughening is not performed in the portion where the catalytic function is lost or the portion where the metal film is removed. The removal, inactivation, or metal removal is ensured, and no plating film is generated in the area where plating is not required. In addition, the plating film is firmly adhered to the area requiring plating because it is a roughened surface.

When a part of the base material is scraped off when the laser beam is irradiated to the plating-free area, the removal of the catalyst or the metal film is surely performed, and a plating film is formed in the plating-free area. There is no such thing. When an electromagnetic wave beam is irradiated in a state where a layer having a high electromagnetic wave absorption rate is formed on the surface of the base material, removal, inactivation, or metal removal of the catalyst can be reliably performed even with a low energy laser beam.

Pd, Ag, Au, Cu, N
When an alloy of i, Cr and an element that lowers the thermal conductivity and / or an element having a low melting point and a high vapor pressure is used to perform a plating catalyst function imparting process or a metal film forming process, a catalyst layer or a metal film is formed. Since the catalyst is easily removed, removal or inactivation of the catalyst or removal of the metal film can be reliably performed even with a low energy laser beam.

As the irradiation control data of the electromagnetic wave beam,
The use of CAD information of a circuit pattern formed on the surface of the base material allows the CAD information to be promptly determined for the irradiation position and spot diameter (irradiation width). When a substrate made of a laser-transmissive material is used, it is possible to easily control laser beam irradiation conditions, to solve the problem of flying objects, and to simultaneously process a plurality of substrates.

When a three-dimensional substrate surface is plated by the selective plating method of the present invention, a three-dimensional circuit board can be obtained.

[0023]

Embodiments of the present invention will be described below. Of course,
The present invention is not limited to the following embodiments. -Example 1-In Example 1, for example, the width of an electromagnetic wave beam (width of a scanning line) irradiated to the substrate surface in the selective plating process is changed by changing the beam spot shape (shape and size) and moving speed. Get the board.

When changing the spot shape, adjustment of the defocus amount of the electromagnetic wave beam or adjustment of the energy intensity is performed. In the case of adjusting the defocus amount, as shown in FIG. 1, if the defocus amount is reduced (focused) by moving the irradiation system or the Z-axis of the base material, the width of the electromagnetic wave beam becomes narrower. Increasing the focus amount increases the width of the electromagnetic wave beam. In the case of energy intensity adjustment, as shown in FIG. 2, a laser having a mode having a gentle energy distribution such as a Gaussian distribution is used for an electromagnetic wave beam. If the number is reduced, the width of the electromagnetic wave beam becomes narrower. When changing the moving speed, as shown in FIG.
A laser with a mode having a gentle energy distribution such as a Gaussian distribution uses an electromagnetic wave beam. The width of the electromagnetic wave beam increases as the moving speed (scanning speed) decreases, and the width of the electromagnetic wave beam increases as the moving speed (scanning speed) increases. Narrows.

The surface of an insulating base material such as ABS, polyetherimide, liquid crystal polymer, and alumina ceramic is roughened by treating it with a chromic acid solution, a KOH aqueous solution, phosphoric acid, or the like. The insulating base material is immersed in a solution containing Pd and then activated to perform Pd nucleation (giving a plating catalyst function). Laser (eg,
(YAG laser). The spot diameter of the laser beam is changed according to the pattern width of the plating unnecessary area. FIG.
As shown in (a), a fine portion such as between circuit patterns 5 moves a thin beam 6 at a high speed (drawing), and a wide portion moves a thick beam 7 at a low speed (drawing). The relative movement between the base material 1 and the beams 6 and 7 is performed to scan the unnecessary area with laser. At this time, as shown in FIG. 1, for example, switching between the narrow beam 6 and the thick beam 7 is performed by changing the focal length of the lens for focusing the laser or the distance between the substrate 1 and the lens. If the surface of the substrate 1 is made to coincide with the focal point of the lens, an extremely thin beam can be obtained. The power of the laser is, for example, 0.1 to 1 J / cm ^2.
The moving speed and the laser oscillation intensity are adjusted to be about the same.

Of course, as shown in FIG. 2, the switching between the narrow beam 6 and the thick beam 7 may be performed by increasing or decreasing the oscillation energy amount, or as shown in FIG. 3, by adjusting the moving speed (scanning speed). Switching between the narrow beam 6 and the thick beam 7 can also be performed. The laser intensity or the moving speed is adjusted so that the pattern width of the plating-free area on the surface of the base material and the width of the portion where the laser influence of the beam is, for example, 0.1 to 1 J / cm ² or more coincide. Specifically, in the case of the narrow beam 6, the amount of oscillation energy is reduced or the moving speed is increased, and in the case of the thick beam 7, the amount of oscillation energy is increased or the moving speed is decreased.

Further, as shown in FIG. 4B, when a wide portion is irradiated with the thick beam 7, a slight irradiation leak occurs at the end of the pattern or at the corner, and therefore, the thin beam 6 is applied to the irradiated leak portion. It is desirable to eliminate irradiation leakage. The shape of the edge is more accurate. By this laser beam irradiation, Pd in a plating unnecessary area is removed or inactivated, and the catalytic function is lost.

After losing the catalytic function, a circuit board can be obtained by immersing the substrate in an electroless copper plating solution and applying electroless copper plating only to a required plating area without laser beam irradiation. Example 1
Since the width of the irradiation beam is controlled according to the thickness of the pattern in the plating-free area, the processing can be performed quickly without taking more time than necessary for the thick part. -Example 2-In Example 2, the irradiation width of the electromagnetic wave beam irradiating the substrate surface in the selective plating process was measured during or immediately after the irradiation,
The circuit board is obtained by controlling the irradiation width of the electromagnetic wave beam based on the measurement result. If the surface of the base material has irregularities or the like, the irradiation width of the electromagnetic wave beam varies depending on the irradiation position. Therefore, the irradiation width is constantly monitored and fed back to make the irradiation width accurate.

The surface of an insulating substrate such as ABS, polyetherimide, liquid crystal polymer, or alumina ceramics is roughened by treating it with a chromic acid solution, a KOH aqueous solution, phosphoric acid, or the like. The insulating base material is immersed in a Pd-containing solution and then activated to perform Pd nucleation (giving a plating catalyst function). Laser (eg,
CW-YAG laser) is irradiated. At this time, as shown in FIG. 5, a laser is condensed and irradiated by a lens through, for example, a galvanomirror to scan the entire area of the surface of the insulating base 1 where no plating is required. Base material 1 so that the distance between
Set it on the table. The focus state changes with the movement of the Z table, and the irradiation width of the laser beam can be changed. By doing so, the defocus amount of the laser beam can be controlled by changing the distance between the substrate 1 and the laser optical system so that the irradiation width of the laser beam always has a desired value.

On the other hand, the irradiation width (spot size) on the surface of the substrate 1 immediately after or during laser irradiation is, for example, T
It is monitored by a V-camera, image-processed and measured, and fed back to the drive system of the Z-table. In this way, even if the irradiation position changes due to irregularities on the surface of the substrate 1 or the beam irradiation angle changes and the irradiation width deviates from a predetermined value, the Z table moves immediately, the Z position is adjusted, and the accurate irradiation is always performed. Feedback control is performed so that the width becomes the width.

The laser power is, for example, 0.1 to 1 J /
The moving speed and the laser oscillation intensity are adjusted so as to be about cm ² . By this laser beam irradiation, Pd in a plating unnecessary area is removed or inactivated, and the catalytic function is lost. After the disappearance of the catalytic function, immerse in the electroless copper plating solution,
A circuit board can be obtained by applying electroless copper plating only to a required plating area without laser beam irradiation.

In addition, a laser beam having a gentle energy distribution may be used to perform feedback control of the irradiation width by increasing or decreasing the amount of oscillation energy as shown in FIG. 2, or a moving speed as shown in FIG. Feedback control of the irradiation width may be performed by adjusting (scanning speed). The laser intensity or the moving speed is set as in Example 1 so that the pattern width of the plating-free area on the substrate surface and the width of the portion where the laser influence of the beam is 0.1 to 1 J / cm ² or more, for example, match. Adjust to

In Example 2, the surface of the base material has irregularities,
Even if the irradiation position fluctuates in height or the beam irradiation angle fluctuates, the width of the irradiation beam is always kept at a desired value, so that the circuit pattern is accurate. Example 3 In Example 3, a circuit board is obtained by controlling the irradiation width of the electromagnetic wave beam in accordance with the uneven shape of the substrate surface in the selective plating process.
The height of the irradiation point on the base material surface and the beam irradiation angle to the base material are input in advance as data, so that the desired irradiation width is obtained at that point, or the height of the irradiation point The inclination angles are measured, these are input as data, and a desired irradiation width is obtained at that point, but is not limited thereto.

The surface of an insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, and alumina ceramic is roughened by plasma treatment. Cu, Ni, Pd,
A metal (conductive) film of Cr, Ag, or the like is formed to a thickness of 0.1 to 2 μm to serve as a metal film for a plating underlayer. As shown in FIG. 6, a laser (for example, a Q-switched YAG laser) beam is condensed by a lens through a galvanomirror and radiated to a plating unnecessary area on the surface of the base material, as shown in FIG.
The entire area of the pattern not requiring plating on the surface of the insulating substrate 1 is scanned.

On the other hand, the scattered light from the surface of the substrate 1 is observed by a camera from a position distant from the laser beam irradiation viewpoint, and the Z position and the Z position are determined from the difference between the XY data of the laser beam irradiation and the irradiation point observation data by the camera. The inclination is measured from the change in the position (see FIG. 7). The scanning speed of the laser beam is controlled based on the data of the Z position and the inclination, that is, based on the unevenness of the surface of the base material, and the irradiation intensity of the laser beam exceeds the threshold value at which the metal film can be removed. The width is set to a constant thickness (for example, 150 μm in diameter). A part of the substrate may be removed simultaneously with the metal film. The laser power is, for example, about 0.05 to 1 J / cm ² .

The process of calculating the z position (AS) based on FIG. 7 is as follows. A (x, y, 0): projection point of the irradiation point on the reference plane (XY plane), S (x, y, 0)
z): Irradiation point, S1 (x1, y1, z1): Irradiation point observed by camera, C (0, 0, h): Position of camera. On the other hand, OC: known, A: known from irradiation data, S
1: Observed value of camera. And AS: OC = AS
1: OS1 and therefore AS = OC × ASI ÷ OS
It becomes 1.

By this laser beam irradiation, the metal film in the area where plating is not necessary is removed, and the metal film remains only in the area where plating is necessary in the circuit pattern. Electroplating is selectively performed using the remaining metal film as a cathode. When irradiating a laser beam, a bridge pattern for power supply is formed so that power is supplied to all parts that require plating, and a resist to prevent plating adhesion is applied to this part using an inkjet or dispenser, and then electroplating is performed. Good to do. After electroplating, remove the resist,
The underlying metal film is removed by light etching.

The irradiation width (beam diameter) of the laser beam
May be performed by adjusting the defocus amount in FIG. 1 or adjusting the energy intensity in FIG. The electroplating is, for example, copper plating (thickness: 10 μm). If necessary, a solder resist, Ni plating, and Au plating are applied. For example,
After copper plating in the above process, a solder resist is applied and patterned, and Ni plating is required and / or Au
Ni plating and / or Au plating may be performed by electroless plating while exposing a portion required for plating.

In Example 3, the surface of the base material has irregularities,
Even if the irradiation position fluctuates in height or the beam irradiation angle fluctuates, the width of the irradiation beam is maintained at a desired value, so that the circuit pattern is accurate. Example 4 In Example 4, in the selective plating process, FIG.
As shown in FIG. 8 (a), an electromagnetic wave beam is not a laser beam having a mode in which the peripheral energy distribution is gentle and the boundary is indefinite, and as shown in FIG. A circuit board is obtained by using a laser beam in a mode having a sharp boundary (annular mode = ring mode or the like). This annular mode laser beam can be obtained, for example, by the optical system shown in FIG.

The surface of an insulating base material such as ABS, polyetherimide, liquid crystal polymer, and alumina ceramic is roughened by treating with a chromic acid solution, a KOH aqueous solution, phosphoric acid, or the like. The insulating base material is immersed in a solution containing Pd and then activated to perform Pd nucleation (giving a plating catalyst function). Laser (eg,
(YAG laser) beam is irradiated. The laser is focused by a lens and irradiated, while the relative movement between the substrate and the laser beam is performed to scan the entire area of the insulating substrate surface that does not require plating.

By this laser beam irradiation, P
d is removed or inactivated and loses catalytic function. After the disappearance of the catalytic function, immerse in the electroless copper plating solution,
A circuit board can be obtained by applying electroless copper plating only to a required plating area without laser beam irradiation. In the fourth embodiment, since a laser beam having a clear boundary is used, the boundary between the plating area and the non-plating area after plating is clear, and the finishing accuracy is improved.

Example 5 In Example 5, in the selective plating process, as shown in FIG. 10, the surface of the base material 1 was irradiated with an electromagnetic wave beam through a beam shaping mask that shields the edge of the electromagnetic wave beam. To obtain a circuit board. The surface of the insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, alumina ceramics, etc. is roughened by plasma treatment.

[0043] Cu,
Metal (conductive) film of Ni, Pd, Cr, Ag, etc.
It is formed to a thickness of 2 μm to form a metal film for plating underlayer. A laser (for example, a Q-switched YAG laser) beam is condensed and irradiated by a lens via, for example, a galvanomirror along the contour of the plating-free area on the surface of the substrate, and the insulating substrate surface is scanned. At this time, a laser beam is radiated through a beam shaping mask having a window having an opening in a pattern having a light-shielding portion having the same pattern as that of the circuit pattern and having a pattern substantially the same as that of the plating unnecessary area. Then, the low-energy portion at the periphery of the laser beam is cut, and the boundary between the irradiated portion and the non-irradiated portion of the laser beam becomes clear. The laser power is, for example, about 0.05 to 1 J / cm ² . A part of the base material may be cut at the same time as the metal film.

As shown in FIG. 11, even when the irradiation of the laser beam is pulsed (intermittent) and there is a gap above and below the adjacent spots, that portion is cut and the edge becomes linear. By this laser beam irradiation, the metal film in the unnecessary plating area is removed, and the metal film remains only in the necessary plating area of the circuit pattern.

Electroplating is selectively performed using the remaining metal film as a cathode. When irradiating a laser beam, a bridge pattern for power supply is formed so that power is supplied to all parts that require plating, and a resist to prevent plating adhesion is applied to this part using an inkjet or dispenser, and then electroplating is performed. Good to do. After the electroplating, the resist is peeled off, and the metal film on the insulating surface is removed by light etching.

The electroplating is, for example, copper plating (with a thickness of 10).
μm). If necessary, solder resist, Ni
Plating and Au plating are performed. For example, after copper plating in the above process, a solder resist is applied and patterned to expose Ni plating necessary portions and / or Au plating necessary portions, and Ni plating and / or Au are applied by electroless plating.
Plating should be performed.

In the fifth embodiment, the edge of the laser beam is cut with a mask to form a laser beam with a clear boundary. Therefore, even when a pulsed laser beam is used, the laser beam after plating is finished. The boundary between the plating area and the non-plating area is clear, and the finishing accuracy is improved. -Embodiment 6- In Embodiment 6, in the selective plating process, the spot shape of the electromagnetic wave beam 3 is made into a square shape as shown in FIG. 12A or a long square shape as shown in FIG. 12B. Alternatively, a circuit board is obtained as an elliptical shape as shown in FIG. Such various spot shapes of the laser beam 3 are created using an optical element such as an aperture, a mask, a lens or a prism. In order to change the direction of the long side, an optical element such as an aperture, a mask, a lens or a prism may be rotated.

The surface of the insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, and alumina ceramics is roughened by plasma treatment on a flat surface or an uneven surface. Cu, Ni, Pd,
A metal (conductive) film of Cr, Ag, or the like is formed to a thickness of 0.1 to 2 μm to serve as a metal film for a plating underlayer. A laser (for example, a Q-switched YAG laser) beam is condensed by a lens through, for example, a galvanometer mirror and irradiated along a contour line of a plating unnecessary area on the surface of the base material, and the surface of the insulating base material is scanned. . At this time, the spot shape of the laser beam is made into a rectangular shape by a combination of a beam expanding lens and a cylindrical lens, and the cylindrical lens is rotated so that the moving direction of the beam and the long side of the rectangular shape coincide.

The laser power is, for example, 0.05 to 1 J
/ Cm ² . A part of the base material may be cut at the same time as the metal film. By this laser beam irradiation, the metal film in the unnecessary plating area is removed, and the metal film remains only in the necessary plating area of the circuit pattern. Electroplating is selectively performed using the remaining metal film as a cathode. When irradiating a laser beam, a bridge pattern for power supply is formed so that power is supplied to all parts that require plating, and a resist to prevent plating adhesion is applied to this part using an inkjet or dispenser, and then electroplating is performed. Good to do. After electroplating, remove the resist,
The metal film on the insulating surface is removed by light etching.

For the electroplating, for example, copper plating (thickness 10
μm). If necessary, solder resist, Ni
Plating and Au plating are performed. For example, after copper plating in the above process, a solder resist is applied and patterned to expose Ni plating necessary portions and / or Au plating necessary portions, and Ni plating and / or Au are applied by electroless plating.
Plating should be performed.

In the sixth embodiment, since the spot shape of the laser beam is square, rectangular, or elliptical, the edge shape of the corner of the irradiation pattern can be obtained, and a laser beam for pulse-like irradiation is used. Even in this case, the boundary between the plating area and the non-plating area after plating is clear, the finishing accuracy is improved, and drawing (scanning) can be performed at a high speed when the laser beam is moved in the long side direction of the spot shape.

Embodiment 7 In Embodiment 7, in the selective plating process, as shown in FIG. 13, in addition to the relative movement of the electromagnetic wave beam 3 and the base material, the relative vibration in the direction along the plane is controlled. To finally obtain a circuit board. The surface of an insulating substrate such as ABS, polyetherimide, liquid crystal polymer, and alumina ceramics is treated with a chromic acid solution, K
It is roughened by treating with an OH aqueous solution, phosphoric acid or the like.

The insulating base material is immersed in a solution containing Pd and then activated to perform Pd nucleation (to provide a plating catalyst function). Laser (eg,
(YAG laser) beam is irradiated. The laser is focused by a lens and irradiated, while the relative movement between the substrate and the laser beam is performed to scan the entire area of the insulating substrate surface that does not require plating. Then, in the seventh embodiment, as shown in FIG. 13, in addition to the normal movement, the relative vibration in the direction along the relative plane is superimposed. In addition,
The oscillation cycle is preferably selected such that a multiple of a half cycle is one pulse of the laser beam.

When the direction of the vibration to be applied is the same as that of the normal movement (scanning), the edge becomes straight even when a pulsed laser beam is used as shown in FIG. When the direction of the vibration to be applied is not the same as that of the normal movement (scanning), for example, orthogonal, the period of the vibration is selected so that a multiple of a half period becomes one pulse of the laser beam, or if a continuous wave laser is used, A pattern of amplitude + spot system thickness can be drawn in one scan.

By this laser beam irradiation, P
d is removed or inactivated and loses catalytic function. After the disappearance of the catalytic function, immerse in the electroless copper plating solution,
A circuit board can be obtained by applying electroless copper plating only to a required plating area without laser beam irradiation. In the seventh embodiment, the boundary between the plating area and the non-plating area after the plating is finished is clear and the finishing precision is high even when the laser beam for performing pulsed irradiation is used without controlling the irradiation width of the laser beam. It improves, and the irradiation pattern thicker than the spot system can be drawn by one scan.

Example 8 In Example 8, in the selective plating process, as shown in FIG. 14A or 14B, pulse-like (intermittent).
The circuit board is finally obtained in such a manner that the beam spots (marks irradiated in the form of spots) adjacent to each other in the moving direction of the electromagnetic wave beam 3 partially overlap each other on the outer periphery thereof. For example, a circuit protection surge arrester is formed on the obtained circuit board.

The surface of the insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, and alumina ceramics is roughened by a plasma treatment on a planar surface or an uneven surface. W, Cu, Ni, P
A metal film of d, Cr, Ag or the like is formed to a thickness of 0.1 to 2 μm to be used as a metal film for plating underlayer. A laser (for example, a Q-switched YAG laser) beam is condensed and irradiated by a lens through, for example, a galvanometer mirror on the surface of the base material that does not require plating to scan the surface of the insulating base material. At this time, as shown by a dashed line in FIG. 14 (a), a spot-shaped rectangular laser beam generated intermittently in a pulsed manner is irradiated at an inclined angle, and adjacent square beam spot marks are formed on the outer periphery of each. If the laser beam is irradiated with a spot-shaped circular laser beam generated in a pulse shape as shown by the dashed line in FIG. 14B, adjacent circular beam spot marks partially overlap each other on the outer periphery. Let me do it. Note that in the case of a spot-shaped rectangular laser beam, the entire peripheral edges facing each other should not be placed in an overlapping relationship.

The laser power is, for example, 0.05 to 1 J
/ Cm ² . A part of the base material may be cut at the same time as the metal film. By this laser beam irradiation, the metal film in the unnecessary plating area is removed, and the metal film remains only in the necessary plating area of the circuit pattern. Electroplating is selectively performed using the remaining metal film as a cathode to obtain a circuit board. The plating substance is a metal or a compound having a small work function.

In the circuit board obtained in the eighth embodiment, at the position 14 where the beam spots overlap in the circuit 4, a facing structure of a metal film having a sharp tip can be formed. The shape, angle, positional relationship, and distance of the tip can be adjusted by the spot shape, size, and overlapping method of the laser beam. In this face-to-face structure, when high-voltage noise is applied, discharge easily occurs due to electrolytic concentration occurring at the tip, so this face-to-face structure can be used as a surge arrester for circuit protection.

Embodiment 9 In Embodiment 9, in the process of the selective plating method, as shown in FIG. 15, a pulsed (intermittent) electromagnetic wave beam 3 is applied to a beam spot (spot) adjacent to the moving direction. (Irradiated traces) are partially overlapped on the outer periphery of each other, and the intermittent movement of the beam spot between adjacent rows is performed by shifting the movement pitch of each other by 1/2 pitch. And finally obtain a circuit board.

The surface of an insulating substrate such as ABS, polyetherimide, liquid crystal polymer, and alumina ceramics is roughened by treatment with a chromic acid solution, a KOH aqueous solution, phosphoric acid, or the like. The insulating base material is immersed in a solution containing Pd and then activated to perform Pd nucleation (giving a plating catalyst function). Laser (eg,
(YAG laser) beam is irradiated. The laser is focused by a lens and irradiated, while the relative movement between the substrate and the laser beam is performed to scan the entire area of the insulating substrate surface that does not require plating. In the ninth embodiment, at this time, the irradiation of the electromagnetic wave beam 3 radiated in a pulse shape is performed in two or more rows, and the irradiation of the electromagnetic wave beam 3 is performed such that the adjacent beam spot marks in the moving direction are aligned with each other. And the intermittent movement of the beam spot between adjacent rows is such that the movement pitch of each beam spot is shifted by １ ／ pitch.

The irradiation of the laser beam with the P
d is removed or inactivated and loses catalytic function. After the disappearance of the catalytic function, immerse in the electroless copper plating solution,
A circuit board can be obtained by applying electroless copper plating only to a required plating area without laser beam irradiation. In the circuit board obtained in the ninth embodiment, the metal film portion protrudes in a sharp state at the overlapping position 14 of the peripheral portions of the beam spots in the circuit 4, and the electrolysis is liable to occur due to the concentration of the electrolysis. It causes deterioration. However, in this case, the intermittent movement of the beam spot between adjacent rows has a mutual movement pitch of one.
The pitch is shifted by 1/2 pitch. As a result, the interval between the sharp portions of the metal film portion becomes longer, so that the discharge hardly occurs and the insulation deterioration is suppressed.

Example 10 In Example 10, as shown in FIG. 16A, a circuit board is obtained by using the base material 1 in which only the required plating area 1a is selectively roughened. As shown in FIG. 16 (a), only in the required area of plating on the surface of an insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, and alumina ceramic, as shown in FIG.
Irradiation is performed with an F excimer laser at an intensity of 0.1 to 0.5 J / cm ² to selectively roughen the surface. This selective roughening may be performed by a method in which the surface of a portion of the forming die to be subjected to selective plating is roughened and transferred.

After the roughening, as shown in FIG. 16B, the insulating base material is immersed in a solution containing Pd and then activated to perform Pd nucleation (giving a plating catalyst function). As shown in FIG. 16C, a laser (for example, a YAG laser) beam is irradiated to the unnecessary plating area on the surface of the insulating base material in the same manner as in Examples 1 to 9. By this laser beam irradiation, Pd in a plating unnecessary area is removed or inactivated, and the catalytic function is lost.

After the disappearance of the catalytic function, as shown in FIG. 16C, the circuit board is immersed in an electroless copper plating solution and subjected to electroless copper plating only in a required plating area without laser beam irradiation. Is obtained. In addition, a circuit board may be obtained as follows. The insulating substrate is selectively roughened in the same manner as above.

[0066] Cu,
Metal (conductive) film of Ni, Pd, Cr, Ag, etc.
It is formed to a thickness of 2 μm to form a metal film for plating underlayer. Laser (eg,
A Q-switched YAG laser beam is applied in the same manner as in Examples 1 to 9. By this laser beam irradiation, the metal film in the unnecessary plating area is removed, and the metal film remains only in the necessary plating area of the circuit pattern.

Electroplating is selectively performed using the remaining metal film as a cathode to obtain a circuit board. In the case of Example 10, since the part where the catalyst function is lost or the part where the metal film is removed is not roughened, the removal of the catalyst, the inactivation or the removal of the metal is ensured, and the plating film is formed in the area where plating is unnecessary. No plating is generated, and the plating film is firmly adhered to the area required for plating because it is a roughened surface.

Embodiment 11 In Embodiment 11, as shown in FIG. 17B, a circuit board is obtained by shaving off a part of the base material 1 when irradiating a laser beam. The surface of an insulating substrate such as ABS, polyetherimide, liquid crystal polymer, alumina ceramics, etc.
It is roughened by treating with an H aqueous solution, phosphoric acid or the like.

After roughening, as shown in FIG. 17A, the insulating base material 1 is immersed in a Pd-containing solution and then activated to perform Pd nucleation (giving a plating catalyst function). . As shown in FIG. 17B, a laser (for example, a YAG laser) beam is irradiated to the unnecessary plating area on the surface of the insulating base material in the same manner as in Examples 1 to 10. This laser beam irradiation is performed so as to cut off the surface of the insulating substrate in the unnecessary area of plating together with Pd, and the laser irradiation energy is set to about 5 to 50 J / cm ² .

After removal of Pd, as shown in FIG. 17C, a circuit board is obtained by immersing in an electroless copper plating solution and performing electroless copper plating only on a required plating area without laser beam irradiation. Can be In addition, a circuit board may be obtained as follows. The surface of an insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, and alumina ceramic is roughened by plasma treatment.

When Cu,
A metal film of Ni, Pd, Cr, Ag or the like is formed to a thickness of 0.1 to 2 μm to be used as a metal film for plating underlayer. Laser (eg,
A Q-switched YAG laser beam is applied in the same manner as in Examples 1 to 10. This laser beam irradiation is performed so as to scrape the surface of the insulating substrate in the unnecessary area with the metal film together with the metal film.
500 μJ / pulse.

By this laser beam irradiation, the metal film in the area where plating is not necessary is removed, and the metal film remains only in the area where plating of the circuit pattern is necessary. Electroplating is selectively performed using the remaining metal film as a cathode to obtain a circuit board. In the case of Example 10, the removal of the catalyst or the removal of the metal film is surely performed so that a part of the insulating base material is also removed, and the plating film is not generated in the plating unnecessary area.

Example 12 In Example 12, as shown in FIG. 18C, a base material having a layer (oxide layer 22) having a high electromagnetic wave absorption on the surface was used, and a high electromagnetic wave absorption was used. The layer is irradiated with an electromagnetic wave beam. Pd, Ag, Au, Cu, Ni, C
r, at least one of the alloys is formed as a plating catalyst material layer or a metal film as a base for plating, but these layers are irradiated with a beam in an improved state because of their low electromagnetic wave absorption. You do it.

FIG. 18 of polyimide, ABS, polyetherimide, liquid crystal polymer, alumina ceramics, etc.
The surface of the insulating base material as shown in FIG. 0.1% of the above Cu etc. on the substrate surface by sputtering etc.
The metal film 21 is deposited to a thickness of about 2 μm and a metal film 21 is formed as shown in FIG.

The surface of the metal film such as Cu is heated to about 100 ° C. for about 1 minute in the atmosphere, and as shown in FIG. 18C, the oxide layer 22 is formed on the metal film surface as a layer having a high electromagnetic wave absorption rate. Form. Note that the oxide layer 22 may be continuously formed on the metal film by another method such as introduction of oxygen gas during sputtering at the end of forming the metal film. Laser (eg,
A Q-switched YAG laser beam is applied in the same manner as in Examples 1 to 11, as shown in FIG.

The energy of this laser beam irradiation is 1
0 to 300 μJ / pulse. It may be performed so that the surface of the non-plating unnecessary area of the insulating base material is scraped together with the metal film. By this laser beam irradiation, the metal film in the unnecessary plating area is removed, and the metal film remains only in the necessary plating area of the circuit pattern.

Electroplating is selectively performed using the remaining metal film as a cathode to obtain a circuit board. In addition, a circuit board may be obtained as described below. The surface of the insulating base material is roughened as described above. The above Cu, Ni, P
A metal film such as d, Cr, and Ag is formed to a thickness of 0.1 to 2 μm to form a metal film.

Then, if the metal film is Cu, Ni and N
If i, carbon black is formed as a layer having a high electromagnetic wave absorption rate. Thereafter, a circuit board is obtained in the same manner as described above. In the case of Example 12, since the laser beam absorptivity is high, even with a low energy laser beam, catalyst removal, inactivation or metal removal is ensured, and there is no damage to the base material. There is no unevenness at the end of the non-irradiation area and no peeling of the metal film or the plating film.

Example 13 In Example 13, Pd, Ag, Au, Cu, N
Using an alloy of i, Cr and an element which lowers the thermal conductivity and / or an element having a low melting point and a high vapor pressure, a plating catalyst function imparting process or a metal film forming process is performed to obtain a circuit board. The surface of an insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, and alumina ceramic is roughened by plasma treatment.

A metal (conductive) film of, for example, a Cu-10% to 20% Zn alloy is formed to a thickness of 0.1 to 2 μm on the surface of the base material by sputtering or the like, and as shown in FIG. Then, a metal film 22 is formed. It is desirable to form the metal film 22 without exposing to the atmosphere after the plasma treatment. Laser (eg,
As shown in FIG. 19B, a Q-switched YAG laser beam is applied in the same manner as in Examples 1 to 11.

The energy of this laser beam irradiation is 1
0 to 300 μJ / pulse. It may be performed so that the surface of the non-plating unnecessary area of the insulating base material is scraped together with the metal film. By this laser beam irradiation, the metal film in the unnecessary plating area is removed, and the metal film remains only in the necessary plating area of the circuit pattern.

Electroplating is performed using the remaining metal film as a cathode, or electroless plating is performed to obtain a circuit board.
In addition, a circuit board may be obtained as described below. The surface of the insulating substrate is roughened in the same manner as described above. On the substrate surface by sputtering or the like, for example, Cu-A
A metal film having a low thermal conductivity such as a 1 alloy is formed with a thickness of 0.1 to 2 μm.

Irradiation with a laser beam is performed in the same manner as described above, and the metal film is left only in the area where plating of the circuit pattern is required. Plating is performed in the same manner as above to obtain a circuit board. In the case of Example 13, the irradiation energy is hardly diffused due to a decrease in thermal conductivity, and an element having a low melting point and a high vapor pressure (for example, Zn)
, Sn, etc.) can remove the metal layer at a relatively low temperature, so that even with a low-energy laser beam, the catalyst can be reliably removed or inactivated, or the metal film can be removed, and the base material can be damaged. No irregularities are formed at the end of the non-irradiation area due to damage to the base material, and there is no peeling of the metal film or the plating film.

Embodiment 14 In Embodiment 14, CAD information of a circuit pattern formed on the surface of a base material is used as data for controlling the irradiation of an electromagnetic wave beam in the selective plating process. The CAD information is used as basic data for determining an irradiation position and a spot diameter (irradiation width). A circuit / non-circuit boundary line is calculated from the circuit center line data and the circuit width data.

The minimum value of the width of the non-circuit portion is calculated. Adjust the laser spot diameter to less than the minimum non-circuit width. The offset amount corresponding to the radius of the laser spot diameter is calculated. The laser irradiation center line offset from the circuit / non-circuit boundary line to the non-circuit portion is calculated.

The irradiation order is determined so that the laser stop period is minimized (so that the total movement length of the irradiation position without laser irradiation from a continuous contour to be irradiated to another contour is minimized). I do. , Are input to the galvanomirror control device to perform laser scanning. The above is shown in a flowchart in FIG.

In the fourteenth embodiment, as the data for controlling the irradiation of the electromagnetic wave beam, the C of the circuit pattern formed on the surface of the base material is used.
Since the AD information is used, necessary irradiation positions and spot diameters (irradiation widths) can be quickly determined, and the overall processing time can be reduced. -Example 15-In Example 15, a circuit board is obtained by performing selective plating using a base material made of a laser permeable material.

The surface of the insulating base material that transmits YAG laser such as polyetherimide is plasma-treated to be roughened. The metal film of Cu or the like is formed to a thickness of 0.1 to 2 μm on the substrate surface by sputtering or the like. After plasma treatment,
It is desirable to form a metal film without exposure to the air.

A laser (for example, a Q-switched YAG laser) beam is applied to a region where plating is not required on the surface of the insulating base material, as shown in FIG.
As shown in (a) of FIG. 1, irradiation is performed in the same manner as in each of Examples 1 to 14 described above. The energy of this laser beam irradiation is 50 to 500 μJ / pulse. It may be performed so that the surface of the non-plating unnecessary area of the insulating base material is scraped together with the metal film. The metal film in the area where plating is not required is removed by laser beam irradiation, and the metal film remains only in the area where plating is required in the circuit pattern.

Electroplating is performed using the remaining metal film as a cathode, or electroless plating is performed to obtain a circuit board. Since the base material is not damaged even when the laser beam is irradiated to some extent than when the metal film or the like is removed, the condition control is easy. In addition, a circuit board may be obtained as follows.

Roughening and metal film formation are performed in the same manner as described above. As shown in FIG. 21B, a laser (for example, a Q-switched YAG laser) beam is irradiated from the back surface of the base material to the area of the insulating base material that does not require plating, in the same manner as in the above-described Examples 1 to 14. . The energy of this laser beam irradiation is
50 to 500 μJ / pulse. It may be performed so that the surface of the non-plating unnecessary area of the insulating base material is scraped together with the metal film. The metal film in the area where plating is not required is removed by laser beam irradiation, and the metal film remains only in the area where plating is required in the circuit pattern.

In addition to the ease of controlling the conditions, the scattered substances coming out of the base material adhere to the optical system such as the laser lens,
There is no change in incident energy due to scattered objects obstructing the optical path. A circuit board is obtained in the same manner as above. Further, a circuit board may be obtained as follows.

Roughening and metal film formation are performed in the same manner as described above. Two or more insulating substrates are aligned and stacked,
As shown in FIG. 21C, a laser (for example, a Q-switched YAG laser) beam is irradiated from the back surface of the base material in the same manner as in each of the above-described Examples 1 to 14 to the plating unnecessary area.
The energy of this laser beam irradiation is 50-500 μ
J / pulse. It may be performed so that the surface of the non-plating unnecessary area of the insulating base material is scraped together with the metal film. The metal film in the area where plating is not required is removed by laser beam irradiation, and the metal film remains only in the area where plating is required in the circuit pattern.

In addition to the ease of condition control and the problem of flying objects, simultaneous processing of a plurality of sheets becomes possible. A circuit board is obtained in the same manner as above. In the case of the fifteenth embodiment, it is possible to relax the irradiation conditions, solve the problem of flying objects, and simultaneously process a plurality of sheets.

Example 16 In Example 16, a circuit pattern is formed on the surface of a three-dimensional base material by the selective plating method used in any of Examples 1 to 15 to obtain a circuit board. A three-dimensional surface of an insulating base material such as polyimide, ABS, polyetherimide, liquid crystal polymer, and alumina ceramic is roughened by plasma treatment.

[0096] Cu,
A metal film of Ni, Pd, Cr, Ag or the like is formed to a thickness of 0.1 to 2 μm to be used as a metal film for plating underlayer. Then, as shown in FIG. 22, the base material 1 is placed on an XY table, and a laser (for example, a Q-switch YAG laser) beam is applied along the contour line or inside the positioned plating-free area on the positioned three-dimensional base material surface. For example, irradiation is performed through a galvano mirror (or a polygon mirror) to scan the surface of the substrate 1. The base material is moved so that the range that cannot be seen from the viewpoint of the galvanomirror becomes the viewing range on the XY table, and the laser beam is similarly irradiated.

The laser power is, for example, 10 to 300 μm.
J / pulse. Further, a part of the base material may be cut at the same time as the metal film. The metal film in the area where plating is not required is removed by laser beam irradiation, and the metal film remains only in the area where plating is required in the circuit pattern. If electroplating is selectively performed using the remaining metal film as a cathode, a three-dimensional circuit board can be obtained.

Further, a circuit board can be obtained as follows. Roughening and metal film formation are performed in the same manner as above. Then, as shown in FIG. 23, a laser (for example, a Q-switched YAG laser) beam is applied along or inside the contour of the plating unnecessary area on the surface of the positioned three-dimensional base material.
For example, irradiation is performed through a galvano mirror (or a polygon mirror), and a range visible from the viewpoint of the galvano mirror and a range visible through the Z mirror are scanned.

The laser power is, for example, 10 to 300 μm.
J / pulse. Further, a part of the base material may be cut at the same time as the metal film. The metal film in the area where plating is not required is removed by laser beam irradiation, and the metal film remains only in the area where plating is required in the circuit pattern. By performing electroplating in the same manner as described above, a three-dimensional circuit board can be obtained. Further, a circuit board can be obtained as follows.

Roughening and metal film formation are performed in the same manner as above. Then, as shown in FIG. 24, a laser (for example, a Q-switched YAG laser) beam is split by a half mirror along a contour line of a plating unnecessary area on the surface of the positioned three-dimensional base material 1 or inside thereof. Irradiate through the 1 (left) galvanomirror (or polygon mirror), scan the range that can be seen from the viewpoint of the first galvanomirror, and scan the range that cannot be seen from the viewpoint of the first galvanomirror.
Irradiation and scanning are performed via a second (right-side) galvanometer mirror (or polygon mirror) located at a viewpoint in which this range can be seen. Irradiation by the second galvanomirror may be performed after irradiation by the first galvanomirror, or 2
Two beams may be obtained by two laser oscillators or beam splitters, and irradiation by the first galvanomirror and irradiation by the second galvanomirror may be performed simultaneously.

The laser power is, for example, 10 to 300 μm.
J / pulse. Further, a part of the base material may be cut at the same time as the metal film. The metal film in the unnecessary plating area is removed by laser beam irradiation, and the metal film remains only in the required plating area of the circuit pattern. If electroplating is performed in the same manner as described above, a three-dimensional circuit board can be obtained. In addition to the above, a circuit board can be obtained as follows.

Roughening and metal film formation are performed in the same manner as above. Then, as shown in FIG. 25, a laser (for example, a Q-switched YAG laser) beam is applied to the XY galvanometer mirror (or polygon mirror) along or inside the contour of the plating unnecessary area on the surface of the positioned three-dimensional base material 1. ), And scans the range visible from the viewpoint of the XY galvanometer mirror and the range visible through the Z mirror.

The laser power is, for example, 10 to 300 μm.
J / pulse. Further, a part of the base material may be cut at the same time as the metal film. By this laser beam irradiation, the metal film in the unnecessary plating area is removed, and the metal film remains only in the necessary plating area of the circuit pattern. At this time, the laser beam is focused using a lens having a focal point equal to or larger than the step in the pattern formation area. For example, if the step is about ± 5 mm, a lens having a focal length of about 300 mm may be used. If the step is about ± 10 mm, the focal length is about 600 mm.
Use a mm lens. Here, the depth of focus means an allowable width of deviation from the focal length between the substrate surface and the lens. If the depth is within the allowable width, the metal film is appropriately removed. In the case of the present invention, as one mode of the third embodiment in which the irradiation width of the electromagnetic wave beam is controlled according to the uneven shape of the base material surface, a lens that matches the three-dimensional shape of the base material surface is selected as in this embodiment. The form is included.

If electroplating is performed in the same manner as described above, a three-dimensional circuit board can be obtained. In the sixteenth embodiment, a three-dimensional circuit board can be obtained without using a resist mask.

[0105]

According to the present invention, when the width of the irradiation beam is controlled by changing the width of the electromagnetic wave beam irradiated to the plating unnecessary area by changing the spot shape and moving speed of the beam so as to match the width of the pattern, the time required for the thick portion becomes longer than necessary. Processing can be performed quickly without any intervention.
When the irradiation width is measured during or immediately after the irradiation of the electromagnetic wave beam for irradiating the plating unnecessary area, and the irradiation width of the electromagnetic wave beam is controlled based on the measurement result, the irradiation beam width is always maintained at a desired value. The plating pattern is accurate.

If the irradiation width of the electromagnetic wave beam applied to the unnecessary plating area is controlled according to the unevenness of the surface of the base material, the width of the irradiation beam is maintained at a desired value, so that the plating pattern is accurate. When a laser beam in a mode in which the periphery of the energy distribution is steep and the boundary is sharp is used as the electromagnetic wave beam to be applied to the unnecessary plating area, the boundary between the plated area and the non-plated area after the plating is completed becomes clear and the finishing accuracy is improved.

An electromagnetic wave beam for irradiating an unnecessary plating area is
By irradiating the surface of the base material through a beam shaping mask that shields the edge of the electromagnetic wave beam, the boundary between the plated area and the non-plated area after plating is clear, and the finishing accuracy is improved. If the spot shape of the electromagnetic wave beam irradiated to the plating unnecessary area is square, rectangular, or elliptical, the boundary between the plating area and the non-plating area after plating is clear, and the finishing accuracy is improved. When the laser beam is moved in the direction of the long side of the spot shape, high-speed processing can be performed.

When relative vibration is superimposed on the relative movement of the electromagnetic wave beam radiated to the plating unnecessary area and the base material, the boundary between the plating area and the non-plating area after plating is clear, and the finishing accuracy is improved. In addition, an irradiation pattern thicker than a spot system can be drawn by one scanning. When a pulsed (intermittent) electromagnetic wave beam is applied to the area where plating is not required, the beam spots adjacent to each other in the moving direction partially overlap each other on the outer periphery, and a sharp-pointed metal that can be used as a surge arrester for circuit protection It can be made with the facing structure of the membrane.

An electromagnetic wave beam irradiating in a pulse-like (intermittent) manner to a plating unnecessary area is set so that beam spots adjacent in the moving direction partially overlap each other on the outer periphery, and the beam between adjacent rows is irradiated. If the spots are intermittently moved so that the moving pitches thereof are shifted by about ピ ッ チ pitch, the distance between the sharp portions of the metal film portion becomes longer, electric discharge hardly occurs, and insulation deterioration is suppressed.

When a base material in which only the area requiring plating is selectively roughened is used, no plating film is formed in the area where plating is not required, and the area requiring plating is a roughened surface. The plating film is firmly attached. If a part of the substrate is scraped off when the laser beam is irradiated to the plating-free area, it is ensured that a plating film is not generated in the plating-free area.

When an electromagnetic wave beam is irradiated in a state where a layer having a high electromagnetic wave absorptivity is formed on the surface of the base material, the removal, inactivation, or metal removal of the catalyst can be reliably performed even with a low energy laser beam. Pd, Ag, Au,
Cu, Ni, Cr and elements that reduce thermal conductivity and / or
Or, using an alloy with an element with a low melting point and a high vapor pressure,
When the plating catalyst function imparting process or the metal film forming process is performed, the catalyst layer and the metal film are easily removed, so that even with a low-energy laser beam, the catalyst can be reliably removed, inactivated, or the metal film can be removed. become.

As the data for controlling the irradiation of the electromagnetic wave beam,
By using CAD information of a circuit pattern formed on the surface of the base material, the irradiation position and spot diameter (irradiation width) of the CAD information can be quickly determined. When a substrate made of a laser-transmissive material is used, it is possible to easily control laser beam irradiation conditions, to solve the problem of flying objects, and to simultaneously process a plurality of substrates.

If a three-dimensional substrate surface is plated by the selective plating method of the present invention, a three-dimensional circuit board can be obtained.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of control of a laser beam irradiation width by adjusting a defocus amount.

FIG. 2 is an explanatory diagram of control of a laser beam irradiation width by adjusting energy intensity.

FIG. 3 is an explanatory diagram of control of a laser beam irradiation width by adjusting a moving speed.

FIG. 4 is an explanatory diagram showing laser beam irradiation on the substrate surface in the first embodiment.

FIG. 5 is an explanatory view showing laser beam irradiation on a substrate surface in the second embodiment.

FIG. 6 is an explanatory view showing laser beam irradiation on a substrate surface in a third embodiment.

FIG. 7 is an explanatory diagram of a Z position calculation on a substrate surface according to a third embodiment.

FIG. 8 is an explanatory view of a mode of a laser beam in the fourth embodiment.

FIG. 9 is an explanatory diagram showing an annular laser beam used in a fourth embodiment.

FIG. 10 is an explanatory view showing laser beam irradiation on a substrate surface in Example 5.

FIG. 11 is an explanatory diagram showing another laser beam irradiation on the substrate surface in the fifth embodiment.

FIG. 12 is an explanatory diagram illustrating a laser beam irradiation locus in the sixth embodiment.

FIG. 13 is an explanatory diagram illustrating a laser beam irradiation locus in the seventh embodiment.

FIG. 14 is an explanatory diagram illustrating a circuit pattern according to the eighth embodiment.

FIG. 15 is an explanatory diagram illustrating a circuit pattern according to the ninth embodiment.

FIG. 16 is an explanatory diagram showing a circuit board manufacturing process in Example 10.

FIG. 17 is an explanatory diagram showing a circuit board manufacturing process in Example 11.

FIG. 18 is an explanatory diagram showing a circuit board manufacturing process in Example 12.

FIG. 19 is an explanatory diagram showing laser beam irradiation progress in Example 13.

FIG. 20 is a flowchart illustrating an irradiation control data determination process according to the fourteenth embodiment.

FIG. 21 is an explanatory diagram showing laser beam irradiation on a substrate in Example 15.

FIG. 22 is an explanatory diagram showing laser beam irradiation on the substrate surface in Example 16.

FIG. 23 is an explanatory view showing laser beam irradiation on another substrate surface in Example 16.

FIG. 24 is an explanatory view showing laser beam irradiation on another substrate surface in Example 16.

FIG. 25 is an explanatory view showing laser beam irradiation on another substrate surface in Example 16.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating base material 5 Circuit pattern 6 Thin beam 7 Thick beam

Continuing from the front page (72) Inventor Yoshiyuki Uchino Osaka, Kadoma City, Osaka 1048 Odaka, Matsushita Electric Works, Ltd. (72) Inventor Nakajima Isuji Nakajima, Kadoma, Osaka 1048, Kadoma, Matsushita Electric Works, Ltd. (72) Inventor Toshiyuki Suzuki 1048 Kadoma Kadoma, Kadoma City, Osaka Pref. (72) Inventor Hiroaki Kitamura 1048 Kadoma Kadoma, Kadoma City, Osaka Pref. Matsushita Electric Works Co., Ltd. (56) References JP-A-61-6892 (JP, A (58) Field surveyed (Int. Cl. ⁷ , DB name) C23C 18/00 C25D 5/00

Claims (16)

(57) [Claims] 1. A plating treatment in a plating-unnecessary area by irradiating an electromagnetic wave beam onto a plating-unnecessary area on a substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. Moving the irradiation position of the electromagnetic wave beam on the plating unnecessary area by performing the
A selective plating method, wherein the irradiation width of an electromagnetic wave beam is controlled by changing a moving speed . 2. A plating treatment in a plating-free area by irradiating an electromagnetic wave beam onto a plating-free area on the substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. The electromagnetic wave beam irradiation position on the plating-free area is moved by the dynamic movement, and the irradiation width of the electromagnetic wave beam on the substrate surface is measured during or immediately after the irradiation. A selective plating method characterized by controlling the width. 3. A plating treatment in a plating-unnecessary area by irradiating an electromagnetic wave beam onto a plating-unnecessary area on the substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. The electromagnetic wave beam irradiation position on the plating unnecessary area by means of dynamic movement, and the base material surface is uneven, and the irradiation width of the electromagnetic wave beam is controlled according to this uneven shape. Method. 4. A plating treatment in a plating-unnecessary area by irradiating an electromagnetic wave beam onto a plating-unnecessary area on the substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. A selective plating method characterized by moving an irradiation position of an electromagnetic wave beam on a plating unnecessary area by a specific movement, and using a laser beam in a beam mode having a steep energy distribution periphery as the electromagnetic wave beam. 5. A plating treatment in a plating-unnecessary area by irradiating an electromagnetic wave beam onto a plating-unnecessary area on a substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. A selective plating method characterized in that the irradiation position of the electromagnetic wave beam is moved over a plating unnecessary area by a specific movement, and the irradiation of the electromagnetic wave beam is performed through a beam shaping mask that shields an edge of the electromagnetic wave beam. 6. A plating treatment in a plating-unnecessary area by irradiating an electromagnetic wave beam onto a plating-unnecessary area on the substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. Selective movement characterized in that the irradiation position of the electromagnetic wave beam is moved over a plating unnecessary area by a temporary movement, and the spot shape of the electromagnetic wave beam is any one of a square, a rectangle and an ellipse. Method. 7. A plating treatment in a plating-unnecessary area by irradiating an electromagnetic wave beam onto a plating-unnecessary area on the substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. Selectively moving the irradiation position of the electromagnetic wave beam on the plating unnecessary area by performing a specific movement, and superimposing relative vibration on the relative movement of the base material and the electromagnetic wave beam. 8. After plating the surface of the base material with a treatment for imparting a plating catalyst function or forming a metal film, irradiating an electromagnetic wave beam onto the unnecessary plating region of the base material surface, thereby plating the unnecessary plating region. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. Of the irradiation position of the electromagnetic wave beam on the plating unnecessary area by the temporary movement, and the irradiation of the electromagnetic wave beam is performed in a pulsed manner, so that adjacent beam spots in the movement direction partially overlap each other on the outer periphery. A selective plating method characterized in that: 9. A plating treatment in a plating-unnecessary area by irradiating an electromagnetic wave beam onto a plating-unnecessary area on the substrate surface after performing a treatment for imparting a plating catalyst function or a treatment for forming a metal film on the substrate surface. In the selective plating method for selectively forming a plating film on a plating-required area where the electromagnetic wave beam has not been irradiated on the surface of the base material after selectively eliminating the catalytic function or the metal film, the relative position of the base material and the electromagnetic wave beam is reduced. The movement of the irradiation position of the electromagnetic wave beam on the plating unnecessary area is performed by a typical movement, and the irradiation of the electromagnetic wave beam is performed,
In a pulsed manner, adjacent beam spots in the moving direction are made to partially overlap each other on the outer periphery, and the intermittent movement of the beam spots between adjacent rows is about 1/2 pitch. A selective plating method characterized in that the selective plating is carried out so as to be shifted one by one. 10. The selective plating method according to claim 1, wherein a substrate in which only a necessary plating area is selectively roughened is used as the substrate. 11. The selective plating method according to claim 1, wherein a part of the substrate is simultaneously removed by irradiation with an electromagnetic wave beam. 12. The selective plating method according to claim 1, wherein the substrate has a layer having a high absorptivity for an electromagnetic wave beam on a surface thereof. 13. A process for imparting a plating catalyst function or a process for forming a metal film is performed using Pd, Ag, Au, Cu, N
The selective plating method according to any one of claims 1 to 11, wherein the selective plating method is performed using an alloy of i, Cr and an element that reduces thermal conductivity and / or an element having a low melting point and a high vapor pressure. 14. The selective plating method according to claim 1, wherein CAD data of a circuit pattern formed on the surface of the base material is used as the data for controlling the irradiation of the electromagnetic wave beam. 15. The selective plating method according to claim 1, wherein the substrate is a substrate made of a laser permeable material. 16. A method for manufacturing a circuit board, wherein a plating film having a predetermined circuit pattern is formed on a three-dimensional base material surface by the selective plating method according to claim 1.