JP4235945B2 - Metal wiring forming method and metal wiring forming apparatus - Google Patents

Description

  The present invention relates to a metal wiring forming method and a metal wiring forming apparatus, and more specifically, a metal wiring forming method and a metal suitable for use in forming a metal wiring on a substrate for an electronic circuit such as a printed circuit board of an integrated circuit. The present invention relates to a wiring forming apparatus.

  In recent years, a polymer material typified by polyimide is thin, lightweight, flexible, and excellent in insulation, so that the demand for a circuit board for a mobile phone or a computer is increasing.

  Currently, polymer circuit boards that are generally used in the electronics field are often formed of polyimide. When a circuit pattern is formed on a substrate formed of such polyimide, first, a copper foil is formed on the polyimide board. Paste together. Next, the circuit pattern is transferred by a photolithography process, and a metal pattern is formed by wet etching using an acid. Finally, the resist film remaining on the metal pattern is removed, and all the steps for forming the circuit pattern made of metal on the circuit board are completed.

  However, the conventional methods as described above have the following [Problem 1] to [Problem 3].

[Problem 1]
In the conventional technique, each process such as wet etching and resist film removal is complicated, and the number of processes is large.

[Problem 2]
In the conventional method, since the metal pattern is formed by wet etching using an acid, the spatial resolution is limited.

[Problem 3]
In the conventional technique, a large amount of waste liquid such as an organic solution or an acid solution is generated particularly in a wet etching process or a resist film removing process.

  The present invention has been made in view of the above-described various problems of the prior art, and the object of the present invention is to solve the above-described problems 1 to 3 and with a simple process. It is an object of the present invention to provide a metal wiring forming method, a metal wiring forming apparatus, and a substrate for an electronic circuit that can reduce the amount of waste liquid and form metal wiring with high resolution with a small number of processes. .

In order to achieve the above object, according to the first aspect of the present invention, there is provided a metal wiring forming method for forming a metal wiring on a substrate for an electronic circuit. Laser light that irradiates the plasma and the substrate for the electronic circuit by irradiating the substrate with a transparent laser beam and generating plasma close to the surface on which the wiring of the substrate for the electronic circuit is formed And the above interaction causes ablation to occur on the surface of the electronic circuit substrate where the wiring is formed, and the surface of the electronic circuit substrate where the wiring is formed is etched by ablation. a first step of depositing a metal thin film on the bottom surface of the forming simultaneously the etching trench grooves, depositing a metal on the first stage the etching groove formed by the It is obtained as a second stage.

  Therefore, according to the first aspect of the present invention, the metal is deposited by the second step in the etching groove in which the metal thin film is deposited on the bottom surface by the first step. In addition, with a small number of processes, the amount of waste liquid can be reduced and metal wiring can be formed with high resolution.

The invention according to claim 2 of the present invention is a metal wiring forming method for forming a metal wiring on a substrate for an electronic circuit, wherein the base is made of a material having a thermal conductivity smaller than that of the metal. A target having a base and a metal thin film formed on the surface of the base is arranged so that the surface on which the wiring of the electronic circuit board is formed and the metal thin film face each other, and the electronic circuit board The distance between the target and the target is controlled, and a laser beam transparent to the electronic circuit substrate is irradiated to the electronic circuit substrate and the target thin metal film is irradiated to the target. A plasma is generated from the target between the metal thin film of the target and the surface of the electronic circuit board on which the wiring is formed, and the plasma and the electronic circuit board are irradiated with the plasma. -Interact with light, and the above interaction causes ablation to occur on the surface of the electronic circuit board where the wiring is formed, and ablation occurs on the surface of the electronic circuit board where the wiring is formed. A first step of depositing a metal thin film ablated from the metal thin film of the target on the bottom surface of the etching groove at the same time as forming an etching groove by a metal, and a metal in the etching groove formed by the first step And a second stage of depositing.

According to a third aspect of the present invention, in the metal wiring forming method for forming the metal wiring on the electronic circuit board, the surface of the electronic circuit board on which the wiring is formed faces the surface. The target is placed by controlling the distance to the electronic circuit substrate, and the laser beam transparent to the electronic circuit substrate is placed so that the focal point is located on the surface of the target. And irradiating the substrate for the electronic circuit and irradiating the surface of the target between the surface of the target and the surface on which the wiring of the substrate for the electronic circuit is formed from the target. On the surface on which the wiring of the electronic circuit board is formed by generating the plasma, causing the plasma and the laser light applied to the electronic circuit board to interact. By generating ablation, first depositing a metal thin film which is ablated from the target at the same time on the bottom of the etched groove to form an etching groove by ablation on a surface the wiring is formed in the substrate for the electronic circuit And a second step of depositing metal in the etching trench formed by the first step.

  The invention according to claim 4 of the present invention is the invention according to any one of claims 1, 2, or 3, wherein the laser beam irradiated in the first stage is: Pulse laser light is used.

  The invention according to claim 5 of the present invention is the invention according to claim 1, claim 2, claim 3 or claim 4, wherein the second stage is electroless. A metal is deposited in the etching groove by any one of plating using a plating solution, plating using an electrolytic plating solution, or application of solder.

  According to a sixth aspect of the present invention, the invention according to any one of the first, second, third, fourth, or fifth aspects is for the electronic circuit. The substrate is made of a polymer material, and a gold thin film is formed on the bottom surface of the etching groove in the first step, and copper is deposited in the etching groove in the second step.

According to a seventh aspect of the present invention, in the metal wiring forming apparatus for forming the metal wiring on the electronic circuit board, the electronic circuit board having a surface on which the wiring is formed is movably held. Holding means, plasma generating means for generating plasma in the vicinity of the surface on which the wiring of the electronic circuit board held by the holding means is formed, and transparent to the electronic circuit board A laser that irradiates a substrate for the electronic circuit held by the holding means with the laser light and causes the plasma generated by the plasma generating means to interact with the laser light; and the plasma generating means The wiring of the electronic circuit board is formed by the interaction between the plasma generated by the laser and the laser light irradiated from the laser to the electronic circuit board. In by generating an ablation, a first system for depositing a thin metal film on the bottom of the the wires to form an etching groove by ablation on the surface to be formed at the same time the etching grooves in the substrate for the electronic circuit, the first And a second system for depositing metal in the etching trench formed by the above system.

  Therefore, according to the seventh aspect of the present invention, the metal is deposited by the second system in the etching groove in which the metal thin film is deposited on the bottom surface by the first system. In addition, with a small number of processes, the amount of waste liquid can be reduced and metal wiring can be formed with high resolution.

According to an eighth aspect of the present invention, in the metal wiring forming apparatus for forming the metal wiring on the electronic circuit board, the electronic circuit board having a surface on which the wiring is formed is movably held. Holding means, a base made of a material having a thermal conductivity smaller than that of the metal, and a metal thin film formed on the surface of the base, and held by the holding means A target disposed so that a surface of the electronic circuit board on which the wiring is formed and the metal thin film face each other and controlling a distance between the electronic circuit board and the electron A laser beam transparent to the circuit board is irradiated onto the electronic circuit board held by the holding means and the metal thin film of the target is irradiated from the target to the metal of the target. Thin film The plasma generated between the surface of the substrate for the electronic circuit and the surface on which the wiring is formed, and a laser that causes the plasma and the laser beam to interact with each other. The plasma generated from the target and the laser The ablation is generated on the surface on which the wiring of the electronic circuit board is formed by the interaction with the laser light applied to the electronic circuit board from A first system for forming an etching groove by ablation on the surface to be formed and simultaneously depositing a metal thin film ablated from the metal thin film of the target on the bottom surface of the etching groove, and formed by the first system And a second system for depositing metal in the etching trench.

According to a ninth aspect of the present invention, in the metal wiring forming apparatus for forming the metal wiring on the electronic circuit substrate, the electronic circuit substrate having a surface on which the wiring is formed is movably held. Controlling the distance between the holding means and the surface of the electronic circuit board held by the holding means on which the surface on which the wiring is formed is opposed to the surface and the electronic circuit board. A laser beam that is transparent to the target and the electronic circuit substrate is placed on the electronic circuit substrate held by the holding means so that the focal point is located on the surface of the target. Irradiate and irradiate the surface of the target to generate plasma between the surface of the target and the surface of the substrate for the electronic circuit where the wiring is formed. And a laser that causes the laser beam to interact with each other, and the interaction between the plasma generated from the target and the laser beam irradiated from the laser onto the substrate for the electronic circuit is used for the electronic circuit. Ablation is generated on the surface of the substrate on which the wiring is formed, and an etching groove is formed by ablation on the surface of the electronic circuit substrate on which the wiring is formed, and at the same time , the bottom of the etching groove is ablated from the target. A first system for depositing a thin metal film and a second system for depositing a metal in the etching groove formed by the first system.

  Further, the invention according to claim 10 of the present invention is the invention according to any one of claims 7, 8 or 9, wherein the laser is a pulse laser beam as the laser beam. It is intended to be irradiated.

  The invention described in claim 11 is the invention described in any one of claims 7, 8, 9 or 10, wherein the second system is electroless. A metal is deposited in the etching groove by any one of plating using a plating solution, plating using an electrolytic plating solution, or application of solder.

  The invention according to claim 12 of the present invention is the electronic circuit according to any one of claims 7, 8, 9, 10, or 11 for the electronic circuit. The substrate is made of a polymer material, and a gold thin film is formed on the bottom surface of the etching groove by the first system, and copper is deposited in the etching groove by the second system.

  Since the present invention is configured as described above, it solves the problems 1 to 3 described above, is a simple process, reduces the amount of waste liquid with a small number of processes, and achieves high resolution. There is an excellent effect that a metal wiring can be formed.

  Hereinafter, an example of an embodiment of a substrate of a metal wiring forming method and a metal wiring forming apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a conceptual configuration diagram showing a first embodiment of a metal wiring forming apparatus according to the present invention. In this embodiment, a case is described in which a metal wiring is formed on an electronic circuit substrate (hereinafter simply referred to as “substrate”) such as an integrated circuit printed circuit board to form a circuit pattern. I decided to.

  A metal wiring forming apparatus 10 according to the first embodiment includes a metal thin film forming system 12 for forming a metal thin film, and a metal deposition system 14 used after the metal thin film forming system 12 to deposit metal. It is comprised.

  The metal thin film forming system 12 includes a laser 20 for irradiating laser light, a mirror 22 for changing the optical path of the laser light, a lens 24 for condensing the laser light, and a stage on which the substrate 100 is held. 26 and a target 28 disposed opposite to the surface 100a on which the wiring of the substrate 100 is formed.

  Here, the laser 20, the mirror 22, the lens 24, the stage 26, the substrate 100, and the target 28 are reflected by the mirror 22 and reflected by the mirror 22. The light is condensed by the lens 24, and the laser light condensed by the lens 24 is disposed so as to pass through the substrate 100 and irradiate the target 28.

  In this embodiment, as the substrate 100, a polymer circuit board formed of polyimide is used.

  Further, as the laser 20, a laser beam that can be irradiated with a transparent laser beam that is not absorbed by the substrate 100, that is, a laser beam having a wavelength that is not absorbed by the substrate 100 is selected. It is preferable to use a pulsed laser that irradiates a pulsed laser beam.

  Specifically, a Q-switched Nd: YAG laser was used as the laser 20, and the fundamental wave was set to use a laser beam having a wavelength of 1.06 μm, a pulse width of 6 ns, and a repetition frequency of 15 Hz. Here, the laser light with a wavelength of 1.06 μm irradiated from the laser 20 has absorption in the visible region of the polyimide forming the substrate 100 and almost no absorption in the near infrared region including the wavelength of 1.06 μm. This is a transparent laser beam that is not absorbed by the substrate 100.

  As the lens 24, for example, a condensing lens of about F100 can be used.

  The stage 26 is movable in the X-axis direction, the Y-axis direction, and the Z-axis direction in the XYZ orthogonal coordinate system (see the reference diagram showing the coordinate system in FIG. 1), and holds the substrate 100 and the substrate 100. The relative positional relationship with the laser beam applied to the laser beam is changed in a three-dimensional direction.

  In this embodiment, by moving the stage 26 in the Z-axis direction, the focal position of the laser light condensed by the lens 24 is changed to the surface on which the wiring of the substrate 100 held by the stage 26 is formed. It was set to be positioned on the 100a side (see FIG. 2).

  A target 28 is placed on the upper surface 26 a of the stage 26. The target 28 includes a base 28a made of a glass plate and a metal thin film 28c made of gold (Au) with a thickness of 200 nm formed on the surface 28b of the base 28a. 26 is placed on the stage 26 so as to be positioned on the upper surface 26a side.

  The substrate 100 is placed via a spacer 30 disposed on the metal thin film 28c of the target 28. More specifically, the surface 100a on which the wiring of the substrate 100 is formed, the metal thin film 28c of the target 28, Are opposed to each other so that the substrate 100 is held on the stage 26. The substrate 100 and the target 28 can be set such that the distance W1 (see FIG. 2) between the substrate 100 and the target 28 is, for example, 0 to 5 mm. Can be set with accuracy.

  That is, the distance W1 between the substrate 100 and the target 28 can be arbitrarily set within a range of 5 mm or less. For example, the substrate 100 is disposed on the target 28 without using the spacer 30. Thus, the substrate 100 and the target 28 may be arranged without a gap so that the surface 100a on which the wiring of the substrate 100 is formed contacts the metal thin film 28c of the target 28.

  On the other hand, the metal deposition system 14 includes a tank 32 filled with a plating solution 34. In this embodiment, a copper electroless plating solution is used as the plating solution 34.

  In the above configuration, in order to form a metal wiring on the substrate 100 using the metal wiring forming apparatus 10 according to the present invention, first, a metal thin film is formed on the substrate 100 in the metal thin film forming system 12.

  Specifically, a fundamental wave of an Nd: YAG laser having a wavelength of 1.06 μm is reflected from the laser 20 as a laser beam by the mirror 22 and irradiated to the substrate 100 and the target 28 through the lens 24.

  More specifically, the laser light from the laser 20 is incident on the substrate 100 from the surface 100b side of the substrate 100, passes through the substrate 100, and has a focal point positioned on the surface 100a on which the wiring of the substrate 100 is formed. The light is emitted from the surface 100a on which the wiring is formed, and is irradiated onto the gold thin film 28c of the target 28 disposed on the side opposite to the surface 100b side where the laser beam is irradiated onto the substrate 100.

  At this time, plasma is generated from the target 28 by a fundamental wave of an Nd: YAG laser having a wavelength of 1.06 μm that is transmitted through the substrate 100 and irradiated onto the target 28 to form a plasma plume. 28 and the substrate 100.), ions and radicals are generated.

  Then, a surface 100a on which a wiring facing the target 28 of the substrate 100 is formed by the interaction of light emission from plasma, ions, radicals and the fundamental wave of a 1.06 μm wavelength Nd: YAG laser incident on the substrate 100. (A surface 100a on which the wiring is formed is a surface on which plasma is present.) Ablation occurs, and an etching groove 200 is formed on the surface 100a on which the wiring of the substrate 100 is formed, and etching is performed. A metal thin film 202 made of gold is deposited on the bottom surface 200a of the groove 200 (see FIG. 3A).

  Accordingly, the stage 26 is moved in the XY plane direction, the substrate 100 is scanned in a state where the focal position of the laser beam condensed by the lens 24 is located on the surface 100a side where the wiring is formed, and the focal position is predetermined. When the substrate 100 and the target 28 are continuously irradiated with laser light so as to draw the locus of the circuit pattern, the surface 100a on which the wiring of the substrate 100 is formed is etched with a pattern corresponding to the predetermined circuit pattern. A groove 200 is formed and a metal thin film 202 is deposited on the bottom surface 200 a of the etching groove 200.

  Thus, after the metal thin film 202 is formed in the metal thin film forming system 12, the substrate 100 (see the state shown in FIG. 3A) on which the metal thin film 202 is formed is transferred to the metal deposition system.

  Then, a copper electroless plating solution as a plating solution 34 filled in the tank 32 and maintained at 50 ° C. with the substrate 100 having the etching groove 200 and the metal thin film 202 on the bottom surface 200a formed on the surface 100a on which the wiring is formed. Soak in the solution for a predetermined time. Then, a copper thin film is selectively deposited in the etching groove 200 formed on the surface 100a where the wiring of the substrate 100 is formed, and the circuit pattern of the metal wiring made of the copper thin film on the surface 100a where the wiring of the substrate 100 is formed. Is formed (see FIG. 3B).

  As described above, since the metal wiring forming apparatus 10 according to the present invention includes the metal thin film forming system 12 and the metal deposition system 14, the energy of the first half of the laser light pulse of the laser 20 is the metal of the target 28. Absorbed by the thin film 28c, the metal thin film 28b is ablated to generate laser-produced plasma, and the plasma and laser light interact with each other on the surface 100a on which the wiring of the substrate 100 made of polyimide is formed, thereby forming the wiring. In the etching groove 200 formed in the surface 100a on which the wiring of the substrate 100 is formed, the process in the metal thin film forming system 12 is performed by performing ablation etching on the surface 100a to be formed and simultaneously depositing a metal thin film on the bottom surface 200a of the etching groove 200. Selectively deposit metal In two steps with the step in the metal deposition system 14, it is possible to form the metal wiring.

  Moreover, the process in the metal thin film formation system 12 forms a metal thin film ablated from the metal thin film 28c of the target 28 by laser ablation, and the process in the metal deposition system 14 also deposits metal by plating. This is a very simple process compared to the conventional methods such as wet etching and resist film removal described in the above section “Prior Art”.

  In other words, according to the metal wiring forming apparatus 10 of the present invention, “Problem 1” described in the above section “Prior art” is complicated in each process such as wet etching and resist film removal. In addition, the problem that “the number of processes is large” can be solved, and the metal wiring can be formed with a simple process and with a small number of processes.

  Further, in the metal wiring forming apparatus 10 according to the present invention, since the conventional wet etching method is not used, the “problem 2” described in “Problem 2” described in the section of “Conventional technology” described above, Since the metal pattern is formed by the wet etching used, the problem that the spatial resolution is limited can be solved, and the metal wiring can be formed with high resolution.

  Specifically, as shown in FIG. 4 (a), in the case of conventional wet etching, a process of removing metal from unnecessary portions is indispensable, but in wet etching, isotropic etching is performed. Since the process proceeds (see the arrow shown in FIG. 4A), it is difficult to control the processing line width by under-etching, and it is difficult to obtain a resolution of 10 microns or less.

  On the other hand, as shown in FIG. 4B, in the case of the metal wiring forming apparatus 10 according to the present invention, the plating process in the metal deposition system 14 is also a technique in which metal is deposited isotropically (FIG. 4). 4 (b), the metal is deposited in the etching groove 200 formed in the substrate 100 in the metal thin film forming system 12, and thus does not spread laterally. Therefore, the resolution of the present invention is determined by the processing resolution of the laser beam, and a resolution of about a wavelength (1 micron) can be obtained. For this reason, even if the degree of integration increases and the wiring becomes finer, according to the present invention, it is possible to stably and highly accurately produce a substrate for an electronic circuit.

  In addition, since the conventional wet etching technique is not used in the metal wiring forming apparatus 10 according to the present invention, “Problem 3” described in the section “Prior Art” is particularly “wet in the conventional technique. In the etching process and the resist film removing process, a large amount of waste liquid such as an organic solution or an acid solution is generated, and the amount of waste liquid can be reduced.

  Furthermore, in the metal wiring forming apparatus 10 according to the present invention, since the metal is structurally embedded in the groove (see FIGS. 3B and 4B), a metal wiring that is resistant to peeling and disconnection is formed. can do.

  In the present invention, depending on the laser light irradiation conditions, it is possible to dope metal atoms into the substrate 100 on the bottom surface 200a side of the etching groove 200 formed on the surface 100a on which the wiring of the substrate 100 is formed. (See FIG. 4 (b)). In such a case, according to the present invention, the interface between the bottom surface 200a of the etching groove 200 formed on the surface 100a on which the wiring of the substrate 100 is formed and the metal thin film 202 deposited on the bottom surface 200a is blurred. Since the metal thin film 202 is continuously formed from the bottom surface 200a of the metal thin film 202, the metal thin film 202 is hardly peeled off, and the adhesion strength with the substrate 100 is increased. Since a metal such as a copper thin film is deposited in the etching groove 200 in which the metal thin film 202 having a high adhesion strength is formed on the bottom surface 200a in this way, a plating film is selectively formed on the metal thin film 202 as a plating base. Thus, the circuit pattern of the metal wiring made of the deposited metal is stably maintained on the substrate 100.

  Further, in the metal wiring forming apparatus 10 according to the present invention, the target 28 having the base 28a made of a glass plate and the metal thin film 28c made of gold formed on the surface 28b of the base 28a is disposed. The ablation threshold at which the target 28 is ablated to generate laser-produced plasma can be reduced, and damage to the substrate 100 on which metal wiring is formed can be avoided.

  More specifically, when a short pulse laser is used, even if it is transparent to the wavelength of the laser light, depending on the intensity of the laser light, for example, when the intensity of the laser light is high, multiphoton absorption Will occur. In general, in the case of a polymer material typified by polyimide, the damage threshold caused by multiphoton absorption is smaller than the ablation threshold at which a bulk metal is ablated and laser-generated plasma is generated.

  In other words, if a substrate made of a polymer material is irradiated with laser light having an ablation threshold capable of ablating the target bulk metal, the target is ablated and laser-generated plasma is generated, while metal wiring should be formed. There is a risk of damage to the substrate.

  Therefore, the target 28 employed in the metal wiring forming apparatus 10 according to the present invention includes a base (base 28a) made of a material (glass plate) having a thermal conductivity smaller than the thermal conductivity of the metal, Since the metal (gold) thin film (metal thin film 28 c) formed on the surface is provided, when the target 28 is irradiated with laser light, the thermal conductivity of glass is much higher than that of gold. Therefore, heat is accumulated in the metal thin film 28c of the target 28, heat diffusion into the base 28a made of a glass plate can be suppressed, and the ablation threshold can be reduced.

  As a result, in the present invention, a short pulse laser is used to ablate a metal such as the metal thin film 28c of the target 28 without damaging the substrate 100 on which the metal wiring is formed, thereby generating laser-generated plasma. Metal wiring can be formed on the substrate 100.

  Furthermore, in the metal wiring forming apparatus 10 according to the present invention, the ablation threshold value can be reduced by the configuration of the target 28 as described above, so that the focal position of the laser beam condensed by the lens 24 is set to the metal of the target 28. Instead of being positioned on the thin film 28c side, positioned on the surface 100a side on which the wiring of the substrate 100 held by the stage 26 is formed (see FIG. 2), laser-generated plasma is generated to form metal wiring on the substrate 100. be able to. Since the focal position of the laser beam is located on the surface 100a side of the substrate 100 where the metal wiring is formed in this way, the metal wiring can be formed with higher resolution.

FIG. 5 shows a laser beam intensity of 500 mJ / cm ² , a scanning speed of 50 μm / s, a repetition frequency of 15 Hz, and a sample-target distance (corresponding to the distance W1 shown in FIG. 2). An optical micrograph showing a polyimide film when a process in the metal thin film forming system 12 is completed using a polyimide film having a thickness of 90 μm and a thickness of 40 μm as the substrate 100 is shown.

  As is apparent from the optical micrograph of FIG. 5, a thin gold film is deposited on the polyimide film. At this time, the depth of the processing mark corresponding to the etching groove 200 was 15 μm and the width was 80 μm.

  On the other hand, in FIG. 6, the polyimide film shown in FIG. 5 is transferred to the metal deposition system 14 of the metal wiring forming apparatus 10 according to the present invention described above, and copper is electrolessly plated at 50 ° C. for 4 minutes. An optical micrograph showing a polyimide film when plated is shown.

  As is apparent from the optical micrograph of FIG. 6, a copper thin film is selectively deposited in the processing trace corresponding to the etching groove of the polyimide film. At this time, the thickness of the copper thin film deposited in the processing mark was about 3.7 μm, and the specific resistance was 5 μΩ · cm.

  Next, a second embodiment of the metal wiring forming apparatus according to the present invention will be described with reference to FIGS.

  FIG. 7 is a conceptual block diagram showing a second embodiment of the metal wiring forming apparatus according to the present invention. In FIG. 7, the same or equivalent structure as FIG. 1 is used in FIG. Detailed description of the configuration and operation will be omitted by using reference numerals.

  The metal wiring forming apparatus 40 according to the second embodiment includes a metal thin film forming system 42 for forming a metal thin film, and a metal deposition system 44 used after the metal thin film forming system 42 to deposit metal. It is comprised.

  The metal thin film forming system 42 includes a laser 20 for irradiating laser light, a mirror 22 for changing the optical path of the laser light, a lens 54 for condensing the laser light, and a stage on which the substrate 100 is held. 26, and a target 58 disposed opposite to the surface 100a on which the wiring of the substrate 100 is formed.

  Here, the laser 20, the mirror 22, the lens 54, the stage 26, the substrate 100, and the target 58 are reflected by the mirror 22 and reflected by the mirror 22. The light is collected by the lens 54, and the laser light collected by the lens 54 is arranged so as to pass through the substrate 100 and irradiate the target 58.

  A target 58 is placed on the upper surface 26 a of the stage 26. The target 58 is made of gold (Au), and is placed on the stage 26 so that the bottom surface 58 b is positioned on the upper surface 26 a side of the stage 26.

  The substrate 100 is placed via the spacer 36 disposed on the upper surface 58a of the target 58. More specifically, the surface 100a on which the wiring of the substrate 100 is formed and the upper surface 58a of the target 58 are opposed to each other. Thus, the substrate 100 is held on the stage 26. The substrate 100 and the target 58 can be set so that the distance W2 (see FIG. 8) between the substrate 100 and the target 58 is, for example, 0 to 5 mm, and in that case, 10 μm. Can be set with accuracy.

  That is, the distance W2 between the substrate 100 and the target 58 can be arbitrarily set within a range of 5 mm or less. For example, the substrate 100 is disposed on the target 58 without using the spacer 36. Thus, the substrate 100 and the target 58 may be arranged without a gap so that the surface 100a on which the wiring of the substrate 100 is formed and the upper surface 58a of the target 58 are in contact with each other.

  In this embodiment, by moving the stage 26 in the Z-axis direction, the focal position of the laser light condensed by the lens 54 is positioned on the upper surface 58a side of the target 58 placed on the stage 26. (See FIG. 8).

  As the lens 54, it is preferable to use a lens having a large numerical aperture (NA).

  The spacer 36 is larger than the spacer 30 disposed in the metal wiring forming apparatus 10 of the first embodiment described above, and the distance W2 between the substrate 100 and the target 58 is shown in FIG. It is wider than the distance W1 and has a relatively large sample-target distance.

  On the other hand, the metal deposition system 44 includes a coating device 50 that coats the solder 52.

  In the above configuration, in order to form metal wiring on the substrate 100 using the metal wiring forming apparatus 40 according to the present invention, first, a metal thin film is formed on the substrate 100 in the metal thin film forming system 42.

  Specifically, a fundamental wave of an Nd: YAG laser having a wavelength of 1.06 μm is reflected from the laser 20 as a laser beam by the mirror 22 and irradiated to the substrate 100 and the target 58 through the lens 54.

  More specifically, laser light from the laser 20 is incident on the substrate 100 from the surface 100b side of the substrate 100, is transmitted through the substrate 100, is emitted from the surface 100a that forms wiring, and the substrate 100 is irradiated with laser light. The target 58 is irradiated with the focal point positioned on the upper surface 58a of the target 58 disposed on the opposite side of the surface 100b.

  At this time, plasma is generated from the target 58 by the fundamental wave of the Nd: YAG laser having a wavelength of 1.06 μm that is transmitted through the substrate 100 and irradiated onto the target 58 to form a plasma plume (the plasma is formed by the target). 28 and the substrate 100.), ions and radicals are generated.

  Then, a surface 100a on which a wiring facing the target 58 of the substrate 100 is formed by the interaction of light emission from plasma, ions, radicals, and the fundamental wave of a 1.06 μm wavelength Nd: YAG laser incident on the substrate 100. (A surface 100a on which the wiring is formed is a surface on which plasma is present.) Ablation occurs, and an etching groove 200 is formed on the surface 100a on which the wiring of the substrate 100 is formed, and etching is performed. A metal thin film 202 made of gold is deposited on the bottom surface 200a of the groove 200 (see FIG. 3A).

  Accordingly, the stage 26 is moved in the XY plane direction, and the substrate 100 is scanned in a state where the focal position of the laser beam condensed by the lens 54 is located on the upper surface 58a side of the target 58, and the focal position is a predetermined circuit. When the substrate 100 and the target 58 are continuously irradiated with laser light so as to draw a pattern trajectory, an etching groove 200 having a pattern corresponding to the predetermined circuit pattern is formed on the surface 100a on which the wiring of the substrate 100 is formed. And a metal thin film 202 is deposited on the bottom surface 200 a of the etching groove 200.

  Thus, after the metal thin film 202 is formed in the metal thin film forming system 42, the substrate 100 (see the state shown in FIG. 3A) on which the metal thin film 202 is formed is transferred to the metal deposition system 44.

  Then, the substrate 100 in which the etching groove 200 and the metal thin film 202 on the bottom surface 200a are formed on the surface 100a on which the wiring is formed is set in the coating apparatus 50, and on the surface 100 on which the wiring of the substrate 100 is formed. Solder 52 is poured. Then, solder is selectively deposited in the etching groove 200 formed on the surface 100a where the wiring of the substrate 100 is formed, and a circuit pattern of metal wiring made of solder is formed on the surface 100a where the wiring of the substrate 100 is formed. (See FIG. 3B).

  As described above, in the metal wiring forming apparatus 40 according to the present invention, the metal thin film forming system 42 and the metal deposition system 44 are provided, so that the wiring is formed as in the first embodiment. A process in the metal thin film forming system 42 for performing ablation etching on the surface 100a and simultaneously depositing a metal thin film on the bottom surface 200a of the etching groove 200, and selective etching in the etching groove 200 formed on the surface 100a on which the wiring of the substrate 100 is formed. The metal wiring can be formed in two steps, that is, in the metal deposition system 44 for depositing metal on the metal.

  In addition, the process in the metal thin film formation system 42 forms a metal thin film ablated from the target 58 by laser ablation, and the process in the metal deposition system 44 also deposits metal by solder. This is a very simple process compared to the conventional methods such as wet etching and resist film removal described in the section “Technology”.

  In other words, according to the metal wiring forming apparatus 40 of the present invention, [Problem 1] described in the above section “Prior Art” can be solved, and the metal wiring can be formed with a simple process and a small number of processes. can do.

  Further, in the metal wiring forming apparatus 40 according to the present invention, since the conventional wet etching method is not used, the [Problem 2] described in the section of “Prior Art” can be solved and high resolution is achieved. Metal wiring can be formed on the substrate (see FIGS. 4A and 4B).

  Further, in the metal wiring forming apparatus 40 according to the present invention, since the conventional wet etching method is not used and the process is a complete dry process, [Problem 3] described in the above section “Conventional Technology” is used. It can be solved and waste liquid can be eliminated.

  Furthermore, in the metal wiring forming apparatus 40 according to the present invention, since the metal is structurally embedded in the groove (see FIGS. 3B and 4B), a metal wiring that is resistant to peeling and disconnection is formed. The circuit pattern of the metal wiring made of solder can be stably maintained on the substrate 100.

  Further, in the metal wiring forming apparatus 40 according to the present invention, the lens 54 having a large numerical aperture (NA) is disposed, and the focal position of the laser beam condensed by the lens 54 is positioned on the upper surface 58a side of the target 58. As a result, even if the irradiation intensity of the laser light on the target 58 becomes larger than the irradiation intensity in the substrate 100 and the target 58 is ablated and the ablation threshold for generating laser-generated plasma is exceeded at the target surface. The laser irradiation intensity on the surface of the substrate 100 on which the metal wiring is formed can be made lower than the damage threshold.

  More specifically, when a short pulse laser is used, even if it is transparent to the wavelength of the laser light, depending on the intensity of the laser light, for example, when the intensity of the laser light is high, multiphoton absorption Will occur. In general, in the case of a polymer material typified by polyimide, the damage threshold caused by multiphoton absorption is smaller than the ablation threshold at which a bulk metal is ablated and laser-generated plasma is generated.

  In other words, if a substrate made of a polymer material is irradiated with laser light having an ablation threshold capable of ablating the target bulk metal, the target is ablated and laser-generated plasma is generated, while metal wiring should be formed. There is a risk of damage to the substrate.

  Therefore, in the metal wiring forming apparatus 40 according to the present invention, a lens 54 having a large numerical aperture (NA) is provided so that the focal position of the laser beam condensed by the lens 54 is located on the upper surface 58a side of the target 58. Therefore, when the substrate 100 and the target 58 are irradiated with laser light, the energy of the laser light is concentrated on the upper surface 58a side of the target 58 where the focal position of the laser light is located, and the irradiation area of the laser light is reduced. On the other hand, on the surface 100a on which the wiring of the substrate 100 is formed, the irradiation area of the laser light is larger than the irradiation area on the upper surface 58a of the target 58, and the irradiation intensity is increased. This reduces the irradiation intensity on the upper surface 58a of the substrate and suppresses damage to the substrate 100. Possible (see Figure 8).

  As a result, in the present invention, a short pulse laser is used to ablate the metal of the target 58 without damaging the substrate 100 on which the metal wiring is formed, thereby generating laser-generated plasma. Can be formed.

  Furthermore, in the metal wiring forming apparatus 40 according to the second embodiment of the present invention, the distance W2 between the substrate 100 and the target 58 is ensured by the spacer 36, so that the laser light on the target 58 is emitted. This is effective for making the irradiation intensity larger than the irradiation intensity in the substrate 100.

  In the metal wiring forming apparatus 40 of the second embodiment of the present invention, the target 28 comprising the base 28a and the metal thin film 28c used in the metal wiring forming apparatus 10 of the first embodiment described above is used. Instead, the target 58 can be ablated without damaging the substrate 100 using a simple construction target 58 made of a single metal.

  In the metal wiring forming apparatus 40 according to the second embodiment of the present invention, since the focal position of the laser light is located on the upper surface 58a side of the target 58, the laser light on the surface 100a on which the wiring of the substrate 100 is formed. The irradiation area becomes larger than the irradiation area on the upper surface 58a of the target 58, and there is a concern that the resolution is reduced. However, it is estimated that the irradiation area is about twice (that is, the resolution is 2 μm), which is higher than the conventional method. Are better.

  Further, in the metal wiring forming apparatus 40 according to the second embodiment of the present invention, the lens 54 having a large numerical aperture (NA) is disposed, but such a lens having a large numerical aperture has a very small working distance. Therefore, the lens 54 needs to be quite close to the substrate 100. Here, in the configuration of the present invention, the laser light from the laser 20 is irradiated from the side of the surface 100b that hits the back surface of the surface 100a on which the wiring of the substrate 100 is formed, and the side where ablation occurs (that is, the wiring of the substrate 100 is formed). Therefore, the ablated substance does not adhere to the lens 54 disposed in the vicinity of the substrate 100, and a good operating state can be maintained.

  And in the metal wiring formation apparatus 40 of the 2nd Embodiment of this invention, since the metal deposition system 44 is comprised by the coating device 50 which apply | coats the solder 52, all the processes which form a metal wiring in the board | substrate 100 Can be completely dried.

  The embodiment described above can be modified as shown in the following (1) to (11).

  (1) In the metal wiring forming apparatuses 10 and 40 according to the first and second embodiments described above, a Q-switched Nd: YAG laser is used as the laser 20, but the present invention is not limited to this. Needless to say, various lasers such as a visible laser and an infrared laser can be used in addition to the ultraviolet laser as long as the irradiated laser light is transparent to the substrate 100.

  As the substrate 100, any substrate can be selected as long as the irradiated laser light is transparent to the material, that is, does not absorb the irradiated laser light. For example, when a polymer having an absorption edge shorter than that of polyimide is used, it is possible to use a laser having a shorter wavelength than the laser 20 of the above-described embodiment.

  (2) In the metal wiring forming apparatus 10 of the first embodiment described above, the metal thin film 28c of the target 28 is made of gold (Au), and in the metal wiring forming apparatus 40 of the second embodiment. The target 58 is made of gold, but the metal thin film 28c and the target 58 of the target 28 are made of various metals such as copper (Cu) or metal if plasma is generated by laser light irradiation. In addition, arbitrary things, such as a ceramic, can be selected.

  For the target 28, a material having a thermal conductivity smaller than that of the material used as the metal thin film 28c is adopted as a material for forming the base, depending on the material used as the metal thin film 28c. That's fine.

  (3) In the metal wiring forming apparatus 10 of the first embodiment described above, an electroless plating solution is used as the plating solution 34 of the metal deposition system 14, but it is needless to say that the present invention is not limited to this. There may be configured such that plating is performed by an electrolysis method (electroplating method) using an electrolytic plating solution.

  (4) The focal position of the laser beam condensed by the lens 24 of the metal wiring forming apparatus 10 of the first embodiment and the lens 54 of the metal wiring forming apparatus 40 of the second embodiment. Needless to say, the focal position of the laser beam is not limited to the above-described embodiment. For example, the surface of the targets 28 and 58 opposite to the surface facing the substrate 100, It can be located between the lenses 24 and 54.

  (5) In the metal wiring forming apparatus 10 of the first embodiment described above, the target 28 is disposed, and in the metal wiring forming apparatus 40 of the second embodiment, the lens 54 having a large numerical aperture (NA) is provided. As a result, the ablation threshold at which the targets 28 and 58 are ablated to generate laser-produced plasma can be reduced, and damage to the substrate 100 on which the metal wiring is formed can be avoided. For example, a material having a low ablation threshold, such as copper doped with beryllium, may be used.

  (6) The configuration of the metal wiring forming apparatus 10 (see FIG. 1) of the first embodiment and the configuration of the metal wiring forming apparatus 40 (see FIG. 7) of the second embodiment are respectively You may make it comprise and replace. For example, in place of the metal deposition system 14 of the metal wiring forming apparatus 10 of the first embodiment, if the metal deposition system 44 of the metal wiring forming apparatus 40 of the second embodiment is provided, the dry process of all steps is performed. Can be realized.

  (7) In the metal wiring forming apparatuses 10 and 40 according to the first and second embodiments described above, plasma is generated from the targets 28 and 58 using the laser light emitted from the laser 20, and the substrate 100 is used. Although light emission from plasma and interaction with ions and radicals are exhibited on the surface 100a on which the wiring is formed, the laser light for generating plasma from the targets 28 and 58 is not limited to this. Also, laser light that exhibits light emission from plasma, interaction with ions, and radicals on the surface 100a on which the wiring of the substrate 100 is formed may be separated.

  That is, the laser beam irradiated from the laser 20 is not transmitted through the substrate 100 and irradiated to the targets 28 and 58, but the optical path of the laser beam irradiated from the laser 20 is branched and one is irradiated onto the substrate 100. The other may be irradiated to the targets 28 and 58. Alternatively, a laser for irradiating a laser beam for generating plasma from the targets 28 and 58, and a laser for irradiating the substrate 100 with a laser beam that exerts light emission from the plasma and interaction with ions and radicals. In this case, different lasers may be used.

  (8) In the metal wiring forming apparatuses 10 and 40 according to the first and second embodiments described above, the plasma is generated by irradiating the targets 28 and 58 with laser light. Of course, the targets 28 and 58 may not be disposed, and plasma, ions, and radicals may be generated by other methods.

  For example, the entire system corresponding to the metal thin film forming system is positioned in a vacuum chamber, a pair of high-frequency electrodes are provided in the vacuum chamber, and a high-frequency current is supplied to the high-frequency electrode from a high-frequency power source, thereby Metal wiring may be formed on the substrate 100 by generating plasma and forming ions and radicals at any location within the substrate.

  Thereby, in the case where plasma is generated in a region on the surface 100a side where the wiring of the substrate 100 is formed in the vacuum chamber 16, light emission from the plasma or the like is generated on the surface 100a where the wiring of the substrate 100 is formed. When processing by ablation is performed by the interaction between ions and radicals and laser light incident on the substrate 100, and plasma is generated in a region on the surface 100b side of the substrate 100 in the vacuum chamber 16, The surface 100b of the substrate 100 is processed by ablation by the interaction of light emission from plasma, ions, radicals, and laser light incident on the substrate 100 to form etching grooves 200 on both surfaces of the substrate 100 and the etching grooves. The metal thin film 202 is deposited on the bottom surface 200a of the 200. Possible to become.

  Further, in the metal wiring forming apparatus 40 of the second embodiment, when the distance W2 between the substrate 100 and the target 58 becomes large, the entire metal thin film forming system 42 is located in the vacuum chamber 16. In this way, the laser beam may be irradiated in a vacuum.

  (9) In the above-described embodiment, a mask having a fine pattern corresponding to a predetermined circuit pattern is provided, and laser light that has passed through the mask is condensed by the lenses 14 and 54, and the substrate 100 and the target 28, 58 may be irradiated to form a circuit pattern.

  In the metal wiring forming apparatuses 10 and 40 of the first and second embodiments described above, the substrate 100 is moved relative to the laser beam irradiated onto the substrate 100 without using a mask. The metal wiring can be formed like a single stroke while changing the general positional relationship in a three-dimensional direction. The labor and cost of manufacturing a mask for each circuit pattern can be reduced.

  (10) In the above-described embodiment, the depth of the etching groove 200 formed in the metal thin film forming systems 12 and 42, the film thickness of the metal thin film, or the metal film deposited in the metal deposition systems 14 and 44 The thickness and the like can be easily adjusted to any size by changing the laser irradiation time, irradiation intensity, immersion time in the plating solution, or the like. Further, by changing the material for forming the targets 28 and 58, it is also possible to form the metal wiring with a color corresponding to the material.

  Therefore, the present invention is not limited to forming a circuit pattern on a circuit board, and may be used when forming various metal wirings.

  (11) The above-described embodiment and the modifications shown in (1) to (10) may be combined as appropriate.

1 is a conceptual configuration diagram showing a first embodiment of a metal wiring forming apparatus according to the present invention. It is a conceptual block diagram which shows the principal part of FIG. 1 and shows operation | movement of 1st Embodiment of the metal wiring formation apparatus by this invention. (A) is explanatory drawing which shows the board | substrate when the process in a metal thin film formation system is complete | finished, and a partially expanded view, (b) is explanatory drawing which shows a board | substrate when the process in a metal deposition system is complete | finished. It is a part enlarged view. (A) is explanatory drawing which shows the metal under-etching by the conventional wet etching, (b) is explanatory drawing which shows the embedding of the metal to the etching groove | channel formed by this invention. It is an optical microscope photograph of the surface in which the wiring of a board | substrate is formed. It is an optical microscope photograph of the surface in which the wiring of a board | substrate is formed. It is a conceptual block diagram which shows 2nd Embodiment of the metal wiring formation apparatus by this invention. It is a conceptual block diagram which shows the principal part of FIG. 7 and shows operation | movement of 2nd Embodiment of the metal wiring formation apparatus by this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,40 Metal wiring formation apparatus 12,42 Metal thin film formation system 14,44 Metal deposition system 20 Laser 22 Mirror 24,54 Lens 26 Stage 26a Top surface 28 Target 28a Base 28b Surface 28c Metal thin film 28d Bottom surface 30, 36 Spacer 32 Tank 34 plating solution 50 coating apparatus 52 solder 58 target 58a upper surface 58b bottom surface 100 substrate 100a surface 100b surface on which wiring is formed

Claims (12)

In a metal wiring forming method for forming a metal wiring on a substrate for an electronic circuit,
The substrate for electronic circuit is irradiated with a transparent laser beam to the substrate for electronic circuit, and plasma is generated in proximity to a surface on which the wiring of the substrate for electronic circuit is formed, and the plasma and The electronic circuit board is caused to interact with the laser light irradiated to the electronic circuit board, and the interaction causes ablation on the surface of the electronic circuit board where the wiring is formed. A first step of forming an etching groove by ablation on the surface on which the wiring is formed and simultaneously depositing a metal thin film on the bottom surface of the etching groove;
And a second step of depositing a metal in the etching trench formed by the first step. In a metal wiring forming method for forming a metal wiring on a substrate for an electronic circuit,
A surface on which a wiring of a substrate for an electronic circuit is formed by using a target having a base made of a material having a thermal conductivity smaller than that of the metal and a metal thin film formed on the surface of the base. And the metal thin film are opposed to each other and the distance between the electronic circuit substrate and the target is controlled, and a transparent laser beam is applied to the electronic circuit substrate. Irradiating the circuit board and irradiating the metal thin film of the target, and plasma between the target and the metal thin film of the target and the surface of the electronic circuit board on which the wiring is formed And the plasma and the laser light applied to the electronic circuit substrate interact with each other, and the interaction causes an ablation on the surface on which the wiring of the electronic circuit substrate is formed. The is generated, depositing a metal thin film, wherein the wiring is ablated from a thin film of the metal of the target on the bottom at the same time the etching grooves to form an etching groove by ablation in the plane formed of the substrate for the electronic circuit The first stage,
And a second step of depositing a metal in the etching trench formed by the first step. In a metal wiring forming method for forming a metal wiring on a substrate for an electronic circuit,
The surface on which the wiring of the electronic circuit board is formed and the surface are opposed to each other, and the target is disposed by controlling the distance between the electronic circuit board and the electronic circuit board. A transparent laser beam is irradiated on the surface of the target while irradiating the substrate for the electronic circuit with a focal point positioned on the surface of the target, and from the target to the surface of the target. Plasma is generated between the surface of the electronic circuit substrate and the surface on which the wiring is formed, and the plasma and the laser light applied to the electronic circuit substrate are allowed to interact with each other. Etching by ablation on the surface of the electronic circuit board where the wiring is formed by generating ablation on the surface of the electronic circuit board where the wiring is formed A first step of depositing a ablated metal thin film from said target on a bottom surface of the etched groove at the same time to form a
And a second step of depositing a metal in the etching trench formed by the first step. In the metal wiring formation method of any one of Claim 1, Claim 2, or Claim 3,
The metal wiring forming method, wherein the laser beam irradiated in the first stage is a pulse laser beam. In the metal wiring formation method of any one of Claim 1, Claim 2, Claim 3, or Claim 4,
The second step is a method of forming a metal wiring, wherein the metal is deposited in the etching groove by any one of plating using an electroless plating solution, plating using an electrolytic plating solution, or applying solder. . In the metal wiring formation method of any one of Claim 1, Claim 2, Claim 3, Claim 4, or Claim 5,
The electronic circuit board is formed of a polymer material, a gold thin film is formed on the bottom surface of the etching groove in the first step, and copper is deposited in the etching groove in the second step. Metal wiring formation method. In a metal wiring forming apparatus for forming metal wiring on a substrate for electronic circuits,
Holding means for movably holding a substrate for an electronic circuit having a surface on which wiring is formed;
Plasma generating means for generating plasma in proximity to a surface on which the wiring of the electronic circuit board held by the holding means is formed;
A laser beam transparent to the electronic circuit substrate is irradiated to the electronic circuit substrate held by the holding means, and the plasma generated by the plasma generating means interacts with the laser light. And a laser to be
Ablation is generated on the surface of the electronic circuit board on which the wiring is formed by the interaction between the plasma generated by the plasma generation means and the laser beam irradiated from the laser to the electronic circuit board. A first system for forming an etching groove by ablation on the surface of the electronic circuit board on which the wiring is formed, and simultaneously depositing a metal thin film on the bottom surface of the etching groove;
And a second system for depositing metal in the etching trench formed by the first system. In a metal wiring forming apparatus for forming metal wiring on a substrate for electronic circuits,
Holding means for movably holding a substrate for an electronic circuit having a surface on which wiring is formed;
For the electronic circuit comprising a base made of a material having a thermal conductivity smaller than that of the metal and a metal thin film formed on the surface of the base, and held by the holding means A target disposed so that a surface of the substrate of the substrate on which the wiring is formed and the metal thin film face each other and a distance between the substrate for the electronic circuit is controlled;
A laser beam transparent to the electronic circuit substrate is irradiated to the electronic circuit substrate held by the holding means and the metal thin film of the target is irradiated from the target to the target. A laser that generates plasma between the metal thin film and a surface of the electronic circuit board on which the wiring is formed, and that causes the plasma and the laser beam to interact with each other.
By the interaction between the plasma generated from the target and the laser light irradiated on the electronic circuit substrate from the laser, ablation is generated on the surface of the electronic circuit substrate on which the wiring is formed, A first system for forming an etching groove by ablation on a surface of the electronic circuit board on which the wiring is formed, and simultaneously depositing a metal thin film ablated from the metal thin film of the target on a bottom surface of the etching groove; ,
And a second system for depositing metal in the etching trench formed by the first system. In a metal wiring forming apparatus for forming metal wiring on a substrate for electronic circuits,
Holding means for movably holding a substrate for an electronic circuit having a surface on which wiring is formed;
A target disposed so that a surface on which the wiring is formed and a surface of the electronic circuit board held by the holding unit are opposed to each other and the distance between the electronic circuit board is controlled; ,
A laser beam transparent to the electronic circuit substrate is irradiated to the electronic circuit substrate held by the holding means so that a focal position is located on the surface of the target, and the target Irradiating the surface to generate plasma from the target between the surface of the target and the surface of the electronic circuit board on which the wiring is formed, and the plasma and the laser beam interact with each other A laser and
By the interaction between the plasma generated from the target and the laser light irradiated on the electronic circuit substrate from the laser, ablation is generated on the surface of the electronic circuit substrate on which the wiring is formed, A first system for forming an etching groove by ablation on a surface of the electronic circuit substrate on which the wiring is formed, and simultaneously depositing a metal thin film ablated from the target on a bottom surface of the etching groove;
And a second system for depositing metal in the etching trench formed by the first system. In the metal wiring formation apparatus of any one of Claim 7, Claim 8, or Claim 9,
The laser is a metal wiring forming apparatus that emits pulsed laser light as the laser light. In the metal wiring formation apparatus of any one of Claim 7, Claim 8, Claim 9, or Claim 10,
The second system is a metal wiring forming apparatus that deposits metal in the etching groove by any one of plating using an electroless plating solution, plating using an electrolytic plating solution, or soldering. . In the metal wiring formation apparatus of any one of Claim 7, Claim 8, Claim 9, Claim 10, or Claim 11,
The substrate for the electronic circuit is formed of a polymer material, a gold thin film is formed on the bottom surface of the etching groove by the first system, and copper is deposited in the etching groove by the second system. Metal wiring forming device.