JP3158463U - Heat treatment equipment - Google Patents

Abstract

To provide a heat treatment apparatus that does not cause displacement of a substrate and rubbing of the back surface of a substrate even if the moving speed of a cooling plate is increased, and does not deteriorate cooling performance. A heat treatment unit includes a heat treatment plate 52 on which a wafer W as a substrate is placed to perform heat treatment, and a moving plate 51 configured to be able to move forward and backward to receive and transfer the wafer W to and from the heat treatment plate 52. And an electrostatic chuck that is provided on the surface side of the moving plate 51 and sucks at least the wafer W placed on the moving plate 51 at the time of forward / backward movement. [Selection] Figure 6

Description

  The present invention performs a heat treatment used for a heat treatment performed on a substrate before and after the substrate is subjected to a liquid process such as a resist coating process and a development process on a substrate of a semiconductor manufacturing and FPD (flat panel display) manufacturing apparatus or the like. Relates to the device.

  For example, in a photoresist processing step in the manufacture of semiconductor devices, a resist solution is applied to the surface of a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, and then a predetermined film is formed on the resist film. After the pattern is exposed, a developing solution is applied to the substrate and developed. In performing such a series of processes, a resist coating and developing apparatus and an exposure apparatus have been conventionally used.

  This resist coating and developing processing apparatus includes a coating processing unit and a developing processing unit that individually perform a series of processing necessary for coating and developing processing. The coating processing unit applies a resist solution. The development processing unit performs development processing for developing the exposed substrate. For transporting wafers between the processing units and loading / unloading wafers to / from each processing unit, for example, a substrate transport device configured to be transportable while holding the wafer is used. This includes, for example, a hydrophobic treatment unit and a heat treatment unit which are heat treatment apparatuses (units) for performing heat treatment on the substrate. The hydrophobic treatment unit performs a hydrophobic treatment (adhesion treatment) for improving the fixability of the resist while heating. The heat treatment unit heats the substrate after application of the resist solution to cure the resist film. Another heat treatment unit includes a pre-development heat treatment unit for heating the exposed substrate at a predetermined temperature.

  In the heat treatment unit, which is a heat treatment apparatus, when the substrate is transferred from the substrate transfer device to the heat treatment unit, the cooling plate holds the substrate in the heat treatment portion after being delivered to the cooling plate provided in the heat treatment unit. The substrate is transferred to the plate of the heat treatment unit. That is, it is known that the cooling plate is configured to move forward and backward with respect to the heat treatment unit (see, for example, Patent Document 1).

JP 2006-303104 A (FIGS. 4, 5, and 11)

  In recent years, while improvements are being made to improve the productivity of semiconductor manufacturing equipment, the throughput of the exposure apparatus in the lithography process is becoming 300 sheets per hour, and the resist coating and developing apparatus is also required to meet this throughput. ing. In response to this requirement, it is necessary for the resist coating and developing apparatus to consider shortening of the operation time except for the process time of various processing units.

  The heat treatment apparatus is one of the objects, and it is conceivable to shorten the time for carrying in / out the heat treatment unit that can carry in / out the substrate from the cooling plate to the heating unit. However, if the moving speed of the cooling plate is simply increased, the inertial force of the substrate causes the displacement of the mounting position of the substrate including before and after the movement of the cooling plate and the gap between the substrate mounting gap pin provided on the cooling plate surface and the back surface of the substrate. There is a concern that rubbing may occur and cause particle contamination in the apparatus. Further, there is a concern that the cooling temperature of the substrate unloaded from the heat treatment unit may be transferred to the transfer device without reaching a predetermined temperature by increasing the moving speed.

  The present invention has been made to solve the problems of the above circumstances, and its purpose is not to cause displacement of the substrate or rubbing of the back surface of the substrate even if the moving speed of the cooling plate is increased, and It is to provide a heat treatment apparatus that does not deteriorate the cooling performance.

  In order to solve the above problems, a heat treatment apparatus of the present invention is a heat treatment apparatus for performing a heat treatment on a liquid-treated substrate, a heat treatment plate for placing the substrate and performing the heat treatment, and a substrate for the heat treatment plate. A movable plate configured to be able to move forward and backward for receiving and delivering; and an electrostatic chuck provided on the surface side of the movable plate and attracting at least the substrate placed on the movable plate during the forward and backward movement. It is characterized by comprising (claim 1). In addition, it is preferable that the moving plate includes a flow path for allowing cooling water to flow inside the moving plate in order to cool the placed substrate.

  With this configuration, the substrate placed on the moving plate can be sucked and fixed to the moving plate, so even if the moving speed is increased, the substrate may be displaced from the position where the substrate is placed due to the inertial force of the substrate. No friction with the back surface of the substrate during movement. Further, even if the substrate is slightly warped due to adsorption, the substrate is adsorbed and corrected by the moving plate, so that the cooling time of the substrate can be shortened.

  In the present invention, the electrostatic chuck preferably has a structure in which a film of an electrostatic chuck composed of a printed electrode sheet provided with an electrode on a resin film is attached to the base of the moving plate (claim). Item 3). Furthermore, since the polyimide coating film has an insulating property, the electrode of the printed electrode sheet is preferably configured to be sandwiched between the polyimide coating film and the substrate of the moving plate. 4).

  By configuring in this way, the substrate is prepared as a printed electrode sheet by a method in which an electrode is provided on a resin film sheet processed as a separate body without processing the electrode directly on the substrate surface of the moving plate. The same effect can be obtained by sticking to. In addition, for example, it is also easy to cope by pasting an electrode sheet on an existing moving plate.

  In the present invention, it is preferable that the electrode of the electrostatic chuck is provided on the surface of the moving plate along the flow path.

  With this configuration, an electrostatic chuck is provided along the flow path that flows through the inside of the moving plate, so that the electrostatic chuck can easily adjust to the cooling temperature. The cooling uniformity can be maintained and the cooling temperature can be easily transmitted to the substrate, so that the cooling within the moving time can be achieved.

  In the present invention, the electrostatic chuck is provided at least at a position along the periphery of the substrate to be placed, and has at least two ring-shaped outer circles and inner circles provided on the inner side in plan view. It is better to be composed of a plurality of circles (claim 6).

  With this configuration, even if the substrate is warped or concave, it is attracted by a circle from the center if it is concave, and if it is convex, it is attracted by an outer circle. Therefore, adsorption fixation can be achieved reliably.

  In the present invention, it is preferable that the electrostatic chuck composed of the two or more circles has different polarities of applied voltages.

  With such a configuration, it is possible to suppress the foreign matter existing in the atmosphere in the heat treatment apparatus from being attracted by the electrostatic chuck, and thus it is possible to suppress the adhesion of particles to the substrate.

  In the present invention, it is preferable that the voltage applied to the electrostatic chuck is applied only before and after the movement plate starts moving and just before the movement ends.

  With this configuration, if the substrate is attracted and fixed by an electrostatic chuck in order to suppress the inertial force of the substrate that is generated at the start of movement of the movable plate, the back surface of the substrate is not rubbed. Further, if the substrate is fixed in order to suppress the inertial force of the substrate that is generated when the moving plate stops at the end point of the movement, the same rubbing does not occur. Further, if the adsorption is canceled during the movement, the adhesion of the particles can be suppressed, so that the particles on the back surface of the substrate can be suppressed by a series of operations.

  In the present invention, it is preferable that the polarity of the voltage applied to the plurality of circles of the electrostatic chuck reverses the polarity applied to the heat treatment plate during loading and the polarity applied during unloading. (Claim 9).

  By comprising in this way, the adhesion of the particle | grains in the heat processing apparatus to an electrostatic chuck can be suppressed, and the adhesion of the particle to a substrate back surface can also be suppressed.

  As described above, the heat treatment apparatus of the present invention is configured as described above, and the moving speed of the cooling plate, which is a moving plate having a cooling function for loading and unloading the substrate from and to the heat treatment plate. The following effects can be obtained when an electrostatic chuck is used to increase the speed.

  By applying an electrostatic chuck function to the cooling plate, it is possible to hold the suction plate from before and after the start of movement of the cooling plate to the end of movement. This can be suppressed by adsorbing the substrate. Moreover, the substrate can be cooled more quickly by adsorbing the substrate. In this case, even if the substrate is warped, the in-plane cooling of the substrate can be made uniform by adsorbing it. The electrostatic chuck is formed into a printed electrode sheet shape separately from the substrate of the cooling plate, so that the printed electrode sheet can be attached to the cooling plate easily without being manufactured through complicated processes.

It is a top view of the resist processing apparatus to which the heat processing apparatus which concerns on this invention is applied. It is a perspective view of the said resist processing apparatus. It is a perspective view which shows the structure of the cooling plate group provided in the carrier block side which has the delivery function of a board | substrate. It is a perspective view which shows the structure of the cooling plate group provided in the interface side which has a delivery function of a board | substrate. It is a perspective view which shows the whole heat processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows the operation | movement aspect of a heat processing apparatus. It is a top view which shows the relationship between a heat processing apparatus and a conveyance arm. It is a perspective view which shows the relationship between the movement plate provided in a heat processing apparatus, and a conveyance arm. It is a perspective view which shows the cooling water flow path of the movement plate provided in a heat processing apparatus. It is a disassembled perspective view which shows the structure with which an electrostatic chuck is provided in a moving plate. It is a schematic perspective view which shows the structural example in which the electrostatic chuck was provided in the movement plate. It is a schematic perspective view which shows the structural example in which the electrostatic chuck was provided in the movement plate. 2 is a schematic cross-sectional view showing a relationship between a printed electrode sheet and a wafer W. FIG. It is a schematic perspective view which shows the example which used the electrostatic chuck for another cooling plate.

  First, the form of the coating and developing apparatus in which the heat treatment apparatus according to the present invention is incorporated will be described. A case where the present invention is applied to the coating and developing apparatus for the wafer W, which is the semiconductor substrate of FIGS. The coating and developing apparatus is provided with a carrier block S1, and the transfer arm C takes out the wafer W from the carrier 20, which is a hermetically sealed substrate storage container mounted on the mounting table 21, via the opening / closing part 22. The transfer block C is configured to receive the processed wafer W from the processing block S2 and return it to the carrier 20 from the processing block S2.

  As shown in FIG. 2, the processing block S2 is a first block (DEV layer) B1 and B2 of the development processing apparatus and an antireflection film formed on the lower layer side of the resist film in order to perform development processing in this example. A second block (BCT layer) B3 provided with a lower antireflection coating device for performing a forming process, a third block (COT layer) B4 provided with a resist coating processing device for applying a resist film, a resist film In order to form an antireflection film formed on the upper layer side, a fourth block (TCT layer) B5 of the upper antireflection film coating apparatus is laminated in order from the bottom.

  The resist coating and developing apparatus includes a first block (DEV layer) B1 and B2, a second block (BCT layer) B3 for performing an antireflection film forming process formed on the lower layer side of the resist film, Third block (COT layer) B4 for coating, fourth block (TCT layer) B5 for forming an antireflection film formed on the upper layer side of the resist film, liquid processing apparatus for applying a chemical solution (Not shown), a heat treatment apparatus 50 as a heating and cooling system processing unit according to the present invention for performing pre-processing and post-processing of processing performed in the liquid processing apparatus, and the liquid processing apparatus and processing For example, the COT layer B4 includes a transfer arm A4 that transfers the wafer W between them. Similarly, the DEV layers B1, B2, BCT layer B3, and TCT layer B5 have transfer arms A1 (DEV layer), A3 (BCT layer), and A5 (TCT layer).

  For example, taking the fourth block (COT layer) B4 as an example, as shown in FIG. 1, for each layer, for example, three cups for applying a resist are provided in the COT unit 31. Then, heating and cooling processing unit groups U1, U2, U3, U4 are arranged facing the straight conveyance path so as to sandwich the straight conveyance of the conveyance arm A4. The processing unit groups U1, U2, U3, U4 are each configured in two stages, and there are a total of eight processing units in the drawing of FIG.

  Further, the processing block S2 is provided with a shelf unit U5 as shown in FIGS. 1 and 3, and the wafer W from the carrier block S1 has three pins standing by the delivery arm C to be a delivery unit of the shelf unit U5. It is delivered to the transition stages TRS1 and TRS2 that are provided, and can be moved up and down provided in the vicinity of the shelf unit U5 in the corresponding cooling processing unit CPL2 (cooling plate) of the second block (BCT layer) B2. Are sequentially transferred by the transfer arm D. A shelf unit U6 is provided at a position adjacent to the interface block S3 on the opposite side of the processing block S2 from the carrier block S1. The shelf unit U6 is configured in the same manner as the shelf unit U5, and is configured so that the wafer W can be moved up and down by each transfer arm E.

  As shown in FIG. 3, the shelf unit U5 is arranged in two stages, the first cooling plates CPL1a, CPL1b, the transition stages TRS1, TRS2, the second cooling plates CPL2a, CPL2b, the third Cooling plates CPL3a and CPL3b and fourth cooling plates CPL4a and CPL4b are stacked in order from the bottom. Further, as shown in FIG. 4, the shelf unit U6 is configured in the same manner as the shelf unit U5. That is, the shelf unit U6 is formed by stacking two stages of cooling plates CPL5a, CPL5b to CPL8a, CPL8b corresponding to the first to fourth cooling plates CPL1a, CPL1b to CPL4a, CPL4b of the shelf unit U5 and the transition stages TRS3, TRS4. Configured.

  The transfer arm A3 in the second block (BCT layer) B2 receives the wafer W from the cooling processing units CPL2a and 2b of the shelf unit U5 and receives each unit (antireflection film unit and heating / cooling processing unit group). The antireflection film is formed on the wafer W by these units. Similarly, the wafer W processed in the BCT layer B2 is transferred to the cooling processing units CPL6a and CPL6b of the shelf unit U6 and transferred to the cooling processing units CPL7a and CPL7b corresponding to the COT layer B4 by the transfer arm E and COT. It is carried to each processing unit by the transfer arm A4 of the layer B4 and a resist coating process is performed.

  Thereafter, it is transported to the cooling processing units CPL3a and CPL3b, and the delivery arm D is received and delivered to the cooling processing units CPL4a and CPL4b in the same manner as described above, and the intended antireflection film processing is performed by the transport arm A5 of the TCT layer B5. . Thereafter, the wafer W is transferred to the cooling units CPL8a and CPL8b of the shelf unit U6, and the wafer W is transferred to the TRS3 and TRS4 by the transfer arm E. The wafer W is transferred to the exposure device S4 by the transfer arm F in the interface block S3. After the wafer W unloaded from the exposure machine S4 is received by the transfer arm F and transferred to the CPL 5a and CPL 5b configured so that the three pins for supporting the wafer W can be moved in and out, the development processing is performed on the DEV layer A1, Performed at A2. After that, it is delivered to and passed through the cooling processing units CPL1a and CPL1b, and the delivery arm C of the carrier block S1 is received and stored in the carrier 20.

  Next, for example, the heat treatment apparatus to which the present invention is applied will be described with reference to FIGS. 1 and 5 to 9. Heat treatment apparatuses 50 shown in FIGS. 5 and 7 are accommodated in the heating and cooling processing unit groups U1, U2, U3, and U4 shown in FIG. The heat treatment apparatus 50 includes a moving plate 51 for placing and cooling the wafer W, a heat treatment plate 52 for placing the wafer W and subjecting it to heat treatment, and a surface of the heat treatment plate 52 that can be moved in and out. Then, the wafer W can be transferred between the moving plate 51 and the heat treatment plate 52 by three pins 53 (hereinafter referred to as 3 pins; shown in phantom lines in FIG. 5) for supporting and holding the wafer W. . The moving plate 51 is provided with a slit 51b having one end opened corresponding to a position where the 3 pin 53 is avoided when the moving plate 51 enters the heat treatment plate 52. A proximity spacer 62 is provided on the wafer W mounting surface of the heat treatment plate 52 to provide a gap of, for example, 100 μm between the back surface of the wafer W. Further, as shown in FIG. 9, the moving plate 51 is provided with a cooling water flow path 63 for cooling the moving plate 51.

  Further, a lid 54, which is a chamber for substantially sealing, is provided above the heat treatment plate 52 (indicated by an imaginary line in FIG. 5). An exhaust pipe 56 for exhausting the inside of the chamber in a closed state is connected to the lid body 54, and the exhaust pipe 56 and the lid body 54 are configured to be movable up and down by a cylinder 57. Further, the 3 pin 53 is configured to be moved up and down by a cylinder 58.

  Next, a procedure for delivering the wafer W to the heat treatment plate 52 will be described with reference to FIGS. First, as shown in FIG. 6A, when the moving plate 51 is located at the moving end (home position), the wafer W is received by the transfer arm A4. At this time, as shown in FIG. 8, the relationship between the moving plate 51 and the transfer arm A4 is such that the four wafer W support pieces A4a provided on the transfer arm A4 correspond to the four side recesses 51a of the moving plate 51. It can pass up and down. At the time of delivery, the transfer arm A4 on which the wafer W is placed moves toward the moving plate 51 and moves downward from above so that the wafer W can be placed. The reverse procedure is performed when the wafer W is received from the moving plate 51.

  The moving plate 51 includes a linear motion guide 61 for moving between the heat treatment plate 52 and the bracket 69 for connecting the linear motion guide 61 and the movable plate 51 to move the moving plate 51 forward and backward. An actuator (not shown) is connected to the bracket 69 for moving forward and backward.

  Returning to the description of FIG. 5, after the moving plate 51 on which the wafer W is placed enters the heat treatment plate 52 with the 3 pins 53 being submerged, the 3 pins 53 protrude as shown in FIG. 6B. The wafer W on the moving plate 51 is separated and supported, and the moving plate 51 is moved backward in this state. After the moving plate 51 is retracted, as shown in FIG. 6C, the wafer W is placed on the heat treatment plate 52 by placing the 3 pins 53 in a sunk state. When the wafer W is placed, the lid 54 is lowered and the heat treatment process is started. When the wafer W is unloaded after a predetermined time has elapsed, the procedure is reversed.

  Next, the detail of the site | part to which this invention was applied is demonstrated. The base material of the moving plate 51 is made of, for example, a ceramic material such as aluminum nitride or silicon carbide. A metal electrode is provided on the surface side on which the wafer W is placed, and a voltage is applied thereto. The electrostatic chuck 60 is configured to generate positive / negative potentials with the wafer W and to attract and fix the wafer W to the movable plate 51 side by the Coulomb force acting between them. In this case, as shown in FIG. 10, an electrode 64 configured in a film shape is attached to the surface of the moving plate 51, and the attached electrode 64 is, for example, as shown in FIGS.

  In this case, the electrode 64 is made of, for example, a metal thin film, and a metal film is produced by a screen printing method on a polyimide resin film 70 (a portion surrounded by a broken line in FIG. 10). The electrode 64 provided on the resin film 70 is a printed electrode sheet 65 (see FIG. 13), and thereby the electrostatic chuck 60 is configured. The metal thin film may be a conductive material such as copper or silver, and the resin film may be an insulating film. The printed electrode sheet 65 is further covered with a protective film 70a made of, for example, a polyimide resin film to protect the metal thin film, and the electrode 64 is sandwiched between the substrate of the moving plate 51 and sealed (FIG. 13). reference).

  Since the printed electrode sheet 65 (electrostatic chuck 60) is configured in this way, it is only necessary to process and produce only the printed electrode sheet 65. Electrodes are embedded in a generally used plate base material. It can be configured more simply than the structure of the chuck. By doing so, since the metal electrode 64 is sandwiched between the protective films 70a, it is possible to prevent metal contamination of the wafer W. In addition, since the electrode 64 is formed in a sheet shape, the adsorption function can be applied by attaching the printed electrode sheet 65 and performing wiring. If it is no longer needed, it can be easily recovered by removing it. Furthermore, even if the electrostatic chuck 60 fails, the replacement can be easily restored by replacing the replacement, so that the time for stopping the apparatus can be shortened.

  The printed electrode sheet 65 (electrostatic chuck 60) is provided with a terminal portion for applying a voltage (not shown), and a wiring cable (not shown) wired so as to match the movement of the moving plate 51 is connected to the terminal. And the voltage application circuit unit 71 are connected. The voltage application circuit unit 71 uses a known bipolar system, and includes, for example, a power supply unit 66 for applying a minus and a power supply unit 67 for applying a plus. In addition, the power supply unit 66 and the power supply unit 67 have a reverse voltage relationship, and can be controlled and switched by the control unit 72 so that the polarity of application of the voltage to the electrode 64 can be switched. A switching unit 68 is provided. The control unit 72 controls the switching time period and switching timing in addition to the application time. FIG. 13 shows the potential state of the wafer W and the electrode 64 when the electrode 64 is applied when acting as an electrostatic chuck.

  As shown in FIGS. 11 and 12, the printed electrode sheet 65 (electrostatic chuck 60) is an appearance (plan view) provided along the periphery of the wafer W at a position where the wafer W is placed on the moving plate 51. ) Has a ring-shaped outer circle 64a and a ring-shaped inner circle 64b provided concentrically on the inner side of the ring-shaped outer circle 64b. The bipolar system shown in FIG. 11 is an electrostatic chuck in which the polarity of the potential is different between the moving plate halves. In the bipolar system shown in FIG. The polarities are different. By doing so, it is possible to suppress attracting particles charged to a certain potential to the moving plate surface. By making a circle, it becomes easy to cope with concave and convex warpage of the wafer W to be adsorbed.

  Next, the timing for applying the electrostatic chuck will be described with reference to FIG. First, the apparatus controller 100 permits the wafer W on the transfer arm A4 to be loaded into the heat treatment apparatus U1, and a voltage is applied to the electrostatic chuck immediately before or after the wafer W is placed on the moving plate 51. Adsorbed {see Fig. 6 (a)}. While holding the suction, the heat treatment plate 52 is entered and the voltage application is stopped simultaneously with the stop. In a state where the suction is released, the 3 pins 53 are projected to support the wafer W {see FIG. 6B}. At the time of unloading, the 3-pin 53 is submerged and a voltage is applied to the electrostatic chuck 60 immediately before or immediately after the wafer W is placed on the moving plate 51 for suction. With the electrostatic chuck 60 adsorbing the wafer W, the moving plate 51 moves out of the heat treatment plate 52 and moves to the loading / unloading position. After moving to the loading / unloading position, the application of voltage is canceled to stop the suction.

  In this case, the movement of the wafer W on the moving plate due to the inertia of the wafer W can be stopped only by operating the electrostatic chuck 60 before and after the start of movement and immediately before the movement is stopped. The back side of W is not rubbed. If the particles are not attracted during the movement, the charged particles on the wafer W can be prevented from being attracted. In addition, by switching and fixing the polarity of the voltage until the wafer is transferred to the heat treatment plate 52 and transferred to the heat treatment plate 52 and the polarity of the voltage until it is discharged after the heat treatment process, the charged particles of the wafer W are attracted in the same manner. Can be suppressed.

  An example in which the electrostatic chuck 60 according to the present invention is applied to another part is shown in FIG. FIG. 14 is a cooling plate provided in U5 and U6 of FIGS. 3 and 4 described above. As an example, FIG. 14 will be described using CPL 3a. The structure of the cooling plate CPL3a is similar in shape and material to the moving plate 51 of the heat treatment apparatus 50 described above, and can be used even if the printed electrode sheet 65 is attached thereto. By doing so, the adhesion with the cooling plate is improved, and the substrate can be uniformly and rapidly cooled.

  In the above embodiment, the case where the heat treatment apparatus 50 according to the present invention is applied to a semiconductor resist coating and developing apparatus system has been described. However, the heat treatment apparatus 50 according to the present invention is applied to an FPD substrate processing system and a cleaning apparatus. Of course, the above can also be applied.

50 heat treatment apparatus 51 moving plate 52 heat treatment plate 53 3 pin 54 lid A4 transfer arm 60 electrostatic chuck 62 proximity spacer 63 cooling water flow path 64 electrode 65 printed electrode sheet 66 power supply part 67 power supply part 68 switching part 70 polyimide electrode Sheet 70a Protective film 71 Voltage application circuit unit 72 Control unit

Claims (9)

A heat treatment apparatus for performing heat treatment on a liquid-treated substrate,
A heat treatment plate for placing the substrate on the plate and performing a heat treatment;
A moving plate configured to be able to move forward and backward to transfer and receive the substrate with respect to the heat treatment plate;
An electrostatic chuck that is provided on the surface side of the moving plate and sucks at least the substrate placed on the moving plate at the time of the forward and backward movement;
The heat processing apparatus characterized by comprising.   2. The heat treatment apparatus according to claim 1, wherein the moving plate includes a flow path for allowing cooling water to flow inside the moving plate in order to cool the placed substrate.   3. The electrostatic chuck is formed by attaching a film of an electrostatic chuck composed of a printed electrode sheet provided with an electrode on a resin film to a base material on the moving plate. Heat treatment equipment.   The heat treatment apparatus according to claim 3, wherein the electrode of the printed electrode sheet is configured to be sandwiched between a polyimide coating film and a base material of the moving plate.   The heat treatment apparatus according to claim 1, wherein an electrode of the electrostatic chuck is provided on a surface of the moving plate along a flow path of cooling water provided in the moving plate.   The electrostatic chuck is provided at a position along at least a peripheral edge of the substrate to be placed, and is configured by a plurality of circles including at least two or more ring-shaped outer circles and inner circles provided on the inner side in plan view. The heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is provided.   The heat treatment apparatus according to claim 6, wherein the electrostatic chuck composed of the two or more circles has different polarities of applied voltages.   The heat treatment apparatus according to claim 7, wherein the voltage is applied only before and after the movement plate starts moving and just before the movement ends.   The polarity of the voltage applied to the plurality of circles of the electrostatic chuck reverses the polarity applied to the heat treatment plate at the time of carry-in and the polarity applied at the time of carry-out. Heat treatment equipment.

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