JP3132817B2 - Processing method using focused ion beam - Google Patents
Processing method using focused ion beamInfo
- Publication number
- JP3132817B2 JP3132817B2 JP01301185A JP30118589A JP3132817B2 JP 3132817 B2 JP3132817 B2 JP 3132817B2 JP 01301185 A JP01301185 A JP 01301185A JP 30118589 A JP30118589 A JP 30118589A JP 3132817 B2 JP3132817 B2 JP 3132817B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- ion beam
- aperture
- processed
- variable multi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、集束イオンビーム装置により微細加工を施
す微細加工方法に関するものである。Description: TECHNICAL FIELD The present invention relates to a fine processing method for performing fine processing using a focused ion beam apparatus.
本発明は、イオンビーム電流を可変マルチアパーチャ
によって変えられる集束イオンビーム装置において、加
工しようとする領域の大きさに従って、可変マルチアパ
ーチャのアパーチャ径を選択及び設定し、これに伴い、
加工条件も選択及び設定させるようにしたものである。The present invention is a focused ion beam apparatus in which the ion beam current can be changed by the variable multi-aperture, and selects and sets the aperture diameter of the variable multi-aperture according to the size of the region to be processed,
The processing conditions are also selected and set.
従来、可変マルチアパーチャを備えた集束イオンビー
ム装置で微細加工する時、像観察においては、小さい穴
径のアパーチャで少ないイオンビーム電流にして、加工
しようとする領域を含む周辺の像を作り、加工しようと
する領域の大小に拘らず、像を作る時と同じイオンビー
ム電流か、あるいは加工用として定められた穴径のアパ
ーチャに切換えて加工を行っていた。Conventionally, when performing fine processing with a focused ion beam device equipped with a variable multi-aperture, in image observation, a small ion beam current is used with an aperture with a small hole diameter, and a peripheral image including the area to be processed is created and processed Irrespective of the size of the region to be processed, the processing is performed by switching to the same ion beam current as when forming an image, or to an aperture having a hole diameter determined for processing.
従来方法によると、加工しようとする領域の大小に拘
らず使用するイオンビーム電流が同じであるために、加
工しようとする領域の大小より最適なイオンビーム電流
が選べず、スループットが良くなかった。According to the conventional method, the ion beam current to be used is the same regardless of the size of the region to be processed. Therefore, an optimum ion beam current cannot be selected from the size of the region to be processed, and the throughput is not good.
本発明は、加工領域の大きさに応じて加工の目的、条
件等毎に最適アパーチャ径をコンピュータに記憶させて
おいたファイルから最適アパーチャ及び加工条件を選択
し、更に設定することにより、加工のスループットを向
上させることが出来た。According to the present invention, the optimal aperture and the processing conditions are selected from a file in which the optimum aperture diameter is stored in a computer for each of the processing objectives, conditions, and the like according to the size of the processing area, and further set, thereby performing the processing. Throughput could be improved.
本発明の実施例を第1図、第2図を用いて、以下に説
明する。第1図は、加工領域の認識から加工までの加工
方法の処理ステップをフローチャートに示す。可変マル
チアパーチャを含む集束イオンビーム加工装置を示す。
処理ステップST1の加工領域の認識では、加工する領域
を決定し、その大きさを求める。次に処理ステップST2
の加工モードの判定で、膜付加工を行うものであるなら
ば、処理ステップST3に移り、ガス銃制御系10によりガ
ス銃9を膜付加工状態にする。次に処理ステップST4に
移る。又、処理ステップST2の判定でエッチング加工を
行うものであるならば、直接に処理ステップST4に移
る。処理ステップST4においては、各加工モード(膜付
加工、エッチング加工)更に、加工要件としての加工精
度、加工しようとする材質の種類、加工の目的(配線、
観察の容易化等)毎に修正領域の大小に応じた最適アパ
ーチャ径をファイルの中から選び、最適アパーチャ径に
従い、可変マルチアパーチャ制御系5により可変マルチ
アパーチャを動かし、最適アパーチャを設定する。An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a flowchart showing processing steps of a processing method from recognition of a processing area to processing. 1 shows a focused ion beam processing apparatus including a variable multi-aperture.
In the recognition of the processing region in the processing step ST1, a region to be processed is determined and its size is obtained. Next, processing step ST2
If it is determined in the processing mode that the film forming processing is to be performed, the process proceeds to processing step ST3, and the gas gun control system 10 puts the gas gun 9 into the film forming processing state. Next, the process moves to processing step ST4. If it is determined in step ST2 that the etching process is to be performed, the process directly proceeds to processing step ST4. In processing step ST4, each processing mode (film forming processing, etching processing), processing accuracy as processing requirements, type of material to be processed, purpose of processing (wiring,
The optimum aperture diameter corresponding to the size of the correction area is selected from the file for each observation simplification, etc.), and the variable multi-aperture is moved by the variable multi-aperture control system 5 according to the optimum aperture diameter to set the optimum aperture.
次に、処理ステップST5に移り、前記ファイルから選
んだ設定条件及びアパーチャ径に対応した加工条件(ス
キャンスピード、加工時間、スキャンのピクセル間隔
等)を設定し、処理ステップST6の加工を始める。Next, the process proceeds to processing step ST5, in which processing conditions (scan speed, processing time, scan pixel interval, etc.) corresponding to the setting conditions and aperture diameter selected from the file are set, and the processing in processing step ST6 is started.
本発明により、最適アパーチャを選べるようにしたの
で最適なイオンビーム電流が選べ、かつ、最適アパーチ
ャに対応する加工条件を選べるようにしたので、加工し
ようとする領域の任意の大きさに対して、効率よく最適
加工が行われ、スループットが向上する。According to the present invention, since the optimal aperture can be selected, the optimal ion beam current can be selected, and the processing conditions corresponding to the optimal aperture can be selected, so that for an arbitrary size of the region to be processed, Optimal processing is performed efficiently and throughput is improved.
第1図は本発明の加工方法を示す加工方法のフローチャ
ートである。第2図は本発明の加工方法を実施するため
の全体構成図である。 1……イオン源 2……イオンビーム 3……レンズシステム 4……可変マルチアパーチャ 5……可変マルチアパーチャ制御系 6……コンピュータ 7……検出器 8……検出器制御系 9……ガス銃 10……ガス銃制御系 11……試料 12……ステージFIG. 1 is a flowchart of a processing method showing the processing method of the present invention. FIG. 2 is an overall configuration diagram for implementing the processing method of the present invention. DESCRIPTION OF SYMBOLS 1 ... Ion source 2 ... Ion beam 3 ... Lens system 4 ... Variable multi-aperture 5 ... Variable multi-aperture control system 6 ... Computer 7 ... Detector 8 ... Detector control system 9 ... Gas gun 10 ... Gas gun control system 11 ... Sample 12 ... Stage
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01J 37/30 H01J 37/09 ──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. 7 , DB name) H01J 37/30 H01J 37/09
Claims (1)
オンビームの電流を制限するアパーチャが複数用意さ
れ、該アパーチャを選択的に使用できる可変マルチアパ
ーチャと、該イオンビームを集束させるレンズ系と、該
イオンビームで加工しようとする試料を載せるステージ
と、該イオンビームを該試料上に照射する時に発生ずる
二次粒子を検出する検出器と、化合物ガスを吹き付ける
ガス銃と、該可変マルチアパーチャをコントロールした
り、該二次粒子に基づき該試料表面の像を作ったり、該
ガス銃からの該化合物ガスの吹き付けをコントロールす
るコンピュータより成る集束イオンビーム加工装置にお
いて、加工領域の大きさと共に膜付け加工かエッチング
加工かの加工モード、加工要件としての加工精度に対応
して、アパーチャ径及びその時の加工条件としてのスキ
ャンスピード、加工時間、スキャンのピクセル間隔を該
コンピュータに記憶させておき、該試料表面上の加工し
ようとする加工領域の大きさと共に加工モード、加工要
件に従って前記記憶した該可変マルチアパーチャのアパ
ーチャ径及びその時の加工条件を選択し、設定し、イオ
ンビームをスキャンし加工する事を特徴とする集束イオ
ンビームによる加工方法。An ion source for generating an ion beam, a plurality of apertures for limiting the current of the ion beam are provided, a variable multi-aperture capable of selectively using the aperture, and a lens system for focusing the ion beam. A stage for mounting a sample to be processed by the ion beam, a detector for detecting secondary particles generated when the ion beam is irradiated onto the sample, a gas gun for blowing a compound gas, and the variable multi-aperture. In a focused ion beam processing apparatus comprising a computer for controlling the size of the sample surface based on the secondary particles, controlling the spraying of the compound gas from the gas gun, Aperture diameter corresponding to the processing mode of attaching processing or etching processing and processing accuracy as processing requirements And the scanning speed, processing time, and scan pixel interval as processing conditions at that time were stored in the computer, and were stored in accordance with the processing mode and processing requirements together with the size of the processing area to be processed on the sample surface. A processing method using a focused ion beam, wherein an aperture diameter of the variable multi-aperture and processing conditions at that time are selected and set, and the ion beam is scanned and processed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01301185A JP3132817B2 (en) | 1989-11-20 | 1989-11-20 | Processing method using focused ion beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01301185A JP3132817B2 (en) | 1989-11-20 | 1989-11-20 | Processing method using focused ion beam |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03163741A JPH03163741A (en) | 1991-07-15 |
JP3132817B2 true JP3132817B2 (en) | 2001-02-05 |
Family
ID=17893798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP01301185A Expired - Lifetime JP3132817B2 (en) | 1989-11-20 | 1989-11-20 | Processing method using focused ion beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3132817B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3544438B2 (en) * | 1996-09-30 | 2004-07-21 | セイコーインスツルメンツ株式会社 | Processing equipment using ion beam |
JP4772344B2 (en) * | 2005-03-04 | 2011-09-14 | オリンパス株式会社 | Charged particle beam processing method and ultraprecision polishing method |
JP2006313704A (en) * | 2005-05-09 | 2006-11-16 | Jeol Ltd | Focusing ion beam apparatus |
-
1989
- 1989-11-20 JP JP01301185A patent/JP3132817B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH03163741A (en) | 1991-07-15 |
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