JPH08250059A - Ion beam working device - Google Patents

Abstract

PURPOSE: To reduce damage to a sample by additionally providing a mechanism of interpreting foreign matter information obtained in the other foreign matter inspection device, to decrease unnecessary beam scanning as small as possible. CONSTITUTION: A drawn out beam 6 controlled by an ion source controller 9 from an ion source 1 is collected by an electrostatic lens 6 controlled by a lens controller 10, to scan a fixed region on a target 4 held onto an XY stage 5 by a deflector 3 scanned by a scanning signal from a deflection controller 11. A secondary electron 7 generated from on the target 4 is detected by a detector 8, and a brightness modulated signal corresponding to the number of the secondary electrons 7 is displayed on a CRT 14 through an SIM image memory 12. On the other hand, a recording medium 17, recording the dimension and a position of foreign matter detected by the other foreign matter inspection device, is mounted in an external memory device 16, and foreign matter information is fetched by a central processor device 15, to display on the CRT 14 a pattern corresponding to a reference position belonging to foreign matter information on the recording medium 17.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam processing apparatus which facilitates setting of a processing position when an object having a fine processing pattern such as a mask is corrected by an ion beam.

[0002]

2. Description of the Related Art The prior art is based on the
International Reliability Physics Symposium, (1989) pp. 43-5
Page 2 (Proceedings of International Reliability Phys
ics Symposium, (1989) pp.43-52).

In the above-mentioned paper, in the apparatus configuration shown in FIG. 4, the beam 19 emitted from the ion source 18 is converged on the sample 25 by the electrostatic lenses 20 to 22 while being narrowed by the intermediate aperture 23, and the deflector 24 is used to converge the sample. The beam 19 is two-dimensionally scanned over a certain area on the sample 25, and secondary electrons generated from the sample 25 are detected by the detector 26 to detect the SIM (Scannin
g Ion Microscope) image.

Here, regarding the localization of the defect, while observing the defect area in the SIM image obtained by two-dimensionally scanning the fixed area on the sample 25 with the deflector 24, the sample is observed. Move by moving 25.

[0005]

According to the above-mentioned prior art, the present invention locates defects by using the beam 19 on the sample 25 by several hundred μ.
Since the sample 25 is moved while scanning at an angle of m, it is difficult to move the target defect to the position directly below the beam, and the sample 25 is unnecessarily damaged.

An object of the present invention is to provide an ion beam processing apparatus capable of easily locating a defect and minimizing damage to a sample.

[0007]

In order to achieve the above object, the present invention is provided with a mechanism for interpreting foreign substance information obtained by another foreign substance inspection device, and transforms the coordinate system with the above-mentioned foreign substance inspection device. The ion beam processing apparatus is characterized in that it is possible to easily position the object by pointing the foreign material of interest.

[0008]

With the above structure, it is possible to minimize unnecessary beam scanning and consequently to minimize damage to the sample.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

In FIG. 1, the beam 6 extracted from the ion source 1 under the control of the ion source controller 9 is concentrated by the electrostatic lens 2 under the control of the lens controller 10, and the scanning signal from the deflector controller 11 is used. Deflector 3 for scanning by
When the beam 6 is two-dimensionally scanned on a certain area on the target 4 held on the XY stage 5, the secondary electrons 7 generated from the target 4 are detected by the detector 8 and the number of the secondary electrons 7 is detected. The brightness modulation signal corresponding to is SIM
The image is displayed on the CRT 14 via the image memory 12 and becomes a scanning ion microscope image according to the same principle as a scanning electron microscope (SEM).
Further, in this figure, by mounting the recording medium 17 in which the position and size of the foreign matter detected by another foreign matter inspection device are recorded in the external storage device 16, the foreign matter information is stored in the central processing unit 15.
It is designed to be taken into. The XY stage 5 described above is controlled by the central processing unit 15 by the stage controller 13.

In the above structure, the pattern corresponding to the reference position attached to the foreign substance information in the recording medium 17 is formed on the CRT.
The XY stage 5 is moved so as to come to 14 above. Therefore, the position coordinate in the coordinate system in this configuration is calculated from the current position coordinate of the XY stage 5 and the positional relationship from the change center obtained on the CRT 14 to the pattern. By performing this operation at two points on the target 4, the offset and tilt angle of the coordinate system in the present configuration with respect to the coordinate system in the foreign substance information can be obtained, and it becomes possible to convert the position information of the foreign substance into the coordinate system of the present configuration. . Then, the foreign matter information is sent to the central processing unit 1
5, and the image and list as shown in FIG. 2 are displayed on the CRT 14. The foreign matter is indicated by points in the diagram of FIG. 2, and by selecting any foreign matter, the central processing unit 15 converts the coordinate system into the coordinate system of this configuration, and then the stage controller 13 moves the XY stage 5 to the target foreign matter position. .

In FIG. 2, by adding an item for designating the range of the size of the foreign matter, only the foreign matter that matches the designation is displayed on the image and the list, and only the selected foreign matter is displayed with X.
The Y stage 5 can be moved.

When the XY stage 5 at the foreign matter position designated on the screen of FIG. 2 is moved to scan the target 4 with the beam 6 to search for foreign matter, a 16 μm square area within the 128 μm square deflectable area is searched. As shown in FIG. 3, by scanning the beam 6 so as to overlap by 3 μm and switching the display on the CRT 14, it becomes possible to easily search for a foreign substance.

[0014]

As described above, according to the present invention, it is possible to easily position a foreign substance, and as a result, to reduce unnecessary beam scanning as much as possible, thereby minimizing damage to the sample.

[Brief description of drawings]

FIG. 1 is a block diagram of an ion beam processing apparatus showing an embodiment of the present invention.

FIG. 2 is a front view of an operation screen used in the present invention.

FIG. 3 is an explanatory diagram when performing a search according to the present invention.

FIG. 4 is an assembly view of a conventional ion beam processing apparatus.

[Explanation of symbols]

1 ... Ion source, 2 ... Electrostatic lens, 3 ... Deflector, 4 ...
Target, 5 ... XY stage, 6 ... Beam, 7 ... Secondary electron, 8 ... Detector, 9 ... Ion source controller, 1
0 ... Lens controller, 11 ... Deflector controller, 12 ... SIM image memory, 13 ... Stage controller, 14 ... CRT, 15 ... Central processing unit, 16 ... External storage unit, 17 ... Recording medium.

Claims (3)

[Claims] 1. An ion beam irradiation mechanism for focusing and irradiating an ion beam extracted from an ion source onto a target installed on a moving mechanism, and two-dimensionally scanning the irradiation position, and the irradiation of the ion beam. Detecting secondary particles generated from the target, in an ion beam processing apparatus consisting of a secondary particle detection mechanism that forms a secondary particle image by the detection signal, foreign matter in the target with other foreign matter detection device An ion beam processing apparatus having a mechanism for interpreting detected foreign matter information. 2. The ion beam processing apparatus according to claim 1, wherein by defining the range of the size of the foreign matter, only the foreign matter that meets the conditions is selectively moved directly below the ion beam. 3. The ion beam processing apparatus according to claim 1, wherein the vicinity of a designated position of the foreign matter can be searched by scanning the ion beam.