JP3130940B2 - 電気化学法 - Google Patents

電気化学法

Info

Publication number
JP3130940B2
JP3130940B2 JP05507532A JP50753293A JP3130940B2 JP 3130940 B2 JP3130940 B2 JP 3130940B2 JP 05507532 A JP05507532 A JP 05507532A JP 50753293 A JP50753293 A JP 50753293A JP 3130940 B2 JP3130940 B2 JP 3130940B2
Authority
JP
Japan
Prior art keywords
anode
anolyte
cathode
catholyte
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05507532A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07502303A (ja
Inventor
バーカー，ジェレミー
ジョン マーシャル，ロドニー
サデイ，メーラン
Original Assignee
ビーピー ソーラー リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ビーピー ソーラー リミテッド filed Critical ビーピー ソーラー リミテッド
Publication of JPH07502303A publication Critical patent/JPH07502303A/ja
Application granted granted Critical
Publication of JP3130940B2 publication Critical patent/JP3130940B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P14/3432—
    • H10P10/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10P14/265—
    • H10P14/2922—
    • H10P14/3228—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/915—Electrolytic deposition of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Battery Electrode And Active Subsutance (AREA)
JP05507532A 1991-10-18 1992-10-15 電気化学法 Expired - Fee Related JP3130940B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9122169.7 1991-10-18
GB919122169A GB9122169D0 (en) 1991-10-18 1991-10-18 Electrochemical process
PCT/GB1992/001888 WO1993008594A1 (en) 1991-10-18 1992-10-15 Electrochemical process

Publications (2)

Publication Number Publication Date
JPH07502303A JPH07502303A (ja) 1995-03-09
JP3130940B2 true JP3130940B2 (ja) 2001-01-31

Family

ID=10703174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05507532A Expired - Fee Related JP3130940B2 (ja) 1991-10-18 1992-10-15 電気化学法

Country Status (12)

Country Link
US (1) US5478445A (member.php)
EP (1) EP0538041A1 (member.php)
JP (1) JP3130940B2 (member.php)
KR (1) KR100268822B1 (member.php)
CN (1) CN1092718C (member.php)
AU (1) AU672761B2 (member.php)
GB (1) GB9122169D0 (member.php)
IN (1) IN186800B (member.php)
MY (1) MY109064A (member.php)
TW (1) TW232716B (member.php)
WO (1) WO1993008594A1 (member.php)
ZA (1) ZA928025B (member.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI593841B (zh) * 2015-03-27 2017-08-01 黃思倫 電化學法萃取植物纖維之萃取方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968364A (en) * 1993-03-16 1999-10-19 Henkel Corporation Process for the removal of toxic cyanide and heavy metal species from alkaline solutions
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US8236159B2 (en) 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US6638239B1 (en) 2000-04-14 2003-10-28 Glaukos Corporation Apparatus and method for treating glaucoma
WO2002091483A2 (en) 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
US20050146875A1 (en) * 2004-01-07 2005-07-07 Tideland Signal Corporation Side-emitting led marine signaling device
CN101065520A (zh) * 2004-11-30 2007-10-31 纳幕尔杜邦公司 导电表面的膜限制性选择电镀
WO2012096850A2 (en) * 2011-01-10 2012-07-19 EncoreSolar, Inc. Method and apparatus for electrodeposition of group iib-via compound layers
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
CN106868563B (zh) * 2015-12-11 2019-01-25 中国海洋大学 一种硒化物薄膜修饰泡沫镍电极的制备方法及其应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
US4192721A (en) * 1979-04-24 1980-03-11 Baranski Andrzej S Method for producing a smooth coherent film of a metal chalconide
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
JPS60140406A (ja) * 1983-12-28 1985-07-25 Mitsubishi Heavy Ind Ltd 船舶誘導装置
US4536260A (en) * 1984-05-14 1985-08-20 University Of Guelph Thin film cadmium selenide electrodeposited from selenosulphite solution
IN167516B (member.php) * 1986-05-06 1990-11-10 Standard Oil Co Ohio
JP2509635B2 (ja) * 1987-09-21 1996-06-26 財団法人相模中央化学研究所 金属カルコゲナイド粒子分散膜の製造方法
GB9022828D0 (en) * 1990-10-19 1990-12-05 Bp Solar Ltd Electrochemical process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI593841B (zh) * 2015-03-27 2017-08-01 黃思倫 電化學法萃取植物纖維之萃取方法

Also Published As

Publication number Publication date
ZA928025B (en) 1994-04-18
CN1092718C (zh) 2002-10-16
TW232716B (member.php) 1994-10-21
MY109064A (en) 1996-11-30
AU672761B2 (en) 1996-10-17
US5478445A (en) 1995-12-26
IN186800B (member.php) 2001-11-10
KR100268822B1 (ko) 2000-10-16
CN1071977A (zh) 1993-05-12
WO1993008594A1 (en) 1993-04-29
JPH07502303A (ja) 1995-03-09
AU2756092A (en) 1993-05-21
EP0538041A1 (en) 1993-04-21
KR940703077A (ko) 1994-09-17
GB9122169D0 (en) 1991-11-27

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Legal Events

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