JP3125838B2 - Method for manufacturing two-layer flexible substrate - Google Patents

Method for manufacturing two-layer flexible substrate

Info

Publication number
JP3125838B2
JP3125838B2 JP06336511A JP33651194A JP3125838B2 JP 3125838 B2 JP3125838 B2 JP 3125838B2 JP 06336511 A JP06336511 A JP 06336511A JP 33651194 A JP33651194 A JP 33651194A JP 3125838 B2 JP3125838 B2 JP 3125838B2
Authority
JP
Japan
Prior art keywords
layer
copper
film
substrate
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06336511A
Other languages
Japanese (ja)
Other versions
JPH08181402A (en
Inventor
毅彦 櫻田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP06336511A priority Critical patent/JP3125838B2/en
Publication of JPH08181402A publication Critical patent/JPH08181402A/en
Application granted granted Critical
Publication of JP3125838B2 publication Critical patent/JP3125838B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は2層フレキシブル基板の
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a two-layer flexible substrate.

【0002】[0002]

【従来の技術】フレキシブル配線板用の基板は、絶縁体
フィルムに接着剤を用いて銅箔を貼り合わせ、サブトラ
クティブ法によって所望の配線パターンを形成する3層
フレキシブル基板と、絶縁体フィルム上に直接下地金属
層を設けた基板に導体金属層を形成した後サブトラクテ
ィブ法またはアディティブ法によって所望の配線パター
ンを形成する2層フレキシブル基板とに大別される。
2. Description of the Related Art A substrate for a flexible wiring board is composed of a three-layer flexible substrate in which a desired wiring pattern is formed by a subtractive method by bonding a copper foil to an insulating film by using an adhesive, and a substrate on the insulating film. After a conductor metal layer is formed on a substrate directly provided with a base metal layer, it is roughly classified into a two-layer flexible substrate in which a desired wiring pattern is formed by a subtractive method or an additive method.

【0003】そして現在においては、製造工程が簡単
で、低コストで製造できる3層フレキシブル配線基板が
一般的である。しかしながら、近年電子機器の高密度化
にともなってフレキシブル配線板においても狭ピッチの
配線幅が要求されている。
[0003] At present, a three-layer flexible wiring board, which has a simple manufacturing process and can be manufactured at low cost, is generally used. However, in recent years, with the increase in the density of electronic devices, a narrow wiring width is also required for a flexible wiring board.

【0004】しかし3層フレキシブル配線板の場合に
は、エッチングによる配線部の形成に際してサイドエッ
チングを生ずるために配線断面の形状が裾広がりの台形
となることから、配線間の電気的絶縁性を確保するまで
エッチングを行うと配線ピッチが広くなりすぎてしま
い、従って配線幅の狭ピッチ化には限界があった。
However, in the case of a three-layer flexible wiring board, side insulation is generated when a wiring portion is formed by etching, so that the cross section of the wiring has a trapezoidal shape with a wide skirt, so that electrical insulation between the wirings is ensured. If the etching is performed until the wiring width becomes too large, the wiring pitch becomes too wide, so that there is a limit to the narrowing of the wiring width.

【0005】サイドエッチングによる裾広がりは銅の厚
みが厚い程、広がりが大きくなるので、広がりを小さく
して配線幅をより狭ピッチ化するためには、従来一般的
に使用される35μm厚さの銅箔に換えて18μm以下
の可及的に薄い銅箔を用いる必要があった。しかし薄肉
の銅箔、殊に数μm程度の極薄肉の銅箔は、それ自体の
剛性が小さいために搬送などのハンドリング性が悪く、
アルミニウムキャリアを貼り合わせて剛性を高くしなけ
ればならないという問題があった。また膜厚のばらつき
やピンホールや亀裂などの被膜欠陥を生じやすいと言う
欠点もあった。従って銅箔の厚さが薄くなればなる程配
線板の製造が困難になるし、また製造コストも高くなる
ので、3層フレキシブル配線板の長所であるコストメリ
ットがなくなってしまう。
Since the skirt spread due to side etching increases as the thickness of copper increases, the spread is reduced and the wiring width is reduced to a narrower pitch. It was necessary to use a copper foil as thin as 18 μm or less in place of the copper foil. However, thin copper foil, especially ultra-thin copper foil of about several μm, is poor in handling properties such as transport because of its low rigidity.
There was a problem that the rigidity had to be increased by bonding an aluminum carrier. There is also a disadvantage that film defects such as variations in film thickness and pinholes and cracks are likely to occur. Therefore, as the thickness of the copper foil becomes thinner, the production of the wiring board becomes more difficult and the production cost becomes higher, so that the advantage of cost, which is an advantage of the three-layer flexible wiring board, is lost.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、最近に
至り銅導体層の厚さが10μm以下、数μm程度でなく
ては製造できないような狭ピッチ配線幅のフレキシブル
配線板の要求が高くなってきた。そこで最近では2層フ
レキシブル配線板が注目されている。何となれば該2層
フレキシブル配線板は接着剤を施すことなく直接絶縁体
フィルム上に銅被膜層を形成するので基板を薄くできる
上に基板上に形成する銅被膜層も任意の厚さに形成させ
ることができるのでコストを下げることができるからで
ある。
However, recently, there has been an increasing demand for a flexible wiring board having a narrow pitch wiring width that cannot be manufactured unless the thickness of the copper conductor layer is less than 10 μm and about several μm. . Therefore, recently, a two-layer flexible wiring board has attracted attention. What is necessary is that this two-layer flexible wiring board forms a copper coating layer directly on an insulator film without applying an adhesive, so that the substrate can be made thinner and the copper coating layer formed on the substrate can also be formed to an arbitrary thickness This is because the cost can be reduced.

【0007】この2層フレキシブル基板は、絶縁体フィ
ルム上に乾式または湿式めっきで極めて薄い銅被膜を形
成させるものであるが、市場に流通しているものは殆ど
が乾式めっきを施したものである。
This two-layer flexible substrate has an extremely thin copper film formed on an insulating film by dry or wet plating, but most of those on the market are those subjected to dry plating. .

【0008】この乾式めっきを施した2層フレキシブル
基板においては、絶縁体フィルムと銅被膜との密着性が
悪いことから、一般に絶縁体フィルム上にクロム、酸化
クロム、ニッケルなどの銅以外の金属または金属酸化物
を下地層として50〜200オングストローム程度の厚
さに被着させた後に薄い銅被膜を形成させることによっ
て銅と絶縁体フィルムとの間の密着性を高めることが行
われている。
In the dry-plated two-layer flexible substrate, since the adhesion between the insulator film and the copper film is poor, a metal other than copper, such as chromium, chromium oxide, nickel or the like, is generally formed on the insulator film. It has been practiced to increase the adhesion between copper and an insulator film by forming a thin copper film after applying a metal oxide as a base layer to a thickness of about 50 to 200 angstroms.

【0009】そして通常この下地金属層に形成させる銅
被膜の厚さは、通常0.2〜0.5μm程度であるが、
このようにして形成される薄膜の銅被膜には多数のピン
ホールが生成しやすく、しばしば下地金属層や絶縁体フ
ィルムが露出している場合がある。また下地金属層は前
述したように50〜200オングストロームの厚さしか
ないので、基板に電気銅めっきを行うに際し、硫酸銅な
どの強酸性の電気めっき液に浸漬して通電した場合に溶
解され、絶縁体フィルムが露出してしまうという問題も
あった。従来は、配線部の形成に必要な銅による導電層
被膜の厚みは15〜35μmとされており、このような
かなりの厚さの銅被膜を電気銅めっき法で得る場合に
は、銅被膜は基板に対して垂直方向のみならず水平方向
にも成長するのでピンホールは該被膜によって埋まり、
ピンホールの存在による配線部の欠陥は生じないが、本
発明の目的とするような狭ピッチの配線を得ようとする
場合には、配線部形成のための銅被膜の厚みは10μm
以下、例えば5μm前後と、上記の厚みよりもかなり薄
くしなければならないために、電気銅めっき法により被
膜を形成した場合に被膜の水平方向への成長が足りずピ
ンホールを埋めることができないので配線部の欠陥等の
問題を起こしやすいという問題がある。
Usually, the thickness of the copper film formed on the base metal layer is usually about 0.2 to 0.5 μm.
A large number of pinholes are likely to be formed in the thin copper film formed in this way, and the underlying metal layer and the insulating film are often exposed. In addition, since the base metal layer has a thickness of only 50 to 200 angstroms as described above, when the substrate is subjected to electrolytic copper plating, it is dissolved when immersed in a strongly acidic electroplating solution such as copper sulfate and energized, There is also a problem that the insulating film is exposed. Conventionally, the thickness of the conductive layer film made of copper necessary for forming the wiring portion is 15 to 35 μm. When such a considerably thick copper film is obtained by the electrolytic copper plating method, the copper film is Since the pinhole grows not only in the vertical direction but also in the horizontal direction with respect to the substrate, the pinhole is filled with the coating,
No defect in the wiring portion is caused by the presence of the pinhole. However, in order to obtain a wiring having a narrow pitch as the object of the present invention, the thickness of the copper film for forming the wiring portion is 10 μm.
In the following, for example, the thickness must be about 5 μm, which is considerably thinner than the above-mentioned thickness. Therefore, when the film is formed by the electrolytic copper plating method, the growth of the film in the horizontal direction is insufficient and the pinhole cannot be filled. There is a problem that a problem such as a defect in the wiring portion is likely to occur.

【0010】例えば、サブトラクティブ法によって配線
形成を行うには、(1)絶縁体基板上に所望の厚さの銅
導体被膜を形成し、(2)該銅被膜上に配線部のみがマ
スキングされ、それ以外の部分における銅被膜が露出す
るように所望の配線パターンを有するレジスト層を設
け、(3)露出している銅被膜をエッチング処理によっ
て除去し、(4)最後にレジスト層を除去することによ
って行われる。従って、前述したように薄い銅被膜の場
合には、ピンホールが配線部にかかっていれば、配線部
はピンホールの位置で欠けることになり配線欠陥となる
ばかりか配線の密着不良を招く原因となりやすい。
For example, to form a wiring by a subtractive method, (1) a copper conductor film having a desired thickness is formed on an insulating substrate, and (2) only a wiring portion is masked on the copper film. Providing a resist layer having a desired wiring pattern so that the copper film in other portions is exposed, (3) removing the exposed copper film by etching, and (4) finally removing the resist layer This is done by: Therefore, as described above, in the case of a thin copper film, if a pinhole is formed on a wiring portion, the wiring portion is chipped at the position of the pinhole, which causes not only a wiring defect but also a poor adhesion of the wiring. It is easy to be.

【0011】本発明は、上記の問題に鑑みてなされたも
のであって、5μm前後の極めて薄い厚さの銅導体被膜
を形成した場合においてもピンホールによる欠陥が発生
しないような2層フレキシブル基板の製造方法を提供す
ることを目的とするものである。
The present invention has been made in view of the above problems, and has been made in consideration of the above-mentioned problems, and is intended to provide a two-layer flexible substrate which does not cause defects due to pinholes even when a copper conductor film having a very small thickness of about 5 μm is formed. It is an object of the present invention to provide a production method of

【0012】[0012]

【課題を解決するための手段】本発明者は、該絶縁体フ
ィルム上に下地金属層のニッケル被膜と表面金属層であ
る薄膜の銅被膜を乾式めっき法等により形成した基板上
に、銅の無電解めっきを施し、さらにその上に電気銅め
っき法で銅導体層を形成することによって絶縁体フィル
ムまたは下地金属が露出しているピンホールを減少させ
ることができることを見出して本発明を完成した。
Means for Solving the Problems The present inventor has proposed a method in which a nickel film of a base metal layer and a copper film of a thin film as a surface metal layer are formed on the insulating film by a dry plating method or the like. The present invention was completed by finding that it is possible to reduce the number of pinholes exposing the insulating film or the underlying metal by performing electroless plating and further forming a copper conductor layer thereon by an electrolytic copper plating method. .

【0013】すなわち上記の課題を解決するための本発
明は、絶縁体フィルムの片面または両面に接着剤を介さ
ずに直接にニッケル層を下地金属層として形成し、さら
に該下地金属層上に薄膜の銅層を形成した基板の該ニッ
ケル層または銅層上にさらに銅の導体層を形成した後、
サブトラクティブ法またはセミアディティブ法によって
プリント配線板を製造する方法において、該下地金属層
および薄膜の銅層を形成した後の基板を、無機アルカリ
溶液および/または有機アルカリ溶液で処理した後、該
基板表面に無電解銅めっき被膜を0.01μm以上の厚
さに形成し、さらに該無電解銅めっき被膜上に銅の導体
層を形成することを特徴とする2層フレキシブル基板の
製造方法である。
That is, the present invention for solving the above-mentioned problems is to form a nickel layer as a base metal layer directly on one or both sides of an insulating film without using an adhesive, and to further form a thin film on the base metal layer. After further forming a copper conductor layer on the nickel layer or copper layer of the substrate on which the copper layer is formed,
In a method for manufacturing a printed wiring board by a subtractive method or a semi-additive method, the substrate after forming the base metal layer and the copper layer of the thin film is treated with an inorganic alkali solution and / or an organic alkali solution. A method for manufacturing a two-layer flexible substrate, comprising: forming an electroless copper plating film on a surface to a thickness of 0.01 μm or more, and further forming a copper conductor layer on the electroless copper plating film.

【0014】本発明の方法をさらに具体的に説明する
と、ピンホール部分において露出する絶縁体フィルム表
面を例えばヒドラジンおよびエチレンジアミンの混合液
のような有機アルカリ溶液または水酸化カリウム、水酸
化ナトリウムのような無機アルカリ溶液、またはこれら
の混合溶液によって処理して親水化し、次に基板全体に
公知の無電解めっきのための触媒付与を行うことによっ
て、該親水化されている絶縁体フィルム表面とピンホー
ル部分に露出しているニッケル被膜上に触媒を付与し、
次いで無電解めっき法によって銅被膜を形成することで
導体層の厚みを増加させる。このようにすることにより
次工程での電気銅めっき処理に際しての強酸性めっき液
下での通電に際しても銅被膜が溶解することなく容易に
5μm程度の薄膜の健全な電気銅めっき被膜が得られ
る。
The method of the present invention will be described in more detail. The surface of the insulator film exposed at the pinhole portion is treated with an organic alkali solution such as a mixture of hydrazine and ethylenediamine or a potassium hydroxide or sodium hydroxide solution. By treating with an inorganic alkali solution or a mixed solution thereof to make it hydrophilic, and then applying a known catalyst for electroless plating to the entire substrate, the surface of the insulator film that has been made hydrophilic and the pinhole portion Applying a catalyst on the nickel coating exposed to the
Next, a copper film is formed by an electroless plating method to increase the thickness of the conductor layer. This makes it possible to easily obtain a sound copper plating film having a thickness of about 5 μm without dissolving the copper film even when current is applied under a strongly acidic plating solution in the subsequent copper plating treatment in the next step.

【0015】使用される触媒付与溶液は、酸性のパラジ
ウム−錫コロイド溶液や、アルカリ性のパラジウム錯体
溶液。または錫を含まない酸性パラジウム溶液など一般
的なものでよい。また触媒付与法も一般的な方法でよい
が、無電解めっき法の前処理として通常行われているセ
ンシタイジング・アクチベーション法や、キャタリスツ
・アクセレーター法などが簡便であり好ましい方法であ
る。
The catalyst-providing solution used is an acidic palladium-tin colloid solution or an alkaline palladium complex solution. Or a general one such as an acidic palladium solution containing no tin may be used. The catalyst may be applied by a general method, but a sensitizing activation method or a catalyst accelerator method, which is usually performed as a pretreatment of the electroless plating method, is a simple and preferable method.

【0016】また触媒付与に際しての前処理は、特に限
定されるものでないが乾式めっき被膜と湿式めっき被膜
との密着性を図るために脱脂等の処理を手利き行うこと
が好ましい。しかしながら、前処理によってニッケル被
膜や銅被膜が溶解するような条件は避けることが肝要で
ある。
The pretreatment at the time of applying the catalyst is not particularly limited. However, it is preferable to perform a treatment such as degreasing in order to ensure the adhesion between the dry plating film and the wet plating film. However, it is important to avoid conditions where the nickel film and the copper film are dissolved by the pretreatment.

【0017】なお、本発明において基板の親水化処理を
行うに際してのアルカリ溶液の濃度や処理温度等の処理
条件は、使用されるアルカリ溶液の種類などによって異
なるので、処理に際してはあらかじめ使用アルカリの種
類等応じて実験的に定めておく必要がある。
In the present invention, the processing conditions such as the concentration of the alkaline solution and the processing temperature for performing the hydrophilic treatment of the substrate differ depending on the kind of the alkaline solution to be used. It is necessary to determine experimentally according to the above.

【0018】[0018]

【作用】次に本発明の詳細およびその作用についてより
具体的に説明する。
Next, the details of the present invention and the operation thereof will be described more specifically.

【0019】ポリイミドフィルムなどの絶縁体フィルム
上に例えば100オングストローム程度の極薄膜のニッ
ケル被膜を乾式めっき法により形成し、さらにその上に
例えば0.3μm程度の薄膜の銅被膜をこれも乾式めっ
き法により形成した基板の表面をヒドラジンとエチルジ
アミン混合溶液のような有機アルカリ溶液、または水酸
化カリウム、水酸化ナトリウムのような無機アルカリ溶
液、あるいはヒドラジンと水酸化カリウムの混合液のよ
うな有機アルカリと無機アルカリの混合溶液によって処
理することにより、ピンホール部分で露出している絶縁
体フィルムの表面は親水化される。次いで無電解めっき
法で行われている触媒付与を行えば、親水化された絶縁
体フィルム上とピンホール部分において露出している該
ニッケル被膜上と最表面の銅被膜上に触媒が付与され
る。そして、このように触媒を付与した基板を所定の条
件で例えば無電解銅めっき液に浸漬すれば、触媒が増や
された部分、すなわち親水化された絶縁体フィルム表面
とニッケル被膜上と銅被膜上とに新たに無電解銅めっき
被膜が形成される。
An extremely thin nickel film of, for example, about 100 angstroms is formed on an insulating film such as a polyimide film by dry plating, and a thin copper film of, for example, about 0.3 μm is further formed thereon by dry plating. The surface of the substrate formed by an organic alkali solution such as hydrazine and ethyldiamine mixed solution, or an inorganic alkali solution such as potassium hydroxide and sodium hydroxide, or an organic alkali such as a mixed solution of hydrazine and potassium hydroxide. By performing the treatment with the mixed solution of the inorganic alkali, the surface of the insulating film exposed at the pinhole portion is hydrophilized. Next, if the catalyst application performed by the electroless plating method is performed, the catalyst is applied on the insulating film that has been hydrophilized, on the nickel film exposed in the pinhole portion, and on the uppermost copper film. . Then, when the substrate provided with the catalyst is immersed in, for example, an electroless copper plating solution under predetermined conditions, the portion where the catalyst is increased, that is, the surface of the insulator film, the surface of the nickel film, and the surface of the copper film which are hydrophilized At this time, a new electroless copper plating film is formed.

【0020】すなわち、親水化した絶縁体フィルム表面
とニッケル被膜上に新たに銅被膜を形成することで両者
の表面の導電性を高め、また金属層の厚みを増加させる
ことで硫酸銅めっき液を用いた電気銅めっきを行った場
合においても絶縁体フィルムの露出部やニッケル被膜部
分の溶解を起こすことがなくなる。したがってピンホー
ルを埋めることができるのである。電気銅めっき法によ
って5μm〜10μm程度の厚さの銅導体層を形成した
後、従来法によって該銅導体層上に所望の配線パターン
を有するレジスト層を形成し、銅導体層の露出部分をエ
ッチングにより除去し、その後該レジスト層を剥離除去
すれば配線の欠陥部や断線などの欠陥のない導体厚さ5
μm程度の2層フレキシブル配線板が得られる。本発明
の触媒付与法に用いる触媒活性金属としては、無電解め
っき液において添加される錯体化された金属イオン種よ
りも電位的に貴なものであればよい。例えば、金、白
金、銀、パラジウムなどが使用できる。しかし、簡便さ
を考慮すれば、触媒付与液として広く市販されているパ
ラジウム系のものを使用することが好ましい。
That is, by newly forming a copper film on the surface of the insulator film and the nickel film which have been made hydrophilic, the conductivity of both surfaces is increased, and by increasing the thickness of the metal layer, the copper sulfate plating solution is formed. Even when the used electrolytic copper plating is performed, the exposed portion of the insulator film and the nickel coating portion do not dissolve. Therefore, the pinhole can be filled. After forming a copper conductor layer having a thickness of about 5 μm to 10 μm by an electrolytic copper plating method, a resist layer having a desired wiring pattern is formed on the copper conductor layer by a conventional method, and an exposed portion of the copper conductor layer is etched. And then the resist layer is peeled off to remove the conductor thickness 5 without defect such as a defective portion of the wiring or disconnection.
A two-layer flexible wiring board of about μm is obtained. The catalytically active metal used in the catalyst application method of the present invention may be any metal that is more noble in potential than the complexed metal ion species added in the electroless plating solution. For example, gold, platinum, silver, palladium and the like can be used. However, considering simplicity, it is preferable to use a widely available palladium-based catalyst-imparting liquid.

【0021】本発明において使用される無電解めっき液
の種類としては、触媒として触媒活性金属種を用いてい
るので、めっき液に含まれる金属イオンの種類が金、
銀、白金、パラジウム、銅、ニッケル、コバルト、クロ
ムなどの自己触媒性を有するもので、かつヒドラジン、
ホスフィン酸ナトリウム、ホルマリンなどの還元剤によ
り還元されて金属析出する還元析出型のものが適当であ
る。しかしながら、本発明はピンホール部で露出してい
る絶縁体フィルム上を導電性に改修することと、薄い下
地ニッケル層が電気めっき時に溶解しないようにするこ
とが主たる目的であるので、導電性が良好で比較的作業
性のよい無電解銅めっき液が最も適しているといえる。
この無電解銅めっき被膜の厚さは、電気銅めっきを施す
際に、めっき液によって溶解されない程度の厚さ、例え
ば0.01μm以上の厚さであればよい。
As the type of electroless plating solution used in the present invention, since a catalytically active metal species is used as a catalyst, the type of metal ions contained in the plating solution is gold,
Silver, platinum, palladium, copper, nickel, cobalt, chromium, etc. with autocatalytic properties, and hydrazine,
A reduction-precipitation type in which metal is deposited by being reduced by a reducing agent such as sodium phosphinate or formalin is suitable. However, the present invention mainly aims to repair the insulating film exposed at the pinhole portion to be conductive and to prevent the thin underlying nickel layer from being dissolved during electroplating. It can be said that an electroless copper plating solution having good and relatively good workability is most suitable.
The thickness of the electroless copper plating film may be a thickness that is not dissolved by the plating solution when performing the electrolytic copper plating, for example, a thickness of 0.01 μm or more.

【0022】[0022]

【実施例】次に本発明の実施例について述べる。 実施例1 厚さ50μmのポリイミドフィルム(東レ・デュポン社
製、「カプトン200V」)を12cm×12cmの大
きさに切り出し、その片面に真空蒸着法によってニッケ
ルを100オングストロームの厚さに被着させ、さらに
その上に真空蒸着法によって銅を0.25μmの厚さに
被着させた基板を作成した。
Next, an embodiment of the present invention will be described. Example 1 A polyimide film having a thickness of 50 μm (manufactured by Du Pont-Toray Co., Ltd., “Kapton 200V”) was cut into a size of 12 cm × 12 cm, and nickel was applied on one surface thereof by vacuum evaporation to a thickness of 100 Å. Further, a substrate on which copper was applied to a thickness of 0.25 μm by vacuum evaporation was formed thereon.

【0023】次に、該基板を弱アルカリ性の脱脂剤に1
分間浸漬して脱脂した後2分間水洗して表面を清浄化し
た。次いで、2.5モル/リットルのヒドラジンと1.
0モル/リットルのエチレンジアミンの混合有機アルカ
リ溶液に浸漬して露出している絶縁体フィルム表面を親
水化し、水洗後に希塩酸溶液に浸漬して基板表面を中和
し、さらにキャラクタライジング液、アクセレーティン
グ液(共に奥野製薬社製)に浸漬して基板表面に無電解
めっき用の触媒を付与した。引き続き表1に示す組成の
無電解銅めっき液に基板を3分間浸漬して表面に無電解
銅めっき被膜を形成した。このときのめっき条件はめっ
き液の温度60℃、pH=12.5で、空気撹拌による
処理を行った。
Next, the substrate was treated with a weak alkaline degreasing agent for 1 hour.
The surface was cleaned by immersion for 2 minutes and degreased, and then washed with water for 2 minutes. Then 2.5 mol / l of hydrazine and 1.
The exposed insulator film surface is hydrophilized by immersion in a mixed organic alkali solution of 0 mol / liter ethylenediamine, and after washing with water, immersed in a dilute hydrochloric acid solution to neutralize the substrate surface. (Both manufactured by Okuno Pharmaceutical Co., Ltd.) to give a catalyst for electroless plating on the substrate surface. Subsequently, the substrate was immersed in an electroless copper plating solution having the composition shown in Table 1 for 3 minutes to form an electroless copper plating film on the surface. The plating conditions at this time were a plating solution temperature of 60 ° C. and a pH of 12.5, and the treatment was carried out by air stirring.

【0024】[0024]

【表1】 無電解めっき液組成 ───────── ──────────────────────── 硫酸銅 : 10g/l EDTA : 30g/l HCHO(36%sol.) : 5ml/l PEG#1000 : 0.5g/l ジピリジル : 10ml/l ──────────────────────── 無電解めっき処理後、引き続き表2に示す組成の電気銅
めっき液を用いて電気めっき処理を行い厚さ5μmの銅
被膜を形成した。このときのめっき条件は、めっき液の
温度は室温、撹拌は機械撹拌で、通電時の電流密度は3
A/dmであり、通電時間は9分間とした。
[Table 1] Composition of electroless plating solution ───────── 銅 Copper sulfate: 10 g / l EDTA: 30 g / l HCHO (36% sol.): 5 ml / l PEG # 1000: 0.5 g / l dipyridyl: 10 ml / l (4) After the electroless plating, an electroplating treatment was performed using an electrolytic copper plating solution having the composition shown in Table 2 to form a copper film having a thickness of 5 μm. The plating conditions at this time were as follows: the temperature of the plating solution was room temperature, the stirring was mechanical stirring, and the current density during energization was 3
A / dm 2 and the energization time was 9 minutes.

【0025】[0025]

【表2】 電気銅めっき液組成 ───────── ──────────────────── 硫酸銅 : 80g/l 硫酸 :200g/l 光沢剤 : 適量 塩素イオン :50mg/l ──────────────────── 得られた基板の銅被膜側から光をあててピンホールの有
無を確認したところ、12cm×12cmの領域内では
光の透過は認められず、ピンホールが存在しないことが
わかった。この基板を用いて配線幅が40μm、配線ピ
ッチが80μmのフレキシブル配線板を常法によるサブ
トラクティブ法に基づいて作成したところ、配線部分に
ピンホールが原因で生ずる欠陥部分や断線部分などの欠
陥のないものが得られた。なお、本実施例は、サブトラ
クティブ法によって絶縁体フィルムの片面に配線パター
ンを有する片面フレキシブル配線板を作成した例を示し
たものであるが、絶縁体フィルムの両面に配線部を有す
る両面フレキシブル配線板、あるいはセミアディティブ
法による片面または両面フレキシブル配線板についても
同様に優れた結果が得られることが確認されている。 実施例2 脱脂処理後の絶縁体フィルム表面の親水化処理を2モル
/リットルの水酸化カリウム溶液を用いた以外は、実施
例1と同様の手順で片面フレキシブル配線板を作成した
ところ、得られた配線板はピンホールの存在に基づく配
線部の欠陥のないものが得られた。 実施例3 脱脂処理後の絶縁体フィルム表面の親水化処理を2.5
モル/リットルのヒドラジンと2モル/リットルの水酸
化カリウムの混合アルカリ溶液を用いた以外は実施例1
と同様の手順で片面フレキシブル配線板を作成したとこ
ろ、得られた配線板はピンホールの存在に基づく配線部
の欠陥のないものが得られた。 比較例1 厚さ50μmのポリイミドフィルム(東レ・デュポン社
製、「カプトン200V」)を12cm×12cmの大
きさに切り出し、その片面に真空蒸着法によってニッケ
ルを100オングストロームの厚さに被着させ、さらに
その上に真空蒸着法によって銅を0.25μmの厚さに
被着させた基板を作成した。
[Table 2] Composition of electrolytic copper plating solution ───────── 銅 Copper sulfate: 80 g / l Sulfuric acid: 200 g / l Gloss Agent: Appropriate amount Chloride ion: 50 mg / l と こ ろ Light was applied from the copper coating side of the obtained substrate to confirm the presence or absence of pinholes , 12 cm × 12 cm, no light transmission was observed, and it was found that there was no pinhole. Using this substrate, a flexible wiring board having a wiring width of 40 μm and a wiring pitch of 80 μm was prepared based on a subtractive method according to a conventional method. Not what you got. The present embodiment shows an example in which a single-sided flexible wiring board having a wiring pattern on one side of an insulating film is formed by a subtractive method. It has been confirmed that excellent results can be similarly obtained with a board or a single-sided or double-sided flexible wiring board by a semi-additive method. Example 2 A single-sided flexible wiring board was prepared in the same procedure as in Example 1, except that the surface of the insulator film after the degreasing treatment was hydrophilized using a 2 mol / L potassium hydroxide solution. The obtained wiring board had no wiring part defect based on the presence of the pinhole. Example 3 The surface of the insulator film after the degreasing treatment was hydrophilized by 2.5.
Example 1 except that a mixed alkali solution of hydrazine (mol / l) and potassium hydroxide (2 mol / l) was used.
When a single-sided flexible wiring board was prepared in the same procedure as described above, the obtained wiring board was free from defects in the wiring portion due to the presence of pinholes. Comparative Example 1 A 50 μm thick polyimide film (manufactured by Du Pont-Toray Co., Ltd., “Kapton 200V”) was cut into a size of 12 cm × 12 cm, and nickel was applied to one surface thereof by vacuum evaporation to a thickness of 100 Å. Further, a substrate was formed on which copper was applied to a thickness of 0.25 μm by a vacuum evaporation method.

【0026】次に、該基板を弱アルカリ性の脱脂剤に1
分間浸漬して脱脂した後2分間水洗して表面を清浄化し
た。次いで、0.01モル/リットルのヒドラジンと
0.01モル/リットルのエチレンジアミンの混合有機
アルカリ溶液に浸漬して露出している絶縁体フィルム表
面を親水化した。その後基板に無電解銅めっき処理を施
すための工程を経ることなく直ちに実施例1と同様の手
順で電気銅めっき法によって5μmの銅被膜を形成し
た。
Next, the substrate was treated with a weak alkaline degreasing agent for 1 hour.
The surface was cleaned by immersion for 2 minutes and degreased, and then washed with water for 2 minutes. Next, the exposed insulator film surface was hydrophilized by immersion in a mixed organic alkali solution of 0.01 mol / l hydrazine and 0.01 mol / l ethylenediamine. Thereafter, a 5 μm-thick copper film was formed by an electrolytic copper plating method immediately following the same procedure as in Example 1 without going through a step of performing electroless copper plating on the substrate.

【0027】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmでその数は真空蒸着後のピンホール
数と殆ど変化がなかった。
The substrate was irradiated with light from the copper coating side to check for pinholes.
In the region of No. 3, light was transmitted, and the size of the pinholes was several μm to one hundred and several tens μm, and the number was almost the same as the number of pinholes after vacuum deposition.

【0028】この基板を用いて配線幅が40μm、配線
ピッチが80μmのフレキシブル配線板を常法によるサ
ブトラクティブ法に基づいて作成したところ、配線部分
にピンホールが原因で生ずる欠陥部分や断線部分などの
欠陥が多数確認され、この基板は狭ピッチの微小配線基
板には適さないことがわかった。 比較例2 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで5モル/リットルのヒドラジンと
3モル/リットルのエチレンジアミンの混合溶液に浸漬
して、露出している絶縁体フィルム表面を親水化した。
その後、基板に無電解めっき処理を施すための工程を経
ることなく直ちに実施例1と同様の手順で電気銅めっき
法によって、5μm銅被膜を形成した。
Using this substrate, a flexible wiring board having a wiring width of 40 μm and a wiring pitch of 80 μm was prepared based on a subtractive method according to a conventional method. Many defects were confirmed, and it was found that this substrate was not suitable for a fine wiring substrate having a narrow pitch. Comparative Example 2 The substrate prepared in the same manner as in Comparative Example 1 was immersed in a weak alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, it was immersed in a mixed solution of 5 mol / l hydrazine and 3 mol / l ethylenediamine to hydrophilize the exposed surface of the insulator film.
Thereafter, a 5 μm copper film was formed immediately by an electrolytic copper plating method in the same procedure as in Example 1 without passing through a step of performing electroless plating on the substrate.

【0029】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmで、加えて筋状の裂け目も存在し
た。ピンホールの数は真空蒸着した後のピンホール数と
比較し増加していた。
When light was applied to the obtained substrate from the copper coating side to check for the presence or absence of pinholes, a 12 cm × 12 cm
In the region, light was transmitted, and the size of the pinhole was several μm to one hundred and several tens μm, and in addition, a streak-like crack was also present. The number of pinholes increased compared to the number of pinholes after vacuum deposition.

【0030】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例3 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで0.1モル/リットルのヒドラジ
ンと0.01モル/リットル水酸化カリウムの混合溶液
に浸漬して、露出している絶縁体フィルム表面を親水化
した。その後、基板に無電解めっき処理を施すための工
程を経ることなく直ちに実施例1と同様の手順で電気銅
めっき法によって、5μm銅被膜を形成した。
When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, defects similar to those in Comparative Example 1 were confirmed, and it was found that the substrate was not suitable for a fine wiring board having a narrow pitch. Comparative Example 3 The substrate prepared in the same manner as in Comparative Example 1 was immersed in a weakly alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, the exposed insulator film surface was hydrophilized by immersion in a mixed solution of 0.1 mol / l hydrazine and 0.01 mol / l potassium hydroxide. Thereafter, a 5 μm copper film was formed immediately by an electrolytic copper plating method in the same procedure as in Example 1 without passing through a step of performing electroless plating on the substrate.

【0031】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例4 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで6モル/リットルのヒドラジンと
5モル/リットル水酸化カリウムの混合溶液に浸漬し
て、露出している絶縁体フィルム表面を親水化した。そ
の後、基板に無電解めっき処理を施すための工程を経る
ことなく直ちに実施例1と同様の手順で電気銅めっき法
によって、5μm銅被膜を形成した。
When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as those in Comparative Example 1 were confirmed, and it was found that the flexible wiring board was not suitable for a fine wiring board having a narrow pitch. Comparative Example 4 The substrate prepared in the same manner as in Comparative Example 1 was immersed in a weakly alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, it was immersed in a mixed solution of 6 mol / l hydrazine and 5 mol / l potassium hydroxide to hydrophilize the exposed surface of the insulator film. Thereafter, a 5 μm copper film was formed immediately by an electrolytic copper plating method in the same procedure as in Example 1 without passing through a step of performing electroless plating on the substrate.

【0032】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmで加えて筋状の裂け目も存在した。
ピンホールの数は真空蒸着した後のピンホール数と比較
して増加していた。
The substrate was irradiated with light from the copper coating side to check for the presence of pinholes.
In the region, light was transmitted, and the size of the pinhole was from several μm to one hundred and several tens μm, and there was also a streak-like crack.
The number of pinholes increased compared to the number of pinholes after vacuum deposition.

【0033】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例5 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで0.01モル/リットルの水酸化
カリウム溶液に浸漬して、露出している絶縁体フィルム
表面を親水化した。その後、基板に無電解めっき処理を
施すための工程を経ることなく直ちに実施例1と同様の
手順で電気銅めっき法によって、5μm銅被膜を形成し
た。
When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as those in Comparative Example 1 were confirmed, and it was found that the substrate was not suitable for a fine wiring board having a narrow pitch. Comparative Example 5 The substrate prepared in the same manner as in Comparative Example 1 was immersed in a weakly alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, the exposed insulator film surface was hydrophilized by immersion in a 0.01 mol / liter potassium hydroxide solution. Thereafter, a 5 μm copper film was formed immediately by an electrolytic copper plating method in the same procedure as in Example 1 without passing through a step of performing electroless plating on the substrate.

【0034】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmでその数は真空蒸着した後のピンホ
ール数とほぼ変化がなかった。
When light was applied from the copper coating side of the obtained substrate to confirm the presence or absence of pinholes, it was 12 cm × 12 cm.
In the region, the light was transmitted, and the size of the pinholes was several μm to one hundred and several tens μm, and the number was almost the same as the number of pinholes after vacuum deposition.

【0035】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例6 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで5モル/リットルの水酸化カリウ
ム溶液に浸漬して、露出している絶縁体フィルム表面を
親水化した。
When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as in Comparative Example 1 were confirmed, and it was found that the flexible wiring board was not suitable for a fine wiring board having a narrow pitch. Comparative Example 6 A substrate prepared in the same manner as in Comparative Example 1 was immersed in a weakly alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, it was immersed in a 5 mol / l potassium hydroxide solution to hydrophilize the exposed surface of the insulator film.

【0036】その後、基板に無電解めっき処理を施すた
めの工程を経ることなく直ちに実施例1と同様の手順で
電気銅めっき法によって、5μm銅被膜を形成した。
Thereafter, a 5 μm copper film was immediately formed by the electrolytic copper plating method in the same procedure as in Example 1 without going through the step of subjecting the substrate to electroless plating.

【0037】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmで加えて筋状の裂け目も存在した。
ピンホール数は真空蒸着した後のピンホール数と比較し
て増加していた。
When light was applied from the copper coating side of the obtained substrate to confirm the presence or absence of pinholes, it was found that the size was 12 cm × 12 cm.
In the region, light was transmitted, and the size of the pinhole was from several μm to one hundred and several tens μm, and there was also a streak-like crack.
The number of pinholes increased compared to the number of pinholes after vacuum deposition.

【0038】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。
When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, defects similar to those in Comparative Example 1 were confirmed, and it was found that the flexible wiring board was not suitable for a fine wiring board having a narrow pitch.

【0039】[0039]

【発明の効果】以上述べたように本発明によるときは、
多数のピンホールを生じやすい乾式めっき被膜を有する
基板上に無電解めっき被膜を形成させることにより、ピ
ンホール部に露出している下地金属層の電気めっき時に
おける溶解を防止し、5μm程度の薄い電気めっき被膜
を形成した場合にもピンホール欠陥のない基板を得るこ
とができ、したがってサブトラクティブ法などによる極
めて狭小なピッチを有する配線板を作成する場合におい
ても、配線部の欠陥のない信頼性の優れたフレキシブル
配線板を得ることができるので工業上優れた発明である
ということができる。
As described above, according to the present invention,
By forming an electroless plating film on a substrate having a dry plating film that easily causes a large number of pinholes, dissolution of the underlying metal layer exposed in the pinhole portion during electroplating is prevented, and the thickness is reduced to about 5 μm. Even when an electroplated film is formed, a substrate free of pinhole defects can be obtained. Therefore, even when a wiring board having an extremely narrow pitch is formed by a subtractive method or the like, the reliability of the wiring portion is free from defects. Therefore, it can be said that the present invention is an industrially excellent invention because a flexible wiring board excellent in the above can be obtained.

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H05K 1/03 670 C23C 14/14 C23C 18/18 C25D 5/10 H05K 3/38 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) H05K 1/03 670 C23C 14/14 C23C 18/18 C25D 5/10 H05K 3/38

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 絶縁体フィルムの少なくとも片面に、接
着剤を介さずに、直接ニッケル層を下地金属層として形
成し、さらに該下地金属層上に薄膜の銅層を形成した基
板における該ニッケル層または銅層上にさらに銅の導体
層を形成した後、サブトラクティブ法またはセミアディ
ティブ法によって配線部を形成することによりフレキシ
ブル配線板を製造する方法において、該金属下地層およ
び薄膜の銅層を形成した後の基板を、無機アルカリ溶液
または有機アルカリ溶液のうち少なくとも一方の溶液で
処理した後、該基板表面に無電解めっき銅被膜を0.0
1μm以上の厚さで形成し、さらに該無電解銅めっき被
膜上に銅の導体層を形成することを特徴とする2層フレ
キシブル基板の製造方法。
1. A nickel layer on a substrate, wherein a nickel layer is directly formed as a base metal layer on at least one side of an insulator film without using an adhesive, and a thin copper layer is formed on the base metal layer. Or after further forming a copper conductor layer on the copper layer, in a method of manufacturing a flexible wiring board by forming a wiring portion by a subtractive method or a semi-additive method, forming the copper layer of the metal base layer and the thin film After treating the substrate with at least one of an inorganic alkaline solution and an organic alkaline solution, the surface of the substrate is coated with an electroless plated copper film by 0.0
A method for manufacturing a two-layer flexible substrate, comprising: forming a layer having a thickness of 1 μm or more; and further forming a copper conductor layer on the electroless copper plating film.
【請求項2】 該無電解銅めっき被膜上に形成する銅の
導体層の厚さは5μm〜10μmであることを特徴とす
る請求項1記載の2層フレキシブル基板の製造方法。
2. The method according to claim 1, wherein a thickness of the copper conductor layer formed on the electroless copper plating film is 5 μm to 10 μm.
【請求項3】 該絶縁体フィルムの片面または両面に直
接形成する下地金属層のニッケルと該下地金属層上に形
成する薄膜の銅層は、乾式めっき法によって形成される
ことを特徴とする請求項1または2記載の2層フレキシ
ブル基板の製造方法。
Wherein the insulator layer of copper thin film formed of nickel and the lower ground metal layer on the base metal layer to one surface or formed directly on both surfaces of the film claims characterized in that it is formed by dry plating method Item 3. The method for producing a two-layer flexible substrate according to item 1 or 2 .
JP06336511A 1994-12-22 1994-12-22 Method for manufacturing two-layer flexible substrate Expired - Lifetime JP3125838B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06336511A JP3125838B2 (en) 1994-12-22 1994-12-22 Method for manufacturing two-layer flexible substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06336511A JP3125838B2 (en) 1994-12-22 1994-12-22 Method for manufacturing two-layer flexible substrate

Publications (2)

Publication Number Publication Date
JPH08181402A JPH08181402A (en) 1996-07-12
JP3125838B2 true JP3125838B2 (en) 2001-01-22

Family

ID=18299891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06336511A Expired - Lifetime JP3125838B2 (en) 1994-12-22 1994-12-22 Method for manufacturing two-layer flexible substrate

Country Status (1)

Country Link
JP (1) JP3125838B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102064958B1 (en) * 2019-05-31 2020-01-10 김경태 Mat for preventing noises through floors

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2003004262A1 (en) * 2001-07-06 2004-10-21 鐘淵化学工業株式会社 Laminate and manufacturing method thereof
US20040231141A1 (en) * 2001-07-06 2004-11-25 Masaru Nishinaka Laminate and its producing method
JP4560726B2 (en) * 2005-05-16 2010-10-13 ダイソー株式会社 Method for producing flexible copper-clad laminate
JP4872257B2 (en) * 2005-07-19 2012-02-08 住友金属鉱山株式会社 Two-layer plated substrate and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102064958B1 (en) * 2019-05-31 2020-01-10 김경태 Mat for preventing noises through floors

Also Published As

Publication number Publication date
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