JP3123342B2 - Apparatus and method for cleaning workpiece electrode - Google Patents

Apparatus and method for cleaning workpiece electrode

Info

Publication number
JP3123342B2
JP3123342B2 JP06086666A JP8666694A JP3123342B2 JP 3123342 B2 JP3123342 B2 JP 3123342B2 JP 06086666 A JP06086666 A JP 06086666A JP 8666694 A JP8666694 A JP 8666694A JP 3123342 B2 JP3123342 B2 JP 3123342B2
Authority
JP
Japan
Prior art keywords
probe
electrode
work
voltage
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP06086666A
Other languages
Japanese (ja)
Other versions
JPH07297219A (en
Inventor
宏 土師
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP06086666A priority Critical patent/JP3123342B2/en
Priority to US08/427,218 priority patent/US5676856A/en
Publication of JPH07297219A publication Critical patent/JPH07297219A/en
Application granted granted Critical
Publication of JP3123342B2 publication Critical patent/JP3123342B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7801Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78302Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85014Thermal cleaning, e.g. decomposition, sublimation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、プリント基板やリード
フレームなどの基板や、基板に搭載されたチップなどの
ワークの電極をスポット的にクリーニングするためのワ
ークの電極のクリーニング装置およびクリーニング方法
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for cleaning a workpiece electrode such as a printed circuit board or a lead frame, or a workpiece electrode such as a chip mounted thereon. Things.

【0002】[0002]

【従来の技術】基板の電極とこの基板に搭載されたチッ
プの電極をワイヤで接続するワイヤボンディングにおい
て、基板やチップの表面の電極が酸化膜や有機物質など
により汚れているとボンディング不良が生じやすい。そ
こで本出願人は、ワイヤボンディングに先立って基板や
チップの表面の電極をクリーニングするプラズマクリー
ニング装置を提案した(特開平4−123430号公
報)。
2. Description of the Related Art In wire bonding in which electrodes of a substrate and electrodes of a chip mounted on the substrate are connected by wires, if the electrodes on the surface of the substrate or the chip are contaminated with an oxide film or an organic substance, a bonding failure occurs. Cheap. Therefore, the present applicant has proposed a plasma cleaning apparatus for cleaning electrodes on the surface of a substrate or a chip prior to wire bonding (Japanese Patent Application Laid-Open No. 4-123430).

【0003】このプラズマクリーニング装置は、チップ
が搭載された基板をケーシングの内部に収納し、ケーシ
ング内にプラズマを発生させることにより、電極の表面
にイオンを衝突させてクリーニングするものであり、多
数枚の基板を作業性よくクリーニングできる長所を有し
ている。
In this plasma cleaning apparatus, a substrate on which a chip is mounted is housed in a casing, and plasma is generated in the casing so that ions are bombarded on the surface of the electrode to clean the substrate. The advantage is that the substrate can be cleaned with good workability.

【0004】[0004]

【発明が解決しようとする課題】しかしながら上記従来
のプラズマクリーニング装置は、電極だけでなく、基板
やチップの表面全面にイオンが衝突するため、電極以外
の基板やチップの表面がクリーニングによって傷つきや
すいという問題点があった。またこのプラズマクリーニ
ング装置はかなり大型設備であって大きな設置スペース
を必要とし、また相当高価なものであった。
However, in the above-described conventional plasma cleaning apparatus, since ions collide not only with the electrodes but also over the entire surface of the substrate or chip, the surface of the substrate or chip other than the electrodes is easily damaged by cleaning. There was a problem. Further, this plasma cleaning apparatus is a rather large facility, requires a large installation space, and is considerably expensive.

【0005】そこで本発明は、基板やチップの電極のみ
を簡単にクリーニングできるワークの電極のクリーニン
グ装置およびクリーニング方法を提供することを目的と
する。
SUMMARY OF THE INVENTION It is an object of the present invention to provide an apparatus and a method for cleaning a work electrode, which can easily clean only electrodes of a substrate or a chip.

【0006】[0006]

【課題を解決するための手段】このために本発明は、
ークを位置決めする位置決め部と、ワークの電極に電圧
を付与する第1のプローブと、この電極に接近してこの
電極との間で放電を発生させる針状電極である下端部を
有する第2のプローブと、第1のプローブと第2のプロ
ーブにそれぞれ電圧を付与する電圧付与手段と、第2の
プローブを基板に対して相対的に移動させる移動手段と
からワークの電極のクリーニング装置を構成したもので
ある。
Means for Solving the Problems] The present invention To this end, word
A positioning portion for positioning the workpiece, a first probe for applying a voltage to the electrode of the work, and a lower end portion which is a needle-like electrode which approaches the electrode and generates a discharge between the electrode and the first probe.
Cleaning the electrode of the workpiece from a second probe having the first probe, a voltage applying means for applying a voltage to each of the first probe and the second probe, and a moving means for moving the second probe relative to the substrate. This is a device configuration.

【0007】[0007]

【作用】上記構成によれば、第1のプローブにより基板
の電極に電圧を付与し、また第2のプローブをこの電極
に接近させて電圧を付与すると、電極と第2のプローブ
の間に放電が発生し、この放電により発生した電子が電
極の表面に衝突して電極表面をクリーニングする。
According to the above construction, when a voltage is applied to the electrode of the substrate by the first probe and a voltage is applied by bringing the second probe close to this electrode, a discharge is caused between the electrode and the second probe. Are generated, and electrons generated by the discharge collide with the surface of the electrode to clean the surface of the electrode.

【0008】[0008]

【実施例】次に、図面を参照しながら本発明の実施例を
説明する。図1は本発明の第一実施例のワークの電極の
クリーニング装置の側面図、図2は同要部断面図、図3
は同要部拡大断面図、図4は同電圧付与回路のブロック
図である。図1において、1はクリーニングユニットで
あって、アーム2の先端部にプローブ部3を保持してい
る。次に図2を参照しながらクリーニングユニット1の
構造を説明する。
Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a side view of an apparatus for cleaning an electrode of a work according to a first embodiment of the present invention, FIG.
FIG. 4 is an enlarged sectional view of the main part, and FIG. In FIG. 1, reference numeral 1 denotes a cleaning unit, which holds a probe unit 3 at the tip of an arm 2. Next, the structure of the cleaning unit 1 will be described with reference to FIG.

【0009】アーム2は例えば銅などの導電材にて形成
されている。プローブ部3は第1のプローブ4と第2の
プローブ5から成っている。第1のプローブ4は下細長
筒形の中空体であって、セラミックなどの絶縁材から成
っており、その外表面および下面には導電膜6がコーテ
ィングされている(図3も参照)。この導電膜6は例え
ばニッケルメッキである。
The arm 2 is formed of a conductive material such as copper. The probe section 3 includes a first probe 4 and a second probe 5. The first probe 4 is a hollow body having a lower elongated cylindrical shape, made of an insulating material such as ceramic, and has an outer surface and a lower surface coated with a conductive film 6 (see also FIG. 3). This conductive film 6 is, for example, nickel plating.

【0010】図2において、第1のプローブ4はアーム
2の先端部に保持されている。第2のプローブ5はピン
状であって、第1のプローブ4の内部に垂直に配設され
ており、その下端部は先鋭な針状電極となっている。第
2のプローブ5の素材は、例えばタングステンである。
また第1のプローブ4と第2のプローブ5の下端部には
距離Dがある。このように、第2のプローブ5を第1の
プローブ4の内部に収納することにより、クリーニング
ユニット1の構造をコンパクトにできる。
In FIG. 2, the first probe 4 is held at the tip of the arm 2. The second probe 5 has a pin shape and is disposed vertically inside the first probe 4, and has a sharp needle-like electrode at the lower end. The material of the second probe 5 is, for example, tungsten.
There is a distance D between the lower ends of the first probe 4 and the second probe 5. As described above, by housing the second probe 5 inside the first probe 4, the structure of the cleaning unit 1 can be made compact.

【0011】アーム2の先端上部には絶縁体7が装着さ
れており、絶縁体7の内部には導電性のねじ8が螺着さ
れている。絶縁体7の上面には座金9が配設されてい
る。第2のプローブ5はねじ8および座金9を貫通して
おり、その上端部は二つ割りされた保持具10に保持さ
れている。11は保持具10を抱持するリングである。
保持具10の外形は下細のテーパ状となっており、リン
グ11を押し上げれば保持具10は内方に締って第2の
プローブ5をしっかり保持し、またリング11を押し下
げれば保持具10は外方へ緩んで第2のプローブ5の保
持状態はルーズになる。そこで第2のプローブ5を上げ
下げすることにより、上記距離Dの大きさを調整でき
る。この距離Dを調整することにより放電に最適な距離
を調整できる。
An insulator 7 is mounted on the upper end of the arm 2, and a conductive screw 8 is screwed inside the insulator 7. A washer 9 is provided on the upper surface of the insulator 7. The second probe 5 penetrates the screw 8 and the washer 9, and the upper end thereof is held by a split holder 10. Reference numeral 11 denotes a ring for holding the holder 10.
The outer shape of the holder 10 is a tapered shape with a small diameter. When the ring 11 is pushed up, the holder 10 is tightened inward to hold the second probe 5 firmly, and when the ring 11 is pushed down, the holder is held. The tool 10 is loosened outward, and the holding state of the second probe 5 is loose. Therefore, by raising and lowering the second probe 5, the size of the distance D can be adjusted. By adjusting the distance D, the optimum distance for discharge can be adjusted.

【0012】アーム2には第1のリード線12が接続さ
れている。13は第1のリード線12の止ねじである。
また座金9と絶縁体7の間には第2のリード線14が接
続されている。第1のリード線12と第2のリード線1
4は、電圧付与手段に接続されている。第1のプローブ
4の導電膜6はアーム2に接触しており、第1のリード
線12からアーム2に電圧が付与されると、導電膜6に
も電圧が付与される。また第2のリード線14から座金
9やねじ8に電圧が付与されることにより、第2のプロ
ーブ5にも電圧が付与される。なおアーム2と第2のプ
ローブ5は絶縁体7によって絶縁されている。第1のプ
ローブ4の導電膜6には+電位が付与され、また第2の
プローブ5には−電位が付与される。
A first lead wire 12 is connected to the arm 2. Reference numeral 13 denotes a set screw of the first lead wire 12.
A second lead wire 14 is connected between the washer 9 and the insulator 7. First lead wire 12 and second lead wire 1
4 is connected to the voltage applying means. The conductive film 6 of the first probe 4 is in contact with the arm 2, and when a voltage is applied to the arm 2 from the first lead wire 12, a voltage is also applied to the conductive film 6. When a voltage is applied from the second lead wire 14 to the washer 9 and the screw 8, a voltage is also applied to the second probe 5. The arm 2 and the second probe 5 are insulated by an insulator 7. A positive potential is applied to the conductive film 6 of the first probe 4 and a negative potential is applied to the second probe 5.

【0013】次に図4を参照しながら電圧付与回路18
について説明する。18aは直流の高電圧を発生する電
源回路でありマイナス側が第2のリード線14を介して
第2のプローブ5に接続されている。18bは、電源回
路18aのプラス側に接続された定電流回路であり、定
電流を発生する。18dはタイマであり、外部の制御部
(図示せず)からのトリガ信号Trによりスイッチング
回路18cを一定時間オン/オフする。18eは放電を
安定させるための抵抗を有する安定器である。安定器
と、第1のプローブ4の導電膜6は、第1のリード線1
2等によって接続されている。
Next, referring to FIG.
Will be described. Reference numeral 18 a denotes a power supply circuit for generating a high DC voltage, and the negative side is connected to the second probe 5 via the second lead wire 14. A constant current circuit 18b is connected to the positive side of the power supply circuit 18a and generates a constant current. Reference numeral 18d denotes a timer which turns on / off the switching circuit 18c for a certain period of time by a trigger signal Tr from an external control unit (not shown). Reference numeral 18e denotes a ballast having a resistance for stabilizing discharge. The ballast and the conductive film 6 of the first probe 4 are connected to the first lead wire 1.
2 and so on.

【0014】図2において、アーム2は中空であって、
その内部には吸引路15が穿孔されている。この吸引路
15は第1のプローブ4の内部に連通している。図1に
おいて、アーム2の吸引路15はチューブ16を介して
バキューム装置17に接続されている。したがってバキ
ューム装置17が駆動することにより、第1のプローブ
4の内部の空気は吸引される(図2の矢印参照)。
In FIG. 2, the arm 2 is hollow,
A suction passage 15 is perforated in the inside. This suction path 15 communicates with the inside of the first probe 4. In FIG. 1, the suction path 15 of the arm 2 is connected to a vacuum device 17 via a tube 16. Therefore, when the vacuum device 17 is driven, the air inside the first probe 4 is sucked (see the arrow in FIG. 2).

【0015】図1において、21は基板37が載置して
位置決めされた位置決め部であり、その側面にはシリン
ダ22が設けられている。この基板37はガラエポ、セ
ラミックなどのプリント基板であり、その上面にはチッ
プ39がボンディングされている。図2に示すように、
基板37の表面には電極38が形成されており、またチ
ップ39の表面には電極40が形成されている。図1に
おいて、シリンダ22のロッド23はマスク24を保持
している。シリンダ21のロッド23が引き込むことに
より、マスク24で基板37を位置決め部21に押し付
けて固定する。
In FIG. 1, reference numeral 21 denotes a positioning portion on which a substrate 37 is placed and positioned, and a cylinder 22 is provided on a side surface thereof. The substrate 37 is a printed board made of glass epoxy, ceramic, or the like, and a chip 39 is bonded to an upper surface thereof. As shown in FIG.
An electrode 38 is formed on the surface of the substrate 37, and an electrode 40 is formed on the surface of the chip 39. In FIG. 1, a rod 23 of a cylinder 22 holds a mask 24. When the rod 23 of the cylinder 21 is pulled in, the substrate 37 is pressed against the positioning portion 21 by the mask 24 and fixed.

【0016】アーム2の基端部はフレーム25に支持さ
れている。フレーム25の後端部にはカムフォロア2
6,27が軸着されており、カムフォロア26,27は
カム28を挾持している。モータ29に駆動されてカム
28が回転すると、フレーム25はピン30を中心に上
下方向に揺動し、アーム2も同方向に揺動してプローブ
部3は上下動する(矢印N参照)。プローブ部3が下降
すると第1のプローブ4は基板37の電極38あるいは
チップ39の電極40に着地して接触する(図2鎖線お
よび図3参照)。すなわちフレーム25、カムフォロア
26,27、カム28、モータ29などはプローブ部3
に上下動作を行わせる上下動手段となっている。図3に
おいて、電極38の表面には酸化膜や有機物質などの汚
れKが付着している。
The base end of the arm 2 is supported by a frame 25. A cam follower 2 is provided at the rear end of the frame 25.
The cam followers 26 and 27 hold the cam 28 therebetween. When the cam 28 rotates by being driven by the motor 29, the frame 25 swings up and down around the pin 30, the arm 2 also swings in the same direction, and the probe unit 3 moves up and down (see arrow N). When the probe section 3 descends, the first probe 4 lands on the electrode 38 of the substrate 37 or the electrode 40 of the chip 39 and comes into contact therewith (see the chain line in FIG. 2 and FIG. 3). That is, the frame 25, the cam followers 26 and 27, the cam 28, the motor 29, etc.
Up and down movement means. In FIG. 3, dirt K such as an oxide film or an organic substance is attached to the surface of the electrode 38.

【0017】図1において、31はテーブル装置であっ
て、Xテーブル32とYテーブル33を段積して構成さ
れている。フレーム25はYテーブル33上の軸受36
にピン30にて軸着されている。Xテーブル32の駆動
用モータ34とYテーブル33の駆動用モータ35が駆
動すると、フレーム25やアーム2はX方向やY方向に
水平移動し、プローブ部3を所定のクリーニング位置
(電極38,40の位置)に位置させる。なおアーム2
の揺動機構やテーブル装置31などの機構は、例えば特
開平4−291735号公報に記載されたワイヤボンデ
ィング装置と同じである。
In FIG. 1, reference numeral 31 denotes a table device, which is constructed by stacking an X table 32 and a Y table 33. The frame 25 has a bearing 36 on a Y table 33.
Are mounted on pins 30. When the drive motor 34 for the X table 32 and the drive motor 35 for the Y table 33 are driven, the frame 25 and the arm 2 move horizontally in the X direction and the Y direction, and move the probe unit 3 to a predetermined cleaning position (electrodes 38, 40). Position). Arm 2
The swing mechanism and the mechanism such as the table device 31 are the same as those of the wire bonding apparatus described in, for example, JP-A-4-291735.

【0018】このワークの電極のクリーニング装置は上
記のように構成されており、次に全体の動作について説
明する。図1において、テーブル装置31が駆動するこ
とにより、プローブ部3はX方向やY方向に水平移動
し、基板37の所定の電極38又は電極40の上方で停
止する。次にモータ29が駆動してカム28が回転する
ことにより、アーム2は下方へ揺動し、第1のプローブ
4は電極38の上面に接地する(図3参照)。
The apparatus for cleaning an electrode of a work is constructed as described above. Next, the overall operation will be described. In FIG. 1, when the table device 31 is driven, the probe unit 3 horizontally moves in the X direction and the Y direction, and stops above a predetermined electrode 38 or an electrode 40 of the substrate 37. Next, when the motor 29 is driven to rotate the cam 28, the arm 2 swings downward, and the first probe 4 is grounded on the upper surface of the electrode 38 (see FIG. 3).

【0019】そこで第1のプローブ4に+電圧が付与さ
れ、第2のプローブ5に−電圧が付与される。第1のプ
ローブ4に+電圧が付与されると、これが接地する電極
38も+電圧が付与される。したがって第2のプローブ
5と電極38の間に電位差が生じて放電Aが発生する。
この放電によって発生した電子は+電位の電極38の表
面に衝突し、熱により汚れKを除去する。このときバキ
ューム装置17も駆動して電極38から除去された汚れ
Kを吸引する。そして放電によるクリーニングが終了し
たならば、第1のプローブ4や第2のプローブ5に対す
る電圧付与は停止し、またバキューム装置17による吸
引も停止し、カム28が回転することによりアーム2は
上方へ揺動してプローブ部3も上昇し、一連の作業は終
了する。そこで再びテーブル装置31が駆動してプロー
ブ部3は次の電極38の上方へ移動し、上述した動作が
繰り返される。チップ39の電極40も同様の手法によ
りクリーニングされる。上述のようにして基板37やチ
ップ39のすべての電極38,40をクリーニングした
ならば、次にワイヤボンディング装置によりチップ39
の電極40と基板37の電極38をワイヤで接続するワ
イヤボンディングが行われる。
Then, a positive voltage is applied to the first probe 4 and a negative voltage is applied to the second probe 5. When a positive voltage is applied to the first probe 4, a positive voltage is also applied to the electrode 38 to which it is grounded. Therefore, a potential difference occurs between the second probe 5 and the electrode 38, and the discharge A occurs.
The electrons generated by this discharge collide with the surface of the positive electrode 38, and remove the stain K by heat. At this time, the vacuum device 17 is also driven to suck the dirt K removed from the electrode 38. When the cleaning by the discharge is completed, the application of the voltage to the first probe 4 and the second probe 5 is stopped, the suction by the vacuum device 17 is also stopped, and the arm 2 is moved upward by rotating the cam 28. The probe unit 3 is also swung up and the series of operations is completed. Then, the table device 31 is driven again, and the probe unit 3 moves above the next electrode 38, and the above-described operation is repeated. The electrode 40 of the chip 39 is also cleaned by the same method. After all the electrodes 38 and 40 of the substrate 37 and the chip 39 have been cleaned as described above, the chip 39 is then cleaned by a wire bonding apparatus.
Wire bonding for connecting the electrode 40 of the substrate 37 and the electrode 38 of the substrate 37 with a wire is performed.

【0020】このワークの電極のクリーニング装置によ
れば、次のようなすぐれた作用効果が得られる。すなわ
ち図3に示されるように、電極38,40の上面のみを
スポット的に且つ効果的にクリーニングでき、電極3
8,40以外の基板37やチップ39の表面を傷つける
ことがない。またクリーニングユニット1以外の大部分
の構成は、既存のワイヤボンディング装置と同じである
ので、ワイヤボンディング装置のホーンやキャピラリツ
ールなどのボンディングツールに替えてクリーニングユ
ニット1および吸引装置17などをセットすればよく、
設備コストを著しく低減できる。またワイヤボンディン
グのためのコンピュータのソフト、殊にプローブ部3を
所定の位置に移動させるためのテーブル装置31の制御
用のソフトを利用することも可能であり、この点からも
コストダウンを図れる。またこのワークの電極のクリー
ニング装置とワイヤボンディング装置を並設すれば、電
極38,40をクリーニングしてその表面の新鮮面を露
出した後、直ちにワイヤボンディングを行えるので、ク
リーニングからワイヤボンディングまでの時間間隔を短
くし、クリーニングによって露出した新鮮面が再汚染さ
れるのを解消できる。
According to the apparatus for cleaning an electrode of a work, the following excellent operational effects can be obtained. That is, as shown in FIG. 3, only the upper surfaces of the electrodes 38 and 40 can be spot-wise and effectively cleaned.
The surface of the substrate 37 and chip 39 other than 8, 40 is not damaged. Most of the configuration other than the cleaning unit 1 is the same as that of an existing wire bonding apparatus. Therefore, if the cleaning unit 1 and the suction device 17 are set in place of a bonding tool such as a horn or a capillary tool of the wire bonding apparatus. Often,
Equipment costs can be significantly reduced. It is also possible to use software of a computer for wire bonding, in particular, software for controlling the table device 31 for moving the probe unit 3 to a predetermined position, and the cost can be reduced from this point as well. If the electrode cleaning device for the workpiece and the wire bonding device are arranged in parallel, the wire bonding can be performed immediately after the electrodes 38 and 40 are cleaned and the fresh surface of the surface is exposed. By shortening the interval, the fresh surface exposed by the cleaning can be prevented from being recontaminated.

【0021】図5は本発明の第二実施例のワークの電極
のクリーニング装置の要部側面図である。アーム2’の
先端部に第2のプローブ5’が保持されており、第1の
リード線12を介して−電圧が付与される。また第1の
プローブ4’は第2のプローブ5’とは別体であって、
導電性金属板から成るリードフレーム42に接触してお
り、第2のリード線14を介して+電圧が付与される。
43はノズルであって、バキューム装置17に接続され
ており、リードフレーム42の電極41の上面付近の空
気を吸引する。テーブル装置31などの他の構成は第一
実施例と同じである。
FIG. 5 is a side view of a main part of an apparatus for cleaning a workpiece electrode according to a second embodiment of the present invention. A second probe 5 ′ is held at the tip of the arm 2 ′, and is applied with a negative voltage via the first lead wire 12. Also, the first probe 4 ′ is separate from the second probe 5 ′,
It is in contact with a lead frame 42 made of a conductive metal plate, and a positive voltage is applied through the second lead wire 14.
Reference numeral 43 denotes a nozzle, which is connected to the vacuum device 17 and sucks air near the upper surface of the electrode 41 of the lead frame 42. Other configurations such as the table device 31 are the same as those of the first embodiment.

【0022】したがってテーブル装置31を駆動して第
2のプローブ5’を電極41の上方へ位置させ、第1の
プローブ4’に+電圧を、また第2のプローブ5’に−
電圧を付与することにより、第2のプローブ5’と電極
41の間に放電Aを発生させて汚れKを除去し、除去さ
れた汚れ物質Kをノズル43に吸引する。また第2のプ
ローブ5’の高さを制御することにより、電極41との
距離Dを調整し、最適な放電距離を調整する。
Accordingly, the table device 31 is driven to position the second probe 5 'above the electrode 41, and to apply a positive voltage to the first probe 4' and a negative voltage to the second probe 5 '.
By applying a voltage, a discharge A is generated between the second probe 5 ′ and the electrode 41 to remove the stain K, and the removed stain substance K is sucked into the nozzle 43. Further, by controlling the height of the second probe 5 ', the distance D to the electrode 41 is adjusted, and the optimal discharge distance is adjusted.

【0023】本発明は様々な設計変更が可能であって、
例えば上記実施例ではプローブ部3を基板37やチップ
39などのワークに対してX方向やY方向に移動させて
いるが、位置決め部21をテーブル装置として基板37
やチップ39などのワークをプローブ部3に対してX方
向やY方向に移動させてもよく、あるいはプローブ部3
をX方向に移動させ、また基板37やチップ39などの
ワークをY方向に移動させてもよく、要はプローブ部3
を基板37やチップ39などのワークの所定の電極3
8,40,41の上方へ移動させればよい。また上記実
施例ではバキューム装置17により空気を吸入して電極
38,40,41から除去された汚れKを吸入している
が、還元ガスや不活性ガスなどのガスを吹出すことによ
り放電の熱による電極の酸化を防いでもよい。またワイ
ヤボンディングに先立って行う電極のクリーニングだけ
でなく、バンプ(突出電極)を基板やチップの電極にボ
ンディングするのに先立って行う電極のクリーニングな
どにも適用できる。
The present invention allows various design changes,
For example, in the above-described embodiment, the probe unit 3 is moved in the X direction or the Y direction with respect to the workpiece such as the substrate 37 and the chip 39.
The work such as the probe 39 and the tip 39 may be moved in the X direction or the Y direction with respect to the probe unit 3 or the probe unit 3
May be moved in the X direction, and a workpiece such as the substrate 37 or the chip 39 may be moved in the Y direction.
To a predetermined electrode 3 of a work such as a substrate 37 or a chip 39.
What is necessary is just to move above 8,40,41. In the above embodiment, the vacuum K is used to suck the air to suck the dirt K removed from the electrodes 38, 40, and 41. May prevent oxidation of the electrode. Further, the present invention can be applied not only to electrode cleaning performed before wire bonding but also to electrode cleaning performed before bonding a bump (protruding electrode) to a substrate or chip electrode.

【0024】[0024]

【発明の効果】以上説明したように本発明によれば、ワ
ークの電極のみをスポット的にクリーニングできるの
で、電極以外のワークの表面を傷つけることがない。ま
たクリーニングユニット以外の大部分の構成部品は既存
のワイヤボンディング装置をそのまま利用できるので、
設備コストの低減が可能となり、またワイヤボンディン
グ装置と並設することにより電極のクリーニングを行っ
てその新鮮面を露出させた後、直ちにワイヤボンディン
グを行えるので、クリーニングからワイヤボンディング
までのインターバル時間を短縮でき、単に作業能率のア
ップだけでなく、露出した新鮮面が空気に触れて酸化す
るなどして再び汚れが生じるのを解消できる。
As described above, according to the present invention, only the electrodes of the work can be spot-cleaned, so that the surface of the work other than the electrodes is not damaged. Most of the components other than the cleaning unit can use the existing wire bonding equipment as it is,
Equipment costs can be reduced, and wire cleaning can be performed immediately after the electrode is cleaned and its fresh surface is exposed by installing it in parallel with the wire bonding device, so the interval time from cleaning to wire bonding can be shortened. It is possible not only to improve the working efficiency but also to prevent the exposed fresh surface from being exposed to air and being oxidized, thereby causing the contamination again.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第一実施例のワークの電極のクリーニ
ング装置の側面図
FIG. 1 is a side view of an apparatus for cleaning a workpiece electrode according to a first embodiment of the present invention.

【図2】本発明の第一実施例のワークの電極のクリーニ
ング装置の要部断面図
FIG. 2 is a sectional view of a main part of the apparatus for cleaning an electrode of a work according to the first embodiment of the present invention;

【図3】本発明の第一実施例のワークの電極のクリーニ
ング装置の要部拡大断面図
FIG. 3 is an enlarged sectional view of a main part of an apparatus for cleaning a work electrode according to the first embodiment of the present invention;

【図4】本発明の第一実施例のワークの電極のクリーニ
ング装置の電圧付与回路のブロック図
FIG. 4 is a block diagram of a voltage applying circuit of the apparatus for cleaning an electrode of a work according to the first embodiment of the present invention;

【図5】本発明の第二実施例のワークの電極のクリーニ
ング装置の要部側面図
FIG. 5 is a side view of a main part of a device for cleaning an electrode of a work according to a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

4,4’ 第1のプローブ 5,5’ 第2のプローブ 17 バキューム装置(空気流手段) 18 電圧付与回路 25 フレーム 26,27 カムフォロア 28 カム 29 モータ 31 テーブル装置 37 基板(ワーク) 38,40,41 電極 39 チップ(ワーク) 42 リードフレーム(ワーク) 4, 4 'First probe 5, 5' Second probe 17 Vacuum device (air flow means) 18 Voltage applying circuit 25 Frame 26, 27 Cam follower 28 Cam 29 Motor 31 Table device 37 Substrate (work) 38, 40, 41 electrode 39 chip (work) 42 lead frame (work)

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】ワークを位置決めする位置決め部と、この
ワークの電極に電圧を付与する第1のプローブと、この
電極に接近してこの電極との間で放電を発生させる針状
電極である第2のプローブと、前記第1のプローブと前
記第2のプローブにそれぞれ電圧を付与する電圧付与手
段と、前記第1のプローブ及び又は第2のプローブを前
記ワークに対して相対的に移動させる移動手段とを備え
たことを特徴とするワークの電極のクリーニング装置。
1. A positioning part for positioning a work, a first probe for applying a voltage to an electrode of the work, and a needle-like member for approaching the electrode and generating a discharge between the electrode and the first probe.
A second probe which is an electrode, voltage applying means for applying a voltage to each of the first probe and the second probe, and a first probe and / or a second probe which are relative to the workpiece. And a moving means for moving the workpiece electrode.
【請求項2】前記第1のプローブがその外表面に導電膜
が形成された絶縁性の中空体であり、また前記第2のプ
ローブが前記第1のプローブの内部に配設され、且つ前
記第1のプローブを前記基板に接地させるために上下動
作を行わせる上下動手段を備えたことを特徴とする請求
項1記載のワークの電極のクリーニング装置。
2. The method according to claim 1, wherein the first probe is an insulating hollow body having a conductive film formed on an outer surface thereof, and the second probe is provided inside the first probe. 2. The apparatus according to claim 1, further comprising an up-and-down moving unit for performing an up-and-down operation to ground the first probe to the substrate.
【請求項3】前記ワークが導電板から成るリードフレー
ムであり、また前記第1のプローブと前記第2のプロー
ブが互いに別体であって、前記第1のプローブが前記リ
ードフレームに接触するよう配設されることを特徴とす
る請求項1記載のワークの電極のクリーニング装置。
3. The method according to claim 1, wherein the work is a lead frame made of a conductive plate, the first probe and the second probe are separate from each other, and the first probe contacts the lead frame. The apparatus for cleaning an electrode of a work according to claim 1, wherein the apparatus is disposed.
【請求項4】前記ワークの電極付近の空気を吸い込む
か、若しくは電極付近にガスを吹き付けるガス流手段を
備えたことを特徴とする請求項1記載のワークの電極の
クリーニング装置。
4. The apparatus for cleaning an electrode of a work according to claim 1, further comprising gas flow means for sucking air near the electrode of the work or blowing gas to the vicinity of the electrode.
【請求項5】針状電極である下端部を有する一方のプロ
ーブをワークに対して移動させながら、この一方のプロ
ーブをこのワークの電極に接近させ、この一方のプロー
ブに電圧を付与するとともに、他方のプローブによりこ
ワークの電極に電圧を付与することにより、この一方
のプローブとこの電極の間に電位差を生じさせてこの電
極との間に放電を発生させ、放電により生じたイオンを
この電極に衝突させることによりこの電極の表面をクリ
ーニングすることを特徴とするワークの電極のクリーニ
ング方法。
5. A method according to claim 1, further comprising: moving one probe having a lower end, which is a needle-like electrode, with respect to the work, bringing the one probe closer to an electrode of the work, applying a voltage to the one probe, By applying a voltage to the electrode of this work by the other probe, a potential difference is generated between this one probe and this electrode, and this voltage is applied.
A method for cleaning an electrode of a workpiece, comprising: generating a discharge between the electrode and a surface of the electrode by causing ions generated by the discharge to collide with the electrode.
JP06086666A 1994-04-25 1994-04-25 Apparatus and method for cleaning workpiece electrode Expired - Fee Related JP3123342B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP06086666A JP3123342B2 (en) 1994-04-25 1994-04-25 Apparatus and method for cleaning workpiece electrode
US08/427,218 US5676856A (en) 1994-04-25 1995-04-24 Electric discharge apparatus for cleaning electrode on workpiece and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06086666A JP3123342B2 (en) 1994-04-25 1994-04-25 Apparatus and method for cleaning workpiece electrode

Publications (2)

Publication Number Publication Date
JPH07297219A JPH07297219A (en) 1995-11-10
JP3123342B2 true JP3123342B2 (en) 2001-01-09

Family

ID=13893366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06086666A Expired - Fee Related JP3123342B2 (en) 1994-04-25 1994-04-25 Apparatus and method for cleaning workpiece electrode

Country Status (1)

Country Link
JP (1) JP3123342B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114392985B (en) * 2022-01-19 2023-10-10 南京理工大学 Method for cleaning near-local electrode of three-dimensional atomic probe by using Tesla coil

Also Published As

Publication number Publication date
JPH07297219A (en) 1995-11-10

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