JP3116792B2 - Plasma cleaning device and plasma cleaning method - Google Patents
Plasma cleaning device and plasma cleaning methodInfo
- Publication number
- JP3116792B2 JP3116792B2 JP07305432A JP30543295A JP3116792B2 JP 3116792 B2 JP3116792 B2 JP 3116792B2 JP 07305432 A JP07305432 A JP 07305432A JP 30543295 A JP30543295 A JP 30543295A JP 3116792 B2 JP3116792 B2 JP 3116792B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- chamber
- plasma cleaning
- shield
- bonding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85013—Plasma cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、混載方式の基板な
どの対象物をクリーニングするプラズマクリーニング装
置およびプラズマクリーニング方法に関するものであ
る。The present invention relates are those which relate to plasma cleaning apparatus and a plasma cleaning how to clean the object such as the substrate of the hybrid scheme.
【０００２】[0002]
【従来の技術】近年、一つの基板上に半田によって固着
される半田付け部品とベアチップとを搭載する混載方式
の基板が用いられるようになってきている。また、この
基板により、回路モジュールが製造されるようになって
きている。2. Description of the Related Art In recent years, a board of a mixed mounting type in which a solder component and a bare chip mounted on one board by soldering are mounted has been used. In addition, circuit modules are being manufactured using this substrate.
【０００３】このような基板に、半田付け部品とベアチ
ップとを搭載するにあたり、先にベアチップを搭載する
と、半田付け部品のための半田の塗布が面倒になる。こ
のため、このような基板では、まず基板に半田付け部品
を半田付けし、次に基板をプラズマクリーニングしてベ
アチップのために基板に形成された、ボンディングパッ
ドの汚れ（主として有機物）を取除き、そしてベアチッ
プを搭載するようになっている。[0003] When mounting a soldering component and a bare chip on such a substrate, if the bare chip is mounted first, it becomes troublesome to apply the solder for the soldering component. Therefore, in such a substrate, first, a soldering component is soldered to the substrate, and then the substrate is plasma-cleaned to remove dirt (mainly organic matter) on a bonding pad formed on the substrate for a bare chip. Then, a bare chip is mounted.
【０００４】[0004]
【発明が解決しようとする課題】さて、このようなプラ
ズマクリーニングを行う際の問題点を図７を参照しなが
ら説明する。図７において、１は混載方式の基板、２は
半田付け部品３用に形成された回路パターン、４は半田
付け部品３を回路パターン２に固着する半田である。A problem in performing such plasma cleaning will be described with reference to FIG. In FIG. 7, reference numeral 1 denotes a board of the mixed mounting type, 2 denotes a circuit pattern formed for the soldering component 3, and 4 denotes solder for fixing the soldering component 3 to the circuit pattern 2.
【０００５】また５はベアチップを搭載するために形成
されたベアチップ搭載部であり、ベアチップ搭載部５の
周囲には、ベアチップがワイヤで接合されるべきボンデ
ィングパッド６が形成されている。Reference numeral 5 denotes a bare chip mounting portion formed for mounting a bare chip. Around the bare chip mounting portion 5, a bonding pad 6 to which the bare chip is to be bonded by a wire is formed.
【０００６】そして、ボンディングパッド６の表面に付
着している有機物を除去するため、このプラズマクリー
ニングを行う。ところが、従来のプラズマクリーニング
装置によりこれを行うと、Ａｒ+,Ｈ+,ｅ-などの荷電粒
子がボンディングパッド６のみならず、半田４とも衝突
する。半田４は、Ｐｂ、Ｓｎの合金であり、このＰｂ、
Ｓｎが矢印Ｑ１、Ｑ２で示すように、荷電粒子が衝突す
ることによって飛散し、ボンディングパッド６に付着す
る現象が起る。[0006] This plasma cleaning is performed to remove organic substances adhering to the surface of the bonding pad 6. However, when this is performed by a conventional plasma cleaning apparatus, charged particles such as Ar + , H + , and e − collide not only with the bonding pad 6 but also with the solder 4. The solder 4 is an alloy of Pb and Sn.
As shown by arrows Q1 and Q2, Sn scatters due to collision of charged particles, and a phenomenon occurs in which the particles adhere to the bonding pad 6.
【０００７】このとき、飛散したＰｂ、Ｓｎがボンディ
ングパッド６に付着する量よりも、矢印Ｑ３で示すよう
に、荷電粒子がボンディングパッド６の付着物を取除く
量が多ければ、ボンディングパッド６は清浄になるので
あるが、実際には、時間の経過とともに、ボンディング
パッド６の付着物が増えてゆく傾向にあり、ボンディン
グパッド６は、清浄にはならない。At this time, as shown by an arrow Q3, if the amount of the charged particles removing the adhered matter on the bonding pad 6 is larger than the amount of the scattered Pb and Sn adhered to the bonding pad 6, the bonding pad 6 becomes Although it becomes clean, in practice, the amount of deposits on the bonding pad 6 tends to increase over time, and the bonding pad 6 does not become clean.
【０００８】そこで本発明は、半田から飛散するＰｂ、
Ｓｎ等がボンディングパッドに付着せずボンディングパ
ッドを効果的に清浄化できるプラズマクリーニング装置
およびプラズマクリーニング方法を提供することを目的
とする。Accordingly, the present invention provides a method for producing Pb scattered from solder,
Plasma cleaning device capable of effectively cleaning the bonding pad without Sn etc. adhering to the bonding pad
And a plasma cleaning method .
【０００９】[0009]
【課題を解決するための手段】本発明のプラズマクリー
ニング装置は、チャンバーと、チャンバー内に酸素ガス
を含む反応ガスを供給する反応ガス供給部と、チャンバ
ー外へ排気を行う排気部と、チャンバー内に設けられ、
電気的に接地される第１電極と、第１電極に対面させて
チャンバー内に設けられ、高周波電圧が印加される第２
電極と、少なくともクリーニングを行う際、第２電極に
電気的に接続され、かつ第１電極と第２電極の間に配置
される対象物を覆うシールドとを備える。 Flop plasma cleaning device of the present invention SUMMARY OF THE INVENTION comprises a chamber, an exhaust unit for performing a reaction gas supply unit for supplying a reaction gas containing oxygen gas into the chamber, an exhaust to the outside the chamber, the chamber Provided in the
A first electrode electrically grounded, is provided in the <br/> chamber so as to face the first electrode, the high frequency voltage is applied to 2
An electrode and a shield that is electrically connected to the second electrode at least when cleaning is performed and covers an object that is disposed between the first electrode and the second electrode.
【００１０】[0010]
【発明の実施の形態】請求項１記載の構成により、対象
物として混載方式の基板上に半田付け部品が半田付けさ
れたものを、チャンバー内に収納する。そして、この対
象物の上方をシールドで覆う。ここで、シールドと第２
電極は、少なくともクリーニングを行う際、電気的に接
続され、同電位になっている。According to the first aspect of the present invention, an object in which a soldering component is soldered on a board of a mixed mounting type as an object is housed in a chamber. Then, the upper part of the object is covered with a shield. Where the shield and the second
The electrodes are electrically connected at least at the time of cleaning, and are at the same potential.
【００１１】そして、酸素ガスによる酸素プラズマを発
生させる。この酸素プラズマ中には、酸素イオン、電子
などの荷電粒子と、電気的に中性の酸素ラジカルが存在
する。Then, oxygen plasma is generated by oxygen gas. The oxygen plasma contains charged particles such as oxygen ions and electrons and electrically neutral oxygen radicals.
【００１２】そして、第１電極と第２電極との電位差に
よって、荷電粒子は、加速され、シールドに衝突する。
しかしながら、シールドと第２電極との間には、電位差
がないので、荷電粒子は、シールド内、即ち対象物の周
囲には、到来しない。The charged particles are accelerated by the potential difference between the first electrode and the second electrode, and collide with the shield.
However, since there is no potential difference between the shield and the second electrode, the charged particles do not arrive inside the shield, that is, around the object.
【００１３】したがって、対象物の周囲には、浮遊して
いる酸素ラジカルのみが、到来することになる。これに
よって、半田に荷電粒子が衝突することはないので、半
田のＰｂ、Ｓｎ等が飛散してボンディングパッドを汚染
することはない。また、ボンディングパッドには、酸素
ラジカルが衝突する。この衝突によって、ボンディング
パッドに付着していた有機物は、二酸化炭素と水蒸気に
分解され、これら二酸化炭素、水蒸気は気化するので、
ボンディングパッドが清浄になる。Therefore, only floating oxygen radicals arrive around the object. As a result, the charged particles do not collide with the solder, so that Pb, Sn, etc. of the solder do not scatter and contaminate the bonding pad. Further, oxygen radicals collide with the bonding pad. By this collision, the organic matter attached to the bonding pad is decomposed into carbon dioxide and water vapor, and these carbon dioxide and water vapor are vaporized.
The bonding pad becomes clean.
【００１４】次に図面を参照しながら、本発明の実施の
形態を説明する。図１は、本発明の一実施の形態におけ
るプラズマクリーニング装置の断面図である。なお図
中、従来の構成を示す図７と同様の構成要素について
は、同一符号を付すことにより説明を省略する。Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a plasma cleaning apparatus according to one embodiment of the present invention. In the drawing, the same components as those in FIG. 7 showing the conventional configuration are denoted by the same reference numerals, and description thereof will be omitted.
【００１５】図１において、１０は減圧雰囲気を形成す
るためのチャンバーであり、チャンバー１０の片側に
は、出入口１０ａが設けられている。１１は出入口１０
ａを開閉する扉であり、扉１１はシリンダ１２が駆動さ
れることにより昇降し、出入口１０ａを閉鎖／解放する
ものである。In FIG. 1, reference numeral 10 denotes a chamber for forming a reduced-pressure atmosphere, and an entrance 10a is provided on one side of the chamber 10. 11 is the doorway 10
The door 11 is moved up and down by driving the cylinder 12, and closes / opens the doorway 10a.
【００１６】出入口１０ａのレベルにおいて、コンベア
１３がチャンバー１０を、図示しない駆動手段によっ
て、出入りするようになっている。そして、コンベア１
３上には、導電体からなるトレイ１４が載置され、トレ
イ１４の両端部は上方に起立する起立部となっている。At the level of the entrance 10a, the conveyor 13 enters and exits the chamber 10 by driving means (not shown). And conveyor 1
A tray 14 made of a conductive material is placed on 3, and both ends of the tray 14 are upright portions that rise upward.
【００１７】トレイ１４の上面には、基板１が載置され
ている。このチャンバー１０内に基板１が搬入される際
には、既に基板１には半田付け部品３が半田４によって
半田付けされている。On the upper surface of the tray 14, the substrate 1 is placed. When the substrate 1 is carried into the chamber 10, the soldering components 3 are already soldered to the substrate 1 by the solder 4.
【００１８】１５はチャンバー１０の上部に水平に保持
され、かつ電気的に接地される第１電極である。１６は
第１電極１５と平行に対面し、高周波電源１７により高
周波電圧が印加される第２電極である。第２電極１６の
内部には、上述したような有機物との分解反応を促進す
るために、ヒータ１８を設けて第２電極１６及び基板１
の温度を高くするようになっている。Reference numeral 15 denotes a first electrode which is horizontally held above the chamber 10 and is electrically grounded. Reference numeral 16 denotes a second electrode facing the first electrode 15 in parallel and receiving a high-frequency voltage from a high-frequency power supply 17. A heater 18 is provided inside the second electrode 16 in order to promote the decomposition reaction with the organic substance as described above.
Temperature is set to be high.
【００１９】１９は導電体からなり第２電極１６の中央
から下向きに突設された昇降ロッドである。チャンバー
１０と昇降ロッド１９との間には、絶縁体からなるリン
グ２１が介装され、チャンバー１０と第２電極１６と
は、電気的に絶縁されている。Reference numeral 19 denotes an elevating rod which is made of a conductor and protrudes downward from the center of the second electrode 16. A ring 21 made of an insulator is interposed between the chamber 10 and the lifting rod 19, and the chamber 10 and the second electrode 16 are electrically insulated.
【００２０】２０は昇降ロッド１９の下端部、即ち第２
電極１６を昇降させるためのシリンダである。Reference numeral 20 denotes a lower end of the lifting rod 19, that is, a second
This is a cylinder for raising and lowering the electrode 16.
【００２１】２２は、酸素ガスを含む反応ガスをチャン
バー１０内に供給する反応ガス供給部、２３はチャンバ
ー１０内から排気を行う排気部である。２４はチャンバ
ー１０のほぼ中段の第１電極１５と第２電極１６の間に
これらと平行に設けられ、導電体からなる網状のシール
ドである。このシールド２４は、第１電極１５と第２電
極１６の間に配置された基板１の上方を覆う。 Reference numeral 22 denotes a reaction gas supply unit for supplying a reaction gas containing oxygen gas into the chamber 10, and reference numeral 23 denotes an exhaust unit for exhausting gas from the inside of the chamber 10. Reference numeral 24 denotes a portion between the first electrode 15 and the second electrode 16 substantially in the middle of the chamber 10.
A net-shaped shield made of a conductor is provided in parallel with these . This shield 24 is connected to the first electrode 15 and the second electrode.
It covers above the substrate 1 arranged between the poles 16.
【００２２】次に図２から図４を参照しながら、本形態
のプラズマクリーニング装置の動作について説明する。Next, the operation of the plasma cleaning apparatus of the present embodiment will be described with reference to FIGS.
【００２３】図１の実線で示すように、基板１を保持す
るトレイ１４がコンベア１３が駆動することによりチャ
ンバー１０内に収納され、コンベア１３がチャンバー１
０外へ移動し、扉１１で出入口１０ａが閉じられる。As shown by the solid line in FIG. 1, the tray 14 holding the substrate 1 is housed in the chamber 10 by driving the conveyor 13, and the conveyor 13 is
Then, the door 10 moves out of the door 10 and the door 10 a is closed by the door 11.
【００２４】そして、シリンダ２０を駆動し、図２に示
すように、昇降ロッド１９及び第２電極１６を上昇させ
る。すると、トレイ１４が第２電極１６の上面に接触
し、さらに上昇を続けることによって、トレイ１４の起
立部１４ａがシールド２４と密着する。これにより、シ
ールド２４が第２電極１６と同電位になる（図３）。Then, the cylinder 20 is driven to raise the lifting rod 19 and the second electrode 16 as shown in FIG. Then, the tray 14 comes into contact with the upper surface of the second electrode 16 and continues to rise, so that the rising portion 14 a of the tray 14 comes into close contact with the shield 24. Thereby, the shield 24 has the same potential as the second electrode 16 (FIG. 3).
【００２５】次いで、排気部２３を駆動することによ
り、チャンバー１０内を減圧し、反応ガス供給部２２を
駆動して酸素ガスを含む反応ガスをチャンバー１０内に
導入する。そして、酸素ガスの圧力が所定値となったと
ころで、高周波電源１７を駆動し、第２電極１６に高周
波電圧を印加する。このとき、シールド２４は第２電極
１６と同電位である。Next, the inside of the chamber 10 is depressurized by driving the exhaust unit 23, and the reaction gas supply unit 22 is driven to introduce a reaction gas containing oxygen gas into the chamber 10. When the pressure of the oxygen gas reaches a predetermined value, the high-frequency power supply 17 is driven to apply a high-frequency voltage to the second electrode 16. At this time, the shield 24 has the same potential as the second electrode 16.
【００２６】すると、第１電極１５と第２電極１６との
間に、酸素プラズマが発生する。この酸素プラズマの中
には、酸素イオン、電子などの荷電粒子と、電気的に中
性の酸素ラジカルとが存在する。Then, oxygen plasma is generated between the first electrode 15 and the second electrode 16. This oxygen plasma contains charged particles such as oxygen ions and electrons and electrically neutral oxygen radicals.
【００２７】そして、図４に示すように、第１電極１５
と第２電極１６との電位差により、荷電粒子は加速され
シールド２４へ達するが、第２電極１６とシールド２４
が同電位であるため、荷電粒子はシールド２４内に進入
しない。即ち、シールド２４の内部には、酸素ラジカル
のみが進入する。Then, as shown in FIG.
The charged particles are accelerated by the potential difference between the first electrode 16 and the second electrode 16 and reach the shield 24.
Are at the same potential, the charged particles do not enter the shield 24. That is, only oxygen radicals enter the inside of the shield 24.
【００２８】この酸素ラジカルにより、ボンディングパ
ッド６に付着している有機物は、分解されて気化し、排
気部２３によりチャンバー１０外へ排出され、ボンディ
ングパッド６は清浄になる。The organic substances adhering to the bonding pad 6 are decomposed and vaporized by the oxygen radicals, discharged to the outside of the chamber 10 by the exhaust unit 23, and the bonding pad 6 is cleaned.
【００２９】またこのとき、ヒータ１８を駆動して、第
２電極１６、即ち基板１の温度を高めて、上述した分解
を促進し、短時間で効果的なクリーニングを行うことが
できる。At this time, the heater 18 is driven to increase the temperature of the second electrode 16, ie, the substrate 1, to promote the above-described decomposition, and to perform effective cleaning in a short time.
【００３０】なお図３において、２５はコンベア１３が
トレイ１４をチャンバー１０内に搬入した際に、トレイ
１４の下部を支持するガイドである。In FIG. 3, reference numeral 25 denotes a guide for supporting the lower portion of the tray 14 when the conveyor 13 carries the tray 14 into the chamber 10.
【００３１】次に、上述したプラズマクリーニング方法
を用いた、回路モジュールの製造方法について説明す
る。Next, a method of manufacturing a circuit module using the above-described plasma cleaning method will be described.
【００３２】さて、図５（ａ），（ｂ）は、本発明の一
実施の形態における回路モジュールの製造方法のフロー
チャートである。FIGS. 5A and 5B are flowcharts of a method for manufacturing a circuit module according to an embodiment of the present invention.
【００３３】図５（ａ）に沿って、図６を参照しなが
ら、回路モジュールの製造方法の各過程について説明す
る。まず図６（ａ）に示すように、基板１の回路パター
ン２上にスクリーン印刷法によって、半田４を塗布し、
塗布した半田４の上に半田付け部品３を搭載する（矢印
Ｎ１）。Each step of the circuit module manufacturing method will be described with reference to FIG. 5A and FIG. First, as shown in FIG. 6A, a solder 4 is applied on a circuit pattern 2 of a substrate 1 by a screen printing method.
The soldering component 3 is mounted on the applied solder 4 (arrow N1).
【００３４】次いで、基板１をリフロー装置などの加熱
装置に入れ、半田４を溶融させた後固化させて、図６
（ｂ）に示すように、半田付け部品３を回路パターン２
に半田付けする。Next, the substrate 1 is placed in a heating device such as a reflow device, and the solder 4 is melted and solidified.
As shown in (b), the soldering component 3 is
Solder to
【００３５】次に、基板１を図１から図４に示した流れ
で、プラズマクリーニングする。これにより、ボンディ
ングパッド６に付着した有機物を取除くことができ、半
田４のＰｂ，Ｓｎなどがボンディングパッド６に付着し
ないようにすることができる。Next, the substrate 1 is subjected to plasma cleaning according to the flow shown in FIGS. Thus, the organic substances attached to the bonding pad 6 can be removed, and Pb, Sn, etc. of the solder 4 can be prevented from adhering to the bonding pad 6.
【００３６】図６（ｃ）に示すように、ベアチップ搭載
部５に接着剤２６を塗布した後、接着剤２６上にベアチ
ップ２７を搭載する。そして、基板１をキュア装置など
に送り、接着剤２６を硬化させることにより、ベアチッ
プ搭載部５にベアチップ２７を固着する。As shown in FIG. 6C, after the adhesive 26 is applied to the bare chip mounting portion 5, the bare chip 27 is mounted on the adhesive 26. Then, the substrate 1 is sent to a curing device or the like, and the adhesive 26 is cured to fix the bare chip 27 to the bare chip mounting portion 5.
【００３７】次に、図６（ｄ）に示すように、ベアチッ
プ２７とボンディングパッド６をワイヤ２８で接合し、
ベアチップ２７の周囲を、樹脂２９で封止することによ
って、回路モジュールを得ることができる。Next, as shown in FIG. 6D, the bare chip 27 and the bonding pad 6 are joined by a wire 28.
By sealing the periphery of the bare chip 27 with the resin 29, a circuit module can be obtained.
【００３８】また図５（ｂ）に示した製造方法は、図５
（ａ）の手順を若干変更したものである。即ち、図５
（ｂ）によると、プラズマクリーニングを半田付け部品
３の固着工程（図６（ｂ））とベアチップ２６の実装工
程（図６（ｃ））との間に行うのではなく、ベアチップ
２７の固着工程（図６（ｃ））がすんだ直後にプラズマ
クリーニングを行い、クリーニングの直後に清浄になっ
たばかりのボンディングパッド６を用いてワイヤボンデ
ィングを行うようにしている。そのほかは、図５（ａ）
と同様である。The manufacturing method shown in FIG.
This is a slightly modified procedure of (a). That is, FIG.
According to (b), the plasma cleaning is not performed between the step of fixing the soldered component 3 (FIG. 6B) and the step of mounting the bare chip 26 (FIG. 6C), but the step of fixing the bare chip 27. Plasma cleaning is performed immediately after the completion of (FIG. 6C), and wire bonding is performed using the newly-cleaned bonding pad 6 immediately after the cleaning. Other than that, FIG.
Is the same as
【００３９】[0039]
【発明の効果】本発明によれば、混載方式の基板などに
おいて、先きに半田付けされた半田付け部品の半田に荷
電粒子が衝突して半田の成分が飛散し、ボンディングパ
ッドに二次的に付着するのを防止しながら、効果的にボ
ンディングパッドのクリーニングを行うことができる。 According to the present invention , the load of the solder of the soldered component previously soldered on the board of the mixed mounting type or the like can be obtained.
Electron particles collide and the components of the solder scatter, causing the bonding
While preventing the adhesion of secondarily the head, effectively Bo
The cleaning of the binding pad can be performed.
【図１】本発明の一実施の形態におけるプラズマクリー
ニング装置の断面図FIG. 1 is a sectional view of a plasma cleaning apparatus according to an embodiment of the present invention.
【図２】本発明の一実施の形態におけるプラズマクリー
ニング装置の動作説明図FIG. 2 is a diagram illustrating the operation of the plasma cleaning apparatus according to the embodiment of the present invention;
【図３】本発明の一実施の形態におけるプラズマクリー
ニング装置の動作説明図FIG. 3 is a diagram illustrating the operation of the plasma cleaning apparatus according to the embodiment of the present invention.
【図４】本発明の一実施の形態におけるプラズマクリー
ニング装置の動作説明図FIG. 4 is a diagram illustrating the operation of the plasma cleaning apparatus according to the embodiment of the present invention.
【図５】（ａ）本発明の一実施の形態における回路モジ
ュールの製造方法のフローチャート （ｂ）本発明の一実施の形態における回路モジュールの
製造方法のフローチャート5A is a flowchart of a method for manufacturing a circuit module according to one embodiment of the present invention; FIG. 5B is a flowchart of a method for manufacturing a circuit module according to one embodiment of the present invention;
【図６】（ａ）本発明の一実施の形態における回路モジ
ュールの製造方法の工程説明図 （ｂ）本発明の一実施の形態における回路モジュールの
製造方法の工程説明図 （ｃ）本発明の一実施の形態における回路モジュールの
製造方法の工程説明図 （ｄ）本発明の一実施の形態における回路モジュールの
製造方法の工程説明図 （ｅ）本発明の一実施の形態における回路モジュールの
製造方法の工程説明図FIG. 6A is an explanatory view of a process of a method of manufacturing a circuit module according to an embodiment of the present invention. FIG. 6B is an explanatory view of a process of a method of manufacturing a circuit module according to an embodiment of the present invention. Process description diagram of a method of manufacturing a circuit module according to one embodiment (d) Process description diagram of a method of manufacturing a circuit module according to one embodiment of the present invention (e) Method of manufacturing a circuit module according to one embodiment of the present invention Process description diagram
【図７】従来のプラズマクリーニング方法の現象説明図FIG. 7 is an explanatory view of a phenomenon of a conventional plasma cleaning method.
１ 基板 １０ チャンバー １５ 第１電極 １６ 第２電極 １８ ヒータ ２２ 反応ガス供給部 ２３ 排気部 ２４ シールド DESCRIPTION OF SYMBOLS 1 Substrate 10 Chamber 15 1st electrode 16 2nd electrode 18 Heater 22 Reaction gas supply part 23 Exhaust part 24 Shield
Claims (5)
スを含む反応ガスを供給する反応ガス供給部と、前記チ
ャンバー外へ排気を行う排気部と、前記チャンバー内に
設けられ、電気的に接地される第１電極と、前記第１電
極に対面させて前記チャンバー内に設けられ、高周波電
圧が印加される第２電極と、少なくともクリーニングを
行う際、前記第２電極に電気的に接続され、かつ前記第
１電極と前記第２電極の間に配置される対象物の上方を
覆うシールドとを備えることを特徴とするプラズマクリ
ーニング装置。1. A chamber, a reaction gas supply unit for supplying a reaction gas containing an oxygen gas into the chamber, an exhaust unit for exhausting the gas to the outside of the chamber, and an electric grounding unit provided in the chamber. that a first electrode provided in said chamber so as to face the first electrode, a second electrode high-frequency voltage is applied, when performing at least cleaning, it is electrically connected to the second electrode, And the said
Above an object disposed between the first electrode and the second electrode
A plasma cleaning apparatus, comprising: a covering shield.
ることを特徴とする請求項１記載のプラズマクリーニン
グ装置。2. The plasma cleaning apparatus according to claim 1, wherein a heater is provided on said second electrode.
保持させ、クリーニングを行う際、前記トレイによって
前記第２電極と前記シールドとを導通させることを特徴
とする請求項１記載のプラズマクリーニング装置。The tray consists wherein conductor is held objects, when performing the cleaning, according to claim 1, wherein the pre-SL tray, characterized in that to conduct and said shield and said second electrode Plasma cleaning device.
し、対象物を前記第１電極に対面する第２電極上に支持
するステップと、 前記第２電極上に支持される対象物をシールドで覆うと
ともに、前記シールドを前記第２電極と電気的に接続し
同電位とするステップと、 前記チャンバー内に酸素ガスを供給するとともに、前記
第２電極に高周波電圧を印加するステップとを含むこと
を特徴とするプラズマクリーニング方法。Wherein electrically grounded first electrode in the chamber, comprising the steps of: supporting the object on the second electrode facing said first electrode, the object to be supported on said second electrode Electrically covering the shield with the second electrode to have the same potential, supplying oxygen gas into the chamber, and applying a high-frequency voltage to the second electrode And a plasma cleaning method.
されており、このトレイにより前記シールドと前記第２
電極を導通させることを特徴とする請求項４記載のプラ
ズマクリーニング方法。 5. An object placed on a tray made of a conductive material.
The shield and the second
5. The plug according to claim 4, wherein the electrodes are electrically connected.
Zuma cleaning method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07305432A JP3116792B2 (en) | 1995-11-24 | 1995-11-24 | Plasma cleaning device and plasma cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07305432A JP3116792B2 (en) | 1995-11-24 | 1995-11-24 | Plasma cleaning device and plasma cleaning method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12962599A Division JP3189828B2 (en) | 1995-11-24 | 1999-05-11 | Circuit module manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09148095A JPH09148095A (en) | 1997-06-06 |
| JP3116792B2 true JP3116792B2 (en) | 2000-12-11 |
Family
ID=17945070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07305432A Expired - Fee Related JP3116792B2 (en) | 1995-11-24 | 1995-11-24 | Plasma cleaning device and plasma cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3116792B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001205211A (en) * | 2000-01-28 | 2001-07-31 | Sanyo Electric Co Ltd | Plasma cleaning apparatus |
| KR20020061136A (en) * | 2001-01-16 | 2002-07-23 | 주식회사 한솔 | a manufacturing of electrolytic arrangement for see water technigue |
| KR101565535B1 (en) * | 2013-12-06 | 2015-11-06 | 피에스케이 주식회사 | Substrate treating apparatus and substrate treating method |
| CN113518510B (en) * | 2020-04-10 | 2022-10-11 | 南通深南电路有限公司 | PCB glue removing device and method |
-
1995
- 1995-11-24 JP JP07305432A patent/JP3116792B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09148095A (en) | 1997-06-06 |
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