JPS63170930A - Assembly method for semiconductor device - Google Patents
Assembly method for semiconductor deviceInfo
- Publication number
- JPS63170930A JPS63170930A JP273387A JP273387A JPS63170930A JP S63170930 A JPS63170930 A JP S63170930A JP 273387 A JP273387 A JP 273387A JP 273387 A JP273387 A JP 273387A JP S63170930 A JPS63170930 A JP S63170930A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- bonding
- wire
- silver paste
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 239000008188 pellet Substances 0.000 claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052709 silver Inorganic materials 0.000 abstract description 10
- 239000004332 silver Substances 0.000 abstract description 10
- 238000004299 exfoliation Methods 0.000 abstract 2
- 239000000356 contaminant Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000002761 deinking Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体ベレットヲパッケージに搭載するダイボ
ンディング工程において、特に樹脂ペーストで接着させ
る樹脂接着法を用いた組立方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an assembly method using a resin bonding method in which a semiconductor pellet is bonded with a resin paste in a die bonding process for mounting a semiconductor pellet on a package.
ダイボンディング工程の接着には、エポキシ樹脂中にＡ
ｇ粉末を配合した銀ペーストなどによる樹脂接着法が、
しばしば用いら扛ている。リードフレームに半導体ペレ
ット（以下、ペレットと略称する）を接着させる例で説
明すると、第２図（ａＪに示すように、リードフレーム
２のアイランド（取付は部）９に銀ペースト８を塗布し
てから、第２図（ｂｌに示すように、ペレット４をコレ
ット１０で真空吸着して保持して、銀ペースト８上に取
りつけた後、第２図（ｃｌのベーク炉１２に入れて、Ｎ
ｚガス５を流しながら１５０〜２００Ｃでベークして銀
ペースト８を硬化嘔せることで完全にペレット４を固着
させる。そしてその後でワイヤボンディングを行なって
から洗浄して、組立を完了する。For adhesion in the die bonding process, A is added to the epoxy resin.
The resin adhesion method using silver paste containing g powder, etc.
It is often neglected. To explain an example of bonding a semiconductor pellet (hereinafter referred to as pellet) to a lead frame, as shown in Fig. 2 (aJ), silver paste 8 is applied to the island (attachment part) 9 of the lead frame 2. As shown in FIG. 2 (bl), the pellet 4 is vacuum-adsorbed and held by the collet 10 and attached to the silver paste 8, and then put into the baking furnace 12 of FIG.
The pellets 4 are completely fixed by baking at 150 to 200 C while flowing the Z gas 5 to harden the silver paste 8. After that, wire bonding is performed and cleaning is performed to complete the assembly.
上記の従来方法では、ベーキングの際に樹脂ペーストか
ら各種ガスが発生する。そのため、発生ガスにより、ペ
レットのポンディングパッドを汚染し、次工程のワイヤ
ボンディングのときに、ワイヤの接合強度が弱くなり簡
単に剥離するおそれも生ずる。またリードフレームモ汚
染嘔れるので、この部分のワイヤ接合強度も問題になる
。ワイヤボンディング後洗浄するがペレット表面に付着
した残存物は強固で、取シのそくことが出来す、特性劣
化が生ずることもある。In the conventional method described above, various gases are generated from the resin paste during baking. Therefore, the generated gas contaminates the bonding pad of the pellet, and during the next step of wire bonding, the bonding strength of the wire may be weakened and the bonding pad may easily peel off. Also, since the lead frame is contaminated, the strength of the wire bonding in this area also becomes a problem. Although it is cleaned after wire bonding, the residue adhering to the pellet surface is strong and can be removed, which may result in deterioration of characteristics.
本発明の方法は、上記問題点を解決する目的でな式れた
ものであって、従来の方法で半導体ペレットを取付部に
樹脂ペーストで接着・ベーキングして樹脂ペーストを硬
化させた後、さらにＮ２プラズマ剥離を行なうようにし
たものである。The method of the present invention was developed for the purpose of solving the above-mentioned problems, and after bonding and baking a semiconductor pellet to a mounting part with a resin paste using a conventional method and curing the resin paste, N2 plasma stripping is performed.
以下、本発明の一実施例を、図面を参照して説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図（ａｌは、ダイボンディングからワイヤボンディ
ング工程までのフローを示すものである。ダイボンディ
ングおよびベークを行なった後、中間にプラズマ剥離を
行なってからワイヤポンディング工程に移す。ボンディ
ングおよびベークまでの工程はリードフレームを用いる
場合は、第２図で説明したように、リードフレーム２の
アイランド９に銀ペースト８を塗布してから、ペレット
４をコレット１０で真空吸着保持して銀ペースト８上に
取りつけた後、ベーク炉１２中でベークして銀ペースト
８を硬化させる。銀ペースト８の硬化の際に発生したガ
スがペレット４．リードフレーム２の表面に有機性の付
着物を形成する。Figure 1 (al) shows the flow from die bonding to wire bonding process. After die bonding and baking, plasma stripping is performed in the middle and then the wire bonding process is started. Until bonding and baking When a lead frame is used, the process is as explained in FIG. After being attached to the lead frame 2, the silver paste 8 is baked in the baking oven 12 to harden it.The gas generated during the hardening of the silver paste 8 forms an organic deposit on the surface of the pellet 4.lead frame 2.
次に第１図中）のプラズマ剥離装置によって、プラズマ
剥離を行なう。この装置の石英室１内に、前記ベークま
での工程の終了したリードフレーム２をキャリア３に数
個積み重ねておく。Next, plasma peeling is performed using a plasma peeling apparatus (in FIG. 1). In the quartz chamber 1 of this device, several lead frames 2 that have undergone the process up to baking are stacked on a carrier 3.
セしてＮ！ガス４を流入し、ポンプで排出し、常にＮ！
フローを形成して、高周波電源６を石英室ｌの壁面に設
けた電極７ａに印加し、対向する電極７ｂ間にプラズマ
放電を行なわせる。これによって、ペレット４．リード
フレーム２の表面付着物は剥離飛散して清浄化される。Se and N! Gas 4 flows in, pumps out, and always N!
A flow is formed, and the high frequency power source 6 is applied to the electrode 7a provided on the wall of the quartz chamber l, causing plasma discharge to occur between the opposing electrodes 7b. This produces pellets 4. The surface deposits of the lead frame 2 are peeled off and scattered to be cleaned.
この工程後、ワイヤボンディングを行なう。After this step, wire bonding is performed.
以上、説明したように、本発明はダイボンデインクから
ワイヤボンディングまでの工程の途中に、Ｎ２プラズマ
剥離工程を挿入し、樹脂ペーストを熱硬化したときに発
生するガスによるペレット・リードフレーム表面の有機
物汚染を完全に取りのぞくことができる。これによって
、ワイヤボンディングによるワイヤの接合が良好に行な
われ、その接合性が向上する。またペレット表面の汚染
防止にもなり歩留が向上する。As explained above, the present invention inserts an N2 plasma stripping process in the middle of the process from die bond deinking to wire bonding, and removes organic substances on the surface of pellets and lead frames due to the gas generated when the resin paste is thermally cured. Contamination can be completely removed. Thereby, the wires can be bonded well by wire bonding, and the bonding properties thereof are improved. It also prevents contamination of the pellet surface and improves yield.
第１図は、本発明の一実施例の（ａｔ工程フロー図およ
び（ｂｌ Ｎｚプラズマ剥離装置の断面図、第２図はダ
イボンディングからベークまでの工程を示す図である。
１・・・石英室、 ２・・・リードフレーム、
３・・・キャリア、 ４・・・ペレット、５・・
、Ｎ２、 ６・・・高周波電源１７ａ、７ｂ・
・・電極、 ８・・・銀ペースト、９・・・アイラン
ド、１０・・・コレット、１１・・・ベーク炉。
第１図
ｔａ＞FIG. 1 is a process flow diagram of an embodiment of the present invention and a sectional view of a Nz plasma stripping apparatus, and FIG. 2 is a diagram showing the steps from die bonding to baking. 1... Quartz Chamber, 2...Lead frame,
3...Carrier, 4...Pellet, 5...
, N2, 6...High frequency power supply 17a, 7b.
...Electrode, 8...Silver paste, 9...Island, 10...Collet, 11...Bake oven. Figure 1 ta>
Claims (1)
ボンディング工程で、半導体ペレットを取付部に樹脂ペ
ーストで接着・ベーキングして樹脂ペーストを硬化させ
た後、Ｎ＿２プラズマ剥離を行なうことを特徴とする半
導体装置の組立方法。A semiconductor device characterized in that in a die bonding process in which a semiconductor pellet is mounted on a package and bonded, the semiconductor pellet is bonded to a mounting part with a resin paste, baked, the resin paste is cured, and then N_2 plasma peeling is performed. Assembly method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP273387A JPS63170930A (en) | 1987-01-08 | 1987-01-08 | Assembly method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP273387A JPS63170930A (en) | 1987-01-08 | 1987-01-08 | Assembly method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63170930A true JPS63170930A (en) | 1988-07-14 |
Family
ID=11537525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP273387A Pending JPS63170930A (en) | 1987-01-08 | 1987-01-08 | Assembly method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63170930A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5147822A (en) * | 1988-08-26 | 1992-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method for improving a package of a semiconductor device |
| US6756670B1 (en) | 1988-08-26 | 2004-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and its manufacturing method |
-
1987
- 1987-01-08 JP JP273387A patent/JPS63170930A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5147822A (en) * | 1988-08-26 | 1992-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method for improving a package of a semiconductor device |
| US6756670B1 (en) | 1988-08-26 | 2004-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6437412B1 (en) | Surface acoustic wave device having a package including a conductive cap that is coated with sealing material | |
| JP2006093669A (en) | Method and device for removing material from substrate surface | |
| JPS6056431B2 (en) | plasma etching equipment | |
| JPH11514801A (en) | Glass / metal package and method of manufacturing the same | |
| JP2000082723A (en) | Functional emenet and board for mounting functional element as well as their connection method | |
| JPS63170930A (en) | Assembly method for semiconductor device | |
| JP3678048B2 (en) | Solder precoat method and solder precoat substrate | |
| JP2006295186A (en) | Integrated circuit packaging process through non-tape die attaching method | |
| JP3462479B2 (en) | Method and apparatus for sealing ceramic package of surface acoustic wave filter | |
| WO2002015258A1 (en) | Mounting method | |
| JPH10107062A (en) | Plasma cleaning device, plasma cleaning method and manufacture of circuit module | |
| JP3116792B2 (en) | Plasma cleaning device and plasma cleaning method | |
| JP3189828B2 (en) | Circuit module manufacturing method | |
| JP2008001101A (en) | Removing method of surplus amount of forming material from substrate | |
| JPH06112390A (en) | Lead frame | |
| JPH10340914A (en) | Manufacture of semiconductor device | |
| DE69122699T2 (en) | Sealing procedure for a lid of a hollow plastic package | |
| JPS5923534A (en) | Manufacture of semiconductor device | |
| JPS5957438A (en) | Assembling method for semiconductor device | |
| JPH06252182A (en) | Die bonding method | |
| JPH07221585A (en) | Manufacture of electronic component | |
| JPS5992539A (en) | Wire bonding process | |
| JPH01278032A (en) | Wire bonding process | |
| JP2731424B2 (en) | Method for manufacturing semiconductor device | |
| JPH08330308A (en) | Formation of bump |